CN108183621A - A kind of single-phase quasi- Z-source inverter and its power density based on SiC improve method - Google Patents
A kind of single-phase quasi- Z-source inverter and its power density based on SiC improve method Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 76
- 229910010271 silicon carbide Inorganic materials 0.000 description 75
- 238000010586 diagram Methods 0.000 description 16
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from DC input or output
- H02M1/15—Arrangements for reducing ripples from DC input or output using active elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a kind of single-phase quasi- Z-source inverters based on SiC and its power density to improve method, and the single-phase quasi- Z-source inverter includes：DC power supply, quasi- Z source networks, full SiC power modules, load branch and active power filtering branch.Two harmonic pulsating powers in output AC power are transmitted in the storage capacitor of effective filter branch by the present invention by effectively controlling the switching tube of active power filtering branch.Therefore, the quasi- Z source networks capacitance of DC side and inductance only need the pulsating volage electric current that processing HF switch frequency generates, and the capacitance of active power filtering branch is with ac operation, allow larger pulsation, so that its value greatly reduces compared with DC side electrolytic capacitor, and thin-film capacitor can be used and increase service life.
Description
Technical field
The present invention relates to electric electronic current change technology fields, and in particular to a kind of single-phase quasi- Z-source inverter based on SiC and
Its power density improves method.
Background technology
Single-phase quasi- Z-source inverter attracts more and more researchs applied in photovoltaic generating system in recent years, due to its with
Single stage type converts the limitation for overcoming conventional inverter step-up ratio, wider photovoltaic voltage processing capacity, and pass-through state is not required to
Dead zone function is wanted to greatly simplify debugging, reduce outlet side interference, improve inverter system stability.In addition to being independent photovoltaic
Other than inverter, single-phase quasi- Z-source inverter is alternatively arranged as basic module, forms quasi- Z source levels and joins more level photovoltaic inverters.
Domestic and foreign scholars are successively to the operation principle of single-phase, three-phase, the quasi- Z-source inverter of cascade, control strategy, grid-connected
Application etc. studied.Wherein, single-phase quasi- Z-source inverter causes to exchange defeated due to output single-phase alternating voltage and electric current
Go out in power and be transmitted to DC side containing two harmonic pulsating powers, this two harmonics pulsating power, it would be desirable to quasi- Z sources
Network capacitance and inductance are transmitted to DC power supply to limit this pulsating power, reduce the influence to DC power supply performance.
To reduce influence of the two harmonic pulsating power of exchange side to DC power supply as far as possible, need DC voltage
Two harmonics pulsation with electric current is limited in admissible range.For example, it is desired to by two harmonics on inductive current
Pulsation ripple is limited in 20% current dc component average value, by the two harmonics pulsation ripple limit on DC bus-bar voltage
Make the DC bus current peak value 5%.As a result, needing larger quasi- Z source networks capacitance and inductance, there is research to pass through control
The two harmonic pulsating powers that system strategy is decayed on quasi- Z source inductances electric current, but still larger quasi- Z source networks capacitance is needed,
The pulsation of two harmonic of DC side to be limited in the range of engineering license.
In the case where the technology of current 1200V broad stopbands silicon carbide (SiC) device is increasingly mature, carried using SiC device
The switching frequency of high-power switchgear pipe reduces loss, improves the trend that temperature stability is electronic power conversion field.There is scholar
The quasi- Z-source inverter of three-phase based on SiC is had studied, analyzed including parameter designing, power attenuation etc..If however, by SiC device
Single-phase quasi- Z-source inverter is directly applied to, due to two harmonic pulsation problems of above-mentioned DC side, even if switching frequency carries
Height, passive device size, system bulk and the quasi- Z source networks weight of single-phase quasi- Z-source inverter will not also have too big improvement.Such as
Fruit, without significantly improving system power-density, will lose the advantage of SiC device using SiC device.
Invention content
The purpose of the present invention is to provide a kind of single-phase quasi- Z-source inverters based on SiC and its power density to improve method,
It is made to solve current single-phase quasi- Z-source inverter in order to reduce influence of the two harmonic pulsating power of exchange side to DC power supply
Into passive device parameter, volume and weight etc. it is excessive, the problem of inverter power density is not high.
To achieve the above object, technical scheme of the present invention provides a kind of single-phase quasi- Z-source inverter based on SiC, institute
Single-phase quasi- Z-source inverter is stated to include：DC power supply, quasi- Z source networks, full SiC power modules, load branch and active power filtering branch
Road, the quasi- Z source networks are by two inductance L1And L2, two capacitance C1And C2An and diode D1Connection is formed and is embedded into straight
Between galvanic electricity source and inverter dc bus, the full SiC power modules are by four inverter bearing power switching tube S1~S4With
And two active power filtering branch switch pipe S5And S6Connection is formed, inverter bearing power switching tube S1And S2, inverter load work(
Rate switching tube S3And S4And active power filtering branch switch pipe S5And S6Series connection forms the first and second inverter bearing powers respectively
Switching tube group parallel branch and active power filtering branch switch pipe group parallel branch, the first and second inverter bearing powers switch
Pipe group parallel branch and active power filtering branch switch pipe group parallel branch are connected in dc bus, the load branch in parallel
Load inductance L is connected in series with through the first inverter bearing power switching tube group parallel branchfWith load resistance RLAfter be connected to second
Inverter bearing power switching tube group parallel branch, the active power filtering branch is through active power filtering branch switch pipe group parallel branch
It is connected in series with filter inductance L3With compensating electric capacity C3After be connected to dc bus.
Further, the DC power anode is sequentially connected in series inductance L1, diode D1With inductance L2After be connected to and direct current
The dc bus that positive pole is connected, capacitance C1One end be connected to diode D1With inductance L2Between connecting line on, capacitance C1
The other end be connected on the dc bus being connect with DC power cathode, capacitance C2With diode D1With inductance L2It is connected in parallel
To the dc bus being connected with DC power anode.
Further, described load branch one end is connected to inverter bearing power switching tube S1And S2Between it is first inverse
Become on device bearing power switching tube group parallel branch connecting line, the load branch other end is connected to inverter bearing power and opens
Close pipe S3And S4Between the second inverter bearing power switching tube group parallel branch connecting line on.
Further, the active power filtering branch is being connected in series with filter inductance L3With compensating electric capacity C3It has been connected to before
Source filter branch switching tube S5And S6Between active power filtering branch switch pipe group parallel branch connecting line on.
Further, the inverter bearing power switching tube S1~S4There are straight-through and non-straight-through two kinds of working conditions：It is straight-through
During state, the inverter bearing power switching tube S1And S2Or the inverter bearing power switching tube S3And S4It simultaneously turns on
Not to load output power, quasi- Z source networks diode D1It disconnects, DC power supply and quasi- Z source networks capacitance C1And C2Give quasi- Z sources net
Network inductance L1And L2Charging；During non-pass-through state, the inverter bearing power switching tube S1And S2Or the inverter load work(
Rate switching tube S3And S4Complementation conducting is to load output power, quasi- Z source networks diode D1Conducting, DC power supply and quasi- Z source networks
Inductance L1And L2To quasi- Z source networks capacitance C1And C2Charging, while powering load.
Further, the active power filtering branch switch pipe S5And S6Complete complementary is connected, by twice in bearing power
Frequency component pulsating power is transferred to the compensating electric capacity C of the active power filtering branch3In, the filter inductance of the active power filtering branch
L3It is mainly used for inhibiting the high frequency ripple of active power filtering branch current.
A kind of power density the invention also discloses single-phase quasi- Z-source inverter based on SiC improves method, the method
Including：According to the power and voltage class of single-phase quasi- Z-source inverter, choose corresponding SiC device for power switching and connect composition
Full SiC power modules；Switch-off power is lost and opens by the conducting power for the device for power switching for analyzing full SiC power modules
Loss, and then the total conducting power of full SiC power modules power device for obtaining single-phase quasi- Z-source inverter is lost and always opens shutdown
Power attenuation；It analyzes the total conducting power loss of full SiC power modules device for power switching and always opens switch-off power loss not
With the value under the switching frequency of full SiC power modules device for power switching；During with active filter branch, DC side inductance, capacitance
Pulsation caused by limiting the device for power switching switching frequency of full SiC power modules is only needed, it is certain in inverter power and voltage
When, DC side passive device parameter is inversely proportional completely with switching frequency, and the higher inductance of switching frequency, capacitance parameter are smaller；Full
In the case of Football Association's efficiency requirements, improve the device for power switching switching frequency of full SiC power modules and reduce passive device ginseng
Number improves the power density of single-phase quasi- Z-source inverter；The power switch device of selected full SiC power modules is required according to gross efficiency
The switching frequency of part；And the switching frequency according to selected full SiC power modules device for power switching and single-phase quasi- Z sources inversion
The passive element parameter calculating formula group design of device meets the quasi- Z source networks inductive current of DC side and DC bus-bar voltage ripple will
The passive element parameter asked；Wherein, the passive element parameter calculating formula group of the single-phase quasi- Z-source inverter is as follows：
Wherein, VDCFor direct current power source voltage, D is inverter bearing power switching tube S1~S4The duty ratio of pass-through state, ri
For inductive current ripple factor, ILSubject to Z source network inductive current average values, fs' switched frequently for inverter bearing power switching tube
Rate, rvFor the ripple factor of DC bus-bar voltage peak value, VPNFor DC bus-bar voltage.
Further, the conducting power of the device for power switching of the full SiC power modules is lost and opens switch-off power
The analysis method of loss includes：SiC device for power switching electric parameter and active power filtering branch based on active power filtering branch
Power switch loss analysis formula group calculates active power filtering branch switch pipe S5And S6MOSFET and anti-paralleled diode always lead
Logical power attenuation and active power filtering branch switch pipe S5And S6MOSFET and anti-paralleled diode always open switch-off power damage
Consumption；Wherein, active power filtering branch power switching loss analysis mode group is as follows：
Wherein, dact(t) and dzero(t) be respectively active power filtering branch effective status and nought state duty ratio, vm3(t)
=2uC(t)/VPN- 1, uC(t) it is active power filtering branch compensating electric capacity C3Voltage, VPNFor DC bus-bar voltage；
PCON_MOSFor active power filtering branch switch pipe S5With S6MOSFET total conducting power loss, PON_DiodeFor S5With
S6Anti-paralleled diode total conducting power loss, RDSThe conducting internal resistance of MOSFET for active power filtering branch switch pipe, VF
The forward voltage drop of anti-paralleled diode for active power filtering branch switch pipe, RFInverse parallel two for active power filtering branch switch pipe
The conducting internal resistance of pole pipe, iCFor active power filtering branch filter inductance L3Average current；D ω t are to fundamental wave angular frequency and time
The integration of the product of t；
PSW_MOSFor active power filtering branch switch pipe S5With S6MOSFET always open switch-off power loss, PREC_DiodeFor
S5With S6Anti-paralleled diode always open switch-off power loss, fsFor active power filtering branch switch pipe switching frequency, EONWith
EOFFRespectively active power filtering branch switch pipe is in reference voltage VrWith reference current IrWhen every pulsing one and shutdown energy；
SiC device for power switching electric parameter and load branch power switch loss analysis formula group based on load branch
Calculate inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode total conducting power loss and inversion
Device bearing power switching tube S1~S4MOSFET and anti-paralleled diode always open switch-off power loss；Wherein, inverter is born
It is as follows to carry power switch loss analysis formula group：
Wherein, PCON_S14For inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode total conducting
Power attenuation, PSW_S14For inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode always open shutdown work(
Rate is lost, Z-source inverter bearing power switching tube S subject to M1~S4Modulation index, R'DSFor inverter bearing power switching tube
MOSFET conducting internal resistance, ioIt is exported for single-phase quasi- Z-source inverter to the voltage and current of load, ω is fundamental wave angular frequency, D
For inverter bearing power switching tube S1~S4The duty ratio of pass-through state, d ω t are the product to fundamental wave angular frequency and time t
Integration, V'FThe forward voltage drop of anti-paralleled diode for inverter bearing power switching tube, R'FIt is opened for inverter bearing power
Close the conducting internal resistance of the anti-paralleled diode of pipe, ILSubject to Z source network inductive current average values, IoFor the amplitude of fundamental current,
fs' for inverter bearing power switching tube switching frequency, VPNFor DC bus-bar voltage, E'ONAnd E'OFFRespectively inverter loads
Power switch pipe is in reference voltage V'rWith reference current I'rWhen every pulsing one and shutdown energy.
Further, the active power filtering branch switch pipe S5And S6It is totally independent of inverter bearing power switching tube S1
~S4, compensating electric capacity C3Voltage is expressed as：
Due to uC 2(t) >=0, A=P is enabledm/ωC3≥VoIo/2ωC3, then the active power filtering branch compensating electric capacity C3Electricity
Pressure and filter inductance L3Average current be expressed as：
The active power filtering branch compensating electric capacity C3Voltage maximum value and DC bus-bar voltage VPNPeak value is consistent, then needs
Compensate PrActive power filtering branch compensating electric capacity C3At least：
The active power filtering branch filter inductance L3With compensating electric capacity C3Series connection, to inhibit active power filtering branch current iCIn
The high frequency ripple that switching frequency generates is no more than 20%；
Wherein, A is and two harmonic pulsating power PrWith compensating electric capacity C3It is worth relevant constant, VoAnd IoRespectively base
The amplitude of wave voltage and electric current, ω are fundamental wave angular frequency,For power-factor angle, t is the time, PmFor rated power, PoIt is single-phase
Quasi- Z-source inverter is exported to the output power of load.
Further, it is exported in the single-phase quasi- Z-source inverter to the voltage u of loado=VoSin (ω t) and electric currentIn the case of, the single-phase quasi- Z-source inverter, which is exported to the output power of load, is：
The single-phase quasi- Z-source inverter, which is exported into the output power of load, contains two harmonic pulsating power Pr, institute
State two harmonic pulsating power PrFor：
Wherein, VoAnd IoThe respectively amplitude of fundamental voltage and electric current, ω are fundamental wave angular frequency,For power-factor angle, t
For the time.
The invention has the advantages that：
The invention discloses the single-phase quasi- Z-source inverter with active filter branch, by effectively controlling active power filtering branch
Two harmonic pulsating powers in output AC power are transmitted to the storage capacitor of effective filter branch by the switching tube on road
In.Therefore, the quasi- Z source networks capacitance of DC side and inductance only need the pulsating volage electric current that processing HF switch frequency generates, and have
The capacitance of source filter branch allows larger pulsation, so that its value is big compared with DC side electrolytic capacitor with ac operation
It is big to reduce, and thin-film capacitor can be used and increase service life.The device for power switching of full SiC power modules leads in the present invention
Lead to power attenuation and open switch-off power loss calculation, help to analyze the damage of complete all device for power switching of SiC power modules
Consumption, so as to choose switching frequency；Based on broad stopband SiC device, switching frequency is improved, active power filtering branch compensates two harmonics
Pulsating power greatly reduces the quasi- Z source networks component parameters of DC side；Compared with the quasi- Z-source inverter of traditional single phase, entire inverter
The passive element parameter of system reduces, and volume, weight etc. greatly reduce, and power density improves.
Description of the drawings
Fig. 1 is the attachment structure schematic diagram of the quasi- Z-source inverter of traditional single phase.
Fig. 2 is a kind of attachment structure schematic diagram of single-phase quasi- Z-source inverter based on SiC disclosed by the invention.
Fig. 3 is a kind of full SiC work(of the active power filtering branch of single-phase quasi- Z-source inverter based on SiC disclosed by the invention
The conducting power of the device for power switching of rate module is lost and opens switch-off power loss analysis schematic diagram, (a) active power filtering branch
Way switch pipe S5And S6Turn on and off control strategy schematic diagram；(b) active power filtering branch switch pipe S5Voltage and current wave
Shape schematic diagram.
Fig. 4 is a kind of full SiC power modules power switch of single-phase quasi- Z-source inverter based on SiC disclosed by the invention
The total conducting power loss of device is lost with switch-off power is always opened to the switching frequency of full SiC power modules device for power switching
Relation schematic diagram.
Fig. 5 is a kind of simulation result of single-phase quasi- Z-source inverter based on SiC disclosed by the invention；From top to bottom successively
For：(a) DC input voitage simulation result schematic diagram, (b) quasi- Z source networks capacitance C1Voltage simulation result schematic diagram and (c)
DC bus-bar voltage simulation result schematic diagram.
Fig. 6 is the input current and DC bus-bar voltage of a kind of single-phase quasi- Z-source inverter based on SiC disclosed by the invention
In the simulation result schematic diagram of 7 controlling cycles.
Fig. 7 is a kind of simulation result of single-phase quasi- Z-source inverter based on SiC disclosed by the invention；From top to bottom successively
For：(a) active power filtering branch compensating electric capacity current simulations result schematic diagram, the emulation of (b) active power filtering branch compensating electric capacity voltage
Result schematic diagram and (c) ac output current simulation result schematic diagram.
Specific embodiment
The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention..
Embodiment 1
Fig. 1 is the attachment structure schematic diagram of the quasi- Z-source inverter of traditional single phase, and Fig. 2 is disclosed by the invention a kind of based on SiC
Single-phase quasi- Z-source inverter attachment structure schematic diagram.As shown in Fig. 2, the single-phase quasi- Z-source inverter packet disclosed in the present embodiment
It includes：DC power supply, quasi- Z source networks, full SiC power modules, load branch and active power filtering branch, the quasi- Z source networks are by two
A inductance L1And L2, two capacitance C1And C2An and diode D1Connection formation is simultaneously embedded into DC power supply and inverter direct current mother
Between line, the full SiC power modules are by four inverter bearing power switching tube S1~S4And two active power filtering branches are opened
Close pipe S5And S6Connection is formed, inverter bearing power switching tube S1And S2, inverter bearing power switching tube S3And S4And have
Source filter branch switching tube S5And S6Respectively series connection formed the first and second inverter bearing power switching tube group parallel branches and
Active power filtering branch switch pipe group parallel branch, the first and second inverter bearing power switching tube group parallel branches and active
Filter branch switching tube group parallel branch is connected in dc bus in parallel, and the load branch is through the first inverter bearing power
Switching tube group parallel branch is connected in series with load inductance LfWith load resistance RLAfter be connected to the second inverter bearing power switching tube
Group parallel branch, the active power filtering branch are connected in series with filter inductance L through active power filtering branch switch pipe group parallel branch3With
Compensating electric capacity C3After be connected to dc bus.In Fig. 1 and Fig. 2, VDCFor direct current power source voltage, iL1And iL2Respectively inductance L1And L2
Electric current, vC1And vC2Respectively capacitance C1And C2Voltage, VPNFor DC bus-bar voltage, uoAnd ioRespectively single-phase quasi- Z sources inversion
Device is exported to the voltage and current of load, uCAnd iCCompensating electric capacity voltage and current for active power filtering branch.
Further, DC power anode is sequentially connected in series inductance L1, diode D1With inductance L2After be connected to and DC power supply
The dc bus that anode is connected, capacitance C1One end be connected to diode D1With inductance L2Between connecting line on, capacitance C1It is another
One end is connected on the dc bus being connect with DC power cathode, capacitance C2With diode D1With inductance L2Be connected in parallel to
The dc bus that DC power anode is connected.Load branch one end is connected to inverter bearing power switching tube S1And S2Between
On first inverter bearing power switching tube group parallel branch connecting line, the load branch other end is connected to inverter bearing power
Switching tube S3And S4Between the second inverter bearing power switching tube group parallel branch connecting line on.Active power filtering branch is being gone here and there
Connection connection filter inductance L3With compensating electric capacity C3It is connected to active power filtering branch switch pipe S before5And S6Between active power filtering branch
On way switch pipe group parallel branch connecting line.
In the present embodiment, inverter bearing power switching tube S1~S4There are straight-through and non-straight-through two kinds of working conditions：Through state
During state, the inverter bearing power switching tube S1And S2Or the inverter bearing power switching tube S3And S4It simultaneously turns on not
To load output power, quasi- Z source networks diode D1It disconnects, DC power supply and quasi- Z source networks capacitance C1And C2To quasi- Z source networks
Inductance L1And L2Charging；During non-pass-through state, the inverter bearing power switching tube S1And S2Or the inverter bearing power
Switching tube S3And S4Complementation conducting is to load output power, quasi- Z source networks diode D1Conducting, DC power supply and quasi- Z source networks electricity
Feel L1And L2To quasi- Z source networks capacitance C1And C2Charging, while powering load.Active power filtering branch switch pipe S5And S6Completely mutually
Conducting is mended, two harmonic pulsating powers in bearing power are transferred to the compensating electric capacity C of the active power filtering branch3
In, the filter inductance L of the active power filtering branch3It is mainly used for inhibiting the high frequency ripple of active power filtering branch current.
Explanation about active device and passive device：Be exactly simply need can (electricity) source device active device,
Device without energy (electricity) source is exactly passive device.Active device is generally used to signal amplification, transformation etc.；Passive device be used for into
Row signal transmission is carried out " signal amplification " by directionality.Capacitance, resistance, inductance are all passive device, IC, module etc.
All it is active device.Popular say is exactly that need power supply that could show its characteristic is exactly active component, such as triode.And do not have to
Power supply with regard to can show its characteristic just be passive element.
A kind of power density of single-phase quasi- Z-source inverter based on SiC disclosed in the present embodiment improves method and includes：Root
According to the power and voltage class of single-phase quasi- Z-source inverter, choose corresponding SiC device for power switching and connect the full SiC work(of composition
Rate module；Switch-off power is lost and opens by the conducting power for the device for power switching for analyzing full SiC power modules to be lost, into
And the total conducting power loss of full SiC power modules power device for obtaining single-phase quasi- Z-source inverter is damaged with switch-off power is always opened
Consumption；It analyzes the total conducting power loss of full SiC power modules device for power switching and always opens switch-off power loss in Bu Tong full SiC
Value under the switching frequency of power module device for power switching；During with active filter branch, DC side inductance, capacitance only need to limit
It pulses caused by the device for power switching switching frequency of full SiC power modules, in one timing of inverter power and voltage, DC side
Passive device parameter is inversely proportional completely with switching frequency, and the higher inductance of switching frequency, capacitance parameter are smaller；It will meeting gross efficiency
It in the case of asking, improves the device for power switching switching frequency of full SiC power modules and reduces passive device parameter, improve single-phase
The power density of quasi- Z-source inverter；The switch frequency of the device for power switching of selected full SiC power modules is required according to gross efficiency
Rate；And according to the switching frequency of selected full SiC power modules device for power switching and the passive member of single-phase quasi- Z-source inverter
Part parameter calculating formula group designs the passive member for meeting the quasi- Z source networks inductive current of DC side and DC bus-bar voltage ripple requirement
Part parameter.
The operation principle of the single-phase quasi- Z-source inverter with active filter branch and parameter choosing are analyzed in the present embodiment first
It takes, analyze the conducting power loss of the device for power switching of full SiC power modules when using SiC device based on this analysis and opens
Clearance is broken power attenuation, and then in the case where meeting system effectiveness demand, designs the switching frequency of optimal power switching device
With passive element parameter.
As shown in Fig. 2, a kind of operation principle of single-phase quasi- Z-source inverter based on SiC disclosed in the present embodiment is as follows：
The work of its bearing power phase is consistent with the quasi- Z-source inverter of traditional single phase, is exported in single-phase quasi- Z-source inverter to the voltage of load
uo=VoSin (ω t) and electric currentIn the case of, single-phase quasi- Z-source inverter is exported to the output work of load
Rate is：
Single-phase quasi- Z-source inverter, which is exported into the output power of load, contains two harmonic pulsating power Pr, two frequencys multiplication
Component pulsating power PrFor：
Wherein, VoAnd IoThe respectively amplitude of fundamental voltage and electric current, ω are fundamental wave angular frequency,For power-factor angle, t
For the time.
Active power filtering branch switch pipe S5And S6It is totally independent of inverter bearing power switching tube S1~S4, compensating electric capacity C3
Voltage is expressed as：
Due to uC 2(t) >=0, A=P is enabledm/ωC3≥VoIo/2ωC3, then active power filtering branch compensating electric capacity C3Voltage and
Filter inductance L3Average current be expressed as：
The parameter of the single-phase quasi- Z-source inverter with active filter branch is chosen as follows in the present embodiment：
Active power filtering branch compensating electric capacity C3Voltage maximum value and DC bus-bar voltage VPNPeak value is consistent, by active filter
Wave branch compensating electric capacity C3Voltage and filter inductance L3Average current calculating formula, P need to be compensatedrActive power filtering branch compensation
Capacitance C3At least：
Wherein, A is and two harmonic pulsating power PrWith compensating electric capacity C3It is worth relevant constant, VoAnd IoRespectively base
The amplitude of wave voltage and electric current, ω are fundamental wave angular frequency,For power-factor angle, t is the time, PmFor rated power, PoIt is single-phase
Quasi- Z-source inverter is exported to the output power of load.
Active power filtering branch filter inductance L3With compensating electric capacity C3Series connection, to inhibit active power filtering branch current iCMiddle switch
The high frequency ripple that frequency generates is no more than 20%.
Due to the compensating electric capacity C of active power filtering branch3Compensate two harmonic pulsating powers, the quasi- Z source networks electricity of DC side
Sense and capacitance only inhibit HF switch to pulse, and the switching harmonics on inductive current are restricted to riAverage current value, by direct current
Switching harmonics in busbar voltage are restricted to rvVoltage peak, then single-phase quasi- Z-source inverter passive element parameter calculating formula
Group is as follows：
Wherein, VDCFor direct current power source voltage, D is inverter bearing power switching tube S1~S4The duty ratio of pass-through state, ri
For inductive current ripple factor, ILSubject to Z source network inductive current average values, fs' switched frequently for inverter bearing power switching tube
Rate, rvFor the ripple factor of DC bus-bar voltage peak value, VPNFor DC bus-bar voltage.
The conducting power loss of the device for power switching of full SiC power modules and to open switch-off power loss analysis as follows：
First, the SiC device for power switching electric parameter based on active power filtering branch and active power filtering branch power are opened
It closes loss analysis formula group and calculates active power filtering branch switch pipe S5And S6MOSFET and anti-paralleled diode total conducting power
Loss and active power filtering branch switch pipe S5And S6MOSFET and anti-paralleled diode always open switch-off power loss.
Fig. 3 (a) is the active power filtering branch switch pipe S disclosed in the present embodiment5And S6The control strategy that turns on and off show
It is intended to.By active power filtering branch compensating electric capacity C3Voltage calculating formula in compensating electric capacity voltage can obtain compensating electric capacity voltage reference value
u* C, with actual capacitance voltage uCIt is compared, the two difference passes through proportional, integral-resonance (PIR) adjuster, and preceding
Feedback control u* C/0.5VPN- 1, modulated signal v is obtained jointlym3, by vm3It is compared with triangular carrier, vm3During more than triangular carrier
S5Open simultaneously S6It turns off, otherwise S5Turn off simultaneously S6It is open-minded.
Based on the active power filtering branch switch pipe S shown in Fig. 3 (a)5And S6Turn on and off control strategy, Fig. 3 (b) institutes
It is shown as active filter branch switching tube S5Voltage and current waveform diagram, switch S6It is similar therewith.As it can be seen that active power filtering branch
Way switch pipe S5And S6There are effective status and nought state.In effective status, in branch current iCDuring positive, active power filtering branch
Way switch pipe S5In MOSFET flow through electric current；In active power filtering branch current iCDuring negative, active power filtering branch switch pipe S5
Diode continuousing flow.In nought state, active power filtering branch switch pipe S5In there is no electric current to flow through, voltage is clamped at direct current
Busbar voltage peak value VPN, then when quasi- Z sources bearing power branch has pass-through state generation, active power filtering branch switch pipe S5Electricity
It is zero that pressure, which will also be fallen, such as inverter bearing power switching tube S in Fig. 3 (b)1Switching signal leads directly to the active power filtering branch of period
Switching tube S5Voltage is as shown in Fig. 3 (b).
It can be obtained by Fig. 3, the duty ratio of active power filtering branch effective status and nought state is respectively：
Wherein, dact(t) and dzero(t) be respectively active power filtering branch effective status and nought state duty ratio, vm3(t)
=2uC(t)/VPN- 1, uC(t) it is active power filtering branch compensating electric capacity C3Voltage, VPNFor DC bus-bar voltage.
Can then obtain active power filtering branch switch pipe conducting power loss be：
Wherein, PCON_MOSFor active power filtering branch switch pipe S5With S6MOSFET total conducting power loss, PON_DiodeFor
S5With S6Anti-paralleled diode total conducting power loss, RDSIn the conducting of MOSFET for active power filtering branch switch pipe
Resistance, VFThe forward voltage drop of anti-paralleled diode for active power filtering branch switch pipe, RFFor active power filtering branch switch pipe it is anti-simultaneously
The conducting internal resistance of union II pole pipe,For active power filtering branch filter inductance L3Average current；D ω t be to fundamental wave angular frequency with
The integration of the product of time t.
The active power filtering branch switch pipe S from Fig. 35Both end voltage as it can be seen that there is voltage switching twice in each switch periods,
However, as previously mentioned, Voltage Drop during pass-through state due to zero current switching will not no power waste, then can obtain S5With
S6MOSFET and anti-paralleled diode always open switch-off power loss be：
Wherein, PSW_MOSFor active power filtering branch switch pipe S5With S6MOSFET always open switch-off power loss,
PREC_DiodeFor S5With S6Anti-paralleled diode always open switch-off power loss, fsFrequency is switched for active power filtering branch switch pipe
Rate, EONAnd EOFFRespectively active power filtering branch switch pipe is in reference voltage VrWith reference current IrWhen every pulsing one and pass
Disconnected energy.
Then, the SiC device for power switching electric parameter based on load branch and the loss point of load branch power switch
Analysis formula group calculates inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode total conducting power be lost with
And inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode always open switch-off power loss；Wherein, it is inverse
It is as follows to become device bearing power switching loss analysis mode group：
Wherein, PCON_S14For inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode total conducting
Power attenuation, PSW_S14For inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode always open shutdown work(
Rate is lost, Z-source inverter bearing power switching tube S subject to M1~S4Modulation index, R'DSFor inverter bearing power switching tube
MOSFET conducting internal resistance, ioIt is exported for single-phase quasi- Z-source inverter to the voltage and current of load, ω is fundamental wave angular frequency, D
For inverter bearing power switching tube S1~S4The duty ratio of pass-through state, d ω t are the product to fundamental wave angular frequency and time t
Integration, V'FThe forward voltage drop of anti-paralleled diode for inverter bearing power switching tube, R'FIt is opened for inverter bearing power
Close the conducting internal resistance of the anti-paralleled diode of pipe, ILSubject to Z source network inductive current average values, IoFor the amplitude of fundamental current,
fs' for inverter bearing power switching tube switching frequency, VPNFor DC bus-bar voltage, E'ONAnd E'OFFRespectively inverter loads
Power switch pipe is in reference voltage V'rWith reference current I'rWhen every pulsing one and shutdown energy.
In addition, analysis calculates the total conducting power loss of full SiC power modules power device of single-phase quasi- Z-source inverter and total
When opening switch-off power loss, by the above-mentioned active power filtering branch switch pipe S calculated5And S6MOSFET and two pole of inverse parallel
Total conducting power loss of pipe and active power filtering branch switch pipe S5And S6MOSFET and anti-paralleled diode always open pass
Disconnected power attenuation and inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode conducting power loss and
Inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode always open switch-off power loss be separately summed i.e.
It can obtain.
In the present embodiment according to the method described above, systematic parameter choose with a 21kW, DC input voitage 300V~600V,
It is designed for the single-phase quasi- Z-source inverter of the basic amplitude 450V of alternating voltage.Design requirement is：Target efficiency 97% is handed over
Output current total harmonic distortion factor (THD) is flowed no more than 2%, quasi- Z source networks inductive current ripple factor riLess than 20%, direct current
The ripple factor r of busbar voltage peak valuevLess than 1%, on the basis of this some requirement is met, quasi- Z source networks inductance and capacitance ginseng
Number is as small as possible.
Single-phase quasi- Z-source inverter systematic parameter based on 21kW, the present embodiment, which is chosen, has the full SiC of 1200V/193A
The module CAS120M12BM2 of MOSFET and anti-paralleled diode, by formula active power filtering branch power switching loss analysis mode group meter
Calculate active power filtering branch switch pipe S5And S6MOSFET and anti-paralleled diode total conducting power loss and active power filtering branch
Way switch pipe S5And S6MOSFET and anti-paralleled diode always open switch-off power loss, required main active power filtering branch
The SiC device for power switching electric parameter on road can be obtained from the tables of data of CAS120M12BM2 modules.
SiC device for power switching electric parameter and load branch power switch loss analysis formula meter based on load branch
Calculate inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode conducting power loss and inverter bear
Carry power switch tube S1~S4MOSFET and anti-paralleled diode always open switch-off power loss.
Work(is always connected in the full SiC power modules power device that single-phase quasi- Z-source inverter is calculated according to the above results analysis
Rate is lost and always opens switch-off power loss, and analyzes full SiC power modules device for power switching total conducting power loss and always
Value of the switch-off power loss under the switching frequency of different full SiC power module device for power switching is opened, as shown in figure 4,
During 40kHz switching frequencies, the complete total conducting power loss of SiC power modules device for power switching and full SiC power modules power device
Part always opens switch-off power loss quite, and in 80kHz, full SiC power modules power device always opens switch-off power loss about
Twice for the total conducting power loss of full SiC power modules device for power switching.Thus, the present embodiment chooses 70kHz as switch
Pipe frequency, total losses are about 2.5% on full SiC power modules device for power switching at this time, in addition miscellaneous in inductance capacitance in circuit
Loss is dissipated, gross efficiency is smaller than 97%.
A kind of single-phase quasi- Z-source inverter and the quasi- Z-source inverter of traditional single phase based on SiC that Table I is designed for the present embodiment
Passive element parameter comparison table.As it can be seen that a kind of single-phase quasi- Z-source inverter based on SiC that the present embodiment is proposed is more single than tradition
Mutually quasi- Z-source inverter substantially reduces quasi- Z source networks component parameters.A kind of single-phase quasi- Z sources inversion based on SiC to 21kW
Device, the volume and weight of whole system will greatly reduce.Although active power filtering branch increases a bridge arm, a filtered electrical
Sense, a compensating electric capacity, the bridge arm and bearing power bridge arm of active power filtering branch, can on the basis of current ripe SiC device
By 3 bridge arm integration modules, the CAS120M12BM2 modules chosen in being designed such as the present embodiment are realized, and the exchange of a 423 μ F
Compared with the capacitance of two 1500 μ F of DC side in the quasi- Z-source inverter system of traditional single phase, volume and cost will have compensating electric capacity
Very big reduction, and capacitance service life increases.In the case where not influencing efficiency, the power of single-phase quasi- Z-source inverter system is close
Degree will improve a lot.
Table I：A kind of single-phase quasi- Z-source inverter and the quasi- Z-source inverter passive element parameter comparison of traditional single phase based on SiC
Table
The present invention carries out a kind of single-phase quasi- Z-source inverter based on SiC proposed during 70kHz in PLECS softwares
Emulation.According to previous designs method, quasi- Z source networks inductance L in emulation1And L2With capacitance C1And C2Respectively 60 μ H and 45 μ F, it is active
Filter branch compensating electric capacity C3For 450 μ F, filter inductance L3For 40 μ H.Emulation operating mode be input voltage 450V, DC bus-bar voltage
Peak value 563V, so as to obtain alternating voltage amplitude 450V.As seen from Figure 6, single-phase quasi- Z-source inverter is operated in 70kHz switch frequencies
Rate, and the ripple of inductive current is less than the ratio of average value 20%, the ripple on DC bus-bar voltage peak value is almost invisible,
Then selected quasi- Z source networks parameter meets design requirement, and DC side is without two harmonic pulsating powers, as shown in Figure 5.
As seen from Figure 7, two harmonic pulsating powers are transferred in compensating electric capacity by active power filtering branch compensating electric capacity with exchange way,
So that single-phase quasi- Z-source inverter ac output current sine degree improves, rate of total harmonics 1.33%<2%.
Although above having used general explanation and specific embodiment, the present invention is described in detail, at this
On the basis of invention, it can be made some modifications or improvements, this will be apparent to those skilled in the art.Therefore,
These modifications or improvements without departing from theon the basis of the spirit of the present invention belong to the scope of protection of present invention.
Claims (10)
1. a kind of single-phase quasi- Z-source inverter based on SiC, which is characterized in that the single-phase quasi- Z-source inverter includes：Direct current
Source, quasi- Z source networks, full SiC power modules, load branch and active power filtering branch, the quasi- Z source networks are by two inductance L1With
L2, two capacitance C1And C2An and diode D1Connection is formed and is embedded between DC power supply and inverter dc bus, institute
Full SiC power modules are stated by four inverter bearing power switching tube S1~S4And two active power filtering branch switch pipe S5With
S6Connection is formed, inverter bearing power switching tube S1And S2, inverter bearing power switching tube S3And S4And active power filtering branch
Way switch pipe S5And S6Series connection forms the first and second inverter bearing power switching tube group parallel branches and active power filtering respectively
Branch switch pipe group parallel branch, the first and second inverter bearing power switching tube group parallel branches and active power filtering branch
Switching tube group parallel branch is connected in dc bus in parallel, and the load branch is through the first inverter bearing power switching tube group
Parallel branch is connected in series with load inductance LfWith load resistance RLAfter be connected to the second inverter bearing power switching tube group parallel connection branch
Road, the active power filtering branch are connected in series with filter inductance L through active power filtering branch switch pipe group parallel branch3And compensating electric capacity
C3After be connected to dc bus.
A kind of 2. single-phase quasi- Z-source inverter based on SiC according to claim 1, which is characterized in that the DC power supply
Anode is sequentially connected in series inductance L1, diode D1With inductance L2It is connected to the dc bus being connected with DC power anode, capacitance C afterwards1
One end be connected to diode D1With inductance L2Between connecting line on, capacitance C1The other end be connected to and DC power cathode
On the dc bus of connection, capacitance C2With diode D1With inductance L2It is female to be connected in parallel to the direct current being connected with DC power anode
Line.
A kind of 3. single-phase quasi- Z-source inverter based on SiC according to claim 1, which is characterized in that the load branch
One end is connected to inverter bearing power switching tube S1And S2Between the first inverter bearing power switching tube group parallel branch connect
In wiring, the load branch other end is connected to inverter bearing power switching tube S3And S4Between the second inverter load
On power switch pipe group parallel branch connecting line.
A kind of 4. single-phase quasi- Z-source inverter based on SiC according to claim 1, which is characterized in that the active power filtering
Branch is being connected in series with filter inductance L3With compensating electric capacity C3It is connected to active power filtering branch switch pipe S before5And S6Between have
On the filter branch switching tube group parallel branch connecting line of source.
5. a kind of single-phase quasi- Z-source inverter based on SiC according to claim 1, which is characterized in that the inverter is born
Carry power switch tube S1~S4There are straight-through and non-straight-through two kinds of working conditions：During pass-through state, the inverter bearing power switch
Pipe S1And S2Or the inverter bearing power switching tube S3And S4It simultaneously turns on not to load output power, quasi- two pole of Z source networks
Pipe D1It disconnects, DC power supply and quasi- Z source networks capacitance C1And C2To quasi- Z source networks inductance L1And L2Charging；During non-pass-through state, institute
State inverter bearing power switching tube S1And S2Or the inverter bearing power switching tube S3And S4Complementation conducting exports load
Power, quasi- Z source networks diode D1Conducting, DC power supply and quasi- Z source networks inductance L1And L2To quasi- Z source networks capacitance C1And C2It fills
Electricity, while powering load.
A kind of 6. single-phase quasi- Z-source inverter based on SiC according to claim 4, which is characterized in that the active power filtering
Branch switch pipe S5And S6Complete complementary is connected, and two harmonic pulsating powers in bearing power is transferred to described active
The compensating electric capacity C of filter branch3In, the filter inductance L of the active power filtering branch3It is mainly used for inhibiting active power filtering branch electricity
The high frequency ripple of stream.
7. according to a kind of power density raising side of single-phase quasi- Z-source inverter based on SiC any in claim 1-6
Method, which is characterized in that the method includes：
According to the power and voltage class of single-phase quasi- Z-source inverter, choose corresponding SiC device for power switching and connect composition entirely
SiC power modules；
Switch-off power is lost and opens by the conducting power for the device for power switching for analyzing full SiC power modules to be lost, and then
It obtains the total conducting power loss of full SiC power modules power device of single-phase quasi- Z-source inverter and always opens switch-off power loss；
It analyzes the total conducting power loss of full SiC power modules device for power switching and always opens switch-off power loss Bu Tong complete
Value under the switching frequency of SiC power module device for power switching；
During with active filter branch, DC side inductance, capacitance only need to limit the device for power switching switch frequency of full SiC power modules
It pulses caused by rate, in one timing of inverter power and voltage, DC side passive device parameter is inversely proportional completely with switching frequency,
The higher inductance of switching frequency, capacitance parameter are smaller；
In the case where meeting gross efficiency requirement, improve the device for power switching switching frequency of full SiC power modules and reduce nothing
Source device parameters improve the power density of single-phase quasi- Z-source inverter；
The switching frequency of the device for power switching of selected full SiC power modules is required according to gross efficiency；And
According to the passive member of the switching frequency of selected full SiC power modules device for power switching and single-phase quasi- Z-source inverter
Part parameter calculating formula group designs the passive member for meeting the quasi- Z source networks inductive current of DC side and DC bus-bar voltage ripple requirement
Part parameter；Wherein, the passive element parameter calculating formula group of the single-phase quasi- Z-source inverter is as follows：
Wherein, VDCFor direct current power source voltage, D is inverter bearing power switching tube S1~S4The duty ratio of pass-through state, riFor electricity
Inducing current ripple factor, ILSubject to Z source network inductive current average values, fs' it is inverter bearing power switching tube switching frequency,
rvFor the ripple factor of DC bus-bar voltage peak value, VPNFor DC bus-bar voltage.
8. method is improved according to a kind of power density of single-phase quasi- Z-source inverter based on SiC described in claim 7,
It is characterized in that, the conducting power loss of the device for power switching of the full SiC power modules and point for opening switch-off power loss
Analysis method includes：
SiC device for power switching electric parameter and the analysis of active power filtering branch power switching loss based on active power filtering branch
Formula group calculates active power filtering branch switch pipe S5And S6MOSFET and anti-paralleled diode total conducting power loss and have
Source filter branch switching tube S5And S6MOSFET and anti-paralleled diode always open switch-off power loss；Wherein, active power filtering
Branch power switching loss analysis mode group is as follows：
Wherein, dact(t) and dzero(t) be respectively active power filtering branch effective status and nought state duty ratio, vm3(t)=2uC
(t)/VPN- 1, uC(t) it is active power filtering branch compensating electric capacity C3Voltage, VPNFor DC bus-bar voltage；
PCON_MOSFor active power filtering branch switch pipe S5With S6MOSFET total conducting power loss, PON_DiodeFor S5With S6It is anti-
Total conducting power loss of parallel diode, RDSThe conducting internal resistance of MOSFET for active power filtering branch switch pipe, VFIt is active
The forward voltage drop of the anti-paralleled diode of filter branch switching tube, RFAnti-paralleled diode for active power filtering branch switch pipe
Internal resistance is connected,For active power filtering branch filter inductance L3Average current；D ω t is multiply fundamental wave angular frequency and time t
Long-pending integration；
PSW_MOSFor active power filtering branch switch pipe S5With S6MOSFET always open switch-off power loss, PREC_DiodeFor S5With S6
Anti-paralleled diode always open switch-off power loss, fsFor active power filtering branch switch pipe switching frequency, EONAnd EOFFRespectively
It is active power filtering branch switch pipe in reference voltage VrWith reference current IrWhen every pulsing one and shutdown energy；
SiC device for power switching electric parameter and load branch power switch loss analysis formula group based on load branch calculate
Go out inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode total conducting power loss and inverter bear
Carry power switch tube S1~S4MOSFET and anti-paralleled diode always open switch-off power loss；Wherein, inverter load work(
Rate switching loss analysis mode group is as follows：
Wherein, PCON_S14For inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode total conducting power
Loss, PSW_S14For inverter bearing power switching tube S1~S4MOSFET and anti-paralleled diode always open switch-off power damage
It consumes, Z-source inverter bearing power switching tube S subject to M1~S4Modulation index, R'DSFor inverter bearing power switching tube
The conducting internal resistance of MOSFET, ioIt is exported for single-phase quasi- Z-source inverter to the voltage and current of load, ω is fundamental wave angular frequency, and D is
Inverter bearing power switching tube S1~S4The duty ratio of pass-through state, d ω t are the product to fundamental wave angular frequency and time t
Integration, V'FThe forward voltage drop of anti-paralleled diode for inverter bearing power switching tube, R'FIt is switched for inverter bearing power
The conducting internal resistance of the anti-paralleled diode of pipe, ILSubject to Z source network inductive current average values, IoFor the amplitude of fundamental current, fs'
For inverter bearing power switching tube switching frequency, VPNFor DC bus-bar voltage, E'ONAnd E'OFFRespectively inverter load work(
Rate switching tube is in reference voltage V'rWith reference current I'rWhen every pulsing one and shutdown energy.
9. a kind of power density of single-phase quasi- Z-source inverter based on SiC according to claim 8 improves method, special
Sign is, the active power filtering branch switch pipe S5And S6It is totally independent of inverter bearing power switching tube S1~S4, compensation electricity
Hold C3Voltage is expressed as：
Due to uC 2(t) >=0, A=P is enabledm/ωC3≥VoIo/2ωC3, then the active power filtering branch compensating electric capacity C3Voltage and
Filter inductance L3Average current be expressed as：
The active power filtering branch compensating electric capacity C3Voltage maximum value and DC bus-bar voltage VPNPeak value is consistent, then needs to compensate
PrActive power filtering branch compensating electric capacity C3At least：
The active power filtering branch filter inductance L3With compensating electric capacity C3Series connection, to inhibit active power filtering branch current iCMiddle switch
The high frequency ripple that frequency generates is no more than 20%；
Wherein, A is and two harmonic pulsating power PrWith compensating electric capacity C3It is worth relevant constant, VoAnd IoRespectively fundamental voltage
With the amplitude of electric current, ω is fundamental wave angular frequency,For power-factor angle, t is the time, PmFor rated power, PoFor single-phase quasi- Z sources
Inverter is exported to the output power of load.
10. a kind of power density of single-phase quasi- Z-source inverter based on SiC according to claim 9 improves method, special
Sign is, is exported in the single-phase quasi- Z-source inverter to the voltage u of loado=VoSin (ω t) and electric currentIn the case of, the single-phase quasi- Z-source inverter, which is exported to the output power of load, is：
The single-phase quasi- Z-source inverter, which is exported into the output power of load, contains two harmonic pulsating power Pr, described twice
Frequency component pulsating power PrFor：
Wherein, VoAnd IoThe respectively amplitude of fundamental voltage and electric current, ω are fundamental wave angular frequency,For power-factor angle, when t is
Between.
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| US11251738B2 (en) | 2019-08-29 | 2022-02-15 | ZF Automotive UK Limited | Drive circuit for an electric motor circuit |
| CN115021541A (en) * | 2022-08-09 | 2022-09-06 | 西南交通大学 | Method for suppressing pulse power of non-isolated UPQC circuit in off-network operation state |
| CN116846240A (en) * | 2023-08-29 | 2023-10-03 | 深圳市德兰明海新能源股份有限公司 | Inverter circuit and energy storage power supply |
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| WO2023207049A1 (en) * | 2022-04-28 | 2023-11-02 | 中国科学院电工研究所 | Low-voltage large-current wireless charging system and cooperative control method thereof |
| CN115021541A (en) * | 2022-08-09 | 2022-09-06 | 西南交通大学 | Method for suppressing pulse power of non-isolated UPQC circuit in off-network operation state |
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| CN116846240B (en) * | 2023-08-29 | 2023-12-22 | 深圳市德兰明海新能源股份有限公司 | Inverter circuit and energy storage power supply |
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