CN108628058B - On-chip integrated mid-infrared super-continuum spectrum light source - Google Patents
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
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- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
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Abstract
The invention discloses an on-chip integrated mid-infrared super-continuum spectrum light source which is characterized by comprising a pump laser generation module for generating seed light, a pump laser amplification module for generating high-peak-power ultrashort pulses, a waveguide coupling module for realizing high-efficiency coupling between heterogeneous material waveguides and an SC spectrum generation module for generating 2-5 mu m mid-infrared SC spectrum laser, wherein the pump laser generation module, the pump laser amplification module, the waveguide coupling module and the SC spectrum generation module are sequentially connected.
Description
Technical Field
The invention relates to the technical field of laser photoelectron, in particular to an on-chip integrated mid-infrared super-continuum spectrum light source.
Background
The light source technology is used as a tool for enlightening and leading the human to move ahead, has important and special positions in various fields of national economy, and is an energy source of various testing and measuring instruments. Therefore, the expanding process of the light source wave band is also the process that the human visual field and the measuring means continuously extend outwards from the traditional visible field. The mid-infrared band (2-5 μm) is located in the visible visual long wave direction of human eyes, not only is an atmospheric window with minimum attenuation, but also covers absorption peaks of a plurality of atoms and molecules, is an important 'fingerprint' identification area in the field of detection instruments, and is also a light wave frequency spectrum area corresponding to the black body radiation of a high-temperature object. Therefore, the laser spread spectrum and instrument detection technology of the middle infrared band has important application in military and civil aspects. Currently, the testing instrument is continuously developing towards the directions of broadband, visualization, intellectualization, automation and integration, and the development of high-quality mid-infrared light sources and instruments becomes a research hotspot of researchers in various countries. Traditional mid-infrared light sources such as synchrotron radiation light sources and heat sticks have poor brightness and extremely low coherence although the generated light has wide bandwidth, and the application of the mid-infrared light sources is severely limited. The laser has the characteristics of high brightness and high coherence. However, due to the limitation of materials, the ordinary laser cannot realize laser output with any wavelength in the middle infrared band. Quantum Cascade Lasers (QCLs) and Optical Parametric Oscillators (OPOs) have the disadvantages of large volume, complex system, high price and small output bandwidth.
The mid-infrared Supercontinuum (SC) spectrum light source not only has the advantages of high brightness and high coherence of the laser light source, but also has the wide spectrum characteristic of a common light source, and becomes the light source with the most development potential of an infrared band. As early as 2013, the market share of mid-infrared SC spectrum light sources in the world has reached $ 5 billion, and with the development of mid-infrared SC spectrum light sources in the defense military field and the application field of biology, medicine, environment, etc., the market rapidly develops at an annual growth rate of 20%, and the market value of mid-infrared SC spectrum light sources is expected to exceed $ 20 billion in 2020. Therefore, the light source of the mid-infrared SC spectrum has very high market value.
The integration of chips is an important trend in the development of the current mid-infrared SC spectrum light source. In recent years, in order to meet the requirements of implementing online monitoring and analysis on special gas, toxic reagents, biological bacteria, medical pathology and the like in the interconnection of everything, particularly aiming at the severe situations of frequent industrial production safety accidents, aggravation of environmental pollution, increase of public safety threats and the like facing the world, domestic and foreign related research institutions increase the application and development of miniature mid-infrared SC spectrum light sources with small volume and low power consumption. Therefore, the on-chip integrated mid-infrared SC spectrum light source has considerable economic and social significance.
Disclosure of Invention
The invention aims to solve the technical problem of providing an on-chip integrated mid-infrared supercontinuum light source which has low cost, good output light beam quality, wide bandwidth, simple and compact structure and is convenient to be compatible with other systems.
The technical scheme adopted by the invention for solving the technical problems is as follows: an on-chip integrated mid-infrared super-continuum spectrum light source comprises a pump laser generation module, a pump laser amplification module, a waveguide coupling module and an SC spectrum generation module, wherein the pump laser generation module is integrated on a chip and is used for generating seed light, the pump laser amplification module is used for generating high-peak-power ultrashort pulses, the waveguide coupling module is used for realizing efficient coupling among heterogeneous material waveguides, and the SC spectrum generation module is used for generating 2-5 mu m mid-infrared SC spectrum laser.
The pump pulse laser generating module is structurally characterized in that the pump pulse laser generating module is a semiconductor saturable absorption mirror, a positive dispersion waveguide, a first wavelength division multiplexer, a first gain waveguide and a waveguide ring mirror, the semiconductor saturable absorption mirror is integrated on a chip and sequentially connected end to end and used for laser mode locking, the positive dispersion waveguide is used for compensating dispersion, the first wavelength division multiplexer is used for injecting pump light, the first gain waveguide is used for providing amplification, and the waveguide ring mirror is used for outputting laser; the first wavelength division multiplexer, the positive dispersion waveguide and the waveguide ring mirror all adopt aluminosilicate as waveguide host materials; the first gain waveguide adopts aluminosilicate as a waveguide matrix material, and rare earth ions are doped in the first gain waveguide in an ion exchange mode; the seed light output by the waveguide ring mirror enters the pumping pulse laser amplification module, and the pumping pulse laser generation module adopts a semiconductor laser as a pumping source. By adjusting the dispersion and length of the first gain fiber, the positive dispersion waveguide, the first wavelength division multiplexer, the waveguide ring mirror and other devices and optimizing the power of the pump light, the characteristic parameters of the mode-locked output pulse, such as pulse width, repetition frequency and the like, can be effectively controlled, so that the mode-locked output pulse is suitable for being used as seed light of a pump pulse laser amplification module.
The pumping pulse laser amplification module structure is a pulse stretcher integrated on a chip and sequentially connected with a pulse stretcher for stretching pulses, a second wavelength division multiplexer for injecting pumping light, a second gain waveguide for providing amplification and a pulse compressor for compressing pulses, and the pulse stretcher, the second wavelength division multiplexer and the pulse compressor all adopt aluminosilicate as waveguide matrix materials; the second gain waveguide adopts aluminosilicate as a waveguide matrix material and is doped with rare earth ions in an ion exchange mode; the waveguide dispersion of the pulse compressor is negative dispersion, and the waveguide dispersion of the pulse stretcher is positive dispersion; the seed light output by the waveguide ring mirror sequentially passes through the pulse stretcher and the second wavelength division multiplexer and then enters the second gain optical fiber, the pumping pulse laser amplification module adopts a semiconductor laser as a pumping source, the pumping light enters the second gain optical fiber through the second wavelength division multiplexer, and the high-peak-power ultrashort pulse output by the second gain optical fiber enters the SC spectrum generation module after passing through the waveguide coupling module. By adjusting the dispersion and length of the pulse stretcher, the second gain waveguide and the pulse compressor and optimizing the pumping power, the generation process of amplified output pulses can be effectively controlled, so that the amplified output pulses output ultrashort pulses with high peak power, and the amplified output pulses are suitable for being used as pumping light of an SC spectrum generation module.
The waveguide coupling module is used for realizing the coupling of the aluminosilicate optical waveguide and the chalcogenide optical waveguide, and is realized by adopting an evanescent wave vertical coupling or direct coupling mode.
The SC spectrum generation module is a high nonlinear waveguide with lower loss and smaller dispersion in a 2-5 mu m wave band; the high-nonlinearity waveguide is prepared by preparing a film by adopting a magnetron sputtering method or a thermal evaporation method and then preparing the high-nonlinearity waveguide by adopting an exposure combined ion etching or stripping method on the basis. By optimizing the components of the chalcogenide film material and the waveguide structure, the zero dispersion point, the dispersion flatness range and the dispersion value of the waveguide can be flexibly controlled, and an ultra-wideband SC spectrum covering an infrared band of 2-5 mu m is generated.
The pump pulse laser generating module adopts 1.5 mu m wavelength, 2 mu m wavelength or 1 mu m wavelength, the rare earth ions adopt erbium, holmium, rubidium, samarium, thulium or ytterbium, and the mode locking mode adopts a high repetition frequency erbium-doped picosecond or femtosecond pulse fiber laser device which realizes mode locking based on a semiconductor saturable absorber, nonlinear polarization rotation, a nonlinear optical fiber loop mirror or a novel saturable absorber.
The pump pulse laser generation module, the pump pulse laser amplification module and the SC spectrum generation module adopt a basement membrane and a waveguide for high-order mode transmission.
The pumping mode of the pump pulse laser generation module and the pump pulse laser amplification module is realized by adopting a forward, backward or bidirectional pumping method, and the pump pulse laser amplification module adopts single-stage amplification, two-stage amplification or multi-stage amplification.
Compared with the prior art, the invention has the advantages that: the invention discloses an on-chip integrated mid-infrared super-continuum spectrum light source which comprises a pump pulse laser generation module, a pump pulse laser amplification module, a waveguide coupling module and an SC spectrum generation module. The advantages are as follows:
(1) each component module of the mid-infrared supercontinuum light source is realized by adopting a waveguide device, and the whole system is integrated on a small-size commercial silicon chip (for example, less than 45 multiplied by 60 mm), so that the mid-infrared SC spectrum light source has the advantages of low cost, good output beam quality, wide bandwidth, simple and compact structure, convenience for being compatible with other systems and the like, and the commercialization of the light source is favorably realized;
(2) the picosecond or femtosecond ultrashort pulse on-chip integrated waveguide laser is used as a seed source, and the on-chip integrated waveguide amplifier is used for amplification, so that the volume and the complexity of the whole system are reduced, and the integration of a middle-far infrared SC spectrum light source is facilitated;
(3) the high-efficiency coupling between the aluminosilicate waveguide and the high-nonlinearity chalcogenide waveguide is realized by adopting a multi-section conical vertical coupling structure, and the conical structure is favorable for realizing adiabatic coupling so as to avoid energy loss caused by generation of a high-order mode;
(4) the SC spectrum generation module is used for preparing the chalcogenide film by utilizing a magnetron sputtering method or a thermal evaporation method, then the chalcogenide film is prepared by adopting a plurality of processes of exposure and ion etching or stripping on the basis, and by optimizing the material components of the chalcogenide film and the waveguide structure, the waveguide zero dispersion point, the dispersion flat range and the dispersion value can be flexibly controlled, and the ultra-wideband SC spectrum covering the infrared band of 2-5 mu m is generated.
Drawings
FIG. 1 is a schematic diagram of an on-chip integrated mid-infrared supercontinuum light source structure according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying examples.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
A full-fiber high-power middle and far infrared supercontinuum light source is shown in figure 1 and comprises a pump pulse laser generation module 1, a pump pulse laser amplification module 2, a waveguide coupling module 3 and an SC spectrum generation module 4, wherein the pump pulse laser generation module 1 is integrated on a chip and is used for generating seed light, the pump pulse laser amplification module 2 is used for generating high-peak power ultrashort pulses, the waveguide coupling module 3 is used for realizing high-efficiency coupling between heterogeneous material waveguides, and the SC spectrum generation module 4 is used for generating 2-5 mu m middle and far infrared SC spectrum laser.
The pump pulse laser generating module 1 adopts a 1.5 μm linear cavity erbium-doped optical waveguide laser based on semiconductor saturable absorber mirror (SESAM) mode locking, as shown in fig. 1, and has the structure: the laser mode locking device comprises a semiconductor saturable absorption mirror 1-1 for laser mode locking, a positive dispersion waveguide 1-2 for compensating dispersion, a first wavelength division multiplexer 1-3 for injecting pump light, a first gain waveguide 1-4 for providing amplification and a waveguide ring mirror 1-5 for outputting laser which are sequentially connected end to end; the seed light output by the waveguide ring mirrors 1-5 enters the pumping pulse laser amplification module 2. The positive dispersion waveguide 1-2, the first wavelength division multiplexer 1-3 and the waveguide ring mirror 1-5 all adopt aluminosilicate as waveguide matrix materials; the first wavelength division multiplexer 1-3, the first gain waveguide 1-4 and the waveguide ring mirror 1-5 all adopt waveguides transmitted by a basement membrane so as to ensure that output pulses have good beam quality. The first gain waveguide 1-4 adopts aluminosilicate as waveguide matrix material, and erbium ions are doped in the waveguide matrix material in an ion exchange mode; the positive dispersion waveguide 1-2 ensures that the waveguide dispersion is positive dispersion by changing the structure of the aluminosilicate waveguide or doping other materials in the aluminosilicate waveguide, so that the laser working dispersion management mechanism is realized. The pump pulse laser generation module 1 adopts a 980nm semiconductor laser as a pump source. The cavity length of the whole on-chip optical waveguide laser is controlled to enable the repetition frequency of mode-locked output pulses to be in the order of MHz or above, and the characteristic parameters of seed light output by the waveguide ring mirrors 1-5 can meet the requirements of the pump pulse laser amplification module 2.
The pumping pulse laser amplification module 2 adopts single-stage amplification, actually is a simplified chirped pulse amplifier, and the pumping mode adopts forward pumping. The structure is as follows: a pulse stretcher 2-1 for stretching the pulse, a second wavelength division multiplexer 2-2 for injecting the pump light, a second gain waveguide 2-3 for providing amplification, and a pulse compressor 2-4 for compressing the pulse, which are connected in sequence. The seed light output by the waveguide ring mirror 1-5 directly enters the second gain waveguide 2-3 after passing through the pulse stretcher 2-1 and the second wavelength division multiplexer 2-2. The pulse stretcher 2-1, the second wavelength division multiplexer 2-2 and the pulse compressor 2-4 all adopt aluminosilicate as waveguide matrix materials; the second wavelength division multiplexer 2-2 and the pulse compressor 2-4 both adopt waveguides transmitted by a basement membrane, and the waveguide size can ensure that output pulses have good beam quality and simultaneously ensure that the waveguide dispersion of the pulse compressor 2-4 is negative dispersion. The second gain waveguide 2-3 adopts aluminosilicate as a waveguide matrix material, and erbium ions are doped in the waveguide matrix material in an ion exchange mode; the pulse stretcher 2-1 ensures that the waveguide dispersion is positive dispersion, so that the seed light output by the waveguide ring mirror 1-5 is stretched, and the pulse splitting in the subsequent amplification process is avoided. The pump pulse laser amplification module 2 adopts a 980nm semiconductor laser with larger output power as a pump source, and pump light enters the second gain optical fiber 2-3 through the second wavelength division multiplexer 2-2. After the amplified laser enters the pulse compressor 2-4, the amplified laser outputs a high peak power ultrashort pulse as pump light, and the pump light enters the SC spectrum generation module 4 through the waveguide coupling module 3.
The waveguide coupling module 3 is used for realizing the coupling of aluminosilicate optical waveguides and chalcogenide optical waveguides, and can be realized by adopting an evanescent wave vertical coupling mode 3-1.
The above-mentioned SC spectrum generation block 4 is a highly nonlinear waveguide having low loss and small dispersion in the 2-5 μm band. In this embodiment, a chalcogenide optical waveguide 4-1 having a single-layer structure is used. The high nonlinear waveguide is prepared by a magnetron sputtering method or a thermal evaporation method and then by a plurality of processes of exposure and ion etching or stripping on the basis.
The pumping pulse laser generation module 1 can adopt but is not limited to 1.5 μm wavelength, 2 μm wavelength and 1 μm wavelength, the rare earth ions can adopt but is not limited to erbium, holmium, rubidium, samarium, thulium, ytterbium and the like, and the mode locking mode can adopt but is not limited to a high repetition frequency erbium-doped picosecond or femtosecond pulse fiber laser device which realizes mode locking based on semiconductor saturable absorbers, nonlinear polarization rotation, nonlinear fiber loop mirrors, novel saturable absorbers (carbon nanotubes, graphene, sulfides and the like) and the like.
The pump pulse laser generation module 1, the pump pulse laser amplification module 2 and the SC spectrum generation module 4 may adopt, but are not limited to, a basement membrane, a waveguide for higher-order mode transmission.
The pumping modes of the pump pulse laser generation module 1 and the pump pulse laser amplification module 2 can be realized by methods such as, but not limited to, forward, backward or bidirectional pumping.
The pump pulse laser amplification module 2 can adopt but is not limited to single-stage amplification, two-stage amplification and multi-stage amplification.
The waveguide coupling module 3 can be realized by, but not limited to, evanescent wave vertical coupling, direct coupling, and the like.
The high nonlinear waveguide can be, but not limited to, a silicon waveguide, a fluoride optical waveguide, a tellurate optical waveguide, or a chalcogenide optical waveguide, and can be structurally, but not limited to, a single-layer or multilayer waveguide structure.
Compared with the prior art, all the components of the invention are realized by waveguide devices, and the whole system is integrated on a small-sized commercial silicon chip, so that the mid-infrared SC spectrum light source has the advantages of low cost, good output beam quality, wide bandwidth, simple and compact structure, convenience for being compatible with other systems and the like, and is favorable for realizing the commercialization of the light source.
Of course, the above description is not intended to limit the present invention, and the present invention is not limited to the above examples. Variations, modifications, additions and substitutions which may occur to those skilled in the art and which fall within the spirit and scope of the invention are also considered to be within the scope of the invention.
Claims (6)
1. An on-chip integrated mid-infrared supercontinuum light source, characterized in that: the device comprises a pumping laser generation module, a pumping laser amplification module, a waveguide coupling module and a supercontinuum generation module, wherein the pumping laser generation module is integrated on a chip and is used for generating seed light, the pumping laser amplification module is used for generating ultrashort pulses with high peak power, the waveguide coupling module is used for realizing high-efficiency coupling between heterogeneous material waveguides, the supercontinuum generation module is used for generating 2-5 mu m mid-infrared supercontinuum laser, and the pumping pulse laser generation module is structurally characterized by comprising a semiconductor saturable absorption mirror, a positive dispersion waveguide, a first wavelength division multiplexer, a first gain waveguide, a waveguide ring mirror, a second gain waveguide and a waveguide ring mirror, wherein the semiconductor saturable absorption mirror is integrated on the chip and is sequentially connected end to end and used for laser mode locking; the first wavelength division multiplexer, the positive dispersion waveguide and the waveguide ring mirror all adopt aluminosilicate as waveguide host materials; the first gain waveguide adopts aluminosilicate as a waveguide matrix material and is doped with rare earth ions in an ion exchange mode; the seed light output by the waveguide ring mirror enters the pumping pulse laser amplification module, the pumping pulse laser generation module adopts a semiconductor laser as a pumping source, the pumping pulse laser amplification module is structurally characterized in that a pulse stretcher for stretching pulses, a second wavelength division multiplexer for injecting pumping light, a second gain waveguide for providing amplification and a pulse compressor for compressing pulses are integrated on a chip and sequentially connected, and the pulse stretcher, the second wavelength division multiplexer and the pulse compressor all adopt aluminosilicate as waveguide matrix materials; the second gain waveguide adopts aluminosilicate as a waveguide matrix material and is doped with rare earth ions in an ion exchange mode; the waveguide dispersion of the pulse compressor is negative dispersion, and the waveguide dispersion of the pulse stretcher is positive dispersion; the seed light output by the waveguide ring mirror sequentially passes through the pulse stretcher and the second wavelength division multiplexer and then enters the second gain waveguide, the pumping pulse laser amplification module adopts a semiconductor laser as a pumping source, the pumping light enters the second gain waveguide through the second wavelength division multiplexer, and the high-peak-power ultrashort pulse output by the second gain waveguide enters the supercontinuum generation module after passing through the waveguide coupling module.
2. The on-chip integrated mid-infrared supercontinuum light source of claim 1, wherein: the waveguide coupling module is used for realizing the coupling of the aluminosilicate optical waveguide and the chalcogenide optical waveguide, and is realized by adopting an evanescent wave vertical coupling or direct coupling mode.
3. The on-chip integrated mid-infrared supercontinuum light source of claim 1, wherein: the super-continuum spectrum generation module is a high nonlinear waveguide with low loss and small dispersion in a 2-5 mu m wave band, the high nonlinear waveguide is prepared by adopting a magnetron sputtering method or a thermal evaporation method, and then the high nonlinear waveguide is prepared by adopting an exposure and ion etching or stripping method.
4. The on-chip integrated mid-infrared supercontinuum light source of claim 1, wherein: the pump pulse laser generating module adopts 1.5 mu m wavelength, 2 mu m wavelength or 1 mu m wavelength, the rare earth ions adopt erbium, holmium, rubidium, samarium, thulium or ytterbium, and the mode locking mode adopts a high repetition frequency erbium-doped picosecond or femtosecond pulse fiber laser device which realizes mode locking based on a semiconductor saturable absorber, nonlinear polarization rotation, a nonlinear optical fiber loop mirror or a novel saturable absorber.
5. The on-chip integrated mid-infrared supercontinuum light source of claim 1, wherein: the pump pulse laser generation module, the pump pulse laser amplification module and the supercontinuum generation module adopt a basement membrane and a waveguide for high-order mode transmission.
6. The on-chip integrated mid-infrared supercontinuum light source of claim 1, wherein: the pumping mode of the pump pulse laser generation module and the pump pulse laser amplification module is realized by adopting a forward, backward or bidirectional pumping method, and the pump pulse laser amplification module adopts single-stage amplification, two-stage amplification or multi-stage amplification.
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