CN108627969A - A kind of bistable electro wetting structure and its preparation process - Google Patents
A kind of bistable electro wetting structure and its preparation process Download PDFInfo
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- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/004—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid
- G02B26/005—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid based on electrowetting
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Abstract
The invention discloses a kind of bistable electros to soak structure, including underlying substrate layer and the encapsulated layer being located above, array of the substrate layer equipped with pixel graphics block made of light transmission insulating materials, it is characterised in that：Also it is equipped with electrode layer, hydrophobic layer, ink layer and water layer successively between the substrate layer and encapsulated layer, the lower surface of the encapsulated layer is equipped with conductive layer, and hydrophobic layer covers electrode layer comprehensively, and electrode layer continuously covers all pixels graph block.Electricity wetting structure of the invention can be used full photoetching process and prepare, it is easy to large-scale processing, since special structure design reduces electrode at a distance from water layer, not only significantly reduce the operating voltage of bistable electro wetting, be conducive to improve the contrast and reliability of bistable electro wetting display simultaneously, and can realize transmission-type and the wetting display of reflective two kinds of bistable electros.
Description
Technical field
The invention belongs to electrowetting display technology fields, and in particular to a kind of bistable electro wetting structure and its prepare work
Skill.
Background technology
Electrowetting is the phenomenon that can changing solid-liquid contact angle under conditions of extra electric field, can be with using electrowetting effect
It realizes and the position of drop is controlled, to reach the switching effect to reflection or transmitted light, as shown in Figure 1, this open light
Close the basis that control effect is electrowetting display technology.Electrowetting display technology advantage compared with other reflective display technologies
It is fast response time (＜ 10ms), colored display, contrast height may be implemented, light reflectivity is high.
Electrowetting device is also designed to bistable structure, i.e., obtains drop within the pixel by geometry design
Two stable states of (display ink) control its switching between the two states by voltage, and state holding itself does not consume
Energy.Bistable electro wetting display may be implemented using bistable structure, this is further decreasing energy consumption, is extending and show product work
Make extremely important in terms of the time, there are two types of existing technical solutions：
Scheme one first passes through the schemes such as sputtering one layer of ITO of preparation on substrate, and graphical plane is prepared by laser formation
ITO electrode, on its surface, by CVD, either the schemes such as ALD or spin coating prepare dielectric layer, pass through optical graving in dielectric layer surface
Standby thicker SU8 block patterns, prepare stereochemical structure, pass through lifting or spin coating cytop or teflon in entire sample surfaces
Prepare hydrophobic layer.Existing technical solution leads to oil since coordination electrode is excessively high below hydrophobic layer surface distance above SU8 squares
When layer switches from SU8 squares surface to SU8 grooves, required overtension, while remnants oil reservoirs are more when state switching, that is, are located at picture
Ink on plain electrode is not easy to empty back into raceway groove, contrast it is low (Journal of display technology, 11,
2015,175), and this method processing efficiency efficiency is low, can not prepare on a large scale.
Scheme two, on substrate by sputter etc. schemes prepare one layer of metal, pass through pattern technology such as chemical wet etching
Patterned electrodes are prepared, either the schemes such as ALD or spin coating prepare dielectric layer by CVD on its surface, logical in dielectric layer surface
The standby dumbbell shape figure that dielectric layer is exposed of optical graving is crossed, hydrophobic layer is prepared by spin coating or czochralski method, by dyeing water
The mobile realization bistable state of drop.But this method, which needs to block half region, could realize switching effect, aperture opening ratio is low, while ruler
It is very little larger, it is unfavorable for realizing miniaturization.(Journal of SID,16/2,2008,237)
Invention content
The present invention provides a kind of special electrode structural designs, can not only realize bistable electro wetting display, and
With operation, voltage is low and the high advantage of contrast, can improve problem of the existing technology.
Technical solution provided by the invention is：
A kind of bistable electro wetting structure, including underlying substrate layer and the encapsulated layer being located above, the substrate
The array for having pixel graphics block is prepared on layer, it is characterised in that：Also it is equipped with electrode successively between the substrate layer and encapsulated layer
The lower surface of layer, hydrophobic layer, ink layer and water layer, the encapsulated layer is equipped with conductive layer, and hydrophobic layer covers electrode layer comprehensively, described
Electrode layer continuously covers all pixels graph block, and there are accommodate ink between covering electrode layer and the pixel graphics block of hydrophobic layer
The electrode layer segment of raceway groove, covering pixel graphics block is pixel electrode, covers the electrode layer in gap between adjacent pixel graph block
Part is channel electrode, and the pixel graphics block uses light transmission insulating materials.
Further, to prevent from leaking electricity, ensure display effect, one layer of dielectric is set between the electrode layer and hydrophobic layer
Layer.
The electrode pattern prepared on the electrode layer is that there are two the defect electrode pattern at concave arc position, two concave arc positions for tool
It is arranged in a manner of diagonal in the top surface of pixel electrode.
Preferably, the substrate layer uses the silicon chip with oxide layer, glass or PET, PEN or PI material, the pixel
Electrode block is one kind in SU-8, silica, silicon nitride material, and the electrode layer is Al or ITO materials, and the conductive layer is selected
ITO materials.
A kind of preparation process of bistable electro wetting structure, which is characterized in that include the following steps：
1) multiple pixel graphics blocks with certain altitude are prepared in substrate layer surface, forms pixel graphics block array, phase
There are gaps between adjacent pixel graphics block；
2) conductive film for preparing one layer on pixel graphics block uniformly and continuously covering, forms electrode layer；
3) layer photoresist is prepared in electrode layer surface；
4) according to required electrode pattern, corresponding photoetching offset plate figure is prepared by optical exposure and aobvious fixing technologies；
5) the electrode layer segment exposed after exposure imaging is etched away, target electrode figure is obtained, for controlling ink two
Switching between a stable state；
6) photoresist is removed, one layer of hydrophobic layer is prepared on electrode layer；
8) ink is filled, ink is injected in the raceway groove between pixel graphics block；
9) it encapsulates, covers water layer on the sample after filling ink, be used in combination the glass-encapsulated layer with ITO conductive layer water and ink
Water-stop is between substrate layer and encapsulated layer.
On the basis of said program, it is further improved or preferred scheme further includes：
In step 1), SU-8 is sprayed on the substrate layer made of the silicon chip with oxide layer, glass or PET, PEN or PI material
Glue obtains pixel graphics block using mask plate by exposure imaging technology, toasts 30 minutes, makes on 150 DEG C of hot plate later
Solidification.
In step 2), the method for using magnetron sputtering uniformly plates thickness as the Al films of 80nm on pixel graphics block, covers
Gap between the top surface of lid pixel graphics block, side and adjacent pixel graph block.
In step 6), under the conditions of 1k rpm, spin coating 3%wt cytop solution prepares hydrophobic layer, and is dried at 180 DEG C
It is dry.
In step 3), photoresist use Shipley S1813, after coating at 115 DEG C front baking 1 minute.
In step 6), photoresist is removed using Remover PG glue-dispensers.
After the step 6) is included in removal photoresist, before preparing hydrophobic layer, in the step of preparing dielectric layer on electrode layer.
The Si of 800nm thickness is prepared in step 6) using PECVD methods3N4Dielectric layer.
Pixel electrode and channel electrode are prepared by using transparent conductive material, realizes that transmission-type bistable electro moistening is aobvious
Show；Pixel electrode and channel electrode are prepared by using high-reflectivity metal conductive material, realizes reflection type bistable state electricity moistening
Display.
Advantageous effect：
1) in bistable electro of the invention wetting structure, after channel electrode making alive, in ink motion to pixel electrode
Side, after channel electrode removes voltage, ink, which is stablized, to be located above pixel electrode；After making alive on pixel electrode, ink fortune
It moves in raceway groove, after removing pixel voltage, ink, which is stablized, to be located in raceway groove.
2) increase by a layer insulating medium among electrode layer and hydrophobic layer, can more effectively prevent from leaking electricity, ensure display
Effect；
3) by the design of defect electrode pattern, the distribution of electric field is adjusted, the direction of motion of oil reservoir is guided, makes bistable electro
The reliability of moistening display is further improved.
4) preparation process of the present invention is prepared using full photoetching process, is easy to large-scale processing, simultaneously because special structure
Design reduces electrode (pixel electrode and channel electrode) at a distance from water layer, not only significantly reduces the work of bistable electro wetting
Make voltage, while being conducive to improve the contrast and reliability of bistable electro wetting display, and can realize transmission-type and reflection
Two kinds of bistable electro wetting displays of formula.
Description of the drawings
Fig. 1 is the structural schematic diagram of the prior art；
Fig. 2 is the flow diagram of preparation process of the present invention；
Fig. 3 is that ink is located at the schematic diagram above pixel electrode；
Fig. 4 is that ink is located at the schematic diagram on channel electrode；
Fig. 5 is the structural schematic diagram of defect electrode pattern of the present invention；
Specific implementation mode
For the technical solution and operation principle that the present invention is furture elucidated, done in detail with reference to specific embodiment and attached drawing
Thin introduction.
Embodiment one：
A kind of bistable electro soaks structure, as shown in Figures 2 to 4, including substrate layer 6 (bottom sheet), encapsulated layer 1 (upper piece) with
And it is sealed in pixel graphics layer between the two, electrode layer 5, hydrophobic layer 4, ink layer 9 and water layer 3.
Pixel graphics layer array of pixel graphics block 7 made of light transmission insulating materials is constituted, the encapsulated layer 1
Lower surface is equipped with ITO conductive layer 2, and covering electrode layer 5, electrode layer 5 continuously cover all pixels graph block 7, cover hydrophobic layer 4 comprehensively
There are the raceway groove for accommodating ink, the electrode layers of covering pixel graphics block 7 between lid electrode layer 5 and the pixel graphics block 7 of hydrophobic layer 4
Part is pixel electrode 5-1, and the electrode layer segment in 7 gap of covering adjacent pixel graph block is channel electrode 5-2.Such as Fig. 3, Fig. 4
Shown, after channel electrode making alive, above ink motion to pixel electrode, after channel electrode removes voltage, ink stablizes position
Above pixel electrode；After making alive on pixel electrode, in ink motion to raceway groove, after removing pixel voltage, ink is stablized
In raceway groove.
The preparation process of above-mentioned bistable electro wetting structure specifically includes following steps：
1) it is prepared on substrate layer 6 (silicon chip, glass, PET, PEN or PI material with oxide layer) surface multiple with certain
The square pixels graph block 7 of height, forms pixel graphics block array, and there are gap, the present embodiment between adjacent pixel graph block 7
In, spraying SU-8 photoresists pass through exposure imaging skill by the way of uv-exposure using mask plate first on substrate layer 6
Art obtains pixel graphics block, later toasts pixel graphics block 30 minutes on 150 DEG C of hot plate, is allowed to cure；
2) magnetron sputtering rotation inclination angle coating process is used to prepare a layer thickness on pixel graphics block 7 as the conduction of 80nm
Film (such as Al films), the gap between the top surface of uniform fold pixel graphics block 7, side and adjacent pixel graph block 7 form electricity
Pole layer 5；
3) 5 surface of electrode layer coat a layer photoresist 8, due to being solid figure layer, in the case that high speed rotation cannot
Guarantee is completely covered, therefore lifts coating method or low speed spin coating, or thickness as needed is using other suitable
Spraying conditions carry out front baking later, and the photoresist used in the present embodiment is Shipley S1813, after spraying, at 115 DEG C
At a temperature of front baking 1 minute.
4) according to preset electrode pattern, corresponding photoetching offset plate figure is prepared by optical exposure and aobvious fixing technologies；
5) the electrode layer segment 10 exposed after exposure imaging is etched away, target electrode figure is obtained, exists for controlling ink
Switching between two stable states；
6) Remover PG glue-dispensers are utilized to remove photoresist 8, under the conditions of 1k rpm, spin coating 3%wt cytop solution
Hydrophobic layer 4 is prepared, and is dried at 180 DEG C；
8) ink is filled, ink 9 is injected in the raceway groove between pixel graphics block 7；
9) it encapsulates, water layer 3 is covered on the sample after filling ink, is used in combination the encapsulated layer 1 with ITO conductive layer water and ink
It is sealed in substrate layer 6 and encapsulated layer 1.
The display product prepared using above-mentioned technique, operation voltage only needs 40~60V, and the bistable state of the prior art
The operation voltage of electric moist products needs 70~140V.
On the basis of the present embodiment, pixel electrode and channel electrode are prepared using transparent conductive material, it can be achieved that transmission
The moistening display of formula bistable electro；Pixel electrode and channel electrode are prepared using high-reflectivity metal conductive material, it can be achieved that reflection
The moistening display of formula bistable electro.
Embodiment two：
On the basis of embodiment one, to make display effect obtain higher guarantee, in the step 6), photoetching is removed
After glue, before preparing hydrophobic layer 4, increases on electrode layer 5 and prepare the dielectric layer (not shown) that one layer of dielectric is constituted, given an account of
The Si of PECVD methods preparation can be used in electric layer3N4Or silicon oxide layer (such as the Si of 800nm thickness3N4Material), ALD can also be utilized
The insulating layer (such as aluminium oxide, hafnium oxide etc.) of method growth.
Embodiment three：
On the basis of embodiment one, embodiment two, it is preferred to use electrode pattern as shown in Figure 5, such as solid line institute in figure
Show, etches the rectangular profile on 7 top electrode layer of pixel graphics block, the lower left corner and the upper right corner are respectively provided with a concave curvilinear portion
Position forms double defect electrodes.Dotted line illustrates that pixel graphics block, solid line represent point of pixel electrode and channel electrode in Fig. 5
The place that electrode layer is etched away in secant, that is, step 5).
The present invention can realize prepared by solid figure electrode machining, in this case electrode and oil reservoir, water layer, hydrophobic layer three
The distance of contact of connecting is greatly reduced, known to electrowetting theory in state conversion and control, the operation needed for product of the present invention
Voltage is greatly reduced compared with the existing technology, may be implemented preferably to manipulate oil reservoir, improves contrast, while coordinating double defects
The design of electrode pattern preferably can guide oil reservoir to be shunk from electrode pattern.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, the present invention
Claimed range is delineated by the appended claims, the specification and equivalents thereof from the appended claims.
Claims (10)
1. a kind of bistable electro soaks structure, including underlying substrate layer (6) and the encapsulated layer (1) that is located above, it is described
The array for there are pixel graphics block (7) is prepared on substrate layer (6), it is characterised in that：The substrate layer (6) and encapsulated layer (1) it
Between also successively be equipped with electrode layer (5), hydrophobic layer (4), ink layer (9) and water layer (3), the lower surface of the encapsulated layer (1) is equipped with
Conductive layer (2), hydrophobic layer (4) cover electrode layer (5) comprehensively, and the electrode layer (5) continuously covers all pixels graph block (7),
There are the raceway grooves for accommodating ink between covering electrode layer (5) and the pixel graphics block (7) of hydrophobic layer (4), cover pixel graphics block
(7) electrode layer segment is pixel electrode (5-1), and the electrode layer segment in gap is ditch between covering adjacent pixel graph block (7)
Road electrode (5-2), the pixel graphics block (7) use light transmission insulating materials.
2. a kind of bistable electro according to claim 1 soaks structure, which is characterized in that the electrode layer (5) with it is hydrophobic
Dielectric layer is equipped between layer (4).
3. a kind of bistable electro according to claim 1 soaks structure, which is characterized in that prepared on the electrode layer (5)
Electrode pattern be tool there are two concave arc position defect electrode pattern, two concave arc positions be arranged in a manner of diagonal pixel electricity
The top surface of pole.
4. a kind of bistable electro according to any one of claim 1-3 soaks structure, which is characterized in that the substrate layer
(6) it is the silicon chip with oxide layer, glass or PET, PEN or PI material, the pixel electrode block (7) is SU-8, silica, nitridation
One kind in silicon materials, the electrode layer (5) are Al or ITO materials, and the conductive layer (2) is ITO materials.
5. a kind of preparation process of bistable electro wetting structure, which is characterized in that include the following steps：
1) multiple pixel graphics blocks (7) with certain altitude are prepared in substrate layer surface, forms pixel graphics block array, it is adjacent
There are gaps between pixel graphics block (7)；
2) conductive film for preparing one layer on pixel graphics block uniformly and continuously covering, forms electrode layer (5)；
3) layer photoresist (8) is prepared on electrode layer (5) surface；
4) according to required electrode pattern, corresponding photoetching offset plate figure is prepared by optical exposure and aobvious fixing technologies；
5) the electrode layer segment (10) exposed after exposure imaging is etched away, target electrode figure is obtained, for controlling ink two
Switching between a stable state；
6) removal photoresist (8) prepares one layer of hydrophobic layer (4) on electrode layer；
8) ink is filled, in the raceway groove between ink (9) injection pixel graphics block (7)；
9) it encapsulates, covering water layer (3), is used in combination the encapsulated layer (1) with ITO conductive layer water and ink on the sample after filling ink
It is sealed in substrate layer (6) and encapsulated layer (1).
6. a kind of preparation process of bistable electro wetting structure according to claim 5, it is characterised in that：
In step 1), SU-8 glue is sprayed on the substrate layer made of the silicon chip with oxide layer, glass or PET, PEN or PI material,
Pixel graphics block is obtained by exposure imaging technology using mask plate, is toasted 30 minutes on 150 DEG C of hot plate later, is allowed to solid
Change；
In step 2), the Al films that the method that uses magnetron sputtering uniformly plates thickness as 80nm on pixel graphics block (7), covering
Gap between the top surface of pixel graphics block (7), side and adjacent pixel graph block (7)；
In step 6), under the conditions of 1k rpm, spin coating 3%wt cytop solution prepares hydrophobic layer (4), and is dried at 180 DEG C.
7. a kind of preparation process of bistable electro wetting structure according to claim 6, it is characterised in that：
In step 3), photoresist use Shipley S1813, after coating at 115 DEG C front baking 1 minute；
In step 6), photoresist is removed using Remover PG glue-dispensers.
8. a kind of preparation process of bistable electro wetting structure according to claim 5, it is characterised in that：
In the step 6), after being included in removal photoresist, before preparing hydrophobic layer (4), dielectric layer is prepared on electrode layer (5)
The step of.
9. a kind of preparation process of bistable electro wetting structure according to claim 8, it is characterised in that：
The Si of 800nm thickness is prepared in step (6) using PECVD methods3N4Dielectric layer.
10. a kind of preparation process of bistable electro wetting structure according to any one of claim 5-9, feature exist
In：
Pixel electrode and channel electrode are prepared by using transparent conductive material, realizes the moistening display of transmission-type bistable electro；
Pixel electrode and channel electrode are prepared by using high-reflectivity metal conductive material, realizes reflection type bistable state electricity moistening
Display.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109932815A (en) * | 2019-03-08 | 2019-06-25 | 华南师范大学 | A kind of bistable electro wetting display base plate and preparation method thereof and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040055891A1 (en) * | 2002-09-24 | 2004-03-25 | Pamula Vamsee K. | Methods and apparatus for manipulating droplets by electrowetting-based techniques |
| CN101267889A (en) * | 2005-07-19 | 2008-09-17 | 硅生物系统股份公司 | Method and apparatus for the manipulation and/or the detection of particles |
| CN105676444A (en) * | 2016-03-16 | 2016-06-15 | 华南师范大学 | Electrowetting bistable electrofluid display device |
| CN106125291A (en) * | 2016-06-27 | 2016-11-16 | 华南师范大学 | A kind of bistable state electric moistening display and preparation method thereof |
| CN107754962A (en) * | 2017-11-22 | 2018-03-06 | 南方科技大学 | Digital microfluidic droplet driving device and driving method |
-
2018
- 2018-05-11 CN CN201810449460.0A patent/CN108627969B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040055891A1 (en) * | 2002-09-24 | 2004-03-25 | Pamula Vamsee K. | Methods and apparatus for manipulating droplets by electrowetting-based techniques |
| CN101267889A (en) * | 2005-07-19 | 2008-09-17 | 硅生物系统股份公司 | Method and apparatus for the manipulation and/or the detection of particles |
| CN105676444A (en) * | 2016-03-16 | 2016-06-15 | 华南师范大学 | Electrowetting bistable electrofluid display device |
| CN106125291A (en) * | 2016-06-27 | 2016-11-16 | 华南师范大学 | A kind of bistable state electric moistening display and preparation method thereof |
| CN107754962A (en) * | 2017-11-22 | 2018-03-06 | 南方科技大学 | Digital microfluidic droplet driving device and driving method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109932815A (en) * | 2019-03-08 | 2019-06-25 | 华南师范大学 | A kind of bistable electro wetting display base plate and preparation method thereof and display device |
| CN109932815B (en) * | 2019-03-08 | 2024-05-17 | 华南师范大学 | Bistable electrowetting display substrate, preparation method thereof and display device |
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