CN207503983U - Display base plate and display panel - Google Patents
Display base plate and display panel Download PDFInfo
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- CN207503983U CN207503983U CN201721398359.4U CN201721398359U CN207503983U CN 207503983 U CN207503983 U CN 207503983U CN 201721398359 U CN201721398359 U CN 201721398359U CN 207503983 U CN207503983 U CN 207503983U
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Abstract
The utility model discloses a kind of display base plate and display panel, which includes：Underlay substrate is formed with thin film transistor (TFT) and luminescent device on underlay substrate；Thin film transistor (TFT) includes：Interlayer insulating film is formed between active layer, source electrode and drain electrode, active layer and source electrode, drain electrode, the first via and the second via are provided on interlayer insulating film, luminescent device is located in the first via, and drain electrode is connected by the anode of the second via and luminescent device.Compared with prior art, the technical solution of the utility model is by changing the relative position between thin film transistor (TFT) and light-emitting component, light-emitting component is set in the first via in interlayer insulating film, so that light-emitting component and thin film transistor (TFT) are substantially at the sustained height position on underlay substrate, it is incident upon on the active layer in thin film transistor (TFT) so as to avoid the illumination that light-emitting component is sent out, and then ensure that thin film transistor (TFT) job stability.
Description
Technical field
The utility model is related to display technology field, more particularly to a kind of display base plate and display panel.
Background technology
Fig. 1 is a kind of schematic cross-section of display base plate involved in the prior art, as shown in Fig. 1, the display base plate packet
It includes：Thin film transistor (TFT) 2 and light-emitting component 3, wherein, thin film transistor (TFT) 2 is formed with passivation layer 8 backwards to the side of underlay substrate 1, sends out
Optical element 2 is located at passivation layer 8 backwards to the side of underlay substrate 1, the anode of light-emitting component 3 by the via on passivation layer 8 with it is thin
The drain electrode connection of film transistor 2.
It finds, since light-emitting component 3 is located at thin film transistor (TFT) 2 backwards to the side of underlay substrate 1, shines in practical applications
There are larger segment difference between element 3 and thin film transistor (TFT) 2, then when light-emitting component 3 is worked, portion that light-emitting component 3 is sent out
The active layer being divided in inevitable directive thin film transistor (TFT) 2.At the same time, since the semi-conducting material of active layer is to illumination
Sensitivity, under light illumination its electrology characteristic can change, the threshold voltage of thin film transistor (TFT) drifts about.
In addition, for external ambient light is avoided to be incident upon active layer, then often set between thin film transistor (TFT) and underlay substrate
One layer of metallic film, to block ambient light.However, since metallic film has certain reflex, when light-emitting component generates
Part light when being incident upon metal film surfaces (backwards to a side surface of underlay substrate), which can be in metallic film table
Face is reflected, and directive active layer, can also cause the threshold voltage shift problem of thin film transistor (TFT) to a certain extent.
It can be seen that the threshold voltage of the thin film transistor (TFT) on existing display base plate easily drifts about, the operation is stable
Property is poor.
Utility model content
The utility model is intended at least solve one of technical problem in the prior art, it is proposed that a kind of display base plate
And display panel.
To achieve the above object, the utility model provides a kind of display base plate, including：Underlay substrate, the substrate base
Thin film transistor (TFT) and luminescent device are formed on plate；
The thin film transistor (TFT) includes：Shape between active layer, source electrode and drain electrode, the active layer and the source electrode, drain electrode
Into there is interlayer insulating film, the first via and second via are provided on the interlayer insulating film, the luminescent device is located at
In first via, the drain electrode is connect by second via with the anode of the luminescent device.
Optionally, the luminescent device includes：Far from the anode, the hair sequentially formed on the underlay substrate direction
Photosphere and cathode；
The anode is formed with buffer layer backwards to the side of the underlay substrate, and first mistake is corresponded on the buffer layer
The position in hole is formed with third via, and the position of corresponding second via is formed with the 4th via；
The luminescent layer is located in the third via；
The thin film transistor (TFT) is located at the buffer layer backwards to the side of the underlay substrate, and the drain electrode passes through described the
Two vias, the 4th via are connect with the anode.
Optionally, it further includes：With the extinction figure of anode same layer setting, the active layer is in the extinction figure institute
Orthographic projection in place's plane is fallen completely on the extinction figure.
Optionally, the material of the anode and the extinction figure is tin indium oxide.
Optionally, shading graph, the thin film transistor (TFT) are formed between the thin film transistor (TFT) and the underlay substrate
It is fallen completely in the shading graph in the orthographic projection of plane residing for the shading graph；
The material of the shading graph is black resin material.
Optionally, the light that the luminescent device is sent out is white light, is formed between the luminescent device and the underlay substrate
Chromatic colour filter pattern.
To achieve the above object, the utility model additionally provides a kind of display panel, including：Display base plate as described above.
To achieve the above object, the utility model additionally provides a kind of preparation method of display base plate, including：
Thin film transistor (TFT) is formed, the thin film transistor (TFT) includes：Active layer, source electrode and drain electrode, the active layer with it is described
Interlayer insulating film is formed between source electrode, drain electrode, the first via and second via are provided on the interlayer insulating film；
Luminescent device is formed, the luminescent device is located in first via, and the drain electrode passes through second via
It is connect with the anode of the luminescent device.
Optionally, the step of the step of forming thin film transistor (TFT) is with forming luminescent device specifically includes：
Anode is formed on underlay substrate；
In the anode buffer layer is formed backwards to the side of the underlay substrate；
In the buffer layer active layer is formed backwards to the side of the underlay substrate；
Gate insulation layer is formed backwards to the side of the underlay substrate and grid, the gate insulation layer are located in the active layer
Between the grid and the active layer；
Interlayer insulating film is formed backwards to the side of the underlay substrate in the grid, is formed on the interlayer insulating film
First via, second via and the 5th via；
The position that first via is corresponded on the buffer layer forms third via, the position of corresponding second via
It puts to form the 4th via；
In the interlayer insulating film source electrode and drain electrode, the source electrode and the leakage are formed backwards to the side of the underlay substrate
Pole is connect by corresponding 5th via with the active layer, it is described drain electrode by second via, the 4th via with
The anode connection；
Luminescent layer is formed in the third via；
In the luminescent layer cathode is formed backwards to the side of the underlay substrate.
Optionally, it is described to be further included before the step of anode is formed on underlay substrate：
Shading graph is formed on underlay substrate, the follow-up thin film transistor (TFT) to be formed is completely covered in the shading graph
Region；
Color filter pattern is formed on underlay substrate, the color filter pattern corresponds to follow-up light-emitting component to be formed
Region；
It is described to be further included while the step that anode is formed on underlay substrate：
The extinction figure with anode same layer setting is formed, the extinction figure is completely covered follow-up to be formed described thin
The region of film transistor.
The utility model has the advantages that：
The utility model discloses a kind of display base plate and display panel, which includes：Underlay substrate, substrate base
Thin film transistor (TFT) and luminescent device are formed on plate；Thin film transistor (TFT) includes：Active layer, source electrode and drain electrode, active layer and source electrode,
Interlayer insulating film is formed between drain electrode, is provided with the first via and the second via on interlayer insulating film, luminescent device is located at the
In one via, drain electrode is connected by the anode of the second via and luminescent device.Compared with prior art, the technology of the utility model
Light-emitting component is set to positioned at interlayer insulating film by scheme by changing the relative position between thin film transistor (TFT) and light-emitting component
In the first via in so that light-emitting component and thin film transistor (TFT) are substantially at the sustained height position on underlay substrate, from
And it avoids the illumination that light-emitting component is sent out and is incident upon on the active layer in thin film transistor (TFT), and then ensure that thin film transistor (TFT) works
Stability.
Description of the drawings
Fig. 1 is a kind of schematic cross-section of display base plate involved in the prior art；
Fig. 2 is the schematic cross-section of a kind of display base plate that the utility model embodiment one provides；
Fig. 3 is the flow chart of the preparation method of display base plate that the utility model embodiment one provides；
Fig. 4 is the flow chart of the preparation method of display base plate that the utility model embodiment three provides；
Fig. 5 a~5k are the schematic cross-section for the intermediate structure for preparing display base plate shown in Fig. 2.
Specific embodiment
For those skilled in the art is made to more fully understand the technical solution of the utility model, below in conjunction with the accompanying drawings to this reality
It is described in detail with the display base plate and display panel of novel offer.
Fig. 2 is the schematic cross-section of a kind of display base plate that the utility model embodiment one provides, as shown in Fig. 2, this is aobvious
Show that substrate includes：Underlay substrate 1 is formed with thin film transistor (TFT) 2 and luminescent device on underlay substrate 1, and thin film transistor (TFT) 2 includes：
It is exhausted to be formed with interlayer between active layer 201 and source electrode 202, drain electrode 203 for grid 204, active layer 201, source electrode 202 and drain electrode 203
Edge layer 7 (Inner Layer Dielectric, abbreviation ILD) is provided with the first via 7a and the second mistake on interlayer insulating film 7
Hole 7b, luminescent device are located in the first via 7a, and drain electrode 203 is connected by the anode 301 of the second via 7b and luminescent device.
In the present embodiment, by thin film transistor (TFT) 2 to carry out exemplary description for top gate type thin film transistor, due to top
There is no overlapping region between grid 204 and the drain electrode of source electrode 202/ 203 in gate type thin film transistor 2, therefore with smaller
Parasitic capacitance reduces RC delays, and reflecting has higher switching speed in pixel circuit, so as to easy to implement higher
The OLED of resolution ratio is shown.Specifically, grid 204 be located at active layer 201 backwards to underlay substrate 1 side, grid 204 with it is active
Being provided with gate insulation layer 9 between layer 201, (figure of gate insulation layer 9 is identical with the figure of grid 204, can pass through self-registered technology
Prepared), interlayer insulating film 7 is located at active layer 201, grid 204 backwards to the side of underlay substrate 1, source electrode 202 and drain electrode
203 are located at interlayer insulating film 7 backwards to the side of underlay substrate 1 and by the 5th via 7c corresponding on interlayer insulating film 7 with having
Active layer 201 connects.It, can be to active layer to reduce with source electrode 202, the resistance for the 203 contact portion 201a that drain on active layer 201
With source electrode 202,203 contact portion 201a of drain electrode into column conductor on 201, not by the part 202b of conductor on active layer 201
As channel region, the channel region is corresponding with region residing for grid 204.
Those skilled in the art are it should also be understood that bottom gate thin film transistor is also applied for the technical side of the utility model
Case, concrete condition is without detailed description.
Light-emitting component 3 in the utility model for Organic Light Emitting Diode (Organic Light-Emitting Diode,
Abbreviation OLED), generally comprise anode 301, cathode 303 and the luminescent layer 302 between anode 301 and cathode 303.Certainly,
The structures such as hole/electron transfer layer, the hole/electronic barrier layer for improving luminous efficiency be may also include in OLED (in attached drawing
It is not shown), it all should belong to the protection range of the utility model.
Compared with prior art, the technical solution of the utility model by change thin film transistor (TFT) 2 and light-emitting component 3 it
Between relative position, light-emitting component 3 is set in the first via 7a in interlayer insulating film 7, so that light-emitting component
3 and thin film transistor (TFT) 2 be substantially at sustained height position on underlay substrate 1, the illumination sent out so as to avoid light-emitting component 3
It is incident upon on the active layer 201 in thin film transistor (TFT) 2, and then ensure that 2 job stability of thin film transistor (TFT).
As a kind of specific alternative, anode 301 is formed with buffer layer 6, buffer layer 6 backwards to the side of underlay substrate 1
The position of upper the first via of correspondence 7a is formed with third via 6a, and the position of corresponding second via 7b is formed with the 4th via 6b,
Luminescent layer 302 is located in third via 6a；Thin film transistor (TFT) 2 is located at buffer layer 6 backwards to the side of underlay substrate 1, drain electrode 203
It is connect by the second via 7b, the 4th via 6b with anode 301.
It should be noted that when there are during buffer layer 6, the third via 6a on buffer layer 6 exists for the first via 7a
Extension on buffer layer 6, anode 301 is located at third via 6a bottoms at this time, luminescent layer 302 is located at feelings in third via 6a
Condition, description with aforementioned " luminescent device is located in the first via 7a " not contradiction.
In the present embodiment, it is formed before luminescent layer 302 in third via 6a (the first via 7a), it is also necessary in source
Pole 202 and drain electrode 203 form passivation layer 8 backwards to the side of underlay substrate 1, and the position shape of the first via 7a is corresponded on passivation layer 8
Into the 6th via 8a.When preparing luminescent layer 302, luminescent material is deposited on third via 6a (the first mistakes by the 6th via 8a
Hole 7a) in.
It in the present embodiment, can be using buffer layer 6, interlayer insulating film 7 as pixel defining layer of the prior art
(Pixel Define Layer, abbreviation PDL), third via 6a, the first via 7a on interlayer insulating film 7 on buffer layer 6
As pixel well-defining, to accommodate each functional film layer (such as luminescent layer 302) in light-emitting component 3.Compared with prior art, originally
Embodiment technical solution may be such that the integral thickness of display base plate reduces, be conducive to show without pixel defining layer is separately provided again
Show the lightening of substrate.
To avoid 1 directive active layer 201 of external ambient light light-transmissive substrates substrate, in the present embodiment preferably, in film crystalline substance
Shading graph 11 is formed between body pipe 2 and underlay substrate 1, thin film transistor (TFT) 2 is in the orthographic projection of plane residing for shading graph 11
It falls completely in shading graph 11.It is further preferred that the material of shading graph 11 is black resin material.
Existing shading graph 11 is often prepared using metal material, since the specific heat capacity of metal material is smaller, then when
The temperature of its own can occur to vary widely (temperature rises rapidly), and because of shading graph 11 apart from thin after it absorbs certain light
The active layer 201 of film transistor 2 is closer to the distance, then the metal shading graph 11 of high-temperature can cause in the temperature of active layer 201
It rises, the electrology characteristic of active layer 201 changes, and influences the normal work of thin film transistor (TFT) 2.For this purpose, it is selected in the utility model
It is used as shading graph 11 with black resin material, since the specific heat capacity of black resin material is larger, thus when its absorption is certain
The temperature change of its own is smaller (temperature rise is slow) after light, so as to effectively prevent causing shadow to the temperature of active layer 201
It rings, ensure that the job stability of thin film transistor (TFT) 2.
Preferably, which further includes：Extinction figure 5, (the two can with the setting of 301 same layer of anode for extinction figure 5
It is formed by a patterning processes).In the present embodiment, it is inhaled by being set in shading graph 11 backwards to the side of underlay substrate 1
Light figure 5, which can effectively absorb the ambient light through shading graph 11, so as to further avoid ring
Border illumination is incident upon active layer 201.In the present embodiment, optionally, the material of anode 301 and extinction figure 5 is tin indium oxide.It needs
Illustrate, although indium tin oxide material is transparent material, it has certain absorption to light.
It should be noted that avoid the problem that accumulating multi-charge on extinction figure 5 electric discharge occurs in the present embodiment,
Preferably, extinction figure 5 is connect with anode 301.
As a kind of alternative in the utility model, the light that luminescent device is sent out is white light, luminescent device and substrate
Color filter pattern 10 is formed between substrate 1, so that display base plate can carry out colored display.It should be noted that white light
The design of luminescent device and color filter pattern 10 can not only realize colored display, and the color filter pattern 10 can also be
It plays a role in filtering to a certain extent to external ambient light, can effectively reduce and be injected from light-emitting zone and directive active layer 201
Light quantity can ensure the job stability of thin film transistor (TFT) 2 to a certain extent.The problem of to avoid the occurrence of light leakage, may be such that coloured silk
The covering certain to the marginal existence of shading graph 11 of color filter pattern 10.
It, can be in shading graph 11 and color filter pattern 10 backwards after shading graph 11 and color filter pattern 10 is formed
The side of underlay substrate 1 forms the protective layer 4 (Over Coat, abbreviation OC) that one layer of flood is laid with, and anode 301 is set to protection
Layer 4 is backwards to the side of underlay substrate 1.
Suitable luminescent layer 302 also can be selected in certain the present embodiment, so that the light that luminescent device is sent out is colourama, this
Shi Wuxu sets color filter pattern 10, which should also belong to the protection scope of the utility model.
It should be noted that above-mentioned anode 301 is located at buffer layer 6 towards the side of underlay substrate 1, active layer 201 is located at
For buffer layer 6 backwards to the situation of the side of underlay substrate 1, a kind of alternative only in the present embodiment will not be to this practicality
Novel technical solution generates limitation.Anode 301 in the utility model may be additionally located at other positions, for example, by active layer
201 and anode 301 be directly arranged at protective layer 4 backwards to the surface of one side of substrate, at this time without setting 6 (extinction of buffer layer again
Figure 5 can not also be set).For other situations, no longer illustrate one by one herein, those skilled in the art it should also be understood that but
All the first via 7a being placed in light-emitting component 3 in interlayer insulating film 7, so that light-emitting component 3 and thin film transistor (TFT) 2 are basic
The design of sustained height position on underlay substrate 1, all should belong to the protection range of the utility model.
The utility model embodiment one provides a kind of display base plate, light-emitting component and film crystal in the display base plate
Pipe is substantially at the sustained height position on underlay substrate, and the illumination so as to which light-emitting component effectively be avoided to send out is incident upon film crystal
On active layer in pipe, and then it ensure that the job stability of thin film transistor (TFT).In addition, shading graph and extinction figure are set
Meter, can effectively avoid external ambient light from exposing on the active layer in thin film transistor (TFT), can also ensure to a certain extent thin
The job stability of film transistor.
Fig. 3 is the flow chart of the preparation method of display base plate that the utility model embodiment one provides, as shown in figure 3, should
Preparation method is used to prepare the display base plate in above-described embodiment one, which includes：
Step S101, thin film transistor (TFT) is formed.
Wherein, thin film transistor (TFT) includes：It is formed between grid, active layer, source electrode and drain electrode, active layer and source electrode, drain electrode
There is interlayer insulating film, the first via and the second via are provided on interlayer insulating film.
Step S102, luminescent device is formed.
Wherein, luminescent device includes：Anode, cathode and the luminescent layer between anode and cathode.Luminescent device is located at
In first via, drain electrode is connected by the anode of the second via and luminescent device.
Fig. 4 is the flow chart of the preparation method of display base plate that the utility model embodiment three provides, and Fig. 5 a~5k are system
The schematic cross-section of the intermediate structure of display base plate shown in standby Fig. 2, as shown in Fig. 4 to Fig. 5 k, which is used to prepare
Display base plate shown in Fig. 2, the preparation method in embodiment one is stated to include：
Step S201, shading graph, color filter pattern and protective layer are formed on underlay substrate.
Referring to shown in Fig. 5 a, in step s 201, existing black matrix preparation process and color film preparation technique, difference are utilized
Shading graph 11 and color filter pattern 10 are formed on underlay substrate.Wherein, the material of shading graph 11 is black resin material
The region of follow-up thin film transistor (TFT) to be formed is completely covered in material, shading graph 11；Color filter pattern 10 corresponds to follow-up to be formed
The region of light-emitting component.To avoid the occurrence of leakage problem, color filter pattern 10 can cover the edge of shading graph 11.
After shading graph 11 and color filter pattern 10 has been prepared, in shading graph 11 and color filter pattern 10 backwards
The side of underlay substrate forms the protective layer 4 that one layer of flood is laid with, which can put forward shading graph and color filter pattern
For protection, damaged to avoid the shading graph 11 during subsequent production and color filter pattern 10.Wherein, protective layer 4
Material can be hard transparent resin or the mixture of silica and silicon nitride.
Step S202, anode and extinction figure are formed backwards to the side of underlay substrate in protective layer.
Referring to shown in Fig. 5 b, conductive material thin film is formed backwards to the side of underlay substrate 1 first on protective layer 4, wherein
The mode for forming film usually has the various ways such as deposition, coating, sputtering；Optionally, the material of conductive material thin film is oxidation
Indium tin.Then a patterning processes are carried out to conductive material thin film, to obtain anode 301 and extinction figure 5, wherein extinction figure
5 are completely covered the region of follow-up thin film transistor (TFT) to be formed.It avoids accumulating multi-charge on extinction figure 5 and discharging
Problem, it is preferable that extinction figure is connect with anode.
It should be noted that the patterning processes in the utility model generally include photoresist coating, exposure, development, etching,
The techniques such as photoresist lift off.
Step S203, in anode buffer layer is formed backwards to the side of underlay substrate.
Referring to shown in Fig. 5 c, cushioning layer material film is formed backwards to the side of underlay substrate 1 in anode 301, to be delayed
Rush layer 6.Optionally, the material of cushioning layer material film is silica.
Step S204, in buffer layer active layer is formed backwards to the side of underlay substrate.
Referring to shown in Fig. 5 d, active layer material film is formed backwards to the side of underlay substrate 1 in buffer layer 6 first；It is optional
Ground, the material of active layer material film is oxide semiconductor material.Then, a composition work is carried out to active layer material film
Skill, to obtain the figure of active layer 201.
Step S205, gate insulation layer and grid are formed backwards to the side of underlay substrate in active layer.
Referring to shown in Fig. 5 e, self-registered technology can be used to prepare gate insulation layer 9 and grid 204.Specifically, exist first
Active layer 201 sequentially forms gate insulator layer material film and grid metal film backwards to the side of underlay substrate 1.Then to grid metal
Film carries out a patterning processes, to obtain the figure of grid.Then it is thin to gate insulator layer material using grid 204 as mask
Film carries out plasma etching, to obtain the figure of gate insulation layer 9.Finally, after gate insulator layer material film completes etching, still
It maintains plasma etch process for a period of time, plasma is carried out with the part 201a not by gate insulation layer covering on active layer
Injection so that this is partially completed conductorization processing.
At this point, not by the part 201a that gate insulation layer 9 covers as conductor region on active layer 201, for subsequently with source electrode,
Drain electrode is attached；The part 201b covered on active layer 201 by gate insulation layer 9 is as channel region.
Step S206, in grid interlayer insulating film is formed backwards to the side of underlay substrate.
Referring to shown in Fig. 5 f, interlayer insulating layer material film is formed backwards to the side of underlay substrate 1 in grid 204 first；
Then a patterning processes are carried out to interlayer insulating film material film, to obtain the figure of interlayer insulating film 7, interlayer insulating film 7
On be formed with to form the first via 7a, the second via 7b and the 5th via 7c.
Step S207, the position for corresponding to the first via on the buffer layer forms third via, the position of corresponding second via
Form the 4th via.
Referring to shown in Fig. 5 g, a patterning processes are carried out to buffer layer 6, to correspond to the position of the first via 7a on the buffer layer
It puts to form third via 6a, the position of corresponding second via 7b forms the 4th via 6b.
Step S208, in interlayer insulating film source electrode and drain electrode is formed backwards to the side of underlay substrate.
Referring to shown in Fig. 5 h, drain metallic film is formed backwards to the side of underlay substrate 1 in interlayer insulating film 7 first；So
A patterning processes are carried out to drain metallic film afterwards, to obtain the figure of source electrode 202 and drain electrode 203.Wherein, 202 He of source electrode
Drain electrode 203 is connect by corresponding 5th via 7c with active layer, and drain electrode 203 passes through the second via 7b, the 4th via 6b and sun
Pole 301 connects.
Step S209, in source electrode and drain electrode passivation layer is formed backwards to the side of underlay substrate.
Referring to shown in Fig. 5 i, passivation material is formed backwards to the side of underlay substrate 1 in source electrode 202 and drain electrode 203 first
Film；Then a patterning processes are carried out to passivation material film, to obtain the figure of passivation layer 8, wherein, on passivation layer 8
The position of corresponding first via 7a is formed with the 6th via 8a.
Step S210, luminescent layer is formed in third via.
Referring to shown in Fig. 5 j, one layer of electroluminescent material film is formed in the substrate surface obtained by step S209, it is electroluminescent
Luminescent material thin-film is located at the luminescent layer 302 of the corresponding light-emitting component of part composition that anode 301 is in contact, the luminescent layer 302
In third via 6a.
It certainly, can also be by way of inkjet printing by the 6th via 8a, the interlayer on passivation layer 8 in the present embodiment
Electroluminescence material is instilled in the pixel well-defining that the third via 6a on the first via 7a, buffer layer 6 on insulating layer 7 is surrounded
Expect ink；Then by curing, being dried, to obtain the figure of luminescent layer 302.
Optionally, the light that luminescent layer 302 is sent out is white light.
Step S211, in luminescent layer cathode is formed backwards to the side of underlay substrate.
Referring to shown in Fig. 5 k, conductive material thin film is formed in the surface of the substrate obtained by step S210, using as cathode
303 (can also be patterned processing to conductive material thin film as needed certainly).Optionally, the material of cathode 303 is metal material
Material, metal material have certain reflex, can reflect the light that luminescent layer generates, to promote the light extraction of display base plate
Efficiency.
The utility model embodiment two and embodiment three are each provided with a kind of preparation method of display base plate, are passing through the system
In the display base plate that Preparation Method is prepared, light-emitting component and thin film transistor (TFT) are substantially at the sustained height position on underlay substrate
It puts, the illumination so as to which light-emitting component effectively be avoided to send out is incident upon on the active layer in thin film transistor (TFT), and then ensure that film crystalline substance
The job stability of body pipe.In addition, the design of shading graph and extinction figure, effectively can avoid external ambient light from exposing to film
On active layer in transistor, it can also ensure the job stability of thin film transistor (TFT) to a certain extent.
The utility model embodiment four provides a kind of display panel, which includes display base plate, the display base
Plate uses the display base plate in above-described embodiment one, and the specific descriptions of the display base plate can be found in above-described embodiment one
Corresponding contents, details are not described herein again.
It is understood that embodiment of above is merely to illustrate that the principle of the utility model and uses exemplary
Embodiment, however the utility model is not limited thereto.For those skilled in the art, this is not being departed from
In the case of the spirit and essence of utility model, various changes and modifications can be made therein, these variations and modifications are also considered as this reality
With novel protection domain.
Claims (9)
1. a kind of display base plate, which is characterized in that including：Underlay substrate, be formed on the underlay substrate thin film transistor (TFT) and
Luminescent device；
The thin film transistor (TFT) includes：It is formed between active layer, source electrode and drain electrode, the active layer and the source electrode, drain electrode
Interlayer insulating film, the first via and the second via are provided on the interlayer insulating film, and the luminescent device is located at described first
In via, the drain electrode is connect by second via with the anode of the luminescent device.
2. display base plate according to claim 1, which is characterized in that the luminescent device includes：Far from the substrate
The anode, luminescent layer and the cathode sequentially formed on orientation substrate；
The anode is formed with buffer layer backwards to the side of the underlay substrate, and first via is corresponded on the buffer layer
Position is formed with third via, and the position of corresponding second via is formed with the 4th via；
The luminescent layer is located in the third via；
The thin film transistor (TFT) is located at the buffer layer backwards to the side of the underlay substrate, and the drain electrode passes through second mistake
Hole, the 4th via are connect with the anode.
3. display base plate according to claim 2, which is characterized in that further include：With the extinction of anode same layer setting
Figure, the active layer are fallen completely in the orthographic projection residing for the extinction figure in plane on the extinction figure.
4. display base plate according to claim 3, which is characterized in that the extinction figure is connect with the anode.
5. display base plate according to claim 3, which is characterized in that the material of the anode and the extinction figure is oxygen
Change indium tin.
6. display base plate according to claim 1, which is characterized in that between the thin film transistor (TFT) and the underlay substrate
Shading graph is formed with, the thin film transistor (TFT) falls completely within the shading figure in the orthographic projection of plane residing for the shading graph
In shape.
7. display base plate according to claim 6, which is characterized in that the material of the shading graph is black resin material
Material.
8. display base plate according to claim 1, which is characterized in that the light that the luminescent device is sent out is white light, described
Color filter pattern is formed between luminescent device and the underlay substrate.
9. a kind of display panel, which is characterized in that including：Such as above-mentioned display base plate according to any one of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721398359.4U CN207503983U (en) | 2017-10-26 | 2017-10-26 | Display base plate and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721398359.4U CN207503983U (en) | 2017-10-26 | 2017-10-26 | Display base plate and display panel |
Publications (1)
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