CN108598242B - 一种氮化镓发光二极管及其制备方法 - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 89
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 230000000670 limiting effect Effects 0.000 claims abstract description 28
- 230000001681 protective effect Effects 0.000 claims abstract description 28
- 238000004806 packaging method and process Methods 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 22
- 230000017525 heat dissipation Effects 0.000 claims abstract description 21
- 239000003292 glue Substances 0.000 claims abstract description 13
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 12
- 239000010980 sapphire Substances 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000009434 installation Methods 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 5
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
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- 239000004014 plasticizer Substances 0.000 claims description 3
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- 230000005855 radiation Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
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- 230000002829 reductive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
本发明公开了一种氮化镓发光二极管及其制备方法,包括管脚、防尘套、密封圈、固定座、底板、紧固弹簧、挡板、固定卡块、封装体、保护套、第一陶瓷层、第一防静电层、散热层、防水层、第二防静电层、第二陶瓷层、P型电极、GaN:Mg层、InGaN多量子阱、GaN:Si层、GaN缓冲层、蓝宝石衬底、N型电极、限位弹簧、安装座、限位块、安装隔板和导热胶,所述封装体的两侧通过固定座安装有管脚,且管脚的外侧包裹有防尘套,所述固定座的内部通过螺栓安装有挡板,所述挡板的顶部两侧通过螺栓安装有两个底板,所述底板的一侧通过卡扣安装有紧固弹簧,该发光二极管,安装便捷,结构稳定,具有一定的抗冲击性,有效的提高了使用的方便性。
Description
技术领域
本发明涉及氮化镓发光二极管技术领域,具体为一种氮化镓发光二极管及其制备方法。
背景技术
发光二极管(lightemittingdiode)缩写及通称LED,是一种半导体固体发光器件;它是利用固体芯片作为发光材料,在半导体中通过载流子发生复合,放出过剩的能量而引起光子发射,发出红、黄、蓝、绿、青、橙、紫、白色的可见光或不可见光;现有技术中的发光二极管,结构繁冗,安装复杂,而且结构稳定性差,在使用时,抗震能力差,同时,现有技术中的发光二极管,功耗大,发光亮度低,远不能满足人们的使用需求,因此,设计一种氮化镓发光二极管及其制备方法是很有必要的。
发明内容
本发明的目的在于提供一种氮化镓发光二极管及其制备方法,以解决上述背景技术中提出的问题。
为实现上述目的,本发明提供如下技术方案:
一种氮化镓发光二极管,包括管脚、防尘套、密封圈、固定座、底板、紧固弹簧、挡板、固定卡块、封装体、保护套、第一陶瓷层、第一防静电层、散热层、防水层、第二防静电层、第二陶瓷层、P型电极、GaN:Mg层、InGaN多量子阱、GaN:Si层、GaN缓冲层、蓝宝石衬底、N型电极、限位弹簧、安装座、限位块、安装隔板和导热胶,所述封装体的两侧通过固定座安装有管脚,且管脚的外侧包裹有防尘套,所述固定座的内部通过螺栓安装有挡板,所述挡板的顶部两侧通过螺栓安装有两个底板,所述底板的一侧通过卡扣安装有紧固弹簧,且紧固弹簧的一侧通过螺栓安装有固定卡块,所述封装体的内部通过螺栓安装有保护套,所述保护套的内部的上下两侧通过螺栓安装有四个限位弹簧,所述保护套的内部的左右两侧通过螺栓安装有两个限位块,所述保护套通过限位弹簧和限位块与安装座连接,所述安装座的底部通过螺栓安装有安装隔板,所述安装隔板的顶部通过螺栓安装有二极管本体,且二极管本体的外侧包裹有导热胶,所述二极管本体的内部安装有P型电极,所述P型电极的底部固定连接GaN:Mg层,所述GaN:Mg层的底部固定连接InGaN多量子阱,所述InGaN多量子阱的底部固定连接GaN:Si层,所述GaN:Si层的顶部一侧固定连接N型电极,所述GaN:Si层的底部固定连接GaN缓冲层,所述GaN缓冲层的底部固定连接蓝宝石衬底。
一种氮化镓发光二极管制备方法,包括如下步骤:步骤一,二极管本体成型;步骤二,部件组装;步骤三,封装体的安装;
其中在上述的步骤一中,使得蓝宝石衬底的顶部一般先低温生长20nm-25nm的GaN缓冲层,然后在GaN缓冲层的顶部生长3nm-5nm的GaN:Si层,在GaN:Si层一侧的台面上淀积N型电极,然后在GaN:Si层的顶部生长InGaN多量子阱,之后在InGaN多量子阱的顶部生长0.5nm的GaN:Mg层,最后,在GaN:Mg层一侧的台面上淀积P型电极;
其中在上述的步骤二中,在二极管本体外侧套装有导热胶,将二极管本体安装在安装座的内部,再将保护套通过限位弹簧和限位块套装在安装座的外侧;
其中在上述的步骤三中,将管脚通过固定座与封装体连接,将保护套安装在封装体的内部。
根据上述技术方案,所述封装体的两侧开设有通孔,且通孔内填装有密封圈,且管脚穿过封装体和密封圈与固定座连接。
根据上述技术方案,所述保护套由第一陶瓷层、第一防静电层、散热层、防水层、第二防静电层和第二陶瓷层组成,所述第一陶瓷层的底部粘接有第一防静电层,所述第一防静电层的底部涂有散热层,所述散热层的底部粘接有防水层,所述防水层的底部粘接有第二防静电层,所述第二防静电层的底部粘接有第二陶瓷层。
根据上述技术方案,所述散热层为一种铜铁合金材料构件。
根据上述技术方案,所述防水层由二苯基甲烷二异氰酸酯、聚酯多元醇、增塑剂、填料和溶剂油组成。
根据上述技术方案,所述管脚通过电极引线与二极管本体的P型电极和N型电极连接。
与现有技术相比,本发明的有益效果是:本发明通过将二极管本体固定安装在安装座的内部的安装隔板上,二极管本体外侧包裹的导热胶能够有效的将二极管本体在工作时产生的热量散发;通过限位弹簧和限位块将安装座与保护套连接,限位弹簧能够通过弹性形变有效的将震动带来的冲击抵消,限位块能够有益于提高安装座与保护套之间的结构强度;封装体的内部安装完成后,将管脚经固定座固定安装在封装体的内部,即,握持防尘套将管脚穿过密封圈与固定卡块连接,使得管脚的底部与挡板接触,防尘套能够有效的避免灰尘堆积在管脚上,影响信号传输,在底板和紧固弹簧的作用下,紧固弹簧挤压固定卡块与管脚上的凹槽卡接,将管脚固定牢固,从而使得该氮化镓发光二极管组装完成,通过使用紧固弹簧能够提高连接的紧固性,在日常使用时,保护套能够有效的提高该氮化镓发光二极管的防水、散热、绝缘和防静电的性能;使得蓝宝石衬底的顶部一般先低温生长20nm-25nm的GaN缓冲层,能够有效的降低缺陷密度,大幅度提高发光效率,然后在GaN缓冲层的顶部生长3nm-5nm的GaN:Si层,GaN:Si层可以提高界面质量,部分屏蔽极化电场,增加辐射复合的几率,有利于提高亮度,在GaN:Si层一侧的台面上淀积N型电极,然后在GaN:Si层的顶部生长InGaN多量子阱,InGaN多量子阱能够有效的减少载流进入非辐射复合中心的可能,从而抑制了非辐射复合,有利于提高发光效率,之后在InGaN多量子阱的顶部生长0.5nm的GaN:Mg层,最后,在GaN:Mg层一侧的台面上淀积P型电极,GaN:Mg层有利于提高P型电极的电阻率,该发光二极管,安装便捷,结构稳定,具有一定的抗冲击性,有效的提高了使用的方便性。
附图说明
图1是本发明的整体立体结构示意图;
图2是本发明的封装体的整体结构示意图;
图3是本发明的固定座的内部结构示意图;
图4是本发明的保护套的剖视图;
图5是本发明的二极管的结构示意图;
图6是本发明的氮化镓发光二极管的制造方法流程图;
图中标号:1、管脚;2、防尘套;3、密封圈;4、固定座;5、底板;6、紧固弹簧;7、挡板;8、固定卡块;9、封装体;10、保护套;11、第一陶瓷层;12、第一防静电层;13、散热层;14、防水层;15、第二防静电层;16、第二陶瓷层;17、二极管本体;18、P型电极;19、GaN:Mg层;20、InGaN多量子阱;21、GaN:Si层;22、GaN缓冲层;23、蓝宝石衬底;24、N型电极;25、限位弹簧;26、安装座;27、限位块;28、安装隔板;29、导热胶。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1-5,本发明提供一种氮化镓发光二极管,包括管脚1、防尘套2、密封圈3、固定座4、底板5、紧固弹簧6、挡板7、固定卡块8、封装体9、保护套10、第一陶瓷层11、第一防静电层12、散热层13、防水层14、第二防静电层15、第二陶瓷层16、P型电极18、GaN:Mg层19、InGaN多量子阱20、GaN:Si层21、GaN缓冲层22、蓝宝石衬底23、N型电极24、限位弹簧25、安装座26、限位块27、安装隔板28和导热胶29,封装体9的两侧通过固定座4安装有管脚1,且管脚1的外侧包裹有防尘套2,固定座4的内部通过螺栓安装有挡板7,挡板7的顶部两侧通过螺栓安装有两个底板5,底板5的一侧通过卡扣安装有紧固弹簧6,且紧固弹簧6的一侧通过螺栓安装有固定卡块8,封装体9的内部通过螺栓安装有保护套10,保护套10的内部的上下两侧通过螺栓安装有四个限位弹簧25,保护套10的内部的左右两侧通过螺栓安装有两个限位块27,保护套10通过限位弹簧25和限位块27与安装座26连接,安装座26的底部通过螺栓安装有安装隔板28,安装隔板28的顶部通过螺栓安装有二极管本体17,且二极管本体17的外侧包裹有导热胶29,二极管本体17的内部安装有P型电极18,P型电极18的底部固定连接GaN:Mg层19,GaN:Mg层19的底部固定连接InGaN多量子阱20,InGaN多量子阱20的底部固定连接GaN:Si层21,GaN:Si层21的顶部一侧固定连接N型电极24,GaN:Si层21的底部固定连接GaN缓冲层22,GaN缓冲层22的底部固定连接蓝宝石衬底23。
参见图6,一种氮化镓发光二极管制备方法,包括如下步骤:步骤一,二极管本体17成型;步骤二,部件组装;步骤三,封装体9的安装;
其中在上述的步骤一中,使得蓝宝石衬底23的顶部一般先低温生长20nm-25nm的GaN缓冲层22,然后在GaN缓冲层22的顶部生长3nm-5nm的GaN:Si层21,在GaN:Si层21一侧的台面上淀积N型电极24,然后在GaN:Si层21的顶部生长InGaN多量子阱20,之后在InGaN多量子阱20的顶部生长0.5nm的GaN:Mg层19,最后,在GaN:Mg层19一侧的台面上淀积P型电极18;
其中在上述的步骤二中,在二极管本体17外侧套装有导热胶29,将二极管本体17安装在安装座26的内部,再将保护套10通过限位弹簧25和限位块27套装在安装座26的外侧;
其中在上述的步骤三中,将管脚1通过固定座4与封装体9连接,将保护套10安装在封装体9的内部。
根据上述技术方案,封装体9的两侧开设有通孔,且通孔内填装有密封圈3,且管脚1穿过封装体9和密封圈3与固定座4连接。
根据上述技术方案,保护套10由第一陶瓷层11、第一防静电层12、散热层13、防水层14、第二防静电层15和第二陶瓷层16组成,第一陶瓷层11的底部粘接有第一防静电层12,第一防静电层12的底部涂有散热层13,散热层13的底部粘接有防水层14,防水层14的底部粘接有第二防静电层15,第二防静电层15的底部粘接有第二陶瓷层16,有利于绝缘、防静电以及防水和散热。
根据上述技术方案,散热层13为一种铜铁合金材料构件,价格低廉,散热性能优良。
根据上述技术方案,防水层14由二苯基甲烷二异氰酸酯、聚酯多元醇、增塑剂、填料和溶剂油组成,能够有效的提高防水性能。
根据上述技术方案,管脚1通过电极引线与二极管本体17的P型电极18和N型电极24连接,便于进行电信号传输。
基于上述,本发明的优点在于,本发明通过将二极管本体17固定安装在安装座26的内部的安装隔板28上,二极管本体17外侧包裹的导热胶29能够有效的将二极管本体17在工作时产生的热量散发;通过限位弹簧25和限位块27将安装座26与保护套10连接,限位弹簧25能够通过弹性形变有效的将震动带来的冲击抵消,限位块27能够有益于提高安装座26与保护套10之间的结构强度;封装体9的内部安装完成后,将管脚1经固定座4固定安装在封装体9的内部,握持防尘套2将管脚1穿过密封圈3与固定卡块8连接,使得管脚1的底部与挡板7接触,防尘套2能够有效的避免灰尘堆积在管脚1上,影响信号传输,在底板5和紧固弹簧6的作用下,紧固弹簧6挤压固定卡块8与管脚1上的凹槽卡接,将管脚1固定牢固,从而使得该氮化镓发光二极管组装完成,通过使用紧固弹簧6能够提高连接的紧固性,在日常使用时,保护套10能够有效的提高该氮化镓发光二极管的防水、散热、绝缘和防静电的性能;使得蓝宝石衬底23的顶部一般先低温生长20nm-25nm的GaN缓冲层22,能够有效的降低缺陷密度,大幅度提高发光效率,然后在GaN缓冲层22的顶部生长3nm-5nm的GaN:Si层21,GaN:Si层21可以提高界面质量,部分屏蔽极化电场,增加辐射复合的几率,有利于提高亮度,在GaN:Si层21一侧的台面上淀积N型电极24,然后在GaN:Si层21的顶部生长InGaN多量子阱20,InGaN多量子阱20能够有效的减少载流进入非辐射复合中心的可能,从而抑制了非辐射复合,有利于提高发光效率,之后在InGaN多量子阱20的顶部生长0.5nm的GaN:Mg层19,最后,在GaN:Mg层19一侧的台面上淀积P型电极18,GaN:Mg层19有利于提高P型电极18的电阻率。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (7)
1.一种氮化镓发光二极管,包括管脚(1)、防尘套(2)、密封圈(3)、固定座(4)、底板(5)、紧固弹簧(6)、挡板(7)、固定卡块(8)、封装体(9)、保护套(10)、第一陶瓷层(11)、第一防静电层(12)、散热层(13)、防水层(14)、第二防静电层(15)、第二陶瓷层(16)、P型电极(18)、GaN:Mg层(19)、InGaN多量子阱(20)、GaN:Si层(21)、GaN缓冲层(22)、蓝宝石衬底(23)、N型电极(24)、限位弹簧(25)、安装座(26)、限位块(27)、安装隔板(28)和导热胶(29),其特征在于:所述封装体(9)的两侧通过固定座(4)安装有管脚(1),且管脚(1)的外侧包裹有防尘套(2),所述固定座(4)的内部通过螺栓安装有挡板(7),所述挡板(7)的顶部两侧通过螺栓安装有两个底板(5),所述底板(5)的一侧通过卡扣安装有紧固弹簧(6),且紧固弹簧(6)的一侧通过螺栓安装有固定卡块(8),所述封装体(9)的内部通过螺栓安装有保护套(10),所述保护套(10)的内部的上下两侧通过螺栓安装有四个限位弹簧(25),所述保护套(10)的内部的左右两侧通过螺栓安装有两个限位块(27),所述保护套(10)通过限位弹簧(25)和限位块(27)与安装座(26)连接,所述安装座(26)的底部通过螺栓安装有安装隔板(28),所述安装隔板(28)的顶部通过螺栓安装有二极管本体(17),且二极管本体(17)的外侧包裹有导热胶(29),所述二极管本体(17)的内部安装有P型电极(18),所述P型电极(18)的底部固定连接GaN:Mg层(19),所述GaN:Mg层(19)的底部固定连接InGaN多量子阱(20),所述InGaN多量子阱(20)的底部固定连接GaN:Si层(21),所述GaN:Si层(21)的顶部一侧固定连接N型电极(24),所述GaN:Si层(21)的底部固定连接GaN缓冲层(22),所述GaN缓冲层(22)的底部固定连接蓝宝石衬底(23)。
2.根据权利要求1所述的一种氮化镓发光二极管,其特征在于:所述封装体(9)的两侧开设有通孔,且通孔内填装有密封圈(3),且管脚(1)穿过封装体(9)和密封圈(3)与固定座(4)连接。
3.根据权利要求1所述的一种氮化镓发光二极管,其特征在于:所述保护套(10)由第一陶瓷层(11)、第一防静电层(12)、散热层(13)、防水层(14)、第二防静电层(15)和第二陶瓷层(16)组成,所述第一陶瓷层(11)的底部粘接有第一防静电层(12),所述第一防静电层(12)的底部涂有散热层(13),所述散热层(13)的底部粘接有防水层(14),所述防水层(14)的底部粘接有第二防静电层(15),所述第二防静电层(15)的底部粘接有第二陶瓷层(16)。
4.根据权利要求3所述的一种氮化镓发光二极管,其特征在于:所述散热层(13)为一种铜铁合金材料构件。
5.根据权利要求3所述的一种氮化镓发光二极管,其特征在于:所述防水层(14)由二苯基甲烷二异氰酸酯、聚酯多元醇、增塑剂、填料和溶剂油组成。
6.根据权利要求1的一种氮化镓发光二极管,其特征在于:所述管脚(1)通过电极引线与二极管本体(17)的P型电极(18)和N型电极(24)连接。
7.一种氮化镓发光二极管制备方法,包括如下步骤:步骤一,二极管本体(17)成型;步骤二,部件组装;步骤三,封装体(9)的安装;其特征在于:
其中在上述的步骤一中,使得蓝宝石衬底(23)的顶部一般先低温生长20nm-25nm的GaN缓冲层(22),然后在GaN缓冲层(22)的顶部生长3nm-5nm的GaN:Si层(21),在GaN:Si层(21)一侧的台面上淀积N型电极(24),然后在GaN:Si层(21)的顶部生长InGaN多量子阱(20),之后在InGaN多量子阱(20)的顶部生长0.5nm的GaN:Mg层(19),最后,在GaN:Mg层(19)一侧的台面上淀积P型电极(18);
其中在上述的步骤二中,在二极管本体(17)外侧套装有导热胶(29),将二极管本体(17)安装在安装座(26)的内部,再将保护套(10)通过限位弹簧(25)和限位块(27)套装在安装座(26)的外侧;
其中在上述的步骤三中,将管脚(1)通过固定座(4)与封装体(9)连接,将保护套(10)安装在封装体(9)的内部。
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