CN108595060B

CN108595060B - Touch sensing device

Info

Publication number: CN108595060B
Application number: CN201810392232.4A
Authority: CN
Inventors: 洪铭皓; 陈忠宏
Original assignee: AU Optronics Corp
Current assignee: AU Optronics Corp
Priority date: 2018-02-13
Filing date: 2018-04-27
Publication date: 2021-05-14
Anticipated expiration: 2038-04-27
Also published as: TWI651638B; CN108595060A; TW201935207A

Abstract

The invention provides a touch sensing device. The touch sensing device comprises a frequency generation circuit, a plurality of sensing electrodes and a capacitance circuit. The frequency generation circuit is arranged in the peripheral area of the substrate and used for providing a steady-state signal with a steady-state frequency in a steady-state period. The plurality of sensing electrodes are configured in the sensing region of the substrate and used for receiving touch sensing information. The capacitance circuit provides a steady-state capacitance value with the frequency generation circuit during steady-state. When one of the sensing electrodes receives touch sensing information during a steady state period, the steady state capacitance value generates an offset result, so that the frequency generation circuit provides a sensing signal with a sensing frequency according to the offset result during the sensing period.

Description

Touch sensing device

Technical Field

The present disclosure relates to sensing devices, and particularly to a touch sensing device.

Background

In recent years, with the development of display technology, a light and thin touch sensing device is gradually replacing a conventional physical button or physical switch to become an input medium for electronic components in various products. However, the touch sensing device may still have a design defect, and the touch sensing device in the product may need to be redesigned to meet the requirements of the public.

Disclosure of Invention

The touch sensing device of one embodiment of the invention is configured on the substrate. The touch sensing device comprises a frequency generation circuit, a plurality of sensing electrodes and a capacitance circuit. The frequency generation circuit is formed by connecting a plurality of stages of inverters in series and is arranged on the peripheral area of the substrate, and the frequency generation circuit provides a steady-state signal with a steady-state frequency in a steady-state period and transmits the steady-state signal to the control unit through an output end of the frequency generation circuit. The plurality of sensing electrodes correspond to the plurality of inverters and are arranged in the sensing region of the substrate, the plurality of sensing electrodes are respectively and electrically coupled to the plurality of output ends of the corresponding plurality of inverters so as to receive touch sensing information, and the peripheral region is positioned on at least one side of the sensing region. The capacitance circuit is electrically coupled between the plurality of sensing electrodes and the frequency generation circuit. The capacitance circuit provides a steady-state capacitance value with the frequency generation circuit during steady-state. When the plurality of sensing electrodes do not receive the touch sensing information during the steady state period, the frequency generation circuit provides a steady state signal to the control unit according to the steady state capacitance value of the capacitance circuit. When one of the sensing electrodes receives touch sensing information in a steady state period, the touch sensing information enters a sensing period, and a steady state capacitance value generates an offset result, so that the frequency generation circuit provides a sensing signal with a sensing frequency to the control unit according to the offset result in the sensing period.

The touch sensing device based on the above embodiment provides a steady-state signal with a steady-state frequency during a steady-state period through a frequency generation circuit formed by serially connecting a plurality of stages of inverters. When one of the sensing electrodes receives touch sensing information in a steady state period, the sensing period is entered, so that a steady state capacitance value provided by the capacitance circuit and the frequency generation circuit generates an offset result, and the frequency generation circuit provides a sensing signal with a sensing frequency according to the offset result in the sensing period. Therefore, the thickness of the touch sensing device can be greatly reduced, and the touch sensing device can be manufactured on a non-planar substrate or a special-shaped substrate.

Drawings

In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.

Fig. 1 is a schematic view illustrating a touch sensing device disposed on a substrate according to an embodiment of the invention.

Fig. 2 is a schematic diagram of a touch sensing device according to an embodiment of the invention.

Fig. 3A and 3B are schematic diagrams of a single inverter according to an embodiment of the invention.

Fig. 4 is a schematic diagram of a sensing timing sequence of a touch sensing device according to an embodiment of the invention.

Fig. 5 is a schematic view of a touch sensing device according to another embodiment of the invention.

Fig. 6 is a schematic diagram of a touch sensing device according to still another embodiment of the invention.

Description of reference numerals:

SUB: substrate

PA: peripheral zone

And SA: sensing region

100_1, 100_2, 200, 500, 600: touch sensing device

110. 210: frequency generating circuit

120 (1) to 120 (N), 220 (1) to 220 (N): sensing electrode

130. 230, 530, 630: capacitor circuit

CU: control unit

212_ (1) to 212_ (N), 312, 314: reverser

M1-M6: transistor with a metal gate electrode

VDD, VSS: system voltage

GND: reference voltage

232 (1) to 232 (N), 532 (1) to 532 (N): sensing capacitance

240: amplifier with a high-frequency amplifier

I _212_ (1) to I _212_ (N), I _312, I _ 314: input terminal

O _212_ (1) to O _212_ (N), O _312, O _ 314: output end

D _ M1-D _ M6: first terminal of transistor

S _ M1-S _ M6: second terminal of transistor

G _ M1-G _ M6: control terminal of transistor

T1_232_ (1) to T1_232_ (N), T1_532_ (1) to T1_532_ (N): first end of sensing capacitor

T1_534_ (1) to T1_534_ (N), T1_634_ (1) to T1_634_ (N): first terminal of resonant capacitor

T2_232_ (1) to T2_232_ (N), T2_532_ (1) to T2_532_ (N): sensing the second end of the capacitor

T2_534_ (1) to T2_534_ (N), T2_634_ (1) to T2_634_ (N): second terminal of resonant capacitor

Tst: during steady state

Tse: during sensing

fst: steady state frequency

Sst: steady state signal

fse: sensing frequency

Sse: sensing signal

Δ C: external capacitance value

Cst: steady state capacitance value

Cse: touch sensing capacitance value

C: capacitance value

V: value of voltage

f: frequency of

t: time of day

534_ (1) -534 _ (N), 634_ (1) -634 _ (N): resonance capacitor

Detailed Description

While the spirit of the disclosure will be described in detail in the drawings and specification, it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the disclosure, which is defined by the appended claims.

Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physically and/or electrically connected (or electrically coupled). Further, "electrically connected," "electrically coupled," or "coupled" may mean that there are additional elements between the elements, and may mean that two or more elements operate or act in conjunction with each other.

As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable range of deviation of the specified value as determined by one of ordinary skill in the art, taking into account the measurement in question and the specified amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%. Further, as used herein, "about", "approximately" or "substantially" may be selected based on optical properties, signal stability properties, or other properties to select a more acceptable range of deviation or standard deviation, and not all properties may be applied with one standard deviation.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

Referring to fig. 1, fig. 1 is a schematic view illustrating a touch sensing device disposed on a substrate according to an embodiment of the invention. In the embodiment of fig. 1, the substrate SUB has a peripheral region PA and a sensing region SA. The peripheral area PA is located on at least a portion (or at least one side) of the sensing area SA. In some embodiments, the peripheral region PA may surround the sensing region SA. In this embodiment, the type of the substrate SUB may include a non-planar substrate or a profiled substrate. For example, the substrate SUB may be a flexible substrate, a non-planar substrate or a curved substrate. In the present embodiment, the touch sensing devices 100_1 and 100_2 can be disposed on the substrate SUB. For example, the touch sensing device 100_1 includes a frequency generation circuit 110, sensing electrodes 120_ 1 to 120_ N, and a capacitance circuit 130. The frequency generation circuit 110 may be disposed in the peripheral region PA of the substrate SUB, and the frequency generation circuit 110 provides a steady-state signal (or a substantially steady-state signal) with a steady-state frequency (or a substantially steady-state frequency) during a steady-state period (or a substantially steady-state period) to be transmitted to the control unit CU via an output terminal of the frequency generation circuit 110. The sensing electrodes 120_ 1 to 120_ N are disposed in the sensing region SA of the substrate SUB to receive touch sensing information. The touch sensing information may be a capacitance change phenomenon generated by a user contacting the sensing electrodes 120_ 1 to 120_ N through a finger, a stylus, a touch glove, or other suitable medium. The capacitance circuit 130 may be disposed between the sensing electrodes 120_ (1) to 120_ (N) and the frequency generation circuit 110. For example, the capacitor circuit 130 may be disposed in at least one of the peripheral region PA and the sensing region SA on the substrate SUB. The capacitor circuit 130 may be electrically coupled between the sensing electrodes 120_ 1 to 120_ N and the frequency generation circuit 110. The capacitance circuit 130 provides a steady-state capacitance value (or substantially a steady-state capacitance value) with the frequency generation circuit during steady-state. The number of the touch sensing devices on the substrate may be one or more, and the invention is not limited to the number of the touch sensing devices in this embodiment.

In the present embodiment, when the sensing electrodes 120_ 1 to 120_ N do not receive the touch sensing information during the steady state (or substantially steady state), the frequency generation circuit 110 provides a steady state signal (or substantially steady state frequency) to the control unit CU according to the steady state capacitance value (or substantially steady state capacitance value) of the capacitance circuit 130, and enters the sensing period when one of the sensing electrodes 120_ 1 to 120_ N (e.g., the sensing electrode 120_ 1) receives the touch sensing information during the steady state (or substantially steady state). During the sensing period, the steady-state capacitance (or substantially the steady-state capacitance) is shifted, so that the frequency generation circuit 110 provides a sensing signal with a sensing frequency to the control unit CU according to the shifted result during the sensing period. The control unit CU is configured to receive a sensing frequency of the sensing signal to determine whether one of the sensing electrodes 120_ 1 to 120_ N receives the touch sensing information, and the control unit CU may provide an action or a function corresponding to the touch sensing information. In other embodiments, the sensing period is entered when a plurality of sensing electrodes (e.g., sensing electrodes 120_ 1, 120_ 2) of sensing electrodes 120_ 1 to 120_ N receive touch sensing information during a steady state period (or substantially a steady state period). The touch sensing device of the invention does not use the number of sensing electrodes receiving the touch sensing information as a necessary condition for entering the sensing period. The touch sensing apparatus of the present invention can enter the sensing period when one or more sensing electrodes receive the touch sensing information during the steady state (or substantially the steady state).

To further explain, referring to fig. 2, fig. 2 is a schematic diagram of a touch sensing device according to an embodiment of the invention. In the present embodiment, the frequency generation circuit 210 of the touch sensing device 200 is formed by serially connecting inverters 212_ (1) to 212_ (N). Wherein N is an odd number greater than or equal to 3. For example, the number of the inverters 212_ (1) to 212_ (N) in the present embodiment may be 3, 5, 7, and so on. For another example, in the frequency generating circuit 210, the output O _212_ 1 of the inverter 212_ 1 is coupled to the input I _212_ 2 of the inverter 212_ 2, the output O _212_ 2 of the inverter 212_ 2 is coupled to the input I _212_ 3 of the inverter 212_ 3, and so on. The output O _212_ (N) of the inverter 212_ (N) is coupled to the input I _212_ (1) of the inverter 212_ (1) and to the control unit CU.

Referring to fig. 3A, fig. 3A is a schematic diagram illustrating a single inverter according to an embodiment of the invention. The inverter 312 in the embodiment of fig. 3A may be applied to at least one inverter as described in the embodiment of fig. 2. The inverter 312 includes transistors M1, M2. The transistors M1 and M2 respectively have first terminals D _ M1-D _ M2, second terminals S _ M1-S _ M2, and control terminals G _ M1-G _ M2. The first terminal D _ M1 and the control terminal G _ M1 of the transistor M1 are electrically coupled to the system voltage VDD (or referred to as a first system voltage). The first terminal D _ M2 of the transistor M2 and the second terminal S _ M1 of the transistor M1 are electrically coupled to the output terminal O _312 of the inverter 312. The second terminal S _ M2 of the transistor M2 is electrically coupled to the reference voltage GND. The control terminal G _ M2 of the transistor M2 is electrically coupled to the input terminal I _312 of the inverter 312. Taking the inverter 212_ (1) of fig. 2 as an example and using the inverter 312 of fig. 3A, the input I _312 of the inverter 312 of fig. 3A may be equal to the input I _212(1) of the inverter 212_ (1) of fig. 2, the output O _312 of the inverter 312 of fig. 3A may be equal to the output O _212(1) of the inverter 212(1) of fig. 2, and the rest of the inverters of fig. 2, and so on if the inverter 312 structure of fig. 3A is used. In the present embodiment, the transistors M1 and M2 may be N-type thin film transistors. In other embodiments, the transistor inverter 312 may be implemented by a P-type thin film transistor. In yet another embodiment, one of the transistors M1 and M2 may be a P-type tft, and the other of the transistors M1 and M2 may be an N-type tft. In this embodiment, the system voltage VDD is, for example: a voltage of a high voltage level may be provided to the transistor M1, and the reference voltage GND is, for example: may be a low voltage level or a ground level.

In the embodiment of fig. 2 and 3A, the number of inverters 212_ (1) -212 _ (N) is an odd number greater than or equal to 3. Thus, for example, when the transistor M1 of the inverter 212_ 1 receives the system voltage VDD during the steady state and then outputs a steady-state signal (or substantially a steady-state signal) at a high voltage level to the input terminal I _212_ 2 of the inverter 212_ 2 through the output terminal O _212_ 1 of the inverter 212_ 1. The inverter 212_ 2 inverts the steady-state signal (or substantially steady-state signal) at the low voltage level, and so on. The input terminal I _212_ (N) of the inverter 212_ (N) receives the steady-state signal (or substantially steady-state signal) at the low voltage level to reversely output the steady-state signal (or substantially steady-state signal) at the high voltage level, and transmits the signal to the control unit CU via the output terminal of the frequency generating circuit 110. At the same time, the inverter 212_ (N) also transmits a steady-state signal (or substantially a steady-state signal) at the high voltage level to the input terminal I _212_ (1) of the inverter 212_ (1). Subsequently, the output terminal O _212_ 1 of the inverter 212_ 1 outputs a steady-state signal (or substantially a steady-state signal) at a low voltage level to the input terminal I _212_ 2 of the inverter 212_ 2, and so on. Thereby causing the frequency generation circuit 210 to generate a steady-state signal (or substantially steady-state signal) having a steady-state frequency (or substantially steady-state frequency) during steady-state (or substantially steady-state). Wherein the frequency value of the steady-state frequency (or substantially the steady-state frequency) depends on the parasitic capacitance of the frequency generation circuit and the capacitance value of the capacitance circuit 230. The capacitance circuit 230 and the frequency generation circuit 210 may together provide a set of steady-state capacitance values (or substantially steady-state capacitance values) to generate a steady-state signal (or substantially steady-state signal) corresponding to a steady-state frequency (or substantially steady-state frequency) of the steady-state capacitance values (or substantially steady-state capacitance values).

Referring to fig. 3B, fig. 3B is a schematic diagram of a single inverter according to a preferred embodiment of the present invention, and the inverter 314 in the present embodiment may be applied to at least one inverter described in the embodiment of fig. 2. The inverter 314 includes transistors M3-M6. The transistors M3-M6 have first terminals D _ M3-D _ M6, second terminals S _ M3-S _ M6, and control terminals G _ M3-G _ M6, respectively. The first terminal D _ M3 and the control terminal G _ M3 of the transistor M3 are electrically coupled to the system voltage VSS. The first terminal D _ M4 of the transistor M4 is electrically coupled to the second terminal S _ M3 of the transistor M3. The second terminal S _ M4 of the transistor M4 is electrically coupled to the reference voltage GND. The control terminal G _ M4 of the transistor M4 is electrically coupled to the input terminal I _314 of the inverter 314. The first terminal D _ M5 of the transistor M5 is electrically coupled to the system voltage VDD, and the control terminal G _ M5 of the transistor M5 is electrically coupled to the second terminal S _ M3 of the transistor M3 and the first terminal D _ M4 of the transistor M4. The first terminal D _ M6 of the transistor M6 and the second terminal S _ M5 of the transistor M5 are electrically coupled to the output O _314 of the inverter 314. The second terminal S _ M6 of the transistor M6 is electrically coupled to the reference voltage GND. The control terminal G _ M6 of the transistor M6 is electrically coupled to the input terminal I _314 of the inverter 314. Taking the inverter 212_ (1) of fig. 2 as an example and using the inverter 314 of fig. 3B, the input I _314 of the inverter 314 of fig. 3B may be equal to the input I _212(1) of the inverter 212_ (1) of fig. 2, the output O _314 of the inverter 312 of fig. 3B may be equal to the output O _212(1) of the inverter 212(1) of fig. 2, and the rest of the inverters of fig. 2, and so on if the inverter 314 structure of fig. 3B is used. The inverter 314 of the embodiment of fig. 3B also has the effect of suppressing noise compared to the embodiment of fig. 3A. In the present embodiment, the transistors M3 to M6 may be N-type thin film transistors. In other embodiments, the transistors M3-M6 may be implemented by P-type thin film transistors. In yet another embodiment, at least one of the transistors M1-M6 may be a P-type TFT, and at least another one of the transistors M1-M6 may be an N-type TFT. In the present embodiment, the system voltage VSS may provide a high voltage level to the transistor M3, and the system voltage VDD may provide a high voltage level to the transistor M5. The system voltages VSS and VDD (or referred to as the first and second system voltages) may have substantially the same voltage level or different voltage levels, and the reference voltage GND may be a low voltage level or a ground level, for example. In other embodiments, the inverter 314 may be applied to other numbers of transistors (including odd or even transistors) and/or other matched devices, which will not be described in further detail herein.

It should be noted that the manufacturing method of the frequency generating circuit 210 of the present invention can be applied to the thin film transistor process, so that the thickness of the frequency generator 210 is greatly reduced. In addition, the frequency generator 210 can be fabricated on a non-planar substrate or a shaped substrate. For example, the frequency generator 210 can be fabricated on a glass substrate, a plastic substrate, a flexible substrate, a non-planar substrate, or a curved substrate.

Referring to fig. 2 again, in the embodiment of fig. 2, the sensing electrodes 220_ 1 to 220_ N are electrically coupled to the inverters 212_ 1 to 212_ N in a coupling relationship, and the sensing electrodes 220_ 1 to 220_ N are electrically coupled to the inverters 212_ 1 to 212_ N, respectively. For example, the sensing electrode 220_ 1 is electrically coupled to the output O _212_ 1 of the inverter 212_ 1, the sensing electrode 220_ 2 is electrically coupled to the output O _212_ 2 of the inverter 212_ 2, and so on. Viewed from another aspect, the sensing electrode 220_ 1 is electrically coupled to the output O _212_ 1 of the inverter 212_ 1 and the input I _212_ 2 of the inverter 212_ 2, the sensing electrode 220_ 2 is electrically coupled to the output O _212_ 2 of the inverter 212_ 2 and the input I _212_ 3 of the inverter 212_ 3, and so on, the connection relationship between the sensing electrode 220_ N-1 and the corresponding inverters 212_ N-2 and 212_ 1 is similar, and the sensing electrode 220_ N is electrically coupled to the output O _212_ N of the inverter 212_ N, the input I _212_ 1 of the inverter 212_ 1 and the control unit CU.

The capacitance circuit 230 includes sensing capacitances 232_ (1) -232 _ (N) corresponding to the inverters 212_ (1) -212 _ (N) and the sensing electrodes 220_ (1) -220 _ (N). For example, the sensing capacitor 232_ 1 may be electrically coupled between the output O _212_ 1 of the inverter 212_ 1 and the sensing electrode 220_ 1, the sensing capacitor 232_ 2 may be electrically coupled between the output O _212_ 2 of the inverter 212_ 2 and the sensing electrode 220_ 2, and so on. Viewed from another aspect, one electrode (e.g., the first terminal T1_232_ 1) of the sensing capacitor 232_ 1 may be electrically coupled to the output terminal O _212_ 1 of the inverter 212_ 1 and the input terminal I _212_ 2 of the inverter 212_ 2, and the other electrode (e.g., the second terminal T2_232_ 1) of the sensing capacitor 232_ 1 may be electrically coupled to the sensing electrode 220_ 1; one electrode (e.g., the first terminal T1_232_ 2) of the sensing capacitor 232_ 2 may be electrically coupled to the output terminal O _212_ 2 of the inverter 212_ 2 and the input terminal I _212_ 3 of the inverter 212_ 3, and the other electrode (e.g., the second terminal T2_232_ 2) of the sensing capacitor 232_ 2 may be electrically coupled to the sensing electrode 220_ 2, and so on to the electrical coupling relationship between the two electrodes (e.g., the first terminal T1_232_ N-1 and the second terminal T2_232_ N-1) of the sensing capacitor 232_ 1 (N-1)) and the output terminal O _212_ N-1 of the inverter 212_ N, the input terminal I _212_ N (N) of the inverter 212_ 220_ 1) and the sensing electrode 220_ N-1; one electrode (e.g., the first terminal T1_232_ N) of the sensing capacitor 232_ N may be electrically coupled to the output terminal O _212_ N of the inverter 212_ N, the input terminal I _212_ 1 of the inverter 212_ 1 and the control unit CU, and the other electrode (e.g., the second terminal T2_232_ N) of the sensing capacitor 232_ N may be electrically coupled to the sensing electrode 220_ N. The sensing capacitors 232_ 1 to 232_ N are two electrodes sandwiching a dielectric layer (not shown). The capacitance design of the sensing capacitors 232_ (1) -232 _ (N) of the present embodiment can be used to adjust the offset result of the steady-state capacitance (or substantially the steady-state capacitance) during the sensing period. In the present embodiment, at least two of the number of inverters 212_ (1) to 212_ (N), the number of sensing electrodes 220_ (1) to 220_ (N), and the number of sensing capacitors 232_ (1) to 232_ (N) may be the same. In other embodiments, at least two of the number of inverters 212_ (1) -212 _ (N), the number of sensing electrodes 220_ (1) -220 _ (N), and the number of sensing capacitors 232_ (1) -232 _ (N) may be different.

In the present embodiment, the touch sensing device 200 may optionally further include an amplifier 240. An input terminal of the amplifier 240 is electrically coupled to the output terminal of the frequency generating circuit 210 and the capacitor circuit 230, and an output terminal of the amplifier 240 is electrically coupled to the control unit CU. The amplifier 240 may gain the steady-state signal (or substantially steady-state signal) during the steady-state (or substantially steady-state) and transmit the gain steady-state signal (or substantially steady-state signal) to the control unit CU via the output of the amplifier 240, and may gain the sensing signal during the sensing and transmit the gain sensing signal to the control unit CU via the output of the amplifier 240. The type of amplifier 240 may be a general type, such as: thin film transistors or other suitable types, and the number of transistors can be changed according to the requirement, and can also be used with other devices.

Please refer to fig. 2 and fig. 4, wherein fig. 4 is a schematic diagram of a sensing timing sequence of a touch sensing device according to an embodiment of the invention. In FIG. 4, the horizontal coordinate is time t (unit: seconds), and the vertical coordinate is a mixed coordinate including capacitance C (unit: picofarad, pF), voltage V (unit: volts), and frequency F (unit: kilohertz, kHz). In the embodiment of fig. 2 and 4, when the sensing electrodes 220_ (1) -220 _ (N) do not receive the touch sensing information during the steady-state period Tst, the frequency generation circuit 210 provides the steady-state signal Sst with the steady-state frequency fst to the control unit CU according to the steady-state capacitance Cst.

Next, when one of the sensing electrodes 220_ (1) to 220_ (N) receives the touch sensing information during the steady-state period Tst, the touch sensing apparatus 200 enters the sensing period Tse. For example, the touch sensing device 200 starts to enter the sensing period Tse when the user makes contact with at least one of the sensing electrodes 220_ (1) -220 _ (N) through, for example, a finger, a stylus, a touch glove, or other suitable medium. When a user approaches or touches at least one of the sensing electrodes 220_ (1) -220 _ (N) through a finger, a stylus, a touch glove, or other suitable medium, the touch sensing device 200 induces the external capacitance Δ C, such that the steady-state capacitance Cst of the touch sensing device 200 is shifted to generate a touch sensing capacitance Cse greater than the steady-state capacitance Cst. The touch sensing capacitance value Cse + Δ C is set to zero. The frequency generation circuit 210 generates a sensing signal Sse having a sensing frequency fse according to the touch sensing capacitance value Cse, wherein the sensing frequency fse is smaller than the steady-state frequency fst, and provides the sensing signal Sse having the sensing frequency fse to the control unit CU according to the sensing frequency fse. The control unit CU receives the sensing signal Sse and provides an action or function corresponding to the touch sensing information according to the sensing frequency fse. That is, the control unit CU may receive the sensing frequency fse smaller than the steady-state frequency fst to provide an action or function corresponding to the touch sensing information.

Referring to fig. 5, fig. 5 is a schematic view of a touch sensing device according to another embodiment of the invention. Unlike the embodiment of fig. 2, the capacitance circuit 530 includes sensing capacitances 532_ (1) -532 _ (N) and resonance capacitances 534_ (1) -534 _ (N) corresponding to the inverters 212_ (1) -212 _ (N) and the sensing electrodes 220_ (1) -220 _ (N). Preferably, the resonance capacitors 534_ (1) to 534_ (N) are connected in series with each other. In the present embodiment, the first terminals T1_534_ (1) -T1 _534_ (N) of the resonant capacitors 534_ (1) -534 _ (N) are electrically coupled to the output terminals O _212_ (1) -O _212_ (N) of the corresponding inverters 212_ (1) -212 _ (N), respectively, and the second terminals T2_534_ (1) -T2 _534_ (N) of the resonant capacitors are electrically coupled to the input terminals I _212_ (1) -I _212_ (N) of the corresponding inverters 212_ (1) -212 _ (N). The sensing capacitors 532_ 1 to 532_ N are electrically coupled between the output ends O _212_ 1 to O _212_ N of the corresponding inverters 212_ 1 to 212_ N and the sensing electrodes 220_ 1 to 220_ N, respectively. For example, the sensing capacitor 532_ 1 is electrically coupled between the output O _212_ 1 of the inverter 212_ 1 and the sensing electrode 220_ 1. The first terminal T1_534_ (1) of the resonant capacitor 534_ (1) is electrically coupled to the output O _212_ (1) of the inverter 212_ (1) and the sensing electrode 220_ (1), and the second terminal T2_534_ (1) of the resonant capacitor 534_ (1) is electrically coupled to the input I _212_ (1) of the inverter 212_ (1). The sensing capacitor 532_ 2 is electrically coupled between the output O _212_ 2 of the inverter 212_ 2 and the sensing electrode 220_ 2. The first terminal T1_534_ (2) of the resonant capacitor 534_ (2) is electrically coupled to the output O _212_ (2) of the inverter 212_ (2) and the sensing electrode 220_ (2), the second terminal T2_534_ (2) of the resonant capacitor 534_ (2) is electrically coupled to the input I _212_ (2) of the inverter 212_ (2), and so on. Viewed from another aspect, the first terminal T1_534_ (1) of the resonant capacitor 534_ (1) may be electrically coupled to the output terminal O _212_ (1) of the inverter 212_ (1), the input terminal I _212_ (2) of the inverter 212_ (2), the second terminal T2_534_ (1) of the resonant capacitor 534_ (1), and the first terminal T1_532_ (1) of the sensing capacitor 532_ (1), and the second terminal T2_534_ (1) of the resonant capacitor 534_ (1) may be electrically coupled to the input terminal I _212_ (1) of the inverter 212_ (1); the first terminal T1_534_ (2) of the resonant capacitor 534_ (2) may be electrically coupled to the output terminal O _212_ (2) of the inverter 212_ (2), the input terminal I _212_ (3) of the inverter 212_ (3), the second terminal T2_534_ (3) of the resonant capacitor 534_ (3), and the first terminal T1_532_ (2) of the sensing capacitor 532_ (2), and so on to the first terminal T1_534 (N-1) of the resonant capacitor 534_ (N-1), and so on to the output terminal O _212_ (N-1) of the inverter 212_ (N), the input terminal I _212_ (N) of the inverter 212_ (N), the second terminal T2_534 (N) of the resonant capacitor 534 (N), and the first terminal T1_ N-1) of the sensing capacitor 532 (N-1); the first terminal T1_534_ (N) of the resonant capacitor 534_ (N) may be electrically coupled to the output terminal O _212_ (N) of the inverter 212_ (N), the input terminal I _212_ (1) of the inverter 212_ (1), the first terminal T1_532_ (N) of the sensing capacitor 532_ (N), and the control unit CU. The resonant capacitors 534_ (1) to 534_ (N) are two electrodes with a dielectric layer (not shown) therebetween. In some embodiments, the amplifier 240 may be optionally included, and the first terminal T1_534_ (N) of the resonant capacitor 534_ (N) may be electrically coupled to the output terminal O _212_ (N) of the inverter 212_ (N), the input terminal I _212_ (1) of the inverter 212_ (1), the amplifier 240 (e.g., the input terminal) and the first terminal T1_532_ (N) of the sensing capacitor 532_ (N), and the first terminal T1_534_ (N) of the resonant capacitor 534_ (N) may be electrically coupled to the control unit CU through the amplifier 240. The capacitance design of the sensing capacitor resonant capacitors 534_ (1) -534 _ (N) of the present embodiment can be used to adjust the steady-state capacitance (or substantially steady-state capacitance) during the steady-state period (or substantially steady-state period).

Referring to fig. 6, fig. 6 is a schematic view of a touch sensing device according to still another embodiment of the invention. Unlike the embodiment of fig. 5, the capacitance circuit 630 includes only the resonant capacitances 634 (1) -634 (N) corresponding to the inverters 212(1) -212 (N) and the sense electrodes 220 (1) -220 (N). Preferably, the resonance capacitors 634_ (1) to 634_ (N) are connected in series with each other. For example, the first terminal T1_634_ (1) of the resonant capacitor 634_ (1) may be electrically coupled to the output O _212_ (1) of the inverter 212_ (1) and the sensing electrode 220_ (1), and the second terminal T2_634_ (1) of the resonant capacitor 634_ (1) may be electrically coupled to the input I _212_ (1) of the inverter 212_ (1). The sensing electrode 220_ 1 may be electrically coupled between the output O _212_ 1 of the inverter 212_ 1 and the input of the inverter 212_ 2. The first terminal T1_634_ (2) of resonant capacitor 634_ (2) may be electrically coupled to the output O _212_ (2) of inverter 212_ (2) and to sense electrode 220_ (2), the second terminal T2_634_ (2) of resonant capacitor 634_ (2) may be electrically coupled to the input I _212_ (2) of inverter 212_ (2), and so on. Viewed from another aspect, the first terminal T1_634_ (1) of the resonant capacitor 634_ (1) may be electrically coupled to the output terminal O _212_ (1) of the inverter 212_ (1), the input terminal I _212_ (2) of the inverter 212_ (2), the second terminal T2_634_ (2) of the resonant capacitor 634_ (2), and the sensing electrode 220_ (1), and the second terminal T2_634_ (1) of the resonant capacitor 634_ (1) may be electrically coupled to the input terminal I _212_ (1) of the inverter 212_ (1); the first terminal T1_634_ (2) of the resonant capacitor 634_ (2) may be electrically coupled to the output terminal O _212_ (2) of the inverter 212_ (2), the input terminal I _212_ (3) of the inverter 212_ (3), the second terminal T2_634_ (3) of the resonant capacitor 634_ (3) and the sensing electrode 220_ (2), and so on to the first terminal T1_634_ (N-1) of the resonant capacitor 634_ (N-1) may be electrically coupled to the output terminal O _212_ (N-1) of the inverter 212_ (N), the input terminal I _212_ (N) of the inverter 212_ (N), the second terminal T2_634_ (N) of the resonant capacitor 634_ (N) and the sensing electrode 220_ (N-1); the first end T1_634_ (N) of the resonant capacitor 634_ (N) may be electrically coupled to the output O _212_ (N) of the inverter 212_ (N), the input I _212_ (1) of the inverter 212_ (1), the sensing electrode 220_ (N), and the control unit CU. In some embodiments, the amplifier 240 may be optionally included, and the first end T1_634 (N-1) of the resonant capacitor 634_ (N) may be electrically coupled to the output O _212_ (N) of the inverter 212_ (N), the input I _212_ (1) of the inverter 212_ (1), the amplifier 240 (e.g., the input) and the sensing electrode 220_ (N), and the first end T1_634_ (N) of the resonant capacitor 634_ (N) may be electrically coupled to the control unit CU through the amplifier 240.

In the foregoing embodiments, the type of the transistor may be a commonly used transistor, such as: a bottom gate type transistor, a top gate type transistor, or other suitable transistor. The semiconductor layer of the transistor may have a single-layer or multi-layer structure, and the material thereof includes amorphous silicon, nanocrystalline silicon, microcrystalline silicon, polycrystalline silicon, single crystal silicon, an oxide semiconductor material, an organic semiconductor material, carbon nanotubes, or other suitable semiconductor materials. In the foregoing embodiments, the dielectric layer may be a single layer or a multi-layer structure, and the material thereof includes inorganic material, organic material, or other suitable material, or a combination of the foregoing.

Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, and various changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the invention.

Claims

1. A touch sensing device disposed on a substrate, comprising:

a frequency generating circuit, which is formed by connecting a plurality of stages of inverters in series and is configured in a peripheral area of the substrate, and the frequency generating circuit provides a steady-state signal with a steady-state frequency in a steady-state period and transmits the steady-state signal to a control unit through an output end of the frequency generating circuit;

a plurality of sensing electrodes corresponding to the multi-stage inverters and configured in a sensing region of the substrate, wherein the sensing electrodes are respectively and electrically coupled to a plurality of output ends of the corresponding multi-stage inverters to receive touch sensing information, and the peripheral region is located on at least one side of the sensing region; and

a capacitance circuit electrically coupled between the plurality of sensing electrodes and the frequency generation circuit, and providing a steady-state capacitance value together with the frequency generation circuit during the steady-state period,

when one of the sensing electrodes does not receive the touch sensing information in the steady state period, the frequency generation circuit provides the steady state signal to the control unit according to the steady state capacitance value of the capacitance circuit, and when one of the sensing electrodes receives the touch sensing information in the steady state period, the frequency generation circuit enters a sensing period, the steady state capacitance value generates an offset result, and the frequency generation circuit provides a sensing signal with a sensing frequency to the control unit according to the offset result in the sensing period.

2. The touch sensing device of claim 1, wherein the number of the plurality of inverters is an odd number greater than or equal to 3, wherein the output terminal of a last inverter of the plurality of inverters is coupled to an input terminal of a first inverter of the plurality of inverters and the control unit.

3. The touch sensing device of claim 1, wherein the capacitor circuit comprises a plurality of sensing capacitors corresponding to the multi-stage inverters and the sensing electrodes, and the sensing capacitors are electrically coupled between the output terminals of the corresponding multi-stage inverters and the sensing electrodes, respectively.

4. The touch sensing device of claim 1, wherein the capacitor circuit comprises a plurality of resonant capacitors corresponding to the multi-stage inverters and the sensing electrodes, each resonant capacitor having a first end and a second end, the first ends of the resonant capacitors being electrically coupled to the output ends of the corresponding multi-stage inverters and the sensing electrodes, respectively, and the second ends of the resonant capacitors being electrically coupled to the input ends of the corresponding multi-stage inverters.

5. The touch sensing device of claim 1, wherein the capacitor circuit comprises a plurality of sensing capacitors corresponding to the multi-stage inverters and the sensing electrodes, and a plurality of resonant capacitors, each resonant capacitor having a first end and a second end, the first ends of the resonant capacitors being electrically coupled to the output ends of the corresponding multi-stage inverter, the second ends of the resonant capacitors being electrically coupled to the input ends of the corresponding multi-stage inverter, the sensing capacitors being electrically coupled between the output ends of the corresponding multi-stage inverter and the sensing electrodes.

6. The touch sensing device of claim 4 or 5, wherein the plurality of resonant capacitors are connected in series.

7. The touch sensing device of claim 1, wherein a capacitive circuit is disposed in at least one of the sensing region and the peripheral region on the substrate.

8. The touch sensing device of claim 1, wherein the touch sensing device further comprises:

an amplifier, an input terminal of the amplifier being electrically coupled to the output terminal of the frequency generating circuit and the capacitor circuit, an output terminal of the amplifier being electrically coupled to the control unit to gain the steady-state signal during the steady-state and transmit the gain steady-state signal to the control unit via the output terminal of the amplifier, and to gain the sensing signal during the sensing and transmit the gain sensing signal to the control unit via the output terminal of the amplifier.

9. The touch sensing device of claim 1, wherein each of the inverters comprises:

a first transistor having a first terminal, a second terminal, and a control terminal, wherein the first terminal and the control terminal of the first transistor are electrically coupled to a first system voltage; and

a second transistor having a first terminal, a second terminal and a control terminal, wherein the first terminal of the second transistor and the second terminal of the first transistor are electrically coupled to an output terminal of the inverter, the second terminal of the second transistor is electrically coupled to a reference voltage, and the control terminal of the second transistor is electrically coupled to an input terminal of the inverter.

10. The touch sensing device of claim 1, wherein each of the inverters comprises:

a first transistor having a first terminal, a second terminal, and a control terminal, wherein the first terminal and the control terminal of the first transistor are electrically coupled to a first system voltage;

a second transistor having a first terminal, a second terminal and a control terminal, wherein the first terminal of the second transistor is electrically coupled to the second terminal of the first transistor, the second terminal of the second transistor is electrically coupled to a reference voltage, and the control terminal of the second transistor is electrically coupled to an input terminal of the inverter;

a third transistor having a first terminal, a second terminal, and a control terminal, wherein the first terminal of the third transistor is electrically coupled to a second system voltage, and the control terminal of the third transistor is electrically coupled to the second terminal of the first transistor and the first terminal of the second transistor; and

a fourth transistor having a first terminal, a second terminal and a control terminal, wherein the first terminal of the fourth transistor and the second terminal of the third transistor are electrically coupled to an output terminal of the inverter, the second terminal of the fourth transistor is electrically coupled to the reference voltage, and the control terminal of the fourth transistor is electrically coupled to the input terminal of the inverter.

11. The touch sensing device of claim 1, wherein the peripheral region surrounds at least a portion of the sensing region.

12. The touch sensing device of claim 1, wherein the sensing electrode enters the sensing period when receiving the touch sensing information during the steady-state period, the steady-state capacitance value shifts to generate a touch sensing capacitance value larger than the steady-state capacitance value, the frequency generation circuit generates the sensing frequency according to the touch sensing capacitance value, and provides the sensing signal with the sensing frequency to the control unit according to the sensing frequency, wherein the sensing frequency is smaller than the steady-state frequency.

13. The touch sensing device of claim 1, wherein the substrate comprises a non-planar substrate or a shaped substrate.