CN108595060A - Touch sensing device - Google Patents

Touch sensing device Download PDF

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Publication number
CN108595060A
CN108595060A CN201810392232.4A CN201810392232A CN108595060A CN 108595060 A CN108595060 A CN 108595060A CN 201810392232 A CN201810392232 A CN 201810392232A CN 108595060 A CN108595060 A CN 108595060A
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CN
China
Prior art keywords
reverser
sensing
transistor
electrically coupled
capacitance
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CN201810392232.4A
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CN108595060B (en
Inventor
洪铭皓
陈忠宏
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AU Optronics Corp
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AU Optronics Corp
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416Control or interface arrangements specially adapted for digitisers

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)

Abstract

The invention provides a touch sensing device. The touch sensing device comprises a frequency generation circuit, a plurality of sensing electrodes and a capacitance circuit. The frequency generation circuit is arranged in the peripheral area of the substrate and used for providing a steady-state signal with a steady-state frequency in a steady-state period. The plurality of sensing electrodes are configured in the sensing region of the substrate and used for receiving touch sensing information. The capacitance circuit provides a steady-state capacitance value with the frequency generation circuit during steady-state. When one of the sensing electrodes receives touch sensing information during a steady state period, the steady state capacitance value generates an offset result, so that the frequency generation circuit provides a sensing signal with a sensing frequency according to the offset result during the sensing period.

Description

Touch sensing device
Technical field
The present invention relates to a kind of sensing device further, more particularly to a kind of touch sensing device.
Background technology
In recent years, with the evolution of display technology, frivolous touch sensing device start gradually instead of traditional entity by Button or physical switches and as the input medium of electronic component in various products.But touch sensing device may still have design On defect, it may be necessary to the touch sensing device in product is redesigned, to meet public demand.
Invention content
The touch sensing device of one of the embodiment of the present invention is configured on substrate.Touch sensing device includes that frequency generates electricity Road, multiple sensing electrodes and condenser network.Frequency generating circuit is connected in series by multistage reverser, is configured at substrate Peripheral region, and frequency generating circuit provides the steady-state signal with steady frequency via the defeated of frequency generating circuit during stable state Outlet is transferred to control unit.Multiple sensing electrodes correspond to multiple reversers, are configured at the sensing area of substrate, multiple sensing electricity Pole is electrically coupled to multiple output ends of corresponding multiple reversers respectively, and to receive touch-control sensing information, and peripheral region is located at Sensing area at least side.Condenser network is electrically coupled between multiple sensing electrodes and frequency generating circuit.Condenser network is in stable state Period provides stable state capacitance together with frequency generating circuit.When multiple sensing electrodes do not receive touch-control sensing during stable state When information, frequency generating circuit provides steady-state signal to control unit according to the stable state capacitance of condenser network.When multiple sensings During the one of which of electrode enters sensing when receiving touch-control sensing information between steady state period, stable state capacitance shifts knot Fruit makes frequency generating circuit provide the sensing signal with sensing frequency to control unit according to migration result during sensing.
The frequency generating circuit being connected in series via multistage reverser based on the touch sensing device of above-described embodiment Steady-state signal with steady frequency is provided during stable state.When multiple sensing electrode one of which received between steady state period it is tactile During entering sensing when controlling sensitive information, condenser network is made to shift with frequency generating circuit stable state capacitance provided together As a result, frequency generating circuit is made to provide the sensing signal with sensing frequency according to migration result during sensing.Thus, The thickness of touch sensing device can be greatly decreased, and can be made on non-planar substrate or special-shaped substrate.
Description of the drawings
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and it is detailed to coordinate attached drawing to make Carefully it is described as follows.
Fig. 1 is the schematic diagram that the touch sensing device according to the present invention depicted in an embodiment is set on substrate.
Fig. 2 is the schematic diagram of the touch sensing device depicted in an embodiment according to the present invention.
Fig. 3 A and Fig. 3 B are the schematic diagrames for the single reverser that an embodiment is painted respectively according to the present invention.
Fig. 4 is the sensing time diagram of the touch sensing device depicted in an embodiment according to the present invention.
Fig. 5 is the schematic diagram of the touch sensing device depicted in another embodiment according to the present invention.
Fig. 6 is the schematic diagram of the touch sensing device depicted in another embodiment according to the present invention.
Reference sign:
SUB:Substrate
PA:Peripheral region
SA:Sensing area
100_1、100_2、200、500、600:Touch sensing device
110、210:Frequency generating circuit
120_ (1)~120_ (N), 220_ (1)~220_ (N):Sensing electrode
130、230、530、630:Condenser network
CU:Control unit
212_ (1)~212_ (N), 312,314:Reverser
M1~M6:Transistor
VDD、VSS:System voltage
GND:Reference voltage
232_ (1)~232_ (N), 532_ (1)~532_ (N):Sense capacitance
240:Amplifier
I_212_ (1)~I_212_ (N), I_312, I_314:Input terminal
O_212_ (1)~O_212_ (N), O_312, O_314:Output end
D_M1~D_M6:The first end of transistor
S_M1~S_M6:The second end of transistor
G_M1~G_M6:The control terminal of transistor
T1_232_ (1)~T1_232_ (N), T1_532_ (1)~T1_532_ (N):The first end of sense capacitance
T1_534_ (1)~T1_534_ (N), T1_634_ (1)~T1_634_ (N):The first end of resonant capacitance
T2_232_ (1)~T2_232_ (N), T2_532_ (1)~T2_532_ (N):The second end of sense capacitance
T2_534_ (1)~T2_534_ (N), T2_634_ (1)~T2_634_ (N):The second end of resonant capacitance
Tst:During stable state
Tse:During sensing
fst:Steady frequency
Sst:Steady-state signal
fse:Sensing frequency
Sse:Sensing signal
ΔC:External electrical capacitance
Cst:Stable state capacitance
Cse:Touch-control sensing capacitance
C:Capacitance
V:Voltage value
f:Frequency
t:Time
534_ (1)~534_ (N), 634_ (1)~634_ (N):Resonant capacitance
Specific implementation mode
It will clearly illustrate the spirit of content disclosed herein, any technical field with attached drawing and in detail narration below Middle those of ordinary skill is after the embodiment for understanding this disclosure, the technology that should can be taught by this mandate disclosure, It is changed and changes, without departing from the spirit and scope of present application disclosure.
Throughout the specification, identical reference numeral indicates identical element.It should be appreciated that ought such as layer, film, region Or the element of substrate is referred to as at another element "upper" or " being connected to " another element, can directly on another element or It is connect with another element or intermediary element can be there is also.On the contrary, be referred to as " directly on another element " when element or When " being directly connected to " another element, intermediary element is not present.As it is used herein, " connection " can refer to physics and/or electricity Property connection (or electric property coupling).Furthermore " electric connection ", " electric property coupling " or " coupling " system can there are other members between two element Part also can refer to two or multiple element mutual operation or action.
" about " used herein, " approximation " or " substantial " includes described value and is determined in those of ordinary skill in the art Particular value acceptable deviation range in average value, it is contemplated that the measurement that is discussed and with the spy that measures relevant error Fixed number amount (that is, limitation of measuring system).For example, " about " can indicate in one or more standard deviations of described value, or ± 30%, in ± 20%, ± 10%, ± 5%.Furthermore " about " used herein, " approximation " or " substantial " can be according to optical Matter, signal stabilization property or other properties to select more acceptable deviation range or standard deviation, and can not have to a standard Deviation is applicable in whole properties.
Unless otherwise defined, all terms (including technical and scientific term) used herein have and are led with belonging to the present invention The normally understood identical meaning of those of ordinary skill in domain.It will be further appreciated that such as in usually used dictionary Those of definition term should be interpreted as having consistent with their meanings in the relevant technologies and context of the invention Meaning, and will not be interpreted Utopian or excessively formal meaning, unless clearly definition so herein.
Referring to FIG. 1, Fig. 1, which is touch sensing device according to the present invention depicted in an embodiment, is set to showing on substrate It is intended to.In the embodiment in figure 1, substrate SUB has peripheral region PA and sensing area SA.Peripheral region PA is located at sensing area SA at least A part of (or be at least side).In part embodiment, peripheral region PA can be surrounded on sensing area SA.In the present embodiment, The type of substrate SUB may include non-planar substrate or special-shaped substrate.For example, substrate SUB can be flexible substrate, it is non-flat Face substrate or curved substrate.In the present embodiment, touch sensing device 100_1,100_2 may be disposed at SUB on substrate.Citing comes It says, touch sensing device 100_1 includes frequency generating circuit 110, sensing electrode 120_ (1)~120_ (N) and condenser network 130.Frequency generating circuit 110 is configured in the peripheral region PA of substrate SUB, and frequency generating circuit 110 is (or real during stable state In matter during stable state) provide with steady frequency (either substantial steady frequency) steady-state signal (or substantially stable state letter Number) via the output end of frequency generating circuit 110 it is transferred to control unit CU.Sensing electrode 120_ (1)~120_ (N) is configured at The sensing area SA of substrate SUB is to receive touch-control sensing information.Touch-control sensing information can penetrate such as finger, touch-control with user Pen, touch glove or other suitable media contacted with sensing electrode 120_ (1)~120_ (N) caused by capacitance change Become phenomenon.Condenser network 130 is configured in sensing electrode 120_ (1)~between 120_ (N) and frequency generating circuit 110.Citing For, condenser network 130 is configured at least one of peripheral region PA and sensing area SA on substrate SUB.Capacitance electricity Road 130 can be electrically coupled to sensing electrode 120_ (1)~between 120_ (N) and frequency generating circuit 110.Condenser network 130 exists Stable state capacitance (or substantially stable state capacitance) is provided during stable state together with frequency generating circuit.The present invention is on substrate The quantity of touch sensing device can be one or more, the present invention is not with the quantity of the touch sensing device of the present embodiment It is limited.
In the present embodiment, as sensing electrode 120_ (1)~120_ (N) during stable state (or substantially during stable state) When not receiving touch-control sensing information, frequency generating circuit 110 according to condenser network 130 stable state capacitance (or substantially Stable state capacitance) steady-state signal (or substantial steady frequency) is provided to control unit CU, and work as sensing electrode 120_ (1) One of~120_ (N) sensing electrodes (such as sensing electrode 120_ (1)) (or substantial steady state period during stable state Between) when receiving touch-control sensing information, into during sensing.During sensing, stable state capacitance (or substantially stable state capacitance Value) it can shift as a result, making frequency generating circuit 110 can be according to migration result to provide with sensing frequency during sensing Sensing signal to control unit CU.Control unit CU is to receive the sensing frequency of sensing signal, to judge sensing electrode Whether one of 120_ (1)~120_ (N) receives touch-control sensing information, and control unit CU can be provided corresponding to tactile Control action or the function of sensitive information.In other embodiments, when multiple sensings of sensing electrode 120_ (1)~120_ (N) electricity During stable state (or substantially during stable state) receives touch-control sensing letter for pole (such as sensing electrode 120_ (1), 120_ (2)) When breath, into during sensing.The touch sensing device of the present invention is not to receive the number of the sensing electrode of touch-control sensing information Amount is the necessary condition during entering sensing.The touch sensing device of the present invention can be when one or more sensing electrodes are in stable state Period (or substantially during stable state) receives touch-control sensing information, into during sensing.
It further illustrates, referring to FIG. 2, Fig. 2 is the touch sensing device depicted in an embodiment according to the present invention Schematic diagram.In the present embodiment, the frequency generating circuit 210 of touch sensing device 200 is by reverser 212_ (1)~212_ (N) It is connected in series.Wherein N is greater than or equal to 3 odd number.For example, the reverser 212_ (1) of the present embodiment~ The quantity of 212_ (N) can be 3,5,7 etc..Separately for example, in frequency generating circuit 210, reverser 212_ (1) output end O_212_ (1) is coupled to the input terminal I_212_ (2) of reverser 212_ (2), the output of reverser 212_ (2) End O_212_ (2) is coupled to the input terminal I_212_ (3) of reverser 212_ (3), and so on.The output of reverser 212_ (N) End O_212_ (N) is then coupled to the input terminal I_212_ (1) and control unit CU of reverser 212_ (1).
Please refer to Fig.3 A, Fig. 3 A are the schematic diagrames of the single reverser depicted in an embodiment according to the present invention.Fig. 3 A's Reverser 312 in embodiment is applicable at least one reverser described in the embodiment of Fig. 2.Reverser 312 includes crystal Pipe M1, M2.Transistor M1, M2 be respectively provided with first end D_M1~D_M2, second end S_M1~S_M2 and control terminal G_M1~ G_M2.The first end D_M1 and control terminal G_M1 of transistor M1 be electrically coupled to system voltage VDD (or for the first system electricity Pressure).The second end S_M1 of the first end D_M2 and transistor M1 of transistor M2 are electrically coupled to the output end of reverser 312 jointly O_312.The second end S_M2 of transistor M2 is electrically coupled to reference voltage GND.The control terminal G_M2 electric property couplings of transistor M2 To the input terminal I_312 of reverser 312.Wherein, it is example with the reverser 212_ (1) of Fig. 2 and uses the reverser of Fig. 3 A 312, then the input terminal I_312 of the reverser 312 of Fig. 3 A can be equal to the input terminal I_212 (1) of the reverser 212_ (1) of Fig. 2, The output end O_312 of the reverser 312 of Fig. 3 A can be equal to the output end O_212 (1) of the reverser 212_ (1) of Fig. 2, remaining The reverser of Fig. 2, if using 312 structure of reverser of Fig. 3 A with regard to the rest may be inferred.In the present embodiment, transistor M1, M2 can be with It is N-type TFT.And in other embodiments, transistor reverser 312 can also be realized by P-type TFT. In yet other embodiment, one of them can be P-type TFT by transistor M1, M2, and transistor M1, M2 are wherein another A is N-type TFT.In the present embodiment, system voltage VDD is for example:The voltage of high-voltage level can be provided to crystal Pipe M1, and reference voltage GND is for example:Can be low voltage level or earth level.
In the embodiment of Fig. 2 and Fig. 3 A, the quantity of reverser 212_ (1)~212_ (N) be greater than or equal to 3 it is strange Number.So that it takes up a position, for example, through anti-after the transistor M1 of reverser 212_ (1) receives system voltage VDD between steady state period To device 212_ (1) output end O_212_ (1) output HIGH voltage level when steady-state signal (or substantial steady-state signal) arrive The input terminal I_212_ (2) of reverser 212_ (2).Reverser 212_ (2) reversely output low voltage level when steady-state signal (or The substantial steady-state signal of person), and so on.The input terminal I_212_ (N) of reverser 212_ (N) then can be because of receiving low-voltage When the steady-state signal (either substantial steady-state signal) of level is with reversed output HIGH voltage level steady-state signal (or substantially Steady-state signal), and it is transferred to control unit CU via the output end of frequency generating circuit 110.At the same time, reverser 212_ (N) steady-state signal (or substantial steady-state signal) when also can be by high-voltage level is transmitted to the input of (1) reverser 212_ Hold I_212_ (1).Then, reverser 212_ (1) output end O_212_ (1) output low voltage level when steady-state signal (or The substantial steady-state signal of person) to the input terminal I_212_ (2) of reverser 212_ (2), it recycles according to this.To make frequency generate Circuit 210 generates steady with steady frequency (or substantial steady frequency) during stable state (either substantially during stable state) State signal (or substantial steady-state signal).Wherein, the frequency values of steady frequency (or substantial steady frequency) depend on frequency The parasitic capacitance of rate generation circuit and the capacitance of condenser network 230.Condenser network 230 and frequency generating circuit 210 can one It rises and one group of stable state capacitance (either substantially stable state capacitance) is provided to correspond to stable state capacitance (or substantially steady to generate State capacitance) steady frequency (either substantial steady frequency) steady-state signal (or substantial steady-state signal).
B is please referred to Fig.3, Fig. 3 B are the schematic diagrames of the single reverser depicted in a preferred embodiment according to the present invention, Reverser 314 in the present embodiment is applicable at least one reverser described in the embodiment of Fig. 2.Reverser 314 includes crystalline substance Body pipe M3~M6.Transistor M3~M6 is respectively provided with first end D_M3~D_M6, second end S_M3~S_M6 and control terminal G_ M3~G_M6.The first end D_M3 and control terminal G_M3 of transistor M3 is electrically coupled to system voltage VSS.The first of transistor M4 End D_M4 is electrically coupled to the second end S_M3 of transistor M3.The second end S_M4 of transistor M4 is electrically coupled to reference voltage GND.The control terminal G_M4 of transistor M4 is electrically coupled to the input terminal I_314 of reverser 314.The first end D_M5 of transistor M5 Be electrically coupled to system voltage VDD, the control terminal G_M5 of transistor M5 be electrically coupled to transistor M3 second end S_M3 and The first end D_M4 of transistor M4.The second end S_M5 of the first end D_M6 and transistor M5 of transistor M6 are electrically coupled to reversely The output end O_314 of device 314.The second end S_M6 of transistor M6 is electrically coupled to reference voltage GND.The control terminal of transistor M6 G_M6 is electrically coupled to the input terminal I_314 of reverser 314.Wherein, it is example with the reverser 212_ (1) of Fig. 2 and uses figure The reverser 314 of 3B, then the input terminal I_314 of the reverser 314 of Fig. 3 B can be equal to the input of the reverser 212_ (1) of Fig. 2 Hold I_212 (1), the output end O_314 of the reverser 312 of Fig. 3 B that can be equal to the output end O_ of the reverser 212_ (1) of Fig. 2 212 (1), the reverser of remaining Fig. 2, if using 314 structure of reverser of Fig. 3 B with regard to the rest may be inferred.Compared to the implementation of Fig. 3 A Example, the effect also with noise suppression of reverser 314 of the embodiment of Fig. 3 B.In the present embodiment, transistor M3~M6 can be with It is N-type TFT.And in other embodiments, transistor M3~M6 can also be realized by P-type TFT.In again In one other embodiments, transistor M1~M6 wherein at least one can be P-type TFT, and transistor M1~M6 is wherein extremely Another can be N-type TFT less.In the present embodiment, system voltage VSS can provide high-voltage level to transistor M3, System voltage VDD can provide high-voltage level to transistor M5.System voltage VSS, VDD (or be the first, second system electricity Pressure) can be for example with substantially the same voltage level, or there is different voltage level, and reference voltage GND for example may be used It is low voltage level or earth level.In other embodiments, reverser 314 is also applicable to the transistor of other numbers (transistor comprising odd number or even number) and/or the element of other cooperations, in this no longer superfluous words.
Herein it is noted that the production method of the frequency generating circuit 210 of the present invention can be covered for film crystal Plumber's skill, therefore the thickness of frequency generator 210 is greatly decreased.In addition, frequency generator 210 can be made in non-planar substrate Or on special-shaped substrate.For example, frequency generator 210 can be made in glass substrate, plastic substrate, flexible substrate, non- On planar substrates or curved substrate.
Fig. 2 is refer again to, in the embodiment of fig. 2, sensing electrode 220_ (1)~220_ (N) and reverser 212_ (1)~ For 212_ (N) in coupling relationship, sensing electrode 220_ (1)~220_ (N) corresponds respectively to reverser 212_ (1)~212_ (N) Carry out electric property coupling.For example, sensing electrode 220_ (1) is electrically coupled to the output end O_212_ of reverser 212_ (1) (1), and sensing electrode 220_ (2) is electrically coupled to the output end O_212_ (2) of reverser 212_ (2), and so on.From another From the aspect of, sensing electrode 220_ (1) is electrically coupled to the output end O_212_ (1) and reverser 212_ (2) of reverser 212_ (1) Input terminal I_212_ (2), sensing electrode 220_ (2) be electrically coupled to the output end O_212_ (2) of reverser 212_ (2) with it is anti- It, can the rest may be inferred sensing electrode 220_ (N-1) and corresponding reverser 212_ (N- to the input terminal I_212_ (3) of device 212_ (3) 2) with the connection relation of reverser _ (N-1), and sensing electrode 220_ (N) is electrically coupled to the output end O_ of reverser 212_ (N) The input terminal I_212_ (1) and control unit CU of 212_ (N), reverser 212_ (1).
Condenser network 230 includes corresponding to reverser 212_ (1)~212_ (N) and sensing electrode 220_ (1)~220_ (N) sense capacitance 232_ (1)~232_ (N).For example, sense capacitance 232_ (1) can be electrically coupled to reverser 212_ (1) between output end O_212_ (1) and sensing electrode 220_ (1), sense capacitance 232_ (2) can be electrically coupled to reverser It, can the rest may be inferred between the output end O_212_ (2) and sensing electrode 220_ (2) of 212_ (2).On the other hand, sensing electricity The output end O_212_ of reverser 212_ (1) can be electrically coupled to by holding an electrode (such as first end T1_232_ (1)) of 232_ (1) (1) with the input terminal I_212_ of reverser 212_ (2) (2), and another electrode (such as second end T2_ of sense capacitance 232_ (1) 232_ (1)) sensing electrode 220_ (1) can be electrically coupled to;An electrode (such as first end T1_232_ of sense capacitance 232_ (2) (2)) the input terminal I_212_ of the output end O_212_ (2) and reverser 212_ (3) of reverser 212_ (2) can be electrically coupled to (3), and another electrode of sense capacitance 232_ (2) (such as second end T2_232_ (2)) can be electrically coupled to sensing electrode 220_ (2), can the rest may be inferred to sense capacitance 232_ (N-1) two electrodes (such as first end T1_232_ (N-1) and second end T2_232_ (N-1)) with the output end O_212_ of reverser 212_ (N-1) (N-1), reverser 212_ (N) input terminal I_212_ (N) with sense Survey the electric property coupling relationship of electrode 220_ (N-1);And an electrode (such as first end T1_232_ (N)) of sense capacitance 232_ (N) can It is electrically coupled to input terminal I_212_ (1) and the control of the output end O_212_ (N), reverser 212_ (1) of reverser 212_ (N) Unit CU, and another electrode (such as second end T2_232_ (N)) of sense capacitance 232_ (N) can be electrically coupled to sensing electrode 220_(N).Wherein, sense capacitance 232_ (1)~232_ (N) is two electrode sandwiched dielectric layer (not shown).The sense of the present embodiment The capacitance design for surveying capacitance 232_ (1)~232_ (N) can be used to adjust stable state capacitance during sensing (or substantially Stable state capacitance) migration result.In the present embodiment, reverser 212_ (1)~quantity of 212_ (N), sensing electrode 220_ (1) quantity of quantity and sense capacitance 232_ (1)~232_ (N) of~220_ (N) wherein at least the two can be identical. In other embodiments, the quantity of the quantity of reverser 212_ (1)~212_ (N), sensing electrode 220_ (1)~220_ (N) with And the quantity of sense capacitance 232_ (1)~232_ (N) wherein at least the two can be different.
In the present embodiment, touch sensing device 200 further includes optionally amplifier 240.The input of amplifier 240 End is electrically coupled to the output end and condenser network 230 of frequency generating circuit 210, the output end electric property coupling of amplifier 240 To control unit CU.Amplifier 240 during stable state (either substantially stable state during) can gain steady-state signal (or substantially Steady-state signal) and via the steady-state signal (or substantial steady-state signal) of the output end of amplifier 240 transmission gain to control Unit CU processed, and with the gain sensing signal during sensing and via the sensing of the output end of amplifier 240 transmission gain Signal is to control unit CU.Wherein, the type of amplifier 240 can be general common type, such as:Thin film transistor (TFT) is other Suitable type, and transistor number can be changed on demand, can also be used cooperatively with other elements.
It please also refer to Fig. 2 and Fig. 4, wherein Fig. 4 is the touch sensing device depicted in an embodiment according to the present invention Sense time diagram.Wherein, the horizontal coordinate of Fig. 4 is time t (unit:Second), it includes capacitance that vertical base, which is designated as mixing coordinate, Value C (units:Picofarad, pF), voltage value V (units:Volt) and frequency F (units:Kilo hertz, kHz).In the reality of Fig. 2 and Fig. 4 It applies in example, when sensing electrode 220_ (1)~220_ (N) Tst during stable state is not received by touch-control sensing information, frequency production Raw circuit 210 provides the steady-state signal Sst to control unit CU with steady frequency fst according to stable state capacitance Cst.
Next, the one of which of sensing electrode 220_ (1)~220_ (N) Tst during stable state receives touch-control sensing When information, touch sensing device 200 then enters Tse during sensing.For example, make touch sensing device 200 when user is saturating Cross such as finger, stylus, touch glove or other suitable media and sensing electrode 220_ (1)~220_ (N) at least its When middle one is contacted, Tse during sensing is initially entered.Due to the use of person through such as finger, stylus, touch glove, Or when other suitable medium proximities or the one at least within of contact sensing electrode 220_ (1)~220_ (N), make touch-control sensing The induction of device 200 and external electrical capacitance Δ C so that the stable state capacitance Cst of touch sensing device 200 shift result into And generate the touch-control sensing capacitance Cse more than stable state capacitance Cst.Wherein touch-control sensing capacitance Cse=Cst+ Δs C.Frequently Rate generation circuit 210 generates the sensing signal Sse with sensing frequency fse according to touch-control sensing capacitance Cse, wherein sensing frequency Rate fse is less than steady frequency fst, and provides the sensing signal Sse with sensing frequency fse to control according to sensing frequency fse Unit CU.Control unit CU receives sensing signal Sse and is provided corresponding to touch-control sensing information according to sensing frequency fse Action or function.That is, control unit CU can receive the sensing frequency fse less than steady frequency fst to provide correspondence Action in touch-control sensing information or function.
Referring to FIG. 5, Fig. 5 is the schematic diagram of the touch sensing device depicted in another embodiment according to the present invention.With Fig. 2 Embodiment unlike, condenser network 530 include correspond to reverser 212_ (1)~212_ (N) and sensing electrode 220_ (1) the sense capacitance 532_ (1) of~220_ (N)~532_ (N) and resonant capacitance 534_ (1)~534_ (N).Preferably, humorous Capacitance 534_ (the 1)~534_ (N) that shakes is serially connected.In the present embodiment, the of resonant capacitance 534_ (1)~534_ (N) One end T1_534_ (1)~T1_534_ (N) is electrically coupled to the output end of corresponding reverser 212_ (1)~212_ (N) respectively O_212_ (1)~O_212_ (N), second end T2_534_ (1)~T2_534_ (N) of resonant capacitance are electrically coupled to corresponding anti- To input terminal I_212_ (1)~I_212_ (N) of device 212_ (1)~212_ (N).Sense capacitance 532_ (1)~532_N is electric respectively Property is coupled to output end O_212_ (the 1)~O_212_ (N) and sensing electrode of corresponding reverser 212_ (1)~212_ (N) Between 220_ (1)~220_ (N).For example, sense capacitance 532_ (1) is electrically coupled to the output end of (1) reverser 212_ Between O_212_ (1) and sensing electrode 220_ (1).The first end T1_534_ (1) of resonant capacitance 534_ (1) is electrically coupled to instead To the output end O_212_ (1) and sensing electrode 220_ (1) of device 212_ (1), the second end T2_ of resonant capacitance 534_ (1) 534_ (1) is electrically coupled to the input terminal I_212_ (1) of reverser 212_ (1).Sense capacitance 532_ (2) is electrically coupled to reversely Between the output end O_212_ (2) and sensing electrode 220_ (2) of device 212_ (2).The first end T1_ of resonant capacitance 534_ (2) 534_ (2) is electrically coupled to the output end O_212_ (2) and sensing electrode 220_ (2) of reverser 212_ (2), resonant capacitance The second end T2_534_ (2) of 534_ (2) is electrically coupled to the input terminal I_212_ (2) of reverser 212_ (2), and so on.From On the other hand it sees, the first end T1_534_ (1) of resonant capacitance 534_ (1) can be electrically coupled to the output end of (1) reverser 212_ O_212_ (1), the input terminal I_212_ (2) of reverser 212_ (2), resonant capacitance 534_ (1) second end T2_534_ (1) with The second end T2_534_ (1) of the first end T1_532_ (1) of sense capacitance 532_ (1), resonant capacitance 534_ (1) can electric property couplings In the input terminal I_212_ (1) of reverser 212_ (1);The first end T1_534_ (2) of resonant capacitance 534_ (2) can electric property coupling In input terminal I_212_ (3), the resonant capacitance 534_ of the output end O_212_ (2) of reverser 212_ (2), reverser 212_ (3) (3) the first end T1_532_ (2) of second end T2_534_ (3) and sense capacitance 532_ (2), can the rest may be inferred to resonant capacitance The first end T1_534_ (N-1) of 534_ (N-1) can electric property coupling reverser 212_ (N-1) output end O_212_ (N-1), anti- To the second end T2_534_ (N) and sense capacitance 532_ of the input terminal I_212_ (N) of device 212_ (N), resonant capacitance 534_ (N) (N-1) first end T1_532_ (N-1);And the first end T1_534_ (N) of resonant capacitance 534_ (N) can be electrically coupled to reversely The of the output end O_212_ (N) of device 212_ (N), the input terminal I_212_ (1) of reverser 212_ (1), sense capacitance 532_ (N) One end T1_532_ (N) and control unit CU.Wherein, resonant capacitance 534_ (1)~534_ (N) be two electrode sandwiched dielectric layers (not It shows).Include optionally amplifier 240, then the first end T1_534_ of resonant capacitance 534_ (N) in part embodiment (N) can be electrically coupled to the output end O_212_ (N) of reverser 212_ (N), the input terminal I_212_ (1) of reverser 212_ (1), Amplifier 240 (such as:Input terminal) with the first end T1_532_ (N) of sense capacitance 532_ (N), and resonant capacitance 534_ (N) First end T1_534_ (N) can pass through amplifier 240 and be electrically coupled to control unit CU.The sense capacitance resonance electricity of the present embodiment The capacitance design for holding 534_ (1)~534_ (N) can be used to adjust the stable state of during stable state (or substantially during stable state) Capacitance (or substantially stable state capacitance).
Referring to FIG. 6, Fig. 6 is the schematic diagram of the touch sensing device depicted in another embodiment according to the present invention.With Fig. 5 Embodiment unlike, condenser network 630 only include correspond to reverser 212_ (1)~212_ (N) and sensing electrode The resonant capacitance 634_ (1) of 220_ (1)~220_ (N)~634_ (N).Preferably, resonant capacitance 634_ (1)~634_ (N) that This is connected in series with.For example, the first end T1_634_ (1) of resonant capacitance 634_ (1) can be electrically coupled to reverser 212_ (1) the second end T2_634_ (1) of output end O_212_ (1) and sensing electrode 220_ (1), resonant capacitance 634_ (1) can electricity Property is coupled to the input terminal I_212_ (1) of reverser 212_ (1).Sensing electrode 220_ (1) can be electrically coupled to reverser 212_ (1) between output end O_212_ (1) and the input terminal of reverser 212_ (2).The first end T1_ of resonant capacitance 634_ (2) 634_ (2) can be electrically coupled to the output end O_212_ (2) and sensing electrode 220_ (2) of reverser 212_ (2), resonant capacitance The second end T2_634_ (2) of 634_ (2) can be electrically coupled to the input terminal I_212_ (2) of reverser 212_ (2), and so on. On the other hand, the first end T1_634_ (1) of resonant capacitance 634_ (1) can be electrically coupled to the output of (1) reverser 212_ Hold the second end T2_634_ (2) of O_212_ (1), the input terminal I_212_ (2) of reverser 212_ (2), resonant capacitance 634_ (2) Reverser 212_ (1) can be electrically coupled to the second end T2_634_ (1) of sensing electrode 220_ (1), resonant capacitance 634_ (1) Input terminal I_212_ (1);The first end T1_634_ (2) of resonant capacitance 634_ (2) can be electrically coupled to reverser 212_ (2) Output end O_212_ (2), the input terminal I_212_ (3) of reverser 212_ (3), resonant capacitance 634_ (3) second end T2_ 634_ (3) and sensing electrode 220_ (2), can the rest may be inferred to the first end T1_634_ (N-1) of resonant capacitance 634_ (N-1) can It is the output end O_212_ (N-1) of electric property coupling reverser 212_ (N-1), the input terminal I_212_ (N) of reverser 212_ (N), humorous Shake the second end T2_634_ (N) and sensing electrode 220_ (N-1) of capacitance 634_ (N);And the first end of resonant capacitance 634_ (N) T1_634_ (N) can be electrically coupled to the input terminal I_ of the output end O_212_ (N) of reverser 212_ (N), reverser 212_ (1) 212_ (1), sensing electrode 220_ (N) and control unit CU.Include optionally amplifier 240, then in part embodiment The first end T1_634_ (N-1) of resonant capacitance 634_ (N) can be electrically coupled to the output end O_212_ of reverser 212_ (N) (N), the input terminal I_212_ (1) of reverser 212_ (1), amplifier 240 (such as:Input terminal) and sensing electrode 220_ (N), and The first end T1_634_ (N) of resonant capacitance 634_ (N) can pass through amplifier 240 and be electrically coupled to control unit CU.
In previous embodiment, the type of transistor can be general common transistor, such as:Bottom lock transistor npn npn, top lock Transistor npn npn or other suitable transistors.The semiconductor layer of transistor can be single or multi-layer structure, and its material includes non- Crystal silicon, nanocrystal silicon, microcrystal silicon, polysilicon, monocrystalline silicon, oxide semiconductor material, organic semiconducting materials, carbon nanotubes, Or other suitable semi-conducting materials.In previous embodiment, dielectric layer can be single or multi-layer structure, and its material includes inorganic Material, organic material or other suitable materials or combination above-mentioned.
Although the present invention is disclosed above with embodiment, it is not limited to the present invention, any affiliated technology neck Those of ordinary skill in domain, it is without departing from the spirit and scope of the present invention, therefore of the invention when can make a little change and modification Protection domain should be subject to following claims range institute defender.

Claims (13)

1. a kind of touch sensing device is configured on a substrate, including:
One frequency generating circuit is connected in series by multistage reverser, is configured at a peripheral region of the substrate, and the frequency is produced Raw circuit provides an output end of the steady-state signal with a steady frequency via the frequency generating circuit during a stable state It is transferred to a control unit;
Multiple sensing electrodes correspond to the multistage reverser, are configured at a sensing area of the substrate, multiple sensing electrode difference Multiple output ends of the corresponding multistage reverser are electrically coupled to, to receive a touch-control sensing information, and the peripheral region is located at The sensing area at least side;And
One condenser network is electrically coupled between multiple sensing electrode and the frequency generating circuit, and during the stable state, should Condenser network provides a stable state capacitance together with the frequency generating circuit,
Wherein when multiple sensing electrode one of which does not receive the touch-control sensing information during the stable state, frequency production Raw circuit provides the steady-state signal to the control unit according to the stable state capacitance of the condenser network, and works as multiple sensing Electrode one of which enters a sensing when receiving the touch-control sensing information between the steady state period during, which occurs One migration result makes the frequency generating circuit provide the sense with a sensing frequency according to the migration result during the sensing Signal is surveyed to the control unit.
2. touch sensing device as described in claim 1, the quantity of the wherein multistage reverser be greater than or equal to 3 it is strange Number, the output end of the wherein afterbody reverser in the multistage reverser are coupled to one first in the multistage reverser An input terminal and the control unit for grade reverser.
3. touch sensing device as described in claim 1, the wherein condenser network include corresponding to the multistage reverser and Multiple sense capacitances of multiple sensing electrode, multiple sense capacitance are electrically coupled to the corresponding multistage reverser respectively Between multiple output end and multiple sensing electrode.
4. touch sensing device as described in claim 1, the wherein condenser network include corresponding to the multistage reverser and Multiple resonant capacitances of multiple sensing electrode, respectively the resonant capacitance is with a first end and a second end, multiple resonance The first end of capacitance is electrically coupled to the multiple output end and multiple sensing electricity of the corresponding multistage reverser respectively Pole, the second end of multiple resonant capacitance are electrically coupled to multiple input terminal of the corresponding multistage reverser.
5. touch sensing device as described in claim 1, the wherein condenser network include corresponding to the multistage reverser and Multiple sense capacitances of multiple sensing electrode and multiple resonant capacitances, respectively the resonant capacitance there is a first end and one the Two ends, the first end of multiple resonant capacitance are electrically electrically coupled to multiple output of the corresponding multistage reverser respectively End, the second end of multiple resonant capacitance is electrically coupled to multiple input terminal of the corresponding multistage reverser, multiple Sense capacitance is electrically coupled to respectively between the multiple output end and multiple sensing electrode of the corresponding multistage reverser.
6. touch sensing device as described in claim 4 or 5, wherein multiple resonant capacitance system is series connection.
7. touch sensing device as described in claim 1, wherein condenser network be configured at the peripheral region on the substrate and At least one of the sensing area.
8. touch sensing device as described in claim 1, the wherein touch sensing device further include:
One input terminal of one amplifier, the amplifier is electrically coupled to the output end and capacitance electricity of the frequency generating circuit One output end on road, the amplifier is electrically coupled to the control unit, with gain steady-state signal during the stable state and via The steady-state signal of the output end transmission gain of the amplifier is to the control unit, and gain sense during the sensing Survey signal and via sensing signal of the output end of amplifier transmission gain to the control unit.
9. touch sensing device as described in claim 1, wherein respectively the reverser includes:
One the first transistor, the first transistor have a first end, a second end and a control terminal, the first transistor The first end is electrically coupled to a first system voltage with the control terminal;And
One second transistor, the second transistor have a first end, a second end and a control terminal, the second transistor The first end and the second end of the first transistor are electrically coupled to an output end of the reverser, the second transistor jointly The second end be electrically coupled to a reference voltage, it is one defeated to be electrically coupled to the reverser for the control terminal of the second transistor Enter end.
10. touch sensing device as described in claim 1, wherein respectively the reverser includes:
One the first transistor, the first transistor have a first end, a second end and a control terminal, the first transistor The first end is electrically coupled to a first system voltage with the control terminal;
One second transistor, the second transistor have a first end, a second end and a control terminal, the second transistor The first end is electrically coupled to the second end of the first transistor, and the second end of the second transistor is electrically coupled to a ginseng Voltage is examined, the control terminal of the second transistor is electrically coupled to an input terminal of the reverser;
One third transistor, the third transistor have a first end, a second end and a control terminal, the third transistor The first end is electrically coupled to a second system voltage, and the control terminal of the third transistor is electrically coupled to the first transistor The second end and the second transistor the first end;And
One the 4th transistor, the 4th transistor have a first end, a second end and a control terminal, the 4th transistor The second end of the first end and the third transistor is electrically coupled to an output end of the reverser, and the 4th transistor is somebody's turn to do Second end is electrically coupled to the reference voltage, and the control terminal of the 4th transistor is electrically coupled to the input of the reverser End.
11. it is at least a part of to be surrounded on the sensing area for touch sensing device as described in claim 1, the wherein peripheral region.
12. touch sensing device as described in claim 1, wherein when the sensing electrode receives the touch-control between the steady state period During entering the sensing when sensitive information, which occurs the migration result and generates one more than the stable state capacitance Touch-control sensing capacitance, the frequency generating circuit generate the sensing frequency according to the touch-control sensing capacitance, according to sensing frequency Rate provides the sensing signal with the sensing frequency to the control unit, and wherein the sensing frequency is less than the steady frequency.
13. touch sensing device as described in claim 1, wherein the substrate includes non-planar substrate or special-shaped substrate.
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