CN108581168A - A kind of solid welding procedure of heat radiation chip - Google Patents
A kind of solid welding procedure of heat radiation chip Download PDFInfo
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- CN108581168A CN108581168A CN201810439165.7A CN201810439165A CN108581168A CN 108581168 A CN108581168 A CN 108581168A CN 201810439165 A CN201810439165 A CN 201810439165A CN 108581168 A CN108581168 A CN 108581168A
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- chip
- radiator
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- heat radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/021—Isostatic pressure welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of solid welding procedures of heat radiation chip, include the following steps：1）It chooses and matched first radiator of chip body；2）The assembly of heat radiation chip：The chip body and the first radiator are positioned in the sealed compartment of hot isostatic press simultaneously, and vacuum pumping is carried out to sealed compartment；Inert gas is injected after evacuated in sealed compartment, using heat and other static pressuring processes by chip body and the first radiator solid diffusivity；In the heat and other static pressuring processes, heating temperature is 0.3~0.8 times of the first radiator melting temperature.The solid welding procedure of the present invention, the heat radiation chip prepared, perfect heat-dissipating, voidage is low, and whole performance is high.
Description
Technical field
The invention belongs to chip package processing technique fields, and in particular to a kind of solid welding procedure of heat radiation chip.
Background technology
Power device is widely used in electronics, electric power, high ferro field general, they are usually operated at high pressure, high current
In the case of, self-heating and it is lost very serious when work, application environment is severe, therefore power device is easy to fail, and makes
At certain economic loss and accident.In the failure of power device, fraction is caused due to the use of problem.Major part is by work(
Failure caused by the technique and quality problems of rate device itself, and the most common technique of power device and quality problems are exactly chip
Bonding die cavity problem, bonding die using soldering and eutectic weldering（Such as tin-lead solder, golden antimony alloy piece, tin silver copper, tin-lead silver, conduction
The solders such as glue）, this is a kind of liquid phase welding technique, and air is discharged in solder solidification process, liquid solder, causes welding surface shape
At a large amount of cavities, these cavities leave reliability hidden danger to power device.When voidage is more than certain proportion, in power device
In part application, heat dissipation is bad at the cavity below chip, forms part " hot spot ", and device thermal resistance is made to increase, local at " hot spot "
Electric field is concentrated, and power device chip performance is caused to deteriorate, and forms vicious circle, it is secondary that final " hot spot " causes power device to induce
Failure is burnt in breakdown.
Scientific research personnel, how take much time all reduces power device chip bonding die voidage in research, has every year
The research topic of this respect generates a large amount of research paper.But it is lacked since chip liquid phase bonding die technology has the intrinsic of " born "
Point acts on little, effect unobvious in terms of chip bonding die voidage reduction.There is an urgent need to a kind of new process and new technologies, come
Thoroughly solve the problems, such as the bonding die cavity of power device.Problem is solved for this, and power device thermal resistance has dropped, and bonding die voidage is big
Width declines, and the reliability of power device can be promoted significantly.
Therefore the new technology and new process of power device chip bonding die, there is good economic benefit and social benefit.It is many
This new technology is all craved for solve the technical barrier that puzzlement power device industry reaches decades very much by Electronics Factory.Such as attached drawing 1
Shown in power die under piece tin-lead adhesive layer in the prior art X-ray photograph；Power die under piece tin-lead described in Fig. 2
The X-ray photograph of solder；The sectional view of power die under piece tin-lead solder shown in Fig. 3；Resistor end shown in Fig. 4 tin-lead
The sectional view of solder；The sectional view of Surface Mount inductor tin-lead solder shown in fig. 5.It can be seen that from Fig. 1-5, in the prior art,
Cavity is big in chip bonding die layer, and voidage is more, and performance in entire chip use is caused to decline.In the prior art, these
Basic reason existing for cavity is in chip forming process, and heat dissipation is uneven, leads to hot stack, the cavity of formation, specially chip
When bonding die, air escapes in bonding die slurry, and many cavities are formed in adhesive linkage, these cavities are in chip operation, formation office
Portion's " heat island " leads to hot stack, and heat dissipation is uneven, influences device reliability.
Invention content
In order to solve the high deficiency of prior art chips bonding die voidage, the present invention provides a kind of solid Welders
Skill is solved by using heat and other static pressuring processes in traditional handicraft, and when chip bonding die, a large amount of cavities are also easy to produce in adhesive linkage
The problem of.
The technical problem to be solved in the present invention is achieved through the following technical solutions：
A kind of solid welding procedure of heat radiation chip, includes the following steps：
1）It chooses and matched first radiator of chip body；
2）The assembly of heat radiation chip：The chip body and the first radiator are positioned over the sealed compartment of hot isostatic press simultaneously
It is interior, vacuum pumping is carried out to sealed compartment；Inert gas is injected after evacuated in sealed compartment, it will using heat and other static pressuring processes
Chip body and the first radiator solid diffusivity, obtain heat radiation chip；
In the heat and other static pressuring processes, heating temperature is 0.3 times~0.8 times of the first radiator melting temperature.
Further, described 2）In the installation step of heat radiation chip, after being vacuumized in the sealed compartment, vacuum degree 1x
10-3 Pa~20x 10-3 Pa。
Further, described 2）In the installation step of heat radiation chip, in the heat and other static pressuring processes, to inert gas plus
The rate of rise of pressure, the inert gas is 0.7MPa/s~1.3MPa/s.
Further, described 2）In the installation step of heat radiation chip, in the heat and other static pressuring processes, to inert gas plus
The chip body and the first radiator are heated while pressure, heating rate when heating is 3 DEG C/min~7 DEG C/min.
Further, described 1）It chooses with the matched first radiator step of chip body and is specially：
Selection and matched first radiator of chip body, and it is respectively provided with the first heat dissipation dress in the upper and lower sides of the chip body
When setting, the heat dissipation performance for being located at the first radiator on the downside of the chip body is dissipated more than chip body upside first is located at
The heat dissipation performance of thermal.
Further, the first heat dissipating layer is equipped between the chip body and the first radiator.
Further, described 1）It chooses with the matched first radiator step of chip body and is specially：
It chooses with matched first radiator of chip body, the setting two and two on the same surface of the chip body
The the first above radiator is equipped with the second heat dissipating layer between the first adjacent radiator.
Further, described 2）Further include the assembly of the second radiator after the installation step of heat radiation chip, described second
The assembly of radiator is specially：
On the surface of heat radiation chip, the second radiator is placed, by the second radiator and the heat radiation chip assembly connection.
Further, second radiator connects welding procedure by eutectic with the heat radiation chip and connect, described
It is connected by terne metal slurry between second radiator and heat radiation chip.
Further, the outer surface of second radiator is also coated with coating.
Beneficial effects of the present invention：
The present invention uses hot isostatic pressing solid-phase joining technique（Hot isostatic pressing ）Power device chip is carried out
Bonding die is used for hot isostatic pressing solid-phase joining technique in the production of power device, at home for the first time since this new process is adopted
With solid phase joining technique, welding surface is connected using solid-state diffusion, no longer uses traditional liquid phase welding procedure, solves tradition
There are a large amount of cavities in the welding surface of welding procedure chips, HIP（Hot isostatic pressing ）Technology
It is used successfully in the manufacturing process of power device, almost eliminates the cavity on chip welding surface, significantly reduce cavity
Rate reduces thermal resistance, and the inherent reliability of power device has been significantly increased, and solves puzzlement power device industry and reaches decades
Technical barrier.
HIP（Hot isostatic pressing ）The Die strength of connection is high, and all directions gas pressure phase
Together, chip is not susceptible to deform, and is not influenced by chip form, carry out size Control that can be stringent.
In the present invention, the connection as a result of hot isostatic pressing technique to heat sink, sheet metal and chip etc., formation
Solid diffusivity avoids the accumulation of heat, solves that chip cooling in the prior art is uneven, accumulated heat, chip bonding die is caused to be formed
The problem in cavity, greatly improves the reliability of chip.
The present invention is described in further details below with reference to accompanying drawings and embodiments.
Description of the drawings
Fig. 1 is the X-ray photograph of the under piece of power die in the prior art tin-lead adhesive layer provided by the invention；
Fig. 2 is the X-ray photograph of the under piece tin-lead solder of power die in the prior art provided by the invention；
Fig. 3 is the sectional view of the under piece tin-lead solder of power die in the prior art provided by the invention；
Fig. 4 is the sectional view of the end of resistor in the prior art provided by the invention tin-lead solder；
Fig. 5 is the sectional view of the inductor tin-lead solder of Surface Mount in the prior art provided by the invention；
Fig. 6 is a kind of structural schematic diagram of the chip of perfect heat-dissipating provided by the invention；
Fig. 7 is the sectional view that 3 chips of embodiment provided by the invention are used for power tube；
In figure：
1, chip body；2, the first sheet metal；3, the second sheet metal；4, the first heat sink；5, the second heat sink；6, copper electrode
Piece；7, copper-based seat；8, protective layer；9, third sheet metal；10, the 4th sheet metal；11, protective film.
Specific implementation mode
Reach the technological means and effect that predetermined purpose is taken for the present invention is further explained, it is right with reference to embodiments
Specific implementation mode, structure feature and its effect of the present invention, detailed description are as follows.
In the present embodiment, the heat radiation chip formed after solid welding procedure is assembling chip, i.e., increases on 1 surface of chip body
Add radiator, increases chip cooling performance, avoid the voidage between chip articulamentum.
Embodiment 1
With reference to shown in attached drawing 6, the technique in the present embodiment is as follows：
The first step, the first radiator chosen chip body 1 and matched with chip body 1；First radiator can be with
For 1 or multiple, in the present embodiment, the first radiator is 1, when placing, can be set to any the one of chip body 1
Face.
Second step carries out device to heat radiation chip；Specifically, chip body 1 and the first radiator are positioned over simultaneously
In the sealed compartment of hot isostatic press, vacuum pumping is carried out to sealed compartment；Inert gas is injected after evacuated in sealed compartment,
Using heat and other static pressuring processes by chip body 1 and the first radiator solid diffusivity；
In the heat and other static pressuring processes, heating temperature is 0.3~0.8 times of the first radiator melting temperature.
In the present embodiment, heating temperature uses 0.3~0.8 times of the first radiator melting temperature, temperature at this time to fit
The movement velocity for closing the first radiator atom can effectively ensure that and realize solid phase between the first radiator and chip body 1
Connection, and if when temperature is less than 0.3 times of the first radiator melting temperature, temperature is too low, causes atomic motion slow, expands
Laxity, not prison welding is solid, and the chipset dressing after solid diffusivity easily disconnects；When temperature is higher than the first radiator melting temperature
At 0.8 times, temperature is too high, is easy to influence the performance of chip body 1, reduces the reliability in chip later stage.
In the present embodiment, since heating temperature is 0.3~0.8 times of the first radiator melting temperature, so that the
One radiator is in fusing point proximity values, and then realizes solid diffusivity convenient for the first radiator and chip body 1, avoids core
Cavity between piece ontology 1 and the first radiator on articulamentum solves the problems, such as hot localised points between the adhesive layer of chip.
In the present embodiment, the position of the first radiator fusing point is located at the position that the first radiator is contacted with chip body 1
It sets, is convenient for the solid diffusivity of the first radiator and chip body 1.
When there is several first radiators, and when several first radiators have mutually solid diffusivity, fusing point position
Setting in the periphery of the first radiator, it is convenient for the mutual solid diffusivity of multiple first radiators.
In the present embodiment, in the installation step of heat radiation chip, after being vacuumized in the sealed compartment, vacuum degree is 1x 10-3
Pa~20x 10-3 Pa ensure that the vacuum in sealed compartment using the vacuum degree of this range before carrying out hot isostatic pressing,
Reduce the entrance of impurity, good process environments are improved for subsequent hot isostatic pressing.
And after inert gas pressurization, the pressure of entire sealed compartment is 100MPa~120MPa, on the one hand, pressure after pressurization
When power is in 100MPa~120MPa, it is suitable for the technological requirement of a variety of radiator hot isostatic pressings, is particularly suitable for a variety of gold
Category and alloy, increase the type of radiator.On the other hand, if vacuum degree is not up to standard, aerobic gas and water vapour in sealed compartment
With other impurity, the effect of heat and other static pressuring processes is influenced.
Embodiment 2
With reference to shown in attached drawing 6-7, the invention discloses a kind of solid welding procedure of heat radiation chip, the chip sheet in the present embodiment
The upper and lower of body 1 is equipped with the first radiator, and first radiator is respectively the first heat sink 4 and the second heat sink 5.
Specifically include following steps：
The first step, the formation of the first radiator：Chip body 1, the first sheet metal 2, the first heat sink 4 and the second heat sink
5, chip finished product radiates according to the first heat sink 4, the first sheet metal 2, chip body 1, the second sheet metal 3 and second from top to down
The sequence of plate 5 is stacked, and the chip with the first radiator is formed.
In the present embodiment, sheet metal is set between the first radiator and chip body 1 as the first heat dissipating layer, favorably
The heat dissipation performance of chip after improving assembling.
In the present embodiment, the first sheet metal 2 and the second sheet metal 3 select molybdenum and tungsten to be prepared respectively.First heat sink 4
Solid material is respectively adopted with the second heat sink 5 to be prepared.The heat dissipation heat transfer property of molybdenum and tungsten is preferable, therefore the two is selected to make
For the first heat dissipating layer.
Second step, the assembly of heat radiation chip；By the above-mentioned chip with the first radiator stacked, it is quiet to be put into heat etc.
In the sealed compartment of press, the fixed heat radiation chip carries out vacuum pumping to sealed compartment；It is true in sealed compartment after vacuumizing
Reciprocal of duty cycle is 1x 10-3 Pa injects inert gas in sealed compartment after vacuumizing, the purity of inert gas is 99.99%；To being passed through
After the sealed compartment of inert gas carries out the pressurization such as heat and heat preservation, heat radiation chip is obtained；
The pressurizations such as the heat are specially first to pressurize to the inert gas in sealed compartment, are then heated to bulk chip.
Soaking time after heating is 1.5 hours.
When the pressurizations such as heat, the rate of rise of the inert gas is 0.7MPa/s, is forced into 100MPa；Heating rate is 3
℃/min；Until temperature rises to 0.3 times of 5 fusing point of the first heat sink 4 and the second heat sink.
In the present embodiment, the first sheet metal 2, the first heat sink 4 and second heat sink 5 etc. are set on chip body 1
First radiator so that the upper and lower of chip body 1 is respectively provided with the first radiator, while the first radiator in every one side
It is two, increases heat dissipation performance of the chip body 1 to periphery, in particular by metal, good thermal conduction, in use, by chip
The heat generated in ontology 1, uniformly to external diffusion.In the present embodiment, the first sheet metal 2 and the second sheet metal 3 are dissipated as first
Thermosphere increases the heat dissipation of chip.
In the present embodiment, heat and other static pressuring processes are selected to realize the connection of each layer of said chip, it is ensured that consolidating between each layer
It is connected, avoids the liquid outflow between chip；In combination with heat sink, the heat dissipation performance of entire chip is improved.Heat etc.
Chip after the connection of static pressure technique, even heat between upper and lower surface articulamentum, no cavity reduce thermal resistance, and then chip
Heat transfer is uniform, avoids hot localised points caused by adhesive linkage cavity and concentrates, reduces second breakdown, improve power device
Reliability.
Compared with prior art, it in the present embodiment, is realized by hot isostatic pressing between chip and sheet metal, heat sink
Solid diffusivity.On the one hand, compared with traditional liquid phase connection, solid diffusivity can improve between chip and sheet metal, heat sink
Adhesive strength, improve the intensity of chip finished product；On the other hand, by this connection type, liquid in the prior art is solved
Empty problem when being connected, and then ensure that the quality of chip, setting in this way, improve the total quality of chip with
And the reliability of chip.
Embodiment 3
A kind of solid welding procedure of heat radiation chip in the present embodiment, in the present embodiment, radiator is 4, the first heat sink
4, the second heat sink 5, copper electrode piece 6 and copper-based seat 7 layer are set to the upper and lower surface of chip body 1, in order to which heat radiation is imitated
Fruit in the present embodiment, has two kinds of radiators respectively in the upper and lower surface of chip body 1.
The present embodiment specifically includes following technique：
The first step, chip body 1 pre-process：Decontamination processing is carried out to chip body 1；
Chip body 1 is specially thinned to 270um~360um, 1 upper and lower surface of chip body is processed by shot blasting respectively,
The upper and lower surface of chip is bombarded 2 minutes respectively using plasma machine simultaneously, completes pretreatment.By pretreatment, by chip list
The impurity in face removes, and improves the cleanliness factor of chip.Since chip material is special, if impurity is excessive, have to the reliability of chip
Large effect.
Second step, the formation of radiator；The formation such as the first sheet metal 2, the first heat sink 4 are placed on chip body 1
Chip with radiator, the above-mentioned chip with radiator are followed successively by from top to down：First heat sink 4, the first metal
Piece 2, chip body 1, the second sheet metal 3 and the second heat sink 5；
Third walks, the assembly of heat radiation chip：The chip with radiator is put into the sealed compartment of hot isostatic press, Gu
The fixed heat radiation chip carries out vacuum pumping to sealed compartment；After vacuumizing, the vacuum degree in sealed compartment is 8x 10-3 Pa。
After vacuumizing, inert gas is injected in sealed compartment, the purity of inert gas is 99.99%；To being passed through inert gas
Sealed compartment carry out the pressurization such as heat and heat preservation after, obtain heat radiation chip；
The pressurizations such as the heat are specially first to pressurize to the inert gas in sealed compartment, are then heated to bulk chip.
When the pressurizations such as heat, the rate of rise of inert gas is 1MPa/s, and pressure 106MPa is forced into using inert gas；Add
When hot, the heating rate of heat radiation chip is 5 DEG C/min, at this point, the first heat sink 4,5 fusing point of the second heat sink are close, therefore temperature
0.3 times~0.8 times of two melting temperatures is risen to, intermediate most easy-operating temperature is chosen.
In the present embodiment, the first heat sink 4 selects FeNi alloys, the second heat sink 5 to select Ke's valve substrate, so when temperature
Degree can be selected between 380 DEG C~420 DEG C.
Soaking time after heating is 1.5 hours.
4th step, eutectic weld step；The upper and lower surface of heat radiation chip is passed through into slicker solder slurry and copper electrode piece 6, copper respectively
Pedestal 7 carries out eutectic weldering connection.
At this point, the first heat sink 4 and the second heat sink 5 are the first radiator, and copper electrode piece 6 and 7 conduct of copper-based seat
Second radiator is be bonded by terne metal slurry between the first radiator and the second radiator.
Further, in this embodiment third is arranged in the one side of the first heat sink 4 and the second heat sink 5 far from chip
Sheet metal 9 and the 4th sheet metal 10, third sheet metal 9 and the 4th sheet metal 10 are walked by the assembly of second step and third respectively
The pressurization such as heat it is affixed with the first heat sink 4 and the second heat sink 5, it is therefore an objective to increase heat dissipation performance.
At this point, metal fin, which is equivalent to, is further added by one layer of radiator, and the increase of radiator quantity, further increase
Heat sheds in big chip body 1, improves heat dissipation performance.
In the present embodiment, copper electrode piece 6 and copper-based seat 7 are welded after heat radiation chip assembling, then using traditional eutectic weldering,
The eutectic welding piece again that solder bonds line and sample carry out not only is facilitated, but also convenient for uniform scattered in entire chip manufacture
Heat.
Meanwhile traditional eutectic weldering welding technique have the characteristics that it is at low cost, at this point, due to the chip cooling technology of assembling
It is good, so when welding technique welded using eutectic, although this technology has empty presence, due to the heat radiation chip of assembling early period
Integral heat sink performance is excellent, therefore the heat radiation chip heat dissipation performance formed is stronger than the heat dissipation performance of the chip of prior art weld.
Further, in this embodiment being plated on the surface of copper electrode piece 6 using PbSn alloy layers, radiating core is produced
After piece, then using traditional bonding die slurry, chip is sticked to different encapsulating package and metal substrate by tin-lead slurry, makes production
The application range of the chip gone out is wider.
In the present embodiment, increase slurry and metal layer between multiple radiators, since chip upper and lower surface uses HIP
Technology（The electrostatic pressures technology such as heat）It, can be with terne metal easily this after being made into the module with no hole radiator
Die bonding is in any substrate and package casing.
In the present embodiment, the second radiator is connect with the first radiator by heat dissipating layer, is improved whole
The heat dissipation performance of body.
Embodiment 4
A kind of solid welding procedure of heat radiation chip in the present embodiment, in the present embodiment, radiator is 4, the first heat sink
4, the second heat sink 5, copper electrode piece 6 and copper-based seat 7 layer are set to the upper and lower surface of chip body 1, in order to which heat radiation is imitated
Fruit, the present embodiment have two radiators respectively in the upper and lower surface of chip body 1.
The present embodiment specifically includes following technique：
The first step, chip body 1 pre-process：Decontamination processing is carried out to chip body 1；
Specially by the rear to being thinned to 270um~360um of chip, chip upper and lower surface is processed by shot blasting respectively, is adopted simultaneously
The upper and lower surface of chip is bombarded 2 minutes respectively with plasma machine, completes pretreatment.By pretreatment, by the miscellaneous of chip surface
Matter removes, and improves the cleanliness factor of chip.Since chip material is special, if impurity is excessive, have to using effect of chip etc.
Large effect.Because of the impurity of chip surface, it is easy to influence the assembly connection in later stage, reduces the performance of chip.
Second step, the formation of radiator；The formation such as the first sheet metal 2, the first heat sink 4 are placed on chip body 1
Chip with radiator, the above-mentioned chip with radiator are followed successively by from top to down：First heat sink 4, the first metal
Piece 2, chip body 1, the second sheet metal 3 and the second heat sink 5；
Third walks, the assembly of heat radiation chip：By the sealed compartment that there is the chip of the first radiator to be put into hot isostatic press
Interior, the fixed heat radiation chip carries out vacuum pumping to sealed compartment；After vacuumizing, the vacuum degree in sealed compartment is 14x 10-3 Pa。
Inert gas is injected in sealed compartment, the purity of inert gas is 99.99%；To being passed through the sealed compartment of inert gas
After carrying out the pressurization such as heat and heat preservation, heat radiation chip is obtained；At this point, purity inert gas is higher, mixing for oxygen, moisture etc. is avoided
It is miscellaneous, and then can ensure being normally carried out for heat and other static pressuring processes.
The pressurizations such as the heat are specially first to pressurize to the inert gas in sealed compartment, are then heated to bulk chip.
When the pressurizations such as heat, the rate of rise of inert gas is 1MPa/s, and 114 MPa of pressure is forced into using inert gas；
When heating, the heating rate of heat radiation chip is 5 DEG C/min, at this point, the fusing point of the first heat sink 4, the second heat sink 5 is close, therefore
Temperature rises to 0.3 times~0.8 times of two melting temperatures, chooses intermediate most easy-operating temperature.
In the present embodiment, the first heat sink 4 selects FeNi alloys, the second heat sink 5 to select Ke's valve substrate, so when temperature
Degree can be selected between 380 DEG C~420 DEG C.
Soaking time after heating is 2 hours.
4th step, heat and other static pressuring processes connect the second radiator；It is placed respectively in the upper and lower surface of above-mentioned heat radiation chip
Copper electrode piece 6, copper-based seat 7, and increase terne metal slurry between copper electrode piece 6 and heat radiation chip, copper-based seat 7 and heat radiation chip
Material, according to step 3 heat and other static pressuring processes carry out the second radiator assembly, meanwhile, at this time in heat and other static pressuring processes plus
Hot temperature, it should be 0.3 times~0.8 times of copper fusing point, be convenient for the assembly of copper electrode piece 6 and copper-based seat 7 and heat radiation chip.
It is possible to further be additionally provided with the coat of metal or alloy layer in the upper surface of copper electrode piece 6, it is made to be closed with slicker solder
Gold conductor and copper electrode piece 6 together solid diffusivity or welding, in the present embodiment, using solid diffusivity.
Using tin-lead slurry, technology maturation is at low cost.
In the present embodiment, the first sheet metal 2 and the second sheet metal 3 select metallic lead to be prepared respectively.
In the present embodiment, due to increasing copper electrode piece 6 and copper-based seat 7, and protection is formed when terne metal slurry bonding
Layer 8 ensure that uniformly shedding for heat.
In the present embodiment, two radiators are set in the same side of chip body 1 so that about 1 chip body dissipates
Hot property is further promoted.
As a further improvement, in the present embodiment, it can also be by 6 or copper-based seat 7 of the second radiator copper electrode piece directly
It is connect with chip body 1, i.e., in the present embodiment, the second radiator can be connect with chip body 1, can also be with the first heat dissipation
Device connects, and can also be connect simultaneously with chip body 1 and the first radiator, and then realize to heat radiation chip heat dissipation effect
It is promoted.
In the present embodiment, the length of copper electrode piece 6<The length of third sheet metal 9<The length of first heat sink 4<First gold medal
Belong to the length of piece 2<The length of chip body 1<The length of second sheet metal 3<The length of second heat sink 5<4th sheet metal 10
Length<The length of copper-based seat 7.
Pass through the restriction of above-mentioned length so that entire chip forms trapezium structure, and on the whole, structural stability is higher than other
The chip of structure.
In the present embodiment, the first heat sink 4 and the second heat sink 5 are a kind of radiator, copper electrode piece 6 and copper-based seat 7
As another radiator, auxiliary heat dissipation is realized.Chip cooling effect after formation is more preferable.
It in the present embodiment, is attached using hot isostatic pressing, copper electrode piece 6 and copper-based seat 7 and third sheet metal 9 and the 4th
The connection of sheet metal 10 is more secured, is accomplished that solid diffusivity, avoids third sheet metal 9 and the 4th metal as articulamentum
Empty generation on piece 10, the heat of chip body 1 shed faster.
Embodiment 5
A kind of solid welding procedure of heat radiation chip in the present embodiment, including following technique：
The first step, the pretreatment of the first heat sink 4 and the second heat sink 5, first heat sink, 4 and second heat sink 5
Pretreatment be specifically：
The size that first heat sink 4 and the second heat sink 5 are cut into needs, upper surface to the first heat sink 4 and under
Surface is polished successively, plasma bombardment；The upper surface and lower surface of second heat sink 5 is polished successively, etc. from
Son bombardment.
Second step, the formation of radiator；The formation such as the first sheet metal 2, the first heat sink 4 are placed on chip body 1
Chip with radiator, the above-mentioned chip with radiator are followed successively by from top to down：First heat sink 4, the first metal
Piece 2, chip body 1, the second sheet metal 3 and the second heat sink 5；
Third walks, the assembly of heat radiation chip：The chip with radiator is put into the sealed compartment of hot isostatic press, Gu
The fixed heat radiation chip carries out vacuum pumping to sealed compartment；After vacuumizing, the vacuum degree in sealed compartment is 20x 10-3 Pa。
Inert gas is injected in sealed compartment, the purity of inert gas is 99.99%；To being passed through the sealed compartment of inert gas
After carrying out the pressurization such as heat and heat preservation, heat radiation chip is obtained；
The pressurizations such as the heat are specially first to pressurize to the inert gas in sealed compartment, are then heated to bulk chip.
When the pressurizations such as heat, the rate of rise of inert gas is 1.3MPa/s, and pressure 120MPa is forced into using inert gas；
When heating, the heating rate of heat radiation chip is 7 DEG C/min, until temperature rises to 5 fusing point of the first heat sink 4 and the second heat sink
0.8 times.
Soaking time after heating is 4 hours.
4th step, eutectic weld step；PbSn alloys and copper electrode piece 6 are placed into the upper surface of heat radiation chip from top to down,
The lower surface of the heat radiation chip is provided with copper-based seat 7.Then eutectic welding technology is used, by the PbSn alloys stacked, copper electricity
Pole piece 6, heat radiation chip and copper-based seat 7 are welded.
In the present embodiment, eutectic weldering is exactly solder most traditional in current electronics industry, the binary or ternary of chip use
Solder is a kind of liquid phase weldering, and here it is eutectic welderings.It is welded finally by eutectic, on the one hand, heat dissipation performance is promoted；On the other hand, just
In the connection of chip and other devices.
Chip in the present embodiment includes PbSn alloy layers, copper electrode piece 6, copper electrode piece 6 and third sheet metal 9, the
Three sheet metals 9, the first heat sink 4, the first sheet metal 2, chip body 1, the second sheet metal 3.Second heat sink 5, the 4th metal
Protective film 11 between piece 10, the 4th sheet metal 10 and copper-based seat 7 and copper-based seat 7；Above-mentioned component is sequentially overlapped from top to down,
The chip of perfect heat-dissipating in the present embodiment is formed, the chip of the perfect heat-dissipating, length becomes larger under upper, for ladder
Shape structure.When choosing above-mentioned material, in heat and other static pressuring processes, 380~420 DEG C of heating temperature.
In the chip of perfect heat-dissipating in the present embodiment, the first sheet metal 2, the second sheet metal 3, third sheet metal 9 with
And the 4th sheet metal 10 can select a kind of material in lead, molybdenum or tungsten to be prepared, the first heat sink 4 use FeNi alloys
It is made, and the second heat sink 5 is prepared using Ke's valve substrate, FeNi alloys and Ke's valve substrate have at low cost, heat conduction
The feature that performance is good, match materials performance is good, therefore select both materials as radiator in the present embodiment.
Passing through above-mentioned selection so that entire chip is metal structure, and solid diffusivity may be implemented between each layer, while the
It is respectively formed full Ohm connection between one heat sink 4 and the first sheet metal 2 and the second heat sink 5 and the second sheet metal 3.Using complete
Ohm connection has the advantage that contact resistance is low, thermal resistance is low, voidage is few.
The present embodiment can be additionally provided with the coat of metal or Alloy Plating before eutectic welds step in the upper surface of copper electrode piece 6
Layer, makes it be welded together with terne metal slurry and copper electrode piece 6.By coating, facilitates the bonding wire in later stage, be convenient for
Electrical connection.
In the present embodiment, further include perfect heat-dissipating chip prepare after the completion of, carry out dioxy respectively in the both sides of chip
The addition of SiClx film realizes the protection to chip by the way that silicon dioxide film is added.
In the present embodiment, the first sheet metal 2 and the second sheet metal 3 select metallic lead to be prepared respectively.
In the present embodiment, due to increasing copper electrode piece 6 and copper-based seat 7, and protection is formed when terne metal slurry bonding
Layer 8 ensure that uniformly shedding for heat.
In the present embodiment, the length of copper electrode piece 6<The length of third sheet metal 9<The length of first heat sink 4<First gold medal
Belong to the length of piece 2<The length of chip body 1<The length of second sheet metal 3<The length of second heat sink 5<4th sheet metal 10
Length<The length of copper-based seat 7.
Pass through the restriction of above-mentioned length so that entire chip forms trapezium structure, and on the whole, structural stability is higher than other
The chip of structure.
Comparison diagram 1-5 and 7 is it is found that chip in the present embodiment, and cavity is few, stable structure, almost without cavity.
Chip prepared by technique in the present invention, the cavity in secondary eutectic bonding die layer is not direct to be connect with chip, but
It is indirectly connected, avoids hot localised points caused by drawing cavity, improve the inherent reliability of power device.
In the present invention, inert gas is argon gas, helium, nitrogen etc.
In the present invention, by hot isostatic pressing technique HIP（Hot isostatic pressing ）Production technology for power device
In, this new technology can be used for all power devices, such as high-power MOS tube, IGBT, VDMOS pipe, power rectifier pipe, junction type
Field-effect tube, large power triode, silicon-controlled and part integrated circuit（It is newly-increased）Deng.
The chip produced using HIP technologies, chip carry upper/lower electrode plate and solid phase material in succession, and user is according to need
It wants neatly select different packing forms.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
The specific implementation of the present invention is confined to these explanations.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to the present invention's
Protection domain.
Claims (10)
1. a kind of solid welding procedure of heat radiation chip, which is characterized in that include the following steps：
Selection and chip body（1）Matched first radiator；
The assembly of heat radiation chip：The chip body（1）It is positioned over the sealed compartment of hot isostatic press simultaneously with the first radiator
It is interior, vacuum pumping is carried out to sealed compartment；Inert gas is injected after evacuated in sealed compartment, it will using heat and other static pressuring processes
Chip body（1）With the first radiator solid diffusivity, heat radiation chip is obtained；
In the heat and other static pressuring processes, heating temperature is 0.3 times~0.8 times of the first radiator melting temperature.
2. a kind of solid welding procedure of heat radiation chip according to claim 1, which is characterized in that described 2）Heat radiation chip
Installation step in, after being vacuumized in the sealed compartment, vacuum degree be 1x 10-3 Pa~20x 10-3 Pa。
3. a kind of solid welding procedure of heat radiation chip according to claim 1, which is characterized in that described 2）Heat radiation chip
Installation step in, in the heat and other static pressuring processes, pressurize to inert gas, the rate of rise of the inert gas is
0.7MPa/s~1.3MPa/s.
4. a kind of solid welding procedure of heat radiation chip according to claim 3, which is characterized in that described 2）Heat radiation chip
Installation step in, in the heat and other static pressuring processes, to the chip body while pressurization to inert gas（1）It is dissipated with first
Thermal heats, and heating rate when heating is 3 DEG C/min~7 DEG C/min.
5. a kind of solid welding procedure of heat radiation chip according to claim 1, which is characterized in that described 1）Choose with
Chip body（1）Matched first radiator step is specially：
Selection and chip body（1）Matched first radiator, and in the chip body（1）Both sides up and down be equipped with
One radiator is located at the chip body（1）The heat dissipation performance of the first radiator of downside, which is more than, is located at the chip body
（1）The heat dissipation performance of the first radiator of upside.
6. a kind of solid welding procedure of heat radiation chip according to claim 5, which is characterized in that the chip body
（1）The first heat dissipating layer is equipped between the first radiator.
7. a kind of solid welding procedure of heat radiation chip according to claim 1, which is characterized in that described 1）Choose with
Chip body（1）Matched first radiator step is specially：
Selection and chip body（1）Matched first radiator, in the chip body（1）Same surface be arranged two with
And more than two first radiators, the second heat dissipating layer is set between the first adjacent radiator.
8. a kind of solid welding procedure of heat radiation chip according to one of claim 1-7, which is characterized in that described 2）It dissipates
Further include the assembly of the second radiator after the installation step of hot chip, the assembly of second radiator is specially：
On the surface of heat radiation chip, the second radiator is placed, by the second radiator and the heat radiation chip assembly connection.
9. a kind of solid welding procedure of heat radiation chip according to claim 8, which is characterized in that the second heat dissipation dress
It sets and welding procedure is connect by eutectic with the heat radiation chip connect, pass through slicker solder between second radiator and heat radiation chip
Alloy pulp connects.
10. a kind of solid welding procedure of heat radiation chip according to claim 8, which is characterized in that second heat dissipation
There is metal layer the outer surface of device.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111299798A (en) * | 2020-03-06 | 2020-06-19 | 惠州锂威新能源科技有限公司 | Novel pole piece tab welding process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02278856A (en) * | 1989-04-20 | 1990-11-15 | Nec Corp | Semiconductor integrated circuit device |
| JP2004014735A (en) * | 2002-06-06 | 2004-01-15 | Toyo Tanso Kk | Heat sink |
| CN1949489A (en) * | 2006-11-15 | 2007-04-18 | 重庆邮电大学 | LED chip radiator and mfg. method thereof |
| CN104851854A (en) * | 2015-05-15 | 2015-08-19 | 东莞市闻誉实业有限公司 | Chip cooling assembly |
| US9196600B2 (en) * | 2012-03-13 | 2015-11-24 | Ableprint Technology Co., Ltd. | Device and method for chip pressing |
| CN106876267A (en) * | 2015-12-11 | 2017-06-20 | 中国航空工业集团公司雷华电子技术研究所 | A kind of ltcc substrate component and its eutectic sintering process method |
-
2018
- 2018-05-09 CN CN201810439165.7A patent/CN108581168B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02278856A (en) * | 1989-04-20 | 1990-11-15 | Nec Corp | Semiconductor integrated circuit device |
| JP2004014735A (en) * | 2002-06-06 | 2004-01-15 | Toyo Tanso Kk | Heat sink |
| CN1949489A (en) * | 2006-11-15 | 2007-04-18 | 重庆邮电大学 | LED chip radiator and mfg. method thereof |
| US9196600B2 (en) * | 2012-03-13 | 2015-11-24 | Ableprint Technology Co., Ltd. | Device and method for chip pressing |
| CN104851854A (en) * | 2015-05-15 | 2015-08-19 | 东莞市闻誉实业有限公司 | Chip cooling assembly |
| CN106876267A (en) * | 2015-12-11 | 2017-06-20 | 中国航空工业集团公司雷华电子技术研究所 | A kind of ltcc substrate component and its eutectic sintering process method |
Non-Patent Citations (1)
| Title |
|---|
| 陈颖等: "芯片粘接空洞对功率器件散热特性的影响", 《半导体技术》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111299798A (en) * | 2020-03-06 | 2020-06-19 | 惠州锂威新能源科技有限公司 | Novel pole piece tab welding process |
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