CN108573961A - A kind of ultra high density mounted type COB area light source and its manufacturing method - Google Patents

A kind of ultra high density mounted type COB area light source and its manufacturing method Download PDF

Info

Publication number
CN108573961A
CN108573961A CN201810699797.7A CN201810699797A CN108573961A CN 108573961 A CN108573961 A CN 108573961A CN 201810699797 A CN201810699797 A CN 201810699797A CN 108573961 A CN108573961 A CN 108573961A
Authority
CN
China
Prior art keywords
substrate
electrode
light source
high density
ultra high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810699797.7A
Other languages
Chinese (zh)
Inventor
陈天德
林建辉
黄泽语
陈秀莲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZhuHai Hongke Optoelectronic Co Ltd
Original Assignee
ZhuHai Hongke Optoelectronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZhuHai Hongke Optoelectronic Co Ltd filed Critical ZhuHai Hongke Optoelectronic Co Ltd
Priority to CN201810699797.7A priority Critical patent/CN108573961A/en
Publication of CN108573961A publication Critical patent/CN108573961A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

A kind of ultra high density mounted type COB area light source and its manufacturing method, the ultra high density mounted type COB area light source includes substrate, the substrate is equipped with box dam, is fixed with multiple LED chips on the inside of box dam, the upper surface of the substrate is additionally provided with two front electrodes being connected with LED chip;The lower surface of the substrate is equipped with the backplate being connected respectively with two front electrodes.The packaging method of electrode is arranged using bottom by the present invention, and fast and easy powers on use.

Description

A kind of ultra high density mounted type COB area light source and its manufacturing method
Technical field
The present invention relates to area source technical field, especially a kind of ultra high density mounted type COB area light source and its manufacturer Method.
Background technology
COB area light source is the mirror metal substrate or ceramics that LED chip is placed directly against to high reflecting rate by COB technologies Specular removal on substrate integrates area source, compared to traditional LED, COB techniques without holder, electroless plating, without Reflow Soldering process, at Originally greatly reduce, be increasingly becoming the development priority of LED industry.
Existing COB area light source, positive and negative electrode are all integrally fixed at the upper surface of COB area light source, are using COB light source When, it needs conducting wire to be welded on positive and negative electrode to introduce electric current, welding process itself is relatively complicated, and COB area light source powers on The area very little of pole, just further adds operational inconvenience, and the inconvenience of this mode of connection also limits COB area light source It is applied in combination.
Invention content
Electrode is arranged using bottom in a kind of ultra high density mounted type COB area light source of present invention offer and its manufacturing method Packaging method, fast and easy power on use.
According to the first aspect of the invention, the present invention provides a kind of ultra high density mounted type COB area light source, including substrate, The substrate is equipped with box dam, is fixed with multiple LED chips on the inside of box dam, the upper surface of the substrate is additionally provided with two and LED The connected front electrode of chip;The lower surface of the substrate is equipped with the backplate being connected respectively with two front electrodes.
Preferably, the substrate is equipped with perforative through-hole, and conductor adapting piece, the conductor connection are equipped in the through-hole The both ends of part are connected with front electrode and backplate respectively.
Preferably, the through-hole is plated through-hole.
Preferably, the lower surface of the substrate is coated with welding resistance oil reservoir, and the welding resistance oil reservoir is equipped with multiple grooves, the back of the body Face electrode is arranged in the groove.
Preferably, welding electrode is additionally provided in the groove, the welding electrode is connected with backplate, the welding electricity The surface of pole is equipped with tin coating.
Preferably, the area of the tin coating is less than the area of welding electrode, and the surface of the welding electrode is in tin coating Outside be equipped with nickel-gold layer.
Preferably, the surface of the backplate is equipped with nickel-gold layer.
According to the second aspect of the invention, the present invention provides a kind of manufacturing method of ultra high density mounted type COB area light source, Include the following steps:Multiple through-holes through substrate are opened up on substrate;Surface and through-hole to substrate carry out metalized; Layers of copper is thickeied in substrate surface, dry film is fixed in the thickening layers of copper of substrate back;It paints, is formed on dry film pre- by film light If groove;Backplate is plated in groove;Remove remaining dry film, welding resistance oil reservoir is coated in substrate back;After film light is painted, dew Go out backplate;Overleaf heavy nickel-gold layer on electrode;LED chip is fixed on substrate front side, the outside setting of LED chip is enclosed Dam, the front electrode that the setting of box dam outside is connected with LED chip, the through-hole and backplate phase that front electrode passes through metallization Even.
Preferably, removing remaining dry film, before substrate back coats welding resistance oil reservoir, further including:In partial rear electricity It is extremely upper that tin coating is set.
In the present invention, the lower surface of substrate is equipped with backplate, and backplate is connected with LED chip, overleaf on electrode Loading current can also drive LED chip to light.Overleaf due to electrode setting, directly electrode welding can be fixed, compared to The mode of existing conducting wire welding, greatly improves convenience.Preset conducting wire, the entire faces COB light can be set on stationary plane Source is directly anchored in conducting wire, is formed various combination, is facilitated and COB area light source is applied in combination.
Description of the drawings
Fig. 1 is the sectional view of the ultra high density mounted type COB area light source of an embodiment of the present invention;
Fig. 2 is the schematic rear view of the ultra high density mounted type COB area light source of an embodiment of the present invention;
Fig. 3 is the structural schematic diagram that the ultra high density mounted type COB area light source of an embodiment of the present invention is applied in combination;
Fig. 4 is structural schematic diagram of the substrate of an embodiment of the present invention after trepanning;
Fig. 5 is the substrate of an embodiment of the present invention through thickening layers of copper treated structural schematic diagram;
Fig. 6 is the structural schematic diagram of the coating welding resistance oil reservoir metacoxal plate of an embodiment of the present invention;
Fig. 7 is the structural schematic diagram of the heavy nickel-gold layer metacoxal plate of an embodiment of the present invention.
Specific implementation mode
Below by specific implementation mode combination attached drawing, invention is further described in detail.
The present invention provides a kind of ultra high density mounted type COB area light source, as shown in Figure 1 comprising substrate 1, substrate 1 can be adopted Use ceramic material.Box dam 11 is equipped on the substrate 1, box dam 11 encloses a circular trough, is fixed in circular trough more A LED chip 10, LED chip 10 is fixed on substrate 1, and can be linked together by gold thread.In the upper surface of the substrate 1 Two front electrodes being connected with LED chip 10 21 are additionally provided with, front electrode 21 can be located at the outside of box dam 11.Two front electricity Pole is positive positive electrode and front negative sense electrode respectively, front forward direction electrode and front negative sense electrode respectively with LED chip Both ends are connected, and the loading power between positive positive electrode and front negative sense electrode can be such that LED chip 10 lights.Meanwhile institute The lower surface for stating substrate 1 is equipped with the backplate 31 being connected respectively with two front electrodes 21.Backplate 31 include the back side just To electrode and back side negative sense electrode, back side forward direction electrode and back side negative sense electrode respectively with the positive electrode in corresponding front and front Negative sense electrode is connected.Backplate 31 can be arranged it is multiple, with corresponding front electrode 21 be connected.
When using the COB light source of the present embodiment, directly the backplate 31 at the COB light source back side is weldingly fixed on accordingly Wiring point, to introduce electric current.It no longer needs to introduce power supply by way of the welding lead on front electrode 21.Such as Fig. 3 institutes Show, stationary plane 100 is equipped with two conducting wires 101, and conducting wire 101 can be loaded with the conductive bar of electric current, along pre- Determine direction extension.The spacing of spacing and two backplates 31 between two conducting wires 101 matches, and can pass through spot welding etc. Two backplates 31 are respectively welded fixed in two conducting wires 101 means.Two conducting wires 101 are respectively as electricity The anode and cathode in source, to which power supply is introduced COB light source, COB light source can shine.It, can according to the trend of conducting wire 101 Sequentially to fix multiple COB area light sources, facilitates and multiple COB area light sources are applied in combination.
In one embodiment, the substrate 1 is equipped with perforative through-hole 20, and being equipped with conductor in the through-hole 20 connects The both ends of part, the conductor adapting piece are connected with front electrode 21 and backplate 31 respectively so that backplate 31 and LED core Piece 10 is electrically connected.
Further, the through-hole 20 is plated through-hole, and through-hole 20 after forming, by metalized, makes through-hole 20 Inside it is attached with conductive metallic object.
In one embodiment, the lower surface of the substrate 1 is coated with welding resistance oil reservoir 4, and the welding resistance oil reservoir 4 is equipped with multiple Groove, the backplate 31 are arranged in the groove.Welding resistance oil reservoir 4 can prevent 31 unlapped region of backplate into Row welding, only can be welded to precalculated position by backplate 31.
In one embodiment, the partial rear electrode in the groove forms welding electrode 32, the welding electrode 32 It integrated can be connected with backplate 31, be equipped with tin coating 6 on the surface of the welding electrode 32, can conveniently be welded on tin plating Adhesion on layer 6 facilitates welding to operate.
In one embodiment, the area of the tin coating 6 is less than the area of welding electrode 32, and tin coating 6 is located at weldering The surface at the middle part of receiving electrode 32, the welding electrode 32 is equipped with nickel-gold layer 5 in the outside of tin coating 6, and nickel gold material has good Good ductility, can extend the service life of entire product.
Further, the surface of the backplate 31, which is set also, nickel-gold layer 6, is protected to backplate 31.
The embodiment of the present invention provides a kind of manufacturing method of ultra high density mounted type COB area light source, for manufacturing above-mentioned reality Apply the ultra high density mounted type COB area light source of example comprising following steps:
As shown in figure 4, opening up multiple through-holes 10 through substrate 1 on substrate 1, alumina ceramic plate can be used in substrate 1, According to electrode institute position on substrate 1, above-mentioned through-hole 10 is opened up in advance, and the mode that laser cutting can be used is cut into above-mentioned lead to Hole 10.Surface and through-hole 10 to substrate 1 carry out metalized, one layer of metal are covered in plate face, being attached in through-hole 10 can Conductive metallic object, the metallic object can fill up entire through-hole 10.As shown in figure 5, thickening layers of copper 22 on the surface of substrate 1, thicken There is opening corresponding with through-hole 10, metallic object to be stretched out from opening in layers of copper 22.In the thickening layers of copper 22 at 1 back side of substrate Fixed dry film is irradiated using the film plate with prodefined opening by UV light, pre-groove is formed on dry film, groove is along pre- Fixed path extends.Plate backplate 31 in groove, backplate 31 has multiple, and is connected with each other in a groove.Such as Fig. 6 It is shown, remove remaining dry film, in 1 backside coating welding resistance oil reservoir 4 of substrate, backplate 31 is also coated on interior by welding resistance oil reservoir 4. Identical film plate in step before use is irradiated by UV light, and welding resistance oil reservoir 4 forms multiple grooves, make backplate 31 from Expose in the groove of welding resistance oil reservoir 4.Later, as shown in fig. 7, overleaf sinking nickel-gold layer 5 on electrode 31.
After completing above-mentioned steps, LED chip 10 will be packaged.Specifically, multiple LED chips 10 are fixed on substrate Box dam 11 is arranged in the outside in 1 front, LED chip 10, and the front electrode being connected with LED chip 10 is arranged in the outside of box dam 11 21, two front electrodes 21 are positive positive electrode and front negative sense electrode respectively, front forward direction electrode and front negative sense electrode It is connected respectively with the both ends of LED chip 10.Two front electrodes 21 pass through the through-hole of metallization and two backplates 31 respectively It is connected.
Further, removing remaining dry film, further including following steps before substrate back coats welding resistance oil reservoir: Tin coating 6 is set on partial rear electrode 31, is used as welding electrode 32, the setting of tin coating 6 welding a part of backplate 31 On receiving electrode 32, to facilitate solder to be fixed on welding electrode 32.
The above content is combining, specific embodiment is made for the present invention to be further described, and it cannot be said that this hair Bright specific implementation is confined to these explanations.For those of ordinary skill in the art to which the present invention belongs, it is not taking off Under the premise of from present inventive concept, a number of simple deductions or replacements can also be made.

Claims (9)

1. a kind of ultra high density mounted type COB area light source, it is characterised in that:
Including substrate, the substrate is equipped with box dam, is fixed with multiple LED chips on the inside of box dam, the upper surface of the substrate is also If there are two the front electrodes being connected with LED chip;The lower surface of the substrate, which is equipped with, to be respectively connected with two front electrodes Backplate.
2. ultra high density mounted type COB area light source according to claim 1, it is characterised in that:
The substrate is equipped with perforative through-hole, and conductor adapting piece, the both ends point of the conductor adapting piece are equipped in the through-hole It is not connected with front electrode and backplate.
3. ultra high density mounted type COB area light source according to claim 2, it is characterised in that:
The through-hole is plated through-hole.
4. ultra high density mounted type COB area light source according to claim 1, it is characterised in that:
The lower surface of the substrate is coated with welding resistance oil reservoir, and the welding resistance oil reservoir is equipped with multiple grooves, the backplate setting In the groove.
5. ultra high density mounted type COB area light source according to claim 4, it is characterised in that:
Welding electrode is additionally provided in the groove, the welding electrode is connected with backplate, and the surface of the welding electrode is set There is tin coating.
6. ultra high density mounted type COB area light source according to claim 5, it is characterised in that:
The area of the tin coating is less than the area of welding electrode, and the surface of the welding electrode is equipped with nickel in the outside of tin coating Layer gold.
7. ultra high density mounted type COB area light source according to claim 4, it is characterised in that:
The surface of the backplate is equipped with nickel-gold layer.
8. a kind of manufacturing method of ultra high density mounted type COB area light source, which is characterized in that include the following steps:
Multiple through-holes through substrate are opened up on substrate;Surface and through-hole to substrate carry out metalized;In substrate table Face thickeies layers of copper, and dry film is fixed in the thickening layers of copper of substrate back;It is painted by film light, forms pre-groove on dry film; Backplate is plated in groove;Remove remaining dry film, welding resistance oil reservoir is coated in substrate back;After film light is painted, expose the back side Electrode;Overleaf heavy nickel-gold layer on electrode;LED chip is fixed on substrate front side, box dam, box dam is arranged in the outside of LED chip The front electrode being connected with LED chip is arranged in outside, and front electrode is connected by the through-hole of metallization with backplate.
9. according to the method described in claim 8, it is characterized in that:
Removing remaining dry film, before substrate back coats welding resistance oil reservoir, is further including:It is arranged on partial rear electrode tin plating Layer.
CN201810699797.7A 2018-06-29 2018-06-29 A kind of ultra high density mounted type COB area light source and its manufacturing method Pending CN108573961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810699797.7A CN108573961A (en) 2018-06-29 2018-06-29 A kind of ultra high density mounted type COB area light source and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810699797.7A CN108573961A (en) 2018-06-29 2018-06-29 A kind of ultra high density mounted type COB area light source and its manufacturing method

Publications (1)

Publication Number Publication Date
CN108573961A true CN108573961A (en) 2018-09-25

Family

ID=63573610

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810699797.7A Pending CN108573961A (en) 2018-06-29 2018-06-29 A kind of ultra high density mounted type COB area light source and its manufacturing method

Country Status (1)

Country Link
CN (1) CN108573961A (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101951735A (en) * 2010-09-17 2011-01-19 深圳市集锦线路板科技有限公司 Coppering and porefilling process for circuit board
CN102365001A (en) * 2011-06-30 2012-02-29 广东达进电子科技有限公司 Manufacture method for multiple surface treatments on one board
CN103400833A (en) * 2013-07-29 2013-11-20 深圳市天电光电科技有限公司 Led module and manufacturing method thereof
CN103579477A (en) * 2013-11-04 2014-02-12 上海大学 Light emitting diode flip chip packaging method based on through hole technology
CN205960027U (en) * 2016-07-27 2017-02-15 佛山市国星光电股份有限公司 COB light source and collection moulding piece and lamps and lanterns
CN107041077A (en) * 2017-04-27 2017-08-11 广东依顿电子科技股份有限公司 A kind of circuit board producing method of turmeric and the golden compound base amount method of electricity
CN208637418U (en) * 2018-06-29 2019-03-22 珠海市宏科光电子有限公司 A kind of ultra high density mounted type COB area light source

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101951735A (en) * 2010-09-17 2011-01-19 深圳市集锦线路板科技有限公司 Coppering and porefilling process for circuit board
CN102365001A (en) * 2011-06-30 2012-02-29 广东达进电子科技有限公司 Manufacture method for multiple surface treatments on one board
CN103400833A (en) * 2013-07-29 2013-11-20 深圳市天电光电科技有限公司 Led module and manufacturing method thereof
CN103579477A (en) * 2013-11-04 2014-02-12 上海大学 Light emitting diode flip chip packaging method based on through hole technology
CN205960027U (en) * 2016-07-27 2017-02-15 佛山市国星光电股份有限公司 COB light source and collection moulding piece and lamps and lanterns
CN107041077A (en) * 2017-04-27 2017-08-11 广东依顿电子科技股份有限公司 A kind of circuit board producing method of turmeric and the golden compound base amount method of electricity
CN208637418U (en) * 2018-06-29 2019-03-22 珠海市宏科光电子有限公司 A kind of ultra high density mounted type COB area light source

Similar Documents

Publication Publication Date Title
JP5992396B2 (en) Solar cell and method of manufacturing solar cell
US20110121326A1 (en) Submount Having Reflective Cu-Ni-Ag Pads Formed Using Electroless Deposition
CN1305132C (en) Lead frame and its electroplating method
CN208637418U (en) A kind of ultra high density mounted type COB area light source
US8809082B2 (en) Method for producing lamps
US20100307799A1 (en) Carrier Structure for Electronic Components and Fabrication Method of the same
WO2006023028A1 (en) Solderable metal finich for integrated circuit package leads and method for forming
CN101248556B (en) Microminiature contact and method for manufacturing same, and electronic component
CN102032483A (en) Light-emitting diode (LED) plane light source
KR20050107625A (en) Process for producing electronic component and electronic component
JPH09293904A (en) Led package
JP2008277349A (en) Base for mounting light-emitting element, and its manufacturing method, and light-emitting element
CN109253406A (en) The production technology of LED filament, lamps and lanterns and LED filament
JP2012212850A (en) Lead frame for led and manufacturing method therefor
CN108573961A (en) A kind of ultra high density mounted type COB area light source and its manufacturing method
CN206164982U (en) Golden finger, printed circuit board and be used for making printed circuit board's base plate
JP2012107263A (en) Plating structure and coating method
CN107342354B (en) A kind of IC package technique
JP2020526935A (en) Reflective composites, especially for surface mount devices (SMDs) and light emitting devices with this type of composite
CN112996239A (en) PCB with SMT bonding pads on side edges and manufacturing method
JP2006269703A (en) Ceramic package for light emitting element and its manufacturing method
CN103441116A (en) Semiconductor package piece and manufacturing method thereof
JP2018022835A (en) Member for electronic component, led package, and led module
CN1964089A (en) A method for packaging LED on transparent soft thin film substrate
CN109161944A (en) A kind of LED support electro-plating method and LED support

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination