CN108572490A - A kind of device and method generating reversed Cerenkov radiation - Google Patents
A kind of device and method generating reversed Cerenkov radiation Download PDFInfo
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- CN108572490A CN108572490A CN201710146604.0A CN201710146604A CN108572490A CN 108572490 A CN108572490 A CN 108572490A CN 201710146604 A CN201710146604 A CN 201710146604A CN 108572490 A CN108572490 A CN 108572490A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/374—Cherenkov radiation
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Abstract
The invention discloses a kind of device and method generating reversed Cerenkov radiation, which includes：Substrate；Positioned at the dielectric layer of substrate surface, the relative dielectric constant of dielectric layer is negative, and relative permeability is positive number；Charged particle emitter, charged particle emitter are used to generate the charged particle of default initial velocity；When device is for when generating reversed Cerenkov radiation, surface of the charged particle emitter for making the parallel incident medium layer of charged particle, so that the surface for being oriented parallel to dielectric layer of initial velocity, and make the surface of charged particle and dielectric layer that there is the gap less than preset height；Charged particle has encouraged the surface electromagnetic wave along dielectric layer surface parallel transmission；By adjusting initial velocity, the thickness of dielectric layer and the electromagnetic parameter of dielectric layer so that surface wave is the backward-wave that speed is less than initial velocity, forms reversed Cerenkov radiation.Technical solution of the present invention is not necessarily to double negative media and reversed Cerenkov radiation can be realized.
Description
Technical field
The present invention relates to electromagnetism technical fields, more specifically, being related to a kind of dress generating reversed Cerenkov radiation
It sets and method.
Background technology
Cerenkov radiation (Cherenkov radiation) refers to when the movement velocity of charged particle is more than surrounding media
In the light velocity in the case of a kind of electromagnetic radiation phenomenon for generating, it is in high-energy physics, cosmic ray physics, electromagnetism spoke
Penetrating the fields such as source has important application, is global hot research problem from self-discovery.
When medium is nondispersive medium, the direction of Cerenkov radiation field concentrates on specific direction (i.e. the directions θ), and
Meet Cerenkov radiation angle formula：
θ is the angle of radiation direction and Particles Moving direction in formula (1), and v is Particles Moving speed, and c is in vacuum
The light velocity,It is the refractive index of medium, ε is medium relative dielectric constant.In the Nature, the opposite dielectric of normal medium is normal
Number is all positive number, therefore the deflection θ of Cerenkov radiation is less than 90 degree, i.e., radiation direction is before charging particle movement direction
To.
Theoretical and experiment shows that the relative dielectric constant and relative permeability when medium are negative (refractive index at this time
For negative) in the case of, the deflection θ of Cerenkov radiation will be greater than 90 degree, and radiation direction is in charging particle movement direction
Reversely, i.e., reversed Cerenkov radiation.Reversed Cerenkov radiation has in development electromagnetic radiation source and new optical devices
Important application prospect.In the prior art, only by relative dielectric constant and relative permeability it is double negative media of negative
It could realize reversed Cerenkov radiation.
Invention content
To solve the above-mentioned problems, an embodiment of the present invention provides a kind of device generating reversed Cerenkov radiation and
Reversed Cherenkov's spoke can be realized without double negative dielectric layers that relative dielectric constant and relative permeability are negative in method
It penetrates.
To achieve the goals above, the present invention provides the following technical solutions：
A kind of device generating reversed Cerenkov radiation, described device include：
Substrate；
Positioned at the dielectric layer of substrate surface, the relative dielectric constant of the dielectric layer is negative, and relative permeability is just
Number；
Charged particle emitter, the charged particle emitter are used to generate the charged particle of default initial velocity；
When described device is for when generating reversed Cerenkov radiation, the charged particle emitter to be for so that with electrochondria
The surface of the parallel incidence dielectric layer of son so that the surface for being oriented parallel to the dielectric layer of the initial velocity, and make
The surface of the charged particle and the dielectric layer has the gap less than preset height；The charged particle has been encouraged along described
The surface electromagnetic wave of dielectric layer surface parallel transmission；By adjusting the thickness of the initial velocity, the dielectric layer and being given an account of
The electromagnetic parameter of matter layer so that the surface wave is the backward-wave that speed is less than the initial velocity, forms reversed Cherenkov's spoke
It penetrates.
Preferably, in above-mentioned apparatus, the height in the gap is less than 0.1 μm.
Preferably, in above-mentioned apparatus, the dielectric layer is artificial meta-material thin film, the frequency packet of the surface electromagnetic wave
Include 0.1THz-10TH, including endpoint value.
Preferably, in above-mentioned apparatus, the thickness of the dielectric layer is 0.01mm-0.1mm, including endpoint value.
Preferably, in above-mentioned apparatus, the dielectric layer is gold thin film or Ag films, the frequency of the surface electromagnetic wave
Rate includes visible frequency.
Preferably, in above-mentioned apparatus, the thickness of the dielectric layer is 10nm-30nm, including endpoint value.
Preferably, in above-mentioned apparatus, the substrate is insulating materials, the relative dielectric constant ranging from 2- of the substrate
5, including endpoint value.
Preferably, in above-mentioned apparatus, the substrate is substrate of glass or ceramic bases.
The present invention also provides a kind of method generating reversed Cerenkov radiation, the method includes：
So that charged particle is provided with the top of dielectric layer with preset initial velocity by surface, the charged particle is parallel
The surface of the incident dielectric layer, the surface for being oriented parallel to the dielectric layer of the initial velocity, and the charged particle with
The surface of the dielectric layer has the gap less than preset height；The charged particle has encouraged parallel along the dielectric layer surface
The surface electromagnetic wave of transmission；By adjusting the initial velocity, the thickness of the dielectric layer and the electromagnetic parameter of the dielectric layer,
So that the surface wave is the backward-wave that speed is less than the initial velocity, reversed Cerenkov radiation is formed.
By foregoing description it is found that the device and method for the reversed Cerenkov radiation of generation that technical solution of the present invention provides
In, use relative dielectric constant for radiation and dielectric layer that relative permeability is positive number, by adjust the initial velocity, it is described between
The electromagnetic parameter of the height of gap and the dielectric layer so that the surface wave is the backward-wave that speed is less than the initial velocity,
Reversed Cerenkov radiation is formed, can be realized instead without double negative media that relative dielectric constant and relative permeability are negative
To Cerenkov radiation.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of device generating reversed Cerenkov radiation provided in an embodiment of the present invention；
Fig. 2 is side view when Fig. 1 shown devices generate reversed Cerenkov radiation；
Fig. 3 is vertical view when Fig. 1 shown devices generate reversed Cerenkov radiation；
Fig. 4 is a kind of opposite relative dielectric constant that theoretical calculation obtains provided in an embodiment of the present invention and with respect to magnetic
Conductance with frequency variation relation curve graph；
The frequency for the Cerenkov radiation that Fig. 5 is a kind of theoretical calculation provided in an embodiment of the present invention and test simulation obtains
With the variation relation curve graph of angle of radiation；
Fig. 6 is the opposite relative dielectric constant that another theoretical calculation provided in an embodiment of the present invention obtains and relatively
Magnetic conductivity with frequency variation relation curve graph；
The frequency for the Cerenkov radiation that Fig. 7 is another theoretical calculation provided in an embodiment of the present invention and test simulation obtains
Rate with angle of radiation variation relation curve graph.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
With reference to figure 1- Fig. 3, Fig. 1 is a kind of device generating reversed Cerenkov radiation provided in an embodiment of the present invention, Fig. 2
Side view when reversed Cerenkov radiation is generated for Fig. 1 shown devices, Fig. 3 is that Fig. 1 shown devices generate reversed Cherenkov
Vertical view when radiation.
The device includes：Substrate 2；The relative dielectric constant of dielectric layer 1 positioned at 2 surface of substrate, the dielectric layer 1 is negative
Number, and relative permeability is positive number；Charged particle emitter 5, the charged particle emitter 5 is for generating default initial velocity
Charged particle 3.
When described device is for when generating reversed Cerenkov radiation, the charged particle emitter 5 to be for so that electrification
The surface of 3 parallel incidence of the particle dielectric layer 1 so that the surface for being oriented parallel to the dielectric layer 1 of the initial velocity, and
So that the surface of the charged particle 3 and the dielectric layer 1 has the gap less than preset height H；The charged particle 3 encourages
Play the surface electromagnetic wave along the dielectric layer surface parallel transmission；By adjust the thickness of the initial velocity, the dielectric layer 1 with
And the electromagnetic parameter of the dielectric layer 1 so that the surface wave is the backward-wave that speed is less than the initial velocity, and formation is reversely cut
Lun Kefu is radiated.
The parallel surface for skimming over dielectric layer 1 of charged particle 3.Preset height H is less than 0.1 μm.Optionally, the substrate 2 is
Insulating materials, the relative dielectric constant ranging from 2-5 of the substrate, including endpoint value.Specifically, the substrate is glass base
Bottom or ceramic bases.
In described device of the embodiment of the present invention, the dielectric layer 1 is the dielectric film with plasmon characteristic.It is logical
It crosses one layer of dielectric film with plasmon characteristic to be covered in above common medium substrate 2, at the uniform velocity charged particle 3 is flat
Row skims over the upper surface of the dielectric film, can form reversed Cerenkov radiation.The relative dielectric constant of the dielectric layer 1
For negative, relative permeability is positive number.Double negative media (relative permeability and opposite Jie can only be used in the prior art by overcoming
Electric constant is the medium of negative) formed reversed Cerenkov radiation the problem of.
Charged particle 3 plays the electromagnetic wave along 1 surface parallel transmission of dielectric layer, that is, surface in 1 surface actuator of dielectric layer
Electromagnetic wave, when movement velocity of the phase velocity that surface electromagnetic wave is transmitted with dielectric layer 1 less than electronics note, surface electromagnetic wave is by band
The direction of motion of charged particle 3 and to other directions propagate, at this point, the propagation of the direction of propagation 4 and charged particle 3 of surface electromagnetic wave
Direction has angle theta, and then forms Cerenkov radiation.
For the dielectric layer 1 of plasmon characteristic, it is anti-that the surface electromagnetic wave of generation can be that forward-wave can also be
Xiang Bo, the forward-wave refer to that phase velocity direction electromagnetic wave identical with group velocity direction, the backward-wave refer to phase velocity
Spend the direction electromagnetic wave opposite with group velocity direction.When charged particle 3 has encouraged the backward-wave of 3 movement velocity of speed charged particle
When, it is formed reversed Cerenkov radiation.
In the embodiment of the present invention, when described device forms Cerenkov radiation, it can be used for generating the electricity of Terahertz frequency
Magnetic wave.It, can be by artificial when dielectric film with plasmon characteristic is used to generate the electromagnetic wave of Terahertz frequency
Meta Materials are realized.At this point, the dielectric layer 1 is artificial meta-material thin film, the frequency of the surface electromagnetic wave is 0.1THz-
10TH, including endpoint value；The thickness of the dielectric layer 1 is 0.01mm-0.1mm, including endpoint value.
When using artificial Meta Materials as electromagnetic wave of the dielectric layer 1 to generate Terahertz frequency, the phase of artificial Meta Materials
To relative dielectric constant εγAnd opposite relative permeability μγIt can be indicated respectively by following formula (2) and formula (3).
In formula (2), ωpeIndicate that equivalent plasma electric angle frequency, ω indicate work angular frequency.γeIndicate electricity collision
Frequency.I is complex unit.
In formula (3), F is proportionality constant, ωpmIndicate equivalent plasma magnetic deviation frequency.γmIndicate magnetic collision frequency.
In the embodiment of the present invention, when described device forms Cerenkov radiation, it can be used for generating the electricity of visible frequency
Magnetic wave.It, can be by common when dielectric film with plasmon characteristic is used to generate the electromagnetic wave of Terahertz frequency
Precious metal material realize.At this point, the dielectric layer 1 is gold thin film or Ag films, the frequency of the surface electromagnetic wave includes
Visible frequency；The thickness of the dielectric layer 1 is 10nm-30nm, including endpoint value.
When using metal material as electromagnetic wave of the dielectric layer 1 to generate visible frequency, the dielectric layer 1 of metal material
Opposite relative dielectric constant can be indicated with following formula (4).
In formula (4), ωpIndicate that metallic plasma angular frequency, ω indicate work angular frequency.γ indicates metal freely electricity
Sub- magnetic collision frequency.ε∞For constant.
The opposite relative permeability of the dielectric layer 1 of metal material is 1.
Either artificial Meta Materials or metal material can make medium as dielectric layer 1 by selecting working frequency range
The opposite relative dielectric constant of layer 1 is negative, and opposite relative permeability is positive number, and such dielectric layer 1 is just operated in plasma
Excimer state.
Illustrate that reversed Cerenkov radiation may be implemented in described device of the embodiment of the present invention with reference to specific experimental example.
When dielectric layer 1 is artificial Meta Materials, following parameter is set：ωpe=2 π × 500 × 109, ωpm=2 π × 219 ×
109, γe=1010, γm=1010, the thickness of F=0.5, dielectric layer 1 are 0.05mm, and the relative dielectric constant of substrate 2 is 2.25,
The energy of charged particle 3 is 80 kiloelectron-volts, by the initial velocity for controlling its outgoing of the energy hole of charged particle 3.At this point, reason
By the opposite relative dielectric constant being calculated and opposite relative permeability with the variation relation of frequency as shown in figure 4, theoretical count
The frequency for calculating the Cerenkov radiation obtained with test simulation is as shown in Figure 5 with the variation relation of angle of radiation.
In Fig. 4, curve 11 indicates that opposite relative dielectric constant, curve 12 indicate opposite relative permeability.As shown in Figure 4,
In frequency out of 300GHz-500GHz, the opposite relative dielectric constant of dielectric layer 1 is negative, and opposite relative permeability is
Positive number, dielectric layer 1 is plasmon film at this time.
As shown in Figure 5, angle theta is more than 90 ° of reversed Cerenkov radiations of generation, when frequency is more than 400GHz, realizes anti-
To Cerenkov radiation.
When dielectric layer is metal material, following parameter is set：ε∞=4.5, ωp=1.39 × 1016, γ=3.2 ×
1013, the thickness of dielectric layer 1 is 20nm, and the relative dielectric constant of substrate 2 is 2.25, and the energy of charged particle 3 is 40,000 electronics
Volt.At this point, the variation relation such as Fig. 6 institutes of opposite relative dielectric constant and opposite relative permeability that theoretical calculation obtains with frequency
Show, the frequency for the Cerenkov radiation that theoretical calculation and test simulation obtain is as shown in Figure 7 with the variation relation of angle of radiation.
It will be appreciated from fig. 6 that in frequency less than within the scope of 950THz, the opposite relative dielectric constant of dielectric layer 1 is negative, at this time
Dielectric layer 1 is plasmon film.
As shown in Figure 7, angle theta is more than 90 ° of reversed Cerenkov radiations of generation, real when frequency is 900THz-950THz
Now reversed Cerenkov radiation.
In described device of the embodiment of the present invention, by adjusting the initial velocity of charged particle 3, the electromagnetism of the dielectric layer 1 is joined
At least one of the thickness of the several and described dielectric layer 1 realizes the adjusting to surface electromagnetic wave frequency, radiation direction, realizes
Reversed Cerenkov radiation.The electromagnetic parameter of the dielectric layer 1 includes the relative dielectric constant and relative magnetic permeability of dielectric layer 1
Rate.As it can be seen that described device is simple in structure, control method is simple, is easy to implement reversed Cerenkov radiation.
Based on above-described embodiment, another embodiment of the present invention additionally provides a kind of side generating reversed Cerenkov radiation
Method realizes that reversed Cerenkov radiation, this method include using above-mentioned apparatus：
So that charged particle is provided with the top of dielectric layer with preset initial velocity by surface, the charged particle is parallel
The surface of the incident dielectric layer, the initial velocity are oriented parallel to the dielectric layer surface, and the charged particle and institute
The surface for stating dielectric layer has the gap for being less than preset height；The charged particle has encouraged biography parallel along the dielectric layer surface
Defeated surface electromagnetic wave；By adjusting the initial velocity, the thickness of the dielectric layer and the electromagnetic parameter of the dielectric layer, make
It is the backward-wave that speed is less than the initial velocity to obtain the surface wave, forms reversed Cerenkov radiation.
The method of the embodiment of the present invention realizes reversed Cerenkov radiation using above-mentioned apparatus, easy to operate, convenient for real
It is existing, and without double negative dielectric materials.
Each embodiment is described by the way of progressive in this specification, the highlights of each of the examples are with other
The difference of embodiment, just to refer each other for identical similar portion between each embodiment.For method disclosed in embodiment
For, since it is corresponding with device disclosed in embodiment, so description is fairly simple, related place is said referring to device part
It is bright.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (9)
1. a kind of device generating reversed Cerenkov radiation, which is characterized in that including：
Substrate；
Positioned at the dielectric layer of substrate surface, the relative dielectric constant of the dielectric layer is negative, and relative permeability is positive number；
Charged particle emitter, the charged particle emitter are used to generate the charged particle of default initial velocity；
When described device is for when generating reversed Cerenkov radiation, the charged particle emitter to be for so that charged particle is flat
The surface of the incident dielectric layer of row so that the surface for being oriented parallel to the dielectric layer of the initial velocity, and make described
The surface of charged particle and the dielectric layer has the gap less than preset height；The charged particle has been encouraged along the medium
The surface electromagnetic wave of layer surface parallel transmission；Pass through the thickness for adjusting the initial velocity, the dielectric layer and the dielectric layer
Electromagnetic parameter so that the surface wave be speed be less than the initial velocity backward-wave, form reversed Cerenkov radiation.
2. the apparatus according to claim 1, which is characterized in that the height in the gap is less than 0.1 μm.
3. the apparatus according to claim 1, which is characterized in that the dielectric layer is artificial meta-material thin film, the surface
The frequency of electromagnetic wave includes 0.1THz-10TH, including endpoint value.
4. device according to claim 3, which is characterized in that the thickness of the dielectric layer is 0.01mm-0.1mm, including
Endpoint value.
5. the apparatus according to claim 1, which is characterized in that the dielectric layer is gold thin film or Ag films, the table
The frequency of face electromagnetic wave includes visible frequency.
6. device according to claim 5, which is characterized in that the thickness of the dielectric layer is 10nm-30nm, including endpoint
Value.
7. the apparatus according to claim 1, which is characterized in that the substrate is insulating materials, opposite Jie of the substrate
Electric constant ranging from 2-5, including endpoint value.
8. device according to claim 7, which is characterized in that the substrate is substrate of glass or ceramic bases.
9. a kind of method generating reversed Cerenkov radiation, which is characterized in that including：
So that charged particle is provided with the top of dielectric layer with preset initial velocity by surface, the parallel incidence of the charged particle
The surface of the dielectric layer, the surface for being oriented parallel to the dielectric layer of the initial velocity, and the charged particle with it is described
The surface of dielectric layer has the gap less than preset height；The charged particle has been encouraged along the dielectric layer surface parallel transmission
Surface electromagnetic wave；By adjusting the initial velocity, the thickness of the dielectric layer and the electromagnetic parameter of the dielectric layer so that
The surface wave is the backward-wave that speed is less than the initial velocity, forms reversed Cerenkov radiation.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600971A (en) * | 2019-08-30 | 2019-12-20 | 武汉邮电科学研究院有限公司 | Method and system for generating surface phonon excimer Cerenkov radiation |
| CN114552332A (en) * | 2022-01-17 | 2022-05-27 | 清华大学 | Cerenkov infrared radiation source and free electron light source based on natural hyperbolic material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496678A (en) * | 2011-12-21 | 2012-06-13 | 电子科技大学 | Tunable Cerenkov radiation source |
| CN102593692A (en) * | 2011-12-21 | 2012-07-18 | 电子科技大学 | Cerenkov radiation source of surface plasma waves |
| CN106486754A (en) * | 2016-10-13 | 2017-03-08 | 东南大学 | A kind of Qie Lunkefu radiation appliance based on artificial surface phasmon |
-
2017
- 2017-03-13 CN CN201710146604.0A patent/CN108572490B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102496678A (en) * | 2011-12-21 | 2012-06-13 | 电子科技大学 | Tunable Cerenkov radiation source |
| CN102593692A (en) * | 2011-12-21 | 2012-07-18 | 电子科技大学 | Cerenkov radiation source of surface plasma waves |
| CN106486754A (en) * | 2016-10-13 | 2017-03-08 | 东南大学 | A kind of Qie Lunkefu radiation appliance based on artificial surface phasmon |
Non-Patent Citations (1)
| Title |
|---|
| JIN TAO ET AL: "Reverse surface-polariton cherenkov radiation", 《SCIENTIFIC REPORTS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600971A (en) * | 2019-08-30 | 2019-12-20 | 武汉邮电科学研究院有限公司 | Method and system for generating surface phonon excimer Cerenkov radiation |
| CN110600971B (en) * | 2019-08-30 | 2020-09-15 | 武汉邮电科学研究院有限公司 | Method and system for generating surface phonon excimer Cerenkov radiation |
| CN114552332A (en) * | 2022-01-17 | 2022-05-27 | 清华大学 | Cerenkov infrared radiation source and free electron light source based on natural hyperbolic material |
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| CN108572490B (en) | 2020-04-17 |
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