CN108572490B - Device and method for generating reverse Cerenkov radiation - Google Patents

Device and method for generating reverse Cerenkov radiation Download PDF

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CN108572490B
CN108572490B CN201710146604.0A CN201710146604A CN108572490B CN 108572490 B CN108572490 B CN 108572490B CN 201710146604 A CN201710146604 A CN 201710146604A CN 108572490 B CN108572490 B CN 108572490B
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刘维浩
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University of Science and Technology of China USTC
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/37Non-linear optics for second-harmonic generation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35Non-linear optics
    • G02F1/37Non-linear optics for second-harmonic generation
    • G02F1/374Cherenkov radiation

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Abstract

The invention discloses a device and a method for generating reverse Cerenkov radiation, wherein the device comprises: a substrate; the dielectric layer is positioned on the surface of the substrate, the relative dielectric constant of the dielectric layer is a negative number, and the relative magnetic permeability is a positive number; a charged particle emitter for generating charged particles of a preset initial velocity; when the device is used for generating reverse Cerenkov radiation, the charged particle emitter is used for enabling charged particles to be incident to the surface of the medium layer in a parallel mode, enabling the direction of the initial speed to be parallel to the surface of the medium layer, and enabling the charged particles and the surface of the medium layer to have a gap smaller than a preset height; exciting surface electromagnetic waves transmitted in parallel along the surface of the dielectric layer by the charged particles; by adjusting the initial speed, the thickness of the dielectric layer and the electromagnetic parameters of the dielectric layer, the surface wave is a reverse wave with the speed less than the initial speed, and reverse Cherenkov radiation is formed. The technical scheme of the invention can realize reverse Cerenkov radiation without double negative media.

Description

Device and method for generating reverse Cerenkov radiation
Technical Field
The invention relates to the technical field of electromagnetism, in particular to a device and a method for generating reverse Cerenkov radiation.
Background
Cerenkov radiation (Cherenkov radiation) refers to an electromagnetic radiation phenomenon generated when the moving speed of charged particles exceeds the light speed in surrounding media, and has important applications in the fields of high-energy particle physics, cosmic ray physics, electromagnetic radiation sources and the like, and is a global hot research topic since the discovery date.
When the medium is a non-dispersive medium, the direction of the Cerenkov radiation field is concentrated in a specific direction (namely a theta direction), and the Cerenkov radiation angle formula is satisfied:
Figure GDA0002388911670000011
in the formula (1), theta is the included angle between the radiation direction and the particle motion direction, v is the particle motion speed, c is the light speed in vacuum,
Figure GDA0002388911670000012
is the refractive index of the medium and ε is the relative permittivity of the medium. In nature, the relative dielectric constants of normal media are all positive, so the direction angle θ of cerenkov radiation is less than 90 degrees, i.e., the direction of radiation is forward of the direction of motion of the charged particles.
Theory and experiment show that when the relative dielectric constant and the relative magnetic permeability of the medium are both negative numbers (the refractive index is also negative at this time), the direction angle theta of cerenkov radiation is larger than 90 degrees, and the radiation direction is opposite to the motion direction of the charged particles, namely, the reverse cerenkov radiation. The reverse Cerenkov radiation has important application prospect in developing electromagnetic radiation sources and novel optical devices. In the prior art, the reverse cerenkov radiation can be realized only by a double negative medium with negative relative dielectric constant and relative magnetic permeability.
Disclosure of Invention
In order to solve the above problems, embodiments of the present invention provide an apparatus and a method for generating reverse cerenkov radiation, which can implement reverse cerenkov radiation without a double negative dielectric layer in which both the relative permittivity and the relative permeability are negative.
In order to achieve the above purpose, the invention provides the following technical scheme:
an apparatus for generating reverse cerenkov radiation, the apparatus comprising:
a substrate;
the dielectric layer is positioned on the surface of the substrate, the relative dielectric constant of the dielectric layer is a negative number, and the relative magnetic permeability of the dielectric layer is a positive number;
a charged particle emitter for generating charged particles of a preset initial velocity;
when the device is used for generating reverse Cerenkov radiation, the charged particle emitter is used for enabling charged particles to be incident on the surface of the medium layer in parallel, enabling the direction of the initial velocity to be parallel to the surface of the medium layer, and enabling the charged particles to have a gap smaller than a preset height with the surface of the medium layer; the charged particles excite surface electromagnetic waves which are transmitted in parallel along the surface of the dielectric layer; and adjusting the initial speed, the thickness of the dielectric layer and the electromagnetic parameters of the dielectric layer to enable the surface electromagnetic waves to be reverse waves with the speed smaller than the initial speed and form reverse Cherenkov radiation.
Preferably, in the above device, the height of the gap is less than 0.1 μm.
Preferably, in the above device, the dielectric layer is an artificial metamaterial thin film, and the frequency of the surface electromagnetic wave includes 0.1THz to 10THz, inclusive.
Preferably, in the above device, the dielectric layer has a thickness of 0.01mm to 0.1mm, inclusive.
Preferably, in the above device, the dielectric layer is a gold thin film or a silver thin film, and the frequency of the surface electromagnetic wave includes a visible light frequency.
Preferably, in the above device, the dielectric layer has a thickness of 10nm to 30nm, inclusive.
Preferably, in the above apparatus, the substrate is an insulating material, and the relative permittivity of the substrate is in a range of 2 to 5 inclusive.
Preferably, in the above apparatus, the substrate is a glass substrate or a ceramic substrate.
The invention also provides a method of generating reverse cerenkov radiation, the method comprising:
enabling charged particles to pass through the position above a medium layer arranged on the surface at a preset initial speed, enabling the charged particles to enter the surface of the medium layer in parallel, enabling the direction of the initial speed to be parallel to the surface of the medium layer, and enabling the charged particles and the surface of the medium layer to have a gap smaller than a preset height; the charged particles excite surface electromagnetic waves which are transmitted in parallel along the surface of the dielectric layer; and adjusting the initial speed, the thickness of the dielectric layer and the electromagnetic parameters of the dielectric layer to enable the surface electromagnetic waves to be reverse waves with the speed smaller than the initial speed and form reverse Cherenkov radiation.
As can be seen from the above description, in the device and method for generating reverse cerenkov radiation provided by the technical scheme of the present invention, a dielectric layer with a positive relative permittivity and a positive relative permeability is adopted, and by adjusting the initial velocity, the height of the gap, and the electromagnetic parameters of the dielectric layer, the surface electromagnetic wave is a reverse wave with a velocity smaller than the initial velocity, so as to form reverse cerenkov radiation, and the reverse cerenkov radiation can be realized without a double negative dielectric with both a negative relative permittivity and a negative relative permeability.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of an apparatus for generating reverse Cerenkov radiation according to an embodiment of the present invention;
FIG. 2 is a side view of the device of FIG. 1 producing reverse Cerenkov radiation;
FIG. 3 is a top view of the device of FIG. 1 producing reverse Cerenkov radiation;
FIG. 4 is a graph of the relationship between the relative permittivity and the relative permeability with frequency obtained by theoretical calculation according to an embodiment of the present invention;
fig. 5 is a graph showing a relationship between a frequency of cerenkov radiation and a change of a radiation angle, which is obtained through theoretical calculation and experimental simulation according to an embodiment of the present invention;
FIG. 6 is a graph of the relative permittivity and relative permeability as a function of frequency obtained by another theoretical calculation according to an embodiment of the present invention;
fig. 7 is a graph of the change of the frequency of cerenkov radiation with the radiation angle obtained by another theoretical calculation and experimental simulation provided by the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1 to 3, fig. 1 is a view illustrating an apparatus for generating reverse cerenkov radiation according to an embodiment of the present invention, fig. 2 is a side view illustrating the apparatus of fig. 1 generating reverse cerenkov radiation, and fig. 3 is a top view illustrating the apparatus of fig. 1 generating reverse cerenkov radiation.
The device includes: a substrate 2; the dielectric layer 1 is positioned on the surface of the substrate 2, the relative dielectric constant of the dielectric layer 1 is a negative number, and the relative magnetic permeability is a positive number; a charged particle emitter 5, said charged particle emitter 5 being adapted to generate charged particles 3 of a preset initial velocity.
When the device is used for generating reverse cerenkov radiation, the charged particle emitter 5 is used for enabling the charged particles 3 to be incident on the surface of the medium layer 1 in parallel, enabling the direction of the initial velocity to be parallel to the surface of the medium layer 1, and enabling the charged particles 3 to have a gap smaller than a preset height H with the surface of the medium layer 1; the charged particles 3 excite surface electromagnetic waves which are transmitted in parallel along the surface of the dielectric layer; by adjusting the initial speed, the thickness of the dielectric layer 1 and the electromagnetic parameters of the dielectric layer 1, the surface electromagnetic waves are made to be reverse waves with the speed smaller than the initial speed, and reverse Cherenkov radiation is formed.
The charged particles 3 sweep parallel across the surface of the dielectric layer 1. The predetermined height H is less than 0.1 μm. Optionally, the substrate 2 is an insulating material, and the relative permittivity of the substrate ranges from 2 to 5, inclusive. Specifically, the substrate is a glass substrate or a ceramic substrate.
In the device according to the embodiment of the present invention, the dielectric layer 1 is a dielectric thin film having a plasmon characteristic. A layer of dielectric film with plasmon characteristics is covered on a common dielectric substrate 2, and the uniform-speed charged particles 3 pass through the upper surface of the dielectric film in parallel, so that reverse Cerenkov radiation can be formed. The relative dielectric constant of the dielectric layer 1 is negative, and the relative magnetic permeability is positive. The problem that in the prior art, only double negative media (media with negative relative permeability and relative dielectric constant) can be adopted to form reverse Cerenkov radiation is solved.
The charged particles 3 excite electromagnetic waves which are transmitted in parallel along the surface of the dielectric layer 1 on the surface of the dielectric layer 1, namely surface electromagnetic waves, and when the phase velocity of the surface electromagnetic waves transmitted along the dielectric layer 1 is lower than the motion velocity of the electron beam, the surface electromagnetic waves propagate the motion direction of the charged particles 3 to other directions, and at the moment, the propagation direction 4 of the surface electromagnetic waves and the propagation direction of the charged particles 3 form an included angle theta, so that the Cherenkov radiation is formed.
For the dielectric layer 1 of plasmon characteristics, the generated surface electromagnetic wave may be a forward wave, which refers to an electromagnetic wave having the same phase velocity direction as the group velocity direction, or a backward wave, which refers to an electromagnetic wave having the opposite phase velocity direction from the group velocity direction. When the charged particles 3 excite a backward wave with a velocity of the charged particles 3, a backward cerenkov radiation is formed.
In the embodiment of the invention, when the device forms Cerenkov radiation, the device can be used for generating electromagnetic waves with terahertz frequency. When the dielectric film with the plasmon characteristic is used for generating electromagnetic waves with terahertz frequency, the generation can be realized through artificial metamaterials. At the moment, the dielectric layer 1 is an artificial metamaterial film, and the frequency of the surface electromagnetic wave is 0.1THz-10THz including end point values; the thickness of the dielectric layer 1 is 0.01mm-0.1mm, inclusive.
When the artificial metamaterial is adopted as the dielectric layer 1 to generate the electromagnetic wave of the terahertz frequency, the relative dielectric constant epsilon of the artificial metamaterialγAnd relative magnetic permeability muγCan be expressed by the following formula (2) and formula (3), respectively.
Figure GDA0002388911670000061
In the formula (2), ωpeRepresenting the equivalent plasma electrical angular frequency and omega the operating angular frequency. Gamma rayeIndicating the frequency of electrical collisions. i is a complex unit.
Figure GDA0002388911670000062
In the formula (3), F is a proportionality constant, ωpmRepresenting the equivalent plasma magnetic angular frequency. Gamma raymIndicating the frequency of magnetic collisions.
In embodiments of the invention, the apparatus may be used to generate electromagnetic waves at visible frequencies when forming cerenkov radiation. When the dielectric film with the plasmon characteristic is used for generating electromagnetic waves of terahertz frequency, the dielectric film can be realized by common noble metal materials. At this time, the dielectric layer 1 is a gold film or a silver film, and the frequency of the surface electromagnetic wave includes the frequency of visible light; the thickness of the dielectric layer 1 is 10nm-30nm, including the endpoint value.
When a metal material is used as the dielectric layer 1 to generate an electromagnetic wave of a visible light frequency, the relative dielectric constant of the dielectric layer 1 of the metal material can be expressed by the following formula (4).
Figure GDA0002388911670000063
In the formula (4), ωpRepresenting the metal plasma angular frequency and omega the operating angular frequency. Gamma denotes the metal free electron magnetic collision frequency. EpsilonIs a constant.
The dielectric layer 1 of metallic material has a relative magnetic permeability of 1.
No matter the medium layer 1 is made of artificial metamaterial or metal material, the relative dielectric constant of the medium layer 1 can be negative and the relative magnetic permeability can be positive by selecting the working frequency band, so that the medium layer 1 works in a plasmon state.
The following describes that the device according to the embodiment of the present invention can realize reverse cerenkov radiation by combining with specific experimental examples.
When the dielectric layer 1 is made of artificial metamaterial, the following parameters are set: omegape=2π×500×109,ωpm=2π×219×109,γe=1010,γm=1010F is 0.5, the thickness of the dielectric layer 1 is 0.05mm, the relative dielectric constant of the substrate 2 is 2.25, the energy of the charged particles 3 is 80 kev, and the control is performedThe energy of the charged particles 3 controls the initial velocity of the emission thereof. At this time, the relationship between the relative permittivity and the relative permeability obtained by theoretical calculation and the change with frequency is shown in fig. 4, and the relationship between the frequency of cerenkov radiation obtained by theoretical calculation and experimental simulation and the change with radiation angle is shown in fig. 5.
In fig. 4, a curve 11 represents the relative dielectric constant, and a curve 12 represents the relative permeability. As can be seen from fig. 4, in the frequency range from 300GHz to 500GHz, the relative dielectric constant of the dielectric layer 1 is negative, and the relative magnetic permeability is positive, and in this case, the dielectric layer 1 is a plasmon thin film.
As can be seen from fig. 5, the reverse cerenkov radiation occurs at an included angle θ greater than 90 °, and is realized when the frequency is greater than 400 GHz.
When the dielectric layer is made of metal material, the following parameters are set: epsilon=4.5,ωp=1.39×1016,γ=3.2×1013The thickness of the dielectric layer 1 is 20nm, the relative dielectric constant of the substrate 2 is 2.25, and the energy of the charged particles 3 is 40 kilo-electron volts. At this time, the relationship between the relative permittivity and the relative permeability obtained by theoretical calculation and the change with frequency is shown in fig. 6, and the relationship between the frequency of cerenkov radiation obtained by theoretical calculation and experimental simulation and the change with radiation angle is shown in fig. 7.
As can be seen from fig. 6, in the frequency range lower than 950THz, the relative dielectric constant of the dielectric layer 1 is negative, and in this case, the dielectric layer 1 is a plasmon thin film.
As can be seen from FIG. 7, the reverse Cerenkov radiation occurs at an included angle θ larger than 90 °, and the reverse Cerenkov radiation is realized when the frequency is 900THz-950 THz.
In the device of the embodiment of the invention, the adjustment of the frequency and the radiation direction of the surface electromagnetic wave is realized by adjusting at least one of the initial speed of the charged particles 3, the electromagnetic parameters of the dielectric layer 1 and the thickness of the dielectric layer 1, so that the reverse Cherenkov radiation is realized. The electromagnetic parameters of the dielectric layer 1 include the relative permittivity and the relative permeability of the dielectric layer 1. Therefore, the device is simple in structure, simple in control method and convenient for realizing reverse Cerenkov radiation.
Based on the above embodiment, another embodiment of the present invention further provides a method for generating reverse cerenkov radiation, which is implemented by using the above apparatus, and the method includes:
enabling charged particles to pass through the position above a medium layer arranged on the surface of the charged particles at a preset initial speed, enabling the charged particles to enter the surface of the medium layer in parallel, enabling the direction of the initial speed to be parallel to the surface of the medium layer, and enabling the charged particles and the surface of the medium layer to have a gap smaller than a preset height; the charged particles excite surface electromagnetic waves which are transmitted in parallel along the surface of the dielectric layer; and adjusting the initial speed, the thickness of the dielectric layer and the electromagnetic parameters of the dielectric layer to enable the surface electromagnetic waves to be reverse waves with the speed smaller than the initial speed and form reverse Cherenkov radiation.
The method of the embodiment of the invention adopts the device to realize reverse Cerenkov radiation, is simple to operate and convenient to realize, and does not need double negative medium materials.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The method disclosed by the embodiment corresponds to the device disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the device part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (9)

1. An apparatus for generating reverse cerenkov radiation, comprising:
a substrate;
the dielectric layer is positioned on the surface of the substrate, the relative dielectric constant of the dielectric layer is a negative number, and the relative magnetic permeability of the dielectric layer is a positive number;
a charged particle emitter for generating charged particles of a preset initial velocity;
when the device is used for generating reverse Cerenkov radiation, the charged particle emitter is used for enabling charged particles to be incident on the surface of the medium layer in parallel, enabling the direction of the initial velocity to be parallel to the surface of the medium layer, and enabling the charged particles to have a gap smaller than a preset height with the surface of the medium layer; the charged particles excite surface electromagnetic waves which are transmitted in parallel along the surface of the dielectric layer; and adjusting the initial speed, the thickness of the dielectric layer and the electromagnetic parameters of the dielectric layer to enable the surface electromagnetic waves to be reverse waves with the speed smaller than the initial speed and form reverse Cherenkov radiation.
2. The device of claim 1, wherein the gap has a height of less than 0.1 μm.
3. The device of claim 1, wherein the dielectric layer is an artificial metamaterial thin film, and the frequency of the surface electromagnetic wave comprises 0.1-10 THz, inclusive.
4. The apparatus of claim 3, wherein the dielectric layer has a thickness of 0.01mm to 0.1mm, inclusive.
5. The apparatus of claim 1, wherein the dielectric layer is a gold film or a silver film, and the frequency of the surface electromagnetic wave comprises a visible frequency.
6. The apparatus of claim 5, wherein the dielectric layer has a thickness of 10nm to 30nm, inclusive.
7. The apparatus of claim 1, wherein the substrate is an insulating material, and the substrate has a relative permittivity in a range of 2-5, inclusive.
8. The device of claim 7, wherein the substrate is a glass substrate or a ceramic substrate.
9. A method of generating reverse cerenkov radiation, comprising:
enabling charged particles to pass through the position above a medium layer arranged on the surface at a preset initial speed, enabling the charged particles to enter the surface of the medium layer in parallel, enabling the direction of the initial speed to be parallel to the surface of the medium layer, and enabling the charged particles and the surface of the medium layer to have a gap smaller than a preset height; the charged particles excite surface electromagnetic waves which are transmitted in parallel along the surface of the dielectric layer; adjusting the initial speed, the thickness of the dielectric layer and the electromagnetic parameters of the dielectric layer to enable the surface electromagnetic wave to be a reverse wave with the speed smaller than the initial speed and form reverse Cherenkov radiation;
the relative dielectric constant of the dielectric layer is a negative number, and the relative magnetic permeability is a positive number.
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