CN108565358B - Anode etching method and display screen - Google Patents

Anode etching method and display screen Download PDF

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CN108565358B
CN108565358B CN201810053802.7A CN201810053802A CN108565358B CN 108565358 B CN108565358 B CN 108565358B CN 201810053802 A CN201810053802 A CN 201810053802A CN 108565358 B CN108565358 B CN 108565358B
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anode
groove
planarization layer
etching
film
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CN108565358A (en
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金玉
邓世刚
鲍智利
陆蕴雷
陶肖朋
杨爽
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Kunshan Govisionox Optoelectronics Co Ltd
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    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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Abstract

The embodiment of the invention provides an anodic etching method and a display screen. The method comprises the following steps: forming a groove on the surface of the anode planarization layer; and forming an anode in the groove. Therefore, the problem that the requirement of the designed line width can not be met due to large transverse defect of the anode in wet etching is solved.

Description

Anode etching method and display screen
Technical Field
The invention relates to the technical field of thin film transistors, in particular to an anode etching method and a display screen.
Background
With the development of display technology, the requirement for electron mobility of a semiconductor layer in a TFT (Thin Film Transistor) is higher and higher, and Low Temperature Polysilicon (LTPS) technology is developed. After the semiconductor in the TFT adopts the LTPS semiconductor, the carrier mobility of the LTPS semiconductor material is very high, and the pixel signal writing speed is obviously improved, so that the area of the TFT can be set smaller, and structures such as routing lines in the array substrate can be set thinner, and a display panel with higher aperture ratio can be obtained.
The anode pattern of the LTPS-AMOLED (active matrix light emitting diode) is manufactured by adopting a wet etching technology, and the wet etching has obvious etching isotropy and serious transverse etching, so that the final anode pattern has obvious transverse loss. For a screen with high PPI (pixel per inch) resolution, the line width of an anode pattern is greatly reduced due to the design and layout requirements, and the wet etching cannot meet the requirements of the design line width due to large anode transverse defect.
Disclosure of Invention
In view of this, the embodiment of the invention provides an anode etching method and a display screen, which solve the technical problem that the design line width cannot be met due to the large anode lateral defect of wet etching.
An embodiment of the present invention provides an anodic etching method, including:
forming a groove on the surface of the anode planarization layer; and
an anode is formed in the groove.
The forming of the groove on the surface of the anode planarization layer comprises: and forming the groove by using an anode planarization layer to semi-expose the mask plate.
Forming an anode in the groove includes:
preparing an anode film on the surface of the anode planarization layer;
forming an etching pattern on the surface of the anode film; and
and carrying out wet etching on the anode film to eliminate the anode film outside the groove.
The anode is in close contact with the side wall of the groove.
Further comprising: the edges of the groove form a slope of a slope angle.
The anode planarization layer half-exposure mask further comprises: a full-transparent region, a semi-transparent region and an opaque region; and
the semi-permeable region includes a region of increased transmittance transition.
The groove is formed through a semi-transparent area of the anode planarization layer semi-exposure mask plate; and
the slope angle is formed by the transmittance transition increasing region.
Further comprising: the edge profile of the etched pattern is smaller than the edge profile of the groove.
The angle of the slope angle is 80-90 degrees.
According to the display screen provided by the embodiment of the invention, the display screen comprises the array substrate formed by the anodic etching method.
According to the anode etching method and the display screen provided by the embodiment of the invention, the groove is formed on the surface of the anode planarization layer, and then the anode is formed in the groove, so that the problem that the requirement of the designed line width cannot be met due to large transverse loss of the anode in wet etching is solved.
Drawings
Fig. 1 is a flowchart illustrating an anodic etching method according to an embodiment of the present invention.
Fig. 2 is a flowchart illustrating an anodic etching method according to an embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view illustrating exposure of an anode planarization layer according to an embodiment of the present invention.
Fig. 4 is a schematic diagram illustrating a planarized half-exposed mask blank according to an embodiment of the present invention.
Fig. 5 is a schematic cross-sectional view illustrating a groove of an anode planarization layer according to an embodiment of the present invention.
Fig. 6 is a schematic cross-sectional view illustrating an anode film according to an embodiment of the invention.
Fig. 7 is a schematic diagram illustrating a method for preparing a bevel angle according to an embodiment of the present invention.
Fig. 8 is a schematic cross-sectional view illustrating an anodic film wet etching according to an embodiment of the present invention.
Fig. 9 is a schematic cross-sectional view of an anode film after wet etching according to an embodiment of the invention.
Fig. 10 is a schematic diagram of a mask pattern of an anode film etching mask plate according to an embodiment of the present invention.
Fig. 11 is a schematic cross-sectional view of an LTPS-AMOLED array substrate according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a flowchart illustrating an anodic etching method according to an embodiment of the present invention. As shown in fig. 1, the method of anodic etching includes the following steps:
step 01: forming a groove on the surface of the anode planarization layer;
step 02: an anode is formed in the groove.
According to the anode etching method provided by the embodiment of the invention, the anode pattern is formed in the groove on the surface of the planarization layer, so that the edge of the anode pattern with the thickness characteristic is tightly combined with the side wall of the groove, and the transverse loss of the anode in the wet etching process is effectively avoided.
Fig. 2 is a flowchart illustrating an anodic etching method according to an embodiment of the present invention. As shown in fig. 2, the method of anodic etching for forming an anode in the groove includes the following steps:
step 03: preparing an anode film on the surface of the anode planarization layer;
step 04: forming an etching pattern on the surface of the anode film;
the forming of the etching pattern includes performing PR Coating (photoresist photosensitive material Coating) on the anode film layer, exposing the anode film layer with a mask of an exposure machine, and developing the photoresist to form an anode film etching mask including the etching pattern on the photoresist, and the processing procedures are not limited in this embodiment. The etched pattern matches the anode pattern in the groove where the anode is formed.
Step 05: and carrying out wet etching on the anode film by using the etching pattern to eliminate the anode film outside the groove.
The photoresist material forming the etch pattern is removed during subsequent processing.
With reference to fig. 1 and 2, after a groove is formed in a region of the surface of the anode planarization layer where an anode pattern needs to be formed, an anode film is prepared on the surface of the anode planarization layer, and because the edge of the groove of the planarization layer is approximately a right angle, the anode film layer is broken at the edge of the groove of the planarization layer, which is beneficial to peeling off the anode film outside the groove. And then after an etching pattern is formed on the surface of the anode film, carrying out wet etching on the anode film to eliminate the anode film outside the groove, wherein the edge of the anode in the groove of the planarization layer is tightly contacted with the edge of the groove of the planarization layer, so that the transverse etching of the etching liquid medicine on the anode in the groove of the planarization layer is prevented.
The anode etching method of the embodiment of the invention is beneficial to the formation of the anode pattern on the anode film and the stripping of the redundant anode film, and meanwhile, the anode pattern and the groove are matched to carry out wet etching, so that the transverse diffusion of the etching liquid medicine can be effectively solved, and the problem that the wet etching cannot meet the requirement of the designed line width due to larger transverse loss of the anode is solved.
Fig. 3 is a schematic cross-sectional view illustrating exposure of an anode planarization layer according to an embodiment of the present invention. As shown in fig. 3, an exposure machine is used to emit light, and the anode planarization layer 202 is exposed through the anode planarization layer half-exposure mask 201, so that grooves are formed in the masked region on the surface of the anode planarization layer 202. The pattern of the groove corresponds to the pattern of the semi-transparent area of the anode planarization layer semi-exposure mask plate.
The anode planarization layer 202 further includes a substrate, a capacitor top plate, a trace, a capacitor bottom plate, and the like.
It should be understood that the anode planarization layer 202 is exposed by the exposure machine irradiating light through the anode planarization layer half-exposure mask 201, but the present invention is not limited to a specific exposure apparatus.
Fig. 4 is a schematic diagram illustrating a planarized half-exposed mask blank according to an embodiment of the present invention. As shown in fig. 4, in an embodiment of the invention, the exposure apparatus exposes the anode planarization layer 202 through the anode planarization layer half-exposure mask 201, and a pattern of the exposed anode planarization layer 202 corresponds to a pattern of the anode planarization layer half-exposure mask 201. The anodic planarization layer half-exposure mask 201 includes: a transflective region 301, a semi-transmissive region 302, and an opaque region 303; the semi-transmissive region 302 includes an edge compensation region 3011. The anode planarization layer half-exposure mask 201 is fabricated on a silicon dioxide substrate, and the material of the full-transmission region 301 may be blank silicon dioxide (SiO)2) The opaque region 303 may be chrome (Cr), and the semi-transparent region 302 may be chrome oxide x (Cr)xOy) For example, chromium oxide (Cr)2O3) Chromium dioxide (CrO)2) And the like. However, the present invention is not limited to the specific type of the material of the anode planarization layer half-exposure mask 201.
The full-transparent region 301 can ensure that the anode planarization layer is completely exposed, the semi-transparent region 302 can form a groove in the anode planarization layer 202, and the opaque region 303 can ensure that the exposure is not affected by external light. The exposure forms a pattern of different depths in the anode planarization layer through the full-transmissive region 301, the semi-transmissive region 302, and the opaque region 303.
The semi-exposure mask 201 of the anode planarization layer meets the requirement that when the anode planarization layer 202 is exposed, a proper exposure amount is selected to ensure that the anode planarization layer 202 of the full-transparent region 301 is completely exposed, and the groove depth of the groove of the anode planarization layer corresponding to the semi-transparent region 302 is kept in the same order of magnitude as the thickness of the anode film layer to be formed subsequently.
The surface of the anode planarization layer corresponding to the semi-transparent region 302 may form a groove with a groove depth of 0.1 μm to 0.3 μm, and the formation of the groove with a groove depth of 0.12 μm is favorable for matching the formation of the anode film and the subsequent etching of the anode film.
Fig. 5 is a schematic cross-sectional view illustrating a groove of an anode planarization layer according to an embodiment of the present invention. As shown in fig. 4 and 5, after the exposure machine exposes the anode planarization layer 202 through the anode planarization layer half-exposure mask 201, the pattern of the grooves formed in the anode planarization layer 202 should completely correspond to the pattern of the anode planarization layer half-exposure mask 201. That is, the full-transparent region of the anode planarization layer half exposure mask 201 corresponds to the formation of the via hole in the anode planarization layer 202, the half-transparent region 302 of the anode planarization layer half exposure mask 201 corresponds to the formation of the groove in the anode planarization layer 202, and the opaque region of the anode planarization layer half exposure mask 201 corresponds to the portion of the anode planarization layer 202 that is not exposed. For example, as shown in fig. 4, the light from the exposure device forms a groove 401 of the anode planarization layer 202 after being exposed through the semi-transparent region 302 in the anode planarization layer semi-exposure mask 201, and the light from the exposure device forms a via 402 of the anode planarization layer 202 after being exposed through the fully transparent region 301 in the anode planarization layer semi-exposure mask 201.
Fig. 6 is a schematic cross-sectional view illustrating an anode film according to an embodiment of the invention. As shown in fig. 6, after forming the groove 401 on the surface of the anode planarization layer 202, an anode film 501 is further formed on the surface of the anode planarization layer 202 according to an embodiment of the present invention. An anodic film may be formed on the anode planarization layer 202 using a magnetron sputtering (Sputter) process, and cover the surface of the anode planarization layer 202, the groove 401, and the via hole 402. The anodic film should be electrically conductive. The anode film can be made of Indium Tin Oxide (ITO)/silver (Ag)/Indium Tin Oxide (ITO):
Figure GDA0002437308300000051
wherein, Ag can well reflect Light emitted by an Organic Light-emitting Diode (OLED), and ITO can well prevent Ag from being oxidized. However, the present invention is not limited to the specific structure and thickness of the anode film layer.
It should be understood that the anodic film may be formed on the anodic planarization layer 202 by using a magnetron sputtering (Sputter) process, but the present invention is not limited to a specific preparation method of the anodic film.
As shown in fig. 4, in an embodiment of the present invention, the edge compensation region 3011 of the semi-transmissive region in the half-exposure mask of the planarization layer can control the edge of the groove 401 of the anode planarization layer 202 to form a slope angle, the angle of the slope angle is in the range of 80-90 degrees, the anode is tightly combined with the sloped groove sidewall at the groove edge, and the top of the groove sidewall forms a relatively sharp edge relative to the outside of the groove due to the slope angle, so that the internal stress of the anode film at the position is drastically changed, which is beneficial to promoting the anode film to break at the position in the subsequent process, and is beneficial to the peeling of the anode pattern formed by the anode film and the groove.
Fig. 7 is a schematic diagram illustrating a method for preparing a bevel angle according to an embodiment of the present invention. As shown in fig. 7, in order to solve the problem that the slope angle of the edge of the groove of the planarization layer formed by exposing the normal half-exposure mask plate is too small, an edge compensation region 3011 is disposed on the anode planarization half-exposure mask plate 201, that is, the transmittance has a transition increasing region (i.e., the edge compensation region 3011) in the edge range of the semi-transmissive region 302 of the anode planarization half-exposure mask plate 201, and the transmittance gradually increases from the center of the groove to the edge direction in the transition increasing region to repair the problem that the slope angle of the edge of the groove 401 is too small, thereby ensuring that the angle of the edge slope is in the range of 80-90 degrees.
Controlling the angle of the slope angle of the edge of the groove 401 of the anode planarization layer 202 to be in the range of 80-90 degrees may promote the anode film on the surface of the anode planarization layer to be broken.
As shown in fig. 5 and 6, the edge of the anode film in the groove 401 is in close contact with the sidewall of the groove 401, and the anode film can be embedded in the groove 401 of the anode planarization layer 202 well. Because the edge of the anode film in the groove 401 is in close contact with the edge of the groove 401 of the anode planarization layer 202, the subsequent wet etching liquid medicine cannot diffuse to the edge of the anode for lateral etching. The problem of transverse defect and overlarge loss of the anode is fundamentally solved. Meanwhile, after the exposure machine exposes the full-transparent area of the half-exposure mask 201 of the anode planarization layer, the anode planarization layer 202 of the full-transparent area is completely exposed to form a through hole 402, and the anode film is connected with the drain electrode of the driving thin film field effect transistor through the through hole 402.
It is understood that the material of the anode planarization layer 202 can be a photosensitive organic glue or a positive photoresist, and the invention is not limited to the specific type of the material of the anode planarization layer 202.
It is also understood that the thickness of the anode planarization layer 202 may be 2.1 μm, but the invention is not limited to the specific thickness of the anode planarization layer 202.
Fig. 8 is a schematic cross-sectional view illustrating an anodic film wet etching according to an embodiment of the present invention. As shown in fig. 8, in an embodiment of the present invention, after an anode film is prepared on the surface of the anode planarization layer 202, an anode film etching mask 601 is further formed on the surface of the anode film by using a photoresist, the anode film etching mask 601 includes an etching pattern and a shielding pattern matched with the etching pattern, the shielding pattern of the anode film etching mask 601 completely covers the groove 401 corresponding to the pattern of the groove 401, and after the anode film etching mask 601 is prepared, the anode wet etching apparatus 602 releases wet etching chemical to chemically etch the anode film, thereby completing the wet etching process of the anode film.
As can be understood, because the anode film is a layer structure, the material and thickness of each layer can be ITO/Ag/ITO:
Figure GDA0002437308300000071
so the wet etching can use nitric acid (HNO)3) Phosphoric acid (H)3PO4) Acetic acid (CH)3COOH), etc., but the present invention is not limited to a specific wet etching chemical.
The anode film etching mask plate 601 completely covers the groove 401 through the shielding pattern, wet etching liquid medicine cannot be diffused to the edge of the anode in the groove 401 to conduct transverse etching, transverse loss of etching is reduced, and line width accuracy is improved.
In an embodiment of the invention, the outline of the shielding pattern is slightly larger than the outline of the groove 401, i.e. the outline of the corresponding etching pattern is slightly larger than the outline of the groove 401. The edge profile of the masking pattern on the anodic film etching mask plate 601 is slightly larger than the profile of the corresponding groove, i.e. compared to the anodic pattern in the groove, the edge profile of the masking pattern on the anodic film etching mask plate 601 is flared with respect to the edge profile of the anodic film in the groove, i.e. the edge profile of the etching pattern is reduced with respect to the edge profile of the anodic film in the groove. The edge profile flare of the shielding pattern is between 0.15 μm and 0.4 μm, and for anodic etching, the edge profile flare of the shielding pattern is preferably 0.2 μm in consideration of the possible groove depth.
Fig. 9 is a schematic cross-sectional view of an anode film after wet etching according to an embodiment of the invention. As shown in fig. 9, after the anode film etching is completed, an anode pattern is formed, and the anode pattern should correspond to the shielding pattern of the anode film etching mask 601. 701 is an anode film reserved after wet etching, the anode film and the anode planarization layer 202 are kept in the same level, the edges are tightly connected, transverse loss due to the transverse etching phenomenon of the wet etching does not occur, the line width precision is improved, and therefore the production requirement is met.
Fig. 10 is a schematic diagram of a mask pattern of an anode film etching mask plate according to an embodiment of the present invention. As shown in fig. 10, the anode pattern formed after wet etching the anode film should correspond to the shielding pattern of the anode film etching mask plate 601, that is, the anode film in the area on the anode film etching mask plate 601 where the wet etching chemical can flow in is etched to complete the wet etching, the anode film in the area 603 on the anode film etching mask plate 601 where the wet etching chemical cannot flow in is not etched, and the wet etching is not performed.
Fig. 11 is a schematic cross-sectional view of an LTPS-AMOLED array substrate according to an embodiment of the invention. As shown in fig. 11, after the wet etching is completed, a pixel defining layer 901 and a spacer layer 902 are further formed on the anode pattern in an embodiment of the invention, so as to form the low temperature polysilicon active matrix light emitting diode array substrate.
The display screen comprises the array substrate formed by the anode etching method. The array substrate comprises an anode planarization layer, wherein grooves and through holes are formed in the surface of the anode planarization layer, anode patterns are located in the grooves and/or the through holes, and the edges of the anode patterns are tightly combined with the edges of the grooves. The thickness of the anode pattern is such that the anode pattern is flush with the anode planarization layer surface.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and the like that are within the spirit and principle of the present invention are included in the present invention.

Claims (4)

1. A method of anodic etching, the method comprising:
forming grooves on the surface of an anode planarization layer, wherein the grooves are formed through an anode planarization layer semi-exposure mask plate, and the planarization layer semi-exposure mask plate comprises: the semi-transparent area comprises an edge compensation area, a transmittance transition increasing area is arranged in the edge range of the semi-transparent area of the anode planarization semi-exposure mask plate, the transmittance in the transmittance transition increasing area is gradually increased from the center of the groove to the edge direction, so that the groove edge of the anode planarization layer is controlled to form a slope angle, wherein the angle of the slope angle is 80-90 degrees; and
forming an anode in the groove, comprising:
preparing an anode film on the surface of the anode planarization layer, wherein the groove depth of the groove of the anode planarization layer corresponding to the semi-transparent region is kept in the same order of magnitude as the thickness of the anode film;
forming an anode film etching mask plate on the surface of the anode film, wherein the anode film etching mask plate comprises an etching pattern and a shielding pattern matched with the etching pattern, and the shielding pattern of the anode film etching mask plate corresponds to the pattern of the groove and completely covers the groove;
and carrying out wet etching on the anode film, and eliminating the anode film outside the groove, wherein the anode film and the anode planarization layer which are remained after the wet etching are kept consistent in level.
2. The method of anodic etching according to claim 1, wherein the anode is in close contact with a sidewall of the groove.
3. The anodic etching method according to claim 1, further comprising: the inner edge profile of the etched pattern is greater than the edge profile of the groove.
4. A display panel comprising an array substrate formed by the anodic etching method according to any one of claims 1 to 3.
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CN109801954B (en) 2019-02-26 2021-04-09 京东方科技集团股份有限公司 Array substrate, manufacturing method thereof, display panel and display device
CN110137385A (en) * 2019-04-09 2019-08-16 深圳市华星光电半导体显示技术有限公司 Organic LED display panel and its manufacturing method
CN110610975B (en) * 2019-09-23 2022-04-08 京东方科技集团股份有限公司 Display substrate, preparation method thereof and display device
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