CN110137385A - Organic LED display panel and its manufacturing method - Google Patents
Organic LED display panel and its manufacturing method Download PDFInfo
- Publication number
- CN110137385A CN110137385A CN201910279720.9A CN201910279720A CN110137385A CN 110137385 A CN110137385 A CN 110137385A CN 201910279720 A CN201910279720 A CN 201910279720A CN 110137385 A CN110137385 A CN 110137385A
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- Prior art keywords
- display panel
- led display
- organic led
- thin film
- film transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention proposes a kind of organic LED display panel and its manufacturing method.The described method includes: providing a substrate；Form a thin film transistor (TFT) array on the substrate, wherein thin film transistor (TFT) array institute position region be a thin film transistor (TFT) array region, around the thin film transistor (TFT) array region region be a peripheral region；A flatness layer is formed on the thin film transistor (TFT) array；The flatness layer is patterned, so that the patterned flatness layer has a step structure in the peripheral region.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of organic LED display panel and its manufacturer
Method.
Background technique
Organic Light Emitting Diode (organic light emitting diode, OLED) display device has frivolous, main
It is dynamic shine, fast response time, angle of visibility is big, colour gamut is wide, brightness is high and many merits such as low in energy consumption, therefore OLED display is close
It is concerned by people within several years.
Shown referring to FIG. 1, Fig. 1 is shown according to the process for the method that the prior art manufactures organic LED display panel
It is intended to.Firstly, providing a substrate 110 such as the step of Fig. 1 shown in (A), and a thin film transistor (TFT) array (not shown) is formed in institute
State on substrate 110, wherein thin film transistor (TFT) array institute position region be a thin film transistor (TFT) array region, around described
The region in thin film transistor (TFT) array region is a peripheral region.It is the film layer structure of peripheral region shown by Fig. 1.Secondly, shape
At a flatness layer 120 on the thin film transistor (TFT) array.
Then, such as the step of Fig. 1 shown in (B), an anode layer 130 is formed on the flatness layer 120.
Then, the anode layer 130 is patterned, so that the anode layer 130 after being patterned is in film crystal
There is a predetermined pattern, using the anode as OLED device in pipe array region.Exist for example, a photoresist layer 140 can be initially formed
On the anode layer 130, such as the step of Fig. 1 shown in (C)；And the photoresist layer 140 is given into exposure and imaging, such as the step of Fig. 1
Suddenly shown in (D).Finally, etch process is executed again, such as the step of Fig. 1 shown in (E), to remove the anode layer in peripheral region
130。
However, especially the thickness of flatness layer 120 is being greater than since segment difference of the flatness layer 120 in peripheral region is very big
Having steeper tilt angle (taper angle) at 1.5 microns, (for example, such as the step of Fig. 1 shown in (A), inclination angle alpha is big
In 70 °) so that the photoresist layer 140 being subsequently formed flows to lower from eminence readily along segment difference, i.e. the bottom of flatness layer 120
The thickness of photoresist layer 140 is larger, such as the step of Fig. 1 shown in (C).Therefore, such as the step of Fig. 1 shown in (D), position is in flatness layer 120
The photoresist layer 140 of bottom can not be completely removed after exposure and imaging processing procedure.This after etch process further such that cause
Anode layer 130 can remain, and the region X marked in (E), leads to the short circuit of product such as the step of Fig. 1.
Therefore, it is necessary to a kind of organic LED display panel and its manufacturing method be provided, to solve the prior art
The problems of.
Summary of the invention
The purpose of the present invention is to provide a kind of organic LED display panel and its manufacturing methods, existing to solve
The technical problem that technology Anodic layer remains in peripheral region and product yield is low.
In order to solve the above technical problems, the present invention provides a kind of method for manufacturing organic LED display panel,
It is characterized in that, which comprises
One substrate is provided；
Form a thin film transistor (TFT) array on the substrate, wherein thin film transistor (TFT) array institute position region be
One thin film transistor (TFT) array region, the region around the thin film transistor (TFT) array region are a peripheral region；
A flatness layer is formed on the thin film transistor (TFT) array；
The flatness layer is patterned, so that the patterned flatness layer has a ladder-like knot in the peripheral region
Structure.
In the method for manufacture organic LED display panel of the invention, the material of the flatness layer be positivity or
The organic photoresist of negativity.
In the method for manufacture organic LED display panel of the invention, the step structure is to pass through photoetching
What technique was formed using a half-tone mask.
In the method for manufacture organic LED display panel of the invention, the step structure has multiple
Rank.
In the method for manufacture organic LED display panel of the invention, there are three platforms for the step structure tool
Rank.
In the method for manufacture organic LED display panel of the invention, each step of the step structure
Thickness be less than or equal to 1.5 microns.
The present invention also provides a kind of organic LED display panel, the organic LED display panel has
One thin film transistor (TFT) array region and the peripheral region for surrounding the thin film transistor (TFT) array region, which is characterized in that described
Organic LED display panel includes:
One substrate；And
One patterned flatness layer, setting is on the substrate；
Wherein the patterned flatness layer has a step structure in the peripheral region.
In organic LED display panel of the invention, the step structure has multiple steps.
In organic LED display panel of the invention, there are three steps for the step structure tool.
In organic LED display panel of the invention, the thickness of each step of the step structure is less than
Or it is equal to 1.5 microns.
Compared to the prior art, the present invention proposes a kind of organic LED display panel and its manufacturing method.Pass through
Flatness layer is formed to have to the step structure of multiple steps in peripheral region, and the thickness of each step is less than 1.5
Micron, therefore, flatness layer have lesser tilt angle in peripheral region.The present invention can be to avoid anode layer in peripheral region
Middle residual solves the low technical problem of product yield.
Detailed description of the invention
Fig. 1 shows the flow diagram that the method for organic LED display panel is manufactured according to the prior art.
Fig. 2 shows the flow diagram of the method for organic LED display panel constructed in accordance.
Specific embodiment
The explanation of following embodiment is to can be used to the particular implementation of implementation to illustrate the present invention with reference to additional schema
Example.The direction term that the present invention is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "inner", "outside", " side "
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is to be given the same reference numerals in the figure.
Referring to figure 2..Fig. 2 shows the process signal of the method for organic LED display panel constructed in accordance
Figure.The present invention proposes a kind of manufacture Organic Light Emitting Diode (organic light emitting diode, OLED) display surface
The method of plate.It the described method comprises the following steps.
Firstly, providing a substrate 210, and form a thin film transistor (TFT) array (not shown) such as the step of Fig. 2 shown in (A)
On the substrate 210, wherein thin film transistor (TFT) array institute position region be a thin film transistor (TFT) array region, surround
The region in the thin film transistor (TFT) array region is a peripheral region.It is the film layer structure of peripheral region shown by Fig. 2.Its
It is secondary, a flatness layer 220 is formed on the thin film transistor (TFT) array.
Then, such as the step of Fig. 2 shown in (B), the flatness layer 220 is patterned, so that the patterned flatness layer 220
There is a step structure in the peripheral region.
Come again, such as the step of Fig. 2 shown in (C), forms an anode layer 230 on the patterned flatness layer 220, and
A photoresist layer 240 is formed on the anode layer 230.
Then, such as the step of Fig. 2 shown in (D), the photoresist layer 240 is given into exposure and imaging.
Finally, such as the step of Fig. 2 shown in (E), then etch process is executed, to remove the anode layer in the peripheral region
230。
So far, the manufacture of organic LED display panel is completed.
According to the present invention, the material of the flatness layer 220 is positivity or the organic photoresist of negativity.The step structure
It can be formed by photoetching process using a half-tone mask (halftone mask) 300, such as the step of Fig. 2 (A) and (B)
It is shown.
For example, there are four region A, B, C, D for the tool of half-tone mask 300.Described four regions A, B, C, D are respectively provided with
Light rate a%, b%, c%, d%, wherein d% > c% > b% > a%.In addition, the material of the flatness layer 220 is the organic light of positivity
Hinder material.Therefore, after use half-tone mask 300 is to 220 exposure and imaging of flatness layer, the flatness layer 220 is able to
It is patterned and is formed the step structure of the step there are three tools shown in (B) such as the step of Fig. 2.
In another example there are four region A, B, C, D for the tool of half-tone mask 300.Described four regions A, B, C, D are respectively provided with
Light transmittance a%, b%, c%, d%, wherein a% > b% > c% > d%.In addition, the material of the flatness layer 220 is that negativity is organic
Photoresist.Therefore, after use half-tone mask 300 is to 220 exposure and imaging of flatness layer, the flatness layer 220
The tool shown in (B) such as the step of Fig. 2 is formed to be patterned, and there are three the step structures of step.
Since the thickness of flatness layer 220 can cause anode layer 230 to remain when being greater than 1.5 microns after etch process, because
As long as the thickness of this each step for being formed by step structure is less than or equal to 1.5 microns, it is avoided that anode layer 230 exists
It can be remained after being etched.
In one embodiment of this invention, half with multiple and different light transmittance regions can be used according to product needs
Tone mask 300, to form the step structure with multiple steps.The present invention will have how many number to half-tone mask 300
The different light transmittance regions of amount are not especially limited.
For example, if flatness layer 220 with a thickness of 2 microns, should be formed tool there are two step step structure,
The thickness of each step can be made less than 1.5 microns；According to this, tool can be used, and there are two the halftonings in different light transmittance regions
There are two the step structures of step to form tool for mask 300.If flatness layer 220 with a thickness of 5 microns, should be formed has
The step structure of four steps could make the thickness of each step less than 1.5 microns；According to this, it can be used with four
There are four the step structures of step to form tool for the half-tone mask 300 in a difference light transmittance region.
According to the present invention, there is in peripheral region the step structure of multiple steps, and each due to flatness layer
The thickness of rank is less than 1.5 microns, therefore flatness layer has lesser tilt angle (taper angle) in peripheral region.This
Invention can remain after being etched to avoid the anode layer in peripheral region.
The present invention also provides a kind of organic LED display panel, the organic LED display panel has
One thin film transistor (TFT) array region and the peripheral region for surrounding the thin film transistor (TFT) array region.The organic light-emitting diodes
Pipe display panel includes:
One substrate 210；And
One patterned flatness layer 220 is arranged on the substrate 210；
Wherein the patterned flatness layer 220 has a step structure in the peripheral region.
In one embodiment of this invention, the step structure has multiple steps.For example, the step structure tool
There are three steps.
In one embodiment of this invention, it is micro- to be less than or equal to 1.5 for the thickness of each step of the step structure
Rice.
Compared to the prior art, the present invention proposes a kind of organic LED display panel and its manufacturing method.Pass through
Flatness layer is formed to have to the step structure of multiple steps in peripheral region, and the thickness of each step is less than 1.5
Micron, therefore, flatness layer have lesser tilt angle in peripheral region.The present invention can be to avoid anode layer in peripheral region
Middle residual solves the low technical problem of product yield.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of method for manufacturing organic LED display panel, which is characterized in that the described method includes:
One substrate is provided；
Form a thin film transistor (TFT) array on the substrate, wherein thin film transistor (TFT) array institute position region be one thin
Film transistor array region, the region around the thin film transistor (TFT) array region are a peripheral region；
A flatness layer is formed on the thin film transistor (TFT) array；
The flatness layer is patterned, so that the patterned flatness layer has a step structure in the peripheral region.
2. the method for manufacture organic LED display panel according to claim 1, which is characterized in that described flat
The material of layer is positivity or the organic photoresist of negativity.
3. the method for manufacture organic LED display panel according to claim 2, which is characterized in that the ladder
Shape structure is to be formed by photoetching process using a half-tone mask.
4. the method for manufacture organic LED display panel according to claim 1, which is characterized in that the ladder
Shape structure has multiple steps.
5. the method for manufacture organic LED display panel according to claim 4, which is characterized in that the ladder
There are three steps for shape structure tool.
6. the method for manufacture organic LED display panel according to claim 4, which is characterized in that the ladder
The thickness of each step of shape structure is less than or equal to 1.5 microns.
7. a kind of organic LED display panel, the organic LED display panel has a thin film transistor (TFT) battle array
Column region and the peripheral region for surrounding the thin film transistor (TFT) array region, which is characterized in that the Organic Light Emitting Diode
Display panel includes:
One substrate；And
One patterned flatness layer, setting is on the substrate；
Wherein the patterned flatness layer has a step structure in the peripheral region.
8. organic LED display panel according to claim 7, which is characterized in that the step structure has
Multiple steps.
9. organic LED display panel according to claim 8, which is characterized in that the step structure has
Three steps.
10. organic LED display panel according to claim 8, which is characterized in that the step structure
The thickness of each step is less than or equal to 1.5 microns.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910279720.9A CN110137385A (en) | 2019-04-09 | 2019-04-09 | Organic LED display panel and its manufacturing method |
| PCT/CN2019/083699 WO2020206726A1 (en) | 2019-04-09 | 2019-04-22 | Organic light-emitting diode display panel and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910279720.9A CN110137385A (en) | 2019-04-09 | 2019-04-09 | Organic LED display panel and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110137385A true CN110137385A (en) | 2019-08-16 |
Family
ID=67569336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910279720.9A Pending CN110137385A (en) | 2019-04-09 | 2019-04-09 | Organic LED display panel and its manufacturing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110137385A (en) |
| WO (1) | WO2020206726A1 (en) |
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|---|---|
| WO2020206726A1 (en) | 2020-10-15 |
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