CN108564983A - A kind of LDPC test platforms for NAND FLASH - Google Patents
A kind of LDPC test platforms for NAND FLASH Download PDFInfo
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- CN108564983A CN108564983A CN201810315076.1A CN201810315076A CN108564983A CN 108564983 A CN108564983 A CN 108564983A CN 201810315076 A CN201810315076 A CN 201810315076A CN 108564983 A CN108564983 A CN 108564983A
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- 238000012360 testing method Methods 0.000 title claims abstract description 17
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- 238000001514 detection method Methods 0.000 claims description 5
- 238000009825 accumulation Methods 0.000 claims description 3
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/20—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits using counters or linear-feedback shift registers [LFSR]
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
- G11C29/56008—Error analysis, representation of errors
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Abstract
本发明公开了一种用于NAND FLASH的LDPC测试平台,该测试平台先产生一定长度的随机数,把随机数和校验信息写入FLASH,再读取FLASH送入译码器译码,最后统计错误信息。
The invention discloses an LDPC test platform for NAND FLASH. The test platform first generates a random number of a certain length, writes the random number and verification information into the FLASH, reads the FLASH and sends it to a decoder for decoding, and finally Statistics error message.
Description
技术领域technical field
本发明属于集成电路设计领域,具体说是一种用于NAND FLASH的LDPC的测试平台。The invention belongs to the field of integrated circuit design, in particular to an LDPC test platform for NAND FLASH.
背景技术Background technique
随着NAND FLASH工艺的进步,越来越多的NAND FLASH需要LDPC来进行纠错。然而用于NAND FLASH的LDPC没有标准的校验矩阵和其相对应的生成矩阵,而且校验矩阵的的构造方法有很多种,如何验证出每种矩阵的性能,就需要一个测试平台。With the advancement of NAND FLASH technology, more and more NAND FLASH needs LDPC for error correction. However, LDPC for NAND FLASH does not have a standard check matrix and its corresponding generation matrix, and there are many methods for constructing the check matrix. How to verify the performance of each matrix requires a test platform.
发明内容Contents of the invention
本发明的目的是解决用于NAND FLASH的LDPC的测试问题,提供一种用于NANDFLASH的LDPC的测试平台。The purpose of the invention is to solve the test problem of LDPC used for NAND FLASH, and provide a kind of test platform for LDPC used for NAND FLASH.
为解决上述技术问题,本发明提供了一种用于NAND FLASH的LDPC的测试平台,包括In order to solve the problems of the technologies described above, the invention provides a test platform for LDPC of NAND FLASH, including
随机数产生模块,根据需要的信息长度产生随机数、The random number generation module generates random numbers according to the required information length,
编码模块,根据输入的信息长度和矩阵产生校验信息、The encoding module generates verification information according to the input information length and matrix,
NAND FLASH控制模块,用于和NAND FLASH进行数据交换,NAND FLASH控制器把信息位和校验位写入FLASH、NAND FLASH control module, used for data exchange with NAND FLASH, NAND FLASH controller writes information bits and check bits into FLASH,
译码模块,把从FLASH读出的hard information和soft information数据送入译码器进行译码,输入的是hard information和soft information,输出的结果是hardinformation、和The decoding module sends the hard information and soft information data read from the FLASH into the decoder for decoding. The input is hard information and soft information, and the output results are hard information, and
误码检测模块,用于统计错误信息,比较译码后的数据和随机发生器的数据,统计误码率。The bit error detection module is used for counting error information, comparing the decoded data with the data of the random generator, and counting the bit error rate.
所述随机数产生模块采用LFSR结构,包括若干寄存器,所述寄存器的初始值为0或1。The random number generation module adopts LFSR structure and includes several registers, and the initial value of the registers is 0 or 1.
所述随机数产生模块得到周期为128的随机数。The random number generating module obtains a random number with a period of 128.
所述编码模块采用SARR结构包括位移寄存器和累加电路。The encoding module adopts a SARR structure and includes a shift register and an accumulation circuit.
所述NAND FLASH控制模块包括把FLASH的hard information和soft information读出来送入译码模块进行译码的读控制部分、把编码模块送入的信息位和校验位写入NAND FLASH的写控制部分和实现对NAND FLASH的块擦除的擦除控制部分。The NAND FLASH control module includes the read control part that reads the hard information and soft information of the FLASH and sends them to the decoding module for decoding, and writes the information bits and check digits sent by the coding module into the NAND FLASH write control part And realize the erase control part of block erase to NAND FLASH.
所述译码模块采用NMS解码包括输入模块、输出模块、存储单元、变量节点计算单元和校验节点计算单元,变量节点计算单元负责变量节点的更新,校验节点计算单元负责校验节点的更新,每次迭代的中间结果保存在存贮单元中。The decoding module adopts NMS decoding and includes an input module, an output module, a storage unit, a variable node calculation unit and a check node calculation unit, the variable node calculation unit is responsible for the update of the variable node, and the check node calculation unit is responsible for the update of the check node , the intermediate results of each iteration are stored in the storage unit.
误码检测模块包括比较器和UART模块,该比较器负责比较随机数发生器的数据和解码后的数据,并统计出错误个数,UART负责把错误个数的信息发送到PC端。The error detection module includes a comparator and a UART module. The comparator is responsible for comparing the data of the random number generator and the decoded data, and counts the number of errors. The UART is responsible for sending the information of the number of errors to the PC.
附图说明Description of drawings
图1为本发明的模块图;Fig. 1 is a block diagram of the present invention;
图2为LFSR结构图;Figure 2 is a structural diagram of the LFSR;
图3为SARR结构图;Figure 3 is a SARR structure diagram;
图4为NAND FLASH控制器示意图;Fig. 4 is a schematic diagram of a NAND FLASH controller;
图5为译码器结构图;Fig. 5 is a structural diagram of a decoder;
图6为误码检测结构示意图。Fig. 6 is a schematic diagram of the structure of bit error detection.
具体实施方式Detailed ways
下面结合附图对本发明作更进一步的说明。The present invention will be further described below in conjunction with the accompanying drawings.
本发明提供了一种用于NAND FLASH的LDPC测试平台,该测试平台先产生一定长度的随机数,把随机数和校验信息写入FLASH,再读取FLASH送入译码器译码,最后统计错误信息。The invention provides an LDPC test platform for NAND FLASH. The test platform first generates a random number of a certain length, writes the random number and verification information into the FLASH, reads the FLASH and sends it to a decoder for decoding, and finally Statistics error message.
该发明的实施具体包括以下步骤:The implementation of this invention specifically comprises the following steps:
步骤1,随机数的产生。随机数产生采用图2所示的LFSR结构,根据需要的信息长度产生随机数,每个寄存器的初始值可以是0或者1,得到周期为128的随机数。Step 1, random number generation. Random number generation adopts the LFSR structure shown in Figure 2, and generates random numbers according to the required information length. The initial value of each register can be 0 or 1, and a random number with a period of 128 is obtained.
步骤2,编码。编码器采用图3所示的SARR(shift-register-adder-accumulator)结构,SARR电路利用移位寄存器和累加电路为核心实现向量与矩阵的乘法,极大地减少了运算量和资源消耗,有利于编码器的硬件实现。根据输入的信息长度和矩阵产生校验信息。Step 2, encoding. The encoder adopts the SARR (shift-register-adder-accumulator) structure shown in Figure 3. The SARR circuit uses the shift register and the accumulation circuit as the core to realize the multiplication of vectors and matrices, which greatly reduces the amount of calculation and resource consumption, which is beneficial to The hardware implementation of the encoder. Generate verification information according to the input information length and matrix.
步骤3,和NAND FLASH的数据交换。NAND FLASH控制器把信息位和校验位写入FLASH,NAND FLASH的控制器如图4所示,分为读控制部分、写控制部分和擦除控制部分。NAND FLASH的特性决定了在写之前必须进行擦除操作。读控制部分就是把FLASH 的hardinformation和soft information读出来送入译码器进行译码。擦除控制部分实现对NANDFLASH的块擦除。写控制部分就是把编码器送入的信息位和校验位写入NAND FLASH。Step 3, data exchange with NAND FLASH. The NAND FLASH controller writes information bits and parity bits into the FLASH, and the NAND FLASH controller is shown in Figure 4, which is divided into a read control part, a write control part and an erase control part. The characteristics of NAND FLASH determine that an erase operation must be performed before writing. The read control part is to read out the hard information and soft information of FLASH and send them to the decoder for decoding. The erasure control part realizes the block erasure of NANDFLASH. The write control part is to write the information bit and check bit sent by the encoder into NAND FLASH.
步骤4,译码。把从FLASH读出的hard information和soft information数据送入译码器进行译码。译码器采用NMS的解码方法。译码的结构图如图5所示,包括输入模块,输出模块,存储单元,变量节点计算单元和校验节点计算单元。变量节点计算单元负责变量节点的更新,校验节点计算单元负责校验节点的更新。每次迭代的中间结果保存在存贮单元中。输入的是hard information和soft information,输出的结果是 hard information。Step 4, decoding. Send the hard information and soft information data read from FLASH to the decoder for decoding. The decoder adopts the decoding method of NMS. The decoding structure diagram is shown in Figure 5, including an input module, an output module, a storage unit, a variable node calculation unit and a check node calculation unit. The variable node calculation unit is responsible for updating the variable nodes, and the check node calculation unit is responsible for updating the check nodes. The intermediate results of each iteration are stored in the storage unit. The input is hard information and soft information, and the output result is hard information.
步骤5,统计错误。比较译码后的数据和随机发生器的数据,统计误码率,可以通过UART把数据送到PC端。结构图如图6所示,包括一个比较器和一个UART模块。比较器负责比较随机数发生器的数据和解码后的数据,并且统计出错误个数。UART负责把错误个数的信息发送到PC端。Step 5, statistics errors. Compare the decoded data with the data of the random generator, count the bit error rate, and send the data to the PC through UART. The block diagram is shown in Figure 6, including a comparator and a UART module. The comparator is responsible for comparing the data of the random number generator and the decoded data, and counting the number of errors. UART is responsible for sending the wrong number of information to the PC.
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| CN201810315076.1A CN108564983A (en) | 2018-04-10 | 2018-04-10 | A kind of LDPC test platforms for NAND FLASH |
| PCT/CN2018/103043 WO2019196316A1 (en) | 2018-04-10 | 2018-08-29 | Ldpc testing platform for nand flash |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111192624A (en) * | 2019-12-30 | 2020-05-22 | 深圳市芯天下技术有限公司 | System and method for testing performance of BCH (broadcast channel) error correcting code |
| CN112382335A (en) * | 2020-11-16 | 2021-02-19 | 武汉新芯集成电路制造有限公司 | Memory test system and method |
| CN118868967A (en) * | 2024-07-01 | 2024-10-29 | 浙江天泓波控电子科技有限公司 | A coding software system for FPGA |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101131710A (en) * | 2007-09-13 | 2008-02-27 | 南京大学 | Low Density Parity Check Codec Hardware Simulation System Based on Programmable Gate Array |
| CN101789794A (en) * | 2009-01-23 | 2010-07-28 | 雷凌科技股份有限公司 | Decoding method and circuit of low density parity check code |
| CN105185413A (en) * | 2015-09-24 | 2015-12-23 | 中国航天科技集团公司第九研究院第七七一研究所 | Automatic verification platform and method for on-chip memory management unit fault-tolerant structure |
| KR20160140514A (en) * | 2015-05-29 | 2016-12-07 | 주식회사 쏠리드 | Device for decoding low density parity check code |
| CN208298556U (en) * | 2018-04-10 | 2018-12-28 | 南京扬贺扬微电子科技有限公司 | A kind of LDPC test platform for NAND FLASH |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011522301A (en) * | 2008-03-11 | 2011-07-28 | アギア システムズ インコーポレーテッド | Method and apparatus for storing data in a multi-level cell flash memory device using cross-page sector, multi-page encoding and per-page encoding |
| KR20130044694A (en) * | 2011-10-24 | 2013-05-03 | 삼성전자주식회사 | Memory system and method for recording/reproducing data thereof |
| US8640002B1 (en) * | 2012-07-10 | 2014-01-28 | Micron Technology, Inc. | Resolving trapping sets |
-
2018
- 2018-04-10 CN CN201810315076.1A patent/CN108564983A/en active Pending
- 2018-08-29 WO PCT/CN2018/103043 patent/WO2019196316A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101131710A (en) * | 2007-09-13 | 2008-02-27 | 南京大学 | Low Density Parity Check Codec Hardware Simulation System Based on Programmable Gate Array |
| CN101789794A (en) * | 2009-01-23 | 2010-07-28 | 雷凌科技股份有限公司 | Decoding method and circuit of low density parity check code |
| KR20160140514A (en) * | 2015-05-29 | 2016-12-07 | 주식회사 쏠리드 | Device for decoding low density parity check code |
| CN105185413A (en) * | 2015-09-24 | 2015-12-23 | 中国航天科技集团公司第九研究院第七七一研究所 | Automatic verification platform and method for on-chip memory management unit fault-tolerant structure |
| CN208298556U (en) * | 2018-04-10 | 2018-12-28 | 南京扬贺扬微电子科技有限公司 | A kind of LDPC test platform for NAND FLASH |
Non-Patent Citations (1)
| Title |
|---|
| 陈广 等: ""一种多码率LDPC码编码器的设计与实现"", 《中国科技论文在线》, 30 December 2009 (2009-12-30), pages 1 - 5 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111192624A (en) * | 2019-12-30 | 2020-05-22 | 深圳市芯天下技术有限公司 | System and method for testing performance of BCH (broadcast channel) error correcting code |
| CN112382335A (en) * | 2020-11-16 | 2021-02-19 | 武汉新芯集成电路制造有限公司 | Memory test system and method |
| CN112382335B (en) * | 2020-11-16 | 2022-06-21 | 武汉新芯集成电路制造有限公司 | Memory test system and method |
| CN118868967A (en) * | 2024-07-01 | 2024-10-29 | 浙江天泓波控电子科技有限公司 | A coding software system for FPGA |
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