CN108550634A - Using the cadmium-zinc-teiluride radiation detector and preparation method thereof of zinc oxide conductive electrode - Google Patents
Using the cadmium-zinc-teiluride radiation detector and preparation method thereof of zinc oxide conductive electrode Download PDFInfo
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- CN108550634A CN108550634A CN201810212660.4A CN201810212660A CN108550634A CN 108550634 A CN108550634 A CN 108550634A CN 201810212660 A CN201810212660 A CN 201810212660A CN 108550634 A CN108550634 A CN 108550634A
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- zinc
- zinc oxide
- cadmium
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- teiluride
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 230000005855 radiation Effects 0.000 title claims abstract description 76
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 118
- 239000011701 zinc Substances 0.000 claims abstract description 118
- 239000000463 material Substances 0.000 claims description 50
- 239000002178 crystalline material Substances 0.000 claims description 24
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- 239000012528 membrane Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 17
- 229910052793 cadmium Inorganic materials 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000000205 computational method Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 6
- 238000010348 incorporation Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 5
- 235000019441 ethanol Nutrition 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 claims 3
- 229910052714 tellurium Inorganic materials 0.000 claims 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 abstract description 28
- 239000002184 metal Substances 0.000 abstract description 28
- 239000000853 adhesive Substances 0.000 abstract description 10
- 230000001070 adhesive effect Effects 0.000 abstract description 10
- 238000012544 monitoring process Methods 0.000 abstract description 6
- 238000009206 nuclear medicine Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000011160 research Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 description 61
- 229960001296 zinc oxide Drugs 0.000 description 38
- 239000010408 film Substances 0.000 description 29
- 238000012360 testing method Methods 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
Abstract
The invention discloses a kind of cadmium-zinc-teiluride radiation detectors and preparation method thereof using zinc oxide conductive electrode, the radiation detector uses electrode-semiconductor electrode sandwich device architecture, i.e., successively by the structure of Zinc oxide-base conductive oxide film electrode, cadmium-zinc-teiluride and Zinc oxide-base conductive oxide film electrode three parts stacking assembling.The present invention replaces traditional metal electrode using Zinc oxide-base conductive oxide film electrode.Compared with traditional cadmium-zinc-teiluride radiation detector, Zinc oxide-base conductive oxide film electrode electric conductivity is good, and the adhesive force on cadmium-zinc-teiluride surface is far above metal, and contact resistance is lower, reliability higher, substantially increases the stability and service life of detector.This detector can be widely applied to nuclear medicine, numerous Radiation monitoring fields such as aerospace and security protection.It is of great significance in terms of for the fields such as public safety, military affairs, nuclear industry, nuclear medicine, scientific research and aerospace radiation monitoring, security protection.
Description
Technical field
The present invention relates to a kind of Cdl-x_Znx_Te device and preparation method thereof, especially a kind of cadmium-zinc-teiluride radiation detector and
Preparation method is applied to inorganic semiconductor radiation detector technical field.
Background technology
Cadmium-zinc-teiluride, CdZnTe, abbreviation CZT are a kind of important compound semiconductor materials, can be used for detecting high energy gamma
Ray and X-ray.Compared with the conventional semiconductors such as silicon (Si), germanium (Ge), CZT have higher average atomic number, density with
And larger energy gap, it is the good material for preparing room temperature compound semiconductor radiation detector.These features make CZT detect
Utensil has that small, detection efficient is high, the lower advantage of dark current at room temperature.Radiation detector based on CZT has extensive
Application field, provided in fields such as basic science, safety detection, space research, medical diagnosis and industrial flaw detections new
Detection Techniques approach.
The performance of CZT radiation detectors is also contacted with the electrode of CZT devices other than the crystal quality depending on CZT
It is related.CZT radiation detectors generally use metal electrode, such as gold, gold/titanium combination electrode at present.But due to the height electricity of CZT
Resistance and high work function, it is difficult to form good Ohmic contact with metal electrode.On the other hand, common metal electrode is in CZT tables
The poor adhesive force in face, the metals such as gold, titanium differ larger with the coefficient of thermal expansion of CZT, these problems cause device to use for a long time
When electrode be easy to fall off, device lifetime is affected.
Invention content
In order to solve prior art problem, it is an object of the present invention to overcome the deficiencies of the prior art, and to provide one kind
Using the cadmium-zinc-teiluride radiation detector and preparation method thereof of zinc oxide conductive electrode, magnetic control is used in tellurium-zincium-cadmium crystal material surface
Sputtering method prepares the doping zinc-oxide membrane electrode of high conductivity, to be based on Zinc oxide-base conductive film electrode for realization is a kind of
The preparations of high stability CZT radiation detectors provide effective ways.Radiation detector prepared by the present invention is for public peace
Entirely, have in terms of the fields such as military affairs, nuclear industry, nuclear medicine, scientific research and aerospace radiation monitoring, security protection important
Meaning and application prospect.
In order to achieve the above objectives, the present invention adopts the following technical scheme that：
A kind of cadmium-zinc-teiluride radiation detector using zinc oxide conductive electrode, the cadmium-zinc-teiluride radiation detector structure use
The combining form of the sandwich device architecture of electrode-semiconductor-electrode, successively by Zinc oxide-base conductive oxide film electrode,
Cadmium-zinc-teiluride and Zinc oxide-base conductive oxide film electrode three parts carry out the device architecture that stacking is assembled.
It is preferred that the thickness of the Zinc oxide-base conductive oxide film electrode of above-mentioned cadmium-zinc-teiluride radiation detector be 10~
5000nm.The thickness of the Zinc oxide-base conductive oxide film electrode of further preferred above-mentioned cadmium-zinc-teiluride radiation detector is 200
~300nm.
As currently preferred technical solution, the Zinc oxide-base conductive oxide film of above-mentioned cadmium-zinc-teiluride radiation detector
The dopant material of any one element or arbitrary several complex elements in electrode material in incorporation such as aluminium, gallium, boron and indium, according to
The quality of doping element material relative to Zinc oxide-base conductive oxide film gross mass mass percent as element doping
Computational methods are measured, element doping amount is 1~30wt.%.Further preferred element doping amount is 3~10wt.%.
It is preferred that above-mentioned Cdl-x_Znx_Te surface uses flat smooth surface, as cadmium-zinc-teiluride and Zinc oxide-base conductive oxide
The interface that membrane electrode combines.
As currently preferred technical solution, the Zinc oxide-base conductive oxide film of the side of tellurium-zincium-cadmium crystal material
Electrode has patterned form, and the shape of patterned Zinc oxide-base conductive oxide film electrode is rectangular or round, or
The plane distribution form of person's Zinc oxide-base conductive oxide film electrode uses square array or circular array form.
A kind of preparation method of the cadmium-zinc-teiluride radiation detector of the invention using zinc oxide conductive electrode, including walk as follows
Suddenly：
(1) choose tellurium-zincium-cadmium crystal material, using not higher than 0.03 μm of granularity aluminum oxide polishing powder to cadmium-zinc-teiluride
Two surfaces up and down of crystalline material are mechanically polished respectively, until surface is substantially flat, mirror effect is presented, and then will be thrown
After tellurium-zincium-cadmium crystal material after light is cleaned by ultrasonic at least 15 minutes respectively in acetone, ethyl alcohol and deionized water, High Purity Nitrogen is used
Air-blowing is dry, obtains the tellurium-zincium-cadmium crystal material of clean dried, spare；
(2) magnetically controlled sputter method is used, in the step (1) under the tellurium-zincium-cadmium crystal material of the clean dried of gained
Growth thickness is the Zinc oxide-base conductive oxide film electrode of 10~5000nm on surface；Target used be incorporation as aluminium, gallium,
The zinc oxide target of any one element or arbitrary several complex elements in boron and indium, the quality according to doping element material are opposite
In prepared Zinc oxide-base conductive oxide film electrode gross mass mass percent as element doping amount computational methods,
Element doping amount is 1~30wt.%；
(3) magnetically controlled sputter method is used, the unilateral Zinc oxide-base conductive oxide film electricity of gained in the step (2)
The Zinc oxide-base conductive oxide that patterned thickness is 10~5000nm is grown on the upper surface of the tellurium-zincium-cadmium crystal material of pole
Membrane electrode, target used are the oxidation of any one element or arbitrary several complex elements in incorporation such as aluminium, gallium, boron and indium
Zinc target, the matter according to the quality of doping element material relative to prepared Zinc oxide-base conductive oxide film electrode gross mass
Percentage is measured as element doping amount computational methods, element doping amount is 1~30wt.%；As currently preferred technical side
Case combines the shape of the patterned Zinc oxide-base conductive oxide film electrode of assembling on the upper surface of tellurium-zincium-cadmium crystal material
Square array or circle are used for rectangular either round or Zinc oxide-base conductive oxide film electrode plane distribution form
Shape array format；
(4) by the step (3), finally obtain successively by Zinc oxide-base conductive oxide film electrode, cadmium-zinc-teiluride and
Zinc oxide-base conductive oxide film electrode three parts carry out the device architecture that stacking is assembled, to form cadmium-zinc-teiluride radiation
Detector device architecture.
The present invention compared with prior art, has following obvious prominent substantive distinguishing features and remarkable advantage：
1. tradition CZT radiation detectors generally use metal electrode, such as gold, gold/titanium combination electrode, and the present invention uses
Zinc oxide-base TCO thin film electrode replaces traditional metal electrode, and compared with traditional cadmium-zinc-teiluride radiation detector, the present invention uses oxygen
Change zinc-base TCO thin film electrodes conduct performance is good, and the adhesive force on the surfaces CZT is far above metal, and contact resistance is lower, reliability
Higher substantially increases the stability and service life of detector；
2. the present invention prepares Zinc oxide-base TCO thin film electrode using magnetically controlled sputter method, crystalline quality is good, adhesive force
By force, conductivity is high, and magnetically controlled sputter method batch growth cost is low, and speed is fast, and stable quality is highly suitable for conductive film electrode
Preparation.
Description of the drawings
Fig. 1 is structural principle signal of the embodiment of the present invention one using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode
Figure.
Fig. 2 is being existed using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode for the preparation of the embodiment of the present invention one
60KeV241The lower pulse height spectrogram tested of the sources Am γ irradiation.
Specific implementation mode
Said program is described further below in conjunction with specific examples of the implementation, the preferred embodiment of the present invention is described in detail such as
Under：
Embodiment one：
In the present embodiment, referring to Fig. 1, a kind of cadmium-zinc-teiluride radiation detector using zinc oxide conductive electrode, the tellurium
Zinc cadmium radiation detector structure uses the combining form of the sandwich device architecture of electrode-semiconductor-electrode, successively by zinc oxide
Base TCO thin film electrode, CZT and Zinc oxide-base TCO thin film electrode three parts carry out the device architecture that stacking is assembled.Cadmium-zinc-teiluride
The thickness of the Zinc oxide-base TCO thin film electrode of radiation detector is respectively 300nm.The Zinc oxide-base of cadmium-zinc-teiluride radiation detector
Aluminium element material is mixed in TCO thin film electrode material, according to the quality of doping element material relative to Zinc oxide-base electric conductive oxidation
For the mass percent of object total film mass as element doping amount computational methods, aluminium element doping is 10wt.%.Cadmium-zinc-teiluride material
Expect that surface uses flat smooth surface, the interface combined as CZT and Zinc oxide-base TCO thin film electrode.The one of CZT crystalline materials
The Zinc oxide-base TCO thin film electrode of side has patterned form, the plane distribution shape of patterned Zinc oxide-base TCO thin film electrode
It is the square electrode of 2mm × 2mm that formula, which uses 2 × 2 square arrays, the size of every piece of Zinc oxide-base TCO thin film electrode block,.
A kind of the present embodiment including is walked as follows using the preparation method of the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode
Suddenly：
(1) CZT crystalline materials are chosen, using the aluminum oxide polishing powder of 0.03 μm of granularity to the upper and lower of CZT crystalline materials
Two surfaces carry out mechanical polishing 1h respectively, until surface is substantially flat, mirror effect is presented, then that the CZT after polishing is brilliant
It after body material is cleaned by ultrasonic 15 minutes respectively in acetone, ethyl alcohol and deionized water, is dried up with high pure nitrogen, obtains clean dried
CZT crystalline materials, it is spare；
(2) magnetically controlled sputter method is used, the following table of the CZT crystalline materials of the clean dried of gained in the step (1)
Developing zinc oxide base TCO thin film electrode on face；Target used is the zinc oxide target (AZO) for mixing aluminium doping, according to doping element material
The quality of material is calculated relative to the mass percent of prepared Zinc oxide-base TCO thin film electrode gross mass as element doping amount
The doping of method, aluminium (Al) is 10wt.%, and the thickness of the Zinc oxide-base TCO thin film electrode of growth is the Integral electric of 300nm
Pole；Control sputtering atmosphere is argon gas, and sputtering power 150W, sputter temperature is room temperature；
(3) magnetically controlled sputter method is used, the CZT of the unilateral Zinc oxide-base TCO thin film electrode of gained in the step (2)
Patterned Zinc oxide-base TCO thin film electrode is grown on the upper surface of crystalline material, specific used target and sputtering parameter with
Identical when preparation lower surface Zinc oxide-base TCO thin film electrode in the step (2), this step is preparing patterned Zinc oxide-base
When TCO thin film electrode, using mask plate, 4 thickness that 2 × 2 square array forms are sputtered in the upper surface of CZT crystalline materials are
The size of 300nm is the electrode of 2mm × 2mm squares, is distributed electrode array；
(4) it by the step (3), finally obtains successively by Zinc oxide-base TCO thin film electrode, CZT and Zinc oxide-base TCO
Membrane electrode three parts carry out the device architecture that stacking is assembled, to form cadmium-zinc-teiluride radiation detector device structure.
Experimental test and analysis：
It is tested manufactured in the present embodiment as sample using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode
Test, uses 60KeV's241The sources Am γ, the zinc oxide conductive thin adulterated based on Al that the present embodiment is prepared at room temperature
The CZT radiation detectors of membrane electrode are irradiated, bias 600V, and the peak value of test gained pulse-height spectrum can have with noise
Separation well.Test result shows that this detector has high counting efficiency and high signal-to-noise ratio, and energy resolution is
25.3%, as shown in Figure 2.Fig. 2 is the pulse-height spectrum of the present embodiment test gained.
The present embodiment uses Zinc oxide-base conductive oxide (TCO) membrane electrode of Al doping to replace traditional metal
Electrode can be obtained with metal good electric conductivity about the same.In addition, compared to metal electrode, aoxidized in CZT detector
Zinc-base TCO thin film electrode also has several advantages, and if zinc oxide matches very much with the coefficient of thermal expansion of CZT, zinc oxide is on the surfaces CZT
Adhesive force be much higher than metal etc., this allows Zinc oxide-base electrode and CZT to form better contact, has and lower connects
It gets an electric shock and hinders, better reliability substantially increases stability and the service life of device.The present embodiment is in the surfaces CZT developing zinc oxide
Before base TCO thin film electrode, the CZT materials are mechanically polished, make to combine Zinc oxide-base conductive oxide (TCO) thin
The CZT material surfaces of membrane electrode are more smooth, realize better interface ohmic contact.The present embodiment uses zinc oxide conductive electrode
Cadmium-zinc-teiluride radiation detector, the radiation detector use electrode-semiconductor-electrode sandwich device architecture, using doping gold
The Zinc oxide-base conductive oxide film electrode for belonging to material replaces traditional metal electrode, with traditional cadmium-zinc-teiluride radiation detector phase
Than Zinc oxide-base conductive oxide film electrode electric conductivity is good, and the adhesive force on cadmium-zinc-teiluride surface is far above metal, contact
Resistance is lower, reliability higher, substantially increases the stability and service life of detector.This implementation detector can extensive use
In nuclear medicine, numerous Radiation monitoring fields such as aerospace and security protection.
Embodiment two：
The present embodiment and embodiment one are essentially identical, are particular in that：
In the present embodiment, a kind of cadmium-zinc-teiluride radiation detector using zinc oxide conductive electrode, the cadmium-zinc-teiluride radiation
Panel detector structure uses the combining form of the sandwich device architecture of electrode-semiconductor-electrode, thin by Zinc oxide-base TCO successively
Membrane electrode, CZT and Zinc oxide-base TCO thin film electrode three parts carry out the device architecture that stacking is assembled.Cadmium-zinc-teiluride radiation is visited
The thickness for the upper layer and lower layer Zinc oxide-base TCO thin film electrode for surveying the both sides CZT of device is respectively 200nm and 300nm.Cadmium-zinc-teiluride radiates
In the Zinc oxide-base TCO thin film electrode material of detector mix gallium element material, according to doping element material quality relative to
The mass percent of Zinc oxide-base conductive oxide film gross mass is as element doping amount computational methods, gallium element doping
5wt.%.Cdl-x_Znx_Te surface uses flat smooth surface, the interface combined as CZT and Zinc oxide-base TCO thin film electrode.
The thickness of the Zinc oxide-base TCO thin film electrode of the side of CZT crystalline materials is 200nm, is the Zinc oxide-base TCO thin film of monoblock type
Electrode；The Zinc oxide-base TCO thin film electrode of the other side of CZT crystalline materials has patterned form, patterned Zinc oxide-base
The plane distribution form of TCO thin film electrode uses 2 × 2 square arrays, and the size of every piece of Zinc oxide-base TCO thin film electrode block is
The thickness of the square electrode of 2mm × 2mm, each Zinc oxide-base TCO thin film electrode block is all 300nm.
A kind of the present embodiment including is walked as follows using the preparation method of the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode
Suddenly：
(1) CZT crystalline materials are chosen, using the aluminum oxide polishing powder of 0.03 μm of granularity to the upper and lower of CZT crystalline materials
Two surfaces carry out mechanical polishing 1h respectively, until surface is substantially flat, mirror effect is presented, then that the CZT after polishing is brilliant
It after body material is cleaned by ultrasonic 15 minutes respectively in acetone, ethyl alcohol and deionized water, is dried up with high pure nitrogen, obtains clean dried
CZT crystalline materials, it is spare；
(2) magnetically controlled sputter method is used, the following table of the CZT crystalline materials of the clean dried of gained in the step (1)
Developing zinc oxide base TCO thin film electrode on face；Target used is the zinc oxide target (GZO) of gallium doping, according to doping element material
Quality relative to prepared Zinc oxide-base TCO thin film electrode gross mass mass percent as element doping amount calculating side
The doping of method, gallium (Ga) is 5wt.%, and the thickness of the Zinc oxide-base TCO thin film electrode of growth is the integral electrodes of 200nm；
Control sputtering atmosphere is argon gas, and sputtering power 150W, sputter temperature is room temperature；
(3) magnetically controlled sputter method is used, the CZT of the unilateral Zinc oxide-base TCO thin film electrode of gained in the step (2)
Patterned Zinc oxide-base TCO thin film electrode is grown on the upper surface of crystalline material, specific used target and sputtering parameter with
Identical when preparation lower surface Zinc oxide-base TCO thin film electrode in the step (2), this step is preparing patterned Zinc oxide-base
When TCO thin film electrode, using mask plate, 4 thickness that 2 × 2 square array forms are sputtered in the upper surface of CZT crystalline materials are
The size of 300nm is the electrode of 2mm × 2mm squares, is distributed electrode array；
(4) it by the step (3), finally obtains successively by Zinc oxide-base TCO thin film electrode, CZT and Zinc oxide-base TCO
Membrane electrode three parts carry out the device architecture that stacking is assembled, to form cadmium-zinc-teiluride radiation detector device structure.
Experimental test and analysis：
It is tested manufactured in the present embodiment as sample using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode
Test, uses 60KeV's241The sources Am γ, the zinc oxide conductive thin adulterated based on Ga that the present embodiment is prepared at room temperature
The CZT radiation detectors of membrane electrode are irradiated, bias 600V, and the peak value of test gained pulse-height spectrum can have with noise
Separation well.Test result shows that this detector has high counting efficiency and high signal-to-noise ratio, and energy resolution is
25.7%.
The present embodiment uses Zinc oxide-base conductive oxide (TCO) membrane electrode of Ga doping to replace traditional metal
Electrode can be obtained with metal good electric conductivity about the same.In addition, compared to metal electrode, aoxidized in CZT detector
Zinc-base TCO thin film electrode also has several advantages, and if zinc oxide matches very much with the coefficient of thermal expansion of CZT, zinc oxide is on the surfaces CZT
Adhesive force be much higher than metal etc., this allows Zinc oxide-base electrode and CZT to form better contact, has and lower connects
It gets an electric shock and hinders, better reliability substantially increases stability and the service life of device.The present embodiment is in the surfaces CZT developing zinc oxide
Before base TCO thin film electrode, the CZT materials are mechanically polished, make to combine Zinc oxide-base conductive oxide (TCO) thin
The CZT material surfaces of membrane electrode are more smooth, realize better interface ohmic contact.The present embodiment uses zinc oxide conductive electrode
Cadmium-zinc-teiluride radiation detector, the radiation detector use electrode-semiconductor-electrode sandwich device architecture, using doping gold
The Zinc oxide-base conductive oxide film electrode for belonging to material replaces traditional metal electrode, with traditional cadmium-zinc-teiluride radiation detector phase
Than Zinc oxide-base conductive oxide film electrode electric conductivity is good, and the adhesive force on cadmium-zinc-teiluride surface is far above metal, contact
Resistance is lower, reliability higher, substantially increases the stability and service life of detector.This implementation detector can extensive use
In nuclear medicine, numerous Radiation monitoring fields such as aerospace and security protection.
Embodiment three：
The present embodiment is substantially the same as in the previous example, and is particular in that：
In the present embodiment, a kind of cadmium-zinc-teiluride radiation detector using zinc oxide conductive electrode, the cadmium-zinc-teiluride radiation
Panel detector structure uses the combining form of the sandwich device architecture of electrode-semiconductor-electrode, thin by Zinc oxide-base TCO successively
Membrane electrode, CZT and Zinc oxide-base TCO thin film electrode three parts carry out the device architecture that stacking is assembled.Cadmium-zinc-teiluride radiation is visited
The thickness for the upper layer and lower layer Zinc oxide-base TCO thin film electrode for surveying the both sides CZT of device is respectively 200nm and 300nm.Cadmium-zinc-teiluride radiates
Boron two kinds of element materials of gallium are mixed in the Zinc oxide-base TCO thin film electrode material of detector, according to the quality of doping element material
Mass percent relative to Zinc oxide-base conductive oxide film gross mass is as element doping amount computational methods, boron and gallium co-doped
Miscellaneous element doping amount is 3wt.%, and wherein the doping of boron (B) is 1wt.%, and the doping of gallium (Ga) is 2wt.%.Cadmium-zinc-teiluride
Material surface uses flat smooth surface, the interface combined as CZT and Zinc oxide-base TCO thin film electrode.CZT crystalline materials
The thickness of the Zinc oxide-base TCO thin film electrode of side is 200nm, is the Zinc oxide-base TCO thin film electrode of monoblock type；CZT crystal
The Zinc oxide-base TCO thin film electrode of the other side of material has patterned form, patterned Zinc oxide-base TCO thin film electrode
It is the pros of 2mm × 2mm that plane distribution form, which uses 2 × 2 square arrays, the size of every piece of Zinc oxide-base TCO thin film electrode block,
The thickness of shape electrode, each Zinc oxide-base TCO thin film electrode block is all 300nm.
A kind of the present embodiment including is walked as follows using the preparation method of the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode
Suddenly：
(1) CZT crystalline materials are chosen, using the aluminum oxide polishing powder of 0.03 μm of granularity to the upper and lower of CZT crystalline materials
Two surfaces carry out mechanical polishing 1h respectively, until surface is substantially flat, mirror effect is presented, then that the CZT after polishing is brilliant
It after body material is cleaned by ultrasonic 15 minutes respectively in acetone, ethyl alcohol and deionized water, is dried up with high pure nitrogen, obtains clean dried
CZT crystalline materials, it is spare；
(2) magnetically controlled sputter method is used, the following table of the CZT crystalline materials of the clean dried of gained in the step (1)
Developing zinc oxide base TCO thin film electrode on face；Target used is the miscellaneous zinc oxide target (BGZO) of boron and gallium co-doped, according to doping element
The quality of material relative to prepared Zinc oxide-base TCO thin film electrode gross mass mass percent as element doping gauge
Calculation method, the miscellaneous doping of boron and gallium co-doped are 3wt.%, and the wherein doping of boron (B) is 1wt.%, and the doping of gallium (Ga) is
2wt.%, the thickness of the Zinc oxide-base TCO thin film electrode of growth are the integral electrodes of 200nm；Control sputtering atmosphere is argon gas,
Sputtering power is 150W, and sputter temperature is room temperature；
(3) magnetically controlled sputter method is used, the CZT of the unilateral Zinc oxide-base TCO thin film electrode of gained in the step (2)
Patterned Zinc oxide-base TCO thin film electrode is grown on the upper surface of crystalline material, specific used target and sputtering parameter with
Identical when preparation lower surface Zinc oxide-base TCO thin film electrode in the step (2), this step is preparing patterned Zinc oxide-base
When TCO thin film electrode, using mask plate, 4 thickness that 2 × 2 square array forms are sputtered in the upper surface of CZT crystalline materials are
The size of 300nm is the electrode of 2mm × 2mm squares, is distributed electrode array；
(4) it by the step (3), finally obtains successively by Zinc oxide-base TCO thin film electrode, CZT and Zinc oxide-base TCO
Membrane electrode three parts carry out the device architecture that stacking is assembled, to form cadmium-zinc-teiluride radiation detector device structure.
Experimental test and analysis：
It is tested manufactured in the present embodiment as sample using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode
Test, uses 60KeV's241The zinc oxide miscellaneous based on boron and gallium co-doped that the present embodiment prepares at room temperature is led in the sources Am γ
The CZT radiation detectors of conductive film electrode are irradiated, bias 600V, test gained pulse-height spectrum peak value can with make an uproar
Sound has good separation.Test result shows that this detector has high counting efficiency and high signal-to-noise ratio, and energy resolution is
25.1%.
The present embodiment uses miscellaneous Zinc oxide-base conductive oxide (TCO) membrane electrode of boron and gallium co-doped to replace tradition
Metal electrode, can obtain with metal good electric conductivity about the same.In addition, compared to metal electrode, in CZT detector
Middle Zinc oxide-base TCO thin film electrode also has several advantages, and if zinc oxide matches very much with the coefficient of thermal expansion of CZT, zinc oxide exists
The adhesive force on the surfaces CZT is much higher than metal etc., this allows Zinc oxide-base electrode and CZT to form better contact, has
Lower contact resistance, better reliability substantially increase stability and the service life of device.The present embodiment is given birth on the surfaces CZT
Before long Zinc oxide-base TCO thin film electrode, the CZT materials are mechanically polished, make to combine Zinc oxide-base electric conductive oxidation
The CZT material surfaces of object (TCO) membrane electrode are more smooth, realize better interface ohmic contact.The present embodiment is using oxidation
The cadmium-zinc-teiluride radiation detector of zinc conductive electrode, the radiation detector use electrode-semiconductor-electrode sandwich device architecture,
Traditional metal electrode is replaced using the Zinc oxide-base conductive oxide film electrode of doping metals material, with traditional cadmium-zinc-teiluride spoke
It penetrates detector to compare, Zinc oxide-base conductive oxide film electrode electric conductivity is good, and the adhesive force on cadmium-zinc-teiluride surface is far high
In metal, contact resistance is lower, reliability higher, substantially increases the stability and service life of detector.This implementation detects
Device can be widely applied to nuclear medicine, numerous Radiation monitoring fields such as aerospace and security protection.
The embodiment of the present invention is illustrated above in conjunction with attached drawing, but the present invention is not limited to the above embodiments, it can be with
The purpose of innovation and creation according to the present invention makes a variety of variations, under the Spirit Essence and principle of all technical solutions according to the present invention
Change, modification, replacement, combination or the simplification made, should be equivalent substitute mode, as long as meeting the goal of the invention of the present invention,
Without departing from the present invention using the technical principle of cadmium-zinc-teiluride radiation detector and preparation method thereof of zinc oxide conductive electrode and
Inventive concept belongs to protection scope of the present invention.
Claims (9)
1. a kind of cadmium-zinc-teiluride radiation detector using zinc oxide conductive electrode, it is characterised in that：The cadmium-zinc-teiluride radiation detection
Device structure uses the combining form of the sandwich device architecture of electrode-semiconductor-electrode, successively by Zinc oxide-base conductive oxide
Membrane electrode, cadmium-zinc-teiluride and Zinc oxide-base conductive oxide film electrode three parts carry out the device architecture that stacking is assembled.
2. using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode according to claim 1, it is characterised in that：The tellurium
The thickness of the Zinc oxide-base conductive oxide film electrode of zinc cadmium radiation detector is 10~5000nm.
3. using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode according to claim 2, it is characterised in that：The tellurium
The thickness of the Zinc oxide-base conductive oxide film electrode of zinc cadmium radiation detector is 200~300nm.
4. using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode according to claim 1, it is characterised in that：The tellurium
It is any one in incorporation such as aluminium, gallium, boron and indium in the Zinc oxide-base conductive oxide film electrode material of zinc cadmium radiation detector
The dopant material of kind element or arbitrary several complex elements, according to the quality of doping element material relative to Zinc oxide-base conduction oxygen
For the mass percent of compound total film mass as element doping amount computational methods, element doping amount is 1~30wt.%.
5. using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode according to claim 2, it is characterised in that：Element is mixed
Miscellaneous amount is 3~10wt.%.
6. using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode according to claim 1, it is characterised in that：Described
Cdl-x_Znx_Te surface uses flat smooth surface, the boundary combined as cadmium-zinc-teiluride and Zinc oxide-base conductive oxide film electrode
Face.
7. using the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode according to claim 1, it is characterised in that：Cadmium-zinc-teiluride
The Zinc oxide-base conductive oxide film electrode of the side of crystalline material has patterned form, patterned Zinc oxide-base conductive
The shape of oxide film electrode is rectangular either round or Zinc oxide-base conductive oxide film electrode plane distribution shape
Formula uses square array or circular array form.
8. using the preparation method of the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode, feature described in a kind of claim 1
It is, includes the following steps：
(1) choose tellurium-zincium-cadmium crystal material, using not higher than 0.03 μm of granularity aluminum oxide polishing powder to tellurium-zincium-cadmium crystal
Two surfaces up and down of material are mechanically polished respectively, until surface is substantially flat, mirror effect is presented, after then polishing
Tellurium-zincium-cadmium crystal material be cleaned by ultrasonic at least 15 minutes respectively in acetone, ethyl alcohol and deionized water after, with High Purity Nitrogen air-blowing
It is dry, the tellurium-zincium-cadmium crystal material of clean dried is obtained, it is spare；
(2) magnetically controlled sputter method is used, the lower surface of the tellurium-zincium-cadmium crystal material of the clean dried of gained in the step (1)
Upper growth thickness is the Zinc oxide-base conductive oxide film electrode of 10~5000nm；Target used be incorporation as aluminium, gallium, boron and
The zinc oxide target of any one element or arbitrary several complex elements in indium, according to the quality of doping element material relative to institute
The mass percent of the Zinc oxide-base conductive oxide film electrode gross mass of preparation is as element doping amount computational methods, element
Doping is 1~30wt.%；
(3) magnetically controlled sputter method is used, the unilateral Zinc oxide-base conductive oxide film electrode of gained in the step (2)
The Zinc oxide-base conductive oxide film that patterned thickness is 10~5000nm is grown on the upper surface of tellurium-zincium-cadmium crystal material
Electrode, target used are the zinc oxide of any one element or arbitrary several complex elements in incorporation such as aluminium, gallium, boron and indium
Target, the quality according to the quality of doping element material relative to prepared Zinc oxide-base conductive oxide film electrode gross mass
For percentage as element doping amount computational methods, element doping amount is 1~30wt.%；
(4) it by the step (3), finally obtains successively by Zinc oxide-base conductive oxide film electrode, cadmium-zinc-teiluride and oxidation
Zinc-base conductive oxide film electrode three parts carry out the device architecture that stacking is assembled, to form cadmium-zinc-teiluride radiation detection
Device device architecture.
9. using the preparation method of the cadmium-zinc-teiluride radiation detector of zinc oxide conductive electrode, feature according to claim 8
It is：In the step (3), the patterned Zinc oxide-base conduction oxygen of assembling is combined on the upper surface of tellurium-zincium-cadmium crystal material
The shape of compound membrane electrode is rectangular either round or Zinc oxide-base conductive oxide film electrode plane distribution form
Using square array or circular array form.
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