CN108538842B - 具有旋转检测的圆形打印存储器装置 - Google Patents

具有旋转检测的圆形打印存储器装置 Download PDF

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Publication number
CN108538842B
CN108538842B CN201810136821.6A CN201810136821A CN108538842B CN 108538842 B CN108538842 B CN 108538842B CN 201810136821 A CN201810136821 A CN 201810136821A CN 108538842 B CN108538842 B CN 108538842B
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circular
memory device
print memory
ferroelectric layer
bottom electrodes
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Chinese (zh)
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CN108538842A (zh
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C·D·布莱尔
M·R·西尔韦斯特里
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Xerox Corp
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Xerox Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1418—Disposition or mounting of heads or record carriers
    • G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
    • G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
    • G11B9/1454—Positioning the head or record carrier into or out of operative position or across information tracks; Alignment of the head relative to the surface of the record carrier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C2029/0403—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals during or with feedback to manufacture

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
CN201810136821.6A 2017-03-06 2018-02-09 具有旋转检测的圆形打印存储器装置 Active CN108538842B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/450,856 US10396085B2 (en) 2017-03-06 2017-03-06 Circular printed memory device with rotational detection
US15/450856 2017-03-06

Publications (2)

Publication Number Publication Date
CN108538842A CN108538842A (zh) 2018-09-14
CN108538842B true CN108538842B (zh) 2021-01-15

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US (2) US10396085B2 (enExample)
EP (1) EP3373207B1 (enExample)
JP (1) JP6896660B2 (enExample)
CN (1) CN108538842B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10396085B2 (en) * 2017-03-06 2019-08-27 Xerox Corporation Circular printed memory device with rotational detection
US10796212B2 (en) 2018-10-02 2020-10-06 Xerox Corporation Orientation-agnostic method to interface to printed memory label

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1860609A (zh) * 2004-07-22 2006-11-08 日本电信电话株式会社 双稳态电阻值获得器件、其制造方法、金属氧化物薄膜及其制造方法
CN101199021A (zh) * 2005-06-14 2008-06-11 薄膜电子有限公司 制作铁电存储器件的方法
CN104409632A (zh) * 2014-05-31 2015-03-11 福州大学 一种多层结构有机阻变存储器的3d打印制备方法
CN104425488A (zh) * 2013-08-29 2015-03-18 富士通半导体股份有限公司 半导体器件及制造半导体器件的方法
US9460770B1 (en) * 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2925748B1 (fr) 2007-12-21 2010-01-29 Commissariat Energie Atomique Support de stockage de donnees et procede associe
US9385306B2 (en) * 2014-03-14 2016-07-05 The United States Of America As Represented By The Secretary Of The Army Ferroelectric mechanical memory and method
DE102015015854B4 (de) * 2015-12-03 2021-01-28 Namlab Ggmbh Integrierte Schaltung mit einer ferroelektrischen Speicherzelle und Verwendung der integrierten Schaltung
US10396085B2 (en) * 2017-03-06 2019-08-27 Xerox Corporation Circular printed memory device with rotational detection

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1860609A (zh) * 2004-07-22 2006-11-08 日本电信电话株式会社 双稳态电阻值获得器件、其制造方法、金属氧化物薄膜及其制造方法
CN101199021A (zh) * 2005-06-14 2008-06-11 薄膜电子有限公司 制作铁电存储器件的方法
CN104425488A (zh) * 2013-08-29 2015-03-18 富士通半导体股份有限公司 半导体器件及制造半导体器件的方法
CN104409632A (zh) * 2014-05-31 2015-03-11 福州大学 一种多层结构有机阻变存储器的3d打印制备方法
US9460770B1 (en) * 2015-09-01 2016-10-04 Micron Technology, Inc. Methods of operating ferroelectric memory cells, and related ferroelectric memory cells

Also Published As

Publication number Publication date
US20190378847A1 (en) 2019-12-12
EP3373207A1 (en) 2018-09-12
JP2018148204A (ja) 2018-09-20
CN108538842A (zh) 2018-09-14
JP6896660B2 (ja) 2021-06-30
US11075210B2 (en) 2021-07-27
US10396085B2 (en) 2019-08-27
EP3373207B1 (en) 2020-10-14
US20180254280A1 (en) 2018-09-06

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