JP2018148204A - 回転検出を備えた円形印刷メモリ装置 - Google Patents
回転検出を備えた円形印刷メモリ装置 Download PDFInfo
- Publication number
- JP2018148204A JP2018148204A JP2018022374A JP2018022374A JP2018148204A JP 2018148204 A JP2018148204 A JP 2018148204A JP 2018022374 A JP2018022374 A JP 2018022374A JP 2018022374 A JP2018022374 A JP 2018022374A JP 2018148204 A JP2018148204 A JP 2018148204A
- Authority
- JP
- Japan
- Prior art keywords
- circular
- lower electrodes
- memory device
- ferroelectric layer
- base substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 230000002093 peripheral effect Effects 0.000 claims description 28
- 239000010410 layer Substances 0.000 description 33
- 230000006870 function Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 229920001774 Perfluoroether Polymers 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
- G11B9/1418—Disposition or mounting of heads or record carriers
- G11B9/1427—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement
- G11B9/1436—Disposition or mounting of heads or record carriers with provision for moving the heads or record carriers relatively to each other or for access to indexed parts without effectively imparting a relative movement with provision for moving the heads or record carriers relatively to each other
- G11B9/1454—Positioning the head or record carrier into or out of operative position or across information tracks; Alignment of the head relative to the surface of the record carrier
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0403—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals during or with feedback to manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
- ベース基板と、
前記ベース基板上に円形パターンで配置された複数の下部電極と、
前記複数の下部電極の上の強誘電体層と、
前記強誘電体層を介して前記複数の下部電極のそれぞれと接触する前記強誘電体層上の単一の上部電極と
を含む円形印刷メモリ装置。 - 前記円形パターンは、前記複数の下部電極のうちの2つの下部電極の間の単一の開放位置と、前記円形パターンの中心における中央開放位置とを含む、請求項1に記載の円形印刷メモリ装置。
- 前記単一の上部電極は、中央部材と周囲部材とを含むリングを含む、請求項2に記載の円形印刷メモリ装置。
- 前記周囲部材は、前記単一の開放位置において前記強誘電体層の上に配置される、請求項3に記載の円形印刷メモリ装置。
- 前記周囲部材および前記複数の下部電極のそれぞれは、ほぼ円形のコンタクトパッドを含む、請求項3に記載の円形印刷メモリ装置。
- 円形印刷メモリ装置を製造する方法であって、
ベース基板を提供し、
前記ベース基板上に円形パターンで複数の下部電極を適用し、
前記複数の下部電極の上に円形強誘電体層を適用し、
前記強誘電体層の上に単一の上部電極を適用し、前記単一の上部電極は前記強誘電体層を介して前記複数の下部電極のそれぞれと接触する
ことを含む、方法。 - 前記複数の下部電極のそれぞれのコンタクト領域上に追加の導電性コンタクト層を適用すること
をさらに含む、請求項6に記載の方法。 - 前記単一の上部電極および前記強誘電体層と交差する前記複数の下部電極のそれぞれによってメモリセルが形成される、請求項7に記載の方法。
- 可撓性ベース基板と、
前記可撓性ベース基板上に円形パターンで配置された複数の下部電極であって、前記円形パターンが前記複数の下部電極のうちの2つの下部電極の間の単一の開口部と前記円形パターンの中心の中央開口部とを含み、前記単一の開口部は、前記複数の下部電極の1つのサイズとほぼ同等のサイズを有し、前記複数の下部電極のそれぞれは、円形コンタクトと延長部材とを含む、複数の下部電極と、
前記複数の下部電極の上に位置する強誘電体層と、
前記強誘電体層上の単一の上部電極であって、前記上部電極は、リングと、中央部材と、周囲部材とを備え、前記リング、前記中央部材および前記周囲部材は、単一の連続片であり、前記周囲部材は、前記複数の下部電極のそれぞれとほぼ同様の形状を有し、前記リングは前記強誘電体層を介して前記複数の下部電極の前記それぞれの延長部材と接触し、前記中央部材は前記中央開口部に位置し、前記周囲部材は前記単一の開口部の上に位置する、単一の上部電極と
を含む円形印刷メモリ装置。 - 前記周囲部材は、読み取り装置へのピン0として前記単一上部電極の周囲部材を識別するほぼゼロの抵抗を有する、請求項9に記載の円形印刷メモリ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/450,856 US10396085B2 (en) | 2017-03-06 | 2017-03-06 | Circular printed memory device with rotational detection |
US15/450,856 | 2017-03-06 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018148204A true JP2018148204A (ja) | 2018-09-20 |
JP2018148204A5 JP2018148204A5 (ja) | 2021-03-25 |
JP6896660B2 JP6896660B2 (ja) | 2021-06-30 |
Family
ID=61274082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018022374A Active JP6896660B2 (ja) | 2017-03-06 | 2018-02-09 | 回転検出を備えた円形印刷メモリ装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US10396085B2 (ja) |
EP (1) | EP3373207B1 (ja) |
JP (1) | JP6896660B2 (ja) |
CN (1) | CN108538842B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10396085B2 (en) * | 2017-03-06 | 2019-08-27 | Xerox Corporation | Circular printed memory device with rotational detection |
US10796212B2 (en) | 2018-10-02 | 2020-10-06 | Xerox Corporation | Orientation-agnostic method to interface to printed memory label |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100932477B1 (ko) | 2004-07-22 | 2009-12-17 | 니폰덴신뎅와 가부시키가이샤 | 쌍안정 저항값 취득장치 및 그 제조방법과 금속 산화물 박막 및 그 제조방법 |
NO324539B1 (no) | 2005-06-14 | 2007-11-19 | Thin Film Electronics Asa | Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning |
FR2925748B1 (fr) | 2007-12-21 | 2010-01-29 | Commissariat Energie Atomique | Support de stockage de donnees et procede associe |
JP6299114B2 (ja) * | 2013-08-29 | 2018-03-28 | 富士通セミコンダクター株式会社 | 半導体装置及び半導体装置の製造方法 |
US9385306B2 (en) * | 2014-03-14 | 2016-07-05 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric mechanical memory and method |
CN104409632B (zh) * | 2014-05-31 | 2017-05-10 | 福州大学 | 一种多层结构有机阻变存储器的3d打印制备方法 |
US9460770B1 (en) * | 2015-09-01 | 2016-10-04 | Micron Technology, Inc. | Methods of operating ferroelectric memory cells, and related ferroelectric memory cells |
DE102015015854B4 (de) * | 2015-12-03 | 2021-01-28 | Namlab Ggmbh | Integrierte Schaltung mit einer ferroelektrischen Speicherzelle und Verwendung der integrierten Schaltung |
US10396085B2 (en) * | 2017-03-06 | 2019-08-27 | Xerox Corporation | Circular printed memory device with rotational detection |
-
2017
- 2017-03-06 US US15/450,856 patent/US10396085B2/en active Active
-
2018
- 2018-02-09 JP JP2018022374A patent/JP6896660B2/ja active Active
- 2018-02-09 CN CN201810136821.6A patent/CN108538842B/zh active Active
- 2018-02-21 EP EP18157975.6A patent/EP3373207B1/en active Active
-
2019
- 2019-08-26 US US16/551,145 patent/US11075210B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3373207A1 (en) | 2018-09-12 |
US11075210B2 (en) | 2021-07-27 |
EP3373207B1 (en) | 2020-10-14 |
US20190378847A1 (en) | 2019-12-12 |
JP6896660B2 (ja) | 2021-06-30 |
CN108538842A (zh) | 2018-09-14 |
US10396085B2 (en) | 2019-08-27 |
US20180254280A1 (en) | 2018-09-06 |
CN108538842B (zh) | 2021-01-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108919535B (zh) | 显示基板母板、显示基板及其制造方法、显示装置 | |
US9755503B2 (en) | Semiconductor device for controlling power-up sequences | |
US10754458B2 (en) | Touch screen and display device having the same | |
JP6896660B2 (ja) | 回転検出を備えた円形印刷メモリ装置 | |
TW201603037A (zh) | 記憶體對映 | |
CN108780373A (zh) | 具有周期性电极的菱形网格电极矩阵 | |
US10090033B2 (en) | PUF circuit and magnetoresistive device and control method thereof | |
US11112898B2 (en) | Force touch structure, force touch panel and display device | |
US10236075B1 (en) | Predicting tunnel barrier endurance using redundant memory structures | |
US10910436B2 (en) | Asymmetric selectors for memory cells | |
US20130235285A1 (en) | Touch panel assemblies and methods of manufacture | |
US9899099B2 (en) | Electronic device including fuse element having three or more junctions for reduced area and improved degree of integration | |
JP7015733B2 (ja) | 配向に対するロバスト性を有する円形印刷メモリシステム及び方法 | |
CN110751968A (zh) | 用于puf的电路结构、获取puf数据的方法及电子设备 | |
US20190213066A1 (en) | Memory device and method for guaranteeing a mapping table | |
Fieback et al. | PVT Analysis for RRAM and STT-MRAM-based Logic Computation-in-Memory | |
US8815613B2 (en) | Method of manufacturing touch sensing panel | |
TWI711049B (zh) | 記憶體裝置及資料寫入方法 | |
CN217982408U (zh) | 量子比特结构、量子芯片及量子计算机 | |
JP2014199698A (ja) | 半導体記憶装置及び半導体記憶装置の制御方法 | |
US20230253039A1 (en) | Memory device and method for operating the same | |
US20230015243A1 (en) | Display device | |
JPWO2016181609A1 (ja) | 半導体記憶装置 | |
KR20220069794A (ko) | 표시 장치 | |
CN118113530A (zh) | 芯片故障定位方法、装置、计算机设备和存储介质 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20180223 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20180514 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210205 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210205 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20210205 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20210322 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20210415 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20210430 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210510 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210609 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6896660 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |