CN108519158B - A kind of infrared detection method of GIS device over-heat inside defect - Google Patents
A kind of infrared detection method of GIS device over-heat inside defect Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 104
- 230000007547 defect Effects 0.000 title claims abstract description 99
- 239000004020 conductor Substances 0.000 claims abstract description 169
- 238000013021 overheating Methods 0.000 claims abstract description 31
- 230000002159 abnormal effect Effects 0.000 claims abstract description 16
- 238000004088 simulation Methods 0.000 claims description 119
- 238000000034 method Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 5
- 241000208199 Buxus sempervirens Species 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 18
- 230000006872 improvement Effects 0.000 description 11
- 229910018503 SF6 Inorganic materials 0.000 description 8
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 8
- 229960000909 sulfur hexafluoride Drugs 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000001757 thermogravimetry curve Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 238000005315 distribution function Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000746 Structural steel Inorganic materials 0.000 description 1
- 206010057040 Temperature intolerance Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008543 heat sensitivity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0096—Radiation pyrometry, e.g. infrared or optical thermometry for measuring wires, electrical contacts or electronic systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/03—Arrangements for indicating or recording specially adapted for radiation pyrometers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/48—Thermography; Techniques using wholly visual means
- G01J5/485—Temperature profile
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Abstract
The invention discloses a kind of infrared detection methods of GIS device over-heat inside defect, comprising: acquires the temperature of the shell of GIS device in real time by infrared detection equipment；Temperature mountain peak is found on shell by infrared detection equipment in preset time, to obtain the abnormal temperature difference of shell；The overheating of conductor is obtained according to temperature rise difference ratio, the normal temperature rise of conductor and the abnormal temperature difference of shell between the conductor of the shell and GIS device that acquire in advance；Wherein, the normal temperature rise of conductor is the temperature of the conductor under the GIS device normal operating condition and the difference of environment temperature；Status assessment is carried out to the GIS device according to the overheating of conductor.Using the embodiment of the present invention, GIS device can be accurately measured with the presence or absence of over-heat inside defect, while assessing the severity of over-heat inside defect.
Description
Technical field
The present invention relates to mistakes inside electric system fault diagnosis technical field more particularly to a kind of GIS device
The infrared detection method of thermal defect.
Background technique
GIS (Cubicle Gas-Insulated Switchgear) is reliable for operation because its occupied area is small, repair and maintenance period length etc.
Advantage is more and more widely used in the power system.However, when GIS device inner conductor poor contact, due to
Contact resistance becomes larger, and conductor superheating phenomenon (i.e. over-heat inside phenomenon) can be generated when load current flows through.Conductor overheat can draw
Internal circuit insulation ag(e)ing or direct fused inner circuit are played, to cause the short circuit of GIS device internal circuit, is formed great
Accident.The detection technique of GIS device over-heat inside defect mainly includes following methods at present:
Mode one: measurement loop resistance is mainly used for testing the contact resistance of switchgear dynamic/static contact, switchgear
Loop resistance depend primarily on the contact resistance of dynamic/static contact, the presence of contact resistance increases damage of the conductor when being powered
Consumption, increases the temperature of contact position, and the value of loop resistance, the size of the value of loop resistance can be obtained by measuring contact resistance
It can reflect the current-carrying capability of GIS device.
Mode two: electronic type thermometry is placed heat-sensitive sensor in equipment inner conductor, is directly supervised to its temperature
It surveys.
Mode three: Infrared Radiation Technology is based on relationship between object temperature and surface radiant energy, is passed by infrared temperature
Sensor receives object infrared energy, and then calculates the temperature value of measured target.
But the measurement method of above-mentioned three kinds of GIS devices over-heat inside defect, have the defects that certain.In mode one,
Measurement method is simple, it is easy to accomplish, but that there are errors is larger, cannot achieve the problems such as on-line checking；In mode two, due to sensing
Device is placed in high potential, vulnerable to electromagnetic interference, and to the more demanding of clean environment degree when GIS device internal operation, to lead
Sensor is caused to be difficult to be placed in；In mode three, infrared radiation temperature technology is by inner conductor metal surface emissivity, transmission medium
Influence of SF6 (sulfur hexafluoride) gas to factors such as infrared ray absorbings leads to missing by a mile for temperature measurement.
Summary of the invention
The purpose of the embodiment of the present invention is that providing a kind of infrared detection method of GIS device over-heat inside defect, Neng Gouzhun
Really measurement GIS device whether there is over-heat inside defect, while assess the severity of over-heat inside defect.
To achieve the above object, the embodiment of the present invention provides a kind of infrared detection method of GIS device over-heat inside defect,
Include:
Acquire the temperature of the shell of GIS device in real time by infrared detection equipment；
Temperature mountain peak is found by infrared detection equipment on the housing within a preset time, to obtain the shell
The abnormal temperature difference；
According between the conductor of the shell and the GIS device that acquire in advance temperature rise difference ratio, the conductor just
Room temperature rises and the abnormal temperature difference of the shell obtains the overheating of the conductor；Wherein, the normal temperature rise of the conductor is
The temperature of the conductor under the GIS device normal operating condition and the difference of environment temperature；
Status assessment is carried out to the GIS device according to the overheating of the conductor.
Compared with prior art, the infrared detection side of a kind of GIS device over-heat inside defect disclosed by the embodiments of the present invention
Method acquires the temperature of the shell of GIS device by the infrared detection equipment in real time, obtains the abnormal temperature difference of the shell, thus
The overheating of the conductor is obtained according to the temperature rise difference ratio between the shell and the conductor by acquiring in advance, in turn
Status assessment is carried out to the GIS device according to the overheating of the conductor.It solves and measures in GIS device in the prior art
Error larger problem when portion's overheating defect can accurately measure GIS device with the presence or absence of over-heat inside defect, while assess
The severity of over-heat inside defect.
As an improvement of the above scheme, the abnormal temperature difference of the shell includes the alternate temperature difference in temperature mountain peak, temperature mountain peak master
The bus temperature difference and the temperature mountain peak dependency structure section temperature difference；Wherein,
The alternate temperature difference in the temperature mountain peak refers to when the GIS device is the GIS device of three-phase separate case structure, works as institute
The focus area of a certain phase in GIS device is stated there are when temperature mountain peak, the vertex on the temperature mountain peak is identical as other two-phases
Location point temperature difference maximum value；
The temperature mountain peak main bus-bar temperature difference refer to when the GIS device be include the GIS device of two buses when, when one
Bus is there are when temperature mountain peak, the maximum value of the temperature difference of the vertex on temperature mountain peak location point identical with another bus；
The temperature mountain peak dependency structure section temperature difference refer to when GIS device be Threephase common-box structure GIS device when, when
The focus area of a certain phase in the GIS device is there are when temperature mountain peak, the vertex on the temperature mountain peak and other related knots
The maximum value of the temperature difference of the identical location point of structure section.
As an improvement of the above scheme, the temperature of the conductor is under the GIS device normal operating condition according to
The load current that conductor flows through obtains.
As an improvement of the above scheme, the solution procedure of the temperature rise difference ratio specifically includes:
The temperature that shell is simulated in GIS analog machine is acquired in real time by infrared detection equipment, to obtain the simulation
The temperature rise of shell；Wherein, the GIS analog machine is used to simulate the over-heat inside defect of the GIS device；
The temperature of simulation conductor in the GIS analog machine is acquired in real time by heat-sensitive sensor, to obtain the mould
The temperature rise of quasi- conductor；
The simulation shell and the simulation are obtained according to the temperature rise of the simulation shell and the temperature rise of the simulation conductor
Temperature rise difference ratio between conductor.
As an improvement of the above scheme, the GIS analog machine includes at least one defects simulation equipment, the Defect Modes
It proposes and is ready for use on self-heating so that over-heat inside defect occurs for the GIS analog machine, the defects simulation equipment is set to institute
It states in simulation conductor.
As an improvement of the above scheme, the simulation conductor includes high position conductor A phase, high-order conductor C phase and low level conductor B
Phase；Wherein, the defects simulation equipment is set in the high-order conductor A phase or the low level conductor B phase.
As an improvement of the above scheme, the defects simulation equipment includes the first plectane, the second plectane and guide rod, wherein
The both ends of the guide rod are separately connected first plectane and second plectane, the cross section of first plectane
Product is less than the cross-sectional area of second plectane.
As an improvement of the above scheme, described acquired in GIS analog machine in real time by infrared detection equipment simulates shell
Temperature specifically include:
Infrared detection region is set in the simulation upper part of the housing of GIS analog machine, by described in the acquisition of infrared detection equipment
Temperature of the maximum temperature as the simulation shell in infrared detection region.
As an improvement of the above scheme, the emissivity of the infrared detection equipment is 0.90-0.95, and the infrared detection is set
Standby shooting area is greater than the diameter of the shell of the GIS device, and the shooting distance of the infrared detection equipment is 3-5 meters, institute
The shooting elevation angle, the shooting angle of depression and shooting oblique angle for stating infrared detection equipment are 0-30 °.
As an improvement of the above scheme, the overheating according to the conductor comments GIS device progress state
Estimate and specifically include:
When the overheating of the conductor is greater than normal temperature rise and is less than standard temperature rise, determine that the GIS device is in
Special state；
When the overheating of the conductor is greater than standard temperature rise and is less than limit value temperature rise, determine that the GIS device is in
Abnormality；
When the overheating of the conductor is greater than limit value temperature rise, determine that the GIS device is in major defect state.
Detailed description of the invention
Fig. 1 is that temperature rise is poor in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
The flow chart of the solution procedure of ratio；
Fig. 2 is that GIS is simulated in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
The structural schematic diagram of equipment；
Fig. 3 is Defect Modes in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
Propose the standby structural schematic diagram being set in high-order conductor A phase；
Fig. 4 is Defect Modes in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
Propose the standby structural schematic diagram in low level conductor B phase；
Fig. 5 is Defect Modes in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
Propose standby schematic diagram one；
Fig. 6 is Defect Modes in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
Propose standby schematic diagram two；
Fig. 7 is infrared inspection in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
Survey the schematic diagram in region；
Fig. 8 is that temperature-sensitive passes in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
Sensor buries a schematic diagram；
Fig. 9 is different negative in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
The relation schematic diagram of the temperature rise of high-order conductor A phase and distance in the case of charged current；
Figure 10 is different negative in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
The relation schematic diagram of the temperature rise of low level conductor B phase and distance in the case of charged current；
Figure 11 is different negative in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
The temperature rise of shell in the case of charged current when high-order conductor A phase fault and the relation schematic diagram of distance；
Figure 12 is different negative in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
The temperature rise of shell in the case of charged current when low level conductor B phase fault and the relation schematic diagram of distance；
Figure 13 is different negative in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
The temperature rise difference ratio relation schematic diagram of high-order conductor A phase and low level conductor B phase in the case of charged current；
Figure 14 is a kind of process of the infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
Figure；
Figure 15 is related knot in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
The schematic diagram of structure section；
Figure 16 is that shell is burnt in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
The position view of point；
Figure 17 is temperature mountain in a kind of infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
Peak schematic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Need to acquire the temperature rise of conductor and shell in the GIS device in advance before carrying out status assessment to GIS device
Temperature rise between proportionate relationship, the temperature rise difference ratio between the conductor and the shell can be obtained according to the proportionate relationship
Value.When the GIS device is started to work, the temperature of the shell of the GIS device can be acquired in real time by infrared detection equipment
Degree, so as to obtain the temperature rise of the conductor according to the temperature rise difference ratio, does not need directly to measure by external equipment
The temperature rise of conductor in the GIS device will not destroy the structure of GIS device, while can accurately measure the temperature rise of the conductor.
Wherein, the solution procedure of the temperature rise difference ratio can be found in Fig. 1, and Fig. 1 is inside a kind of GIS device provided in an embodiment of the present invention
The flow chart of the solution procedure of temperature rise difference ratio in the infrared detection method of overheating defect；Include:
S11, the temperature that shell is simulated in GIS analog machine is acquired in real time by infrared detection equipment, to obtain described
Simulate the temperature rise of shell；
Wherein, the GIS analog machine is used to simulate the over-heat inside defect of the GIS device；
S12, the temperature for acquiring simulation conductor in the GIS analog machine in real time by heat-sensitive sensor, to obtain institute
State the temperature rise of simulation conductor；
S13, according to it is described simulation shell temperature rise and the simulation conductor temperature rise obtain the simulation shell with it is described
Temperature rise difference ratio between simulation conductor.
Wherein, the GIS analog machine includes at least one defects simulation equipment, and the defects simulation equipment is used for itself
It generates heat so that over-heat inside defect occurs for the GIS analog machine, the defects simulation equipment is set in the simulation conductor.Institute
Stating simulation conductor includes high position conductor A phase, high-order conductor C phase and low level conductor B phase；Wherein, the defects simulation equipment is set to
In the high position conductor A phase or the low level conductor B phase.
Wherein, the temperature for acquiring simulation shell in GIS analog machine in real time by infrared detection equipment specifically includes:
Infrared detection region is set in the simulation upper part of the housing of the GIS analog machine, is acquired by infrared detection equipment described infrared
Temperature of the maximum temperature as the simulation shell in detection zone.
Specifically, in step s 11, referring to fig. 2, the GIS analog machine can be the analog machine of 252kV, described
GIS analog machine uses three-phase combined type structure, and the length of entire cavity is 8.7m, in the simulation shell of the GIS analog machine
Filled with sulfur hexafluoride gas, the GIS analog machine is divided into fault simulation section 11, middle transition section 12 and normal analog section
13, wherein the fault simulation section 11 is used for simulated interior overheating defect, and the normal analog section 13 can be used to and failure mould
Quasi- section 11 compares, and the middle transition section 12 is for eliminating the fault simulation section 11 due to hot-spot to the normal mode
The heat transfer of quasi- section 13 influences, because heat transfer is that exponentially is decayed, reduces with the increase of distance.
Wherein, caused by the fever of GIS device is it is usually because contact is bad, contact resistance becomes larger at this time, in order to
This fever is simulated, the defects simulation equipment provided with I-shaped, the defects simulation equipment 100 is in the high-order conductor A
Placement location in phase is as shown in figure 3, the placement location such as Fig. 4 of the defects simulation equipment 100 in the low level conductor B phase
It is shown.
Preferably, referring to figs. 5 and 6, the defects simulation equipment includes the structural schematic diagram of the defects simulation equipment
First plectane 1, the second plectane 3 and guide rod 2；Wherein, the both ends of the guide rod 2 are separately connected first plectane 1 and described
Two plectanes 3, the cross-sectional area of first plectane 1 are less than the cross-sectional area of second plectane 3.Specifically, first circle
Plate 1, the guide rod 2 and second plectane 3 are cylindrical, and the diameter of first plectane 1 is 90mm, second plectane
3 diameter is 140mm.Through-hole there are four being all provided on first plectane 1 and second plectane 3, the effect of through-hole is to be used for
It wears and is bolted plectane and conductor, each through-hole is in circular hole, and in other embodiments, the shape of the through-hole is also possible to
Square or arbitrary shape, all within the scope of the present invention.The diameter of the guide rod 2 is 30mm, length 20mm, described
Guide rod 2 uses the biggish material Q235 (common carbon structural steel) of resistivity, can reduce the through-current capability of the guide rod 2, make
The guide rod 2 generates hot-spot in through-flow situation, so as to simulated interior overheating defect phenomenon.
Heat inside the GIS analog machine, will be described by the convection current and diffusion of the sulfur hexafluoride gas
The temperature of simulation conductor is transmitted on the simulation shell, at this time because the density of the sulfur hexafluoride gas is larger, described
The top of GIS analog machine can have the less sulfur hexafluoride gas, be not enough so as to cause convection current, and then described
Heat has been saved bit by bit on the top of GIS analog machine more, and high-temperature area is located at the top of the simulation shell.Passing through infrared inspection
When measurement equipment acquires the temperature of the simulation shell, at least three infrared detection regions are set on the top of the simulation shell
10, it can refer to Fig. 7, wherein the infrared detection region 10 is respectively arranged on the fault simulation section 11, the middle transition section 12
And the normal analog section 13, the maximum temperature in each infrared detection region 10 is acquired by the infrared detection equipment
Spend the temperature as the simulation shell.Preferably, can also the fault simulation section 11, the middle transition section 12 and
Multiple infrared detection regions 10 are respectively set in the normal analog section 13, all within the scope of the present invention.
Preferably, the simulation case temperature can be detected using the thermal infrared imager of model GL800, it is described
The heat sensitivity of thermal infrared imager is 0.015K, and warm wide scope is adjustable to 0.1K, and resolution ratio is 800 × 600 pixels.It is described red
Outer thermal imaging system releases infra-red radiation to the simulation shell, and infra-red radiation is focused on by the optical mirror slip of the thermal infrared imager
Detector is converted by signal amplification and A/D (analog-digital converter), causes the variation of voltage or resistance, voltage or resistance
Variation is read by the electronic component in thermal imaging system in the thermal infrared imager.The signal that the thermal infrared imager generates will turn
It changes electronic image (thermogram) into and is shown on the screen of the thermal infrared imager.Thermogram is by electronics
The target image being displayed on the screen after reason, in thermogram, on the surface of different tones and the simulation shell
Infrared radiation distribution is corresponding.
In the process, the thermal infrared imager can be checked and the radiation energy that issues on the surface of the simulation shell
Corresponding thermogram.Preferably, the temperature Cheng Han of the infrared energy of the simulation shell and the simulation shell
Number relationship, can refer to formula (1):
W=ε δ AT4Formula (1)；
Wherein, W is the transmission power of the simulation shell, and ε is the radiance of the simulation shell, takes 0.9 in this programme；
δ is Boltzmann constant；A is the surface area of the simulation shell；T is the absolute temperature of the simulation shell.
Specifically, in step s 12, the temperature of the simulation conductor can be obtained by heat-sensitive sensor, the temperature-sensitive
Sensor is set in the high-order conductor A phase or the low level conductor B phase, for acquiring the high-order conductor A phase or institute in real time
State the temperature of low level conductor B phase, specific heat-sensitive sensor to bury a schematic diagram as shown in Figure 8.Preferably, when the Defect Modes
When proposing for the high-order conductor A phase is set to, three heat-sensitive sensors can be placed in the high-order conductor A phase, and described
Heat-sensitive sensor is respectively arranged in the fault simulation section 11, the middle transition section 12 and the normal analog section 13；Work as institute
When stating defects simulation equipment set on the low level conductor B phase, three heat-sensitive sensors can be placed in the low level conductor B phase
Device, and the heat-sensitive sensor is respectively arranged on the fault simulation section 11, the middle transition section 12 and the normal analog section
In 13.Preferably, referring to Fig. 8,16 heat-sensitive sensors can also be placed in the high-order conductor A phase, the a-p in Fig. 7 is equal
Indicate heat-sensitive sensor, wherein the temperature that placed near the defects simulation equipment is main focus area, therefore described
Heat-sensitive sensor to bury dot density larger.Similarly, 16 heat-sensitive sensors can also be placed in the low level conductor B phase, such as
Shown in Fig. 8.The temperature of each heat-sensitive sensor is acquired, in real time so as to obtain the high-order conductor A phase or described low
The temperature of position conductor B phase.
Specifically, in step s 13, obtaining the temperature of each heat-sensitive sensor, while obtaining the infrared detection
The temperature for the simulation shell that equipment detects can be set different described when the GIS analog machine is started to work
The simulation load current of GIS analog machine, for example the simulation load current is respectively 2000A, 1500A and 1000A.
When the GIS analog machine is started to work, the simulation is acquired by the heat-sensitive sensor every 30 minutes
The temperature of conductor, to obtain the temperature rise of the simulation conductor, wherein the temperature rise is the simulation conductor (or the simulation
Shell) temperature and environment temperature difference.When the temperature rise at the same position of the simulation conductor when 1 is small it is interior be less than 0.5K when,
Temperature rise reaches stable.
When the defects simulation equipment is set in the high-order conductor A phase, after temperature rise reaches stable, the high position conductor
Temperature rise in A phase at different location as shown in figure 9, in figure 0 point of distance be the defects simulation equipment placement location, as institute
The fault point of high-order conductor A phase is stated, when the high position conductor A phase over-heat inside defect, in 2000A, 1500A and 1000A electric current
The corresponding temperature rise in lower fault point is respectively 70.3K, 51.8K and 26.3K；
When the defects simulation equipment is set in the low level conductor B phase, after temperature rise reaches stable, the low level conductor
Temperature rise in B phase at different location is as shown in Figure 10,0 point of the distance placement location for the defects simulation equipment in figure, as
The fault point of the low level conductor B phase, when the low level conductor B phase over-heat inside defect, in 2000A, 1500A and 1000A electricity
Flowing down the corresponding temperature rise in fault point is respectively 62.08K, 39.41K and 23.6K.
According to Fig. 9 and Figure 10 it is found that the corresponding temperature rise in fault point of the low level conductor B phase high-order conductor A phase
The corresponding temperature rise in fault point it is low, this is because cavity of the fault point of the low level conductor B phase close to the GIS analog machine
Lower part, the sulfur hexafluoride gas for participating in thermal convection is more, and convection current is more abundant, to take away heat more.In difference
Load current conditions under, it is described a high position conductor A phase and the low level conductor B phase temperature rise show identical variation with distance
Trend, temperature rise are reduced from fault point to both sides, and are higher than distal end close to the temperature rise rate of descent of fault point.This is because the mould
The temperature rise of quasi- conductor is mainly determined by simulation conductor self-heating and heat transfer, and the self-heating of the simulation conductor rises and dominates
Effect.Since the conduction efficiency of the simulation conductor is low, temperature rise declines rapidly from fault point to both sides.When far from fault point
When, for example in normal analog section, temperature rise decline is slow, this is because temperature rise herein is almost simulation conductor self-heating,
Heat transfer influences smaller.
When the GIS analog machine is started to work, the high-order conductor A phase fault when institute under different load current conditions
The temperature rise for stating simulation shell is as shown in figure 11 with the variation tendency of distance, the fault point pair under 2000A, 1500A and 1000A electric current
The shell temperature rise answered is respectively 6.19K, 4.71K and 2.23K.Under different load current conditions when the low level conductor B phase fault
The temperature rise of the simulation shell is as shown in figure 12 with the variation tendency of distance, the fault point under 2000A, 1500A and 1000A electric current
Corresponding simulation shell temperature rise is respectively 4.50K, 3.12K and 1.70K.According to Figure 11 and Figure 12 it is found that the low level conductor B phase
The corresponding temperature rise in the fault point high-order conductor A phase the corresponding temperature rise in fault point it is low, the temperature rise with above-mentioned simulation conductor
Situation is identical, and the temperature rise of the simulation shell mostlys come from the convective heat transfer of sulfur hexafluoride gas in the GIS analog machine,
The trend gradually decreased is showed with distance.
By dividing the case where simulation conductor described in the GIS analog machine and temperature rise for simulating shell
Analysis finds that the temperature rise difference of simulation conductor described in fault point is close with the radial ratio of temperature rise difference of the simulation shell of corresponding points
Seemingly it is fixed value, wherein the calculating process of the temperature rise difference ratio can be found in formula (2):
Wherein, S is the temperature rise difference ratio, and Ta1 is the simulation conductor temperature rise of the fault point, and Ta2 is that the simulation is led
Temperature rise under body normal operation, Tb1 are the simulation shell temperature rise of the fault point, and Tb2 is that the simulation shell is normally transported
Temperature rise in row situation.It (is acquired at this time according to the simulation conductor temperature that the heat-sensitive sensor can collect the fault point
Close to the temperature of the heat-sensitive sensor of the defects simulation equipment), then subtract environment temperature and the fault point can be obtained
Simulation conductor temperature rise Ta1；The temperature under the simulation conductor normal operation can be collected according to the heat-sensitive sensor
Degree (acquires the temperature of the heat-sensitive sensor close to the normal analog section) at this time, then subtracts environment temperature and institute can be obtained
State the temperature rise Ta2 under simulation conductor normal operation；The fault point can be collected according to the infrared detection equipment
It simulates case temperature (the infrared detection equipment detects the temperature close to the region of the defects simulation equipment at this time), then
Subtracting environment temperature can be obtained the simulation shell temperature rise Tb1 of the fault point；It can be acquired according to the infrared detection equipment
To the temperature for simulating shell described when the GIS analog machine operates normally (at this time described in the infrared detection equipment detection
The temperature of normal analog section), then subtract environment temperature and the temperature rise simulated under shell normal operation can be obtained
Tb2。
According to the temperature rise difference ratio relation of formula (2) available high-order the conductor A phase and the low level conductor B phase,
As shown in figure 13, the high-order conductor A phase is when simulating load current is 2000A, 1500A, 1000A, the temperature rise difference ratio
Respectively 8.83,9.00,9.79, the low level conductor B phase are described when simulating load current is 2000A, 1500A, 1000A
Temperature rise difference ratio is respectively 10.30,10.01,10.53.Thus, the temperature rise difference ratio is by size of current and fault point
Position influence is smaller, can be 10 by the temperature rise difference ratio value in the present invention.
Preferably, after acquiring the temperature rise difference ratio, scene can be carried out to GIS device according to the temperature rise difference ratio
Detection, at the scene detect during, can not by the GIS device be arranged heat-sensitive sensor can be in the hope of described
The temperature of conductor, so as to determine whether the GIS device occurs over-heat inside defect, specific detection process can refer to figure
14, Figure 14 be a kind of flow chart of the infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention；Packet
It includes:
S1, acquired in real time by infrared detection equipment GIS device shell temperature；
S2, temperature mountain peak found by infrared detection equipment on the housing within a preset time, to obtain described
The abnormal temperature difference of shell；
S3, the temperature rise difference ratio according between the shell acquired in advance and the conductor of the GIS device, the conductor
The abnormal temperature difference of normal temperature rise and the shell obtains the overheating of the conductor；
Wherein, the normal temperature rise of the conductor be the GIS device normal operating condition under the conductor temperature with
The difference of environment temperature；Wherein, the temperature of the conductor flows through under the GIS device normal operating condition according to the conductor
Load current obtain；Wherein, the load current includes inlet-outlet line load current and bus load electric current.
S4, status assessment is carried out to the GIS device according to the overheating of the conductor.
Preferably, the abnormal temperature difference of the shell include the alternate temperature difference in temperature mountain peak, the temperature mountain peak main bus-bar temperature difference and
The temperature mountain peak dependency structure section temperature difference；Wherein,
The alternate temperature difference in the temperature mountain peak refers to when the GIS device is the GIS device of three-phase separate case structure, works as institute
The focus area of a certain phase in GIS device is stated there are when temperature mountain peak, the vertex on the temperature mountain peak is identical as other two-phases
Location point temperature difference maximum value；
The temperature mountain peak main bus-bar temperature difference refer to when the GIS device be include the GIS device of two buses when, when one
Bus is there are when temperature mountain peak, the maximum value of the temperature difference of the vertex on temperature mountain peak location point identical with another bus；
The temperature mountain peak dependency structure section temperature difference refer to when GIS device be Threephase common-box structure GIS device when, when
The focus area of a certain phase in the GIS device is there are when temperature mountain peak, the vertex on the temperature mountain peak and other related knots
The maximum value of the temperature difference of the identical location point of structure section.Wherein, the dependency structure section refers in the GIS device, with institute
Stating focus area is boundary, and the GIS device is divided into GIS sections multiple, GIS sections of internal junctions having the same of many of them
Structure and identical temperature transmission characteristic, and when operating normally, when by identical load current, the shell of the GIS device
Temperature distributing characteristic having the same is referred to as dependency structure section for GIS sections with the above characteristics, can refer to Figure 15, in A phase
The region of middle vertex A1, A2, A3, A4 composition, the region that B1, B2, B3, B4 are formed in B phase, C1, C2, C3, C4 group in C phase
At region, dependency structure section each other.Preferably, the focus area includes the focus area containing temperature mountain peak and do not contain
The focus area on temperature mountain peak.
Specifically, the focus area is the focus area of the shell of the GIS device, as GIS device referring to Figure 16
Case surface project to the housing surface area on shell reference area.
Specifically, the shell reference area is centered on subpoint of the shell focus on datum level, with described outer
The diameter of shell is the square area that side length is drawn on datum level.The shell focus is case surface, conductor contacting section
With the crosspoint of shell focus face；In general, there are two shell focuses for each conductor contacting section, relatively in the GIS device
For the people of observation, the point before shell is referred to as front focus, the focus after the subsequent point of shell is referred to as.
Specifically, the conductor contacting section was the radial section of the centrical GIS device of conductor contact portion.Institute
The central axes that shell focus face was the GIS device are stated, and perpendicular to the face of datum level.
Specifically, the datum level is, for the shell of horizontally disposed GIS device, to cross institute in GIS substation field
Shell central axes are stated, and perpendicular to the face of horizontal plane, is referred to as to be arranged horizontally the datum level of GIS shell；For arranging GIS vertically
The shell of equipment, the datum level for the horizontally disposed GIS shell for taking its adjacent are benchmark face.
Specifically, reference direction shown in figure is the direction perpendicular to datum level.Shell datum mark shown in figure is
The crosspoint of case surface, conductor contacting section and datum level.What contact center shown in figure connected between conductor
The contact position of contact, wherein the schematic diagram of contact can refer to the simple schematic diagram of the contact in figure.
Specifically, in step sl, it is also necessary to acquire ambient humidity, the ambient humidity can be used for correcting described infrared
The error of detection device.The emissivity of the infrared detection equipment is 0.90-0.95, the shooting area of the infrared detection equipment
Greater than the diameter of the shell of the GIS device, the shooting distance of the infrared detection equipment is 3-5 meters, and the infrared detection is set
The standby shooting elevation angle, the shooting angle of depression and shooting oblique angle is 0-30 °.Preferably, the shooting elevation angle is the infrared detection
When equipment is from lower to some shell focus of photographs, the optical center point of the infrared detection equipment and the shell focus it
Between projection line of the line on conductor contacting section and horizontal plane at angle.The shooting angle of depression is that the infrared detection is set
It is standby when shooting some shell focus downwards from eminence, between the optical center point and the shell focus of the infrared detection equipment
Projection line of the line on conductor contacting section and horizontal plane at angle.The shooting oblique angle is the infrared detection equipment
When shooting some shell focus, the line between the optical center point and the shell focus of the infrared detection equipment is in level
The projection line in face and conductor contacting section at angle.
Preferably, when detecting the temperature of shell in the GIS device using the infrared detection equipment, to be easy to implement
To the Precision measurement of shell Temperature Distribution, shooting area should be small as far as possible, and general there are two types of styles of shooting, including generally survey
It measures and accurately measures.For the GIS device of three-phase separate box formula, general measure should be carried out first, the general measure is i.e. to institute
The GIS device for stating three-phase separate box formula carries out whole scan；And when the shooting area of the infrared detection equipment is difficult to cover three
It when phase range structure, needs to take single-phase separated shooting, when the temperature difference at same position is more than 1K, can be accurately measured again,
Described accurately measure carries out partial sweep (i.e. part is shot) to the GIS device of the three-phase separate box formula, and measurement result is more
Accurately.To the GIS device of three-phase combined type, there are when two double-bus, the temperature difference of Ying Shouxian general measure, such as two buses is more than
When 1K, it can be accurately measured again.
Specifically, in step s 2, the infrared detection equipment can be passed through after the GIS device runs a period of time
Acquire the temperature mountain peak of the shell.With reference to Figure 17, there are thermoisopleths, temperature mountain in the shooting area of the infrared detection equipment
Peak, temperature mountain peak vertex, shell focus and atlas analysis region.When the infrared detection equipment is adopted in the shooting area
When collecting temperature mountain peak, vertex Max corresponding temperature in the temperature mountain peak is then the highest that the infrared detection equipment detects
Temperature, the corresponding temperature of Min is then minimum temperature in figure.
At this point, in step s3, when the GIS device is the GIS device of three-phase separate case structure, when the GIS is set
The focus area of a certain phase in standby obtains identical in other two-phases with the vertex on the temperature mountain peak there are when temperature mountain peak
The temperature of location point, taking the vertex on the temperature mountain peak with the temperature difference in the identical location point of other two-phases is then the shell
The abnormal temperature difference (i.e. the alternate temperature difference in temperature mountain peak).The abnormal temperature difference of the shell is the simulation of fault point described in formula (2)
The difference of shell temperature rise Tb1 and the temperature rise Tb2 under the simulation shell normal operation, i.e., denominator in the described formula (2).This
When, according to the normal temperature rise of the conductor, i.e. Ta2 in formula (2) and the temperature rise difference ratio S is available described leads
Ta1 in the overheating of body, i.e. formula (2).In addition, the temperature mountain peak main bus-bar temperature difference, the temperature mountain peak correlation knot
The structure section temperature difference asks method with reference to the above process, and details are not described herein.
Preferably, the atlas analysis region is when there are temperature mountain peak, and with temperature maximum point, (i.e. temperature mountain peak is pushed up
Point) centered on, the side length of the focus area of a quarter is the square area of side length.
Specifically, when being shot using the infrared detection equipment, the surface three dimension temperature of the shell of the GIS device
Degree distribution, is represented by three dimensional temperature distribution function:
Tg=G (x, y, z) formula (3)；Wherein, the three dimensional temperature distribution function is the shell of the GIS device
Surface each point is using shell focus as origin, and the central axial of GIS device is x-axis, and vertical direction is the stereoscopic three-dimensional coordinate of z-axis
Value, y-axis is vertical with x-axis and in same level, and unit is millimeter.The surface three dimension Temperature Distribution of GIS shell is in shooting side
Projection to the infrared detection equipment forms the Temperature Distribution on plane map upwards, and the Temperature Distribution on the plane map is referred to as
For map Temperature Distribution.
Specifically, when atlas analysis region shown in the figure is using infrared detection equipment shooting, it is right on map
The range of the focus area for the GIS shell answered is referred to as map focus area.Specifically, the figure in the map focus area
Compose temperature profile function are as follows:
Tp=P (u, v) formula (4)；Wherein, the map temperature profile function is with infrared detection equipment knowledge
Other shell focus is origin, and horizontal direction is u axis, and vertical direction is the planar two dimensional coordinate value of v axis, and unit is pixel.
For the map temperature profile function there are maximum and minimum, the difference of maximum and minimum is greater than 0.5K, maximum and pole
It is divided into 10 temperature steps between small value, i.e., each step at least 0.05K links up each step temperature identical point to form 10
Thermoisopleth, when at least 5 thermoisopleths are closures, i.e., it is believed that the map focus area there are temperature mountain peaks.Temperature
The maximum point of temperature is referred to as temperature mountain peak vertex in the region of mountain peak.
Specifically, in step s 4, carrying out status assessment, root to the GIS device according to the overheating of the conductor
According to the temperature rise situation of the conductor, the severity of the GIS device over-heat inside defect has been subjected to state demarcation, it is specific to wrap
It includes:
When the overheating of the conductor is greater than normal temperature rise and is less than standard temperature rise, determine that the GIS device is in
Special state；
When the overheating of the conductor is greater than standard temperature rise and is less than limit value temperature rise, determine that the GIS device is in
Abnormality；
When the overheating of the conductor is greater than limit value temperature rise, determine that the GIS device is in major defect state.
It is advised specifically, being standardized according to GB/T11022 (common specifications for high-voltage switchgear and controlgear standards)
Fixed, GIS device inner conductor allows temperature rise maximum value to be 75K.Therefore, the limit value temperature rise can be 75K, the standard temperature rise
It can be set as 50K, the normal temperature rise can be set as 10K.In other embodiments, the standard temperature rise and described normal
The value of temperature rise can be according to the operating condition of the CIS equipment come any given, all within the scope of the present invention.Work as temperature rise
When greater than 10K and being less than 50K, equipment should arouse attention, and reinforce tracking；When temperature rise is greater than 50K and is less than 75K, equipment exists
It is abnormal, operating load should be controlled, tracking is reinforced；When temperature rise is greater than 75K, there are major defects for equipment, should be arranged as soon as possible disintegration
It checks.In practical applications, the present invention does not need disintegration GIS device, Accurate Diagnosis can go out in the case where GIS device is charged
The severity of defect is assessed inside GIS device, simultaneously with the presence or absence of overheating defect more particularly to find GIS device over-heat inside
Initial stage and observe its development trend.
Compared with prior art, the infrared detection side of a kind of GIS device over-heat inside defect disclosed by the embodiments of the present invention
Method acquires the temperature of the shell of GIS device by the infrared detection equipment in real time, obtains the abnormal temperature difference of the shell, thus
The overheating of the conductor is obtained according to the temperature rise difference ratio between the shell and the conductor by acquiring in advance, in turn
Status assessment is carried out to the GIS device according to the overheating of the conductor.It solves and measures in GIS device in the prior art
Error larger problem when portion's overheating defect can accurately measure GIS device with the presence or absence of over-heat inside defect, while assess
The severity of over-heat inside defect.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (9)
1. a kind of infrared detection method of GIS device over-heat inside defect characterized by comprising
Acquire the temperature of the shell of GIS device in real time by infrared detection equipment；
Temperature mountain peak is found by infrared detection equipment on the housing within a preset time, to obtain the different of the shell
Room temperature is poor；
According to the positive room temperature of temperature rise difference ratio, the conductor between the conductor of the shell and the GIS device that acquire in advance
It rises and the abnormal temperature difference of the shell obtains the overheating of the conductor；Wherein, the normal temperature rise of the conductor is described
The temperature of the conductor under GIS device normal operating condition and the difference of environment temperature；
Status assessment is carried out to the GIS device according to the overheating of the conductor；
Wherein, the solution procedure of the temperature rise difference ratio specifically includes:
The temperature that shell is simulated in GIS analog machine is acquired in real time by infrared detection equipment, to obtain the simulation shell
Temperature rise；Wherein, the GIS analog machine is used to simulate the over-heat inside defect of the GIS device；
It acquires the temperature of simulation conductor in the GIS analog machine in real time by heat-sensitive sensor, is led to obtain the simulation
The temperature rise of body；
The simulation shell and the simulation conductor are obtained according to the temperature rise of the simulation shell and the temperature rise of the simulation conductor
Between temperature rise difference ratio；Meet following formula:
Wherein, S is the temperature rise difference ratio, and Ta1 is the simulation conductor temperature rise of fault point, and Ta2 is that the simulation conductor is normally transported
Temperature rise in row situation, Tb1 are the simulation shell temperature rise of fault point, and Tb2 is the temperature under the simulation shell normal operation
It rises.
2. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
The abnormal temperature difference of shell includes the alternate temperature difference in temperature mountain peak, the temperature mountain peak main bus-bar temperature difference and temperature mountain peak dependency structure Duan Wen
Difference；Wherein,
The alternate temperature difference in the temperature mountain peak refers to when the GIS device is the GIS device of three-phase separate case structure, when described
For the focus area of a certain phase in GIS device there are when temperature mountain peak, the vertex on the temperature mountain peak is identical with other two-phases
The maximum value of the temperature difference of location point；
The temperature mountain peak main bus-bar temperature difference refer to when the GIS device be include the GIS device of two buses when, as a mother
Line is there are when temperature mountain peak, the maximum value of the temperature difference of the vertex on temperature mountain peak location point identical with another bus；
The temperature mountain peak dependency structure section temperature difference refers to when GIS device is the GIS device of Threephase common-box structure, when described
The focus area of a certain phase in GIS device is there are when temperature mountain peak, the vertex on the temperature mountain peak and other dependency structure sections
The maximum value of the temperature difference of identical location point.
3. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
The temperature of conductor obtains under the GIS device normal operating condition according to the load current that the conductor flows through.
4. a kind of infrared detection method of GIS device over-heat inside defect as claimed in claim 3, which is characterized in that described
GIS analog machine includes at least one defects simulation equipment, and the defects simulation equipment is for self-heating so that the GIS mould
The raw over-heat inside defect of preparation is proposed, the defects simulation equipment is set in the simulation conductor.
5. a kind of infrared detection method of GIS device over-heat inside defect as claimed in claim 4, which is characterized in that described
Simulation conductor includes high position conductor A phase, high-order conductor C phase and low level conductor B phase；Wherein, the defects simulation equipment is set to institute
It states in high-order conductor A phase or the low level conductor B phase.
6. a kind of infrared detection method of GIS device over-heat inside defect as claimed in claim 4, which is characterized in that described
Defects simulation equipment includes the first plectane, the second plectane and guide rod, wherein
The both ends of the guide rod are separately connected first plectane and second plectane, and the cross-sectional area of first plectane is small
In the cross-sectional area of second plectane.
7. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
It is specifically included by the temperature that infrared detection equipment acquires simulation shell in GIS analog machine in real time:
Infrared detection region is set in the simulation upper part of the housing of GIS analog machine, is acquired by infrared detection equipment described infrared
Temperature of the maximum temperature as the simulation shell in detection zone.
8. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
The emissivity of infrared detection equipment is 0.90-0.95, and the shooting area of the infrared detection equipment is greater than the shell of the GIS device
The diameter of body, the shooting distance of the infrared detection equipment are 3-5 meters, and the shooting elevation angle of the infrared detection equipment, shooting are bowed
Angle and shooting oblique angle are 0-30 °.
9. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
Status assessment is carried out to the GIS device according to the overheating of the conductor to specifically include:
When the overheating of the conductor is greater than normal temperature rise and is less than standard temperature rise, determine that the GIS device is in special
State；
When the overheating of the conductor is greater than standard temperature rise and is less than limit value temperature rise, determine that the GIS device is in abnormal
State；
When the overheating of the conductor is greater than limit value temperature rise, determine that the GIS device is in major defect state.
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| CN112816789A (en) * | 2021-01-29 | 2021-05-18 | 深圳博创汇能科技有限公司 | Conductor internal resistance abnormity identification method, device, equipment and computer storage medium |
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