CN108519158A - A kind of infrared detection method of GIS device over-heat inside defect - Google Patents
A kind of infrared detection method of GIS device over-heat inside defect Download PDFInfo
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- CN108519158A CN108519158A CN201810188277.XA CN201810188277A CN108519158A CN 108519158 A CN108519158 A CN 108519158A CN 201810188277 A CN201810188277 A CN 201810188277A CN 108519158 A CN108519158 A CN 108519158A
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- 238000001514 detection method Methods 0.000 title claims abstract description 105
- 230000007547 defect Effects 0.000 title claims abstract description 100
- 239000004020 conductor Substances 0.000 claims abstract description 167
- 238000013021 overheating Methods 0.000 claims abstract description 31
- 230000002159 abnormal effect Effects 0.000 claims abstract description 16
- 238000004088 simulation Methods 0.000 claims description 117
- 238000000034 method Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 5
- 241000208199 Buxus sempervirens Species 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 18
- 230000006872 improvement Effects 0.000 description 11
- 229910018503 SF6 Inorganic materials 0.000 description 8
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229960000909 sulfur hexafluoride Drugs 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 238000012546 transfer Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001757 thermogravimetry curve Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 238000005315 distribution function Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000746 Structural steel Inorganic materials 0.000 description 1
- 206010057040 Temperature intolerance Diseases 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008543 heat sensitivity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0096—Radiation pyrometry, e.g. infrared or optical thermometry for measuring wires, electrical contacts or electronic systems
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/03—Arrangements for indicating or recording specially adapted for radiation pyrometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/48—Thermography; Techniques using wholly visual means
- G01J5/485—Temperature profile
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
Abstract
The invention discloses a kind of infrared detection methods of GIS device over-heat inside defect, including：Acquire the temperature of the shell of GIS device in real time by infrared detection equipment；Temperature mountain peak is found on shell by infrared detection equipment in preset time, to obtain the abnormal temperature difference of shell；Poor ratio is risen according to the temperature between the conductor of the shell and GIS device that acquire in advance, the positive room temperature of conductor rises and the abnormal temperature difference of shell obtains the overheating of conductor；Wherein, the positive room temperature of conductor is upgraded to the difference of the temperature and environment temperature of the conductor under the GIS device normal operating condition；Status assessment is carried out to the GIS device according to the overheating of conductor.Embodiment using the present invention can accurately measure GIS device and whether there is over-heat inside defect, while assess the severity of over-heat inside defect.
Description
Technical field
The present invention relates to mistakes inside electric system fault diagnosis technical field more particularly to a kind of GIS device
The infrared detection method of thermal defect.
Background technology
GIS (Cubicle Gas-Insulated Switchgear) is reliable for operation because its floor space is small, repair and maintenance period length etc.
Advantage is more and more widely used in the power system.However, when GIS device inner conductor poor contact, due to
Contact resistance becomes larger, and conductor superheating phenomenon (i.e. over-heat inside phenomenon) is will produce when load current flows through.Conductor overheat can draw
Internal circuit insulation ag(e)ing or direct fused inner circuit are played, to cause the short circuit of GIS device internal circuit, is formed great
Accident.The detection technique of GIS device over-heat inside defect includes mainly following methods at present：
Mode one：Measuring loop resistance is mainly used for testing the contact resistance of switchgear dynamic/static contact, switchgear
Loop resistance depend primarily on the contact resistance of dynamic/static contact, the presence of contact resistance increases damage of the conductor when being powered
Consumption, makes the temperature of contact position increase, and the value of loop resistance, the size of the value of loop resistance are can be obtained by measuring contact resistance
It can reflect the current-carrying capability of GIS device.
Mode two：Electronic type thermometry is placed heat-sensitive sensor in equipment inner conductor, is directly supervised to its temperature
It surveys.
Mode three：Infrared Radiation Technology is based on relationship between object temperature and surface radiant energy, is passed by infrared temperature
Sensor receives object infrared energy, and then calculates the temperature value of measured target.
But the measurement method of above-mentioned three kinds of GIS devices over-heat inside defect, there is certain defect.In mode one,
Measurement method is simple, it is easy to accomplish, but that there are errors is larger, cannot achieve the problems such as on-line checking；In mode two, due to sensing
Device is placed in high potential, easily by electromagnetic interference, and to the more demanding of clean environment degree when GIS device internal operation, to lead
It is difficult merging to cause sensor；In mode three, infrared radiation temperature technology is by inner conductor metal surface emissivity, transmission medium
Influence of SF6 (sulfur hexafluoride) gases to factors such as infrared ray absorbings leads to missing by a mile for temperature measurement.
Invention content
The purpose of the embodiment of the present invention is to provide a kind of infrared detection method of GIS device over-heat inside defect, Neng Gouzhun
It really measures GIS device and whether there is over-heat inside defect, while assessing the severity of over-heat inside defect.
To achieve the above object, the embodiment of the present invention provides a kind of infrared detection method of GIS device over-heat inside defect,
Including：
Acquire the temperature of the shell of GIS device in real time by infrared detection equipment；
Temperature mountain peak is found by infrared detection equipment on the housing in preset time, to obtain the shell
The abnormal temperature difference；
Poor ratio, the conductor are being risen according to the temperature between the shell and the conductor of the GIS device acquired in advance just
Room temperature rises and the abnormal temperature difference of the shell obtains the overheating of the conductor；Wherein, the positive room temperature of the conductor is upgraded to
The difference of the temperature and environment temperature of the conductor under the GIS device normal operating condition；
Status assessment is carried out to the GIS device according to the overheating of the conductor.
Compared with prior art, the infrared detection side of a kind of GIS device over-heat inside defect disclosed by the embodiments of the present invention
Method acquires the temperature of the shell of GIS device by the infrared detection equipment in real time, obtains the abnormal temperature difference of the shell, to
Overheating of the difference than being worth to the conductor is risen according to the temperature between the shell by acquiring in advance and the conductor, in turn
Status assessment is carried out to the GIS device according to the overheating of the conductor.It solves and measures in GIS device in the prior art
Error larger problem when portion's overheating defect can accurately measure GIS device and whether there is over-heat inside defect, while assess
The severity of over-heat inside defect.
As the improvement of said program, the abnormal temperature difference of the shell includes the alternate temperature difference in temperature mountain peak, temperature mountain peak master
The busbar temperature difference and the temperature mountain peak dependency structure section temperature difference；Wherein,
The alternate temperature difference in the temperature mountain peak refers to working as institute when the GIS device is the GIS device of three-phase separate case structure
The focus area of a certain phase in GIS device is stated there are when temperature mountain peak, the vertex on the temperature mountain peak is identical as other two-phases
Location point temperature difference maximum value；
The temperature mountain peak main bus-bar temperature difference refers to when it includes the GIS device of two busbares that the GIS device, which is, when one
Busbar is there are when temperature mountain peak, the maximum value of the temperature difference of the vertex on temperature mountain peak location point identical with another busbar；
The temperature mountain peak dependency structure section temperature difference refer to when GIS device be Threephase common-box structure GIS device when, when
The focus area of a certain phase in the GIS device is there are when temperature mountain peak, the vertex on the temperature mountain peak and other related knots
The maximum value of the temperature difference of the identical location point of structure section.
As the improvement of said program, the temperature of the conductor is under the GIS device normal operating condition according to
The load current that conductor flows through obtains.
As the improvement of said program, the solution procedure that the temperature rises poor ratio specifically includes：
The temperature that shell is simulated in GIS analog machines is acquired in real time by infrared detection equipment, to obtain the simulation
The Wen Sheng of shell；Wherein, the GIS analog machines are used to simulate the over-heat inside defect of the GIS device；
The temperature for acquiring simulation conductor in the GIS analog machines in real time by heat-sensitive sensor, to obtain the mould
The Wen Sheng of quasi- conductor；
The simulation shell and the simulation are obtained according to the Wen Sheng of simulation conductor described in the Wen Shengyu of the simulation shell
Temperature between conductor rises poor ratio.
As the improvement of said program, the GIS analog machines include at least one defects simulation equipment, the Defect Modes
It proposes and is ready for use on self-heating so that over-heat inside defect occurs for the GIS analog machines, the defects simulation equipment is set to institute
It states in simulation conductor.
As the improvement of said program, the simulation conductor includes high position conductor A phases, high-order conductor C phases and low level conductor B
Phase；Wherein, the defects simulation equipment is set in the high-order conductor A phases or the low level conductor B phases.
As the improvement of said program, the defects simulation equipment includes the first plectane, the second plectane and guide rod, wherein
The both ends of the guide rod are separately connected first plectane and second plectane, the cross section of first plectane
Cross-sectional area of the product less than second plectane.
As the improvement of said program, described acquired in real time in GIS analog machines by infrared detection equipment simulates shell
Temperature specifically include：
In the simulation upper part of the housing of GIS analog machines setting infrared detection region, described in the acquisition of infrared detection equipment
Temperature of the maximum temperature as the simulation shell in infrared detection region.
As the improvement of said program, the emissivity of the infrared detection equipment is 0.90~0.95, the infrared detection
The shooting area of equipment is more than the diameter of the shell of the GIS device, and the shooting distance of the infrared detection equipment is 3~5 meters,
The shooting elevation angle, the shooting angle of depression and the shooting oblique angle of the infrared detection equipment are 0~30 °.
As the improvement of said program, the overheating according to the conductor carries out state to the GIS device and comments
Estimate and specifically includes：
When the overheating of the conductor is more than positive room temperature liter and is risen less than standard temperature, judge that the GIS device is in
Special state；
When the overheating of the conductor is more than standard temperature liter and is risen less than limit value temperature, judge that the GIS device is in
Abnormality；
When the overheating of the conductor, which is more than limit value temperature, to be risen, judge that the GIS device is in major defect state.
Description of the drawings
Fig. 1 is that a kind of infrared detection method medium temperature liter of GIS device over-heat inside defect provided in an embodiment of the present invention is poor
The flow chart of the solution procedure of ratio；
Fig. 2 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in GIS simulate
The structural schematic diagram of equipment；
Fig. 3 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in Defect Modes
Propose the standby structural schematic diagram being set in high-order conductor A phases；
Fig. 4 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in Defect Modes
Propose the standby structural schematic diagram in low level conductor B phases；
Fig. 5 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in Defect Modes
Propose standby schematic diagram one；
Fig. 6 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in Defect Modes
Propose standby schematic diagram two；
Fig. 7 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in infrared inspection
Survey the schematic diagram in region；
Fig. 8 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in temperature-sensitive pass
Sensor buries a schematic diagram；
Fig. 9 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in it is different negative
The relation schematic diagram of the Wen Sheng and distance of high-order conductor A phases in the case of charged current；
Figure 10 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in it is different negative
The relation schematic diagram of the Wen Sheng and distance of low level conductor B phases in the case of charged current；
Figure 11 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in it is different negative
The relation schematic diagram of the Wen Sheng and distance of shell in the case of charged current when high-order conductor A phase faults；
Figure 12 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in it is different negative
The relation schematic diagram of the Wen Sheng and distance of shell in the case of charged current when low level conductor B phase faults；
Figure 13 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in it is different negative
The temperature of high-order conductor A phases and low level conductor B phases rises poor ratio relation schematic diagram in the case of charged current；
Figure 14 is a kind of flow of the infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention
Figure；
Figure 15 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in related knot
The schematic diagram of structure section；
Figure 16 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in shell it is burnt
The position view of point；
Figure 17 be a kind of GIS device over-heat inside defect provided in an embodiment of the present invention infrared detection method in temperature mountain
Peak schematic diagram.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment shall fall within the protection scope of the present invention.
Need to acquire the Wen Shengyu shells of conductor in the GIS device in advance before carrying out status assessment to GIS device
Wen Sheng between proportionate relationship, you can the temperature between the conductor and the shell is obtained according to the proportionate relationship and rises poor ratio
Value.When the GIS device is started to work, the temperature of the shell of the GIS device can be acquired in real time by infrared detection equipment
Degree need not directly be measured so as to rise Wen Sheng of the difference than being worth to the conductor according to the temperature by external equipment
The Wen Sheng of conductor in the GIS device will not destroy the structure of GIS device, while can accurately measure the Wen Sheng of the conductor.
Wherein, the solution procedure of the poor ratio of temperature liter can be found in Fig. 1, and Fig. 1 is inside a kind of GIS device provided in an embodiment of the present invention
The infrared detection method medium temperature of overheating defect rises the flow chart of the solution procedure of poor ratio；Including：
S11, the temperature that shell is simulated in GIS analog machines is acquired in real time by infrared detection equipment, it is described to obtain
Simulate the Wen Sheng of shell；
Wherein, the GIS analog machines are used to simulate the over-heat inside defect of the GIS device；
S12, the temperature for acquiring simulation conductor in the GIS analog machines in real time by heat-sensitive sensor, to obtain
State the Wen Sheng of simulation conductor；
S13, according to it is described simulation shell Wen Shengyu described in simulation conductor Wen Sheng obtain the simulation shell with it is described
Temperature between simulation conductor rises poor ratio.
Wherein, the GIS analog machines include at least one defects simulation equipment, and the defects simulation equipment is used for itself
It generates heat so that over-heat inside defect occurs for the GIS analog machines, the defects simulation equipment is set in the simulation conductor.Institute
It includes high position conductor A phases, high-order conductor C phases and low level conductor B phases to state simulation conductor；Wherein, the defects simulation equipment is set to
In the high position conductor A phases or the low level conductor B phases.
Wherein, the temperature for acquiring simulation shell in GIS analog machines in real time by infrared detection equipment specifically includes：
In the simulation upper part of the housing of GIS analog machines setting infrared detection region, acquired by infrared detection equipment described infrared
Temperature of the maximum temperature as the simulation shell in detection zone.
Specifically, in step s 11, referring to Fig. 2, the GIS analog machines can be the analog machine of 252kV, described
GIS analog machines use three-phase combined type structure, and the length of entire cavity is 8.7m, in the simulation shell of the GIS analog machines
Filled with sulfur hexafluoride gas, the GIS analog machines are divided into fault simulation section 11, middle transition section 12 and normal analog section
13, wherein the fault simulation section 11 is used for simulated interior overheating defect, and the normal analog section 13 can be used for and failure mould
Quasi- section 11 compares, and the middle transition section 12 is for eliminating the fault simulation section 11 due to hot-spot to the normal mode
The heat transfer of quasi- section 13 influences, because heat transfer is that exponentially is decayed, reduces with the increase of distance.
Wherein, the fever of GIS device is caused by it is usually because contact is bad, and contact resistance becomes larger at this time, in order to
This fever is simulated, is provided with the defects simulation equipment of I-shaped, the defects simulation equipment 100 is in the high-order conductor A
Placement location in phase is as shown in figure 3, the placement location such as Fig. 4 of the defects simulation equipment 100 in the low level conductor B phases
It is shown.
Preferably, the structural schematic diagram of the defects simulation equipment includes referring to Fig. 5 and Fig. 6, the defects simulation equipment
First plectane 1, the second plectane 3 and guide rod 2；Wherein, the both ends of the guide rod 2 are separately connected first plectane 1 and described
Two plectanes 3, the cross-sectional area of first plectane 1 are less than the cross-sectional area of second plectane 3.Specifically, first circle
Plate 1, the guide rod 2 and second plectane 3 are cylinder, a diameter of 90mm of first plectane 1, second plectane
3 a diameter of 140mm.Through-hole there are four being all provided on first plectane 1 and second plectane 3, the effect of through-hole is to be used for
It wears and is bolted plectane and conductor, each through-hole is in circular hole, and in other embodiments, the shape of the through-hole can also be
Square or arbitrary shape, all within the scope of the present invention.A diameter of 30mm of the guide rod 2, length 20mm, it is described
Guide rod 2 can be reduced the through-current capability of the guide rod 2, be made using the larger material Q235 (common carbon structural steel) of resistivity
The guide rod 2 generates hot-spot in the case that through-flow, so as to simulated interior overheating defect phenomenon.
Convection current and diffusion of the heat by the sulfur hexafluoride gas inside the GIS analog machines, will be described
The temperature of simulation conductor is transmitted on the simulation shell, at this time because the density of the sulfur hexafluoride gas is larger, described
The top of GIS analog machines can have the less sulfur hexafluoride gas, be not enough so as to cause convection current, and then described
Heat has been saved bit by bit on the top of GIS analog machines more, and high-temperature area is located at the top of the simulation shell.Passing through infrared inspection
When measurement equipment acquires the temperature of the simulation shell, at least three infrared detection regions are set on the top of the simulation shell
10, it can refer to Fig. 7, wherein the infrared detection region 10 is respectively arranged on the fault simulation section 11, the middle transition section 12
And the normal analog section 13, the maximum temperature in each infrared detection region 10 is acquired by the infrared detection equipment
Spend the temperature as the simulation shell.Preferably, can also the fault simulation section 11, the middle transition section 12 and
Multiple infrared detection regions 10 are respectively set in the normal analog section 13, all within the scope of the present invention.
Preferably, the thermal infrared imager that model GL800 may be used is detected the simulation case temperature, described
The heat sensitivity of thermal infrared imager is 0.015K, and warm wide scope can be adjusted to 0.1K, and resolution ratio is 800 × 600 pixels.It is described red
Outer thermal imaging system releases infra-red radiation to the simulation shell, and infra-red radiation is focused on by the optical mirror slip of the thermal infrared imager
Detector is converted by signal amplification and A/D (analog-digital converter), causes the variation of voltage or resistance, voltage or resistance
Variation is read by the electronic component in thermal imaging system in the thermal infrared imager.The signal that the thermal infrared imager generates will turn
It changes electronic image (thermogram) into and is shown on the screen of the thermal infrared imager.Thermogram is by electronics
The target image being displayed on the screen after reason, in thermogram, on the surface of different tones and the simulation shell
Infrared radiation distribution is corresponding.
In the process, the thermal infrared imager can be checked and the radiation energy that sends out on the surface of the simulation shell
Corresponding thermogram.Preferably, the temperature Cheng Han of the infrared energy of the simulation shell and the simulation shell
Number relationship, can refer to formula (1)：
W=ε δ AT4Formula (1)
Wherein, W is the transmission power of the simulation shell, and ε is the radiance of the simulation shell, and 0.9 is taken in this programme；δ is
Boltzmann constant；A is the surface area of the simulation shell；T is the absolute temperature of the simulation shell.
Specifically, in step s 12, the temperature of the simulation conductor can be obtained by heat-sensitive sensor, the temperature-sensitive
Sensor is set in the high-order conductor A phases or the low level conductor B phases, for acquiring the high-order conductor A phases or institute in real time
State the temperature of low level conductor B phases, specific heat-sensitive sensor to bury a schematic diagram as shown in Figure 8.Preferably, when the Defect Modes
When proposing for the high-order conductor A phases are set to, three heat-sensitive sensors can be placed in the high-order conductor A phases, and described
Heat-sensitive sensor is respectively arranged in the fault simulation section 11, the middle transition section 12 and the normal analog section 13；Work as institute
When stating defects simulation equipment set on the low level conductor B phases, three heat-sensitive sensors can be placed in the low level conductor B phases
Device, and the heat-sensitive sensor is respectively arranged on the fault simulation section 11, the middle transition section 12 and the normal analog section
In 13.Preferably, referring to Fig. 8,16 heat-sensitive sensors can also be placed in the high-order conductor A phases, a~p in Fig. 7 is equal
Indicate heat-sensitive sensor, wherein the temperature that placed near the defects simulation equipment is main focus area, therefore described
Heat-sensitive sensor to bury dot density larger.Similarly, 16 heat-sensitive sensors can also be placed in the low level conductor B phases, such as
Shown in Fig. 8.The temperature for acquiring each heat-sensitive sensor in real time, so as to obtain high-order conductor A phases or described low
The temperature of position conductor B phases.
Specifically, in step s 13, obtaining the temperature of each heat-sensitive sensor, while obtaining the infrared detection
The temperature for the simulation shell that equipment detects can be set different described when the GIS analog machines are started to work
The simulation load current of GIS analog machines, for example the simulation load current is respectively 2000A, 1500A and 1000A.
When the GIS analog machines are started to work, the simulation is acquired by the heat-sensitive sensor every 30 minutes
The temperature of conductor, to obtain the Wen Sheng of the simulation conductor, wherein the temperature is upgraded to the simulation conductor (or the simulation
Shell) temperature and environment temperature difference.When the Wen Sheng at the same position of the simulation conductor when 1 is small it is interior be less than 0.5K when,
Wen Sheng reaches stable.
When the defects simulation equipment is set in the high-order conductor A phases, after Wen Sheng reaches stable, the high position conductor
Temperature in A phases at different location rises as shown in figure 9,0 point of distance is the placement location of the defects simulation equipment, as institute in figure
The fault point of high-order conductor A phases is stated, when the high position conductor A phase over-heat inside defects, in 2000A, 1500A and 1000A electric current
It is respectively 70.3K, 51.8K and 26.3K that the corresponding temperature in lower fault point, which rises,；
When the defects simulation equipment is set in the low level conductor B phases, after Wen Sheng reaches stable, the low level conductor
Temperature in B phases at different location rises as shown in Figure 10, placement location of 0 point of the distance for the defects simulation equipment in figure, as
The fault point of the low level conductor B phases, when the low level conductor B phase over-heat inside defects, in 2000A, 1500A and 1000A electricity
It is respectively 62.08K, 39.41K and 23.6K to flow down the corresponding temperature in fault point and rise.
According to Fig. 9 and Figure 10 it is found that the corresponding Wen Sheng in fault point of the low level conductor B phases high-order conductor A phases
The corresponding temperature in fault point rise it is low, this is because cavity of the fault point of the low level conductor B phases close to the GIS analog machines
Lower part, the sulfur hexafluoride gas for participating in thermal convection current is more, and convection current is more abundant, to take away heat more.In difference
Load current conditions under, the high position conductor A phases and the Wen Sheng of the low level conductor B phases show identical variation with distance
Trend, Wen Sheng are reduced from fault point to both sides, and the temperature close to fault point rises rate of descent higher than distal end.This is because the mould
The temperature of quasi- conductor, which rises, mainly to be determined by simulation conductor self-heating and heat transfer, and the self-heating of the simulation conductor rises and dominates
Effect.Since the conduction efficiency of the simulation conductor is low, Wen Sheng declines rapidly from fault point to both sides.When far from fault point
When, for example in normal analog section, temperature, which rises, to be declined slowly, this is because it is almost simulation conductor self-heating that temperature herein, which rises,
Heat transfer influences smaller.
When the GIS analog machines are started to work, the high position conductor A phase faults when institute under different load current conditions
The Wen Sheng for stating simulation shell is as shown in figure 11 with the variation tendency of distance, the fault point pair under 2000A, 1500A and 1000A electric current
It is respectively 6.19K, 4.71K and 2.23K that the shell temperature answered, which rises,.Under different load current conditions when the low level conductor B phase faults
The Wen Sheng of the simulation shell is as shown in figure 12 with the variation tendency of distance, the fault point under 2000A, 1500A and 1000A electric current
It is respectively 4.50K, 3.12K and 1.70K that corresponding simulation shell temperature, which rises,.According to Figure 11 and Figure 12 it is found that the low level conductor B phases
The corresponding Wen Sheng in the fault point high-order conductor A phases fault point low, the Wen Sheng with above-mentioned simulation conductor of corresponding temperature liter
Situation is identical, and the Wen Sheng of the simulation shell mostlys come from the convection current heat transfer of sulfur hexafluoride gas in the GIS analog machines,
The trend continuously decreased is showed with distance.
The case where being risen by the temperature to simulation conductor described in the GIS analog machines and the simulation shell is divided
It is close to find that the poor temperature with the simulation shell of radial corresponding points of temperature liter of simulation conductor described in fault point rises poor ratio for analysis
It is seemingly fixed value, wherein the calculating process that the temperature rises poor ratio can be found in formula (2)：
Wherein, S is that the temperature rises poor ratio, and Ta1 is that the simulation conductor Wen Sheng, Ta2 of the fault point are that the simulation is led
Wen Sheng under body normal operation, Tb1 are that simulation the shell Wen Sheng, Tb2 of the fault point are that the simulation shell is normally transported
Wen Sheng in the case of row.The simulation conductor temperature that the fault point can be collected according to the heat-sensitive sensor (acquires at this time
Close to the temperature of the heat-sensitive sensor of the defects simulation equipment), then subtract environment temperature and can be obtained the fault point
Simulation conductor temperature rise Ta1；The temperature under the simulation conductor normal operation can be collected according to the heat-sensitive sensor
Degree (temperature for acquiring the heat-sensitive sensor close to the normal analog section at this time), then subtract environment temperature and can be obtained institute
The temperature stated under simulation conductor normal operation rises Ta2；The fault point can be collected according to the infrared detection equipment
Case temperature (temperature of the infrared detection equipment detection close to the region of the defects simulation equipment at this time) is simulated, then
Subtract the simulation shell temperature liter Tb1 that environment temperature can be obtained the fault point；It can be acquired according to the infrared detection equipment
To the temperature (described in infrared detection equipment detection at this time of the simulation shell in the GIS analog machines normal operation
The temperature of normal analog section), then subtract environment temperature and can be obtained the Wen Sheng simulated under shell normal operation
Tb2。
The temperature that the high-order conductor A phases and the low level conductor B phases can be obtained according to formula (2) rises poor ratio relation,
As shown in figure 13, for the high-order conductor A phases when it is 2000A, 1500A, 1000A to simulate load current, the temperature rises poor ratio
Respectively 8.83,9.00,9.79, the low level conductor B phases are described when it is 2000A, 1500A, 1000A to simulate load current
It is respectively 10.30,10.01,10.53 that temperature, which rises poor ratio,.Thus, the temperature rises poor ratio by size of current and fault point
Position influence is smaller, and it is 10 that the temperature can be risen to poor ratio value in the present invention.
Preferably, after acquiring the temperature and rising poor ratio, poor ratio can be risen according to the temperature, scene is carried out to GIS device
Detection, at the scene detect during, can not by the GIS device be arranged heat-sensitive sensor can be in the hope of described
The temperature of conductor, so as to determine whether the GIS device occurs over-heat inside defect, specific detection process can refer to figure
14, Figure 14 be a kind of flow chart of the infrared detection method of GIS device over-heat inside defect provided in an embodiment of the present invention；Packet
It includes：
S1, acquired in real time by infrared detection equipment GIS device shell temperature；
S2, temperature mountain peak found by infrared detection equipment on the housing in preset time, it is described to obtain
The abnormal temperature difference of shell；
S3, poor ratio, the conductor are risen according to the temperature between the shell acquired in advance and the conductor of the GIS device
Positive room temperature rises and the abnormal temperature difference of the shell obtains the overheating of the conductor；
Wherein, the positive room temperature of the conductor be upgraded to the temperature of the conductor under the GIS device normal operating condition with
The difference of environment temperature；Wherein, the temperature of the conductor flows through under the GIS device normal operating condition according to the conductor
Load current obtain；Wherein, the load current includes inlet-outlet line load current and bus load electric current.
S4, status assessment is carried out to the GIS device according to the overheating of the conductor.
Preferably, the abnormal temperature difference of the shell include the alternate temperature difference in temperature mountain peak, the temperature mountain peak main bus-bar temperature difference and
The temperature mountain peak dependency structure section temperature difference；Wherein,
The alternate temperature difference in the temperature mountain peak refers to working as institute when the GIS device is the GIS device of three-phase separate case structure
The focus area of a certain phase in GIS device is stated there are when temperature mountain peak, the vertex on the temperature mountain peak is identical as other two-phases
Location point temperature difference maximum value；
The temperature mountain peak main bus-bar temperature difference refers to when it includes the GIS device of two busbares that the GIS device, which is, when one
Busbar is there are when temperature mountain peak, the maximum value of the temperature difference of the vertex on temperature mountain peak location point identical with another busbar；
The temperature mountain peak dependency structure section temperature difference refer to when GIS device be Threephase common-box structure GIS device when, when
The focus area of a certain phase in the GIS device is there are when temperature mountain peak, the vertex on the temperature mountain peak and other related knots
The maximum value of the temperature difference of the identical location point of structure section.Wherein, the dependency structure section refers in the GIS device, with institute
It is boundary to state focus area, and the GIS device is divided into GIS sections multiple, GIS sections of internal junctions having the same of many of which
Structure and identical temperature transmission characteristic, and in normal operation, when by identical load current, the shell of the GIS device
Temperature distributing characteristic having the same is referred to as dependency structure section by GIS sections with the above characteristics, Figure 15 is can refer to, in A phases
The region of middle vertex A1, A2, A3, A4 composition, the region that B1, B2, B3, B4 are formed in B phases, C1, C2, C3, C4 group in C phases
At region, dependency structure section each other.Preferably, the focus area includes the focus area containing temperature mountain peak and do not contain
The focus area on temperature mountain peak.
Specifically, referring to Figure 16, the focus area is the focus area of the shell of the GIS device, as GIS device
Case surface project to the housing surface area on shell reference area.
Specifically, the shell reference area is by shell focus centered on the subpoint in reference plane, with described outer
The square area that a diameter of length of side of shell is drawn in reference plane.The shell focus is case surface, conductor contacting section
With the crosspoint of shell focus face；In general, in the GIS device, there are two shell focuses for each conductor contacting section, relatively
For the people of observation, the point before shell is referred to as front focus, the focus after the subsequent point of shell is referred to as.
Specifically, the conductor contacting section was the radial section of the centrical GIS device of conductor contact site.Institute
The central axes that shell focus face was the GIS device are stated, and perpendicular to the face of reference plane.
Specifically, the reference plane is in GIS substation fields, for the shell of horizontally disposed GIS device, institute is crossed
Shell central axes are stated, and perpendicular to the face of horizontal plane, is referred to as to be arranged horizontally the reference plane of GIS shells；For arranging GIS vertically
The shell of equipment, face on the basis of the reference plane for the horizontally disposed GIS shells for taking its adjacent.
Specifically, reference direction shown in figure is perpendicular to the direction of reference plane.Shell datum mark shown in figure is
The crosspoint of case surface, conductor contacting section and reference plane.What contact center shown in figure connected between conductor
The contact position of contact, wherein the schematic diagram of contact can refer to the simple schematic diagram of the contact in figure.
Specifically, in step sl, it is also necessary to acquire ambient humidity, the ambient humidity can be used for correcting described infrared
The error of detection device.The emissivity of the infrared detection equipment is 0.90~0.95, the shooting area of the infrared detection equipment
Domain is more than the diameter of the shell of the GIS device, and the shooting distance of the infrared detection equipment is 3~5 meters, the infrared detection
The shooting elevation angle, the shooting angle of depression and the shooting oblique angle of equipment are 0~30 °.Preferably, the shooting elevation angle is the infrared inspection
When measurement equipment is from lower to some shell focus of photographs, optical center point and the shell focus of the infrared detection equipment
Between projection line of the line on conductor contacting section and horizontal plane at angle.The shooting angle of depression is the infrared detection
When equipment shoots downwards some shell focus from eminence, the optical center point of the infrared detection equipment and the shell focus it
Between projection line of the line on conductor contacting section and horizontal plane at angle.The shooting oblique angle is that the infrared detection is set
When standby some shell focus of shooting, the line between the optical center point and the shell focus of the infrared detection equipment is in water
The projection line of plane and conductor contacting section at angle.
Preferably, when detecting the temperature of the GIS device middle casing using the infrared detection equipment, for ease of realizing
To the Precision measurement of shell Temperature Distribution, shooting area should be small as far as possible, and general there are two types of styles of shooting, including generally survey
It measures and accurately measures.For the GIS device of three-phase separate box formula, general measure should be carried out first, the general measure is i.e. to institute
The GIS device for stating three-phase separate box formula carries out whole scan；And when the shooting area of the infrared detection equipment is difficult to cover three
It when phase range structure, needs to take single-phase separated shooting, when the temperature difference at same position is more than 1K, can be accurately measured again,
The GIS device accurately measured i.e. to the three-phase separate box formula carries out partial sweep (i.e. part shooting), and measurement result is more
Accurately.Should general measure, the temperature difference of such as two busbares be more than first there are when two double-bus to the GIS device of three-phase combined type
When 1K, it can be accurately measured again.
Specifically, in step s 2, the infrared detection equipment can be passed through after the GIS device runs a period of time
Acquire the temperature mountain peak of the shell.With reference to figure 17, there are thermoisopleth, temperature mountains in the shooting area of the infrared detection equipment
Peak, temperature mountain peak vertex, shell focus and atlas analysis region.When the infrared detection equipment is adopted in the shooting area
When collecting temperature mountain peak, vertex Max corresponding temperature in the temperature mountain peak is then the highest that the infrared detection equipment detects
Temperature, the corresponding temperature of Min is then minimum temperature in figure.
At this point, in step s3, when the GIS device is the GIS device of three-phase separate case structure, when the GIS is set
The focus area of a certain phase in standby obtains identical in other two-phases with the vertex on the temperature mountain peak there are when temperature mountain peak
The temperature of location point, it with the temperature difference in the identical location point of other two-phases is then the shell to take the vertex on the temperature mountain peak
The abnormal temperature difference (i.e. the alternate temperature difference in temperature mountain peak).The abnormal temperature difference of the shell is the simulation of fault point described in formula (2)
Shell temperature rises the difference that Tb1 rises Tb2 with the temperature under the simulation shell normal operation, i.e., denominator in the described formula (2).This
When, according to the positive room temperature liter of the conductor, i.e. Ta2 in formula (2) and the temperature rise difference ratio S and can obtain described lead
Ta1 in the overheating of body, i.e. formula (2).In addition, the temperature mountain peak main bus-bar temperature difference, the temperature mountain peak correlation knot
The structure section temperature difference asks method to refer to the above process, and details are not described herein.
Preferably, the atlas analysis region is when there are temperature mountain peak, and with temperature maximum point, (i.e. temperature mountain peak is pushed up
Point) centered on, the length of side of the focus area of a quarter is the square area of the length of side.
Specifically, when being shot using the infrared detection equipment, the surface three dimension temperature of the shell of the GIS device
Degree distribution, is represented by three dimensional temperature distribution function：
Tg=G (x, y, z) formula (3)；
Wherein, the three dimensional temperature distribution function be the GIS device case surface each point using shell focus as origin, GIS
The central axial of equipment is x-axis, and vertical direction is the stereoscopic three-dimensional coordinate value of z-axis, and y-axis is vertical with x-axis and in same level
On, unit is millimeter.The surface three dimension Temperature Distribution of GIS shells is projected to the infrared detection equipment in shooting direction and is formed
Temperature Distribution on plane collection of illustrative plates, the Temperature Distribution on the plane collection of illustrative plates are referred to as collection of illustrative plates Temperature Distribution.
Specifically, atlas analysis region shown in the figure is when being shot using the infrared detection equipment, it is right on collection of illustrative plates
The range of the focus area for the GIS shells answered is referred to as collection of illustrative plates focus area.Specifically, the figure in the collection of illustrative plates focus area
Composing temperature profile function is：
Tp=P (u, v) formula (4)；
Wherein, the collection of illustrative plates temperature profile function is the shell focus that is identified using the infrared detection equipment as origin, level side
To for u axis, vertical direction is the planar two dimensional coordinate value of v axis, and unit is pixel.There are poles for the collection of illustrative plates temperature profile function
The difference of big value and minimum, maximum and minimum is more than 0.5K, 10 temperature steps is divided between maximum and minimum, i.e.,
Each step at least 0.05K, each step temperature identical point is linked up to form 10 thermoisopleths, when at least 5 thermoisopleths
It is when being closed, you can think that there are temperature mountain peaks for the collection of illustrative plates focus area.The maximum point of temperature claims in the region of temperature mountain peak
Be temperature mountain peak vertex.
Specifically, in step s 4, status assessment, root are carried out to the GIS device according to the overheating of the conductor
Situation is risen according to the temperature of the conductor, the severity of the GIS device over-heat inside defect has been subjected to state demarcation, it is specific to wrap
It includes：
When the overheating of the conductor is more than positive room temperature liter and is risen less than standard temperature, judge that the GIS device is in
Special state；
When the overheating of the conductor is more than standard temperature liter and is risen less than limit value temperature, judge that the GIS device is in
Abnormality；
When the overheating of the conductor, which is more than limit value temperature, to be risen, judge that the GIS device is in major defect state.
Specifically, being advised according to GB/T11022 (common specifications for high-voltage switchgear and controlgear standards) specification
Fixed, it is 75K that GIS device inner conductor, which allows temperature to rise maximum value,.Therefore, the limit value Wen Shengke is with for 75K, the standard Wen Sheng
50K is can be set as, the positive room temperature liter can be set as 10K.In other embodiments, the standard Wen Sheng and described normal
The value of Wen Sheng can be according to the operating condition of the CIS equipment come any given, all within the scope of the present invention.Work as Wen Sheng
When more than 10K and less than 50K, equipment should arouse attention, and reinforce tracking；When Wen Sheng is more than 50K and is less than 75K, equipment exists
It is abnormal, operating load should be controlled, tracking is reinforced；When Wen Sheng is more than 75K, equipment should arrange to disintegrate as early as possible there are major defect
It checks.In practical applications, the present invention need not disintegrate GIS device, Accurate Diagnosis can go out in the case where GIS device is charged
The severity for assessing defect inside GIS device simultaneously with the presence or absence of overheating defect, more particularly to find GIS device over-heat inside
Starting stage and observe its development trend.
Compared with prior art, the infrared detection side of a kind of GIS device over-heat inside defect disclosed by the embodiments of the present invention
Method acquires the temperature of the shell of GIS device by the infrared detection equipment in real time, obtains the abnormal temperature difference of the shell, to
Overheating of the difference than being worth to the conductor is risen according to the temperature between the shell by acquiring in advance and the conductor, in turn
Status assessment is carried out to the GIS device according to the overheating of the conductor.It solves and measures in GIS device in the prior art
Error larger problem when portion's overheating defect can accurately measure GIS device and whether there is over-heat inside defect, while assess
The severity of over-heat inside defect.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (10)
1. a kind of infrared detection method of GIS device over-heat inside defect, which is characterized in that including：
Acquire the temperature of the shell of GIS device in real time by infrared detection equipment；
Temperature mountain peak is found by infrared detection equipment on the housing in preset time, to obtain the different of the shell
Room temperature is poor；
The positive room temperature of poor ratio, the conductor is risen according to the temperature between the shell and the conductor of the GIS device acquired in advance
It rises and the abnormal temperature difference of the shell obtains the overheating of the conductor；Wherein, the positive room temperature of the conductor is upgraded to described
The difference of the temperature and environment temperature of the conductor under GIS device normal operating condition；
Status assessment is carried out to the GIS device according to the overheating of the conductor.
2. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
The abnormal temperature difference of shell includes the alternate temperature difference in temperature mountain peak, the temperature mountain peak main bus-bar temperature difference and temperature mountain peak dependency structure Duan Wen
Difference；Wherein,
The alternate temperature difference in the temperature mountain peak refers to when the GIS device is the GIS device of three-phase separate case structure, when described
For the focus area of a certain phase in GIS device there are when temperature mountain peak, the vertex on the temperature mountain peak is identical with other two-phases
The maximum value of the temperature difference of location point；
The temperature mountain peak main bus-bar temperature difference refers to when it includes the GIS device of two busbares that the GIS device, which is, as a mother
Line is there are when temperature mountain peak, the maximum value of the temperature difference of the vertex on temperature mountain peak location point identical with another busbar；
The temperature mountain peak dependency structure section temperature difference refers to when GIS device is the GIS device of Threephase common-box structure, when described
The focus area of a certain phase in GIS device is there are when temperature mountain peak, the vertex on the temperature mountain peak and other dependency structure sections
The maximum value of the temperature difference of identical location point.
3. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
The load current that the temperature of conductor flows through under the GIS device normal operating condition according to the conductor obtains.
4. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
The solution procedure that temperature rises poor ratio specifically includes：
The temperature that shell is simulated in GIS analog machines is acquired in real time by infrared detection equipment, to obtain the simulation shell
Wen Sheng；Wherein, the GIS analog machines are used to simulate the over-heat inside defect of the GIS device；
The temperature for acquiring simulation conductor in the GIS analog machines in real time by heat-sensitive sensor is led to obtain the simulation
The Wen Sheng of body；
The simulation shell and the simulation conductor are obtained according to the Wen Sheng of simulation conductor described in the Wen Shengyu of the simulation shell
Between temperature rise poor ratio.
5. a kind of infrared detection method of GIS device over-heat inside defect as claimed in claim 4, which is characterized in that described
GIS analog machines include at least one defects simulation equipment, and the defects simulation equipment is for self-heating so that the GIS moulds
Preparation life over-heat inside defect is proposed, the defects simulation equipment is set in the simulation conductor.
6. a kind of infrared detection method of GIS device over-heat inside defect as claimed in claim 5, which is characterized in that described
Simulation conductor includes high position conductor A phases, high-order conductor C phases and low level conductor B phases；Wherein, the defects simulation equipment is set to institute
It states in high-order conductor A phases or the low level conductor B phases.
7. a kind of infrared detection method of GIS device over-heat inside defect as claimed in claim 5, which is characterized in that described
Defects simulation equipment includes the first plectane, the second plectane and guide rod, wherein
The both ends of the guide rod are separately connected first plectane and second plectane, and the cross-sectional area of first plectane is small
In the cross-sectional area of second plectane.
8. a kind of infrared detection method of GIS device over-heat inside defect as claimed in claim 4, which is characterized in that described
The temperature for acquiring simulation shell in GIS analog machines in real time by infrared detection equipment specifically includes：
In the simulation upper part of the housing of GIS analog machines setting infrared detection region, acquired by infrared detection equipment described infrared
Temperature of the maximum temperature as the simulation shell in detection zone.
9. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
The emissivity of infrared detection equipment is 0.90~0.95, and the shooting area of the infrared detection equipment is more than the GIS device
The shooting distance of the diameter of shell, the infrared detection equipment is 3~5 meters, the shooting elevation angle of the infrared detection equipment, shooting
The angle of depression and shooting oblique angle are 0~30 °.
10. a kind of infrared detection method of GIS device over-heat inside defect as described in claim 1, which is characterized in that described
Status assessment is carried out according to the overheating of the conductor to the GIS device to specifically include：
When the overheating of the conductor is more than positive room temperature liter and is risen less than standard temperature, judge that the GIS device is in special
State；
When the overheating of the conductor is more than standard temperature liter and is risen less than limit value temperature, judge that the GIS device is in abnormal
State；
When the overheating of the conductor, which is more than limit value temperature, to be risen, judge that the GIS device is in major defect state.
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| CN112816789A (en) * | 2021-01-29 | 2021-05-18 | 深圳博创汇能科技有限公司 | Conductor internal resistance abnormity identification method, device, equipment and computer storage medium |
| CN113466291A (en) * | 2021-06-24 | 2021-10-01 | 华能秦煤瑞金发电有限责任公司 | Analysis method for detecting large-volume concrete cracks based on temperature field change |
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