CN108511522A - The enhanced HEMT device of p-GaN bases - Google Patents
The enhanced HEMT device of p-GaN bases Download PDFInfo
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- 230000004888 barrier function Effects 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000007704 transition Effects 0.000 claims abstract description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 33
- 229910052738 indium Inorganic materials 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 229910017083 AlN Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000013461 design Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
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- Junction Field-Effect Transistors (AREA)
Abstract
The present invention relates to a kind of enhanced HEMT devices of p GaN bases, including：Substrate；Transition zone over the substrate；Channel layer on the transition zone；Barrier layer on the channel layer；P GaN layers on the barrier layer；And source electrode, drain electrode, grid and dielectric layer on the barrier layer and the p GaN layers；The barrier layer includes barrier layer A and barrier layer B, the barrier layer A and the barrier layer B alternately laminated；The energy gap of the barrier layer A is more than the energy gap of the barrier layer B.In the case where barrier layer is thicker, the threshold voltage of larger positive value is obtained, improves the working efficiency of HEMT device.
Description
Technical field
The present invention relates to semiconductor applications, more particularly to the enhanced HEMT device of p-GaN bases.
Background technology
With the development of high-voltage switch gear and high-speed radio-frequency circuit, GaN high electron mobility transistor (GaN HEMT) at
For the emphasis of the area research, conventional GaN HEMT devices are depletion type, and threshold voltage ＜ 0V are needed using negative unlatching
Voltage.When radio frequency and microwave chip design, the Power Management Design of minus gate voltage increases design cost；The threshold value of enhanced HEMT
Voltage is positive value, only needs a positive bias that can make its work or pinch off in practical application.Back bias voltage can be eliminated in this way
Circuit design, simplify circuit, reduce the complexity of circuit design and the cost of preparation.To extensive microwave radio circuit
For, meaning is very great.For power switch circuit, enhanced HEMT device ensures when driving circuit fails,
HEMT device is off state, to provide fail safe to power switching system.
Currently, generally use etches the countermeasures such as recessed grid, F base ion implantings to exhaust the two dimension electricity of grid lower channels
Sub- gas (2DEG), to realize enhancement device.But recessed gate etching process is difficult to accurately control, while being also easy to bring damage, meeting
Cause current collapse phenomenon, deteriorates the reliability of device, while threshold voltage is not also high；F base ion implantings also bring along a system
Row stability problem.Either recessed grid etching or F bases ion implanting can all cause to damage to material, although can by annealing
Certain damage is eliminated, but remaining damage can still adversely affect the stability and reliability of device, and
The repeatability of technique is not also high.
Therefore, in existing scheme, a kind of more universal method for realizing the enhanced HEMT of P-GaN bases is to set barrier layer
Meter is thinner, while P-GaN layers are inserted between gate metal and barrier layer.By this design, generally when barrier layer thickness arrives
When up to 12nm-15nm, threshold voltage is about 2V or so, and still, such design can cause the Mg atoms in P-GaN to be easy diffusion
Into channel layer, and then the conducting resistance of device is made to increase, influences the working efficiency of HEMT device.
And in the enhanced HEMT device of p-GaN bases, in order to effectively reduce the Mg atoms permeatings in p-GaN to channel layer
Quantity, the means of generally use are that barrier layer thickens, and still, barrier layer thickens, and the value of threshold voltage can be brought to negative sense
It is mobile, to make threshold voltage become smaller, or even become negative.
Invention content
Based on this, the present invention provides a kind of enhanced HEMT devices, and while increasing barrier layer thickness, holding is larger just
The threshold voltage of value.
A kind of enhanced HEMT device of p-GaN bases, including：
Substrate；
Transition zone over the substrate；
Channel layer on the transition zone；
Barrier layer on the channel layer；
P-GaN layer on the barrier layer；And
Source electrode, drain electrode, grid on the barrier layer and the p-GaN layer and dielectric layer；
The barrier layer includes barrier layer A and barrier layer B, the barrier layer A and the barrier layer B alternately laminated；
The energy gap of the barrier layer A is more than the energy gap of the barrier layer B.
The barrier layer A is AlInGaN in one of the embodiments, and wherein the content of Al is 0%-100%, In's
Content is 0%-100%, and the content of Ga is 0%-100%；The content summation of described Al, In and Ga are 100%；
The barrier layer B is AlInGaN, wherein the content of Al is 0%-100%, and the content of In is 0%-100%, Ga
Content be 0%-100%；The content summation of described Al, In and Ga are 100%.
The barrier layer A is AlInGaN in one of the embodiments, wherein the content of Al is 0%-50%, In's
Content is 0%-50%, and the content of Ga is 0%-100%；The content summation of described Al, In and Ga are 100%；
The barrier layer B is AlInGaN, wherein the content of Al is 0%-50%, and the content of In is 0%-50%, Ga's
Content is 0%-100%；The content summation of described Al, In and Ga are 100%.
The barrier layer thickness is 10nm-50nm in one of the embodiments,.
The thickness of the barrier layer A is 0.5nm-10nm in one of the embodiments,；Quantity is more than 2.
The thickness of the barrier layer B is 0.5nm-10nm in one of the embodiments,；Quantity is more than 2.
In one of the embodiments, the substrate material be selected from silicon, silicon carbide, sapphire, GaN and AlN one kind or
It is several.
The material of the transition zone is selected from one kind or several of AlN, GaN, AlGaN and InGaN in one of the embodiments,
Kind.
The material of the channel layer is one kind or several selected from GaN, AlGaN and InGaN in one of the embodiments,
Kind.
Compared with existing scheme, the invention has the advantages that：
In the enhanced HEMT device of p-GaN bases of the present invention, barrier layer is designed to that barrier layer A and barrier layer B are alternately laminated
Superlattice structure, be equivalent in the larger barrier layer A of energy gap and insert the smaller barrier layer B of multilayer energy gap,
On the one hand, the thickness for increasing barrier layer effectively reduces Mg atoms permeatings to the quantity of channel layer, improves HEMT device
Working efficiency；On the other hand, influences of the barrier layer B of smaller energy gap to threshold voltage is smaller, is conducive to obtain positive value
The thickness of threshold voltage, barrier layer of the present invention is about 10nm-50nm, and threshold voltage is about 0.2V-3V.
The principle of the present invention is as follows：
The present invention makes the energy gap of barrier layer A, B by adjusting the constituent content of Al, In, Ga in barrier layer A, B material
It is different.Wherein the larger material of energy gap has stronger polarization, thus its thickness is affected to threshold voltage.Forbidden band is wide
The smaller material of degree has weaker polarization, thus its thickness is smaller on threshold voltage influence.It is smaller by being inserted into energy gap
Material, the thickness of barrier layer can be increased, significant impact is caused without to threshold voltage.
Description of the drawings
Fig. 1 is the structural schematic diagram of the enhanced HEMT devices of P-GaN of the embodiment of the present invention 1.
Specific implementation mode
It to facilitate the understanding of the present invention, below will be to invention is more fully described.The present invention can be with many not
With form realize, however it is not limited to embodiment described herein.Make to this on the contrary, purpose of providing these embodiments is
Disclosure of the invention content understanding is more thorough and comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the Listed Items of pass.
An embodiment of the invention provides a kind of enhanced HEMT devices of P-GaN, structure as shown in Figure 1,
Including substrate 0121, the material of the substrate is selected from the one or more of silicon, silicon carbide, sapphire, GaN and AlN.
Preferably silicon.
The transition zone 0122 grown on substrate, the material of the transition zone are selected from the one of AlN, GaN, AlGaN and InGaN
Kind is several.The preferably combination of AlN, AlGaN, GaN.
The raw long channel layer 0125 on transition zone, the material of the channel layer are selected from one kind of GaN, AlGaN and InGaN
Or it is several.Preferably GaN.
The barrier layer 0124 grown on channel layer, the barrier layer include barrier layer A 0124A and barrier layer B
0124B, the barrier layer A are alternately arranged with the barrier layer B.
The energy gap of the barrier layer A is more than the energy gap of the barrier layer B.
Barrier layer A is AlInGaN, and the content of Al is 0%-100%, and the content of In is 0%-100%, and the content of Ga is
0%-100%；The content summation of described Al, In and Ga are 100%；Thickness is 0.5nm-10nm；Quantity is more than 2.
Preferably, in barrier layer A, the content of Al is 0%-50%, and the content of In is 0%-50%, and the content of Ga is 0%-
100%；The content summation of described Al, In and Ga are 100%；
In barrier layer B, the content of Al is 0%-100%, and the content of In is 0%-100%, and the content of Ga is 0%-
100%；The content summation of described Al, In and Ga are 100%.Thickness is 0.5nm-10nm；Quantity is more than 2.
Preferably, in barrier layer B, the content of Al is 0%-50%, and the content of In is 0%-50%, and the content of Ga is 0%-
100%；The content summation of described Al, In and Ga are 100%；
For AlInGaN, if fixed Ga components, then Al components are higher, then material energy gap is bigger.For
AlInGaN, if fixed In components, then Al components are higher, then material energy gap is bigger.For AlInGaN, if fixed Al groups
Point, then Ga components are higher, then material energy gap is bigger.
The thickness of the barrier layer is 10nm-50nm.
P-GaN layer 0102 is grown on barrier layer, and selective etch is carried out to p-GaN layer 0102, defines gate structure.It
Afterwards, on barrier layer B 0124B and p-GaN layer 0102, source electrode 0101, drain electrode 0105, grid 0104, gate window 0103 are prepared
With dielectric layer 0125, the enhanced HEMT devices of P-GaN are obtained.
The material of the dielectric layer is selected from common dielectric layer material, it is possible to understand that, dielectric layer material includes but unlimited
In SiN, SiO2、Al2O3、AlN、HfO2And Ga2O3One or more.
The enhanced HEMT devices of P-GaN of the present invention are described in further detail below in conjunction with specific embodiment.
Embodiment 1
The present embodiment provides a kind of enhanced HEMT devices of P-GaN, structure is as shown in Figure 1, including substrate 0121, transition zone
0122, channel layer 0125, barrier layer 0124, p-GaN layer 0102, source electrode 0101, drain electrode 0105, grid 0104, gate window
0103 and dielectric layer 0125；
The substrate material is silicon；The material of the dielectric layer is SiO2；The material of the channel layer is GaN；The mistake
The material for crossing layer is the combination of AlN, AlGaN, GaN.
The barrier layer includes that barrier layer A 0124A and barrier layer B 0124B, the barrier layer A and the barrier layer B are handed over
For arrangement, the quantity of barrier layer A is 3, thickness 5nm；The quantity of barrier layer B is 3, thickness 5nm；The overall thickness of barrier layer is
30nm。
The material of barrier layer A is AlGaN, and the group of Al is divided into 25%；
The material of barrier layer B is GaN.
The energy gap of barrier layer A is more than the energy gap of the barrier layer B.
Embodiment 2
The present embodiment provides a kind of enhanced HEMT devices of P-GaN, structure is as shown in Figure 1, including substrate 0121, transition zone
0122, channel layer 0125, barrier layer 0124, p-GaN layer 0102, source electrode 0101, drain electrode 0105, grid 0104, gate window
0103 and dielectric layer 0125；
The substrate material is silicon；The material of the dielectric layer is SiO2；The material of the channel layer is GaN；The mistake
The material for crossing layer is the combination of AlN, AlGaN, GaN.
The barrier layer includes that barrier layer A 0124A and barrier layer B 0124B, the barrier layer A and the barrier layer B are handed over
For arrangement, the quantity of barrier layer A is 4, thickness 4nm；The quantity of barrier layer B is 4, thickness 4nm；The overall thickness of barrier layer is
32nm。
The material of barrier layer A is AlInGaN, and the group of Al is divided into 73%, In groups and is divided into 17%；
The material of barrier layer B is AlInGaN, and the group that the group of Al is divided into 2%, In is divided into 1%.
The energy gap of barrier layer A is more than the energy gap of the barrier layer B.
The enhanced HEMT device of p-GaN bases of the present invention, barrier layer is thicker, effectively reduces Mg atoms permeatings to channel layer
Quantity improves the working efficiency of HEMT device；Meanwhile influences of the barrier layer B of smaller energy gap to threshold voltage is smaller,
Be conducive to obtain the threshold voltage of positive value, the thickness of barrier layer of the present invention is about 10nm-50nm, and threshold voltage is about 0.2V-3V.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
Cannot the limitation to the scope of the claims of the present invention therefore be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (9)
1. a kind of enhanced HEMT device of p-GaN bases, which is characterized in that including：
Substrate；
Transition zone over the substrate；
Channel layer on the transition zone；
Barrier layer on the channel layer；
P-GaN layer on the barrier layer；And
Source electrode, drain electrode, grid on the barrier layer and the p-GaN layer and dielectric layer；
The barrier layer includes barrier layer A and barrier layer B, the barrier layer A and the barrier layer B alternately laminated；
The energy gap of the barrier layer A is more than the energy gap of the barrier layer B.
2. the enhanced HEMT device of p-GaN bases according to claim 1, which is characterized in that
The barrier layer A is AlInGaN, and wherein the content of Al is 0%-100%, and the content of In is 0%-100%, the content of Ga
For 0%-100%；The content summation of described Al, In and Ga are 100%；
The barrier layer B is AlInGaN, wherein the content of Al is 0%-100%, and the content of In is 0%-100%, and Ga's contains
Amount is 0%-100%；The content summation of described Al, In and Ga are 100%.
3. the enhanced HEMT device of p-GaN bases according to claim 2, which is characterized in that
The barrier layer A is AlInGaN, wherein the content of Al is 0%-50%, and the content of In is 0%-50%, the content of Ga
For 0%-100%；The content summation of described Al, In and Ga are 100%；
The barrier layer B is AlInGaN, wherein the content of Al is 0%-50%, and the content of In is 0%-50%, the content of Ga
For 0%-100%；The content summation of described Al, In and Ga are 100%.
4. the enhanced HEMT device of p-GaN bases according to claim 1, which is characterized in that the barrier layer thickness is
10nm-50nm。
5. the enhanced HEMT device of p-GaN bases according to claim 1, which is characterized in that the thickness of the barrier layer A is
0.5nm-10nm；Quantity is more than 2.
6. the enhanced HEMT device of p-GaN bases according to claim 1, which is characterized in that the thickness of the barrier layer B
Degree is 0.5nm-10nm；Quantity is more than 2.
7. according to the enhanced HEMT device of claim 1-6 any one of them p-GaN bases, which is characterized in that the substrate material
One or more of the material selected from silicon, silicon carbide, sapphire, GaN and AlN.
8. according to the enhanced HEMT device of claim 1-6 any one of them p-GaN bases, which is characterized in that the transition zone
Material be selected from AlN, GaN, AlGaN and InGaN one or more.
9. according to the enhanced HEMT device of claim 1-6 any one of them p-GaN bases, which is characterized in that the channel layer
Material be selected from GaN, AlGaN and InGaN one or more.
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| CN109950150A (en) * | 2019-03-07 | 2019-06-28 | 苏州汉骅半导体有限公司 | Semiconductor structure and its manufacturing method |
| CN110600547A (en) * | 2019-09-19 | 2019-12-20 | 厦门市三安集成电路有限公司 | Gallium nitride-based semiconductor device and manufacturing method thereof |
| CN111477536A (en) * | 2020-03-31 | 2020-07-31 | 华为技术有限公司 | Semiconductor epitaxial structure and semiconductor device |
| WO2021196974A1 (en) * | 2020-03-31 | 2021-10-07 | 华为技术有限公司 | Semiconductor epitaxial structure and semiconductor device |
| WO2022016390A1 (en) * | 2020-07-21 | 2022-01-27 | 苏州晶湛半导体有限公司 | Semiconductor structure |
| CN112563136A (en) * | 2020-11-19 | 2021-03-26 | 上海工程技术大学 | Novel preparation method of gallium nitride-based power device |
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