CN108505122A - A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique - Google Patents

A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique Download PDF

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Publication number
CN108505122A
CN108505122A CN201810347257.2A CN201810347257A CN108505122A CN 108505122 A CN108505122 A CN 108505122A CN 201810347257 A CN201810347257 A CN 201810347257A CN 108505122 A CN108505122 A CN 108505122A
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CN
China
Prior art keywords
wool
buddha
polycrystalline silicon
making herbs
wire cutting
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810347257.2A
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Chinese (zh)
Inventor
李虹罡
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In Building Materials Jetion Science And Technology Co Ltd
Jetion Solar Jiangsu Co Ltd
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In Building Materials Jetion Science And Technology Co Ltd
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Application filed by In Building Materials Jetion Science And Technology Co Ltd filed Critical In Building Materials Jetion Science And Technology Co Ltd
Priority to CN201810347257.2A priority Critical patent/CN108505122A/en
Publication of CN108505122A publication Critical patent/CN108505122A/en
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08Etching
    • C30B33/10Etching in solutions or melts
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

Abstract

Disclosed by the invention to belong to technical field of solar cell manufacturing, specially a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique, the Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique includes the following steps:S1:Feedstock processing;S2:Making herbs into wool:Will treated that polysilicon chip is put into sour mixed solution carries out making herbs into wool, obtain the polysilicon chip after making herbs into wool;S3:Cleaning:Polysilicon chip after making herbs into wool is adopted and is rinsed with water 35 times, is then rinsed 30 40 seconds using lye again, then is rinsed with water 35 times;S4:It air-dries:Polysilicon chip after cleaning is subjected to natural air drying, a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique that the invention proposes, making herbs into wool efficiency under the system of rich nitric acid greatly improves, and corrode the hole it is small cut uniformly, make the polysilicon chip matte after making herbs into wool evenly, reflectivity it is lower, the electricity conversion of polycrystal silicon cell is substantially increased, manufacture craft is simple, of low cost.

Description

A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique
Technical field
The present invention relates to technical field of solar cell manufacturing, specially a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing work Skill.
Background technology
There are mainly two types of the cutting modes of solar cell polysilicon piece, and one is free abrasive wire cutting, a wires Silicon carbide abrasive slurry is coordinated to carry out, the cutting of abbreviation mortar, another kind is consolidating material and diamond abrasive saw blade cutting, and abbreviation diamond wire is cut It cuts, the former is commonly used for photovoltaic industry, but the technology there are cutting efficiencies low, high processing costs, waste mortar exhaust emission The problems such as big.Compared with the method for mortar cutting, ring is more conducive to because it has with the dicing method of Buddha's warrior attendant wire cutting polycrystal silicon ingot The advantages such as guarantor, the reduction cost space with bigger, the efficiency space of promotion polycrystalline silicon battery plate with bigger and obtain wide The concern of large slice producer.At present during manufacture of solar cells, mostly uses acid solution and texturing is carried out to silicon chip surface (making herbs into wool) is handled, and silicon chip surface reflectivity is made to be substantially reduced, and then improves the electricity conversion of solar cell.But it is existing The obtained reflectivity of matte of process for etching it is higher so that the transformation efficiency of battery substantially reduces, for this purpose, it is proposed that a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique.
Invention content
The purpose of the present invention is to provide a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing techniques, to solve above-mentioned background technology The reflectivity for the matte that the existing process for etching of middle proposition obtains is higher so that the transformation efficiency of battery substantially reduced asks Topic.
To achieve the above object, the present invention provides the following technical solutions:A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique, The Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique includes the following steps:
S1:Feedstock processing:Polysilicon chip is put into cleaning agent, is cleaned using ultrasonic wave, scavenging period 10-14 Minute, it then washes with water 3-5 times, then using being cleaned by ultrasonic 10-14 minutes, take out, rinses, drying;
S2:Making herbs into wool:Will treated that polysilicon chip is put into sour mixed solution carries out making herbs into wool, obtain the polysilicon after making herbs into wool Piece;
S3:Cleaning:Polysilicon chip after making herbs into wool is adopted and is rinsed with water 3-5 times, then uses lye to rinse 30-40 seconds again, It is rinsed with water 3-5 times again;
S4:It air-dries:Polysilicon chip after cleaning is subjected to natural air drying.
Preferably, the cleaning agent in the step S1 is acetone.
Preferably, the water in the step S1 and step S3 is ultra-pure water.
Preferably, the sour mixed solution in the step S2 includes hydrofluoric acid, nitric acid and ultra-pure water, the hydrofluoric acid, nitre Component ratio between acid and ultra-pure water is 1:3.8:2.
Preferably, the making herbs into wool temperature in the step S2 is 7-12 degrees Celsius, and the time is 60-150 seconds.
Preferably, the lye in the step S3 is sodium hydroxide, and a concentration of the 5% of sodium hydroxide.
Compared with prior art, the beneficial effects of the invention are as follows:A kind of Buddha's warrior attendant wire cutting polysilicon chip that the invention proposes Process for etching, the making herbs into wool efficiency under the system of rich nitric acid greatly improve, and corrode the hole it is small cut uniformly, make more after making herbs into wool Crystal silicon chip matte evenly, reflectivity it is lower, substantially increase the electricity conversion of polycrystal silicon cell, manufacture craft is simple, It is of low cost.
Description of the drawings
Fig. 1 is present invention process flow chart.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique:
Embodiment 1
The Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique includes the following steps:
S1:Feedstock processing:Polysilicon chip is put into cleaning agent, is cleaned using ultrasonic wave, scavenging period is 14 points Then clock washes with water 5 times, then using being cleaned by ultrasonic 14 minutes, take out, and rinses, drying, and cleaning agent is acetone, and water is ultrapure Water;
S2:Making herbs into wool:Will treated that polysilicon chip is put into sour mixed solution carries out making herbs into wool, obtain the polysilicon after making herbs into wool Piece, sour mixed solution include hydrofluoric acid, nitric acid and ultra-pure water, and the component ratio between the hydrofluoric acid, nitric acid and ultra-pure water is 1: 3.8:2, making herbs into wool temperature is 12 degrees Celsius, and the time is 150 seconds;
S3:Cleaning:Polysilicon chip after making herbs into wool is adopted and is rinsed with water 5 times, then uses lye to rinse 40 seconds again, then use water It rinses 5 times, water is ultra-pure water, and lye is sodium hydroxide, and a concentration of the 5% of sodium hydroxide;
S4:It air-dries:Polysilicon chip after cleaning is subjected to natural air drying.
Embodiment 2
The Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique includes the following steps:
S1:Feedstock processing:Polysilicon chip is put into cleaning agent, is cleaned using ultrasonic wave, scavenging period is 10 points Then clock washes with water 3 times, then using being cleaned by ultrasonic 10 minutes, take out, and rinses, drying, and cleaning agent is acetone, and water is ultrapure Water;
S2:Making herbs into wool:Will treated that polysilicon chip is put into sour mixed solution carries out making herbs into wool, obtain the polysilicon after making herbs into wool Piece, sour mixed solution include hydrofluoric acid, nitric acid and ultra-pure water, and the component ratio between the hydrofluoric acid, nitric acid and ultra-pure water is 1: 3.8:2, making herbs into wool temperature is 7 degrees Celsius, and the time is 60 seconds;
S3:Cleaning:Polysilicon chip after making herbs into wool is adopted and is rinsed with water 3 times, then uses lye to rinse 30 seconds again, then use water It rinses 3 times, water is ultra-pure water, and lye is sodium hydroxide, and a concentration of the 5% of sodium hydroxide;
S4:It air-dries:Polysilicon chip after cleaning is subjected to natural air drying.
Embodiment 3
The Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique includes the following steps:
S1:Feedstock processing:Polysilicon chip is put into cleaning agent, is cleaned using ultrasonic wave, scavenging period is 12 points Then clock washes with water 4 times, then using being cleaned by ultrasonic 12 minutes, take out, and rinses, drying, and cleaning agent is acetone, and water is ultrapure Water;
S2:Making herbs into wool:Will treated that polysilicon chip is put into sour mixed solution carries out making herbs into wool, obtain the polysilicon after making herbs into wool Piece, sour mixed solution include hydrofluoric acid, nitric acid and ultra-pure water, and the component ratio between the hydrofluoric acid, nitric acid and ultra-pure water is 1: 3.8:2, making herbs into wool temperature is 10 degrees Celsius, and the time is 105 seconds;
S3:Cleaning:Polysilicon chip after making herbs into wool is adopted and is rinsed with water 4 times, then uses lye to rinse 35 seconds again, then use water It rinses 4 times, water is ultra-pure water, and lye is sodium hydroxide, and a concentration of the 5% of sodium hydroxide;
S4:It air-dries:Polysilicon chip after cleaning is subjected to natural air drying.
In summary embodiment, highly preferred embodiment of the present invention are embodiment 3, the Buddha's warrior attendant wire cutting polycrystalline silicon texturing work Skill, the making herbs into wool efficiency under the system of rich nitric acid greatly improve, and corrode the hole it is small cut uniformly, make the polysilicon chip after making herbs into wool Matte evenly, reflectivity it is lower, substantially increase the electricity conversion of polycrystal silicon cell, manufacture craft is simple, at low cost It is honest and clean.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace And modification, the scope of the present invention is defined by the appended.

Claims (6)

1. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique, it is characterised in that:The Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique Include the following steps:
S1:Feedstock processing:Polysilicon chip is put into cleaning agent, is cleaned using ultrasonic wave, scavenging period is 10-14 points Then clock washes with water 3-5 times, then using being cleaned by ultrasonic 10-14 minutes, take out, and rinses, drying;
S2:Making herbs into wool:Will treated that polysilicon chip is put into sour mixed solution carries out making herbs into wool, obtain the polysilicon chip after making herbs into wool;
S3:Cleaning:Polysilicon chip after making herbs into wool is adopted and is rinsed with water 3-5 times, then uses lye to rinse 30-40 seconds again, then use Water rinses 3-5 times;
S4:It air-dries:Polysilicon chip after cleaning is subjected to natural air drying.
2. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique according to claim 1, it is characterised in that:The step S1 In cleaning agent be acetone.
3. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique according to claim 1, it is characterised in that:The step S1 It is ultra-pure water with the water in step S3.
4. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique according to claim 1, it is characterised in that:The step S2 In sour mixed solution include hydrofluoric acid, nitric acid and ultra-pure water, the component ratio between the hydrofluoric acid, nitric acid and ultra-pure water is 1: 3.8:2。
5. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique according to claim 1, it is characterised in that:The step S2 In making herbs into wool temperature be 7-12 degrees Celsius, the time be 60-150 seconds.
6. a kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique according to claim 1, it is characterised in that:The step S3 In lye be sodium hydroxide, and a concentration of the 5% of sodium hydroxide.
CN201810347257.2A 2018-04-18 2018-04-18 A kind of Buddha's warrior attendant wire cutting polycrystalline silicon texturing technique Pending CN108505122A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04357106A (en) * 1991-05-31 1992-12-10 Tokuyama Soda Co Ltd Purifued silicon and its production
CN105932078A (en) * 2016-01-15 2016-09-07 北京创世捷能机器人有限公司 Texturing method of polycrystalline silicon wafer cut by diamond wire
CN107393818A (en) * 2017-06-27 2017-11-24 江苏大学 A kind of secondary etching method of the soda acid of polysilicon solar cell and its polysilicon

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04357106A (en) * 1991-05-31 1992-12-10 Tokuyama Soda Co Ltd Purifued silicon and its production
CN105932078A (en) * 2016-01-15 2016-09-07 北京创世捷能机器人有限公司 Texturing method of polycrystalline silicon wafer cut by diamond wire
CN107393818A (en) * 2017-06-27 2017-11-24 江苏大学 A kind of secondary etching method of the soda acid of polysilicon solar cell and its polysilicon

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Application publication date: 20180907

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