CN108475014A - Photosensitive polymer combination and semiconductor device manufacturing method - Google Patents
Photosensitive polymer combination and semiconductor device manufacturing method Download PDFInfo
- Publication number
- CN108475014A CN108475014A CN201680076774.XA CN201680076774A CN108475014A CN 108475014 A CN108475014 A CN 108475014A CN 201680076774 A CN201680076774 A CN 201680076774A CN 108475014 A CN108475014 A CN 108475014A
- Authority
- CN
- China
- Prior art keywords
- film
- photosensitive polymer
- polymer combination
- particle
- ion implanting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 229920000642 polymer Polymers 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 87
- 239000002245 particle Substances 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000000203 mixture Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 25
- 238000001354 calcination Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 19
- 239000012535 impurity Substances 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 239000011856 silicon-based particle Substances 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000011342 resin composition Substances 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000007261 regionalization Effects 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 description 157
- 239000002585 base Substances 0.000 description 71
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 49
- 229910010271 silicon carbide Inorganic materials 0.000 description 46
- 239000000243 solution Substances 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 238000011161 development Methods 0.000 description 14
- 230000018109 developmental process Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 239000002904 solvent Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 10
- 229910052906 cristobalite Inorganic materials 0.000 description 10
- 229910052682 stishovite Inorganic materials 0.000 description 10
- 229910052905 tridymite Inorganic materials 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 229940090044 injection Drugs 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000005543 nano-size silicon particle Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000011164 primary particle Substances 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- -1 siloxanes Chemical class 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000003321 amplification Effects 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 229960002050 hydrofluoric acid Drugs 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 230000001151 other effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical class [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001725 laser pyrolysis Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Manufacturing method with high heat resistance and semiconductor equipment conductive, there is no the photosensitive polymer combination for the ion implantation technology for generating the worry of metal impurities, capable of carrying out pattern formation and capable of being applied to high temperature with low cost for semiconductor substrate and using such composition is provided.The photosensitive polymer combination of the present invention contains the particle of photoresist and conductive material and/or semi-conducting material.In addition, manufacture semiconductor equipment the method for the present invention includes：In the step of forming pattern (11) of film of photosensitive polymer combination of the invention on semiconductor layer or base material (2)；The step of calcining the pattern of the film of photosensitive polymer combination to form ion implanting mask (13)；The step of ion being injected by the pattern openings portion (12) of ion implanting mask to semiconductor layer or base material (2)；With, removal ion implanting with mask (13) the step of.
Description
Technical field
The present invention relates to the semiconductor equipment manufacturers of photosensitive polymer combination and the use photosensitive polymer combination
Method.
Background technology
Most of present power semiconductor device is manufactured using semiconductor Si.Use power semiconductor obtained from Si
In equipment, the limit of the performance because of caused by the material property of Si has been approached.SiC as semi-conducting material, which has, to be substantially exceeded
The voltage-resistent characteristic of semiconductor Si, high saturated electrons mobility, high heat conductance.Therefore, because can partly be led by improving power
The performance of body equipment, low lossization and cooling mechanism for equipment simplification and make system compact, therefore as next epoch
Power semiconductor material is promising.
In order to manufacture SiC power apparatus, the expectations section into SiC is needed to inject ion and dosed carrier.To SiC's
In ion doping, the diffusion coefficient of the dopant of SiC is small, it is difficult to apply thermal diffusion method, therefore be widely used based on ion implanting
Doping method.
Ion implanting by the step of ion implanting makes SiC low resistance, needing progress high dose.But such as
Fruit carries out the ion implanting of high concentration at room temperature, then causes that SiC's is decrystallized, is unable to get the equipment performance of expectation.In addition,
Temporary decrystallized SiC is difficult to restore s by forged burning etc. same crystalline identical more with before ion implanting to having
Crystalline structure.
It is thus known that high temperature tension method, wherein in the ion implanting step to SiC, by remaining base material
200 DEG C or more of high temperature restores the crystallographic of base material with ion implanting simultaneously.
In above-mentioned high temperature tension method, due to carrying out ion implanting at a high temperature of 200 DEG C or more, as from
Sub- implantation mask layer, can not using at room temperature ion implanting, for example to silicon carry out ion implanting in use Other substrate materials,
Such as chemical amplification photo etching glue.
Therefore, in above-mentioned high temperature tension method, as ion implanting mask, it is proposed that use is in ion implanting step
Base material temperature under with abundant heat resistance SiO2Equal inoranic membranes for example pass through chemical vapour deposition technique (CVD：Chemical
Vapor Transport (CVD)) etc. and deposit SiO2Equal inoranic membranes (such as patent document 1).By by such heat resistance
Ion implanting mask carry out pattern on semiconductor SiC in advance and formed, can be half by the opening portion of ion implanting mask
Charge-carrier dopant is carried out in desired region in conductor SiC.
During the pattern of the ion implanting mask of such heat resistance is formed, lost as the wet type of mask using photoresist is used
The dry processes such as lithography, reactive ion-etching (RIE).
The example of above-mentioned ion implanting mask forming step and ion implanting step is illustrated using Fig. 2.
First, the SiC base materials (2) (Fig. 2 (a)) with SiC epitaxial films (1) are provided, in the SiC epitaxial films
(1) on, SiO is deposited by CVD method etc.2Film (3) (Fig. 2 (b)).Then, in SiO2On film (3), by photonasty resist (4) into
Row film (Fig. 2 (c)).Thereafter, carry out being formed as the pattern of common lithography step it is exposed and developed, carry out photonasty it is against corrosion
The pattern of agent forms (Fig. 2 (d)).Thereafter, SiO is carried out by hydrofluoric acid etc.2The removal of film is obtained with mask pattern opening portion
(12) expectation SiO2Film figure (Fig. 2 (e)).Then, pass through O2Ashing carries out the stripping (Fig. 2 (f)) of photonasty resist.Its
Afterwards, using the beam of dopant ion (7), ion implanting is carried out at a high temperature of 200 DEG C or more, forms ion implanted regions (6)
(Fig. 2 (g)), and SiO is removed by using the wet process of hydrofluoric acid etc.2Film (Fig. 2 (h)).
The number of steps of ion implantation technology, is more, is complicated and high cost process, therefore it is required that the simplification of technique.
In order to make technique simplify, it is proposed that using chemical amplification photo etching glue as ion implanting mask and in room temperature
The lower means (such as patent document 2) for carrying out ion implanting.
As in patent document 1 and 2, the semiconductor to being ion implanted the covering of the insulator films such as mask carries out high density
When ion implanting, the electrification (charge-up) generated in base material and insulator film becomes problem.In ion implanting step if
Base material and insulator film charge, then the insulators such as the region of the ion implanting in carrying out semiconductor, ion implanting mask and half
Potential difference is generated between conductor substrate, and electric discharge phenomena occur sometimes.In addition, because of the space electric field generated by electrification, cause
Sometimes the unevenness that injected ion concentration occurs homogenizes.These reasons are known as, cause covering insulated body film
When semiconductor carries out high density ion implanting, lead to the performance of semiconductor equipment and the reduction of yield.The electrification phenomenon is especially
In semiconductor surface by with SiO2Headed by insulator film covering in the case of be significant.
In order to solve the problems, such as above-mentioned electrification, it is proposed that have to substrate surface supply low with injection ion opposite polarity
The secondary ion of energy takes a shower and realizes the means (such as patent document 3) of the neutralization of the electrification of base material.
Other than the means for using ion shower, as the means for solving the problems, such as above-mentioned electrification, it is also proposed that utilize
The technology of following means：When carrying out ion implanting, the anti-charged membranes of electric conductivity such as metal film, doped semiconductor film are used in advance
Cover the ion implanting mask (such as patent document 4) of insulating properties.
In addition, for the purpose of being improved using ion implanting mask as ion barrier, it is proposed that using density, big, ion hides
Cover means (such as patent document 5) of the metallic films such as the high titanium of performance, molybdenum as ion implanting mask.
It should be noted that as the means for omitting the technique that ion implantation mask layer is formed, it is known to use containing siloxanes
The technique (such as patent document 6) of photoresist.
Existing technical literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2006-324585 bulletins
Patent document 2：Japanese Unexamined Patent Publication 2008-108869 bulletins
Patent document 3：Japanese Unexamined Patent Publication 6-295700 bulletins
Patent document 4：Japanese Unexamined Patent Publication 7-58053 bulletins
Patent document 5：Japanese Unexamined Patent Publication 2007-42803 bulletins
Patent document 6：International Publication No. 2013/099785.
Invention content
Problems to be solved by the invention
Patent document 1 describes the SiO that will be grown by CVD method2The means that film is utilized as ion implanting mask.The hand
Duan Zhong, SiO2The excellent heat resistance of film, therefore ion implanting can be carried out at high temperature, but SiO2The pattern of film, which is formed, to be needed again
Miscellaneous technique is high-cost.In addition, as described above, the SiO as ion implanting mask2Film does not have electric conductivity, therefore
In highdensity ion implanting step, there are problems that charging this project.
Patent document 2 describes the means for utilizing chemical amplification photo etching glue as ion implanting mask.The hand
Section is inexpensive, but since the heat resistance of chemical amplification photo etching glue is low, existing can not be applied to due to simple process
The project of high temperature tension technique.In addition, as described above, chemical amplification photo etching glue does not have electric conductivity, therefore in height
In the ion implanting step of density, there are problems that charging this project.
Patent document 3 describes the means that electrification is solved the problems, such as using ion shower.Means needs are set in semiconductor
Ion shower device is set in standby manufacturing device, therefore there are high-cost projects.In addition, the control of ion shower supply amount is tired
It is difficult, it is difficult in the electrification that there is no surpluses to generate in insufficient and on substrate surface, it is difficult to be fully solved the class of electrification
Topic.
Patent document 4 describes when carrying out ion implanting, uses the electric conductivity such as metal film, doped semiconductor film in advance
The means of the ion implanting mask of anti-charged membrane covering insulating properties.The means need in the pattern of the anti-charged membrane of electric conductivity is formed
Complicated technique, is high-cost.In addition, the case where metal is used as ion implanting mask and the feelings that metal is used as to conductive film
In condition, due to metal impurities being mixed into semiconductor substrate, it is possible to the performance of semiconductor equipment and yield be caused to reduce.
Patent document 5 describes the means for utilizing the metallic films such as titanium, molybdenum as ion implanting mask.The means
In, the excellent heat resistance of metallic film and conductive, therefore can be in the case where not leading to the problem of electrification in high temperature
Lower carry out ion implanting.On the other hand, in order to which the pattern for carrying out the metallic films such as titanium, molybdenum is formed, complicated technique is needed, is high
Cost.In addition, in the case of metal is used as ion implanting mask, due to metal impurities being mixed into semiconductor substrate,
The performance and yield for being likely to result in semiconductor equipment reduce.
Patent document 6 is described carries out pattern formation simultaneously by the photosensitive polymer combination containing polysiloxane on base material
Carry out forged burning, the means for the calcining article pattern that polysiloxanes is thus obtained on base material.The means can be formed on base material
With until 1000 DEG C of heat resistance ion implanting mask pattern, but polysiloxanes calcined material does not have electric conductivity, therefore nothing
Method solves the problems, such as electrification when ion implanting.
In the present invention, carried out in view of background as described above, provide with high heat resistance and it is conductive, half-and-half
There is no generate the worry of metal impurities, can carry out pattern formation and can be applied to height with low cost for conductor substrate
The photosensitive polymer combination of the ion implantation technology of temperature.
The means to solve the problem
For the above subject, present inventor etc. contemplates following present invention.
1 ＞ photosensitive polymer combinations of ＜, containing photoresist and conductive material and/or semi-conducting material
Particle.
Compositions of 2 ＞ of ＜ according to 1 ＞ of above-mentioned ＜, wherein aforementioned particles are metal, semimetal or combination thereof
Particle.
Compositions of 3 ＞ of ＜ according to 2 ＞ of above-mentioned ＜, wherein aforementioned particles are silicon particle.
Compositions of 4 ＞ of ＜ according to 3 ＞ of above-mentioned ＜, wherein aforementioned silicon particle contains among 13 races and 15 race's elements extremely
A kind of few element is as dopant.
Compositions of 5 ＞ of ＜ according to 4 ＞ of above-mentioned ＜, wherein aforementioned silicon particle contains boron or phosphorus as dopant.
Compositions of 6 ＞ of ＜ according to 5 ＞ of above-mentioned ＜ 4 ＞ or ＜, wherein aforementioned dopants in aforementioned silicon particle it is a concentration of
1018A atom/cm3More than.
Compositions of 7 ＞ of ＜ according to any one of above-mentioned 3 ＞ of ＜ ~ ＜, 6 ＞, wherein metals content impurity is for each metal member
It is 100ppb or less for element.
Compositions of 8 ＞ of ＜ according to any one of above-mentioned 1 ＞ of ＜ ~ ＜, 7 ＞, wherein the average grain diameter of aforementioned particles be 1 ~
500nm。
Compositions of 9 ＞ of ＜ according to 8 ＞ of above-mentioned ＜, wherein the average grain diameter of aforementioned particles is 1 ~ 100nm.
Compositions of 10 ＞ of ＜ according to any one of above-mentioned 1 ＞ of ＜ ~ ＜, 9 ＞, wherein by photosensitive resin combination
When film carries out 800 DEG C of calcining in 1 hour under air and obtains the mask layer that film thickness is 0.5 μm, the sheet resistance of the mask layer
It is 1012Ω/ or less.
Compositions of 11 ＞ of ＜ according to any one of above-mentioned 1 ＞ of ＜ ~ ＜, 10 ＞, also contains silicone compounds.
The manufacturing method of 12 ＞ semiconductor equipments of ＜ comprising：
The figure of the film of the photosensitive polymer combination described in any one of above-mentioned 1 ＞ of ＜ ~ ＜, 11 ＞ is formed on semiconductor layer or base material
The step of case；
The step of calcining the pattern of the film of photosensitive resin combination to form ion implanting mask；
The step of ion being injected by the pattern openings portion of foregoing ion injection mask to aforementioned semiconductor layer or base material；With
The step of removing foregoing ion injection mask.
Methods of 13 ＞ of ＜ according to 12 ＞ of above-mentioned ＜, wherein photosensitive resin is formed on semiconductor layer or base material
The step of pattern of the film of composition includes：The photonasty described in any one of above-mentioned 1 ＞ of ＜ ~ ＜, 11 ＞ is formed on a semiconductor substrate
The film of resin combination, and the film of photosensitive resin combination progress pattern is formed exposed and developed.
Methods of 14 ＞ of ＜ according to 13 ＞ of above-mentioned ＜ 12 ＞ or ＜, wherein aforementioned semiconductor layer or base material are SiC layer or base
Material.
Methods of 15 ＞ of ＜ according to any one of above-mentioned 12 ＞ of ＜ ~ ＜, 14 ＞, wherein aforementioned in ion implanting step is partly led
The temperature of body layer or base material is 200 DEG C or more.
The effect of invention
Photosensitive polymer combination according to the present invention, can compared with previous technique in the ion implantation technology of high temperature
Process is saved, the manufacturing process of low cost is capable of providing.In addition, photosensitive polymer combination according to the present invention, can provide
The anti-band for anti-charge and on necessary anti-Charging system or semiconductor equipment in previous ion implantation technology can be omitted
The manufacturing process of galvanic process.Therefore, manufacturing method according to the invention, compared with previous method, can provide productivity and
The manufacturing process of the power semiconductor of high income and low cost.
Description of the drawings
Fig. 1 is the schematic diagram of the technique of the ion implanting in the present invention.
Fig. 2 is the schematic diagram of the technique of ion implanting in the prior art.
The figure of Al concentration distributions obtained from being measured as SIMS for depth direction is shown in Fig. 3.
Specific implementation mode
《Photoreceptor resin combination》
The photoreceptor resin combination of the present invention contains of photoresist and conductive material and/or semi-conducting material
Grain.
As the photoresist that uses in the photosensitive polymer combination of the present invention, can arbitrarily select to have it is negative or
Positive photonasty can especially use the photoresist used in formation of the ion implanting with mask.The sense of the present invention
Mask that photosensitive resin composition can use in ion implanting step in order to obtain and use.
The particle ＞ of ＜ conductive materials and/or semi-conducting material
The conductive material and/or semi-conducting material for constituting the particle used in the present invention can be selected, so that：It uses
The photosensitive polymer combination of the present invention and when forming ion implanting mask and carrying out ion implanting, mask have for
Sufficient electric conductivity for the electrification (charge-up) occurred in inhibition semiconductor layer or base material and ion implanting mask.
Particle used in the present invention can use the particle of single kind, can also be applied in combination of more than two kinds
Particle.
Specifically, as the conductive material and/or semi-conducting material, it can select have such as 1 × 1012Ω m with
Under, 1 × 109Ω m or less, 1 × 106Ω m or less, 1 × 103Ω m or less, 1 Ω m or less, 1 × 10-3Ω m or less or 1 × 10-6
The material of Ω m resistivity below.
Among these, from even if in the ion implanting step for carrying out high-throughput with 100mA grades of high beam density
From the perspective of preventing electrification, as the conductive material and/or semi-conducting material, it can select have preferably 1 × 103Ω
M or less, more preferably 1 Ω m or less, further preferably 1 × 10-3Ω m or less, particularly preferably 1 × 10-6Ω m electricity below
The material of resistance rate.
In addition, conductive material and/or semi-conducting material can be selected, so that by photosensitive polymer combination
When film carries out 800 DEG C of calcining in 1 hour under air and obtains the mask layer that film thickness is 0.5 μm, the sheet resistance of the mask layer
It is 1012Ω/ or less, 1011Ω/ or less or 1010Ω/ or less.
From the viewpoint of so that the pattern form in ion implanting step is stablized, the particle used in the present invention preferably has
Have more than the particle of the material of the fusing point of the temperature of the semiconductor layer or base material in ion implanting step.
Thus, for example particle used in the present invention, can use with such as 400 DEG C or more, 600 DEG C or more,
The particle of the material of 800 DEG C or more, 1000 DEG C or more, 1200 DEG C or more or 1500 DEG C or more of fusing point.
The average primary particle diameter of the particle used in the present invention can be set as 500nm or less, 200nm or less, 100nm with
Under, 50nm or less, 20nm or less or 5nm or less.In addition, the average primary particle diameter of the particle used in the present invention can be set as
1nm or more, 3nm or more, 5nm or more, 10nm or more or 20nm or more.
In addition, the average primary particle diameter of the particle used in the present invention in order to inhibit pattern formed exposure when light scattering,
And reduce the infiltration of pattern, thus be preferably set to 200nm or less, 100nm or less, 50nm or less, 20nm or less or 5nm with
Under.
Here, in the present invention, the average primary particle diameter of particle can by using scanning electron microscope (SEM), thoroughly
The observation of emitting electron microscope (TEM) etc. directly measures projected area based on shooting obtained image and justifies equivalent diameter,
Gather the particle group that number is 100 or more by analysis, is found out as the equal primary particle size of number.
Particle used in the present invention can use the particle of metal, semimetal or combination thereof.Here, making
For semimetal, silicon, germanium etc. can be enumerated.
In the step of semiconductor layer or base material are heated to high temperature and carry out ion implanting, in order to prevent because metal impurities are led
The semiconductor layer of cause or base material polluted dyes are, it is preferable to use the particle of semi-conducting material, particularly identical as semiconductor layer or base material
Semi-conducting material particle.
Thus, for example the particle used in the present invention is silicon (Si), germanium (Ge), diamond (C), silicon carbide (SiC), germanium
Silicon (SiGe), gallium nitride (GaN), indium phosphide (InP), GaAs (GaAs), cadmium sulfide (CdS), zinc selenide (ZnSe), zinc oxide
(ZnO) particle of semi-conducting materials such as.
The particle, particularly silicon particle of the semi-conducting material can first pass through impurity dopant in advance and adulterate and thus have
Preferred electric conductivity.
The particle, particularly silicon particle of semi-conducting material at this time can contain at least one among 13 races and 15 race's elements
Kind element is as dopant.That is, dopant can be p-type may be N-shaped, can contain for example selected from boron (B), aluminium (Al),
Gallium (Ga), indium (In), titanium (Ti), iron (Fe), phosphorus (P), arsenic (As), antimony (Sb) or dopant, such as boron in combination thereof
Or the dopant of phosphorus.
Particularly, when silicon particle contains boron as dopant, boron provides the preferred electric conductivity for silicon particle, separately
On the one hand, in ion implanting step, boron is preferred in terms of being difficult to be moved to semiconductor substrate from silicon particle.
The concentration of dopant in semiconductor grain, particularly silicon particle can be 1018A atom/cm3Above, 1019It is a
Atom/cm3Above or 1020A atom/cm3More than.
In the step of semiconductor layer or base material are heated to high temperature and carry out ion implanting, led in order to prevent by metal impurities
The semiconductor layer or base material polluted dyes of cause, can use the concentration for the metal impurities for including in semiconductor grain for each metal member
It is 100ppb or less, 50ppb or less, 20ppb or 10ppb semiconductor grains below for element.Here, semiconductor is packet
When containing compound semiconductor of the metal as inscape, " metal impurities " refer to the gold other than constituting the metal of semiconductor
Belong to.
The particle used in the present invention can be used in the range of can form ion implanting mask with any concentration.
For example, the particle used in the present invention relative to the ratio that photosensitive polymer combination is 1 weight of weight % ~ 90 % preferably to make
With.It, can be there is no the photosensitive of photosensitive polymer combination by making a concentration of 90 weight % concentration below of particle
The pattern that photosensitive polymer combination film is carried out in the case of significant decrease is formed.In addition, the concentration by making conductive particle
Performance, therefore energy are played as ion implantation mask layer by calcining photosensitive polymer combination film for 1 weight % or more
Enough form the ion implanting mask of sufficient film thickness.
The particle used in the present invention is preferably by particle obtained from laser thermal decomposition method.Divided using laser heat is passed through
Obtained from solution when silicon particle, the particle for example described in Japanese Unexamined Patent Application Publication 2010-514585 bulletins can be used.
As the feature of the silicon particle as obtained from laser thermal decomposition method, the circularity that can enumerate primary particle is high.
Specifically, circularity can be 0.80 or more, 0.90 or more, 0.93 or more, 0.95 or more, 0.97 or more, 0.98 or more or
0.99 or more.Circularity can be by by using scanning electron microscope (SEM), transmission electron microscope (TEM) etc.
It observes and shoots obtained image, the perimeter (l) of projected area (S) and particle of particle are measured by image processing software etc.,
Calculate (4 π S)/l2, so as to find out.At this point it is possible in the form of the average value of 100 or more particle groups, circularity is found out.
In addition, the feature as the silicon particle as obtained from laser thermal decomposition method, it is crystal that can enumerate inside particle
State and particle surface portion are noncrystalline state this point.Thus, it is possible to special to using the various articles of particle to assign
Physical property.In the present invention, it is crystal state using particle inside that can also be suitble to and particle surface portion is noncrystalline state
Silicon particle.
＜ solvents ＞
The photosensitive polymer combination of the present invention can also contain solvent.The type of solvent is not particularly limited, and preferably selecting can
With the solvent of particle that dissolves the ingredient for including in photosensitive polymer combination and can use in the evenly dispersed present invention.
Boiling point under the atmospheric pressure of the solvent contained in the photosensitive polymer combination of the present invention is preferably 110 DEG C ~ 250
℃.By selecting boiling point for 110 DEG C or more of solvent, evaporated with speed appropriate in the film of photosensitive polymer combination film
Solvent can obtain uniform film.In addition, by selecting boiling point for 250 DEG C of solvents below, in photosensitive polymer combination
After the film of film, remaining solvent in the film of resin combination that can desensitize, therefore can inhibit because calcining when film
The reduction of crackle, surface caused by contraction.
＜ binders ＞
The present invention photosensitive polymer combination in order to be bonded to one another particle in the calcining step of photosensitive polymer combination,
Stable ion implanting mask is formed, binder can be contained.What is used in photosensitive polymer combination as the present invention is viscous
Agent is tied, it can be cited for example that polysiloxane compound, rotation oxygenerating silicon (spin on glass) etc..
《Semiconductor device manufacturing method》
Manufacture semiconductor equipment the method for the present invention includes following steps：
In the step of forming the pattern of film of photosensitive polymer combination of the invention on semiconductor layer or base material；
The step of calcining the pattern of the film of photosensitive polymer combination to form ion implanting mask；
The step of ion being injected by the pattern openings portion of ion implanting mask to semiconductor layer or base material；With
The step of removing ion implanting mask.
Here, may include the step of forming the pattern of film of photosensitive polymer combination on semiconductor layer or base material：
The film of the photosensitive polymer combination of the present invention is formed on a semiconductor substrate, and the film of the photosensitive polymer combination is carried out
Pattern forms exposed and developed.
It is described below referring to Fig.1 for the example of the method for the present invention of manufacture semiconductor equipment.
First, as shown in Fig. 1 (a), the SiC base materials (2) with SiC epitaxial films (1) are provided, and such as Fig. 1
(b) film (11) of photosensitive polymer combination shown in like that, is formed by any means on SiC base materials.
Thereafter, photosensitive polymer combination there is light of sensitivity etc. to carry out pattern shape to photosensitive polymer combination film
It is impregnated in developer solution etc. at exposure, and by the SiC base materials of the film with photosensitive polymer combination, pattern is passed through in thus removal
Deliquescent position among the film of photosensitive polymer combination obtained from formation step of exposure.Accordingly, as shown in Fig. 1 (c) that
Sample forms the pattern of the film of the photosensitive polymer combination with mask pattern opening portion (12) on SiC base materials (2).
Thereafter, as shown in Fig. 1 (d), the SiC base materials of the film of photosensitive polymer combination will be formed in photonasty tree
The organic principle that includes in oil/fat composition is calcined at a temperature of decomposing, it is hereby achieved that ion implanting is with mask (13).
Thereafter, as shown in Fig. 1 (e), using ion implantation apparatus, pass through the ion implanting mask artwork of mask (13)
Case opening portion (12) carries out ion implanting with the beam (7) of dopant ion to the surface of SiC base materials (2), and ion note is consequently formed
Enter region (6).At this point, will ion implanting semiconductor layer or base material be heated to 200 DEG C or more of temperature, so as to carry out
The step of ion implanting.
Thereafter, as shown in Fig. 1 (f), by be impregnated in be capable of dissolving ion injection mask (13) liquid it is medium
Means can remove it.
＜ semiconductor layers or base material ＞
As semiconductor layer or base material, the arbitrary semiconductor layer or base material for being intended to diffusing, doping agent can be used.
Therefore, as semiconductor layer or base material, can enumerate silicon (Si), germanium (Ge), diamond (C), silicon carbide (SiC),
SiGe (SiGe), gallium nitride (GaN), indium phosphide (InP), GaAs (GaAs), cadmium sulfide (CdS), zinc selenide (ZnSe), oxidation
Zinc (ZnO), particularly silicon carbide (SiC) etc., but not limited to this.
In addition, semiconductor layer or base material can be made of simple layer, it can also be by 2 of the semiconductor layer comprising 1 or more
Kind or more layer constitute laminated body.Such laminated body can be had on the semiconductor single-crystal substrates such as SiC single crystal base material
The semiconductor multilayer of the SiC epitaxial film homepitaxy growing films grown for the purpose of obtaining desired semiconductor equipment characteristic
Body.
It is 10 that semiconductor layer or base material, which can be impurity dopant,16A atom/cm3Semiconductor layer or base material below,
It can be in advance with impurity dopant to be more than 1016A atom/cm3Concentration adulterated.
On semiconductor layer or base material, the Wiring pattern of metal film, metal can be pre-formed.
The forming step ＞ of the pattern of the film of ＜ photosensitive polymer combinations
In the method for the present invention for manufacturing semiconductor equipment, the photoresist group of the present invention is formed on semiconductor layer or base material
Close the pattern of the film of object.
The step may include：The film of the photosensitive polymer combination of the present invention is formed on a semiconductor substrate, and right
The film progress pattern of photosensitive polymer combination forms exposed and developed.
The film for forming the photosensitive polymer combination of the present invention on a semiconductor substrate can be by can be in semiconductor layer
Or any means of the film of photosensitive polymer combination are formed on base material and are carried out.As such means, it can be cited for example that
The photosensitive polymer combination film made on another base material in advance is transferred to half by spin-coating method, slot coated method, spray coating method
Laminating method etc. on conductor substrate, but any means without being limited thereto can be selected.
When in photosensitive polymer combination including solvent, after the formation of the film of photosensitive polymer combination, it can carry out
It toasts and removes solvent.The means of heating removal as solvent, can use the arbitrary energy such as baking oven, heating plate, infrared ray
The method enough heated.
(film thickness of photosensitive polymer combination film)
The film thickness of photosensitive polymer combination film can select arbitrary thickness.Film thickness is according to the group of photosensitive polymer combination
At, application conditions, coating method etc. and it is different, for example, can be coated with so that the film thickness of the film of photosensitive polymer combination reaches
To 0.1 μm ~ 100 μm.
After the pattern of the film of photosensitive polymer combination is formed, calcined, from the mask layer as ion implanting into
From the perspective of row utilizes, it is preferably set to sufficient film thickness for the mask layer as ion implanting.It may be thus possible, for example, to consider
When to ion implanting, semiconductor substrate temperature, the accelerating potential of ion, dopant ion type etc. invade ion implanting
The element for entering length selects the film thickness of the film of photosensitive polymer combination, so that gained ion implanting mask is with filling
The ion divided prevents the film thickness of ability.
(pattern forms exposure)
Photosensitive polymer combination film can carry out pattern by any means corresponding with resist and form exposure.
Exposure, which refers to irradiation photosensitive polymer combination, has photosensitive activity chemistry ray, it can be cited for example that irradiation can
Light-exposed ray, ultraviolet light, electron ray, X-ray etc..From the viewpoint of the light source generally to use, such as it is preferable to use energy
The ultra high pressure mercury lamp source of visible light rays, ultraviolet light is enough irradiated, preferably (wavelength is for j lines (wavelength 313nm), i lines
365nm), h lines (wavelength 405nm) or g lines (wavelength 436nm).
Then, as needed, following development prebake conditions can be carried out.By carrying out development prebake conditions, can expect to improve
The permission amplitude and other effects of resolution ratio, increase development conditions when development.As baking temperature at this time, preferably 50 ~ 180
DEG C, more preferably 60 ~ 150 DEG C.Baking time is preferably 10 seconds ~ a few hours.As long as in above range, then react well into
Row, has the advantages that developing time can be made short.
(development)
Then, the development after exposure is formed by pattern, the pattern of photosensitive polymer combination can be obtained.For example, if
The film for the photosensitive polymer combination that pattern is formed after exposure is impregnated in developer solution, then photosensitive polymer combination has minus
Removed when photonasty non-exposed position, in addition photosensitive polymer combination have eurymeric photonasty when remove exposed portion
Position, the pattern for thus allowing for the film of photosensitive polymer combination are formed.
Developer solution can select arbitrary developer solution according to the composition of photosensitive polymer combination.It can it is preferable to use show
Going out the developer solution of fluidity of alkalinity, it is preferable to use such as tetramethylammonium hydroxide, potassium hydroxide, sodium hydroxides.
From environment aspect, compared with the alkaline developer of organic system, it is expected that being developed with aqueous alkali.
In addition, in order to improve the dissolving of pattern forming part and the dispersibility of conductive particle, developer solution can include molten
Agent.It is preferable to use isopropanol, acetone, propylene glycol 1- monomethyl ether 2- acetic acid esters etc. for example as the solvent at this point.
In addition, developer solution in order to improve the dissolving of pattern forming part and the dispersibility of conductive particle, can include table
Face activating agent.
Development treatment can be by being directly coated with above-mentioned developer solution on film after exposure, be made mist by above-mentioned developer solution
Radiated, the film immersion by the film immersion after exposure in above-mentioned developer solution, after it will expose it is same in above-mentioned developer solution
When apply the methods of ultrasound to carry out.
After development treatment, preferably by rinse liquid, the relief pattern formed by development is washed.As rinse
Liquid, it is preferable to use water when developer solution is using aqueous alkali.Furthermore, it is possible to by the alcohols such as ethyl alcohol, isopropanol, propylene glycol list
Acid such as the esters such as methylether acetate, carbonic acid gas, hydrochloric acid, acetic acid etc. make an addition to progress rinse processing in water.
When carrying out rinse with organic solvent, it is preferable to use with the good methanol of compatibility of developer solution, ethyl alcohol, isopropanol,
Ethyl lactate, ethyl pyruvate, propylene glycol monomethyl ether, 3- methoxy methyl propionates, 3- ethoxyl ethyl propionates, 2-
Heptanone, ethyl acetate etc..
When photosensitive polymer combination has the photonasty of eurymeric, as needed, it can not fade across mask
Exposure.By carrying out colour fading exposure, it can expect to improve the resolution ratio after calcining, the pattern form after calcining can be controlled, carried
The transparency and other effects after height calcining.As fade expose in the activity chemistry ray that uses, have ultraviolet light, visible light rays,
Electron ray, X-ray etc., it is preferable to use j lines (wavelength 313nm), i lines (wavelength 365nm), the h lines of mercury lamp in of the invention
(wavelength 405nm) or g lines (wavelength 436nm).
Then, as needed, intermediate baking can be carried out.By carrying out intermediate baking, can expect after improving calcining
Resolution ratio can control the pattern form and other effects after calcining.As baking temperature at this time, preferably 60 ~ 250 DEG C, more excellent
It is selected as 70 ~ 220 DEG C.Baking time is preferably 10 seconds ~ a few hours.
The forming step ＞ of ＜ ion implanting masks
In the method for the present invention, then, the pattern of the film of photosensitive polymer combination is calcined to form ion implanting
Use mask.
It can be carried out by being heated the film after development at a temperature of 200 ~ 1000 DEG C.The heat treatment can
With under air atmosphere or nitrogen etc. does not carry out under active gases atmosphere.In addition, the heat treatment heat up preferably in stages or
It heats up to continuity, carries out 5 minutes ~ 5 hours.It is respectively carried out 30 minutes at 130 DEG C, 200 DEG C and 350 DEG C for example, can enumerate
Heat treatment or follower's room temperature are to 400 DEG C of consuming the methods of 2 hours ramped thermals.
＜ ion implanting steps ＞
In the method for the present invention, then, by the pattern openings portion of ion implanting mask, to semiconductor layer or base material inject from
Son.
Ion implanting is preferably applied to include to ion implanting temperature as in 200 ~ 1000 DEG C of SiC layer or base material with mask
Carry out the manufacturing process of the semiconductor equipment of ion implanting.Ion implanting temperature is preferably 200 ~ 1000 DEG C, more preferably 200 ~
800 DEG C, further preferably 250 ~ 700 DEG C, particularly preferably 300 DEG C ~ 500 DEG C.
When semiconductor layer or base material are SiC layer or base material, if ion implanting temperature is less than 200 DEG C, implanted layer is formed
Continuous noncrystalline, though carry out high annealing if can not carry out it is good recrystallize, conductive formation can not be formed by existing
Worry.In addition, causing thermal oxide, the step coalescence of SiC, therefore become if ion implanting temperature is higher than 1000 DEG C at this time
It needs to remove these parts after ion implantation.
By the present invention photosensitive polymer combination be applied to ion implanting mask purposes when resolution ratio be preferably 7 μm with
Under, more preferably 5 μm or less, be more preferably 3 μm or less.
＜ ion implanting mask removal steps ＞
Ion implanting mask removes after the ion implant step.As minimizing technology, the hydrogen using hydrofluoric acid, buffering can be enumerated
Dry processes such as wet process, the corona treatment of fluoric acid, hydrofluoric acid nitric acid or TMAH etc. etc., but not limited to this.From it is low at
From the perspective of this, preferably wet process.
Embodiment
《Embodiment 1 ~ 2 and comparative example 1 ~ 3》
In embodiment 1 ~ 2 below and comparative example 1 ~ 3, photosensitive polymer combination is prepared, coated film is formed on SiC base materials
Afterwards, the pattern for carrying out ultraviolet light forms exposure, development, calcining, and the pattern for carrying out thus obtained ion implanting mask is formed.
In addition, be directed to these embodiments and comparative example, for can carry out pattern formation, forged burn after have pattern-free remain and ion
Whether there is or not the problem caused by electrification when injection, evaluated.
1 ＞ of ＜ embodiments
(boron (B) adulterates the making of silicon particle)
Nano silicon particles thermally decompose (LP using single silane gas as raw material, by using the laser of carbon dioxide laser：Laser
Pyrolysis) method makes.At this point, together with single silane gas, diborane (B is imported2H6) gas, obtain boron-doping silicon
Grain.The grain size of the particle is 20nm.
The doping concentration of gained boron-doping silicon particle is 1 × 1021A atom/cm3.In addition, passing through inductively coupled plasma
When constitution spectrometer (ICP-MS) measures the metals content impurity of gained boron-doping silicon particle, the content of Fe is 15ppb, the content of Cu
Content for 18ppb, Ni is 10ppb, and the content of Cr is 21ppb, and the content of Co is 13ppb, and the content of Na is 20ppb, Ca's
Content is 10ppb.
(preparation of the solution of boron doped silicon particle)
By the 5 weight % of nano silicon particles for mixing 95 weight % of isopropanol and being made by above-mentioned means, boron doped silicon is prepared
The solution of particle.
(preparation of the photosensitive polymer combination containing nano silicon particles and negative photosensitive resin)
Mix negative photoresist (CTP-100T, メ Le Network パ フ ォ ー マ ス Application ス マ テ リ ア Le ズ マ ニ ュ Off ァ Network チ ャ
リ Application グ contracts commercial firm system), the solution of above-mentioned boron doped silicon particle, prepare and contain nano silicon particles and negative photosensitive resin
Photosensitive polymer combination.At this point, photosensitive polymer combination is prepared, so that mixed photosensitive polymer combination
Among solid content, boron-doping silicon nano particle accounts for 20 weight %.
(formation of photosensitive polymer combination film)
On SiC base materials, by the above-mentioned photosensitive polymer combination containing nano silicon particles and negative photosensitive resin with film thickness
Reach about 2 μm of rotary speed and carry out spin coating, drying in 90 seconds is carried out in 100 DEG C of heating plate, thus obtains photonasty tree
Oil/fat composition film.
(pattern is formed)
To above-mentioned photosensitive polymer combination film, exposure machine is formed using pattern, by optical mask pattern irradiating ultraviolet light, thus
It carries out pattern and forms exposure.As photomask, pattern is carried out using the photomask of line and space with 10 μm and forms exposure.
After the photosensitive polymer combination film that pattern is formed after exposure is heated 90 seconds in 100 DEG C of heating plate, in developer solution (AZ-
300MIF, メ Le Network パ フ ォ ー マ ス Application ス マ テ リ ア Le ズ マ ニ ュ Off ァ Network チ ャ リ Application グ contracts commercial firm system) in leaching
Stain 60 seconds carries out pattern development.After development, after base material of the flowing pure water with photosensitive polymer combination film, make base
Material is dried, and the pattern of photosensitive polymer combination film is formed on SiC base materials.
(observation for utilizing light microscope)
To pattern, the photosensitive polymer combination film after being formed using optical microphotograph sem observation, confirmation can be formed 10 μm of lines and
The pattern in space.
(calcining)
The pattern of above-mentioned photosensitive polymer combination film is calcined in an oven, under air, at 800 DEG C by 1 hour, by
This forms ion implanting mask on SiC base materials.The film thickness of ion implanting mask layer after calcining is 0.5 μm.
(observation for utilizing light microscope)
Using light microscope, confirming has the formation of pattern-free in the ion implanting mask after calcining.
(ion implanting)
Under the following conditions, by the mask pattern opening portion of the ion implanting mask after calcining, ion is carried out to SiC base materials
Injection：
Ionic species：Al、
Energy fluence：40keV、
Implantation temperature：400℃、
Dosage：1×1014A ion/cm2
After Al ion implantings, base material is impregnated in the hydrofluoric acid of buffering and the mixed liquor of the concentrated sulfuric acid, thus removes ion implanting
Use mask.Thereafter, it using Secondary Ion Mass Spectrometry (SIMS) device, measures the depth from the SiC substrate surfaces of Al concentration and relies on
Property.
SIMS measures among SiC base materials to having carried out ion implanting, when Al ion implantings ion implanting mask opening
The SiC substrate surfaces that the region covered with mask layer is ion implanted when portion region and Al ion implantings carry out.In Fig. 3, show
Pass through the Al concentration distributions of the SIMS depth directions measured.
As shown in Figure 3, when Al ion implantings in the Al concentration distributions (21) in the opening portion region of ion implanting mask,
It is observed with 1.5 × 10 near depth 50nm19A atom/cm3Peak profile.On the other hand, in Al ion implantings
It is ion implanted in the Al concentration distributions (22) in the region covered with mask layer, even if on the surface for detecting highest Al concentration
Place, Al concentration are also 5.5 × 1017A atom/cm3, the Al in the opening portion region of ion implanting mask when being Al ion implantings
1/30th or so of Cmax in concentration distribution (21).In addition, range detection from surface near 100nm to 1014~
1017A atom/cm3Al ions be judged as caused by the influence of the surface adsorbate in being measured by SIMS, therefore in ion
It is ion implanted when injection in the region covered with mask layer, it can be determined that for the Al ions injected into SiC are not detected.Cause
This, is ion implanted in Al ion implantings in the region covered with mask layer, it can be determined that not inject Al into SiC base materials
Ion.
According to above SIMS measure as a result, in Al ion implantings the opening portion region of ion implanting mask
In SiC substrate surfaces, Al ions are filled with, on the other hand, the region covered with mask are ion implanted in Al ion implantings
SiC substrate surfaces in, unimplanted Al ions, it is possible to understand that the ion implanting mask layer in the present embodiment is in ion implanting
Has the effect of masking injection ion.
2 ＞ of ＜ embodiments
As photosensitive polymer combination, mixing negative photoresist (CTP-100T, メ Le Network パ フ ォ ー マ ス Application ス マ are substituted
テ リ ア Le ズ マ ニ ュ Off ァ Network チ ャ リ Application グ contracts commercial firm system), the solution of above-mentioned boron doped silicon particle, and mix minus
Photoresist (CTP-100T, メ Le Network パ フ ォ ー マ ス Application ス マ テ リ ア Le ズ マ ニ ュ Off ァ Network チ ャ リ Application グ contract meetings
Society's system), the solution of above-mentioned boron doped silicon particle, rotation oxygenerating silicon (12000-T, Tokyo Applied Chemistry Industrial Co., Ltd.'s system), remove
Except this, in the same manner as example 1, mask layer is formed on SiC base materials.At this point, photosensitive polymer combination is prepared,
So that among the solid content of mixed photosensitive polymer combination, boron-doping silicon nano particle accounts for 10 weight %, rotation system
The solid constituent for including in silica solution accounts for 10 weight %.
1 ＞ of ＜ comparative examples
As photosensitive polymer combination, mixing negative photoresist (CTP-100T, メ Le Network パ フ ォ ー マ ス Application ス マ are substituted
テ リ ア Le ズ マ ニ ュ Off ァ Network チ ャ リ Application グ contracts commercial firm system), the solution of above-mentioned boron doped silicon particle, mix minus light
Photoresist (CTP-100T, メ Le Network パ フ ォ ー マ ス Application ス マ テ リ ア Le ズ マ ニ ュ Off ァ Network チ ャ リ Application グ contracts commercial firm
System), SiO2Nano particle disperse solution S IRPMA30WT%-E9 (CIK Na ノ テ ッ Network Co. Ltd. system), in addition to this, with
1 identical mode of embodiment, mask layer is formed on SiC base materials.At this point, photosensitive polymer combination is prepared, so that mixing
Among the solid content of photosensitive polymer combination afterwards, SiO2Include in nano particle dispersion solution S IRPMA30WT%-E9
Solid constituent account for 20 weight %.
2 ＞ of ＜ comparative examples
As photosensitive polymer combination, mixing negative photoresist (CTP-100T, メ Le Network パ フ ォ ー マ ス Application ス マ are substituted
テ リ ア Le ズ マ ニ ュ Off ァ Network チ ャ リ Application グ contracts commercial firm system), the solution of above-mentioned boron doped silicon particle, mix minus light
Photoresist (CTP-100T, メ Le Network パ フ ォ ー マ ス Application ス マ テ リ ア Le ズ マ ニ ュ Off ァ Network チ ャ リ Application グ contracts commercial firm
System), rotation oxygenerating silicon (12000-T, Tokyo should change system), in addition to this, in the same manner as example 1, on SiC base materials
Form mask layer.At this point, photosensitive polymer combination is prepared, so that the solid constituent of mixed photosensitive polymer combination
Among amount, revolves the solid constituent for including in oxygenerating silicon and account for 20 weight %.
3 ＞ of ＜ comparative examples
As photosensitive polymer combination, substitute using mixing negative photoresist (CTP-100T, メ Le Network パ フ ォ ー マ ス Application
ス マ テ リ ア Le ズ マ ニ ュ Off ァ Network チ ャ リ Application グ contracts commercial firm system), the solution of above-mentioned boron doped silicon particle and obtain
Solution, use negative photoresist (CTP-100T, メ Le Network パ フ ォ ー マ ス Application ス マ テ リ ア Le ズ マ ニ ュ Off ァ Network
チ ャ リ Application グ contracts commercial firm system), in addition to this, in the same manner as example 1, implementation forms mask layer on SiC base materials
The step of.
It is summarized in following tables 1 for the experiment condition and result of embodiment 1 ~ 2 and comparative example 1 ~ 3.
[table 1]
＜ evaluation results ＞
It is appreciated that when using silicon (Si) particle as additive, is passed through according to the result of embodiment 1 ~ 2 and comparative example 1 ~ 3
Forged after the pattern of photosensitive polymer combination is formed is burnt, and the figure for the residue for having electric conductivity can be formed on base material
On the other hand case adds the silica (SiO without electric conductivity as additive2) particle and rotation oxygenerating silicon when, nothing
Method forms the pattern for the residue for having electric conductivity on base material.
In addition, being appreciated that in addition to the silicon nanometer conductive as additive according to the result of embodiment 1 ~ 2
Except grain, the rotation oxygenerating silicon as binder, the heat after being formed from there through the pattern of photosensitive polymer combination are also mixed
Calcining, can also form the pattern for the residue for having electric conductivity on base material.
《Embodiment 3 and comparative example 4》
In embodiment 3 below and comparative example 4, photosensitive polymer combination is prepared, in the base with thermal oxidation silicon film 1000nm
After forming coated film on material, the pattern for carrying out ultraviolet light forms exposure, development, calcining, and the pattern for being thus masked layer is formed.
In addition, in these embodiments and comparative example, it is masked the measurement of the sheet resistance of layer.
3 ＞ of ＜ embodiments
It as base material, substitutes and uses SiC base materials, and use the silicon wafer with thermal oxidation silicon film 1000nm, formed and exposed in pattern
In addition to this light time in the same manner as example 1, is masked the pattern shape of layer to base material whole face exposure ultraviolet light
At.Be masked layer pattern formed after, by shadowmask, using vacuum vapour deposition, formed on the pattern of mask layer with
Measure the aluminium electrode for the purpose of the resistivity of the pattern of mask layer.
As the pattern of the aluminium electrode for the purpose of measuring resistivity, using with the size with 200 μm of 1000 μ m
The electrode pattern that 1000 μm of side of the electrode of one group of rectangle configures in such a way that 200 μm of interval is opposite each other.
Thereafter, measuring current potential when applying the constant current of 1 μ A between the aluminium electrode of vapor deposition aluminium electrode reduces, and thus finds out
The sheet resistance of mask layer as a result, be 90G Ω/.
4 ＞ of ＜ comparative examples
The solution of boron doped silicon particle is substituted, and uses rotation oxygenerating silicon (12000-T, Tokyo Applied Chemistry Industrial Co., Ltd.
System), in addition to this, in a manner of same as Example 3, formed on silicon substrate after having figuratum ion implanting mask,
Carry out the measurement of the sheet resistance of the ion implanting mask.Accordingly, it can not be measured to the electric current of the determination limit of device or more, covered
The sheet resistance of mold layer is speculated as 2.0 × 108G Ω/ or more.
Reference sign
1 SiC epitaxial films
2 SiC base materials
3 SiO2Film
4 photonasty resists
6 ion implanted regions
The beam of 7 dopant ions
11 photosensitive polymer combination films
12 mask pattern opening portions
13 mask patterns
The Al concentration distributions in the opening portion region of ion implanting mask layer when 21 Al ion implantings
The Al concentration distributions in the region covered with mask layer are ion implanted when 22 Al ion implantings
Claims (15)
1. photosensitive polymer combination, the particle containing photoresist and conductive material and/or semi-conducting material.
2. composition according to claim 1, wherein the particle is of metal, semimetal or combination thereof
Grain.
3. composition according to claim 2, wherein the particle is silicon particle.
4. composition according to claim 3, wherein the silicon particle contains at least one among 13 races and 15 race's elements
Kind element is as dopant.
5. composition according to claim 4, wherein the silicon particle contains boron or phosphorus as dopant.
6. composition according to claim 4 or 5, wherein a concentration of 10 of the dopant in the silicon particle18It is a
Atom/cm3More than.
7. the composition according to any one of claim 3 ~ 6, wherein metals content impurity is for each metallic element
For 100ppb or less.
8. the composition according to any one of claim 1 ~ 7, wherein the average grain diameter of the particle is 1 ~ 500nm.
9. composition according to claim 8, wherein the average grain diameter of the particle is 1 ~ 100nm.
10. according to composition any one of claims 1 to 9, wherein the film of the photosensitive polymer combination exists
When carrying out 800 DEG C of calcining in 1 hour under air and obtaining the mask layer that film thickness is 0.5 μm, the sheet resistance of the mask layer is 1012
Ω/ or less.
11. the composition according to any one of claim 1 ~ 10, also contains silicone compounds.
12. the manufacturing method of semiconductor equipment comprising：
The figure of the film of the photosensitive polymer combination described in any one of claim 1 ~ 11 is formed on semiconductor layer or base material
The step of case；
The step of calcining the pattern of the film of the photosensitive polymer combination to form ion implanting mask；
The step of ion being injected by the pattern openings portion of the ion implanting mask to the semiconductor layer or base material；With
The step of removing the ion implanting mask.
13. according to the method for claim 12, wherein form the photosensitive resin composition on semiconductor layer or base material
The step of pattern of the film of object includes：The photoresist described in any one of claim 1 ~ 11 is formed on a semiconductor substrate
The film of composition, and the film of photosensitive polymer combination progress pattern is formed exposed and developed.
14. method according to claim 12 or 13, wherein the semiconductor layer or base material are SiC layer or base material.
15. the method according to any one of claim 12 ~ 14, wherein the semiconductor layer in ion implanting step
Or the temperature of base material is 200 DEG C or more.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015257681A JP6715597B2 (en) | 2015-12-29 | 2015-12-29 | Photosensitive resin composition and semiconductor device manufacturing method |
| JP2015-257681 | 2015-12-29 | ||
| PCT/JP2016/086611 WO2017115633A1 (en) | 2015-12-29 | 2016-12-08 | Photosensitive resin composition and method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108475014A true CN108475014A (en) | 2018-08-31 |
| CN108475014B CN108475014B (en) | 2021-06-01 |
Family
ID=59225050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680076774.XA Active CN108475014B (en) | 2015-12-29 | 2016-12-08 | Photosensitive resin composition and method for manufacturing semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6715597B2 (en) |
| KR (1) | KR102651216B1 (en) |
| CN (1) | CN108475014B (en) |
| TW (1) | TW201736954A (en) |
| WO (1) | WO2017115633A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112689862A (en) * | 2018-09-06 | 2021-04-20 | 株式会社钟化 | Method for manufacturing partition wall, image display device, and method for manufacturing image display device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10937869B2 (en) * | 2018-09-28 | 2021-03-02 | General Electric Company | Systems and methods of masking during high-energy implantation when fabricating wide band gap semiconductor devices |
| JP7056532B2 (en) * | 2018-11-29 | 2022-04-19 | 豊田合成株式会社 | Method for manufacturing p-type III nitride semiconductor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909191A (en) * | 2005-08-02 | 2007-02-07 | 本田技研工业株式会社 | Ion implantation mask, and a sic semiconductor device using the mask, and method for manufacturing same |
| JP2011007865A (en) * | 2009-06-23 | 2011-01-13 | Jsr Corp | Photosensitive paste composition and pattern forming method |
| CN102147570A (en) * | 2009-12-18 | 2011-08-10 | Jsr株式会社 | Radioactive ray sensitivity composition, solidified film and forming method thereof |
| CN104011596A (en) * | 2011-12-26 | 2014-08-27 | 东丽株式会社 | Photosensitive resin composition and method for producing semiconductor device |
| WO2015146749A1 (en) * | 2014-03-26 | 2015-10-01 | 東レ株式会社 | Method for manufacturing semiconductor device and semiconductor device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06295700A (en) | 1993-04-12 | 1994-10-21 | Nippon Telegr & Teleph Corp <Ntt> | Electrification preventive method in ion implantation device |
| JPH0758053A (en) | 1993-08-12 | 1995-03-03 | Sony Corp | Anti-static countermeasure during ion implantation |
| JP3914386B2 (en) * | 2000-12-28 | 2007-05-16 | 株式会社ルネサステクノロジ | Photomask, manufacturing method thereof, pattern forming method, and manufacturing method of semiconductor device |
| JP4042893B2 (en) * | 2001-12-11 | 2008-02-06 | 財団法人新産業創造研究機構 | Processing method of Si semiconductor microstructure by ion beam implantation lithography of inorganic multilayer resist |
| JP4456355B2 (en) * | 2003-11-13 | 2010-04-28 | 大日本印刷株式会社 | Pattern forming body and manufacturing method thereof |
| JP4942134B2 (en) | 2005-05-20 | 2012-05-30 | 日産自動車株式会社 | Method for manufacturing silicon carbide semiconductor device |
| JP5014734B2 (en) | 2006-10-25 | 2012-08-29 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| JP5925721B2 (en) * | 2012-05-08 | 2016-05-25 | 信越化学工業株式会社 | Organic film material, organic film forming method and pattern forming method using the same |
| JP2015161868A (en) * | 2014-02-28 | 2015-09-07 | 東洋インキＳｃホールディングス株式会社 | Photosensitive resin and photosensitive resin composition |
-
2015
- 2015-12-29 JP JP2015257681A patent/JP6715597B2/en active Active
-
2016
- 2016-12-08 WO PCT/JP2016/086611 patent/WO2017115633A1/en active Application Filing
- 2016-12-08 KR KR1020187016547A patent/KR102651216B1/en active IP Right Grant
- 2016-12-08 CN CN201680076774.XA patent/CN108475014B/en active Active
- 2016-12-20 TW TW105142282A patent/TW201736954A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1909191A (en) * | 2005-08-02 | 2007-02-07 | 本田技研工业株式会社 | Ion implantation mask, and a sic semiconductor device using the mask, and method for manufacturing same |
| JP2011007865A (en) * | 2009-06-23 | 2011-01-13 | Jsr Corp | Photosensitive paste composition and pattern forming method |
| CN102147570A (en) * | 2009-12-18 | 2011-08-10 | Jsr株式会社 | Radioactive ray sensitivity composition, solidified film and forming method thereof |
| CN104011596A (en) * | 2011-12-26 | 2014-08-27 | 东丽株式会社 | Photosensitive resin composition and method for producing semiconductor device |
| WO2015146749A1 (en) * | 2014-03-26 | 2015-10-01 | 東レ株式会社 | Method for manufacturing semiconductor device and semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112689862A (en) * | 2018-09-06 | 2021-04-20 | 株式会社钟化 | Method for manufacturing partition wall, image display device, and method for manufacturing image display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108475014B (en) | 2021-06-01 |
| KR20180099658A (en) | 2018-09-05 |
| KR102651216B1 (en) | 2024-03-25 |
| TW201736954A (en) | 2017-10-16 |
| WO2017115633A1 (en) | 2017-07-06 |
| JP2017120349A (en) | 2017-07-06 |
| JP6715597B2 (en) | 2020-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Su et al. | Phase‐engineered PtSe2‐layered films by a plasma‐assisted selenization process toward all PtSe2‐based field effect transistor to highly sensitive, flexible, and wide‐spectrum photoresponse photodetectors | |
| TWI690766B (en) | Organometallic solution based high resolution patterning compositions and corresponding methods | |
| WO2012077797A1 (en) | Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device | |
| US8951895B2 (en) | Complementary doping methods and devices fabricated therefrom | |
| Wu et al. | Ligand engineering for improved all‐inorganic perovskite quantum dot‐MoS2 monolayer mixed dimensional van der Waals phototransistor | |
| JP2011503896A (en) | Method for manufacturing crystalline silicon solar cell using co-diffusion of boron and phosphorus | |
| O’Connell et al. | Chemical approaches for doping nanodevice architectures | |
| CN108475014A (en) | Photosensitive polymer combination and semiconductor device manufacturing method | |
| EP2833391A1 (en) | Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer | |
| US20150235864A1 (en) | Method for processing a layer and a method for manufacturing an electronic device | |
| Nam et al. | Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel‐Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis | |
| Li et al. | Tuning Transport and Photoelectric Performance of Monolayer MoS2 Device by E‐Beam Irradiation | |
| CN103011140B (en) | Method for preparing graphene/graphite pattern by using photoresist | |
| Perego et al. | Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants | |
| Bala et al. | Low‐Temperature Plasma‐Assisted Growth of Large‐Area MoS2 for Transparent Phototransistors | |
| Barri et al. | Engineering of the spin on dopant process on silicon on insulator substrate | |
| GB1602386A (en) | Method of manufacturing semiconductor devices | |
| Tiwale et al. | Solution‐Processed High‐Performance ZnO Nano‐FETs Fabricated with Direct‐Write Electron‐Beam‐Lithography‐Based Top‐Down Route | |
| Clericò et al. | Electron beam lithography and its use on 2D materials | |
| O’Connell et al. | Liquid-phase monolayer doping of InGaAs with Si-, S-, and Sn-containing organic molecular layers | |
| US20170309484A1 (en) | Carbon Vacancy Defect Reduction Method for SiC | |
| JP6842841B2 (en) | Ion implantation mask forming method and semiconductor device manufacturing method | |
| JP6842864B2 (en) | Dispersion for forming ion implantation mask and semiconductor device manufacturing method | |
| WO2017146110A1 (en) | Dispersion for forming ion implantation mask, method for forming ion implantation mask, and method for manufacturing semiconductor device | |
| KR20180118609A (en) | Dispersion for forming ion implantation mask, method for forming ion implantation mask, and method for manufacturing semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |