CN108461415A - Brushing method of cleaning and brushing decontaminating apparatus - Google Patents
Brushing method of cleaning and brushing decontaminating apparatus Download PDFInfo
- Publication number
- CN108461415A CN108461415A CN201710631541.8A CN201710631541A CN108461415A CN 108461415 A CN108461415 A CN 108461415A CN 201710631541 A CN201710631541 A CN 201710631541A CN 108461415 A CN108461415 A CN 108461415A
- Authority
- CN
- China
- Prior art keywords
- aforementioned
- brushing
- semiconductor substrate
- clean component
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001680 brushing effect Effects 0.000 title claims abstract description 97
- 238000004140 cleaning Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 230000002093 peripheral effect Effects 0.000 claims abstract description 46
- 239000003599 detergent Substances 0.000 claims abstract description 39
- 230000002411 adverse Effects 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims description 3
- 241000521257 Hydrops Species 0.000 abstract description 21
- 206010030113 Oedema Diseases 0.000 abstract description 21
- 230000007547 defect Effects 0.000 description 21
- 238000002474 experimental method Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000005406 washing Methods 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 241000478345 Afer Species 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000012372 quality testing Methods 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/20—Cleaning of moving articles, e.g. of moving webs or of objects on a conveyor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/04—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto specially adapted for plate glass, e.g. prior to manufacture of windshields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A kind of brushing method of cleaning of present invention offer and brushing decontaminating apparatus, inhibit the generation of hydrops caused by the adverse current by the adjoint detergent remover of the rotation of roller, inhibit the generation of the secondary pollution of front wafer surface.The present invention is a kind of brushing method of cleaning, by multiple rollers（2）Semiconductor substrate is kept on one side（W）Outer peripheral edge（Wc）Make its rotation on one side, also, makes to clean component（3）In the washable surface of semiconductor substrate（Wa）Upper sliding brushing, thus cleans aforementioned washable surface, wherein makes aforementioned clean component（3）In the central part of the washable surface of semiconductor substrate（O1）After sliding brushing, center portion from the foregoing（O1）, make aforementioned clean component（3）While maintaining the state of sliding brushing, it is moved to overhanging distance（d）, thus clean the washable surface of aforesaid semiconductor substrate, aforementioned overhanging distance（d）It is a part for aforementioned clean component from the outer peripheral edge of semiconductor substrate（Wc）Distance outstanding.
Description
Technical field
The present invention relates to brushing method of cleaning and brushing decontaminating apparatus.For example, the present invention relates to following brushing method of cleaning
And brushing decontaminating apparatus：Semiconductor substrate is kept by multiple rollers（Hereinafter referred to as chip）Outer peripheral edge, so that chip is revolved on one side
Turn, it is clean using component is cleaned on one side.
Background technology
Back and forth, before and after the various manufacturing processes of manufacture semiconductor substrate, into being about to be attached to chip just
The polluters such as the particle in face（Foreign matter）The brushing of removing is cleaned.
For example, by the CMP of the positive mirror ultrafinish of chip（Chemical mechanical grinding）After process, carries out following brushing and wash
Only：On one side to the front supply detergent remover of the chip of rotation, the brush as clean component is made to be slided in the front of chip on one side
Brushing is cleaned.
An example of the brushing method of cleaning and brushing decontaminating apparatus is in Japanese Unexamined Patent Publication 2010-283150 bulletins by table
Show.
Brushing decontaminating apparatus shown in the bulletin has substrate rotating part, front cleaning unit, periphery cleaning unit and detergent remover
Supply unit, aforesaid base plate rotating part, which adsorbs, clamps the back side of chip, and aforesaid base plate is made to rotate, and aforementioned front cleaning unit is by aforementioned base
The front of plate（Upper surface）Clean, aforementioned periphery cleaning unit cleans the peripheral part of aforesaid base plate, aforementioned detergent remover supply unit to
Aforesaid base plate supplies detergent remover.
In the brushing decontaminating apparatus, carries out brushing using front cleaning unit and periphery cleaning unit and clean.
In addition, in Japanese Unexamined Patent Publication 2002-66467 bulletins, indicates following brushing decontaminating apparatus, have substrate rotation
Transfer part, brushing washer, nozzle, aforesaid base plate rotating part adsorb the back side for clamping chip, so that aforesaid base plate is rotated, aforementioned brushing
Washer has 2, by the front of aforesaid base plate（Upper surface）It cleans, former nozzle supplies detergent remover to aforesaid base plate.
In the brushing decontaminating apparatus shown in the bulletin, carries out brushing using 2 brushing washers and clean.
In addition, being used in the semiconductor substrate of the manufacture of element in recent years（Chip）Not only in its front, overleaf
Also high wash degree is required.
But it is wiped shown in aforementioned Japanese Unexamined Patent Publication 2010-283150 bulletins, Japanese Unexamined Patent Publication 2002-66467 bulletins
Scrub in cleaning device, the absorption of the back side of chip clamped, make afer rotates, thus cannot by the front of chip and the back side simultaneously with
High wash degree is cleaned.
As solving the problems, such as this scheme, it is proposed that brushing shown in Japanese Unexamined Patent Publication 11-283951 bulletins cleans dress
It sets.
On the brushing decontaminating apparatus, multiple rollers that can be rotated are set and keep the outer peripheral edge of wafer W by these rollers.
Also, aforementioned wafer by roller come in the state of rotation, brush carries out brushing in the sliding on the front and back of aforementioned wafer
It cleans.
In the brushing decontaminating apparatus, chip can rotatably be kept by multiple rollers（It is not provided with the back of the body of chip
Adsorb the substrate rotating mechanism for clamping, making afer rotates in face）.
As a result, it is possible to make washer in the sliding brushing on the front and back of chip, the front of chip can be cleaned simultaneously
The back side and.
In addition, the upper surface of wafer W（Front）Clean detergent remover dripped simultaneously by the central part of the upper surface to wafer W
Washer sliding brushing is set to carry out.In addition, the lower surface of wafer W（The back side）Clean pass through the lower surface to wafer W（The back of the body
Face）It integrally sprays detergent remover and makes washer sliding brushing to carry out.
In the upper surface of aforementioned wafer W（Front）Clean in, the detergent remover to drip to the upper surface central part of wafer W is borrowed
The rotary force of wafer W is helped to be flowed from the central part of wafer W to the outer peripheral edge of wafer W, the outside from outer peripheral edge to wafer W is arranged
Go out.
But as shown in figure 11, in the brushing decontaminating apparatus 10 for being provided with roller 11, due to the rotation of roller 11, formed to
The flowing E of the central part direction flowing of wafer W.That is, the washing water containing particle etc. polluted is from the outer peripheral edge of wafer W to crystalline substance
The central part direction adverse current of piece W.
As a result, there are following possibility：The washing water containing particle etc. polluted is not outside by the outer peripheral edge from wafer W
Side is discharged, and generates the hydrops X of detergent remover in the positive outer peripheral edge portion of chip, becomes wanting for the positive secondary pollution of chip
Cause.
Invention content
The present invention makes to solve aforementioned technical problem, its purpose is to provide a kind of brushing method of cleaning and
Brushing decontaminating apparatus, the brushing method of cleaning and brushing decontaminating apparatus enter while being kept by multiple rollers and rotating chip
During capable brushing is cleaned, hydrops caused by the adverse current by the detergent remover of the rotation along with roller is removed, the positive of chip is inhibited
The generation of secondary pollution.
The brushing method of cleaning of the present invention made to achieve the goals above keeps semiconductor on one side by multiple rollers
The outer peripheral edge of substrate makes its rotation on one side, also, clean component is made to slide brushing on the washable surface of semiconductor substrate, thus makes
Aforementioned washable surface cleans, and aforementioned brushing method of cleaning is characterized in that, makes aforementioned clean component washing in semiconductor substrate
After the central part sliding brushing washed one's face, center portion, makes aforementioned clean component while maintaining the state of sliding brushing from the foregoing,
It is moved to overhanging distance, thus cleans the washable surface of aforesaid semiconductor substrate, aforementioned overhanging distance is aforementioned cleans
A part for component is from the outer peripheral edge of semiconductor substrate distance outstanding.
In the brushing method of cleaning of the present invention, aforementioned clean component is made to maintain the state of sliding brushing, while cleaning unit
Part is moved to overhanging distance, and aforementioned overhanging distance is that a part for clean component is outstanding from the outer peripheral edge of semiconductor substrate
Distance.Therefore, the hydrops of the detergent remover polluted is removed, and the washing water containing particle etc. polluted is by outside wafer W
Periphery is discharged outward.That is, inhibiting adverse current of the washing water from the outer peripheral edge of wafer W to central part direction, cleaning for chip is prevented
The secondary pollution in face.
In addition, aforementioned clean component is not components described below：Aforementioned clean component is set to maintain the same of the state of sliding brushing
When, the central part of washable surface is again returned to from overhanging distance, carries out so-called reciprocating movement.
Therefore, because sliding brushing and chip will not be transported to by clean component by being attached to the foreign matters such as the particle of clean component
Central portion side, the secondary pollution by being attached to washable surface caused by the foreign matter of clean component can be inhibited.
Here, outer peripheral edge of the detergent remover of adverse current away from aforementioned wafer into wafer face that will be generated from the rotation of aforementioned roller
Distance is expressed as t, the radius of aforementioned disk-shaped clean component is expressed as r, by a part of outstanding overhanging of clean component
Distance be expressed as d, at this point, preferably overhanging distance d be in 0<In the range of d≤r-t.
It is in 0 in overhanging distance d<In the case of in the range of d≤r-t, the hydrops of the detergent remover polluted is removed,
The washing water containing particle etc. polluted is discharged outward from the outer peripheral edge of wafer W, can realize further high cleaning
Change.
In addition, the average light point defects number of the washable surface of semiconductor substrate preferably cleaned to 0.2 ×（It is overhanging away from
From d, unit mm）+ 140 or less.
Moreover it is preferred that the part in aforementioned clean component is outstanding overhanging from the outer peripheral edge of semiconductor substrate
At distance, stop cleaning component movement of the center portion to the outer peripheral edge direction of semiconductor substrate from the foregoing, by the stipulated time
Afterwards, aforementioned clean component leaves from the washable surface of semiconductor substrate.
If it is more than r-t that aforementioned clean component, which maintains the state of sliding brushing and overhanging distance d, that has polluted cleans
The hydrops of liquid remains, and the washing water containing particle etc. polluted becomes difficult to be discharged outward from the outer peripheral edge of wafer W, because
This is preferably that aforementioned clean component leaves after sliding the stipulated time from the washable surface of semiconductor substrate.
Moreover it is preferred that the rotation of the direction of rotation and clean component of the chip rotated by the rotation of aforementioned roller
Direction is same direction, and the rotating speed of aforementioned clean component is at least 10 relative to the ratio of the rotating speed of aforementioned wafer.
Here, in the case where the direction of rotation of the chip of rotation and the direction of rotation of clean component are different directions, brush
Son rotates on the contrary with afer rotates, as a result, generation makes hydrops to chip inner circumferential advection（Advection）Velocity component, the row of hydrops
Fluidity can decline, therefore be not preferred.
In addition, if every 1 rotation for chip, brush rotate to be 10 rotations or more, then brush is whole in chip
It is slided on face, therefore good washing-off properties can be obtained.
On the other hand, for the rotation of chip every 1 time, in the case of rotating to be less than 10 rotations of brush, brush
Sliding becomes uneven relative to chip, therefore presence cannot obtain good washing-off properties, cannot remove the pollutants such as particle
Matter（Foreign matter）Possibility, be not preferred.
The brushing decontaminating apparatus of the present invention that is directed to realize above-mentioned purpose and make is used in above-mentioned brushing and washes
The brushing decontaminating apparatus of net method, which is characterized in that have roller, detergent remover feed mechanism, clean component driving portion, control unit,
Aforementioned roller has multiple, makes its rotation while keeping the outer peripheral edge of semiconductor substrate, and aforementioned detergent remover feed mechanism is to aforementioned
The washable surface supply detergent remover of semiconductor substrate, aforementioned clean component driving portion makes that disk-shaped clean component is .ed while rotating
It is moved from the central part of the washable surface of aforementioned semiconductor substrate to the peripheral side of semiconductor substrate, and aforementioned clean component is made to exist
Brushing is slided on the washable surface of semiconductor substrate or is detached from from the washable surface of semiconductor substrate, and aforementioned control unit control is aforementioned to wash
Net component driving portion.
As described above, brushing method of cleaning according to the present invention and brushing decontaminating apparatus, keep on one side by multiple rollers
And rotate chip, the brushing carried out on one side clean in, can remove caused by the adverse current by the detergent remover of the rotation along with roller
Hydrops can inhibit the generation of the positive secondary pollution of chip.
Description of the drawings
Fig. 1 is the skeleton diagram for showing schematically the brushing decontaminating apparatus for being related to one embodiment of the present invention.
Fig. 2 is the approximate vertical view of brushing decontaminating apparatus shown in FIG. 1.
Fig. 3 is to indicate to clean the skeleton diagram that component is positioned away from from front wafer surface, is to indicate that out reach d is set as d=r-
The skeleton diagram that clean component in the case of t is positioned away from from front wafer surface.
Fig. 4 is that out reach d is set as 0>The outline that clean component in the case of d is positioned away from from front wafer surface
Figure.
Fig. 5 is that out reach d is set as 0<d<Clean component in the case of r-t positions away from general from front wafer surface
Sketch map.
Fig. 6 is that out reach d is set as r-t<d<What the clean component in the case of 2r was positioned away from from front wafer surface
Skeleton diagram.
Fig. 7 is the outline that the clean component in the case that out reach d to be set as to d >=2r is positioned away from from front wafer surface
Figure.
Fig. 8 is the skeleton diagram for the scanning track that 1 point of the most peripheral for indicating brush is described on chip.
Fig. 9 is the chart for the result for indicating experiment 1.
Figure 10 is the chart for the result for indicating experiment 2.
Figure 11 is for illustrating previous brushing method of cleaning（Brushing decontaminating apparatus）The problem of skeleton diagram.
Specific implementation mode
Hereinafter, being based on Fig. 1 to Fig. 7, illustrated to being related to the embodiment of brushing decontaminating apparatus of the present invention.This
Outside, Fig. 1 is the skeleton diagram for showing schematically the brushing decontaminating apparatus for being related to an embodiment, and Fig. 2 is to indicate brushing shown in FIG. 1
The approximate vertical view of the primary structure of decontaminating apparatus.
As shown in Figure 1 and Figure 2, brushing decontaminating apparatus 1 has for keeping semiconductor substrate（Chip）The outer peripheral edge of W it is more
It is a（It is 4 in this embodiment）Roller 2.In aforesaid plurality of roller 2, roller motor M1, Neng Gouxuan are provided with to a roller 2A
Turn drivingly to constitute.On the other hand, other roller 2B are configured to be not rotated driving, and are to maintain semiconductor substrate（Chip）W
Outer peripheral edge, along with semiconductor substrate（Chip）The rotation of W and rotate.
That is, aforementioned roller 2A is rotated by roller motor M1 to the direction being indicated by the arrow A, to what is kept by roller 2A, 2B
Wafer W is to the direction opposite with arrow A（The direction being indicated by the arrow B）Rotation.
In addition, aforementioned brushing decontaminating apparatus 1 has the upper surface of wafer W（Washable surface）The clean component 3 of sliding brushing,
By the lower surface of wafer W（Washable surface）Slide the clean component 4 of brushing.In addition, aforementioned clean component 3 and clean component 4 are round
It is smaller than the diameter of wafer W to be formed as respective diameter for the brush of plate.
In addition, as aforementioned clean component 3 and the material of clean component 4, it is preferred to use water absorption rate be at least 1000% with
On PVA（Polyvinyl alcohol）The sponge of system.
In turn, brushing decontaminating apparatus 1 has the clean component driving portion 5 for driving aforementioned disk-shaped clean component 3,4.
Clean component driving portion 5 by via wafer W it is symmetrical in a manner of, be arranged at the face side and back side of wafer W respectively.
This is cleaned component driving portion 5 and has motor M2, movable arm 5a, motor M3, and aforementioned motors M2 rotation drivings are aforementioned
Disk-shaped clean component 3,4, portion is equipped with aforementioned motors M2 to aforementioned movable arm 5a at one end, and aforementioned motors M3 is assemblied in
The other end side of aforementioned movable arm 5a, rotation drive aforementioned movable arm 5a.
It is rotated by aforementioned motors M2 that is, being configured to clean component 3,4, and is with the rotary shaft of aforementioned motors M3
The heart, movable arm 5a rotations.
In addition, aforementioned motors M3, which is assemblied in supporting station 5b, aforementioned supporting station 5b, can be slidably mounted to mounting table
5c.Installation piston cylinder 5d, aforementioned supporting station 5b and piston cylinder 5d are concatenated on mounting table 5c.
That is, at the brushing decontaminating apparatus 1, it is configured to piston cylinder 5d and stretches, to which aforementioned supporting station 5b is slided, cleans
Component 3,4 and washable surface sliding contact, or be detached from.
In addition, brushing decontaminating apparatus 1 is provided with the action of control aforementioned motors M1, motor M2, motor M3, piston cylinder 5d
Control unit 6.The control is controlled by so-called sequential control.
By the control of the control unit 6, aforementioned disk-shaped clean component 3,4 acts in the following manner：In the same of rotation
When, brushing is slided on one side to the peripheral side of semiconductor substrate W from the central part O1 of washable surface Wa, Wb of aforementioned semiconductor substrate W
It moves on one side, or place is detached from from washable surface in defined position.
That is, as shown in Figure 1, aforementioned clean component 3 since movable arm 5a declines, cleans component 4 due to moveable arm in addition
Portion 5a rises, to be abutted with washable surface Wa, Wb of semiconductor substrate W.Then, as shown in Fig. 2, washing by motor M2 rotations
The positive sliding contact of net component 3,4 and wafer W, and from the central part O1 of washable surface Wa, Wb of semiconductor substrate W to partly leading
The peripheral side of structure base board W is moved on the circular arc represented by the single dotted broken line D across the center O1 of wafer W.If also, cleaning
Component 3,4 reaches specified position（Out reach）, then it is detached from from the washable surface of semiconductor substrate.
In addition, although it is not shown, but on aforementioned brushing decontaminating apparatus 1, having to aforementioned wafer W and supplying washing for detergent remover
Net liquid feed mechanism.
The detergent remover feed mechanism can use the detergent remover feed mechanism used back and forth.Specifically, to crystalline substance
The detergent remover feed mechanism of the upper surface supply detergent remover of piece W is configured to, to the upper surface of aforementioned wafer W（Washable surface）Center
Drip detergent remover in portion.In addition, to the lower surface of wafer W（Washable surface）The detergent remover feed mechanism of supply detergent remover is configured to, to
The lower surface of aforementioned wafer W（Washable surface）Integral spray detergent remover.
Then, illustrate the brushing method of cleaning using brushing decontaminating apparatus 1.In addition, cleaning action and the cleaning unit of component 4
The action of part 3 is same, and and the description is omitted.
First, by roller 2, the outer peripheral edge Wc of wafer W is kept.Then, by aforementioned detergent remover feed mechanism by detergent remover
（It is not shown）It is supplied on the positive Wa of wafer W, and by aforementioned roller motor M2, makes roller 2 to the direction being indicated by the arrow A
Rotation, makes wafer W be rotated to the direction being indicated by the arrow B.The rotating speed of wafer W at this time is 30rpm ~ 60rpm.
At this point, at the peripheral end Wc of wafer W, on the direction being indicated by the arrow E, the rotation along with roller 2 is generated
Detergent remover adverse current.Also, detergent remover adverse current forms cricoid hydrops X to the position indicated with dotted line F.
Then, by aforementioned clean component driving portion 5, on one side by direction direction identical with the direction of rotation of wafer W（With
The direction that arrow C is indicated）The clean component 3 of rotation presses on the front of the wafer W of rotation, moves it on one side.
This cleans component 3 while maintaining rotation status（While cleaning the front of wafer W）, such as the single-point of Fig. 2
Shown in scribing line from the center O1 of wafer W towards outer peripheral edge portion and in defined position from make clean front of the component 3 from wafer W
It leaves.Specifically, as shown in figure 3, being set as in the aforementioned out reach that the radius of clean component 3 is set as r, cleans component 3
D, it is 0 in the out reach for cleaning component 3 when the adverse current distance that detergent remover is generated due to roller 2 is set as t<The position of d≤r-t
Place makes clean component 3 be left from the front of wafer W.At this point, being preferably 0 in the out reach for cleaning component 3<D≤r-t's
At position, make the mobile stopping for cleaning component 3.Mobile stop from by aforementioned to making to clean what component 3 left from the front of wafer W
Time is such as 1 second ~ 1 point.
In addition, out reach d is to clean a part for component 3,4 from the outer peripheral edge Wc protrusions outstanding of semiconductor substrate W
Size, as shown in figure 3, being the line segment parallel with aforementioned tangent line L2 at the tangent line L2 and point P2 of the semiconductor substrate W at point P1
The distance between L3, aforementioned point P1 are the line segment L1 and half of the center O1 and the center O2 of clean component 3 that link semiconductor substrate W
The point of the outer peripheral edge Wc intersections of conductor substrate W, aforementioned point P2 are in center O1 and the clean component 3 for link semiconductor substrate W
The point that the outer peripheral edge Wc of the line segment L1 and semiconductor substrate W of heart O2 intersect.
In addition, the adverse current distance t that detergent remover is generated due to roller 2 is following distances：Due to the presence of roller 2 or the rotation of roller
The radial distance of semiconductor substrate W at the hydrops X of generation.Aforementioned adverse current distance t from aforementioned roller 2 with leaving, by half
The influence of the centrifugal force of the rotation of conductor substrate W and reduce, therefore here, as shown in figure 3, be set as connection semiconductor substrate W's
The length dimension for the hydrops X that the line segment L4 of the center O3 of center O1 and roller is crossed.
Then, it is based on Fig. 3 to Fig. 7, is illustrated for making clean component 3 be positioned away from from front wafer surface.
As shown in figure 4, being 0 or less making aforementioned clean component 3 be positioned away from from front wafer surface as out reach d（That is,
Component 3 is cleaned not leave from front wafer surface from the outer peripheral edge of wafer W is outstanding）In the case of, it cannot remove
The whole for the hydrops X that the outer peripheral edge portion Wc of wafer W is generated（An or part）, the cleaning of washable surface Wa becomes difficult.
On the other hand, as shown in figs. 3 and 5, aforementioned clean component 3 is made to be positioned away from from front wafer surface（Out reach
d）It is 0<d<Under conditions of r-t and d=r-t, relative to the direction of travel for the flowing E1 that unrolls for forming hydrops X, component 3 is cleaned
Direction of rotation will not drive in the wrong direction, and assign the velocity component Cr towards the outside of wafer W（With reference to Fig. 5）, therefore it is easily drained hydrops X,
It is easy to remove hydrops, the generation of the positive secondary pollution of chip can be inhibited.
In contrast, as shown in fig. 6, making aforementioned clean component 3 be positioned away from from front wafer surface（Out reach d）For
r-t<d<Under conditions of 2r, due to cleaning the rotation of component 3, generates and unroll and flow the retrograde flowing ingredient Cx of E1.
Therefore, complicated liquid flowing is generated on the periphery for cleaning component 3, it will be apparent that interfere and contain fine-grained pure water（It washes
Water purification）It is fluid drainage.In addition, according to circumstances, has and generate flowing towards chip inner circumferential side, the positive secondary of wafer W occurs
The possibility of pollution.
In turn, as shown in fig. 7, in the position for making aforementioned clean component 3 leave front wafer surface（Out reach d）For d >=2r
In the case of, it cleans component 3 and fully crosses wafer W, therefore clean component itself to promote to clean.
In this way, making clean component 3 be positioned away from from front wafer surface（Overhanging distance d）In 0<The range of d≤r-t
In the case of interior, the hydrops of the detergent remover polluted is removed, and the washing water containing particle etc. polluted is by outside wafer W
Periphery is discharged outward, can realize further high cleanliness.
In addition, clean component 3 is preferably set as at least 10 or more relative to the rotating ratio of wafer W.
That is, if every 1 rotation for chip, brush rotate to be 10 rotations or more, then brush is in chip whole face
Sliding, therefore good washing-off properties can be obtained.On the other hand, it is rotated to be not in every 1 rotation, the brush for chip
In the case of 10 rotations of foot, brush becomes uneven relative to the sliding of chip, therefore cannot obtain good washing-off properties.
As a result, in the presence of the polluters such as particle cannot be removed（Foreign matter）Possibility, be not preferred.
To specifically describe, then the outer diameter of chip is set as 300mm, makes to clean rotating ratio of the component 3 relative to wafer W
Variation, the scanning track 3x described on chip using 1 point of the most peripheral of the brush of outer diameter 30mm is as example table in fig. 8
Show.
Fig. 8（a）Indicate to be set as the rotating speed of brush be 30rpm, the scanning track 3x for the case where rotating speed of chip is 30rpm,
Fig. 8（b）Indicate to be set as the rotating speed of brush be 300rpm, scanning the track 3x, Fig. 8 of the case where rotating speed of chip is 30rpm（c）Table
Show the scanning track 3x for the case where rotating speed for being set as brush is 600rpm, the rotating speed of chip is 30rpm.
In such manner, it is possible to confirm following situations：Increase and clean rotating ratio of the component 3 relative to wafer W, thus makes sliding contact
The degree of friction becomes larger, and improves the washing-off properties of brush.
Further, it is possible to confirm following situations：In the case where rotating ratio is 10 or more, more good detergency can be obtained
Can, it can realize high cleanliness.
【Embodiment】
（Experiment 1）
ForThe silicon wafer of 300mm carries out chemical mechanical grinding（CMP）.Then, by being illustrated with Fig. 1 and Fig. 2
Brushing decontaminating apparatus（Brushing method of cleaning）, carry out the positive of the silicon wafer after CMP and clean.It indicates to clean condition below.
The rotating speed of silicon wafer is set as 35rpm, in addition, using pure water for detergent remover, its flow is set as 1.0L/min.
At this point, adverse current distance t is 10mm.In addition, the radius r of disk-shaped clean component is 30mm, the movement speed of component is cleaned（It can
The velocity of rotation in swing arm portion）For 4mm/s, it is about 17.1 to clean component relative to the rotating ratio of chip, and the rotating speed for cleaning component is
600rpm cleans the PVA that component is 1000% using water absorption rate（Polyvinyl alcohol）The sponge of system.
Under this condition, make to clean specified position of the component from the center of chip to outer peripheral edge（Out reach）It is mobile（It is sliding
Dynamic brushing）1 time.Also, it is on the move, so that out reach d is met following formula between adverse current distance t and the radius r of clean component
Ground changes：（a）d<0,（b）0<d<R-t,（c）D=r-t,（d）r-t<d<2r,（e）d≥2r.
Specifically, as comparative example 1, out reach d is set as -10mm（（a）d<0 the case where）（With reference to Fig. 4）.As
Embodiment 1, is set as+5mm（（b）0<d<The case where r-t）（With reference to Fig. 5）.As embodiment 2, it is set as+15mm（（b）0<d<r-t
The case where）（With reference to Fig. 3）.As embodiment 3, it is set as+20mm（（c）The case where d=r-t）（With reference to Fig. 3）.As comparative example 2,
It is set as+30mm（（d）r-t<d<2r）（With reference to Fig. 6）.As comparative example 3, it is set as+50mm（（d）r-t<d<2r）（With reference to Fig. 6）.
As comparative example 4, it is set as+60mm（（e）The case where d >=2r）（With reference to Fig. 7）.
Out reach d is set as embodiment 1 ~ 3, comparative example 1 ~ 4, measures respective light point defects number.In addition, sample
（Silicon wafer）Number is each 10, finds out sample（10）In light point defects average value.
In addition, in specified position（Out reach）Place cleans component in the state of the mobile stopping of movable arm, in crystalline substance
On piece sliding brushing after cleaning 1 second, is detached from from front wafer surface.
Hereafter, measure it is each in the case of clean after front wafer surface 26nm or more light point defects（Light Point
Defect）Number.Measurement for light point defects uses details in a play not acted out on stage, but told through dialogues laser light scattering foreign body detecting device（Dark Visual Ye レ ー ザ ー are at random
Iso quality testing Check devices）（The Surfscan SP3 of KLA-Tencor corporations）.
The result indicates in fig.9.In addition, in fig.9, as described above, each graph representation sample（10）Luminous point lack
Sunken average value.In addition, the longitudinal error stick in each chart indicates that deviation, the expression of lateral error stick consider specified position（Outside
Stretch distance）Precision（±5mm）Image.
It can be defined from Fig. 9, in the case where out reach is -10mm（Comparative example 1）, with the clean component of chip peripheral part
Do not reach region centered on, detect 10,000 or more light point defects.It is not removed originally with brush to be inferred as this
Existing for chip periphery the case where particle.
In contrast, it is+5mm ~+20mm in out reach（Embodiment 1 ~ 3）In the case of, light point defects are reduced to 140
It is a or so.On the other hand, further it is increased to+30mm in out reach（Comparative example 2）、+50mm（Comparative example 3）、+60mm
（Comparative example 4）In the case of, light point defects are transformed into increase tendency again, respectively become 250,800,400 or so.
As previously mentioned, being inferred as 0<d<Under conditions of r-t and d=r-t, the row relative to the flowing of unrolling for forming hydrops
Into direction, cleaning the direction of rotation of component will not drive in the wrong direction, and assign the velocity component towards chip peripheral direction, therefore be easily drained
Hydrops, light point defects are reduced.
In contrast, in r-t<d<Under conditions of 2r, relative to the direction of travel for flowing of unrolling, the rotation for cleaning component is generated
Turn the retrograde ingredient in direction, therefore interferes the fluid drainage of hydrops.In addition, according to circumstances, generating the flowing towards chip inner circumferential side.
It is inferred as these reasons, light point defects increase.
In turn, it is inferred as in d >=2r（60mm）In the case of, clean component crosses chip, thus mitigates washing water to crystalline substance
The flowing of circumferential direction in piece, the part containing fine-grained washing water are discharged, therefore light point defects number ratio r-t<d<The shape of 2r
State reduces.
In this way, having assert that the average light point defects number of the front wafer surface after cleaning depends on out reach d, and confirmed
In the range of out reach d preferably+5 ~+20mm（0<d<R-t and d=r-t）.In addition, assert out reach d be+5 ~+
In the case of in the range of 20mm, average light point defects number is 0.2d+140 or less.
（Experiment 2）
In experiment 2, compared with the clean condition of experiment 1, make the movement speed variation of the mobile number and brush of brush, into
Experiment is gone.
That is, in experiment 1, having carried out 1 time makes to clean component from the movement of the center of chip（Slide brushing）Arrive outer peripheral edge
Specified position（Out reach）Clean, but in the experiment 2, further make to clean the center that component returns to chip, instead
Cleaned again, it is total carry out 4 times this clean repeatedly.
In addition, by the movement speed of clean component in experiment 1（The velocity of rotation of movable arm）It is set as 4mm/s, but is
The clean time is set as it is identical, by the movement speed of clean component in experiment 2（The velocity of rotation of movable arm）It is set as
16mm/s。
Also, it is same as experiment 1, as embodiment 4, out reach d is set as+5mm（（b）0<d<The case where r-t）（Ginseng
According to Fig. 5）.As embodiment 5, it is set as+15mm（（b）0<d<The case where r-t）（With reference to Fig. 5）.As embodiment 6, it is set as+20mm
（（c）The case where d=r-t）（With reference to Fig. 3）.As comparative example 5, it is set as+30mm（（d）r-t<d<2r）（With reference to Fig. 6）.As than
Compared with example 6, it is set as+50mm（（d）r-t<d<2r）（With reference to Fig. 6）.As comparative example 7, it is set as+60mm（（e）The case where d >=2r）
（With reference to Fig. 7）.
Also, it is same as experiment 1, measure it is each in the case of clean after front wafer surface 26nm or more light point defects
（Light Point Defect）Number.
The result is indicated in Fig. 10.Also same as experiment 1 in the experiment 2, it is+5 ~+20mm in out reach（0<
d<R-t and d=r-t）In the range of embodiment 4 ~ 6 in, light point defects are reduced to 140 or so.
On the other hand, further it is increased to+30mm in out reach（Comparative example 5）、+50mm（Comparative example 6）、+60mm
（Comparative example 7）In the case of, light point defects are transformed into increase tendency again, respectively become 180,650,530 or so.
As above, in the range of also confirmed that out reach is preferably at+5 ~+20mm in the experiment 2（0<d<R-t and d
=r-t）.In addition, it is understood that average light point defects number relative to out reach d, meets 0.2d+140（Average value light point defects number）
Relationship.
In addition, confirmed following tendencies according to experiment 1 and the result of experiment 2 ,+5mm or more ~ deficiency is in out reach
In the case of the range of+60mm, such as the case where experiment 2, the movement of component is cleaned often（Or movement speed is fast）'s
The light point defects reducing effect of condition is big.
Reference sign
1 brushing decontaminating apparatus（Brushing method of cleaning）
2 rollers
3 clean components（Brush）
4 clean components（Brush）
5 clean component driving portions
The movable arms of 5a
W semiconductor substrates（Chip）
O1 semiconductor substrates（Chip）
X hydrops
D out reach
R radiuses
T adverse current distances.
Claims (6)
1. a kind of brushing method of cleaning, aforementioned brushing method of cleaning keeps the outer peripheral edge one of semiconductor substrate by multiple rollers on one side
While making its rotation, also, clean component is made to slide brushing on the washable surface of semiconductor substrate, thus cleans aforementioned washable surface
To change, aforementioned brushing method of cleaning is characterized in that,
After the central part sliding brushing for making washable surface of the aforementioned clean component in semiconductor substrate,
Make aforementioned clean component while maintaining the state of sliding brushing, center portion is moved to overhanging distance from the foregoing, by
This makes the washable surface of aforesaid semiconductor substrate clean, and aforementioned overhanging distance is a part for aforementioned clean component from semiconductor
The outer peripheral edge distance outstanding of substrate.
2. brushing method of cleaning as described in claim 1, which is characterized in that
The distance statement of outer peripheral edge of the detergent remover of adverse current away from aforementioned wafer into wafer face that will be generated from the rotation of aforementioned roller
For t, the radius of aforementioned disk-shaped clean component is expressed as r, by a part of outstanding overhanging apart from table of clean component
It states as d, at this point, overhanging distance d is in 0<In the range of d≤r-t.
3. brushing method of cleaning as claimed in claim 1 or 2, which is characterized in that
Aforementioned overhanging distance d is in+5mm or more and+20mm ranges below.
4. brushing method of cleaning as claimed any one in claims 1 to 3, which is characterized in that
Aforementioned clean component a part at the overhanging distance outstanding of the outer peripheral edge of semiconductor substrate, stop clean component
Movement of the center portion to the outer peripheral edge direction of semiconductor substrate from the foregoing, after the stipulated time, aforementioned clean component is from partly
The washable surface of conductor substrate leaves.
5. brushing method of cleaning according to any one of claims 1 to 4, which is characterized in that
The direction of rotation of the chip rotated by the rotation of aforementioned roller is same direction with the direction of rotation of clean component, and
The rotating speed of aforementioned clean component is at least 10 relative to the ratio of the rotating speed of aforementioned wafer.
6. a kind of brushing decontaminating apparatus is used in cleaning for the brushing method of cleaning described in any one of claim 1 to 5
Device, aforementioned brushing decontaminating apparatus be characterized in that,
Have roller, detergent remover feed mechanism, clean component driving portion, control unit,
Aforementioned roller has multiple, makes its rotation while keeping the outer peripheral edge of semiconductor substrate,
Aforementioned detergent remover feed mechanism supplies detergent remover to the washable surface of aforementioned semiconductor substrate,
Aforementioned clean component driving portion makes disk-shaped clean component follow the washable surface of aforementioned semiconductor substrate while rotating
Central part moved to the peripheral side of semiconductor substrate, and aforementioned clean component is made to be slided on the washable surface of semiconductor substrate
Brushing is detached from from the washable surface of semiconductor substrate,
Aforementioned control unit controls aforementioned clean component driving portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-028618 | 2017-02-20 | ||
| JP2017028618A JP6901277B2 (en) | 2017-02-20 | 2017-02-20 | Scrub cleaning method and scrub cleaning device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108461415A true CN108461415A (en) | 2018-08-28 |
| CN108461415B CN108461415B (en) | 2021-09-21 |
Family
ID=63220303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710631541.8A Active CN108461415B (en) | 2017-02-20 | 2017-07-28 | Brush cleaning method and brush cleaning device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6901277B2 (en) |
| KR (1) | KR101972217B1 (en) |
| CN (1) | CN108461415B (en) |
| TW (1) | TWI652732B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109848092A (en) * | 2019-01-22 | 2019-06-07 | 上海提牛机电设备有限公司 | A kind of wafer cleaning method |
| CN114473845A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Cleaning device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019192849A (en) * | 2018-04-27 | 2019-10-31 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
| CN111640692B (en) * | 2020-04-26 | 2023-10-10 | 西安奕斯伟材料科技股份有限公司 | Cleaning auxiliary device and cleaning device for wafer |
| JP2023032937A (en) * | 2021-08-27 | 2023-03-09 | グローバルウェーハズ・ジャパン株式会社 | Cleaning method of silicon wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009277811A (en) * | 2008-05-14 | 2009-11-26 | Nikon Corp | Washing machine |
| US20150352600A1 (en) * | 2014-06-10 | 2015-12-10 | Ebara Corporation | Substrate cleaning apparatus |
| CN105382677A (en) * | 2014-08-26 | 2016-03-09 | 株式会社荏原制作所 | buff process module, SUBSTRATE PROCESSING APPARATUS and buff pad cleaning method |
| WO2016067562A1 (en) * | 2014-10-31 | 2016-05-06 | 株式会社荏原製作所 | Substrate cleaning device and substrate cleaning method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5470746B2 (en) * | 2008-05-22 | 2014-04-16 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
| JP5009253B2 (en) * | 2008-08-07 | 2012-08-22 | 東京エレクトロン株式会社 | Substrate cleaning device |
-
2017
- 2017-02-20 JP JP2017028618A patent/JP6901277B2/en active Active
- 2017-06-09 TW TW106119268A patent/TWI652732B/en active
- 2017-06-23 KR KR1020170079661A patent/KR101972217B1/en active IP Right Grant
- 2017-07-28 CN CN201710631541.8A patent/CN108461415B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009277811A (en) * | 2008-05-14 | 2009-11-26 | Nikon Corp | Washing machine |
| US20150352600A1 (en) * | 2014-06-10 | 2015-12-10 | Ebara Corporation | Substrate cleaning apparatus |
| CN105382677A (en) * | 2014-08-26 | 2016-03-09 | 株式会社荏原制作所 | buff process module, SUBSTRATE PROCESSING APPARATUS and buff pad cleaning method |
| WO2016067562A1 (en) * | 2014-10-31 | 2016-05-06 | 株式会社荏原製作所 | Substrate cleaning device and substrate cleaning method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109848092A (en) * | 2019-01-22 | 2019-06-07 | 上海提牛机电设备有限公司 | A kind of wafer cleaning method |
| CN114473845A (en) * | 2020-11-11 | 2022-05-13 | 中国科学院微电子研究所 | Cleaning device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI652732B (en) | 2019-03-01 |
| JP2018137257A (en) | 2018-08-30 |
| KR20180096462A (en) | 2018-08-29 |
| JP6901277B2 (en) | 2021-07-14 |
| KR101972217B1 (en) | 2019-04-24 |
| CN108461415B (en) | 2021-09-21 |
| TW201832279A (en) | 2018-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108461415A (en) | Brushing method of cleaning and brushing decontaminating apparatus | |
| TWI493614B (en) | Substrate cleaning method | |
| US7101255B2 (en) | Polishing apparatus | |
| TWI601196B (en) | Substrate processing method | |
| CN106558484B (en) | post-CMP cleaning and apparatus | |
| CN108493134B (en) | Substrate cleaning device | |
| CN108183081B (en) | Substrate processing apparatus and method for manufacturing processed substrate | |
| KR101554767B1 (en) | Substrate cleaning method and roll cleaning member | |
| US9508575B2 (en) | Disk/pad clean with wafer and wafer edge/bevel clean module for chemical mechanical polishing | |
| JP2014216456A (en) | Substrate cleaning device | |
| TW201443988A (en) | Substrate processing method | |
| JP2015029095A (en) | Double sided buff module for post cmp cleaning | |
| JP2001070896A (en) | Substrate washing device | |
| KR20130007467A (en) | Substrate cleaning method | |
| KR20190133450A (en) | Large area glass chemical mechanical polishing system for OLED | |
| JP2002313767A (en) | Substrate processor | |
| CN114975191A (en) | Vertical wafer cleaning device and method | |
| KR20100130951A (en) | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium having substrate liquid processing program stored therein | |
| JP5245528B2 (en) | Cleaning device | |
| CN117340777A (en) | Chemical mechanical polishing equipment | |
| CN116435220A (en) | Wafer cleaning device | |
| JP2018011087A (en) | Substrate washing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |