JP2009277811A - Washing machine - Google Patents

Washing machine Download PDF

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JP2009277811A
JP2009277811A JP2008126581A JP2008126581A JP2009277811A JP 2009277811 A JP2009277811 A JP 2009277811A JP 2008126581 A JP2008126581 A JP 2008126581A JP 2008126581 A JP2008126581 A JP 2008126581A JP 2009277811 A JP2009277811 A JP 2009277811A
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brush
cleaning
substrate
surface potential
cleaning brush
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JP5245528B2 (en
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Chu Eguchi
宙 江口
Akira Ishikawa
彰 石川
Takehiko Ueda
武彦 上田
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Nikon Corp
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Nikon Corp
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  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a washing machine which prolongs a lifetime of a brush. <P>SOLUTION: This washing machine 1 includes a holding mechanism 10 for holding a board W and a washing brush 21 for washing the board W, and is configured to abut the washing brush 21 on the board W held by the holding mechanism 10 and simultaneously to wash the board W by a relative rotation. The washing machine includes a brush washer 50 for washing the washing brush 21, and this brush washer 50 changes a surface potential of the washing brush 21 to change the surface potential of the washing brush 21 and a surface potential of contaminants attached to the washing brush 21 concerned to the surface potential of an identical positive and negative value therebetween, thereby separating and removing the contaminants from the washing brush 21. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、半導体ウェハ等の基板を洗浄する洗浄装置に関する。   The present invention relates to a cleaning apparatus for cleaning a substrate such as a semiconductor wafer.

近年、半導体装置の製造工程において、化学的機械的研磨（ＣＭＰ：Chemical Mechanical Polishing）によりウェハの表面を平坦化する工程が必須となってきている。このようなＣＭＰ処理を行った後には、スラリーに含まれていた研磨砥粒や、金属不純物等の微細な異物がウェハ上に残存するため、ウェハの洗浄が必要とされる。ウェハの洗浄を行う洗浄装置には、例えば、樹脂製の２つの洗浄用ブラシをウェハの表面および裏面に接触させながらそれぞれ回転させることにより、ウェハを洗浄する構成のものが知られている（例えば、特許文献１を参照）。
特開２００７−１９４２４４号公報 In recent years, in the manufacturing process of a semiconductor device, a process of flattening the surface of a wafer by chemical mechanical polishing (CMP) has become essential. After such a CMP process is performed, the abrasive grains contained in the slurry and fine foreign matters such as metal impurities remain on the wafer, so that the wafer needs to be cleaned. As a cleaning apparatus for cleaning a wafer, for example, one having a configuration for cleaning a wafer by rotating two cleaning brushes made of resin while contacting the front and back surfaces of the wafer is known (for example, , See Patent Document 1).
JP 2007-194244 A

しかしながら、上述のような洗浄装置においては、ウェハの洗浄を行ったブラシをブラシ再生用の基板に擦りつけることにより、ブラシに付着した異物（研磨砥粒や金属不純物等の微粒子）を除去してブラシを再生させていたため、ブラシの寿命が短くなる一因となっていた。   However, in the above-described cleaning apparatus, the brush that has cleaned the wafer is rubbed against the substrate for brush regeneration to remove foreign matters (fine particles such as abrasive grains and metal impurities) attached to the brush. Since the brush was regenerated, it contributed to shortening the life of the brush.

本発明は、このような問題に鑑みてなされたものであり、ブラシの寿命を長くした洗浄装置を提供することを目的とする。   This invention is made | formed in view of such a problem, and it aims at providing the washing | cleaning apparatus which extended the lifetime of the brush.

このような目的達成のため、本発明に係る洗浄装置は、基板を保持する保持機構と、前記基板を洗浄可能なブラシとを備え、前記保持機構に保持された前記基板に前記ブラシを当接させながら相対移動させて前記基板を洗浄するように構成された洗浄装置において、前記ブラシを洗浄するブラシ洗浄器を有し、前記ブラシ洗浄器は、前記ブラシの表面電位を変化させて、前記ブラシの表面電位および前記ブラシに付着した異物の表面電位を互いに正負が同じ表面電位にすることにより、前記ブラシから前記異物を分離して除去するようになっている。   In order to achieve such an object, a cleaning apparatus according to the present invention includes a holding mechanism for holding a substrate and a brush capable of cleaning the substrate, and the brush is brought into contact with the substrate held by the holding mechanism. In the cleaning apparatus configured to clean the substrate by relatively moving the brush, the brush cleaning device has a brush cleaning device for cleaning the brush, and the brush cleaning device changes the surface potential of the brush to change the brush. The surface potential of the surface and the surface potential of the foreign matter adhering to the brush are made to have the same positive and negative surface potential, thereby separating and removing the foreign matter from the brush.

本発明によれば、ブラシの寿命を長くすることができる。   According to the present invention, the life of the brush can be extended.

以下、図面を参照して本発明の好ましい実施形態について説明する。本発明を適用した洗浄装置１の概略構成を図１および図２に示す。この洗浄装置１は、半導体ウェハ等の円板形の基板Ｗを洗浄するための装置であり、基板Ｗを回転可能に保持する保持機構１０と、洗浄ブラシ２１が装着された洗浄ブラシヘッド２０と、洗浄ブラシヘッド２０を駆動するヘッド駆動機構３０と、基板Ｗの表面に洗浄液を供給する洗浄液供給装置４０と、基板Ｗの表面に純水を供給する純水供給装置４５と、洗浄ブラシ２１の洗浄を行うブラシ洗浄器５０とを主体に構成される。   Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. A schematic configuration of a cleaning apparatus 1 to which the present invention is applied is shown in FIGS. The cleaning apparatus 1 is an apparatus for cleaning a disk-shaped substrate W such as a semiconductor wafer, and includes a holding mechanism 10 that rotatably holds the substrate W, a cleaning brush head 20 to which a cleaning brush 21 is attached, A head driving mechanism 30 that drives the cleaning brush head 20, a cleaning liquid supply device 40 that supplies a cleaning liquid to the surface of the substrate W, a pure water supply device 45 that supplies pure water to the surface of the substrate W, and a cleaning brush 21. The main component is a brush cleaner 50 that performs cleaning.

保持機構１０は、基板Ｗに対してそれぞれ等間隔（９０度間隔）に配設された第１〜第４のチャックローラ１１〜１４と、第２のチャックローラ１２と第３のチャックローラ１３との間に配設された回転ローラ１５とを有して構成され、第１〜第４のチャックローラ１１〜１４がそれぞれ基板Ｗの外周端部近傍を支持することにより、基板Ｗが略水平な状態で回転可能に保持される。基板Ｗの外周端部と接触する回転ローラ１５は、図示しない電気モータと連結されており、電気モータの回転駆動力を受けて回転するようになっている。そして、回転ローラ１５に対する回転駆動力は、基板Ｗと回転ローラ１５との間の摩擦力を利用して基板Ｗに伝達され、これにより、回転ローラ１５の回転駆動力を利用して基板Ｗが回転駆動されるようになっている。   The holding mechanism 10 includes first to fourth chuck rollers 11 to 14, a second chuck roller 12, and a third chuck roller 13 that are disposed at equal intervals (90-degree intervals) with respect to the substrate W, respectively. And the first to fourth chuck rollers 11 to 14 each support the vicinity of the outer peripheral end of the substrate W, so that the substrate W is substantially horizontal. It is held in a rotatable state. The rotating roller 15 in contact with the outer peripheral end of the substrate W is connected to an electric motor (not shown) and is rotated by receiving the rotational driving force of the electric motor. Then, the rotational driving force with respect to the rotating roller 15 is transmitted to the substrate W by using the frictional force between the substrate W and the rotating roller 15, whereby the substrate W is rotated by using the rotational driving force of the rotating roller 15. It is designed to rotate.

洗浄ブラシヘッド２０は、図２に示すように、基板Ｗの表面を洗浄する洗浄ブラシ２１と、洗浄ブラシ２１を保持して回転可能なヘッド部材２２とを有して構成される。洗浄ブラシ２１は、樹脂等の高分子材料を用いて円盤状（ディスク状）に形成され、表面（下面）側で基板Ｗの表面洗浄を行う。ヘッド部材２２は、洗浄ブラシ２１よりも若干大きい外径を有する円盤状に形成され、下面側に洗浄ブラシ２１が着脱可能に装着される。また、ヘッド部材２２の上端部は、スピンドル２５を介してヘッド回転機構３１と連結されており、ヘッド部材２２および洗浄ブラシ２１が水平状態で保持されるとともに、ヘッド回転機構３１の回転駆動力を受けて、ヘッド部材２２とともに洗浄ブラシ２１が回転駆動されるようになっている。   As shown in FIG. 2, the cleaning brush head 20 includes a cleaning brush 21 that cleans the surface of the substrate W, and a head member 22 that holds the cleaning brush 21 and is rotatable. The cleaning brush 21 is formed in a disk shape (disk shape) using a polymer material such as a resin, and cleans the surface of the substrate W on the surface (lower surface) side. The head member 22 is formed in a disk shape having an outer diameter slightly larger than that of the cleaning brush 21, and the cleaning brush 21 is detachably mounted on the lower surface side. Further, the upper end portion of the head member 22 is connected to the head rotating mechanism 31 via the spindle 25, and the head member 22 and the cleaning brush 21 are held in a horizontal state, and the rotational driving force of the head rotating mechanism 31 is increased. Accordingly, the cleaning brush 21 is driven to rotate together with the head member 22.

ヘッド駆動機構３０は、洗浄ブラシヘッド２０（洗浄ブラシ２１）を水平面内で回転させるヘッド回転機構３１と、ヘッド回転機構３１とともに洗浄ブラシヘッド２０を水平方向に移動させるヘッド移動機構３２とを有して構成される。ヘッド回転機構３１は、図示しない電気モータ等を主体に構成され、スピンドル２５を介して洗浄ブラシヘッド２０（洗浄ブラシ２１）を回転駆動する。ヘッド移動機構３２は、保持機構１０およびブラシ洗浄器５０の上方に対向して設けられ、ヘッド回転機構３１と連結された洗浄ブラシヘッド２０を、昇降可能に且つ、保持機構１０の上方に位置して基板Ｗを洗浄可能な洗浄位置Ａとブラシ洗浄器５０の上方に位置して洗浄ブラシ２１を洗浄可能なリフレッシュ位置Ｂとの間で水平移動（往復移動）可能に構成される。   The head driving mechanism 30 includes a head rotating mechanism 31 that rotates the cleaning brush head 20 (cleaning brush 21) in a horizontal plane, and a head moving mechanism 32 that moves the cleaning brush head 20 in the horizontal direction together with the head rotating mechanism 31. Configured. The head rotating mechanism 31 is mainly composed of an electric motor (not shown) and the like, and rotationally drives the cleaning brush head 20 (cleaning brush 21) via the spindle 25. The head moving mechanism 32 is provided so as to face the holding mechanism 10 and the brush cleaner 50, and the cleaning brush head 20 connected to the head rotating mechanism 31 can be moved up and down and is positioned above the holding mechanism 10. The substrate W can be horizontally moved (reciprocated) between the cleaning position A where the substrate W can be cleaned and the refresh position B where the cleaning brush 21 can be cleaned.

洗浄液供給装置４０は、図１に示すように、図示しない管路を介して保持機構１０の上方に配設された洗浄液供給ノズル４１から、基板Ｗを洗浄するための洗浄液を基板Ｗの表面に滴下して供給する。洗浄液供給装置４０から供給される洗浄液として、例えばクエン酸水溶液（約ｐＨ５）が用いられる。純水供給装置４５は、図示しない管路を介して保持機構１０の上方に配設された純水供給ノズル４６から、洗浄後の基板Ｗに残留した洗浄液を除去するための純水を基板Ｗの表面に滴下して供給する。   As shown in FIG. 1, the cleaning liquid supply device 40 supplies a cleaning liquid for cleaning the substrate W to the surface of the substrate W from a cleaning liquid supply nozzle 41 disposed above the holding mechanism 10 via a conduit (not shown). Supply dropwise. As the cleaning liquid supplied from the cleaning liquid supply device 40, for example, an aqueous citric acid solution (about pH 5) is used. The pure water supply device 45 supplies pure water for removing the cleaning liquid remaining on the cleaned substrate W from the pure water supply nozzle 46 disposed above the holding mechanism 10 via a pipe line (not shown). It is dropped and supplied to the surface.

ブラシ洗浄器５０は、リフレッシュポット５１と、リフレッシュ液供給装置５５とを有して構成される。リフレッシュポット５１は、洗浄ブラシ２１およびヘッド部材２２よりも外径の大きい有底円筒状に形成され、ヘッド移動機構３２によりリフレッシュ位置Ｂに移動した洗浄ブラシヘッド２０を下降させると、リフレッシュポット５１内に洗浄ブラシ２１が収容されるようになっている。リフレッシュポット５１には、リフレッシュ液供給管５６を介してリフレッシュ液供給装置５５が接続されており、リフレッシュ液供給装置５５からリフレッシュポット５１内に、洗浄ブラシ２１を洗浄するためのリフレッシュ液Ｆが供給されて貯留されるようになっている。リフレッシュ液供給装置５５から供給されるリフレッシュ液Ｆとして、例えば水酸化ナトリウム（NaOH）水溶液（約ｐＨ１２）が用いられる。   The brush cleaner 50 includes a refresh pot 51 and a refresh liquid supply device 55. The refresh pot 51 is formed in a bottomed cylindrical shape having a larger outer diameter than the cleaning brush 21 and the head member 22. When the cleaning brush head 20 moved to the refresh position B by the head moving mechanism 32 is lowered, The cleaning brush 21 is accommodated in the container. A refresh liquid supply device 55 is connected to the refresh pot 51 via a refresh liquid supply pipe 56, and a refresh liquid F for cleaning the cleaning brush 21 is supplied from the refresh liquid supply device 55 into the refresh pot 51. Has been stored. As the refresh liquid F supplied from the refresh liquid supply device 55, for example, a sodium hydroxide (NaOH) aqueous solution (about pH 12) is used.

また、リフレッシュポット５１には純水供給管５２が接続されており、純水供給装置４５からリフレッシュポット５１内に、洗浄後の洗浄ブラシ２１に残留したリフレッシュ液Ｆを除去するための純水が供給されて貯留されるようになっている。そのため、ヘッド移動機構３２によりリフレッシュ位置Ｂに移動した洗浄ブラシヘッド２０をリフレッシュポット５１内に下降させると、リフレッシュポット５１内に貯留されたリフレッシュ液Ｆもしくは純水に洗浄ブラシ２１を浸漬させることが可能になる。なお、リフレッシュポット５１の底部には、図示しない排水弁が設けられており、リフレッシュポット５１内に貯留された液体（リフレッシュ液Ｆもしくは純水）を外部に排出して、リフレッシュポット５１内に貯留される液体を入れ替えることができるようになっている。   A pure water supply pipe 52 is connected to the refresh pot 51, and pure water for removing the refreshing liquid F remaining on the cleaning brush 21 after cleaning is supplied from the pure water supply device 45 into the refresh pot 51. It is supplied and stored. Therefore, when the cleaning brush head 20 moved to the refresh position B by the head moving mechanism 32 is lowered into the refresh pot 51, the cleaning brush 21 may be immersed in the refreshing liquid F or pure water stored in the refresh pot 51. It becomes possible. A drain valve (not shown) is provided at the bottom of the refresh pot 51, and the liquid (refresh liquid F or pure water) stored in the refresh pot 51 is discharged outside and stored in the refresh pot 51. The liquid to be used can be replaced.

以上のように構成される洗浄装置１を用いて基板Ｗの洗浄を行うには、まず、ブラシスクラブ洗浄処理を行う。このブラシスクラブ洗浄処理では、ヘッド移動機構３２により洗浄ブラシヘッド２０を洗浄位置Ａに移動させて、洗浄ブラシ２１を保持機構１０に保持された基板Ｗの上方に対向させ、保持機構１０により基板Ｗを回転させるとともに、ヘッド回転機構３１により洗浄ブラシヘッド２０（洗浄ブラシ２１）を回転させながら、洗浄ブラシヘッド２０を下降させて洗浄ブラシ２１を基板Ｗに当接させる。そして、洗浄液供給装置４０を用いて洗浄液供給ノズル４１から基板Ｗの表面（上面）に洗浄液を供給しながら、洗浄ブラシ２１を基板Ｗの表面に当接させた状態で回転させることにより、基板Ｗの洗浄が行われる。   In order to clean the substrate W using the cleaning apparatus 1 configured as described above, first, a brush scrub cleaning process is performed. In this brush scrub cleaning process, the cleaning brush head 20 is moved to the cleaning position A by the head moving mechanism 32, the cleaning brush 21 is opposed to the upper side of the substrate W held by the holding mechanism 10, and the substrate W is moved by the holding mechanism 10. While rotating the cleaning brush head 20 (cleaning brush 21) by the head rotating mechanism 31, the cleaning brush head 20 is lowered to bring the cleaning brush 21 into contact with the substrate W. Then, while supplying the cleaning liquid from the cleaning liquid supply nozzle 41 to the surface (upper surface) of the substrate W using the cleaning liquid supply device 40, the cleaning brush 21 is rotated while being in contact with the surface of the substrate W. Cleaning is performed.

このようにしてブラシスクラブ洗浄処理を行った後、ブラシリフレッシュ処理を行う。このブラシリフレッシュ処理では、ヘッド移動機構３２により洗浄ブラシヘッド２０をリフレッシュ位置Ｂに移動させて洗浄ブラシ２１をリフレッシュポット５１の上方に対向させ、ヘッド回転機構３１により洗浄ブラシヘッド２０（洗浄ブラシ２１）を回転させながら、洗浄ブラシヘッド２０を下降させてリフレッシュポット５１内に貯留されたリフレッシュ液Ｆに洗浄ブラシ２１を浸漬させる。なお、リフレッシュポット５１内に貯留されるリフレッシュ液Ｆは、リフレッシュ液供給装置５５からリフレッシュ液供給管５６を介してリフレッシュポット５１内に供給される。   After performing the brush scrub cleaning process in this way, a brush refresh process is performed. In this brush refresh process, the cleaning brush head 20 is moved to the refresh position B by the head moving mechanism 32 so that the cleaning brush 21 faces the refresh pot 51, and the cleaning brush head 20 (cleaning brush 21) by the head rotating mechanism 31. , The cleaning brush head 20 is lowered and the cleaning brush 21 is immersed in the refreshing liquid F stored in the refresh pot 51. The refresh liquid F stored in the refresh pot 51 is supplied from the refresh liquid supply device 55 into the refresh pot 51 through the refresh liquid supply pipe 56.

ところで、基板Ｗの洗浄を行った洗浄ブラシ２１の表面には、図３（ａ）に示すように、研磨砥粒や金属不純物等といった微細な異物Ｂが付着する。基板Ｗの等電位点をｐＨ２とし、異物Ｂの等電位点をｐＨ３とし、洗浄ブラシ２１の等電位点をｐＨ６としたとき、図４に示すように、水素イオン濃度（ｐＨ）がｐＨ２以下もしくはｐＨ６以上の条件でブラシスクラブ洗浄処理を行なうと、基板Ｗと異物Ｂの表面電位は互いに正負が同じ表面電位となり、異物Ｂと洗浄ブラシ２１の表面電位も互いに正負が同じ表面電位となるため、基板Ｗと異物Ｂとの間に生じる斥力およびブラシスクラブによる機械的効果の２つの効果により、基板Ｗ上から異物Ｂを除去することが可能である。   By the way, as shown in FIG. 3A, fine foreign matters B such as abrasive grains and metal impurities adhere to the surface of the cleaning brush 21 that has cleaned the substrate W. When the equipotential point of the substrate W is pH2, the equipotential point of the foreign substance B is pH3, and the equipotential point of the cleaning brush 21 is pH6, as shown in FIG. 4, the hydrogen ion concentration (pH) is less than pH2 or When the brush scrub cleaning process is performed under a condition of pH 6 or higher, the surface potentials of the substrate W and the foreign matter B have the same surface potential, and the surface potentials of the foreign matter B and the cleaning brush 21 have the same positive and negative surface potential. The foreign matter B can be removed from the substrate W by two effects of the repulsive force generated between the substrate W and the foreign matter B and the mechanical effect by the brush scrub.

さらに、水素イオン濃度（ｐＨ）がｐＨ３〜ｐＨ６の範囲でブラシスクラブ洗浄処理を行なうと、基板Ｗと異物Ｂの表面電位は互いに正負が同じ表面電位となり、異物Ｂと洗浄ブラシ２１の表面電位は互いに正負が異なる表面電位となるため、基板Ｗと異物Ｂとの間に生じる斥力およびブラシスクラブによる機械的効果、さらには異物Ｂと洗浄ブラシ２１との間に生じる引力の３つの効果により、基板Ｗ上から異物Ｂを効果的に除去することができる。このとき、図３（ａ）に示すように、異物Ｂと洗浄ブラシ２１との間に生じる引力のため、洗浄ブラシ２１の表面に異物Ｂが付着して蓄積されることとなるが、異物Ｂと洗浄ブラシ２１との間に斥力が生じるｐＨ３以下もしくはｐＨ６以上の条件で洗浄ブラシ２１をリフレッシュ（ブラシリフレッシュ処理）することにより、図３（ｂ）に示すように、洗浄ブラシ２１の表面に蓄積した異物Ｂを洗浄ブラシ２１からリフレッシュ液Ｆ中に分離して除去することが可能である。   Further, when the brush scrub cleaning process is performed in the range where the hydrogen ion concentration (pH) is in the range of pH 3 to pH 6, the surface potentials of the substrate W and the foreign matter B become the same surface potential, and the surface potentials of the foreign matter B and the cleaning brush 21 are Since the surface potentials are different from each other in positive and negative, the substrate has three effects of repulsive force generated between the substrate W and the foreign matter B and mechanical effect due to the brush scrub, and further, attractive force generated between the foreign matter B and the cleaning brush 21. Foreign matter B can be effectively removed from W. At this time, as illustrated in FIG. 3A, the foreign matter B adheres to and accumulates on the surface of the cleaning brush 21 due to the attractive force generated between the foreign matter B and the cleaning brush 21. By refreshing the cleaning brush 21 under a condition of pH 3 or lower or pH 6 or higher at which repulsive force is generated between the cleaning brush 21 and the cleaning brush 21, as shown in FIG. It is possible to separate the removed foreign matter B from the cleaning brush 21 into the refreshing liquid F and remove it.

なお、水素イオン濃度（ｐＨ）がｐＨ２〜ｐＨ３の範囲でブラシスクラブ洗浄処理を行なうと、基板Ｗと異物Ｂとの間に引力が生じるため、ブラシスクラブによる機械的効果により基板Ｗ上から異物Ｂが引き離されたとしても、当該引き離された異物Ｂが基板Ｗに再付着し、洗浄効率が悪いことが予想される。   In addition, if the brush scrub cleaning process is performed in the range of the hydrogen ion concentration (pH) of pH 2 to pH 3, an attractive force is generated between the substrate W and the foreign matter B. Therefore, the foreign matter B from the substrate W is caused by the mechanical effect of the brush scrub. Is separated, the separated foreign matter B is reattached to the substrate W, and it is expected that the cleaning efficiency is poor.

なお、基板Ｗ、異物Ｂ、および洗浄ブラシ２１の表面電位は、基板Ｗ上もしくは洗浄ブラシ２１の表面に供給する液体（すなわち、洗浄液やリフレッシュ液、リンス水等）の水素イオン濃度（ｐＨ）を変化させることにより制御する。また、このような液体に含まれる電解質や界面活性剤の種類と濃度によっても制御することができる。   The surface potential of the substrate W, the foreign matter B, and the cleaning brush 21 is the hydrogen ion concentration (pH) of the liquid (that is, cleaning liquid, refresh liquid, rinse water, etc.) supplied onto the substrate W or the surface of the cleaning brush 21. Control by changing. It can also be controlled by the type and concentration of the electrolyte or surfactant contained in such a liquid.

また、洗浄ブラシ２１の等電位点は、洗浄ブラシ２１の材質（例えば、高分子に含まれる酸性基（例えば、カルボキシル基）と塩基性基（例えば、アミノ基や水酸基）の配合比率）により制御することも可能である。また、洗浄ブラシ２１としてポリビニルアルコールをホルマール化したＰＶＡスポンジブラシを用いる場合には、ホルマール化度によっても等電位点を制御することができる。   In addition, the equipotential point of the cleaning brush 21 is controlled by the material of the cleaning brush 21 (for example, the blending ratio of acidic groups (for example, carboxyl groups) and basic groups (for example, amino groups and hydroxyl groups) contained in the polymer). It is also possible to do. Further, when a PVA sponge brush obtained by formalizing polyvinyl alcohol is used as the cleaning brush 21, the equipotential point can be controlled by the degree of formalization.

このように、リフレッシュ液Ｆに洗浄ブラシ２１を浸漬させて、洗浄ブラシ２１から異物Ｂ（研磨砥粒や金属不純物等の微粒子）をリフレッシュ液Ｆ中に分離した後、図示しない排水弁によりリフレッシュポット５１内に貯留されたリフレッシュ液Ｆを外部に排出してから、純水供給装置４５により純水供給管５２を介してリフレッシュポット５１内に純水を供給し、リフレッシュポット５１内に貯留した純水に洗浄ブラシ２１を浸漬させる。これにより、洗浄後の洗浄ブラシ２１に残留したリフレッシュ液Ｆが除去される（すなわち、純水により洗浄ブラシ２１の表面がリンスされる）。   As described above, the cleaning brush 21 is immersed in the refreshing liquid F, and the foreign matter B (fine particles such as abrasive grains and metal impurities) is separated from the cleaning brush 21 into the refreshing liquid F, and then refreshed by a drain valve (not shown). After the refresh liquid F stored in 51 is discharged to the outside, pure water is supplied into the refresh pot 51 through the pure water supply pipe 52 by the pure water supply device 45, and the pure water stored in the refresh pot 51 is stored in the refresh pot 51. The cleaning brush 21 is immersed in water. Thereby, the refreshing liquid F remaining on the cleaning brush 21 after cleaning is removed (that is, the surface of the cleaning brush 21 is rinsed with pure water).

また、ブラシリフレッシュ処理と平行して、スプレーリンス処理およびスピンドライ処理が行われる。スプレーリンス処理では、保持機構１０により基板Ｗを回転させながら、純水供給装置４５を用いて純水供給ノズル４６から基板Ｗの表面（上面）に純水を供給する。これにより、洗浄後の基板Ｗに残留した洗浄液が除去される（すなわち、純水により基板Ｗの表面がリンスされる）。スプレーリンス処理の後、スピンドライ処理が行われ、このスピンドライ処理では、保持機構１０により基板Ｗを高速で回転させ、基板Ｗに付着した液体（純水等）を飛ばして基板Ｗを乾燥させる。   In parallel with the brush refresh process, a spray rinse process and a spin dry process are performed. In the spray rinsing process, pure water is supplied from the pure water supply nozzle 46 to the surface (upper surface) of the substrate W using the pure water supply device 45 while rotating the substrate W by the holding mechanism 10. As a result, the cleaning liquid remaining on the cleaned substrate W is removed (that is, the surface of the substrate W is rinsed with pure water). After the spray rinsing process, a spin dry process is performed. In this spin dry process, the substrate W is rotated at a high speed by the holding mechanism 10, and a liquid (pure water or the like) attached to the substrate W is blown to dry the substrate W. .

この結果、本実施形態の洗浄装置１によれば、ブラシ洗浄器５０が、洗浄ブラシ２１の表面電位を変化させて、洗浄ブラシ２１の表面電位および洗浄ブラシ２１に付着した異物Ｂの表面電位を互いに正負が同じ表面電位にすることにより、洗浄ブラシ２１から異物Ｂを分離して除去するため、洗浄ブラシ２１に大きなダメージを与えることなく洗浄ブラシ２１から異物Ｂを除去することができ、洗浄ブラシ２１の寿命を長くすることが可能になる。   As a result, according to the cleaning apparatus 1 of the present embodiment, the brush cleaner 50 changes the surface potential of the cleaning brush 21 to change the surface potential of the cleaning brush 21 and the surface potential of the foreign matter B attached to the cleaning brush 21. Since the foreign matter B is separated and removed from the cleaning brush 21 when the positive and negative surface potentials are the same, the foreign matter B can be removed from the cleaning brush 21 without damaging the cleaning brush 21, and the cleaning brush It is possible to extend the life of 21.

またこのとき、リフレッシュ液供給装置５５およびリフレッシュポット５１を用いて、リフレッシュ液Ｆを洗浄ブラシ２１の表面に供給して洗浄ブラシ２１の表面電位を変化させ、洗浄ブラシ２１の表面電位および異物Ｂの表面電位を互いに正負が同じ表面電位にすることにより、洗浄ブラシ２１から異物Ｂをリフレッシュ液Ｆ中に分離して除去することが好ましく、このようにすれば、簡便な構成で洗浄ブラシ２１から異物Ｂを除去することが可能になる。   At this time, the refresh liquid supply device 55 and the refresh pot 51 are used to supply the refresh liquid F to the surface of the cleaning brush 21 to change the surface potential of the cleaning brush 21 so that the surface potential of the cleaning brush 21 and the foreign matter B are changed. It is preferable to separate and remove the foreign matter B from the cleaning brush 21 into the refreshing liquid F by setting the surface potentials to the same positive and negative surface potentials. In this way, the foreign matter can be removed from the cleaning brush 21 with a simple configuration. B can be removed.

なお、本願の発明者は、本実施形態に関する実験を行っている。この実験ではまず、基板Ｗとして直径φ３００ｍｍのシリコンウェハを実験室内に暴露し、０．２μｍ以上の異物を１００００〜５００００個付着させた汚染サンプルを製作した。次いで、本実施形態の洗浄装置１を用いて汚染サンプルを洗浄し乾燥させた。そして、ウェハ異物検査器（図示せず）を用いて洗浄前後における０．２μｍ以上の異物の数を測定することにより、洗浄による異物の除去率を求めた。   Note that the inventor of the present application conducts an experiment relating to the present embodiment. In this experiment, first, a silicon wafer having a diameter of 300 mm was exposed as a substrate W in the laboratory, and a contaminated sample was produced in which 10,000 to 50,000 foreign matters having a size of 0.2 μm or more were adhered. Next, the contaminated sample was cleaned and dried using the cleaning apparatus 1 of the present embodiment. And the removal rate of the foreign material by washing | cleaning was calculated | required by measuring the number of the foreign material of 0.2 micrometer or more before and behind washing | cleaning using a wafer foreign material inspection device (not shown).

この実験では、ブラシリフレッシュ処理を行わずに汚染サンプル１０枚を連続して洗浄する場合（以下、実験１と称する）と、汚染サンプル１枚を洗浄する毎にブラシリフレッシュ処理を行ないながら、汚染サンプル１０枚を洗浄する場合（以下、実験２と称する）とで、異物の除去率を比較した。   In this experiment, when 10 contaminated samples are continuously washed without performing the brush refresh process (hereinafter referred to as Experiment 1), the contaminated sample is subjected to the brush refresh process each time one contaminated sample is washed. In the case of cleaning 10 sheets (hereinafter referred to as Experiment 2), the removal rate of foreign matters was compared.

なお、実験１および実験２で行われるブラシスクラブ洗浄処理は、同じ処理条件であり、次に示すような条件でブラシスクラブ洗浄処理を行った。   In addition, the brush scrub cleaning process performed in Experiment 1 and Experiment 2 is the same processing conditions, and the brush scrub cleaning process was performed under the following conditions.

洗浄ブラシの回転数 ：５００ｒｐｍ
ウェハの回転数 ：２０ｒｐｍ
洗浄液 ：クエン酸水溶液（約ｐＨ５）
洗浄液流量 ：１０００ｍｌ／ｍｉｎ
処理時間 ：１２０ｓｅｃ Number of rotations of cleaning brush: 500 rpm
Wafer rotation speed: 20 rpm
Washing solution: citric acid aqueous solution (about pH 5)
Cleaning liquid flow rate: 1000 ml / min
Processing time: 120 sec

また、実験１および実験２で行われるスプレーリンス処理は、同じ処理条件であり、次に示すような条件でスプレーリンス処理を行った。   Moreover, the spray rinse process performed in Experiment 1 and Experiment 2 is the same process conditions, and the spray rinse process was performed under the following conditions.

ウェハの回転数 ：２０ｒｐｍ
リンス液 ：純水
リンス液流量 ：１０００ｍｌ／ｍｉｎ
処理時間 ：１２０ｓｅｃ Wafer rotation speed: 20 rpm
Rinse solution: Pure water Rinse solution flow rate: 1000 ml / min
Processing time: 120 sec

また、実験１および実験２で行われるスピンドライ処理は、同じ処理条件であり、次に示すような条件でスピンドライ処理を行った。   Moreover, the spin dry process performed in Experiment 1 and Experiment 2 is the same process conditions, and the spin dry process was performed under the following conditions.

ウェハの回転数 ：１５００ｒｐｍ
処理時間 ：１２０ｓｅｃ Wafer rotation speed: 1500rpm
Processing time: 120 sec

そして、実験２で行われるブラシリフレッシュ処理は、次に示すような条件で処理を行った。   The brush refresh process performed in Experiment 2 was performed under the following conditions.

洗浄ブラシの回転数 ：１０ｒｐｍ
リフレッシュ液 ：水酸化ナトリウム（NaOH）水溶液（約ｐＨ１２）
リフレッシュ液流量 ：１００ｍｌ／ｍｉｎ
処理時間 ：１２０ｓｅｃ Number of rotations of cleaning brush: 10 rpm
Refresh liquid: Sodium hydroxide (NaOH) aqueous solution (about pH 12)
Refresh liquid flow rate: 100 ml / min
Processing time: 120 sec

なお、異物Ｂと洗浄ブラシ２１の等電位点は不明であるが、一般にｐＨを十分大きくすることで、物体の（すなわち、異物Ｂおよび洗浄ブラシ２１の）表面電位は負（−）の表面電位になると考えられる。図５は、実験１および実験２における処理枚数と異物の除去率を示している。この図５から、洗浄ブラシ２１と異物Ｂとの間に斥力が生じるｐＨ領域のリンス水（リフレッシュ液）を用いて、洗浄ブラシ２１に堆積した異物Ｂを除去することにより、洗浄ブラシ２１の異物除去性能を維持できることがわかる。   Although the equipotential point between the foreign matter B and the cleaning brush 21 is unknown, generally the surface potential of the object (that is, the foreign matter B and the cleaning brush 21) is negative (−) by increasing the pH sufficiently. It is thought that it becomes. FIG. 5 shows the number of processed sheets and the foreign matter removal rate in Experiment 1 and Experiment 2. From FIG. 5, the foreign matter B accumulated on the cleaning brush 21 is removed using rinse water (refresh liquid) in a pH region where repulsive force is generated between the cleaning brush 21 and the foreign matter B. It can be seen that the removal performance can be maintained.

なお、上述の実施形態において、図２の二点鎖線で示すように、リフレッシュポット５１の底部近傍に、異物捕集用の板状の回収部材６０を設け、この回収部材６０の表面電位が異物Ｂの表面電位と正負が異なる表面電位となるように制御することで、洗浄ブラシ２１からリフレッシュ液Ｆ中に分離された異物Ｂを回収部材６０に付着させるようにしてもよい。このようにすれば、回収部材６０に異物Ｂが付着してリフレッシュ液Ｆ中に異物Ｂが残留しないため、洗浄ブラシ２１から異物Ｂを効果的に除去することができる。なお、回収部材６０に異物Ｂが蓄積した場合、例えば薬液を用いて、回収部材６０の表面電位が異物Ｂの表面電位と正負が同じ表面電位となるように制御し、当該薬液をリフレッシュポット５１から排出するようにすれば、回収部材６０に蓄積した異物Ｂを除去して回収部材６０を繰り返し使用することが可能になる。   In the above-described embodiment, as shown by a two-dot chain line in FIG. 2, a plate-like recovery member 60 for collecting foreign matter is provided near the bottom of the refresh pot 51, and the surface potential of the recovery member 60 has a foreign matter. The foreign matter B separated from the cleaning brush 21 into the refreshing liquid F may be attached to the recovery member 60 by controlling the surface potential to be different from the surface potential of B. In this way, the foreign matter B adheres to the recovery member 60 and the foreign matter B does not remain in the refreshing liquid F, so that the foreign matter B can be effectively removed from the cleaning brush 21. When the foreign matter B accumulates in the recovery member 60, for example, using a chemical solution, the surface potential of the recovery member 60 is controlled to be the same as the surface potential of the foreign matter B, and the chemical solution is refreshed by the refresh pot 51. If it is made to discharge | emit, it will become possible to remove the foreign material B accumulate | stored in the collection | recovery member 60, and to use the collection | recovery member 60 repeatedly.

また、上述の実施形態において、洗浄ブラシ２１が円盤状（ディスク状）に形成されているが、これに限られるものではなく、例えば、円筒状に形成されていてもよく、球形に形成されていてもよい。   Further, in the above-described embodiment, the cleaning brush 21 is formed in a disc shape (disk shape), but is not limited thereto, and may be formed in a cylindrical shape or a spherical shape, for example. May be.

また、上述の実施形態において、リフレッシュポット５１に貯留されたリフレッシュ液Ｆに洗浄ブラシ２１を浸漬させることで、洗浄ブラシ２１から異物Ｂを分離して除去しているが、これに限られるものではなく、例えば、保持機構１０から基板Ｗを取り除いた状態で、洗浄ブラシヘッド２０を前述の洗浄位置Ａに位置させたまま、洗浄ブラシ２１の表面に前述のリフレッシュ液Ｆを吹きかけるようにすることで、洗浄ブラシ２１から異物Ｂを除去するようにしてもよい。   In the above-described embodiment, the foreign substance B is separated and removed from the cleaning brush 21 by immersing the cleaning brush 21 in the refresh liquid F stored in the refresh pot 51. However, the present invention is not limited to this. For example, in the state where the substrate W is removed from the holding mechanism 10, the refreshing liquid F is sprayed on the surface of the cleaning brush 21 while the cleaning brush head 20 is positioned at the cleaning position A. The foreign matter B may be removed from the cleaning brush 21.

本発明に係る洗浄装置の平面図である。It is a top view of the washing | cleaning apparatus which concerns on this invention. 本発明に係る洗浄装置の側面図である。It is a side view of the washing | cleaning apparatus which concerns on this invention. 洗浄ブラシヘッドの拡大図である。It is an enlarged view of a cleaning brush head. 表面電位と引力もしくは斥力との関係を示す図である。It is a figure which shows the relationship between surface potential and attractive force or repulsive force. 異物の除去率を示すグラフである。It is a graph which shows the removal rate of a foreign material.

符号の説明Explanation of symbols

Ｗ 基板
Ｂ 異物 Ｆ リフレッシュ液
１ 洗浄装置 １０ 保持機構
２０ 洗浄ブラシヘッド
２１ 洗浄ブラシ ２２ ヘッド部材
５０ ブラシ洗浄器
５１ リフレッシュポット ５５ リフレッシュ液供給装置
６０ 回収部材 W substrate B foreign matter F refresh liquid 1 cleaning device 10 holding mechanism 20 cleaning brush head 21 cleaning brush 22 head member 50 brush cleaning device 51 refresh pot 55 refresh liquid supply device 60 recovery member

Claims (3)

基板を保持する保持機構と、前記基板を洗浄可能なブラシとを備え、前記保持機構に保持された前記基板に前記ブラシを当接させながら相対移動させて前記基板を洗浄するように構成された洗浄装置において、
前記ブラシを洗浄するブラシ洗浄器を有し、
前記ブラシ洗浄器は、前記ブラシの表面電位を変化させて、前記ブラシの表面電位および前記ブラシに付着した異物の表面電位を互いに正負が同じ表面電位にすることにより、前記ブラシから前記異物を分離して除去することを特徴とする洗浄装置。 A holding mechanism for holding the substrate and a brush capable of cleaning the substrate are configured to clean the substrate by moving the brush while abutting against the substrate held by the holding mechanism. In the cleaning device,
A brush cleaner for cleaning the brush;
The brush cleaner separates the foreign matter from the brush by changing the surface potential of the brush so that the surface potential of the brush and the surface potential of the foreign matter attached to the brush have the same positive and negative surface potential. The cleaning device is characterized by being removed. 前記ブラシ洗浄器は、前記ブラシの表面電位を変化させるための液体を前記ブラシの表面に供給する液体供給装置を有し、
前記液体供給装置により前記液体を前記ブラシの表面に供給して前記ブラシの表面電位を変化させ、前記ブラシの表面電位および前記異物の表面電位を互いに正負が同じ表面電位にすることにより、前記ブラシから前記異物を前記液体中に分離して除去することを特徴とする請求項１に記載の洗浄装置。 The brush cleaner has a liquid supply device that supplies a liquid for changing the surface potential of the brush to the surface of the brush,
The liquid is supplied to the surface of the brush by the liquid supply device, the surface potential of the brush is changed, and the surface potential of the brush and the surface potential of the foreign matter are set to the same surface potential with the same sign. The cleaning apparatus according to claim 1, wherein the foreign matter is separated and removed from the liquid into the liquid. 前記ブラシ洗浄器は、前記ブラシから前記液体中に分離された前記異物を付着させる回収部材を有し、
前記回収部材の表面電位は、前記液体中に分離された前記異物の表面電位と正負が異なる表面電位であることを特徴とする請求項２に記載の洗浄装置。 The brush cleaner has a recovery member for adhering the foreign matter separated from the brush into the liquid,
The cleaning apparatus according to claim 2, wherein the surface potential of the recovery member is a surface potential that is different from the surface potential of the foreign matter separated in the liquid.
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JP2021044465A (en) * 2019-09-13 2021-03-18 株式会社ディスコ Cleaning device

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JP2006278956A (en) * 2005-03-30 2006-10-12 Dainippon Screen Mfg Co Ltd Apparatus and method for substrate processing
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Publication number Priority date Publication date Assignee Title
CN108461415A (en) * 2017-02-20 2018-08-28 环球晶圆日本股份有限公司 Brushing method of cleaning and brushing decontaminating apparatus
JP2018137257A (en) * 2017-02-20 2018-08-30 グローバルウェーハズ・ジャパン株式会社 Scrubbing cleaning method and scrubbing cleaning apparatus
CN108461415B (en) * 2017-02-20 2021-09-21 环球晶圆日本股份有限公司 Brush cleaning method and brush cleaning device
JP2021044465A (en) * 2019-09-13 2021-03-18 株式会社ディスコ Cleaning device
JP7328094B2 (en) 2019-09-13 2023-08-16 株式会社ディスコ cleaning equipment

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