CN114975191A - Vertical wafer cleaning device and method - Google Patents

Vertical wafer cleaning device and method Download PDF

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Publication number
CN114975191A
CN114975191A CN202210756707.XA CN202210756707A CN114975191A CN 114975191 A CN114975191 A CN 114975191A CN 202210756707 A CN202210756707 A CN 202210756707A CN 114975191 A CN114975191 A CN 114975191A
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CN
China
Prior art keywords
wafer
cleaning
brush
vertical
cleaning brush
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Pending
Application number
CN202210756707.XA
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Chinese (zh)
Inventor
李长坤
赵德文
路新春
曹自立
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Huahaiqingke Co Ltd
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Huahaiqingke Co Ltd
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Priority to CN202210756707.XA priority Critical patent/CN114975191A/en
Publication of CN114975191A publication Critical patent/CN114975191A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • B08B1/12
    • B08B1/20
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • B08B3/022Cleaning travelling work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Abstract

The invention discloses a vertical wafer cleaning device and a vertical wafer cleaning method, wherein the vertical wafer cleaning method comprises the following steps: when the rolling cleaning brush performs rolling brushing on the rotating wafer, the first spray rod supplies cleaning liquid to the upper area of the surface of the wafer above the cleaning brush; the second spray bar is caused to supply the cleaning liquid to a lower area of the front surface of the wafer located below the brush, the lower area being located in an upstream side area of the brush with respect to the rotation direction of the wafer.

Description

Vertical wafer cleaning device and method
Technical Field
The invention relates to the technical field of semiconductor wafer processing, in particular to a vertical wafer cleaning device and method.
Background
In the semiconductor field, the cleanliness of the wafer surface is one of the important factors affecting the reliability of semiconductor devices. In wafer processing, for example: deposition, plasma etching, photolithography, electroplating, etc., may introduce contamination and/or particles on the wafer surface, resulting in a reduced wafer surface cleanliness and a low yield of manufactured semiconductor devices.
In order to achieve the purpose of no contamination on the wafer surface, it is necessary to remove the contamination on the wafer surface to prevent the contamination from remaining on the wafer surface before the process. Therefore, in the wafer manufacturing process, it is necessary to perform surface cleaning many times to remove contaminants such as metal ions, atoms, organic substances, and particles attached to the wafer surface.
The roller brush cleaning is used as a wafer cleaning mode with wider application, and the working principle is as follows: the wafer is rotated, and a cleaning liquid such as deionized water or chemical liquid is supplied from a supply nozzle onto the wafer while a roll-shaped cleaning material such as a roll sponge is brought into sliding contact with the wafer. The surface of the wafer is cleaned by sliding contact between the cleaning member and the wafer in the presence of the cleaning liquid.
However, the prior art has the following problems: since the wafer and the cleaning member rotate simultaneously, the area on the surface of the wafer where the scrubbing effect is the best is the first area where the relative speed between the cleaning member and the wafer is the highest. And the other side of the first area relative to the center of the wafer is a second area with the lowest relative speed of the cleaning piece and the wafer, and the brushing effect is poor. During the cleaning process, the cleaning liquid is simultaneously supplied to the first area and the second area, the new cleaning liquid newly supplied to the first area is mostly transferred to the second area to contact with the cleaning member as the wafer rotates, and the used cleaning liquid containing the cleaning dust under the cleaning member returns to the first area again as the wafer rotates, so that the new cleaning liquid in the first area is diluted. In summary, the first region with a good scrubbing effect is not only small in the amount of the new cleaning liquid to be newly supplied, but also diluted with the used cleaning liquid containing the cleaning debris, which eventually causes a reduction in the cleaning effect, and causes the surface of the wafer to have contaminants left thereon, resulting in a reduction in the yield.
Disclosure of Invention
The embodiment of the invention provides a vertical wafer cleaning device and method, and aims to at least solve one of the technical problems in the prior art.
A first aspect of an embodiment of the present invention provides a vertical wafer cleaning apparatus, including:
the wafer rotating assembly is used for supporting the wafer and driving the wafer to rotate in the vertical plane;
the two cleaning brushes are respectively arranged on two sides of the wafer and are used for rolling and brushing the surface of the wafer;
the cleaning brush driving mechanism is used for supporting the cleaning brush and driving the cleaning brush to move and rotate;
a first spray bar for supplying cleaning solution to an upper region of the surface of the wafer above the cleaning brush;
and a second spray bar for supplying the cleaning liquid to a lower area of the front surface of the wafer located below the brush, wherein the lower area is located in an area on an upstream side of the brush with respect to the rotation direction of the wafer.
In one embodiment, the two cleaning brushes roll in opposite directions and apply a downward frictional force to the wafer at their contact locations with the wafer.
In one embodiment, when viewed from the inlet end of the cleaning brush, the wafer rotates upward, the cleaning brush located on the left side of the wafer rotates clockwise, and the cleaning brush located on the right side of the wafer rotates counterclockwise.
In one embodiment, the supply angle of the cleaning liquid relative to the surface of the wafer is 5-30 degrees.
In one embodiment, the rotation speed of the wafer is 20-200 rpm.
In one embodiment, the wafer rotation assembly includes a drive roller and a follower roller disposed below the wafer.
In one embodiment, the drive roller and the driven roller are configured with a groove disposed along an outer circumferential side of the roller body.
In one embodiment, a rotation speed sensor for detecting the rotation speed of the wafer is arranged on the driving roller.
In one embodiment, the washing brush driving mechanism includes:
the cleaning brush supporting assembly is used for supporting two cleaning brushes positioned at two sides of the wafer to be cleaned;
and the cleaning brush moving assembly is connected with the cleaning brush supporting assembly so as to drive the cleaning brush supporting assembly and the cleaning brush on the cleaning brush supporting assembly to integrally move.
In one embodiment, the vertical wafer cleaning device further comprises a displacement sensor for measuring the distance between the two cleaning brushes.
A second aspect of an embodiment of the present invention provides a vertical wafer cleaning method, including:
when the rolling cleaning brush performs rolling brushing on the rotating wafer, the first spray rod supplies cleaning liquid to the upper area of the surface of the wafer above the cleaning brush;
the second spray bar is caused to supply the cleaning liquid to a lower area of the front surface of the wafer located below the brush, the lower area being located in an upstream side area of the brush with respect to the rotation direction of the wafer.
In one embodiment, the wafer vertical cleaning method further comprises: and spraying chemical liquid to the second spray rod to prevent the cleaning brush from contaminating the pollutants.
In one embodiment, the wafer vertical cleaning method further comprises: the two cleaning brushes on both sides of the wafer are controlled to roll in opposite directions and apply a downward frictional force to the wafer at the contact positions thereof with the wafer.
In one embodiment, the wafer vertical cleaning method further comprises: and controlling the rotation direction of the wafer so as to see the liquid inlet end of the cleaning brush to rotate the wafer upwards.
In one embodiment, the wafer vertical cleaning method further comprises: rotating the wafer, and controlling the first spray rod to spray cleaning solution to the surface of the wafer;
clamping the wafer by the cleaning brush to start scrubbing for a first preset duration;
controlling the first spray rod to stop spraying, and enabling the second spray rod to start spraying cleaning liquid to the surface of the wafer for a second preset time;
and repeatedly executing the alternating cleaning steps of the first spray rod and the second spray rod.
In one embodiment, the supply angle of the cleaning liquid relative to the surface of the wafer is 5-30 degrees.
In one embodiment, the rotation speed of the wafer is 20-200 rpm.
In one embodiment, the wafer vertical cleaning method further comprises: and detecting the pollution degree of the cleaning brush, and controlling the first spray rod and/or the second spray rod to rotate by a certain angle to wash the cleaning brush after the pollution degree of the cleaning brush reaches a certain degree.
In one embodiment, the wafer vertical cleaning method further comprises: and adjusting the operation angle of the second spray rod according to the operation condition of the second spray rod so that the cleaning solution is sprayed to cover the boundary line between the wafer and the cleaning brush.
In one embodiment, the wafer vertical cleaning method further comprises: and adjusting the angle of the second spray rod to enable the second spray rod to be vertical to the inner wall of the wafer or the cleaning device for spraying so as to clean the second spray rod by utilizing the cleaning liquid reflected by the inner wall of the wafer or the cleaning device.
The embodiment of the invention has the beneficial effects that: the second spray rod is designed below the cleaning brush, so that fresh cleaning liquid is supplied to the area with the highest relative speed between the cleaning brush and the wafer, and the pollutant removing effect is improved under the double effects of large liquid supply amount and strong scrubbing effect.
Drawings
FIG. 1 illustrates a wafer processing apparatus provided in accordance with an embodiment of the present invention;
FIG. 2 illustrates a vertical wafer cleaning apparatus according to an embodiment of the present invention;
FIG. 3 illustrates the operation of the vertical wafer cleaning apparatus of FIG. 2;
figure 4 shows the working principle of the washing brush of figure 3;
FIG. 5 illustrates a vertical wafer cleaning method according to an embodiment of the present invention;
fig. 6 shows a vertical cleaning method for a wafer according to another embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein. It should be understood that, unless otherwise specified, the following description of the embodiments of the present invention is made for the convenience of understanding, and the description is made in a natural state where relevant devices, apparatuses, components, etc. are originally at rest and no external control signals and driving forces are given.
Further, it is also noted that terms used herein such as front, back, up, down, left, right, top, bottom, front, back, horizontal, vertical, and the like, to denote orientation, are used merely for convenience of description to facilitate understanding of relative positions or orientations, and are not intended to limit the orientation of any device or structure.
In order to explain the technical solution of the present invention, the following description is made with reference to the accompanying drawings in combination with the embodiments.
In the present application, Chemical Mechanical Polishing (Chemical Mechanical Planarization) is also called Chemical Mechanical Planarization (Chemical Mechanical Planarization), wafer (wafer) is also called wafer, silicon wafer, substrate or substrate (substrate), etc., and the meaning and the actual function are equivalent.
As shown in fig. 1, a wafer processing apparatus 100 according to an embodiment of the present invention includes: a cache module 110, two process modules 120, and a front end module 150.
The buffer modules 110 may be provided in multiple layers, and the multiple layers of buffer modules 110 may buffer multiple wafers at the same time.
The processing modules 120 are used to polish wafers, and the two processing modules 120 can operate independently. Each processing module 120 may include: a polishing unit 121, a first robot arm 122, a transfer unit 123, a second robot arm 124, and a plurality of cleaning units 125.
As shown in fig. 1, the wafer processing apparatus 100 includes four polishing units 121, and the polishing units 121 may be chemical mechanical polishing units. When the wafer processing apparatus 100 is in operation, the wafer may enter any one or more of the four polishing units 121 for polishing, and after one or more polishing steps are completed, the wafer is returned to the transport unit 123. As shown in fig. 1, each polishing unit 121 may include: a polishing disk 211, a polishing head 212, and a loading/unloading platform 213, the loading/unloading platform 213 of each of the two polishing units 121 being disposed adjacent to the second robot arm 124.
As shown in fig. 1, a transfer module 130 may be formed between the polishing units 121 of the two processing modules 120, and the transfer units 123 may be disposed in the transfer module 130. The transfer unit 123 may transfer the wafer between the first robot 122 and the second robot 124. The first robot 122 moves between the buffer module 110 and the transfer unit 123 and between the transfer unit 123 and the wash unit 125. The second robot 124 serves to transfer the wafer for the polishing unit 121.
As shown in fig. 1, each wash unit 125 may include: a plurality of cleaning modules 251, drying modules 252, vertical buffer modules 253, and inversion modules 254, the cleaning modules 251, drying modules 252, vertical buffer modules 253, and inversion modules 254 being arranged side-by-side. At least one of the cleaning modules 251 can be realized by the wafer vertical cleaning device 1, and can also be realized by various modes such as immersion type, rotation type, megasonic type and/or spray type. The drying module 252 may dry the wafer in various manners, such as a rotary manner and/or a pull-up manner. It is understood that the number of cleaning modules 251 may be other numbers, and is not limited to that shown in FIG. 1.
As shown in fig. 1, each wash unit 125 may further include: a third robot 255 and a fourth robot 256, the third robot 255 moving over the wash module 251 and the vertical buffer module 253, the fourth robot 256 moving over the wash module 251, the dry module 252 and the inverter module 254.
As shown in fig. 1, an arrangement space 140 is left between the cleaning units 125 of the two processing modules 120, and the two first robots 122 and the buffer module 110 are disposed in the arrangement space 140.
Fig. 2 is a schematic structural diagram of the wafer vertical cleaning apparatus 1 according to an embodiment of the present invention, and the wafer vertical cleaning apparatus 1 includes a box 10, a wafer rotating assembly 20, two cleaning brushes 40, a cleaning brush driving mechanism 30, a first spray bar 61, and a second spray bar 62.
As shown in fig. 2, in one embodiment of the present invention, a wafer rotating assembly 20 is used to support and drive the wafer w to rotate in a vertical plane. The wafer rotating assembly 20 is disposed at an upper portion of the base, and the wafer w to be cleaned is supported by the wafer rotating assembly 20 and rotates about a horizontal axis. The rotation speed of the wafer w is 20 to 200rpm, preferably 20 to 50 rpm.
Wherein, wafer rotating assembly 20 includes fixing base, a pair of initiative running roller and driven running roller, and initiative running roller and driven running roller dispose the draw-in groove that is used for supporting wafer w, and the draw-in groove sets up around the periphery side of running roller. The driving roller and the driven roller are arranged on the fixing seat. Driven roller sets up in the middle part of fixing base, and the initiative running roller symmetry sets up in driven roller's both sides. The pair of driving rollers and the driven rollers are arranged along the outline of the outer edge of the wafer w, the wafer w placed on the wafer rotating assembly 20 is limited by the clamping groove, and the outer edge of the wafer w is tangent to the bottom surface of the clamping groove. The driving roller is provided with a driving motor, and the driving motor drives the driving roller to rotate. The friction between the outer edge of the wafer w and the roller drives the wafer w to rotate around the axis of the wafer w.
In one embodiment, the driven roller is provided with a rotation speed sensor for detecting the rotation speed of the wafer w, and the rotation speed sensor can be implemented by a hall sensor or a photoelectric switch sensor.
As shown in fig. 2, in one embodiment of the present invention, two cleaning brushes are respectively disposed on both sides of the wafer w and perform rolling brushing on the surface of the wafer w. The two cleaning brushes 40 are a first cleaning brush 41 and a second cleaning brush 42, which are respectively disposed on both sides of the wafer w to be cleaned and can roll around their axes to contact the surface of the wafer w to be cleaned for cleaning. The washing brush 40 has a cylindrical structure, which is made of a material having good water absorption, such as polyvinyl alcohol (PVA). Since the cleaning brush 40 becomes soft after charging the liquid and the wafer w can be cleaned, it is necessary to keep the cleaning brush 40 in the charged state as needed during the cleaning.
The cleaning brushes 40 positioned at both sides of the wafer w may be moved in a horizontal direction to be away from or close to the wafer w. When the cleaning brush 40 is far away from the wafer w, a certain gap is reserved between the cleaning brush 40 and the wafer w, and the wafer w can be clamped by the wafer carrying manipulator to take away the cleaned wafer w; when the brush 40 moves closer to the wafer w, the brush 40 contacts the wafer w to clean the front surface of the wafer w in a contact manner.
As shown in fig. 2, in an embodiment of the present invention, a cleaning brush driving mechanism 30 is used to drive two cleaning brushes 40 to move towards each other and hold a wafer w at an angle for rolling cleaning. The washing brush driving mechanism 30 includes a washing brush supporting assembly and a washing brush moving assembly.
And a cleaning brush supporting assembly for supporting the two cleaning brushes 40 positioned at both sides of the wafer w to be cleaned.
And a cleaning brush moving assembly connected to the cleaning brush supporting assembly to drive the cleaning brush supporting assembly and the cleaning brush 40 thereon to move integrally. The cleaning brush moving assembly comprises a guide rail, a lead screw and a driving part, the guide rail and the lead screw are respectively connected with the cleaning brush supporting assembly to enable the cleaning brush supporting assembly to move along the guide rail under the driving of the lead screw, the driving part is arranged at the end part of the lead screw, and the driving part drives the lead screw to move so as to drive the cleaning brush supporting assembly and the cleaning brush 40 to integrally move, so that the two ends of the cleaning brush 40 are simultaneously contacted with or far away from the wafer w. Further, the screw rods are respectively provided at both ends of the cleaning brush 40, so that the moving distances of both ends of the cleaning brush 40 can be respectively adjusted.
In one embodiment, a displacement sensor is provided on the washing brush support assembly for measuring the distance between the two washing brushes.
As shown in fig. 2, in an embodiment of the present invention, the wafer vertical cleaning apparatus 1 further includes a liquid inlet mechanism 50 connected to one end of the cleaning brush, and as shown by a bold arrow in fig. 3, the liquid is continuously supplied to the cleaning brush through the liquid inlet mechanism 50, so that the cleaning brush is kept in a wet state. Wherein, the cleaning brush is made of porous material, can adsorb a large amount of liquid. The liquid may be an acidic or basic solution, or may be deionized water.
As shown in fig. 2, in one embodiment of the present invention, a first spray bar 61 and a second spray bar 62 are provided in the wafer vertical cleaning apparatus 1 for supplying a cleaning liquid to the surface of the wafer w. The supply angle of the cleaning liquid with respect to the surface of the wafer w is 5 to 30 °.
A first spray bar 61 for supplying a cleaning liquid to an upper area of the front surface of the wafer w above the brush, wherein the upper area is located above a contact area of the brush with the wafer w;
and a second shower rod 62 for supplying a cleaning liquid to a lower area of the front surface of the wafer w positioned below the brush, the lower area being positioned in an area on the upstream side of the brush with respect to the rotation direction of the wafer w.
The operation of wafer cleaning is briefly described below with reference to fig. 2.
Firstly, a wafer w to be cleaned is placed on the wafer rotating assembly 20 by a manipulator, and at the moment, a certain distance is reserved between the cleaning brush 40 and the side surface of the wafer w, so that an operation space is provided for the manipulator; under the action of friction force, the wafer rotating assembly 20 drives the wafer w to rotate around the axis thereof;
next, the first spray bar 61 and the second spray bar 62 spray a cleaning liquid, such as an acidic or alkaline cleaning liquid, toward the rotating wafer w;
next, the cleaning brush 40 is rolled around its axis and moved toward the position of the wafer w so that the cleaning brush 40 is in contact with the surface of the wafer w; the cleaning brush 40 brushes the surface of the wafer w in a rolling manner to remove the pollutants on the surface of the wafer w, so that the surface of the wafer w is brushed;
after the wafer w is cleaned, the cleaning brush 40 moves towards the outer side of the wafer w, and the cleaning brush 40 is separated from the surface of the wafer w;
then, the first spray bar 61 continues to spray the cleaning solution toward the rotating wafer w, and after a certain period of time, the robot transfers the wafer w that has been cleaned to the next process.
The working principle of the embodiment of the present invention is described below with reference to fig. 3.
First, in order to prevent the wafer w from being lifted up from the pockets of the driving roller and the driven roller located therebelow, the brush needs to be set to a specific rotation direction. As shown in fig. 3, the two washing brushes roll in opposite directions, and a downward frictional force is applied to the wafer w at the contact position thereof with the wafer w, thereby restraining the wafer w between the washing brushes and the rollers.
In the embodiment of the present invention, as shown in fig. 2, one end of the brush is connected to the inlet mechanism 50, and the other end of the brush is connected to the brush driving mechanism 30. One end of the cleaning brush connected with the liquid inlet mechanism 50 is used as a liquid inlet end, and the liquid inlet end is used as a reference and is positioned at the right side position in the figures 2 and 3.
As shown in fig. 3, when viewed from the inlet end of the brush, that is, when viewed from the inlet end to which the inlet mechanism 50 is connected in fig. 3, that is, when viewed in the direction indicated by the arrow marked with a broken frame in fig. 3, as shown in fig. 4, the left surface of the wafer is the front surface w1, the front surface w1 is the surface on which the device is located, the right surface of the wafer is the back surface w2, the end surface of the w-side of the wafer is turned upward, the first brush 41 positioned on the left side of the wafer w is rotated clockwise, and the rotation speed of the first brush 41 is set to V B (ii) a The second brush 42 positioned on the right side of the wafer w rotates counterclockwise, and the rotation speed of the second brush 42 is set to V B . The two cleaning brushes clamp the wafer w in the middle and apply a downward force to the wafer w, and the wafer w is supported by the driving rollers and the driven rollers.
As shown in fig. 3, the wafer w rotates counterclockwise in a direction facing the wafer w, and the rotation speed of the wafer w is V W . Two areas are formed by the relative rotation direction of the brush and the wafer w with the center of the wafer w as a boundary, and as shown by a dotted line frame in fig. 3, a first area R1 located on the right side of the wafer w and a second area R2 located on the left side of the wafer w are formed in the direction facing the wafer w.
In the first region R1, the relative speed between the brush and the wafer w is: v R1 =V B +V W It can be seen that the relative speed of the first region R1 is high, and the brushing effect is good.
In the second region R2, the relative speed between the brush and the wafer w is: v R2 =V B -V W It can be seen that the relative speed of the second region R2 is low and the brushing effect is poor.
In the embodiment of the present invention, the first spray bar 61 sprays fresh cleaning solution to the first region R1, and a large amount of fresh cleaning solution is transferred to the second region R2 by following the rotation of the wafer w due to the friction and adhesion between the cleaning solution and the wafer w. The second spray bar 62 sprays fresh cleaning liquid to the upstream side below the wafer w, and the fresh cleaning liquid can be supplied to the first region R1 by the wafer w, so that the concentration and flow rate of the fresh cleaning liquid in the first region R1 are increased, and the cleaning effect is improved. And, the second spray bar 62 can wash the lower area of the wafer w to wash away the used cleaning solution, so as to prevent the cleaning dust therein from adhering to the cleaning brush or the wafer w again, thereby improving the removal effect of the contaminants.
According to the vertical wafer cleaning device 1 provided by the embodiment of the invention, the second spray rod 62 is additionally arranged to provide a large amount of fresh cleaning liquid for the first region R1 with a remarkable brushing effect, so that under the double effects of large liquid supply amount and remarkable brushing effect, the cleaning effect is obviously improved, and the wafer yield is improved.
As shown in fig. 5, based on the structure of the vertical wafer cleaning apparatus 1, an embodiment of the present invention further provides a vertical wafer cleaning method, including:
step S51 of, when the rotating wafer is subjected to rolling brush scrubbing by the rolling brush, causing the first spray bar 61 to supply the cleaning liquid to the upper area of the front surface of the wafer located above the brush;
in step S52, the second spray bar 62 is caused to supply the cleaning solution to the lower area of the front surface of the wafer positioned below the brush, the lower area being positioned in the upstream side area of the brush with respect to the rotation direction of the wafer.
The cleaning liquid may be water, for example, deionized water (DIW), but is not limited to the DIW, and may be any one of carbonated water, electrolytic ion water, hydrogen-rich water, and ozone water. The cleaning liquid can also be a chemical liquid, and the chemical liquid can be an acid solution or an alkaline solution.
Referring to fig. 3, there is a first region R1 where the linear velocities are added and a second region R2 where the linear velocities are subtracted due to the specific motion relationship between the wafer and the brush. In the first region R1, the relative speed between the wafer and the brush is high, and the brushing ability is high.
The first spray bar 61 sprays fresh cleaning solution to the upper area of the wafer surface above the brush, that is, the first area R1 in fig. 3, and a large amount of fresh cleaning solution is transferred to the second area R2 by the friction and adhesion between the cleaning solution and the wafer w as it rotates. The second spray bar 62 sprays fresh cleaning liquid to the lower area of the front surface of the wafer positioned below the first brush 41, that is, sprays fresh cleaning liquid to the upstream side below the wafer w, and a large amount of fresh cleaning liquid is supplied to the first area R1 by the drive of the wafer w, so that the concentration and flow rate of the fresh cleaning liquid in the first area R1 are increased, and the cleaning effect is improved. And the second spray bar 62 can wash the lower area of the wafer w to wash away the used cleaning solution, so as to prevent the cleaning scraps therein from adhering to the cleaning brush or the wafer w again, thereby improving the removal effect of the pollutants.
According to the cleaning method provided by the embodiment of the invention, a large amount of fresh cleaning liquid is supplied to the first region R1 with high scrubbing capacity by adding the second spray rod 62, so that the large amount of fresh cleaning liquid and high scrubbing capacity are realized in the same region, the cleaning effect is obviously improved, and the wafer yield is improved.
In one embodiment, the second spray bar 62 is controlled to spray the chemical to prevent the cleaning brush from back-staining the contaminants. The chemical solution may be an acidic solution or a basic solution. The second spray rod 62 sprays chemical liquid, so that pollutants in used waste liquid can be removed, the cleaning brush can be cleaned to a certain extent, and secondary pollution of pollutants is reduced.
As shown in fig. 3 and 4, in one embodiment, the rotation direction of the washing brush is set to: the two cleaning brushes on both sides of the wafer are rolled in opposite directions and exert a downward frictional force on the wafer at the contact position thereof with the wafer.
As shown in fig. 4, in one embodiment, the rotation direction of the wafer is set as: the direction of rotation of the wafer is controlled to rotate the wafer upward as viewed from the inlet end of the cleaning brush.
By controlling the rotation direction of the wafer and the two cleaning brushes, the wafer can be prevented from being taken up from the roller supporting the wafer by the rotating cleaning brushes according to the specific matching mode.
As shown in fig. 6, in another embodiment, the specific steps of the cleaning method include:
and (1) placing the wafer on a wafer rotating assembly, specifically, placing the wafer on a roller positioned at the bottom of the cleaning chamber by a mechanical arm.
And (2) rotating the wafer, and controlling the first spray rod 61 to spray cleaning liquid, which can be deionized water and chemical liquid, on the surface of the wafer.
And (3) clamping the wafer by the cleaning brush to start cleaning for a first preset time period, wherein the first preset time period can be 10-30 s, and is preferably 20 s.
And (4) controlling the first spray rod 61 to stop spraying, so that the second spray rod 62 starts to spray cleaning liquid, which can be deionized water and chemical liquid, onto the surface of the wafer for a second preset time period, wherein the second preset time period can be 10 s-30 s, and is preferably 20 s.
And (5) repeatedly performing the alternating cleaning of the first spray bar 61 and the second spray bar 62, namely repeating the steps (2) to (4) for 2-5 times, wherein the specific times are determined by the process.
And (6) after cleaning is finished, taking the wafer by a manipulator.
Through test verification, the embodiment can realize effective promotion of the cleaning effect.
Further, in one embodiment, the pollution degree of the cleaning brush is detected, and after the pollution degree of the cleaning brush reaches a certain degree, the first spray rod and/or the second spray rod are controlled to rotate by a certain angle so as to clean the cleaning brush. The contamination level of the washing brush may be detected by an image sensor installed in the casing 10, for example, the contamination level may be represented by brightness, and the like.
In summary, according to the vertical wafer cleaning method provided by the embodiment of the present invention, the second spray bar 62 is added to the lower portion of the cleaning chamber, so that the fresh cleaning liquid can enter the first region R1 with the linear velocity added, and the pollutant removal capability is enhanced.
Preferably, an image sensor or an angle sensor and the like can be selectively configured for the box body, so as to adjust the operation angle of the second spray rod 62 according to the operation condition fed back by the sensor, and/or adjust the operation angle of the second spray rod 62 according to the measured positioning angle; the function of the adjustment is to enable the sprayed cleaning solution or deionized water to effectively remove dirt and adapt to rolling brushes of different materials and/or flexibility (the rolling brushes of different materials are deformed to different degrees when being squeezed).
Specifically, the second spray bar 62 may be adjusted such that the nozzle thereof sprays a liquid such as a cleaning liquid perpendicularly to the wafer or the inner wall of the chamber, thereby performing a back cleaning (self-cleaning) of the second spray bar 62 by using the cleaning liquid reflected by the wafer.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Claims (20)

1. A vertical belt cleaning device of wafer, characterized by, includes:
the wafer rotating assembly is used for supporting the wafer and driving the wafer to rotate in the vertical plane;
the two cleaning brushes are respectively arranged on two sides of the wafer and are used for rolling and brushing the surface of the wafer;
the cleaning brush driving mechanism is used for supporting the cleaning brush and driving the cleaning brush to move and rotate;
a first spray bar for supplying cleaning solution to an upper region of the surface of the wafer above the cleaning brush;
and a second spray bar for supplying the cleaning liquid to a lower area of the front surface of the wafer located below the brush, wherein the lower area is located in an area on an upstream side of the brush with respect to the rotation direction of the wafer.
2. The vertical wafer cleaning apparatus according to claim 1, wherein the two cleaning brushes roll in opposite directions and exert a downward frictional force on the wafer at a position where they contact the wafer.
3. The vertical wafer cleaning apparatus as recited in claim 2, wherein the wafer is rotated upward as viewed from the inlet end of the cleaning brush, the cleaning brush located on the left side of the wafer is rotated clockwise, and the cleaning brush located on the right side of the wafer is rotated counterclockwise.
4. The vertical wafer cleaning apparatus as claimed in claim 1, wherein the supply angle of the cleaning liquid with respect to the surface of the wafer is 5 ° to 30 °.
5. The vertical wafer cleaning apparatus as claimed in claim 1, wherein the rotation speed of the wafer is 20-200 rpm.
6. The vertical wafer cleaning apparatus as recited in claim 1, wherein the wafer rotation assembly includes a drive roller and a follower roller, the drive roller and the follower roller being disposed below the wafer.
7. The wafer vertical cleaning apparatus of claim 6, wherein the drive roller and the idler roller are configured with a notch disposed along an outer peripheral side of the roller body.
8. The vertical wafer cleaning device as claimed in claim 6, wherein the driving roller is provided with a rotation speed sensor for detecting the rotation speed of the wafer.
9. The wafer vertical cleaning apparatus of claim 1, wherein the cleaning brush drive mechanism comprises:
the cleaning brush supporting assembly is used for supporting two cleaning brushes positioned at two sides of the wafer to be cleaned;
and the cleaning brush moving assembly is connected with the cleaning brush supporting assembly so as to drive the cleaning brush supporting assembly and the cleaning brush on the cleaning brush supporting assembly to integrally move.
10. The vertical wafer cleaning apparatus according to any one of claims 1 to 9, further comprising a displacement sensor for measuring a distance between the two cleaning brushes.
11. A vertical wafer cleaning method is characterized by comprising the following steps:
when the rolling cleaning brush performs rolling cleaning on the rotating wafer, the first spray rod supplies cleaning liquid to the upper area of the surface of the wafer above the cleaning brush;
the second spray bar is caused to supply the cleaning liquid to a lower area of the front surface of the wafer located below the brush, the lower area being located in an upstream side area of the brush with respect to the rotation direction of the wafer.
12. The vertical wafer cleaning method of claim 11, further comprising:
and spraying chemical liquid to the second spray rod to prevent the cleaning brush from contaminating the pollutants.
13. The vertical wafer cleaning method of claim 11, further comprising:
the two cleaning brushes on both sides of the wafer are controlled to roll in opposite directions and apply a downward frictional force to the wafer at the contact positions thereof with the wafer.
14. The vertical wafer cleaning method of claim 13, further comprising:
and controlling the rotation direction of the wafer so as to see the liquid inlet end of the cleaning brush to rotate the wafer upwards.
15. The wafer vertical cleaning method of claim 11, further comprising:
rotating the wafer, and controlling the first spray rod to spray cleaning solution to the surface of the wafer;
clamping the wafer by the cleaning brush to start scrubbing for a first preset duration;
controlling the first spray rod to stop spraying, and enabling the second spray rod to start spraying cleaning liquid to the surface of the wafer for a second preset time;
and repeatedly executing the alternating cleaning steps of the first spray rod and the second spray rod.
16. The vertical wafer cleaning method as claimed in claim 11, wherein the supply angle of the cleaning liquid with respect to the surface of the wafer is 5 ° to 30 °.
17. The vertical wafer cleaning method according to claim 11, wherein the rotation speed of the wafer is 20-200 rpm.
18. The vertical wafer cleaning method of claim 11, further comprising:
and detecting the pollution degree of the cleaning brush, and controlling the first spray rod and/or the second spray rod to rotate by a certain angle to wash the cleaning brush after the pollution degree of the cleaning brush reaches a certain degree.
19. The vertical wafer cleaning method as claimed in claim 11, wherein the operation angle of the second spray bar is adjusted according to the operation condition of the second spray bar, so that the cleaning solution is sprayed to cover the boundary line between the wafer and the cleaning brush.
20. The vertical wafer cleaning method as claimed in claim 11, wherein the angle of the second spray bar is adjusted to spray perpendicularly to the inner wall of the wafer or the cleaning apparatus, so as to clean the second spray bar with the cleaning liquid reflected by the inner wall of the wafer or the cleaning apparatus.
CN202210756707.XA 2022-06-30 2022-06-30 Vertical wafer cleaning device and method Pending CN114975191A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116787253A (en) * 2023-08-18 2023-09-22 浙江求是半导体设备有限公司 Driving mechanism, wafer surface cleaning equipment and polishing equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116787253A (en) * 2023-08-18 2023-09-22 浙江求是半导体设备有限公司 Driving mechanism, wafer surface cleaning equipment and polishing equipment

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