CN108461064A - 电致发光显示器及其驱动方法 - Google Patents
电致发光显示器及其驱动方法 Download PDFInfo
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Abstract
公开一种电致发光(EL)显示器。所述EL显示器包含在排列于N列与M行的矩阵中的像素单元,N和M为自然数;用以选择目标像素单元的扫描线;用以提供数据给所选像素单元的数据线;以及用以控制分别耦接至第(2k‑1)条及第2k条扫描线的紧邻列的像素单元的一控制线E_k,k为介于1至N/2的自然数。
Description
技术领域
本发明涉及一种电致发光显示器及其驱动方法。
背景技术
用以呈现画面的显示器可包含在一矩阵内排列成列与行的多个像素。这些像素的每一列通过一栅极线(或扫描线)而耦接至栅极驱动器,而这些像素的每一行则通过一数据线(或源极线)而耦接至数据驱动器。所述的栅极驱动器通过其个别的栅极线来选择多个目标像素的相应列。所述的数据驱动器则通过其个别的数据线将数据提供至所选列中多个像素的相应行。
发明内容
本发明的实施例提供一种电致发光(EL)显示器。该EL显示器包含在排列于N列与M行的矩阵中的多个像素单元,N和M为自然数;多个扫描线用以选择目标像素单元;多个数据线用以提供数据给目标像素单元;以及一控制线用以控制分别耦接至第(2k-1)条及第2k条扫描线的紧邻列的像素单元,k为介于1至N/2的自然数。
在一实施例中,该控制线平行于该扫描线而延伸。
在另一实施例中,该些像素单元中的一第一像素单元包含一第一EL装置及用以控制该第一EL装置的一第一控制器。此外,该些像素单元中的一第二像素单元包含一第二EL装置及用以控制该第二EL装置的一第二控制器。
于又一实施例中,该第一EL装置是设于该第二控制器上方,且该第二EL装置是设于该第一控制器上方。
在又另一实施例中,该第一EL装置包含一晶体管,且该晶体管的一栅极是用以接收通过该控制线所传送的一控制信号。此外,该第二EL装置包含一晶体管,及此晶体管的一栅极是用以接收通过该控制线所传送的一控制信号。
本发明的某些实施例提供一种驱动电致发光(EL)显示器的方法,该EL显示器包含排列于一矩阵中的多个像素单元。该方法包含通过N条扫描线来扫描该矩阵以选择目标像素单元,N为自然数;通过M条数据线将一影像数据提供给该目标像素单元,M为自然数;以及通过一控制线将一控制信号提供给该目标像素单元,该控制线控制该矩阵中分别耦接至第(2k-1)条及第2k条扫描线的紧邻列的像素单元,k为介于1至N/2的自然数。
在一实施例中,该方法还包含根据该影像数据,分别由一第一像素单元的一第一EL装置及一第二像素单元的一第二EL装置发出光线。
在另一实施例中,该第一EL装置是设于该第二像素单元的一第二控制器上方,且该第二EL装置是设于该第一像素单元的一第一控制器上方。
附图说明
在阅读了下文实施方式以及附随附图时,能够最佳地理解本公开的多种态样。应注意到,根据本领域的标准作业习惯,图中的各种特征并未依比例绘制。事实上,为了能够清楚地进行描述,可能会刻意地放大或缩小某些特征的尺寸。
图1为根据某些实施例,一电致发光(EL)显示器的示意图。
图2为根据某些实施例,图1所示EL显示器中的控制器与其个别的EL装置的概要布局。
图3为根据某些实施例,图1所示EL显示器中例示性像素单元的透视图。
图4A为根据一实施例,图1所示EL显示器中例示性像素单元的附图。
图4B为根据一实施例,图1所示EL显示器中例示性像素单元的电路图。
图5A为根据另一实施例,图1所示EL显示器中例示性像素单元的附图。
图5B为根据另一实施例,图1所示EL显示器中例示性像素单元的电路图。
图6为根据某些实施例,用以驱动EL显示器的方法的流程图。
附图标记说明:
10 电致发光显示器
12 主动区域
P_1M、P_2M、P_1M-1、P_2M-1 像素单元
S_1~S_N 扫描线
D_1~D_M 数据线
E_1~E_N/2 控制线
CTR_A~CTR_F、CTR_1M-1、CTR_1M、CTR_2M-1、CTR_2M
控制器
EL_A~EL_F、EL_2M-1、EL_2M、EL_1M-1、EL_1M EL 装置
R_n、R_n+1 列
C_m-1、C_m、C_m+1 行
41、42 发光二极管
SW1、SW2、T1、T1 晶体管
VSS 接地电压
e_1 第一控制信号
C 电容器
VDD 电源
s_1 扫描信号
d_M 影像数据
61-68 步骤
具体实施方式
以下公开内容提供了多种实施方式或例示,其能用以实现本公开内容的不同特征。下文所述的元件与配置的具体例子是用以简化本公开内容。当可想见,这些叙述仅为例示,其本意并非用于限制本公开内容。举例来说,在下文的描述中,将一第一特征形成于一第二特征上或之上,可能包含某些实施例其中所述的第一与第二特征彼此直接接触;且也可能包含某些实施例其中还有而外的元件形成于上述第一与第二特征之间,而使得第一与第二特征可能没有直接接触。此外,本公开内容可能会在多个实施例中重复使用元件符号和/或标号。此种重复使用乃是基于简洁与清楚的目的,且其本身不代表所讨论的不同实施例和/或组态之间的关系。
此外,当可理解,若将一部件描述为与另一部件「连接(connected to)」或「耦接(耦接至)」,则两者可直接连接或耦接,或两者间可能出现其他中间(intervening)部件。
图1为根据某些实施例的电致发光(EL)显示器10的示意图。
参照图1,该EL显示器10包含一主动区域12,其可包含一像素单元阵列,举例来说,所述像素单元阵列可通过多个像素单元排列于一N×M矩阵中,N与M分别是一自然数。为求简洁,图中仅标记例示性像素单元P_1M、P_2M、P_1M-1与P_2M-1。为了驱动像素单元,排列于列方向中的扫描线S_1至S_N是用以扫描像素单元的一或多相应列,而排列于行方向中的数据线D_1至D_M是用以提供影像数据至所述扫描线所选择的目标像素单元。在一实施例中,主动区域12中的每一像素单元包含三个子像素单元(图中未绘示),其可用以显示红色(R)、绿色(G)及蓝色(B)。此外,这三种子像素可排列于列的方向中。因此,数据线的数目为3×M。在另一实施例中,例如,子像素渲染(sub-pixel rendering,SPR)感应器,子像素单元的数目不限于三。
除了扫描线S_1至S_N以及数据线D_1至D_M之外,所述EL显示器10还包含控制线E_1至E_N/2,其是用以控制像素单元的发光状态。在本实施例中,控制线E_1至E_N/2于列方向中延伸,且平均排置于N列的像素单元中。如此一来,控制线E_1至E_N/2中的每一条可用以控制两列紧邻的像素单元。例如,第一控制线E_1可控制多个像素单元中分别耦接至扫描线S_1与S_2的第一与第二列像素单元,而第二控制线E_2则可控制多个像素单元中分别耦接至扫描线S_3与S_4的第三与第四列像素单元,依此类推。因此,控制线E_k可控制多个像素单元中分别耦接至扫描线S_2k-1与S_2k的紧邻的像素单元列,其中k为从1到N/2的自然数。如此一来,可通过控制线E_k来传送一单一控制信号E,以控制不同列上的像素单元的发光状态。此一驱动机制有利于将一像素单元中的控制器以及受其控制的EL装置制备为堆迭形式。因此,所述EL显示器10可有效地享有一有效率的面积成本(area cost)及一有弹性的布局设计。
图2为根据某些实施例,图1所示EL显示器10中的控制器CTR_A至CTR_F与其个别的EL装置EL_A至EL_F的概要布局。
参照图2,可在一半导体基材(图中未绘示)上形成所述的EL装置EL_A至EL_F,并可在半导体基材与EL装置EL_A至EL_F之间形成用以控制EL装置EL_A至EL_F的控制器CTR_A至CTR_F。上述控制器CTR_A与EL装置EL_A共同形成一像素单元,控制器CTR_B与EL装置EL_B共同形成另一像素单元,依此类推。为求简洁,图中仅绘示六个此种像素单元。所述EL装置EL_A至EL_F中每一个EL装置包含,例如,一电流驱动部件,其可以是一有机发光二极管(organic light emitting diode,OLED)、一微LED或一量子点LED(quantum dot LED,QLED)。此外,所述EL装置EL_A至EL_F中的每一者可用以显示红色(R)、绿色(G)或蓝色(B)。
所述控制器CTR_A、CTR_C与CTR_E排列在标示为R_n的第n列中,而所述控制器CTR_B、CTR_D与CTR_F标示为R_n+1的第n+1列中。此外,所述控制器CTR_A与CTR_B排列在标示为C_m-1的第(m-1)行中,所述控制器CTR_C与CTR_D排列在标示为C_m的第m行中,而所述控制器CTR_E与CTR_F排列在标示为C_m+1的第(m+1)行中。提供用于R_n列与R_n+1列的像素单元的控制线E_k。
此外,所述EL装置EL_B、EL_D与EL_F排列于第n列R_n中,而所述EL装置EL_A、EL_C与EL_E排列于第n+1列R_n+1中。此外,所述EL装置EL_B与EL_A排列于第(m-1)行C_m-1中,所述EL装置EL_D与EL_C排列于第m行C_m中,且所述EL装置EL_F与EL_E排列于第(m+1)行C_m+1中。如此一来,所述EL装置EL_B、EL_D与EL_F分别堆迭于上述控制器CTR_A、CTR_C与CTR_E上,而所述EL装置EL_A、EL_C与EL_E分别堆迭于上述控制器CTR_B、CTR_D与CTR_F中。在此种堆迭结构中,通过控制线E_k与导电通道(图中未绘示)将一控制信号传送至EL装置EL_A至EL_F。
图3为根据某些实施例,图1所示EL显示器10中例示性像素单元的概要透视图。
参照图3,控制器CTR_1M与相应的EL装置EL_1M形成了图1所示的例示性像素单元P_1M,而控制器CTR_2M与相应的EL装置EL_2M形成了图1所示的例示性像素单元P_2M。此外,所述的EL装置EL_1M与EL_2M分别堆迭于控制器CTR_2M与CTR_1M之上。
再者,控制器CTR_1M-1与相应的EL装置EL_1M-1形成了图1所示的例示性像素单元P_1M-1,而控制器CTR_2M-1与相应的EL装置EL_2M-1形成了图1所示的例示性像素单元P_2M-1。此外,所述EL装置EL_1M-1与EL_2M-1分别堆迭于控制器CTR_2M-1与CTR_1M-1上。
所述控制器CTR_1M用以通过扫描线S_1接收扫描信号,并通过数据线D_M接收影像数据。同理,所述控制器CTR_2M用以通过扫描线S_2接收扫描信号,并通过数据线D_M接收影像数据。同理,所述控制器CTR_1M-1用以通过扫描线S_1接收扫描信号,并通过数据线D_M-1接收影像数据。此外,所述控制器CTR_2M-1通过扫描线S_2用以接收扫描信号,并通过数据线D_M-1接收影像数据。控制线E_1以及扫描线S_1与S_2在和所述控制器CTR_1M、CTR_2M、CTR_1M-1与CTR_2M-1相关的导电层中彼此平行延伸。数据线D_M与D_M-1实质上与上述控制线E_1以及扫描线S_1与S_2垂直,并在和所述EL装置EL_1M、EL_2M、EL_1M-1与EL_2M-1相关的导电层中彼此平行延伸。
图4A为根据一实施例,图1所示EL显示器10中的例示性像素单元P_1M与P_2M的附图。
参照图4A,为了便于说明,在此将像素单元P_1M称为第一像素单元,其包含一第一控制器CTR_1M及一第一EL装置EL_1M。此外,所述第一EL装置EL_1M还包含一第一发光二极管41以及作为一第一开关的一晶体管SW1。在本实施例中,所述晶体管SW1包含一p-型晶体管,其可以是p-型金属氧化物半导体(p-type metal-oxide-semiconductor,PMOS)晶体管或p-型薄膜晶体管(thin film transistor,TFT)。此外,所述晶体管SW1的栅极是用以接收通过第一控制线E_1所传来的第一控制信号e_1。所述晶体管SW1的源极耦接至上述第一控制器CTR_1M。所述晶体管SW1的漏极耦接至第一发光二极管41的阳极。除此之外,所述第一发光二极管41的阴极耦接至电源VSS。在一实施例中,VSS的电压位准接近接地电压位准或为负电压位准,如负5伏特(-5V)。
在操作上,选择上述第一像素单元(即像素单元P_1M)作为目标像素单元时,会将第一影像数据储存在第一控制器CTR_1M中。在发光期间,第一控制信号e_1会开启晶体管SW1,使得一电流能够流经第一发光二极管41。所述电流的强度是由上述第一影像数据所决定。
同理,为了便于说明,在此将像素单元P_2M称为第二像素单元,其包含第二控制器CTR_2M与第二EL装置EL_2M。此外,所述第二EL装置EL_2M还包含一第二发光二极管42与作为第二开关的一晶体管SW2。在本实施例中,所述晶体管SW2包含一p-型晶体管,其可以是PMOS晶体管或p-型TFT。此外,所述晶体管SW2的栅极耦接至上述晶体管SW1的栅极,且用以接收通过第一控制线E_1所传来的第一控制信号e_1。所述晶体管SW2的源极耦接至上述第二控制器CTR_2M。所述晶体管SW2的漏极耦接至第二发光二极管42的阳极。除此之外,所述第二发光二极管42的阴极耦接至电源VSS。
在操作上,当选择上述第二像素单元(即像素单元P_2M)作为目标像心单元时,会将第二影像数据储存在第二控制器CTR_2M中。在发光期间,上述第一控制信号e_1会开晶体管SW2,使得一电流能够流经上述第二发光二极管42。所述电流的强度由第二影像数据所决定。
图4B为根据一实施例,图1所示的EL显示器10中例示性像素单元P_1M的电路图。
参照图4B,所述的第一像素单元P_1M的第一控制器CTR_1M包含一第一晶体管T1、一第二晶体管T2与一电容器C。又,图4A中所述的第二像素单元P_2M的第二控制器CTR_2M亦包含如图4B所示的一第一晶体管T1、一第二晶体管T2与一电容器C。为求简洁,仅范例说明该第一控制器CTR_1M,而第二控制器CTR_2M则不另赘述。上述第一晶体管T1与第二晶体管T2分别包含一p-型晶体管,其可以是PMOS晶体管或一p-型TFT。所述第一晶体管T1的栅极接收通过扫描线S_1而传送的扫描信号s_1。所述第一晶体管T1的源极接收通过数据线D_M而传送的影像数据d_M。所述第一晶体管T1的漏极耦接至电容器C的一端以及第二晶体管T2的栅极。本发明所述技术领域技术人员当可理解,晶体管的源极与漏极端可互换,其是取决于施加于该处的电压位准。又,所述第二晶体管T2的源极耦接至另一电源VDD。在一实施例中,VDD的电压位准约为5伏特(5V)。所述第二晶体管T2的漏极耦接至晶体管SW1的源极。第二晶体管T2是作为一驱动晶体管,当将其开启时,会使得一电流由VDD流向第一发光二极管41。此外,电容器C的另一端是耦接至VDD。上述像素单元P_1M的电路结构不限于所绘示的特定实施例。例如,第一控制器CTR_1M可包含更多晶体管或电容器,以执行所欲功能,譬如补偿功能以减轻第二晶体管T2中的阈值效应,此种阈值效应会减低EL显示器10中各像素单元亮度的一致性。
在操作上,当该扫描信号s_1开启上述第一晶体管T1时,会选择第一像素单元P_1M作为目标像素单元。其后,将一影像数据d_M储存于电容器C中。在发光期间,当该晶体管SW被第一控制信号e_1所开启时,流经第一发光二极管41的电流会使得所述第一发光二极管41发光,而此一光线的强度是由影像数据d_M所决定。
图5A为根据另一实施例,图1所示EL显示器10中例示性像素单元P_1M与P_2M的附图。
参照图5A,所述像素单元P_1M与P_2M的电路结构与上文参照图4A所述者相似,不同之处在于,例如,以n-型晶体管SW1及SW2取代前述的p-型晶体管。于一实施例中,n-型晶体管可包含n-型金属氧化物半导体(n-type metal-oxide-semiconductor,NMOS)晶体管或n-型薄膜晶体管(TFT)。
图5B是根据另一实施例,图1所示的EL显示器10中例示性像素单元P_1M的电路图。
参照图5B,所述像素单元P_1M的电路结构与上文参照图4B所述者相似,不同之处在于,例如,以n-型晶体管T1与T2取代前述的p-型晶体管。
图6为一流程图,其绘根据某些实施例用以驱动一EL显示器的方法。
参照图6,于操作61,提供一电致发光(EL)显示器。所述的EL显示器,譬如上文参照图1所示的EL显示器10,包含多个排列于N列与M行的矩阵中的像素单元,其中N与M为自然数。
在操作63,利用N条扫描线来扫描上述矩阵,以选择一或多个目标像素单元。
在操作65,通过M条数据线将影像数据提供给目标像素单元。
在操作67,通过控制线E_k将控制信号提供给目标像素单元。所述控制线E_k用以控制分别耦接至扫描线S_2k-1及S_2k的紧邻的像素单元列,其中k为从1到N/2的自然数。
其后,在操作68,上述所选像素单元中的第一像素单元的第一EL装置与及第二像素单元的第二EL装置分别根据所述影像数据发出光线。所述第一EL装置设置于用以控制第二EL装置的第二像素单元的第二控制器上方,且所述第二EL装置设置于用以控制第一EL装置的第一像素单元的第一控制器上方。
上文的叙述简要地提出了本发明某些实施例的特征,而使得本发明所属技术领域技术人员能够更全面地理解本公开内容的多种态样。本发明所属技术领域技术人员当可明了,其可轻易地利用本公开内容作为基础,来设计或变动其他制程与结构,以实现与此处所述的实施方式相同的目的和/或达到相同的优点。本发明所属技术领域技术人员应当明白,这些均等的实施方式仍属于本公开内容的精神与范围,且其可进行各种变更、替代与变动,而不会悖离本公开内容的精神与范围。
Claims (20)
1.一种电致发光显示器,包含:
多个像素单元,其排列于N列与M行的一矩阵中,N与M为自然数;
多个扫描线,用以选择目标像素单元;
多个数据线,用以提供数据至该目标像素单元;以及
一控制线,用以控制该矩阵中分别耦接至第(2k-1)条及第2k条扫描线的紧邻列的像素单元,k为从1到N/2的自然数。
2.如权利要求1所述的显示器,其中该控制线平行于该些扫描线而延伸。
3.如权利要求1所述的显示器,其中该些像素单元中的一第一像素单元包含一第一电致发光装置及用以控制该第一电致发光装置的一第一控制器,该些像素单元中的一第二像素单元包含一第二电致发光装置以及用以控制该第二电致发光装置的一第二控制器。
4.如权利要求3所述的显示器,其中该第一电致发光装置是设于该第二控制器上方,且该第二电致发光装置是设于该第一控制器上方。
5.如权利要求3所述的显示器,其中该第一电致发光装置包含一晶体管,且该晶体管的一栅极是用以接收通过该控制线所传送的一控制信号。
6.如权利要求3所述的显示器,其中该第二电致发光装置包含一晶体管,且该晶体管的一栅极是用以接收通过该控制线所传送的一控制信号。
7.如权利要求3所述的显示器,其中该第一电致发光装置与该第二电致发光装置是选自以下任一种:有机发光二极管、微LED及量子点LED。
8.如权利要求3所述的显示器,其中该第一控制器与该第二控制器皆包含一第一晶体管,其中该第一晶体管的一栅极是用以接收一扫描信号,且该第一晶体管的一源极是用以接收一影像数据。
9.如权利要求8所述的显示器,其中该第一控制器与该第二控制器皆包含一第二晶体管,分别用以允许一电流流向相应的该第一电致发光装置与该第二电致发光装置。
10.如权利要求9所述的显示器,其中该第一控制器与该第二控制器皆包含一电容器,用以储存该影像数据。
11.一种驱动电致发光显示器的方法,该电致发光显示器包含排列于一矩阵中的多个像素单元,该方法包含:
通过N扫描线来扫描该矩阵以选择目标像素单元,N为自然数;
通过M条数据线提供一影像数据至该目标像素单元,M为自然数;以及
通过一控制线提供一控制信号至该目标像素单元,其中该控制线控制该矩阵中分别耦接至第(2k-1)条及第2k条扫描线的紧邻列的像素单元,k为从1到N/2的自然数。
12.如权利要求11所述的方法,其中该控制线平行于该些扫描线而延伸。
13.如权利要求11所述的方法,还包含:
根据该影像数据,分别由一第一像素单元的一第一电致发光装置与一第二像素单元的一第二电致发光装置发出光线。
14.如权利要求13所述的方法,其中该第一电致发光装置是设于该第二像素单元的一第二控制器上方,且该第二电致发光装置是设于该第一像素单元的一第一控制器上方。
15.如权利要求14所述的方法,其中该第一电致发光装置包含一晶体管,且该晶体管的一栅极是用以接收通过该控制线所传送的一控制信号。
16.如权利要求14所述的方法,其中该第二电致发光装置包含一晶体管,且该晶体管的一栅极是用以接收通过该控制线所传送的一控制信号。
17.如权利要求14所述的方法,其中该第一电致发光装置与该第二电致发光装置是选自以下任一种:一有机发光二极管、一微LED及一量子点LED。
18.如权利要求14所述的方法,其中该第一控制器与该第二控制器皆包含一第一晶体管,其中该第一晶体管的一栅极是用以接收一扫描信号,该第一晶体管的一源极是用以接收一影像数据。
19.如权利要求18所述的方法,其中该第一控制器与该第二控制器皆包含一第二晶体管,分别用以允许一电流流向相应的该第一电致发光装置与该第二电致发光装置。
20.如权利要求19所述的方法,其中该第一控制器与该第二控制器皆包含一电容器,用以储存该影像数据。
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TW201832200A (zh) | 2018-09-01 |
US20180240401A1 (en) | 2018-08-23 |
TWI637373B (zh) | 2018-10-01 |
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