CN108456852A - 一种适用于高精密真空器件的非蒸散型吸气剂材料 - Google Patents
一种适用于高精密真空器件的非蒸散型吸气剂材料 Download PDFInfo
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- CN108456852A CN108456852A CN201810327377.6A CN201810327377A CN108456852A CN 108456852 A CN108456852 A CN 108456852A CN 201810327377 A CN201810327377 A CN 201810327377A CN 108456852 A CN108456852 A CN 108456852A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
本发明公开了一种适用于高精密真空器件的非蒸散型吸气剂材料,包括自下到上依次分布的衬底、非蒸散型吸气剂Ti‑Zr‑V‑Hf薄膜及Pd薄膜,该材料中Pd薄膜能够延长非蒸散型吸气剂Ti‑Zr‑V‑Hf薄膜的使用寿命。
Description
技术领域
本发明涉及一种非蒸散型吸气剂材料,具体涉及一种适用于高精密真空器件的非蒸散型吸气剂材料。
背景技术
原有的吸气剂材料的激活温度较高,极大限制了吸气剂材料的应用范围。具体而言,St707(ZrVFe)激活条件为加热至400℃且维持该温度45min方可激活该吸气剂薄膜,或者加热至350℃且维持该温度24h方可激活[C.B,P.Chiggiato,Pumping characteristicsof the St707nonevaporable getter(Zr 70V 24.6-Fe 5.4wt%,J.Vac.Sci.Technol.A14(6),Nov/Dec 1996(1996)];TiZrV吸气剂薄膜的激活条件为加热至220℃且维持该温度24h方可完全激活该吸气剂薄膜[J.Meng,X.T.Yang et al,Research of TiZrV PumpingCoatings on the Inner Walls of Vacuum Chamber,Physics Procedia 32(2012)865-868]。由于原有的吸气剂如目前最常用的吸气剂TiZrV的激活温度在220℃,这就导致铝合金管道可能会在激活的过程中发生管道形变,从而影响真空系统的安装精度,继而影响加速器管道内束流的运动轨迹,甚至影响束流的品质。2014年,Oleg等人发现Ti-Zr-Hf-V四元非蒸散型薄膜的激活温度可以降低到150℃-160℃[O.B.Malyshev,R.Valizadeh et al,Electron-stimulated desorption from polished and vacuum fired 316LN stainlesssteel coated with Ti-Zr-Hf-V,Journal of Vacuum Science&Technology A:Vacuum,Surfaces,and Films 32(6)(2014)、O.B.Malyshev,R.Valizadeh et al,Pumping andelectron-stimulated desorption properties of a dual-layer nonevaporablegetter,Journal of Vacuum Science&Technology A:Vacuum,Surfaces,and Films 34(6)(2016)]。Ti-Zr-Hf-V薄膜是迄今为止激活温度最低的非蒸散型薄膜,且具有优良的吸气性能,但是随着激活次数的增加,吸气剂表面与活性气体反应逐渐形成钝化层,从而导致吸气剂的活性慢慢消失。因此,如何解决吸气剂薄膜的寿命问题就成为了一个关键。
发明内容
本发明的目的在于克服上述现有技术的缺点,提供了一种适用于高精密真空器件的非蒸散型吸气剂材料,该材料中非蒸散型吸气剂Ti-Zr-V-Hf薄膜的使用寿命较长。
为达到上述目的,本发明所述的适用于高精密真空器件的非蒸散型吸气剂材料包括自下到上依次分布的衬底、非蒸散型吸气剂Ti-Zr-V-Hf薄膜及Pd薄膜。
所述衬底为不锈钢、无氧铜或者硅片等适合磁控溅射的衬底材料。
采用磁控溅射法在衬底上依次制备非蒸散型吸气剂Ti-Zr-V-Hf薄膜及Pd薄膜。
本发明具有以下有益效果:
本发明所述的适用于高精密真空器件的非蒸散型吸气剂材料由衬底、非蒸散型吸气剂Ti-Zr-V-Hf薄膜及Pd薄膜,其中,Pd薄膜的性能极为稳定,从而可以有效的防止非蒸散型吸气剂Ti-Zr-V-Hf薄膜表面钝化层的形成,从理论角度看,非蒸散型吸气剂Ti-Zr-V-Hf薄膜具有无限的使用寿命,另外,Pd薄膜可以提高材料对H2的吸气性能,对于高真空而言,H2很难采用机械抽气的方式排除,采用Pd薄膜可以使器件维持较好的真空度,降低器件发生故障的概率。
附图说明
图1为本发明的结构示意图。
其中,1为Pd薄膜、2为非蒸散型吸气剂Ti-Zr-V-Hf薄膜、3为衬底。
具体实施方式
下面结合附图对本发明做进一步详细描述:
参考图1,本发明所述的适用于高精密真空器件的非蒸散型吸气剂材料包括自下到上依次分布的衬底3、非蒸散型吸气剂Ti-Zr-V-Hf薄膜2及Pd薄膜1,其中,所述衬底3为不锈钢、无氧铜或者硅片。
非蒸散型吸气剂Ti-Zr-V-Hf薄膜2具有较低的激活温度,低的激活温度有利于扩大该薄膜的应用范围,比如以往的非蒸散型吸气剂如Ti-Zr-V薄膜,其激活温度为220℃,由于激活温度偏高,无法使用在铝合金管道上,易造成铝合金管道的变形,从而影响铝合金管道中粒子束流的品质。
在非蒸散型吸气剂Ti-Zr-V-Hf薄膜2上镀一层Pd薄膜1有两个作用:第一个作用是防止非蒸散型吸气剂Ti-Zr-V-Hf薄膜2表面钝化层的形成,Pd的性能极为稳定,从理论角度看,非蒸散型吸气剂Ti-Zr-V-Hf薄膜2具有无限的使用寿命;第二个作用是Pd薄膜1可以提高对H2的吸气性能,对于高真空而言,H2很难用机械抽气的方式排除,因此,通常会选择吸气剂来对H2进行抽除。其次,非蒸散型吸气剂Ti-Zr-V-Hf薄膜2具有激活温度较低的特点,因此本发明提出的适用于高精密真空器件的非蒸散型吸气剂材料,对于维持精密真空器件中的良好真空度,为精密真空器件的正常运行提供了更好的工作环境,以降低精密真空器件发生故障的概率。
最后,要获得高质量的非蒸散型吸气剂Ti-Zr-V-Hf薄膜2及Pd薄膜1,需要选取合适的镀膜方法,现有的制备薄膜方法有磁控溅射、脉冲激光沉积、离子束溅射及化学气相沉积等,各种方法各有其优缺点,从薄膜的成膜质量、成膜速率及成膜附着性等方面考虑,选用磁控溅射法制备非蒸散型吸气剂Ti-Zr-V-Hf薄膜2及Pd薄膜1。
Claims (3)
1.一种适用于高精密真空器件的非蒸散型吸气剂材料,其特征在于,包括自下到上依次分布的衬底(3)、非蒸散型吸气剂Ti-Zr-V-Hf薄膜(2)及Pd薄膜(1)。
2.根据权利要求1所述的适用于高精密真空器件的非蒸散型吸气剂材料,其特征在于,所述衬底(3)为不锈钢、无氧铜或者硅片。
3.根据权利要求1所述的适用于高精密真空器件的非蒸散型吸气剂材料,其特征在于,采用磁控溅射法在衬底(3)上依次制备非蒸散型吸气剂Ti-Zr-V-Hf薄膜(2)及Pd薄膜(1)。
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CN112226737A (zh) * | 2020-09-16 | 2021-01-15 | 上海晶维材料科技有限公司 | 一种稀土元素合金化法提高钛锆固溶体合金靶材性能的方法 |
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Cited By (1)
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CN112226737A (zh) * | 2020-09-16 | 2021-01-15 | 上海晶维材料科技有限公司 | 一种稀土元素合金化法提高钛锆固溶体合金靶材性能的方法 |
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