CN108455982A - A kind of ultra-thin type ceramic casting method and its device systems - Google Patents
A kind of ultra-thin type ceramic casting method and its device systems Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 56
- 238000005266 casting Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000000137 annealing Methods 0.000 claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000007740 vapor deposition Methods 0.000 claims abstract description 13
- 239000000084 colloidal system Substances 0.000 claims abstract description 10
- 239000002562 thickening agent Substances 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 claims abstract description 4
- 238000003980 solgel method Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 32
- 230000007704 transition Effects 0.000 claims description 12
- 238000007766 curtain coating Methods 0.000 claims description 5
- -1 mantoquita Chemical class 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 229920002125 Sokalan® Polymers 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 239000005062 Polybutadiene Substances 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 229920002396 Polyurea Polymers 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 159000000013 aluminium salts Chemical class 0.000 claims description 2
- 229910000329 aluminium sulfate Inorganic materials 0.000 claims description 2
- 159000000009 barium salts Chemical class 0.000 claims description 2
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 claims description 2
- 159000000007 calcium salts Chemical class 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims description 2
- 229960001631 carbomer Drugs 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229920001971 elastomer Polymers 0.000 claims description 2
- 239000000839 emulsion Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000012188 paraffin wax Substances 0.000 claims description 2
- 229920002401 polyacrylamide Polymers 0.000 claims description 2
- 229920000058 polyacrylate Polymers 0.000 claims description 2
- 229920002857 polybutadiene Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000005060 rubber Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 159000000008 strontium salts Chemical class 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 150000003608 titanium Chemical class 0.000 claims description 2
- 239000001993 wax Substances 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 150000003751 zinc Chemical class 0.000 claims description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims 1
- 150000002815 nickel Chemical class 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 17
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000007651 thermal printing Methods 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
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- H—ELECTRICITY
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- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
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Abstract
The invention discloses a kind of ultra-thin type ceramic casting method and its device systems, first convenient source is dissolved in the solution using sol gel process, the solution colloid that viscosity is 100~100000cps is configured to after addition thickener, solution colloid is placed in casting machine again, casting film-forming, 20~200 microns of film thickness are carried out in the substrate with sacrificial layer；It is sent in annealing furnace and is made annealing treatment by transmission belt again, the ceramic membrane layer thickness after annealing is 10nm；It is sent to electrode in vapor deposition chamber by transmission belt again to be deposited, 10~2000nm of thickness of electrode；Casting machine is sent back to by transmission belt again to be cast again, so be repeated, until film layer is required 1~10000 layer；Sacrificial layer is finally removed, ceramic component is cut into.The present invention solves the technical barrier of ceramic electronic component miniaturization, and of low cost, theory is advanced, has pushed the development of electronic technology.
Description
Technical field
A kind of ceramic composition that the invention belongs to a kind of characterized by ingredient, and in particular to ultra-thin type ceramic casting method
And its corresponding device systems.
Background technology
The development trend of being miniaturized, is integrated of hyundai electronics component, low noise and multifunction is further speeded up, and is led
Cause coming out one after another for many novel encapsulated technologies.It is mainly characterized by no lead (or short leg), chip type, pitch and more
Pin.Novel encapsulated technology is combined with slice component surface installation technique, Micro-package technique of new generation has been started, as micro-group
Therefore dress ceramic substrate industry used also develops rapidly.And the tape casting exactly adapts to the modern times that this needs grows up
Shaping method of ceramics.In addition to for the substrate of the integrated antenna package of high integration and substrate material, curtain coating ceramic product is also wide
It is general to be applied to film hybrid integrated circuit (such as SPC telephone exchange, mobile phone, igniter for automobile, facsimile machine thermal printing head
Deng), adjustable potentiometer (such as colour television set and display focus variable rheostat, cermet potentiometer), plate resistor (such as net
Network resistance, surface mount plate resistor etc.), glass copper-clad plate (being mainly used for great-power electronic electrical device), flush conductor refrigeration
The substrate carrier material of device and multiple sensors.With electronic technology development, the size of the electronic component needed is smaller and smaller,
And the cast layer thickness limit that casting method and device systems traditional at present can be prepared cannot meet all in 1000nm or more
The active demand of electronic component miniaturization.Based on this present situation, the present invention develops a kind of novel superthin layer ceramics curtain coating
Method and its corresponding device systems.Through the invention, it may make the thickness most low energy of curtain coating ceramic layer to reach 10nm or so, have
Hope the technical barrier for solving ceramic electronic component miniaturization.
Invention content
The purpose of the present invention, the cast film layer limit that can be prepared in view of traditional at present casting method and device systems
Thickness all in 1000nm or more, cannot meet the active demand of electronic component miniaturization, provide a kind of ultra-thin type ceramic curtain coating
Method and its device systems.
The present invention is achieved by following technical solution.
A kind of ultra-thin type ceramic casting method has following steps：
(1) convenient source needed for ceramic membrane will be prepared using sol gel process dissolving in the solution, be configured to stable
The concentration of solvent solution, the solution is controlled by adjusting the additive amount of solute raw material；
The viscosity of solution is controlled by adding thickener into solvent, is configured to the solution colloid of required viscosity, this is molten
The viscosity of liquogel is 100~100000cps；
(2) the solution colloid of step (1) is placed in casting machine, casting film-forming is carried out in the substrate with sacrificial layer；
The thin film layer thickness of casting film-forming is 20~200 microns；
(3) film that step (2) has been cast is transported to by transmission belt in annealing furnace and is made annealing treatment, made annealing treatment
The minimum thickness of ceramic film afterwards is 10nm.
(4) ceramic film after the annealing of step (3) is transported to the vapor deposition chamber of device systems by transmission belt
Middle progress electrode vapor deposition, between 10~2000nm, electrode pattern is controlled thickness of electrode by mask method；
(5) ceramic film of the step (4) with electrode is transported to by transmission belt in casting machine and is cast again,
And so repeat, until the number of plies for reaching required ceramic film, the number of plies of the ceramic film is 1~10000 layer；
(6) after step (5), sacrificial layer is removed, realizes the stripping between multi-layer ceramics film layer and substrate, it is most laggard
Row cutting is to obtain required multi-layer capacitor or multiplayer microwave ceramic component.
The convenient source of the step (1) is the metal of barium salt, titanium salt, aluminium salt, mantoquita, strontium salt, calcium salt, zinc salt, nickel salt
Salt.
The thickener of the step (1) is polyacrylamide, polyvinyl alcohol, polyvinylpyrrolidone, polyethylene glycol oxide, changes
Property paraffin resin, carbomer, polyacrylic acid, Polyacrylate Emulsion, butadiene rubber, butadiene-styrene rubber, polyurethane, modification
Polyureas or low-molecular polyethylene wax.
The substrate of the step (2) is silica or simple glass substrate；The sacrificial layer is ZnO or Al2O3Easily carve
The material of erosion.
The annealing furnace of the step (3) is ambient anneal stove, vacuum annealing furnace or common annealing stove.
A kind of device systems of ultra-thin type ceramic casting method, including casting machine, transmission belt and annealing furnace, feature exist
In casting machine (1) is connected by transmission belt A (2) with annealing furnace (3), and annealing furnace (3) by transmission belt B (4), passed through again
Degree room A (5) is deposited chamber (6) and is connected, and vapor deposition chamber (6) is connected to casting machine (1) by Transition Room B (7), through transmission belt C (8),
Form a cycle；
Solution colloid carries out casting film-forming by casting machine (1), and the film being cast is transported to by transmission belt A (2) and is moved back
Stove is made annealing treatment in (3), and the film after annealing enters vapor deposition chamber through transmission belt B (4), by Transition Room A (5) again
(6) electrode vapor deposition is carried out in, then by Transition Room B (7), is returned to casting machine (1) through transmission belt C (8) and be cast again, so
Cycle is until the number of plies for reaching required ceramic film.
Vacuum degree≤50Pa of the vapor deposition chamber (6).
The ultra-thin type ceramic casting method and its device systems of the present invention makes the thickness for being cast ceramic layer is minimum to reach
10nm or so solves the technical barrier of ceramic electronic component miniaturization, and of low cost, theory is advanced, pushes electronic technology
Development.
Description of the drawings
Fig. 1 is the process flow chart of ultra-thin type ceramic casting method of the present invention；
Fig. 2 is the process structure schematic diagram of ultra-thin type ceramic casting method device systems of the present invention.
Reference numeral in Fig. 2 is as follows：
1 --- casting machine 2 --- transmission belt A
3 --- annealing furnace 4 --- transmission belt B
Chamber is deposited in 5 --- transition chamber A 6 ---
7 --- transition chamber B 8 --- transmission belt C
Specific implementation mode
Further detailed description, equipment system of the invention are done to the present invention with reference to Fig. 1, Fig. 2 and specific embodiment
System is assembled using common process equipment and process.
Embodiment 1
(1) barium nitrate needed for ceramic membrane will be prepared and butyl titanate raw material is dissolved in aqueous solution using sol gel process
In, be configured to stable solution, the concentration of the solution is controlled by adjusting the additive amount of solute raw material, solution it is a concentration of
1%；
The viscosity of solution is controlled by adding thickener polyvinyl alcohol into solvent, is configured to the solution glue of required viscosity
The viscosity of body, the solution colloid is 5000cps；
(2) the solution colloid of step (1) is placed in casting machine 1, casting film-forming is carried out in the substrate with sacrificial layer,
Substrate selects Si substrates, sacrificial layer to select ZnO material, and the thickness of the film layer of casting film-forming is 30 microns；
(3) film that step (2) has been cast is transported to by transmission belt A2 in annealing furnace 3 and is made annealing treatment, annealed
The purpose one of processing is the solution and curing agent removed in cast layer, second is that realizing the crystallization of ceramic film；After annealing
The thickness of ceramic film be 200nm, the thickness of ceramic film is controlled by the thickness of the concentration of solution and cast layer.
The annealing furnace is vacuum annealing furnace.
(4) ceramic film after annealing in step (3) is transported to steaming by transmission belt B4 and Transition Room A (5)
It plates and carries out electrode vapor deposition in chamber 6, thickness of electrode 100nm, electrode pattern is controlled by mask method；It is deposited before and after chamber
Transition chamber effect be in order to protect thin layers of ceramic disengaging back cavity in vacuum degree.
(5) ceramic film that electrode is carried in step (4) is transported to by Transition Room B7, transmission belt C8 in casting machine
It is cast again, and repeatedly repeatedly, until reaching ceramic film and being 10 layers；
(6) after step (5), sacrificial layer is removed, realizes the stripping between multi-layer ceramics film layer and substrate, it is most laggard
Row cutting is to obtain required multi-layer capacity device.
Claims (7)
1. a kind of ultra-thin type ceramic casting method has following steps：
(1) convenient source needed for ceramic membrane will be prepared using sol gel process dissolving in the solution, is configured to stable solvent
The concentration of solution, the solution is controlled by adjusting the additive amount of solute raw material；
The viscosity of solution is controlled by adding thickener into solvent, is configured to the solution colloid of required viscosity, the solution glue
The viscosity of body is 100~100000cps；
(2) the solution colloid of step (1) is placed in casting machine, casting film-forming is carried out in the substrate with sacrificial layer；Curtain coating
The thin film layer thickness of film forming is 20~200 microns；
(3) film that step (2) has been cast is transported to by transmission belt in annealing furnace and is made annealing treatment, after annealing
The minimum thickness of ceramic film is 10nm.
(4) ceramic film after the annealing of step (3) is transported to by transmission belt in the vapor deposition chamber of device systems into
Row electrode is deposited, and between 10~2000nm, electrode pattern is controlled thickness of electrode by mask method；
(5) ceramic film of the step (4) with electrode is delivered back by transmission belt in casting machine and is cast again, and
It so repeats, until the number of plies for reaching required ceramic film, the number of plies of the ceramic film is 1~10000 layer；
(6) after step (5), sacrificial layer is removed, the stripping between multi-layer ceramics film layer and substrate is realized, is finally cut
It cuts to obtain required multi-layer capacitor or multiplayer microwave ceramic component.
2. a kind of ultra-thin type ceramic casting method according to claim 1, which is characterized in that the step (1) it is normal
Rule raw material is the metal salt of barium salt, titanium salt, aluminium salt, mantoquita, strontium salt, calcium salt, zinc salt, nickel salt.
3. a kind of ultra-thin type ceramic casting method according to claim 1, which is characterized in that the increasing of the step (1)
Thick dose is polyacrylamide, polyvinyl alcohol, polyvinylpyrrolidone, polyethylene glycol oxide, modified paraffin resin, and carbomer gathers
Acrylic acid, Polyacrylate Emulsion, butadiene rubber, butadiene-styrene rubber, polyurethane, modified polyurea or low molecular polyethylene
Wax.
4. a kind of ultra-thin type ceramic casting method according to claim 1, which is characterized in that the base of the step (2)
Bottom is silica or simple glass substrate；The sacrificial layer is ZnO or Al2O3The material easily etched.
5. a kind of ultra-thin type ceramic casting method according to claim 1, which is characterized in that step (3) are moved back
Stove is ambient anneal stove, vacuum annealing furnace or common annealing stove.
6. a kind of device systems of ultra-thin type ceramic casting method described in claim 1, including casting machine, transmission belt and annealing
Stove, which is characterized in that casting machine (1) is connected by transmission belt A (2) with annealing furnace (3), and annealing furnace (3) passes through transmission belt B
(4), chamber (6) is deposited by Transition Room A (5) again to be connected, vapor deposition chamber (6) is connected by Transition Room B (7), through transmission belt C (8)
To casting machine (1), a cycle is formed；
Solution colloid carries out casting film-forming by casting machine (1), and the film being cast is transported to annealing furnace by transmission belt A (2)
(3) it is made annealing treatment in, the film after annealing enters vapor deposition chamber (6) through transmission belt B (4), by Transition Room A (5) again
Middle progress electrode vapor deposition, then by Transition Room B (7), return to casting machine (1) through transmission belt C (8) and be cast again, so followed
Ring is until the number of plies for reaching required ceramic film.
7. a kind of device systems of ultra-thin type ceramic casting method according to claim 4, which is characterized in that the vapor deposition
Vacuum degree≤50Pa of chamber (6).
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