CN108448221B - A Broadband Multilayer Microstrip Butler Beamforming Network Matrix Device - Google Patents

A Broadband Multilayer Microstrip Butler Beamforming Network Matrix Device Download PDF

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CN108448221B
CN108448221B CN201810192860.8A CN201810192860A CN108448221B CN 108448221 B CN108448221 B CN 108448221B CN 201810192860 A CN201810192860 A CN 201810192860A CN 108448221 B CN108448221 B CN 108448221B
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directional coupler
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tight coupling
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CN108448221A (en
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宁俊松
王占平
补世荣
曾成
陈柳
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University of Electronic Science and Technology of China
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00Coupling devices of the waveguide type
    • H01P5/12Coupling devices having more than two ports
    • H01P5/16Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/18Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers

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Abstract

The invention discloses a broadband multilayer microstrip Butler beam forming network matrix device, and belongs to the technical field of electronic communication. The broadband multilayer microstrip Butler beam forming network matrix has the advantages of easiness in manufacturing, low cost, high port phase shifting precision, small port amplitude fluctuation, low loss, wide working frequency, high port isolation and the like, and can meet the requirements of modern civil mobile communication systems and military radar systems on a new generation of multi-beam array antennas and antenna tests.

Description

一种宽带多层微带Butler波束成形网络矩阵装置A Broadband Multilayer Microstrip Butler Beamforming Network Matrix Device

技术领域technical field

本发明属于电子通信技术领域。The invention belongs to the technical field of electronic communication.

背景技术Background technique

随着通信技术的高速发展,多波束天线较为简单的实现和准确的指向使其在雷达和通讯系统特别是4G、5G移动通讯系统中扮演着越来越重要的角色。多波束天线的核心在于波束形成电路馈电网络,而对于Butler矩阵由于结构简单、插入损耗低、便于制作等优点,具有很大的应用前景。With the rapid development of communication technology, the simpler implementation and accurate pointing of multi-beam antennas make it play an increasingly important role in radar and communication systems, especially 4G and 5G mobile communication systems. The core of the multi-beam antenna is the beam forming circuit feed network, and the Butler matrix has great application prospects due to its simple structure, low insertion loss, and easy fabrication.

目前现有的Butler矩阵技术主要是由多个单层微带耦合器和传输微带线移相器构成,以改变各输出端口信号的幅度和相位,馈入相控阵天线后,实现波束成形和功率谱估计的信号处理功能,来确定信号来波方向,并进一步对信号进行精确定向。技术简单但具有工作频率窄、端口移相误差大、端口幅度平坦度差等缺陷,导致平台通用性差,应用场景狭小。本发明利用多层印制板技术发展了一种平面小型化、易制作、低成本、高性能、宽频带覆盖的多层微带Butler波束成形网络矩阵,可广泛地应用于多场景下的多波束天线波束形成电路馈电网络。At present, the existing Butler matrix technology is mainly composed of multiple single-layer microstrip couplers and transmission microstrip line phase shifters to change the amplitude and phase of each output port signal. After feeding into the phased array antenna, beamforming is realized. And the signal processing function of power spectrum estimation to determine the direction of the incoming wave of the signal, and further orient the signal accurately. The technology is simple but has defects such as narrow operating frequency, large port phase shift error, and poor port amplitude flatness, resulting in poor platform versatility and narrow application scenarios. The invention uses the multi-layer printed board technology to develop a multi-layer microstrip Butler beam-forming network matrix that is miniaturized, easy to manufacture, low-cost, high-performance, and covers a wide frequency band, and can be widely used in multiple scenarios in multiple scenarios. Beam antenna beamforming circuit feed network.

发明内容SUMMARY OF THE INVENTION

本发明以解决目前现有Butler矩阵工作频率窄、端口移相误差大、端口幅度平坦度差等缺陷,所实现的宽带多层微带Butler波束成形网络矩阵具有易制作、低成本、端口移相精度高、端口幅度波动小、损耗低、工作频率宽、端口隔离度高等优点,可以满足现代民用移动通讯系统和军事雷达系统对新一代多波束阵列天线及天线测试的要求。The invention solves the defects of the current existing Butler matrix, such as narrow operating frequency, large port phase shift error, poor port amplitude flatness, etc. The realized broadband multi-layer microstrip Butler beam forming network matrix has the advantages of easy fabrication, low cost, and port phase shift. It has the advantages of high precision, small port amplitude fluctuation, low loss, wide operating frequency and high port isolation, which can meet the requirements of modern civil mobile communication systems and military radar systems for the new generation of multi-beam array antennas and antenna testing.

本发明技术方案为一种宽带多层微带Butler波束成形网络矩阵装置,其结构如图1所示,该装置包括:上金属地、第一介质层、电路基板、设置于基板上的Butler波束成形网络矩阵、第二介质层、下金属地;所述设置于基板上的Butler波束成形网络矩阵如图2所示,包括:第一90°3dB宽带紧耦合定向耦合器,第一~第三180°3dB宽带紧耦合定向耦合器;所述第一90°3dB宽带紧耦合定向耦合器包括:A、B两个输出端口和C、D两个输入端口,所述180°3dB宽带紧耦合定向耦合器包括:A、B两个输出端口和△、∑两个输入端口;所述第一90°3dB宽带紧耦合定向耦合器的A端口与第一180°3dB宽带紧耦合定向耦合器的△端口连接,第一90°3dB宽带紧耦合定向耦合器的B端口与第二180°3dB宽带紧耦合定向耦合器的△端口连接;所述第三180°3dB宽带紧耦合定向耦合器的A端口与第一180°3dB宽带紧耦合定向耦合器的∑端口连接,第三180°3dB宽带紧耦合定向耦合器的B端口与第二180°3dB宽带紧耦合定向耦合器的∑端口连接;所述第一90°3dB宽带紧耦合定向耦合器和第三180°3dB宽带紧耦合定向耦合器的所有输入端口作为宽带多层微带Butler波束成形网络矩阵装置的馈电端口,所述第一和第二180°3dB宽带紧耦合定向耦合器的所有输出端口为宽带多层微带Butler波束成形网络矩阵装置天线端口。The technical solution of the present invention is a broadband multi-layer microstrip Butler beam forming network matrix device. A forming network matrix, a second dielectric layer, and a lower metal ground; the Butler beam forming network matrix disposed on the substrate is shown in Figure 2, including: a first 90° 3dB broadband tight-coupling directional coupler, the first to third 180° 3dB broadband tight coupling directional coupler; the first 90° 3dB broadband tight coupling directional coupler includes: two output ports A and B and two input ports C and D, the 180° 3dB broadband tight coupling directional coupler includes: The coupler includes: two output ports A and B and two input ports △ and Σ; the A port of the first 90°3dB wideband tight coupling directional coupler and the △ port of the first 180°3dB wideband tight coupling directional coupler Port connection, the B port of the first 90° 3dB broadband tight coupling directional coupler is connected to the △ port of the second 180° 3dB broadband tight coupling directional coupler; the A port of the third 180° 3dB broadband tight coupling directional coupler It is connected with the Σ port of the first 180° 3dB broadband tight coupling directional coupler, and the B port of the third 180° 3dB broadband tight coupling directional coupler is connected with the Σ port of the second 180° 3dB broadband tight coupling directional coupler; the All input ports of the first 90° 3dB broadband tightly coupled directional coupler and the third 180° 3dB broadband tightly coupled directional coupler are used as feed ports for the broadband multi-layer microstrip Butler beamforming network matrix device, the first and third All output ports of the two 180° 3dB broadband tightly coupled directional couplers are broadband multi-layer microstrip Butler beamforming network matrix device antenna ports.

其特征在于所述第一90°3dB宽带紧耦合定向耦合器,如图3所示包括:电路基板和设置于电路基板上表面和下表面的金属微带线,所述上表面和下表面的金属微带线为两个渐变紧耦合8.34dB定向耦合器级联构成,形状相同设置位置相反;上表面的金属微带线馈电端口为第一90°3dB宽带紧耦合定向耦合器的C端口,天线端口为第一90°3dB宽带紧耦合定向耦合器的A端口;下表面金属微带线馈电端口为第一90°3dB宽带紧耦合定向耦合器的D端口,天线端口为第一90°3dB宽带紧耦合定向耦合器的B端口。It is characterized in that the first 90° 3dB broadband tight-coupling directional coupler, as shown in FIG. 3 , includes: a circuit substrate and metal microstrip lines arranged on the upper surface and the lower surface of the circuit substrate, and the upper and lower surfaces of the The metal microstrip line is composed of two gradual tight coupling 8.34dB directional couplers cascaded, with the same shape and opposite positions; the feeding port of the metal microstrip line on the upper surface is the C port of the first 90°3dB broadband tight coupling directional coupler , the antenna port is the A port of the first 90°3dB broadband tight coupling directional coupler; the lower surface metal microstrip line feed port is the D port of the first 90°3dB broadband tight coupling directional coupler, and the antenna port is the first 90 °3dB broadband close-coupled directional coupler B port.

所述第一~第三180°3dB宽带紧耦合定向耦合器,如图4所示包括:第二90°3dB宽带紧耦合定向耦合器和90°Schiffman宽带紧耦合差分移相器;所述90°Schiffman宽带紧耦合差分移相器包括:参考微带传输线和90°移相器;所述参考微带传输线为设置于电路基板上表面的蛇形曲折微带线,一端与第二90°3dB宽带紧耦合定向耦合器的A端口连接,另一端作为输出;所述90°移相器包括位于电路基板上表面和下表面的三段式渐变耦合线,位于电路基板下表面的三段式渐变耦合线的一端连接第二90°3dB宽带紧耦合定向耦合器的B端口,另一端通过金属化过孔连接位于电路基板上表面的三段式渐变耦合线的一端,另一端作为输出;所述第二90°3dB宽带紧耦合定向耦合器的C、D端口分别为180°3dB宽带紧耦合定向耦合器的△、∑端口,所述蛇形曲折微带线的输出端和位于电路基板上表面的三段式渐变耦合线的输出端分别为180°3dB宽带紧耦合定向耦合器的A、B两个端口。The first to third 180° 3dB broadband tight coupling directional couplers, as shown in FIG. 4 , include: a second 90° 3dB broadband tight coupling directional coupler and a 90° Schiffman broadband tight coupling differential phase shifter; °Schiffman broadband tightly coupled differential phase shifter includes: a reference microstrip transmission line and a 90° phase shifter; the reference microstrip transmission line is a serpentine zigzag microstrip line arranged on the upper surface of the circuit substrate, and one end is 90°3dB with the second The A port of the broadband tightly coupled directional coupler is connected, and the other end is used as output; the 90° phase shifter includes three-segment gradient coupling lines located on the upper and lower surfaces of the circuit substrate, and a three-segment gradient located on the lower surface of the circuit substrate. One end of the coupling line is connected to the B port of the second 90°3dB broadband tight coupling directional coupler, the other end is connected to one end of the three-segment gradient coupling line located on the upper surface of the circuit substrate through a metallized via, and the other end is used as an output; the The C and D ports of the second 90°3dB broadband close-coupled directional coupler are respectively the Δ and Σ ports of the 180°3dB broadband close-coupled directional coupler. The output end of the serpentine microstrip line is located on the upper surface of the circuit substrate. The output ends of the three-section gradient coupling line are the A and B ports of the 180° 3dB broadband tight coupling directional coupler.

进一步的,所述90°移相器中位于电路基板上表面和下表面的三段式渐变耦合线投影为“V”形,所述三段式渐变耦合线的一侧齐平,另一侧的中段凸起,宽度大于前段和后段,所述中段的凸起位于电路基板上下表面的三段式渐变耦合线投影“V”形的外侧,且每段耦合线的长度都为

Figure GDA0002544661180000021
其中λg为Butler矩阵的工作中心频率。Further, the three-segment gradient coupling line located on the upper surface and the lower surface of the circuit substrate in the 90° phase shifter is projected into a "V" shape, one side of the three-segment gradient coupling line is flush, and the other side is flush. The middle section of the bump is wider than the front section and the rear section. The middle section of the bump is located on the outside of the three-section gradient coupling line projected "V" shape on the upper and lower surfaces of the circuit substrate, and the length of each section of the coupling line is
Figure GDA0002544661180000021
where λ g is the working center frequency of the Butler matrix.

进一步的,所述第一或第二90°3dB宽带紧耦合定向耦合器中的渐变紧耦合8.34dB定向耦合器包括:输入段、过渡段、输出段,其中输入段包括:50欧姆矩形传输线输入端口、尖顶形阻抗渐变过渡传输线枝节、输入枝节微带线,50欧姆矩形传输线输入端口与输入枝节微带线垂直,尖顶形阻抗渐变过渡传输线枝节为输入枝节微带线在与输入端口连接处的向外延伸;所述输入段与过渡段形成钝角连接,输入段与输出段成中心对称;所述两个渐变紧耦合8.34dB定向耦合器级联后成“U”形,级联后的输入端口与输出端口位于“U”形的外侧。Further, the gradual tight coupling 8.34dB directional coupler in the first or second 90° 3dB broadband tight coupling directional coupler includes: an input section, a transition section, and an output section, wherein the input section includes: a 50-ohm rectangular transmission line input Port, tip-shaped impedance gradient transition transmission line branch, input branch microstrip line, the 50 ohm rectangular transmission line input port is perpendicular to the input branch microstrip line, and the tip-shaped impedance gradient transition transmission line branch is the input branch microstrip line at the connection with the input port. Extend outward; the input section and the transition section form an obtuse-angle connection, and the input section and the output section are center-symmetrical; the two gradual tight coupling 8.34dB directional couplers are cascaded into a "U" shape, and the cascaded input Ports and output ports are located on the outside of the "U" shape.

进一步的,所述蛇形曲折的参考微带传输线从输入端起依次包括:第一“U”形弯折、第二“U”形弯折、第三“U”形弯折、第四“U”形弯折、第一直角弯折、第二直角弯折、第五“U”形弯折、第六“U”形弯折、第七“U”形弯折、第三直角弯折、第四直角弯折、第八“U”形弯折、第五直角弯折、第六直角弯折;所述第一和第二直角弯折的弯折方向相反;所述第三和第四直角弯折的弯折方向相反;所述第五和第六直角弯折的弯折方向相反,整个参考微带传输线长度为

Figure GDA0002544661180000031
Further, the serpentine reference microstrip transmission line sequentially includes from the input end: a first "U"-shaped bend, a second "U"-shaped bend, a third "U"-shaped bend, and a fourth "U"-shaped bend. U" bend, first right angle bend, second right angle bend, fifth "U" bend, sixth "U" bend, seventh "U" bend, third right angle bend , the fourth right-angle bend, the eighth "U"-shaped bend, the fifth right-angle bend, and the sixth right-angle bend; the bending directions of the first and second right-angle bends are opposite; The bending directions of the four right-angle bends are opposite; the bending directions of the fifth and sixth right-angle bends are opposite, and the length of the entire reference microstrip transmission line is
Figure GDA0002544661180000031

进一步的,所述第一90°3dB宽带紧耦合定向耦合器的A端口与第一180°3dB宽带紧耦合定向耦合器的△端口通过“U”形的弯折微带线连接;所述第一90°3dB宽带紧耦合定向耦合器的B端口连接微带线经过传输线交叉点后通过金属化过孔与第二180°3dB宽带紧耦合定向耦合器的△端口连接;所述第三180°3dB宽带紧耦合定向耦合器的A端口连接微带线经过传输线交叉点再连接一“U”形的弯折微带线后通过金属化过孔与第一180°3dB宽带紧耦合定向耦合器的∑端口连接;所述第三180°3dB宽带紧耦合定向耦合器的B端口连接第一段微带线后通过金属化过孔连接第二段微带线后与第二180°3dB宽带紧耦合定向耦合器的∑端口连接,所述第一段与第二段微带线投影成“U”形。Further, the A port of the first 90° 3dB broadband tight coupling directional coupler is connected to the Δ port of the first 180° 3dB broadband tight coupling directional coupler through a "U"-shaped bent microstrip line; The B port of a 90°3dB broadband tight-coupling directional coupler is connected to the microstrip line through the intersection of the transmission line and is connected to the △ port of the second 180°3dB broadband tight-coupling directional coupler through a metallized via; the third 180° The A port of the 3dB broadband close-coupled directional coupler is connected to the microstrip line through the intersection of the transmission line and then connected to a "U"-shaped bent microstrip line, and then connected to the first 180° 3dB broadband close-coupled directional coupler through metallized vias. The Σ port is connected; the B port of the third 180°3dB broadband tight coupling directional coupler is connected to the first section of the microstrip line, and then connected to the second section of the microstrip line through the metallized via, and then tightly coupled with the second 180°3dB broadband The Σ port of the directional coupler is connected, and the first section and the second section of the microstrip line are projected into a "U" shape.

进一步的,所述宽带多层微带Butler波束成形网络矩阵装置中的微带线弯折处的外角全部做倒直角处理。Further, the outer corners of the bends of the microstrip lines in the broadband multi-layer microstrip Butler beamforming network matrix device are all treated as right angles.

进一步的,所述第一介质层的厚度0.1~3mm;第二介质层的厚度0.1~3mm;金属化过孔的直径为0.1~1mm。Further, the thickness of the first dielectric layer is 0.1-3 mm; the thickness of the second dielectric layer is 0.1-3 mm; the diameter of the metallized via is 0.1-1 mm.

本发明的优点包括:Advantages of the present invention include:

1、采用多层印制板工艺,电路紧凑,制作简单,成本低廉;1. Using multi-layer printed board technology, the circuit is compact, the production is simple, and the cost is low;

2、采用了电路宽边紧耦合技术,多层微带Butler矩阵具有工作频率宽,端口移相精度高、端口幅度波动小、损耗低和端口隔离度高等优点。2. Using the circuit wide-side tight coupling technology, the multi-layer microstrip Butler matrix has the advantages of wide operating frequency, high port phase shift accuracy, small port amplitude fluctuation, low loss and high port isolation.

附图说明Description of drawings

图1为本发明多层电路基板层结构示意图。FIG. 1 is a schematic diagram of the layer structure of the multilayer circuit substrate of the present invention.

图2为本发明宽带多层微带Butler4×4矩阵电路原理图。FIG. 2 is a schematic diagram of the broadband multi-layer microstrip Butler4×4 matrix circuit of the present invention.

图3为本发明90°3dB宽带紧耦合定向耦合器电路图。FIG. 3 is a circuit diagram of a 90° 3dB wideband tightly coupled directional coupler according to the present invention.

图4为本发明180°3dB宽带紧耦合定向耦合器电路图。FIG. 4 is a circuit diagram of a 180° 3dB wideband tightly coupled directional coupler according to the present invention.

图5为本发明具体实施宽带多层微带Butler4×4矩阵电路图。FIG. 5 is a circuit diagram of a broadband multi-layer microstrip Butler 4×4 matrix in a specific implementation of the present invention.

图6为本发明具体实施Butler4×4矩阵的馈电端口1激励时,天线端口5~8的信号相位数据图。横坐标为频率,单位GHz,纵坐标为信号相位,单位Degree。FIG. 6 is a data diagram of signal phases of antenna ports 5 to 8 when the feed port 1 of the Butler 4×4 matrix is excited in a specific implementation of the present invention. The abscissa is the frequency, the unit is GHz, and the ordinate is the signal phase, the unit is Degree.

图7为本发明具体实施Butler4×4矩阵的馈电端口2激励时,天线端口5~8的信号相位数据图。横坐标为频率,单位GHz,纵坐标为信号相位,单位Degree。FIG. 7 is a graph of signal phase data of antenna ports 5 to 8 when the feed port 2 of the Butler 4×4 matrix is excited in a specific implementation of the present invention. The abscissa is the frequency, the unit is GHz, and the ordinate is the signal phase, the unit is Degree.

图8为本发明具体实施Butler4×4矩阵的馈电端口3激励时,天线端口5~8的信号相位数据图。横坐标为频率,单位GHz,纵坐标为信号相位,单位Degree。FIG. 8 is a data diagram of signal phases of antenna ports 5 to 8 when the feed port 3 of the Butler 4×4 matrix is excited in a specific implementation of the present invention. The abscissa is the frequency, the unit is GHz, and the ordinate is the signal phase, the unit is Degree.

图9为本发明具体实施Butler4×4矩阵的馈电端口4激励时,天线端口5~8的信号相位数据图。横坐标为频率,单位GHz,纵坐标为信号相位,单位Degree。FIG. 9 is a data diagram of signal phases of antenna ports 5 to 8 when the feed port 4 of the Butler4×4 matrix is excited in a specific implementation of the present invention. The abscissa is the frequency, the unit is GHz, and the ordinate is the signal phase, the unit is Degree.

图10为本发明具体实施Butler4×4矩阵的馈电端口1激励时,天线端口5~8的信号插入损耗和馈电端口隔离的数据图。横坐标为频率,单位GHz,纵坐标为信号插入损耗,单位dB。10 is a data diagram of signal insertion loss and feeder port isolation at antenna ports 5 to 8 when the feeder port 1 of the Butler 4×4 matrix is excited in a specific implementation of the present invention. The abscissa is the frequency, the unit is GHz, and the ordinate is the signal insertion loss, the unit is dB.

图11为本发明具体实施Butler4×4矩阵的馈电端口2激励时,天线端口5~8的信号插入损耗和馈电端口隔离的数据图。横坐标为频率,单位GHz,纵坐标为信号插入损耗,单位dB。FIG. 11 is a data diagram of signal insertion loss and feeder port isolation at antenna ports 5 to 8 when the feeder port 2 of the Butler 4×4 matrix is excited in a specific implementation of the present invention. The abscissa is the frequency, the unit is GHz, and the ordinate is the signal insertion loss, the unit is dB.

图12为本发明具体实施Butler4×4矩阵的馈电端口3激励时,天线端口5~8的信号插入损耗和馈电端口隔离的数据图。横坐标为频率,单位GHz,纵坐标为信号插入损耗,单位dB。FIG. 12 is a data diagram of signal insertion loss and feeder port isolation at antenna ports 5 to 8 when the feeder port 3 of the Butler 4×4 matrix is excited in a specific implementation of the present invention. The abscissa is the frequency, the unit is GHz, and the ordinate is the signal insertion loss, the unit is dB.

图13为本发明具体实施Butler4×4矩阵的馈电端口4激励时,天线端口5~8的信号插入损耗和馈电端口隔离的数据图。横坐标为频率,单位GHz,纵坐标为信号插入损耗,单位dB。13 is a data diagram of signal insertion loss and feeder port isolation at antenna ports 5 to 8 when the feeder port 4 of the Butler 4×4 matrix is excited in a specific implementation of the present invention. The abscissa is the frequency, the unit is GHz, and the ordinate is the signal insertion loss, the unit is dB.

图14为本发明具体实施Butler4×4矩阵的各端口信号输入/输出驻波比。横坐标为频率,单位GHz,纵坐标为VSWR(驻波比)。FIG. 14 is the signal input/output standing wave ratio of each port of the Butler 4×4 matrix in a specific implementation of the present invention. The abscissa is frequency, the unit is GHz, and the ordinate is VSWR (standing wave ratio).

具体实施方式Detailed ways

本发明为一种基于多层印制板技术制作宽带多电路基板层微带Butler矩阵,其特征在于,包括第一介质层、电路基板和第二介质层,电路刻蚀在电路基板上下表面的金属层上,构成宽边紧耦合电路,形成强耦合用于宽带应用,电路基板上有金属化过孔,用于连接上下层电路;微带Butler矩阵为4×4矩阵由4个馈电端口,4个天线端口、1个90°3dB宽带紧耦合定向耦合器和3个180°3dB宽带紧耦合定向耦合器构成。所述第一90°3dB宽带紧耦合定向耦合器的C、D馈电端口分别为本发明装置的1、2输入端口,所述第三180°3dB宽带紧耦合定向耦合器的△、∑馈电端口分别为本发明装置的3、4输入端口,所述第一180°3dB宽带紧耦合定向耦合器的A、B天线端口分别为本发明装置的5、6天线端口,所述第二180°3dB宽带紧耦合定向耦合器的A、B天线端口分别为本发明装置的7、8天线端口;90°3dB宽带紧耦合定向耦合器由两个渐变紧耦合8.34dB定向耦合器级联构成;180°3dB宽带紧耦合定向耦合器由一个90°3dB宽带紧耦合定向耦合器和一个90°Schiffman宽带紧耦合差分移相器级联构成;90°Schiffman宽带紧耦合差分移相器由一个参考微带传输线和一个90°移相器构成;参考微带传输线采用蛇形曲折线的结构;90°移相器采用三段上下渐变紧耦合耦合线并通过末端的金属化过孔连接的结构。所述第一介质层的厚度0.1~3mm;电路基板的厚度0.1~3mm;第二介质层的厚度0.1~3mm;金属化过孔的直径为0.1~1mm。The invention is a kind of broadband multi-circuit substrate layer microstrip Butler matrix based on multi-layer printed board technology. On the metal layer, a broad-side tightly coupled circuit is formed to form strong coupling for broadband applications. There are metallized vias on the circuit substrate to connect the upper and lower circuits; the microstrip Butler matrix is a 4×4 matrix with 4 feed ports. , 4 antenna ports, a 90 ° 3dB broadband tight coupling directional coupler and three 180 ° 3dB broadband tight coupling directional coupler. The C and D feed ports of the first 90° 3dB broadband tight coupling directional coupler are respectively the 1 and 2 input ports of the device of the present invention, and the Δ and Σ feed ports of the third 180° 3dB broadband tight coupling directional coupler are respectively. The electrical ports are respectively the 3 and 4 input ports of the device of the present invention, the A and B antenna ports of the first 180° 3dB broadband tight-coupling directional coupler are respectively the 5 and 6 antenna ports of the device of the present invention, and the second 180 The A and B antenna ports of the °3dB wideband tight coupling directional coupler are respectively the 7 and 8 antenna ports of the device of the present invention; the 90°3dB wideband tight coupling directional coupler is composed of two gradient tight coupling 8.34dB directional couplers cascaded together; The 180°3dB broadband tightly coupled directional coupler is composed of a 90°3dB broadband tightly coupled directional coupler and a 90°Schiffman broadband tightly coupled differential phase shifter; the 90°Schiffman broadband tightly coupled differential phase shifter is composed of a reference micro It is composed of a strip transmission line and a 90° phase shifter; the reference microstrip transmission line adopts the structure of a serpentine zigzag line; the 90° phase shifter adopts a structure of three sections of up and down gradient tightly coupled coupling lines connected by metallized vias at the ends. The thickness of the first dielectric layer is 0.1-3 mm; the thickness of the circuit substrate is 0.1-3 mm; the thickness of the second dielectric layer is 0.1-3 mm; the diameter of the metallized via is 0.1-1 mm.

馈电端口1到4依次分别激励,在天线端口5到8产生等幅度功率输出,其相位差依次为90°、-90°、180°和0°:即给馈电端口1激励,则在天线端口5与端口6之间、端口6与端口7之间、端口7与端口8之间产生90°相差;给馈电端口2激励,则在天线端口5与端口6之间、端口6与端口7之间、端口7与端口8之间产生-90°相差;给馈电端口3激励,则在天线端口5与端口6之间、端口6与端口7之间、端口7与端口8之间产生180°相差;给馈电端口4激励,则在天线端口5与端口6之间、端口6与端口7之间、端口7与端口8之间产生0°相差。Feeding ports 1 to 4 are excited respectively, and equal-amplitude power outputs are generated at antenna ports 5 to 8, and the phase differences are 90°, -90°, 180°, and 0° in turn: that is, feed port 1 is excited, then at There is a 90° phase difference between the antenna port 5 and port 6, between port 6 and port 7, and between port 7 and port 8; when the feed port 2 is excited, between the antenna port 5 and port 6, between port 6 and port 6 A phase difference of -90° is generated between port 7 and between port 7 and port 8; when the feed port 3 is excited, there will be a difference between antenna port 5 and port 6, between port 6 and port 7, and between port 7 and port 8. A phase difference of 180° is generated between the antenna ports; when the feed port 4 is excited, a phase difference of 0° is generated between the antenna port 5 and port 6, between port 6 and port 7, and between port 7 and port 8.

制作宽带多层微带Butler4×4矩阵电路图,外形图如图5所示。第1介质为空气,厚度为0.8mm、电路基板为Rogers5880,厚度为0.254mm,第2介质为空气,厚度为0.8mm,电路刻蚀在电路基板上下表面的金属层上,电路面积不大于170mm×90mm。结果如图6~图14所示,工作频带覆盖1700~2200MHz,相对带宽大于25%,端口驻波VSWR最大值1.3,端口隔离大于20dB,各端口带内相位波动小于+/-2°,各端口带内幅度平坦度小于+/-0.3dB,馈电端口1到4依次分别激励,在天线端口5到8产生等幅度功率输出,端口相位差依次为90°+/-2°、-90°+/-2°、180°+/-2°和0°+/-2°,天线端口插入损耗6.5+/-0.5dB。The circuit diagram of the broadband multi-layer microstrip Butler4×4 matrix is made, and the outline diagram is shown in Figure 5. The first medium is air with a thickness of 0.8mm, the circuit substrate is Rogers5880 with a thickness of 0.254mm, the second medium is air with a thickness of 0.8mm, and the circuit is etched on the metal layer on the upper and lower surfaces of the circuit substrate, and the circuit area is not greater than 170mm ×90mm. The results are shown in Figure 6 to Figure 14. The operating frequency band covers 1700 to 2200 MHz, the relative bandwidth is greater than 25%, the maximum port standing wave VSWR is 1.3, the port isolation is greater than 20dB, and the in-band phase fluctuation of each port is less than +/-2°. The in-band amplitude flatness of the ports is less than +/-0.3dB, the feeder ports 1 to 4 are excited respectively, and the equal-amplitude power output is generated at the antenna ports 5 to 8, and the port phase difference is 90°+/-2°, -90° °+/-2°, 180°+/-2° and 0°+/-2°, the antenna port insertion loss is 6.5+/-0.5dB.

以上所述仅为本发明的较佳实施实例,并不用以限制本发明的保护范围,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above are only preferred embodiments of the present invention, and are not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the present invention. within the scope of protection of the invention.

Claims (7)

1. A broadband multilayer microstrip Butler beam forming network matrix device, the device comprising: the antenna comprises an upper metal ground, a first dielectric layer, a circuit substrate, a Butler beam forming network matrix arranged on the substrate, a second dielectric layer and a lower metal ground; the Butler beam forming network matrix arranged on the substrate comprises: the first 90-degree 3dB broadband tight coupling directional coupler, and the first to third 180-degree 3dB broadband tight coupling directional couplers; the first 90 ° 3dB broadband tightly coupled directional coupler comprises: A. b two output ports and C, D two input ports, the 180 ° 3dB wide-band tightly-coupled directional coupler comprising: A. b two output ports and delta and sigma two input ports; the port A of the first 90-degree 3dB broadband tight coupling directional coupler is connected with the port delta of the first 180-degree 3dB broadband tight coupling directional coupler, and the port B of the first 90-degree 3dB broadband tight coupling directional coupler is connected with the port delta of the second 180-degree 3dB broadband tight coupling directional coupler; the port A of the third 180-degree 3dB broadband tight coupling directional coupler is connected with the port sigma of the first 180-degree 3dB broadband tight coupling directional coupler, and the port B of the third 180-degree 3dB broadband tight coupling directional coupler is connected with the port sigma of the second 180-degree 3dB broadband tight coupling directional coupler; all input ports of the first 90-degree 3dB broadband tight coupling directional coupler and the third 180-degree 3dB broadband tight coupling directional coupler are used as feed ports of a broadband multilayer microstrip Butler beam forming network matrix device, and all output ports of the first 180-degree 3dB broadband tight coupling directional coupler and the second 180-degree 3dB broadband tight coupling directional coupler are antenna ports of the broadband multilayer microstrip Butler beam forming network matrix device;
characterized in that said first 90 ° 3dB broadband tight coupling directional coupler comprises: the circuit comprises a circuit substrate and metal microstrip lines arranged on the upper surface and the lower surface of the circuit substrate, wherein the metal microstrip lines on the upper surface and the lower surface are formed by cascading two gradually-changed tightly-coupled 8.34dB directional couplers, and are identical in shape and opposite in arrangement position; the feed port of the metal microstrip line on the upper surface is a port C of the first 90-degree 3dB broadband tight coupling directional coupler, and the antenna port is a port A of the first 90-degree 3dB broadband tight coupling directional coupler; the feed port of the metal microstrip line on the lower surface is a D port of the first 90-degree 3dB broadband tight coupling directional coupler, and the antenna port is a B port of the first 90-degree 3dB broadband tight coupling directional coupler;
the first to third 180 DEG 3dB broadband tight coupling directional couplers comprise: a second 90-degree 3dB broadband tightly-coupled directional coupler and a 90-degree Schiffman broadband tightly-coupled differential phase shifter; the 90 DEG Schiffman broadband tightly-coupled differential phase shifter comprises: a reference microstrip transmission line and a 90 ° phase shifter; the reference microstrip transmission line is a snakelike zigzag microstrip line arranged on the upper surface of the circuit substrate, one end of the reference microstrip transmission line is connected with an A port of the second 90-degree 3dB broadband tight coupling directional coupler, and the other end of the reference microstrip transmission line is used as output; the 90-degree phase shifter comprises three-section type gradually-changed coupling lines positioned on the upper surface and the lower surface of the circuit substrate, one end of the three-section type gradually-changed coupling line positioned on the lower surface of the circuit substrate is connected with a port B of a second 90-degree 3dB broadband tight coupling directional coupler, the other end of the three-section type gradually-changed coupling line positioned on the upper surface of the circuit substrate is connected with one end of the three-section type gradually-changed coupling line through a metalized through hole, and the other end of the; the C, D ports of the second 90-degree 3dB broadband tight coupling directional coupler are respectively the delta and sigma ports of the 180-degree 3dB broadband tight coupling directional coupler, and the output end of the serpentine microstrip line and the output end of the three-section type gradually-changed coupling line positioned on the upper surface of the circuit substrate are respectively A, B two ports of the 180-degree 3dB broadband tight coupling directional coupler.
2. The broadband multilayer microstrip Butler beam forming network matrix device according to claim 1, wherein the projections of the three-segment gradually-changed coupling lines on the upper surface and the lower surface of the circuit substrate in the 90 ° phase shifter are in a V shape, one side of the three-segment gradually-changed coupling line is flush, the middle section of the other side of the three-segment gradually-changed coupling line is convex, the width of the middle section of the three-segment gradually-changed coupling line is larger than that of the front section and the rear section of the three-segment gradually-changed coupling line, the convex of the middle section is located on the outer side of the projection of the three-segment gradually-changed coupling line on
Figure FDA0002717583700000022
Wherein λgThe wavelength of the operating center frequency of the Butler matrix.
3. The wideband multi-layer microstrip Butler beamforming network matrix device of claim 1 wherein the tapered tightly coupled 8.34dB directional coupler of the first or second 90 ° 3dB wideband tightly coupled directional couplers comprises: input section, changeover portion, output section, wherein the input section includes: the 50 ohm rectangular transmission line input port is perpendicular to the input stub microstrip line, and the tip-shaped impedance gradual change transition transmission line stub is the outward extension of the input stub microstrip line at the connection part with the input port; the input section and the transition section form obtuse angle connection, and the input section and the output section form central symmetry; the two gradually-changed tightly-coupled 8.34dB directional couplers are cascaded to form a U shape, and the input port and the output port after the cascade are positioned on the outer side of the U shape.
4. The wideband multi-layer microstrip Butler beamforming network matrix device of claim 1 wherein said serpentine reference microstrip transmission line comprises in order from the input: a first U-shaped bend, a second U-shaped bend, a third U-shaped bend, a fourth U-shaped bend, a first right-angle bend, a second right-angle bend, a fifth U-shaped bend, a sixth U-shaped bend, a seventh U-shaped bend, a third right-angle bend, a fourth right-angle bend, an eighth U-shaped bend, a fifth right-angle bend and a sixth right-angle bend; the bending directions of the first right-angle bending and the second right-angle bending are opposite; the bending directions of the third right-angle bending and the fourth right-angle bending are opposite; the bending directions of the fifth right-angle bending and the sixth right-angle bending are opposite, and the length of the whole reference microstrip transmission line is
Figure FDA0002717583700000021
Wherein λgThe wavelength of the operating center frequency of the Butler matrix.
5. The device of any one of claims 1, 2, 3 or 4, wherein the port A of the first 90 ° 3dB broadband tightly-coupled directional coupler is connected with the port A of the first 180 ° 3dB broadband tightly-coupled directional coupler through a U-shaped bent microstrip line; the B port of the first 90-degree 3dB broadband tight coupling directional coupler is connected with the delta port of the second 180-degree 3dB broadband tight coupling directional coupler through a metalized via hole after passing through the transmission line cross point; the port A connecting microstrip line of the third 180-degree 3dB broadband tight coupling directional coupler is connected with a U-shaped bent microstrip line through a transmission line cross point and then is connected with the sigma port of the first 180-degree 3dB broadband tight coupling directional coupler through a metalized via hole; and the port B of the third 180-degree 3dB broadband tight coupling directional coupler is connected with the first section of microstrip line, then is connected with the second section of microstrip line through a metalized via hole, and then is connected with the sigma port of the second 180-degree 3dB broadband tight coupling directional coupler, and the first section and the second section of microstrip line form a U shape in a projection mode.
6. The device as claimed in any one of claims 1, 2, 3 or 4, wherein all external angles at the bends of the microstrip lines in the device are chamfered.
7. The broadband multilayer microstrip Butler beam forming network matrix device according to any one of claims 1, 2, 3 or 4, wherein the thickness of said first dielectric layer is 0.1-3 mm; the thickness of the second medium layer is 0.1-3 mm; the diameter of the metalized through hole is 0.1-1 mm.
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