CN108448221B - Broadband multilayer microstrip Butler beam forming network matrix device - Google Patents
Broadband multilayer microstrip Butler beam forming network matrix device Download PDFInfo
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- CN108448221B CN108448221B CN201810192860.8A CN201810192860A CN108448221B CN 108448221 B CN108448221 B CN 108448221B CN 201810192860 A CN201810192860 A CN 201810192860A CN 108448221 B CN108448221 B CN 108448221B
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
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Abstract
The invention discloses a broadband multilayer microstrip Butler beam forming network matrix device, and belongs to the technical field of electronic communication. The broadband multilayer microstrip Butler beam forming network matrix has the advantages of easiness in manufacturing, low cost, high port phase shifting precision, small port amplitude fluctuation, low loss, wide working frequency, high port isolation and the like, and can meet the requirements of modern civil mobile communication systems and military radar systems on a new generation of multi-beam array antennas and antenna tests.
Description
Technical Field
The invention belongs to the technical field of electronic communication.
Background
With the rapid development of communication technology, the simpler realization and accurate pointing of the multi-beam antenna make the multi-beam antenna play more and more important roles in radar and communication systems, especially 4G and 5G mobile communication systems. The core of the multi-beam antenna is the beam forming circuit feed network, and the Butler matrix has a great application prospect due to the advantages of simple structure, low insertion loss, convenience in manufacturing and the like.
The existing Butler matrix technology mainly comprises a plurality of single-layer microstrip couplers and transmission microstrip line phase shifters, so that the amplitude and the phase of signals at each output port are changed, after the signals are fed into a phased array antenna, the signal processing functions of beam forming and power spectrum estimation are realized, the incoming wave direction of the signals is determined, and the signals are further accurately oriented. The method has the advantages that the technology is simple, but the defects of narrow working frequency, large port phase shift error, poor port amplitude flatness and the like are overcome, so that the platform is poor in universality and narrow in application scene. The invention develops a multilayer microstrip Butler beam forming network matrix which is miniaturized in plane, easy to manufacture, low in cost, high in performance and wide in band coverage by utilizing a multilayer printed board technology, and can be widely applied to a multi-beam antenna beam forming circuit feed network under multiple scenes.
Disclosure of Invention
The invention aims to overcome the defects of narrow working frequency, large port phase shift error, poor port amplitude flatness and the like of the conventional Butler matrix, and the realized broadband multilayer microstrip Butler beam forming network matrix has the advantages of easiness in manufacturing, low cost, high port phase shift precision, small port amplitude fluctuation, low loss, wide working frequency, high port isolation and the like, and can meet the requirements of modern civil mobile communication systems and military radar systems on new generation multi-beam array antennas and antenna tests.
The technical scheme of the invention is a broadband multilayer microstrip Butler beam forming network matrix device, the structure of which is shown in figure 1, and the device comprises: the antenna comprises an upper metal ground, a first dielectric layer, a circuit substrate, a Butler beam forming network matrix arranged on the substrate, a second dielectric layer and a lower metal ground; as shown in fig. 2, the Butler beam forming network matrix disposed on the substrate includes: the first 90-degree 3dB broadband tight coupling directional coupler, and the first to third 180-degree 3dB broadband tight coupling directional couplers; the first 90 ° 3dB broadband tightly coupled directional coupler comprises: A. b two output ports and C, D two input ports, the 180 ° 3dB wide-band tightly-coupled directional coupler comprising: A. b two output ports and delta and sigma two input ports; the port A of the first 90-degree 3dB broadband tight coupling directional coupler is connected with the port delta of the first 180-degree 3dB broadband tight coupling directional coupler, and the port B of the first 90-degree 3dB broadband tight coupling directional coupler is connected with the port delta of the second 180-degree 3dB broadband tight coupling directional coupler; the port A of the third 180-degree 3dB broadband tight coupling directional coupler is connected with the port sigma of the first 180-degree 3dB broadband tight coupling directional coupler, and the port B of the third 180-degree 3dB broadband tight coupling directional coupler is connected with the port sigma of the second 180-degree 3dB broadband tight coupling directional coupler; all input ports of the first 90-degree 3dB broadband tight coupling directional coupler and the third 180-degree 3dB broadband tight coupling directional coupler are used as feed ports of the broadband multilayer microstrip Butler beam forming network matrix device, and all output ports of the first 180-degree 3dB broadband tight coupling directional coupler and the second 180-degree 3dB broadband tight coupling directional coupler are antenna ports of the broadband multilayer microstrip Butler beam forming network matrix device.
Characterized in that the first 90 ° 3dB broadband tightly coupled directional coupler, as shown in fig. 3, comprises: the circuit comprises a circuit substrate and metal microstrip lines arranged on the upper surface and the lower surface of the circuit substrate, wherein the metal microstrip lines on the upper surface and the lower surface are formed by cascading two gradually-changed tightly-coupled 8.34dB directional couplers, and are identical in shape and opposite in arrangement position; the feed port of the metal microstrip line on the upper surface is a port C of the first 90-degree 3dB broadband tight coupling directional coupler, and the antenna port is a port A of the first 90-degree 3dB broadband tight coupling directional coupler; the feed port of the metal microstrip line on the lower surface is a D port of the first 90-degree 3dB broadband tight coupling directional coupler, and the antenna port is a B port of the first 90-degree 3dB broadband tight coupling directional coupler.
The first to third 180 ° 3dB broadband tight coupling directional couplers, as shown in fig. 4, include: a second 90-degree 3dB broadband tightly-coupled directional coupler and a 90-degree Schiffman broadband tightly-coupled differential phase shifter; the 90 DEG Schiffman broadband tightly-coupled differential phase shifter comprises: a reference microstrip transmission line and a 90 ° phase shifter; the reference microstrip transmission line is a snakelike zigzag microstrip line arranged on the upper surface of the circuit substrate, one end of the reference microstrip transmission line is connected with an A port of the second 90-degree 3dB broadband tight coupling directional coupler, and the other end of the reference microstrip transmission line is used as output; the 90-degree phase shifter comprises three-section type gradually-changed coupling lines positioned on the upper surface and the lower surface of the circuit substrate, one end of the three-section type gradually-changed coupling line positioned on the lower surface of the circuit substrate is connected with a port B of a second 90-degree 3dB broadband tight coupling directional coupler, the other end of the three-section type gradually-changed coupling line positioned on the upper surface of the circuit substrate is connected with one end of the three-section type gradually-changed coupling line through a metalized through hole, and the other end of the; the C, D ports of the second 90-degree 3dB broadband tight coupling directional coupler are respectively the delta and sigma ports of the 180-degree 3dB broadband tight coupling directional coupler, and the output end of the serpentine microstrip line and the output end of the three-section type gradually-changed coupling line positioned on the upper surface of the circuit substrate are respectively A, B two ports of the 180-degree 3dB broadband tight coupling directional coupler.
Furthermore, the projection of the three-section type gradually-changed coupling line positioned on the upper surface and the lower surface of the circuit substrate in the 90-degree phase shifter is in a V shape, one side of the three-section type gradually-changed coupling line is flush, the middle section of the other side of the three-section type gradually-changed coupling line is convex, and the width of the three-section type gradually-changed coupling line is wideIs larger than the front section and the rear section, the bulge of the middle section is positioned at the outer side of the projection V-shaped of the three-section gradually-changed coupling line on the upper surface and the lower surface of the circuit substrate, and the length of each section of the coupling line is
Wherein λgIs the operating center frequency of the Butler matrix.
Further, the tapered tight-coupled 8.34dB directional coupler of the first or second 90 ° 3dB broadband tight-coupled directional couplers comprises: input section, changeover portion, output section, wherein the input section includes: the 50 ohm rectangular transmission line input port is perpendicular to the input stub microstrip line, and the tip-shaped impedance gradual change transition transmission line stub is the outward extension of the input stub microstrip line at the connection part with the input port; the input section and the transition section form obtuse angle connection, and the input section and the output section form central symmetry; the two gradually-changed tightly-coupled 8.34dB directional couplers are cascaded to form a U shape, and the input port and the output port after the cascade are positioned on the outer side of the U shape.
Further, the reference microstrip transmission line with the serpentine shape sequentially comprises, from the input end: a first U-shaped bend, a second U-shaped bend, a third U-shaped bend, a fourth U-shaped bend, a first right-angle bend, a second right-angle bend, a fifth U-shaped bend, a sixth U-shaped bend, a seventh U-shaped bend, a third right-angle bend, a fourth right-angle bend, an eighth U-shaped bend, a fifth right-angle bend and a sixth right-angle bend; the bending directions of the first right-angle bending and the second right-angle bending are opposite; the bending directions of the third right-angle bending and the fourth right-angle bending are opposite; the bending directions of the fifth right-angle bending and the sixth right-angle bending are opposite, and the length of the whole reference microstrip transmission line is
Further, the port a of the first 90 ° 3dB broadband tight coupling directional coupler is connected to the port Δ of the first 180 ° 3dB broadband tight coupling directional coupler by a U-shaped bent microstrip line; the B port of the first 90-degree 3dB broadband tight coupling directional coupler is connected with the delta port of the second 180-degree 3dB broadband tight coupling directional coupler through a metalized via hole after passing through the transmission line cross point; the port A connecting microstrip line of the third 180-degree 3dB broadband tight coupling directional coupler is connected with a U-shaped bent microstrip line through a transmission line cross point and then is connected with the sigma port of the first 180-degree 3dB broadband tight coupling directional coupler through a metalized via hole; and the port B of the third 180-degree 3dB broadband tight coupling directional coupler is connected with the first section of microstrip line, then is connected with the second section of microstrip line through a metalized via hole, and then is connected with the sigma port of the second 180-degree 3dB broadband tight coupling directional coupler, and the first section and the second section of microstrip line form a U shape in a projection mode.
Furthermore, the outer angles of the microstrip line bending positions in the broadband multilayer microstrip Butler beam forming network matrix device are all subjected to chamfering treatment.
Further, the thickness of the first dielectric layer is 0.1-3 mm; the thickness of the second medium layer is 0.1-3 mm; the diameter of the metalized through hole is 0.1-1 mm.
The advantages of the invention include:
1. the multilayer printed board process is adopted, so that the circuit is compact, the manufacture is simple, and the cost is low;
2. by adopting a circuit broadside tight coupling technology, the multilayer microstrip Butler matrix has the advantages of wide working frequency, high port phase-shifting precision, small port amplitude fluctuation, low loss, high port isolation and the like.
Drawings
FIG. 1 is a schematic view of the structure of the multi-layer circuit substrate layer according to the present invention.
Fig. 2 is a schematic diagram of a broadband multilayer microstrip Butler4 × 4 matrix circuit of the present invention.
Fig. 3 is a circuit diagram of a 90 deg. 3dB broadband tightly coupled directional coupler of the present invention.
Fig. 4 is a circuit diagram of a 180 deg. 3dB broadband tightly coupled directional coupler of the present invention.
Fig. 5 is a circuit diagram of a wideband multi-layer microstrip Butler4 × 4 matrix according to an embodiment of the present invention.
FIG. 6 is a diagram of signal phase data for antenna ports 5-8 when excited by feed port 1 of a Butler4 × 4 matrix, in accordance with an embodiment of the present invention. The abscissa is frequency in GHz and the ordinate is signal phase in Degree.
FIG. 7 is a diagram of signal phase data for antenna ports 5-8 when excited by feed port 2 of a Butler4 × 4 matrix, in accordance with an embodiment of the present invention. The abscissa is frequency in GHz and the ordinate is signal phase in Degree.
FIG. 8 is a diagram of signal phase data for antenna ports 5-8 when excited by feed port 3 of a Butler4 × 4 matrix, in accordance with an embodiment of the present invention. The abscissa is frequency in GHz and the ordinate is signal phase in Degree.
FIG. 9 is a diagram of signal phase data for antenna ports 5-8 when excited by feed port 4 of a Butler4 × 4 matrix, in accordance with an embodiment of the present invention. The abscissa is frequency in GHz and the ordinate is signal phase in Degree.
FIG. 10 is a data plot of signal insertion loss and feed port isolation for antenna ports 5-8 when excited at feed port 1 of a Butler4 × 4 matrix, in accordance with an embodiment of the present invention. The abscissa is frequency in GHz and the ordinate is signal insertion loss in dB.
FIG. 11 is a data plot of signal insertion loss and feed port isolation for antenna ports 5-8 when excited at feed port 2 in a Butler4 × 4 matrix, in accordance with an embodiment of the present invention. The abscissa is frequency in GHz and the ordinate is signal insertion loss in dB.
FIG. 12 is a data plot of signal insertion loss and feed port isolation for antenna ports 5-8 when excited at feed port 3 in a Butler4 × 4 matrix, in accordance with an embodiment of the present invention. The abscissa is frequency in GHz and the ordinate is signal insertion loss in dB.
FIG. 13 is a data plot of signal insertion loss and feed port isolation for antenna ports 5-8 when excited at feed port 4 in a Butler4 × 4 matrix, in accordance with an embodiment of the present invention. The abscissa is frequency in GHz and the ordinate is signal insertion loss in dB.
FIG. 14 shows the signal input/output standing wave ratio for each port of a Butler4 × 4 matrix according to an embodiment of the present invention. The abscissa is frequency in GHz and the ordinate is VSWR (standing wave ratio).
Detailed Description
The invention relates to a microstrip Butler matrix based on a multilayer printed board technology for manufacturing a broadband multi-circuit substrate layer, which is characterized by comprising a first dielectric layer, a circuit substrate and a second dielectric layer, wherein a circuit is etched on metal layers on the upper surface and the lower surface of the circuit substrate to form a wide-edge tight coupling circuit, so that strong coupling is formed for broadband application, and a metallized through hole is formed in the circuit substrate and is used for connecting an upper circuit and a lower circuit; the microstrip Butler matrix is a 4 x 4 matrix and consists of 4 feed ports, 4 antenna ports, 1 90-degree 3dB broadband tightly-coupled directional coupler and 3 180-degree 3dB broadband tightly-coupled directional couplers. C, D feed ports of the first 90-degree 3dB broadband tight coupling directional coupler are respectively input ports 1 and 2 of the device, Delta and Sigma feed ports of the third 180-degree 3dB broadband tight coupling directional coupler are respectively input ports 3 and 4 of the device, A, B antenna ports of the first 180-degree 3dB broadband tight coupling directional coupler are respectively antenna ports 5 and 6 of the device, and A, B antenna ports of the second 180-degree 3dB broadband tight coupling directional coupler are respectively antenna ports 7 and 8 of the device; the 90-degree 3dB broadband tight coupling directional coupler is formed by cascading two gradually-changed tight coupling 8.34dB directional couplers; the 180-degree 3dB broadband tightly-coupled directional coupler is formed by cascading a 90-degree 3dB broadband tightly-coupled directional coupler and a 90-degree Schiffman broadband tightly-coupled differential phase shifter; the 90-degree Schiffman broadband tightly-coupled differential phase shifter is composed of a reference microstrip transmission line and a 90-degree phase shifter; the reference microstrip transmission line adopts a structure of a snake-shaped zigzag line; the 90-degree phase shifter adopts a structure that three sections of tightly coupled lines gradually changed from top to bottom are connected through metalized through holes at the tail ends. The thickness of the first dielectric layer is 0.1-3 mm; the thickness of the circuit substrate is 0.1-3 mm; the thickness of the second medium layer is 0.1-3 mm; the diameter of the metalized through hole is 0.1-1 mm.
The feeding ports 1 to 4 are sequentially excited respectively, and equal-amplitude power output is generated at the antenna ports 5 to 8, and the phase difference is sequentially 90 degrees, -90 degrees, 180 degrees and 0 degrees: namely, the feed port 1 is excited, and 90 ° phase difference is generated between the antenna port 5 and the port 6, between the port 6 and the port 7, and between the port 7 and the port 8; when the feed port 2 is excited, a-90-degree phase difference is generated between the antenna port 5 and the port 6, between the port 6 and the port 7, and between the port 7 and the port 8; when the feed port 3 is excited, 180-degree phase difference is generated between the antenna port 5 and the port 6, between the port 6 and the port 7, and between the port 7 and the port 8; energizing the feed port 4 produces a 0 deg. phase difference between the antenna ports 5 and 6, between the ports 6 and 7, and between the ports 7 and 8.
A broadband multilayer microstrip Butler4 multiplied by 4 matrix circuit diagram is manufactured, and the outline diagram is shown in figure 5. The 1 st medium is air, the thickness is 0.8mm, the circuit substrate is Rogers5880, the thickness is 0.254mm, the 2 nd medium is air, the thickness is 0.8mm, the circuit is etched on the metal layers on the upper surface and the lower surface of the circuit substrate, and the circuit area is not more than 170mm multiplied by 90 mm. The result is shown in fig. 6-14, the working frequency band covers 1700-2200 MHz, the relative bandwidth is greater than 25%, the maximum value of the port standing wave VSWR is 1.3, the port isolation is greater than 20dB, the phase fluctuation in each port band is less than +/-2 °, the amplitude flatness in each port band is less than +/-0.3dB, the feed ports 1 to 4 are sequentially and respectively excited, equal-amplitude power output is generated at the antenna ports 5 to 8, the port phase difference is sequentially 90 ° +/-2 °, -90 ° +/-2 °, 180 ° +/-2 ° and 0 ° +/-2 °, and the antenna port insertion loss is 6.5+/-0.5 dB.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the invention, which is intended to cover any modifications, equivalents, improvements, etc. within the spirit and scope of the present invention.
Claims (7)
1. A broadband multilayer microstrip Butler beam forming network matrix device, the device comprising: the antenna comprises an upper metal ground, a first dielectric layer, a circuit substrate, a Butler beam forming network matrix arranged on the substrate, a second dielectric layer and a lower metal ground; the Butler beam forming network matrix arranged on the substrate comprises: the first 90-degree 3dB broadband tight coupling directional coupler, and the first to third 180-degree 3dB broadband tight coupling directional couplers; the first 90 ° 3dB broadband tightly coupled directional coupler comprises: A. b two output ports and C, D two input ports, the 180 ° 3dB wide-band tightly-coupled directional coupler comprising: A. b two output ports and delta and sigma two input ports; the port A of the first 90-degree 3dB broadband tight coupling directional coupler is connected with the port delta of the first 180-degree 3dB broadband tight coupling directional coupler, and the port B of the first 90-degree 3dB broadband tight coupling directional coupler is connected with the port delta of the second 180-degree 3dB broadband tight coupling directional coupler; the port A of the third 180-degree 3dB broadband tight coupling directional coupler is connected with the port sigma of the first 180-degree 3dB broadband tight coupling directional coupler, and the port B of the third 180-degree 3dB broadband tight coupling directional coupler is connected with the port sigma of the second 180-degree 3dB broadband tight coupling directional coupler; all input ports of the first 90-degree 3dB broadband tight coupling directional coupler and the third 180-degree 3dB broadband tight coupling directional coupler are used as feed ports of a broadband multilayer microstrip Butler beam forming network matrix device, and all output ports of the first 180-degree 3dB broadband tight coupling directional coupler and the second 180-degree 3dB broadband tight coupling directional coupler are antenna ports of the broadband multilayer microstrip Butler beam forming network matrix device;
characterized in that said first 90 ° 3dB broadband tight coupling directional coupler comprises: the circuit comprises a circuit substrate and metal microstrip lines arranged on the upper surface and the lower surface of the circuit substrate, wherein the metal microstrip lines on the upper surface and the lower surface are formed by cascading two gradually-changed tightly-coupled 8.34dB directional couplers, and are identical in shape and opposite in arrangement position; the feed port of the metal microstrip line on the upper surface is a port C of the first 90-degree 3dB broadband tight coupling directional coupler, and the antenna port is a port A of the first 90-degree 3dB broadband tight coupling directional coupler; the feed port of the metal microstrip line on the lower surface is a D port of the first 90-degree 3dB broadband tight coupling directional coupler, and the antenna port is a B port of the first 90-degree 3dB broadband tight coupling directional coupler;
the first to third 180 DEG 3dB broadband tight coupling directional couplers comprise: a second 90-degree 3dB broadband tightly-coupled directional coupler and a 90-degree Schiffman broadband tightly-coupled differential phase shifter; the 90 DEG Schiffman broadband tightly-coupled differential phase shifter comprises: a reference microstrip transmission line and a 90 ° phase shifter; the reference microstrip transmission line is a snakelike zigzag microstrip line arranged on the upper surface of the circuit substrate, one end of the reference microstrip transmission line is connected with an A port of the second 90-degree 3dB broadband tight coupling directional coupler, and the other end of the reference microstrip transmission line is used as output; the 90-degree phase shifter comprises three-section type gradually-changed coupling lines positioned on the upper surface and the lower surface of the circuit substrate, one end of the three-section type gradually-changed coupling line positioned on the lower surface of the circuit substrate is connected with a port B of a second 90-degree 3dB broadband tight coupling directional coupler, the other end of the three-section type gradually-changed coupling line positioned on the upper surface of the circuit substrate is connected with one end of the three-section type gradually-changed coupling line through a metalized through hole, and the other end of the; the C, D ports of the second 90-degree 3dB broadband tight coupling directional coupler are respectively the delta and sigma ports of the 180-degree 3dB broadband tight coupling directional coupler, and the output end of the serpentine microstrip line and the output end of the three-section type gradually-changed coupling line positioned on the upper surface of the circuit substrate are respectively A, B two ports of the 180-degree 3dB broadband tight coupling directional coupler.
2. The broadband multilayer microstrip Butler beam forming network matrix device according to claim 1, wherein the projections of the three-segment gradually-changed coupling lines on the upper surface and the lower surface of the circuit substrate in the 90 ° phase shifter are in a V shape, one side of the three-segment gradually-changed coupling line is flush, the middle section of the other side of the three-segment gradually-changed coupling line is convex, the width of the middle section of the three-segment gradually-changed coupling line is larger than that of the front section and the rear section of the three-segment gradually-changed coupling line, the convex of the middle section is located on the outer side of the projection of the three-segment gradually-changed coupling line on
Wherein λgThe wavelength of the operating center frequency of the Butler matrix.
3. The wideband multi-layer microstrip Butler beamforming network matrix device of claim 1 wherein the tapered tightly coupled 8.34dB directional coupler of the first or second 90 ° 3dB wideband tightly coupled directional couplers comprises: input section, changeover portion, output section, wherein the input section includes: the 50 ohm rectangular transmission line input port is perpendicular to the input stub microstrip line, and the tip-shaped impedance gradual change transition transmission line stub is the outward extension of the input stub microstrip line at the connection part with the input port; the input section and the transition section form obtuse angle connection, and the input section and the output section form central symmetry; the two gradually-changed tightly-coupled 8.34dB directional couplers are cascaded to form a U shape, and the input port and the output port after the cascade are positioned on the outer side of the U shape.
4. The wideband multi-layer microstrip Butler beamforming network matrix device of claim 1 wherein said serpentine reference microstrip transmission line comprises in order from the input: a first U-shaped bend, a second U-shaped bend, a third U-shaped bend, a fourth U-shaped bend, a first right-angle bend, a second right-angle bend, a fifth U-shaped bend, a sixth U-shaped bend, a seventh U-shaped bend, a third right-angle bend, a fourth right-angle bend, an eighth U-shaped bend, a fifth right-angle bend and a sixth right-angle bend; the bending directions of the first right-angle bending and the second right-angle bending are opposite; the bending directions of the third right-angle bending and the fourth right-angle bending are opposite; the bending directions of the fifth right-angle bending and the sixth right-angle bending are opposite, and the length of the whole reference microstrip transmission line is
Wherein λgThe wavelength of the operating center frequency of the Butler matrix.
5. The device of any one of claims 1, 2, 3 or 4, wherein the port A of the first 90 ° 3dB broadband tightly-coupled directional coupler is connected with the port A of the first 180 ° 3dB broadband tightly-coupled directional coupler through a U-shaped bent microstrip line; the B port of the first 90-degree 3dB broadband tight coupling directional coupler is connected with the delta port of the second 180-degree 3dB broadband tight coupling directional coupler through a metalized via hole after passing through the transmission line cross point; the port A connecting microstrip line of the third 180-degree 3dB broadband tight coupling directional coupler is connected with a U-shaped bent microstrip line through a transmission line cross point and then is connected with the sigma port of the first 180-degree 3dB broadband tight coupling directional coupler through a metalized via hole; and the port B of the third 180-degree 3dB broadband tight coupling directional coupler is connected with the first section of microstrip line, then is connected with the second section of microstrip line through a metalized via hole, and then is connected with the sigma port of the second 180-degree 3dB broadband tight coupling directional coupler, and the first section and the second section of microstrip line form a U shape in a projection mode.
6. The device as claimed in any one of claims 1, 2, 3 or 4, wherein all external angles at the bends of the microstrip lines in the device are chamfered.
7. The broadband multilayer microstrip Butler beam forming network matrix device according to any one of claims 1, 2, 3 or 4, wherein the thickness of said first dielectric layer is 0.1-3 mm; the thickness of the second medium layer is 0.1-3 mm; the diameter of the metalized through hole is 0.1-1 mm.
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| CN113483856A (en) * | 2018-10-19 | 2021-10-08 | 北京古大仪表有限公司 | Microstrip double-branch directional coupler and radar level measurement system |
| CN109586047B (en) * | 2018-12-07 | 2023-11-03 | 华南理工大学 | Broadband 3X 4 Butler matrix feed network |
| CN111384563B (en) * | 2018-12-29 | 2021-06-01 | 华为技术有限公司 | Coupling feeding device, phase shifter and antenna |
| CN110780112B (en) * | 2019-10-25 | 2022-06-28 | 武汉滨湖电子有限责任公司 | High flatness power detection device |
| CN110911836B (en) * | 2019-12-23 | 2021-10-26 | 航天南湖电子信息技术股份有限公司 | X-waveband digital phased array distributed sub-array T/R component feed circuit |
| CN112787106B (en) * | 2021-02-04 | 2024-09-24 | 华南理工大学 | Planar 16×16 broadband butler matrix feed network |
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