CN108447896B - Manufacturing method of terminal structure of silicon carbide power device - Google Patents
Manufacturing method of terminal structure of silicon carbide power device Download PDFInfo
- Publication number
- CN108447896B CN108447896B CN201810307901.3A CN201810307901A CN108447896B CN 108447896 B CN108447896 B CN 108447896B CN 201810307901 A CN201810307901 A CN 201810307901A CN 108447896 B CN108447896 B CN 108447896B
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- region
- junction
- sacrificial layer
- silicon carbide
- doped region
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 150000002500 ions Chemical class 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 37
- 238000005468 ion implantation Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000002441 reversible effect Effects 0.000 claims abstract description 10
- 230000003247 decreasing effect Effects 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 19
- 230000036961 partial effect Effects 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 abstract description 10
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron and aluminum Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Micromachines (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810307901.3A CN108447896B (en) | 2018-04-08 | 2018-04-08 | Manufacturing method of terminal structure of silicon carbide power device |
PCT/CN2019/080921 WO2019196700A1 (en) | 2018-04-08 | 2019-04-02 | Manufacturing method for terminal structure of silicon carbide power device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810307901.3A CN108447896B (en) | 2018-04-08 | 2018-04-08 | Manufacturing method of terminal structure of silicon carbide power device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108447896A CN108447896A (en) | 2018-08-24 |
CN108447896B true CN108447896B (en) | 2021-02-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810307901.3A Expired - Fee Related CN108447896B (en) | 2018-04-08 | 2018-04-08 | Manufacturing method of terminal structure of silicon carbide power device |
Country Status (2)
Country | Link |
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CN (1) | CN108447896B (en) |
WO (1) | WO2019196700A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108447896B (en) * | 2018-04-08 | 2021-02-05 | 深圳市太赫兹科技创新研究院 | Manufacturing method of terminal structure of silicon carbide power device |
CN117476447A (en) * | 2023-12-28 | 2024-01-30 | 深圳腾睿微电子科技有限公司 | Silicon carbide MOS device and manufacturing method of terminal graded junction thereof |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5801836A (en) * | 1996-07-16 | 1998-09-01 | Abb Research Ltd. | Depletion region stopper for PN junction in silicon carbide |
US6002159A (en) * | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
CN102651387A (en) * | 2011-02-25 | 2012-08-29 | 富士通株式会社 | Compound semiconductor device, method for producing the same, and power supply |
CN105304688A (en) * | 2015-11-04 | 2016-02-03 | 中国工程物理研究院电子工程研究所 | Junction termination structure for silicon carbide power device and fabrication method |
CN106611777A (en) * | 2015-10-26 | 2017-05-03 | 南京励盛半导体科技有限公司 | Terminal structure of silicon carbide semiconductor device |
CN107482050A (en) * | 2017-08-18 | 2017-12-15 | 珠海格力电器股份有限公司 | Terminal structure of power device and manufacturing method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160013266A1 (en) * | 2013-03-27 | 2016-01-14 | Toyota Jidosha Kabushiki Kaisha | Vertical semiconductor device |
TWI544622B (en) * | 2015-06-05 | 2016-08-01 | 國立清華大學 | Semiconductor structure |
CN108447896B (en) * | 2018-04-08 | 2021-02-05 | 深圳市太赫兹科技创新研究院 | Manufacturing method of terminal structure of silicon carbide power device |
-
2018
- 2018-04-08 CN CN201810307901.3A patent/CN108447896B/en not_active Expired - Fee Related
-
2019
- 2019-04-02 WO PCT/CN2019/080921 patent/WO2019196700A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5801836A (en) * | 1996-07-16 | 1998-09-01 | Abb Research Ltd. | Depletion region stopper for PN junction in silicon carbide |
US6002159A (en) * | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
CN102651387A (en) * | 2011-02-25 | 2012-08-29 | 富士通株式会社 | Compound semiconductor device, method for producing the same, and power supply |
CN106611777A (en) * | 2015-10-26 | 2017-05-03 | 南京励盛半导体科技有限公司 | Terminal structure of silicon carbide semiconductor device |
CN105304688A (en) * | 2015-11-04 | 2016-02-03 | 中国工程物理研究院电子工程研究所 | Junction termination structure for silicon carbide power device and fabrication method |
CN107482050A (en) * | 2017-08-18 | 2017-12-15 | 珠海格力电器股份有限公司 | Terminal structure of power device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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CN108447896A (en) | 2018-08-24 |
WO2019196700A1 (en) | 2019-10-17 |
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Effective date of registration: 20230619 Address after: 518102 east side of 2nd floor, building 37, chentian Industrial Zone, Baotian 1st Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: SHENZHEN THZ SCIENCE AND TECHNOLOGY INNOVATION INSTITUTE Patentee after: Shenzhen Huaxun ark Photoelectric Technology Co.,Ltd. Address before: 518102 east side of 2nd floor, building 37, chentian Industrial Zone, Baotian 1st Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN THZ SCIENCE AND TECHNOLOGY INNOVATION INSTITUTE Patentee before: CHINA COMMUNICATION TECHNOLOGY Co.,Ltd. |
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