CN106611777A - Terminal structure of silicon carbide semiconductor device - Google Patents
Terminal structure of silicon carbide semiconductor device Download PDFInfo
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- CN106611777A CN106611777A CN201510716807.XA CN201510716807A CN106611777A CN 106611777 A CN106611777 A CN 106611777A CN 201510716807 A CN201510716807 A CN 201510716807A CN 106611777 A CN106611777 A CN 106611777A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract description 39
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 16
- 238000009826 distribution Methods 0.000 claims abstract description 58
- 239000002019 doping agent Substances 0.000 claims abstract description 16
- 230000008859 change Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 13
- 238000009825 accumulation Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 230000015556 catabolic process Effects 0.000 description 20
- 230000005684 electric field Effects 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 238000001459 lithography Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000005457 optimization Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000013399 edible fruits Nutrition 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000006677 Appel reaction Methods 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a terminal structure of a silicon carbide semiconductor device, which comprises the following characteristics: the terminal structure can have more than one concentration slope doped region, and a terminal region having three different concentration slopes is taken as an example; the terminal region comprises terminal structure doping concentrations which are respectively responsible for a low temperature, an intermediate temperature and a high temperature, then concentration distribution of the intermediate temperature and concentration distribution of the high temperature are converted into concentration distribution of the low temperature according to ionization rates of a dopant at different temperatures, thus the concentration distribution of the low temperature is the highest, the concentration distribution of the intermediate temperature takes the second place, the concentration distribution of the high temperature is the lowest, then the concentration distribution of the low temperature is enabled to be next to an active region, the converted concentration distribution of the intermediate temperature is set behind the concentration distribution of the low temperature, the concentration distribution of the high temperature is set behind the concentration distribution of the intermediate temperature, a junction point of the concentration distributions is a part where the concentration distributions have the same concentration, one of the concentration distributions with the overlapped concentration is removed, and finally a terminal region having doped region concentration distribution with three different slopes is formed.
Description
Technical field
The present invention relates to a kind of terminal structure of silicon carbide device, will not be with temperature more particularly to one kind
Spend the terminal structure for significantly changing and being greatly lowered the sic semiconductor device of breakdown voltage.
Background technology
Less than 250 DEG C mostly be can only operate in using the traditional integrated circuit of silicon device, it is impossible to meet high temperature,
High power and high frequency etc. are required.Central, novel semiconductor material carborundum (SiC) is most gazed at and is ground by people
Study carefully.
Manufacturing silicon carbide semiconductor material has broad-band gap, high saturation drift velocity, high heat conductance, high critical breakdown potential
The outstanding advantages such as field, are particularly suitable for making high-power, high pressure, high temperature, Flouride-resistani acid phesphatase electronic device.
Carborundum energy gap width (210eV≤Eg≤ 710eV), leakage current several orders of magnitude less than silicon.
And, carborundum heat stability is fabulous, and up to more than 800 DEG C, it ensure that in hot operation intrinsic temperature
When long-term reliability.By analyzing the figure of merit, such as the Johnson figures of merit (breakdown potentials of the JFOM- by material
, saturated electron drift velocity to be reflecting high power, the high-frequency performance of corresponding device), the Keyes figures of merit
(KFOM- reflects opening for corresponding device by the thermal conductivity of material, saturated electron drift velocity and dielectric constant
Close speed and thermal limit) and the hot figure of merit (QFOM- is by the breakdown electric field of material, breakdown electric field and thermal conductivity
The heat dispersion of reflection corresponding device), it is found that carborundum SiC these figures of merit are all partly led than existing frequently-used
Body material is higher by a lot, is to realize a kind of ideal material with reference to high temperature with high-frequency high-power.
Carborundum breakdown electric field is higher, is 8 times of silicon materials, and this is very key to power device.Conducting resistance
It is cube to be inversely proportional to breakdown electric field, so the conducting resistance of carborundum SiC power devices only has silicon device
One of hundred to two percentages, the significant energy consumption for reducing electronic equipment.Therefore, carborundum SiC power devices
It is described as driving " green energy resource " device of " new forms of energy revolution ".With manufactured by carborundum SiC
The power device for coming has the low advantage than conducting resistance, senior engineer's working frequency and hot operation stability, possesses
Very wide application prospect.
With the successive commercialization of 6H, 4H-SiC body material, carborundum SiC device technique, such as aoxidize,
Doping, etching and metal, semiconductor contact, all day by day ripe, these developments for carborundum SiC device
And application is laid a good foundation.
High anti-bias voltage and big can typically be born with the longitudinal power device manufactured by carborundum SiC out
Forward conduction electric current, different power devices has different specifications, the anti-bias voltage which can bear and
Forward current is different.Longitudinal power device can be divided into active area and termination environment, terminal in regional structure
Area is usually the edge in periphery followed by source region.There is PN junction in active area, PN junction terminates what active area
Periphery, generally, the termination of PN junction can cause the bending of PN junction, when reverse-biased, the electric field phase of this local
It is height to the electric field of more plane-parallel PN junction in active area, so as to the phenomenon for puncturing in advance occurs.For
This internal field is reduced, termination environment can be placed in the periphery of active area, the office of active area periphery is improved with Come
Portion's breakdown voltage, especially periphery surface breakdown voltage, make outside active area, i.e. the breakdown voltage of termination environment
Be close to plane-parallel breakdown voltage in active area, be finally so that the actual breakdown voltage of whole device not because
It is greatly lowered for the curvature of the termination of the PN junction at the edge of active area.From for device physicses, longitudinal power
The structure that the terminal portion of device is the most frequently used has field plate, and field limiting ring, the knot terminal court of a feudal ruler stretch (JTE), laterally become and mix
Miscellaneous (VLD), Resurf etc., also have be with it is therein combine constituted as field plate adds field limiting ring.Here to
What is discussed is to extend the relevant structure formed by (JTE), junction termination structures and Resurf structures with knot terminal
Device physicses are substantially identical.Resurf structures are that J.Appels put forward in 1979, this
Structure is as shown in figure 1, the region 3 in Fig. 1 represents active area p-type doped region, region 3 and region 4
Intersection is the border of active area, and the edge in region 4 to chip is termination environment, and Appels is pointed out, if region
4 is first-class doped in concentrations profiled area, and the doping content in Ruo Guozhe areas is too high or too low, in puncturing for termination environment surface
Voltage all can be low.The change of surface field intensity as shown in Figure 2 with position, if concentration mistake shown in figure
Electric fields of the Gao Ze at the b of position is more high than other places, and position b first can puncture, if doping is too low,
Can first puncture in position a, if fruit doping content is 1e12cm-2, in reverse bias, position a and position b
Electric field intensity substantially can simultaneously reach the limit of field intensity and puncture, as shown in figure 3, breakdown voltage at this moment
It is the maximum breakdown voltage of the optimization of this structure, the accumulation dopant dose punctured with each position of termination environment
Be it is relevant, with doping depth distribution it is unrelated.Research later finds, if the doping in fruit region 4 is linear
More optimization of the meeting for laterally becoming than constant doping, (Institute of Physics, Semicond.Sci.
Technol.17 (2002) 721-728), Fig. 4 is the schematic diagram of linear transverse varying doping, the region in Fig. 4
5 is to represent the uniform region of doping content, and the area in region 5 is directly proportional to doping content, the doping in region 5
Concentration is different with the concentration in region 3, and general Come says the much bigger of the concentration ratio region 5 in region 3.
Puncture and the accumulation dopant dose of each position of termination environment is the depth distribution nothing of relevant ， They and doping
Close.If the doping in fruit region 5 is the linear transverse Variable Composition for optimizing, the electric field when generation is punctured is with position
Point Fabric meetings are put as shown in figure 5, the area that surrounded of the electric field curve of Fig. 5 is bigger than Fig. 3, so which punctures
Voltage can provide bigger breakdown voltage in the case where Accounting has equal area, technique make on, outlet to be made
Property variety lateral doping (as shown in Figure 5) is highly difficult, and general implementation is by the mask windows in gradual change
Mouthful on make ion implanting then activate, as shown in fig. 6, original terminal area 5 with linear transverse become
Doped region becomes the distance between multiple discrete doped regions, discrete doped region, the i.e. empty ratios of Accounting, with low-doped
Region and increase, the horizontal integral area of the concentration of the discrete doped region of Fig. 6 (represents the dopant of accumulation
Amount) should be suitable with the horizontal integral area in the linear horizontal varying doping area of original continuous Fig. 5, Tu6Shi Ba areas
Domain 5 is divided into 6 little equal portions to calculate duty, if be divided into the more cell calculating dutycycle, gained
Horizontal integral area closer to the linear horizontal varying doping area of original Come horizontal integral area.Commonly referred to as end of Fig. 6
End structure extends (MFZ-JTE) for multi-ring-knot terminal.The concentration of the discrete doped region in the terminal structure of Fig. 6
Optimal value is have selected once with spacing, then the breakdown voltage for obtaining is optimization, if the concentration of fruit doping changes
, then breakdown voltage will reduce, with deviateing optimal value and be more remote decline bigger.What carborundum Come is said,
The effective ion (percentage ratio that can be activated) of the p-type Can Za Li Aluminum of injection is temperature-dependent, such as
Shown in Fig. 7, for example doping content for 1e17cm-2 aluminium atom in room temperature, ionizing (ionized
Dopant fraction) only 0.2, it is about 0.6 at 200 DEG C, differs as many as 4 times.It is P
Type aluminum doping content (concentration that have activated) is for same injection region, actually active at 200 DEG C
As many as 4 times when concentration is room temperature, this is to Resurf, or VLD, or how discrete area-knot terminal extends
(MFZ-JTE) all it is fatal for, being may be in a certain temperature when the doping of the termination environment of this structure
Being optimization, when temperature is significantly changed, such as 200 DEG C being risen to from room temperature, actually active concentration becomes room
As many as about 4 times when warm, just significantly away from original optimal value, this can be such that breakdown voltage greatly drops to doping content
It is low, if not solving this problem, base what Resurf or VLD, or JTE, or MFZ-JTE etc. do not apply to
Terminal structure of the what as carborundum.
The content of the invention
Disclosed terminal structure can avoid the shortcoming of the above, can make the breakdown voltage of terminal will not
Significantly changing with temperature and being greatly lowered, also will not be because of surface state charge, inter-level dielectric electric charge or passivation layer
The change of electric charge and be greatly lowered.
Basic device physical principle used by the present invention is Resurf, is further optimized for horizontal doping content XIAN
Property gradual change Resurf, technique making gradual change perforate injects ion realizing.The present invention core concept be
Just arrange properly when certain part in terminal structure is in high temperature in design and be responsible for bearing back-biased voltage,
Certain some is worked in low temperature, in temperature changing process, how automatically to be had in terminal structure
Corresponding part Come bears backward voltage, and the main points for designing the terminal structure of the present invention are as follows with key step：
(1). device temperature range to be worked is ordered, here with low temperature as 25 DEG C of room temperature, high temperature is
As a example by 200 DEG C, actually low-temperature values and high temperature values (i.e. the low doping concentration distribution of terminal with it is highly doped
Concentration distribution) can choose at random.
(2). first design the terminal structure in low temperature, such as the structure at 25 DEG C, wherein needing adjustment
Parameter potentially include doping content (i.e. implantation dosage be actually active dense Jing after ionization at 25 DEG C
Degree), the width of different doped regions, the spacing between doped region, the total length of terminal doped region, doping
Epitaxy layer thickness and concentration under area etc., if the optimization doping concentration distribution at 25 DEG C is
Line 25 in Fig. 8.
(3). the concentration of high temperature terminal is designed with low temperature terminal structure (i.e. concentration distribution) Come for designing before
Distribution, it is assumed that the concentration constant (can actually increased 20%, this affects little, ignores here) of extension,
Before, being substantially all as described in (2) changes little to other parameters, then the concentration distribution in 200C should
Should be much the same with the distribution in low temperature, main points are the ionization level at 200 DEG C when being 0.6,25 DEG C
It is 0.2, the concentration to the actually active concentration of same injection ion at 200 DEG C increases as 4, so
At 200 DEG C, concentration distribution is converted into the concentration distribution of the line 200 in Fig. 8.
(4). terminal concentration distribution of the design one in about medium temperature, this medium temperature is 90 DEG C here,
Ionization level when 90 DEG C is about 0.3, uses the terminal concentration distribution of the argument of (3) before, medium temperature to convert into
For the concentration distribution of the line 90 in Fig. 8.
(5). and then the concentration distribution of different temperatures is bonded together using the following method：First the concentration point of low temperature
Cloth followed by source region, afterwards medium temperature (i.e. 90 DEG C) be connected on low temperature concentration distribution after, engagement
Point is, in place of both same concentrations, then the part for belonging to low temperature for overlapping to be taken away, afterwards high temperature
Be connected on medium temperature concentration distribution after, in place of abutment is their same concentrations, overlap is belonged to middle
Temperature is taken away, last whole concentration distribution as shown in figure 9, this is the valid density distribution in low temperature,
In low temperature, when device is in reverse bias, region 25 ', 90 ' and 200 ' are all used for bearing backward voltage,
During high temperature, valid density distribution is as shown in Figure 10, at this moment mainly region 200 " for bearing backward voltage,
As active area, except edge part becomes depletion region, most of region does not exhaust in other regions,
It is potential minimum.
More than that temperature range is divided into three sections, i.e., low (25 DEG C), in (90 DEG C) and high (200 DEG C) designing,
The temperature of two-stage nitration or more than three sections can also be divided into design.Technique makes and can note on gradual change mask window
Enter ion to realize, can be adulterated accordingly plus appropriate injection dopant dose through gradual change mask window
Area and the empty ratios of Accounting, so as to the effective result for obtaining optimizing.
Ionization level (the ionized dopant because dopant dose can be avoided with the termination environment of present invention design
Fraction) vary with temperature and change, breakdown voltage can be also made with the method for the termination environment of present invention design
It is impacted by the impurity concentration difference of surface density of states or passivation layer, needed with the termination environment of present invention design
To use larger chip area.
Description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, together with embodiments of the present invention for explaining this
Invention, is not construed as limiting the invention：
Fig. 1 is the cross-sectional of the power discrete device that terminal is Resurf structures；
Fig. 2 is surface electric field distribution schematic diagram when the p-type doped region concentration that terminal is Resurf structures does not optimize；
Surface electric field distribution schematic diagram when Fig. 3 is the p-type doped region concentration optimization that terminal is Resurf structures；
Fig. 4 is the cross-sectional of the power discrete device that terminal is Line gradual change Resurf structures；
Surface electric field distribution when Fig. 5 is the p-type doped region concentration optimization that terminal is Line gradual change Resurf structures shows
It is intended to；
Fig. 6 is that injection is adulterated come the schematic diagram for realizing Line gradual change Resurf terminal structures on gradual change mask window；
Fig. 7 is ionization level of the aluminum in 4H-SiC in different temperatures；
Fig. 8 is that the concentration distribution that the doping content that terminal p type island region optimizes in different temperatures is converted in 25C is illustrated
Figure；
Fig. 9 is the doping concentration distribution schematic diagram that terminal p type island region of the present invention optimizes in 25C；
Figure 10 is the doping concentration distribution schematic diagram that terminal p type island region of the present invention optimizes in 200C；
Figure 11 is the cross-sectional that the embodiment of the present invention forms that on surface oxide layer active area injects perforate；
Figure 12 is the cross-sectional that the embodiment of the present invention forms that on surface oxide layer perforate is injected in termination environment；
Figure 13 is that the embodiment of the present invention forms p-type doped region in silicon carbide part；
Figure 14 is that the embodiment of the present invention forms contact hole schematic diagram in active area；
Figure 15 is that the embodiment of the present invention leaves one layer of Nickel (Schottky metal contact) in silicon carbide metal contact position
Schematic diagram；
Figure 16 is the schematic diagram that the embodiment of the present invention completes aluminium alloy layer on silicon carbide device surface.
Reference markss table：
1 silicon carbide substrates
2 silicon carbide epitaxial layers
The type area of the P in 3 active areas
Resurf p type island regions in 4 termination environments
5 termination environments are the Line gradual change Resurf p type island regions of continuous doping
Discrete doped p-type area of 6 termination environments for Line gradual change Resurf
10 silicon dioxide layers
20 inter-level dielectrics
30 lithography coatings
40 Ni metal levels (Schottky metal contact)
50 aluminium alloy layers
Specific embodiment
The present invention can be used in various silicon carbide device terminal structures, now lift one about power schottky
Diode embodiment come introduce the present invention one of which application.How mainly introduce using this in embodiment
The steps such as the one of which process of invention, the wear down and back face metalization of silicon carbide whisker disk are omitted.
Embodiment：
As shown in figure 11, first silicon carbide is cleaned up, layer of silicon dioxide is deposited on surface afterwards
(thickness is 0.5um to 2.0um), in silica surface area shallow lake lithography coating, exposes part using mask
Silicon dioxide, then the part of silica to exposing carry out dry corrosion, until expose silicon carbide epitaxial layers
Upper surface, in silica formed mask perforate, then dispose lithography coating, then to silicon chip table
Less than P-type dopant of injection, (aluminum (Al) and boron (B), dosage is 1e14/cm in face2To 1e16/cm2,
Energy is 100KeV to 2000KeV).
As shown in figure 12, surface silica dioxide is disposed, and layer of silicon dioxide (thickness is deposited on surface afterwards
For 0.5um to 2.0um), in silica surface area shallow lake lithography coating, part dioxy is exposed using mask
SiClx, then the part of silica to exposing carry out dry corrosion, until expose the upper of silicon carbide epitaxial layers
Surface, forms multiple mask perforates in silica, then disposes lithography coating, then to silicon chip table
Less than P-type dopant of injection, (aluminum (Al) and boron (B), dosage is 1e14/cm in face2To 2e15/cm2,
Energy is 100KeV to 2000KeV).
As shown in figure 13, in order to avoid the Si in the SiC in high annealing can be evaporated, in wafer top
Then deposited graphite (C) layer in surface just carries out high annealing heat treatment as protection, and annealing temperature is about
Between 1100 DEG C to 1600 DEG C, after completing annealing, surface graphite (C) layer is just disposed.
As shown in figure 14, silicon carbide is cleaned up, first deposits non-impurity-doped two afterwards in epitaxial layer most surface
Silicon oxide layer (thickness is 0.1um to 0.5um), then deposits boro-phosphorus glass (thickness is 0.1um to 0.8um),
Inter-level dielectric is formed, and then in inter-level dielectric surface accumulation lithography coating, portion is exposed using contact hole mask
Divide inter-level dielectric, then the part inter-level dielectric to exposing carries out dry corrosion, until exposing silicon carbide epitaxy
The upper surface of layer, forms contact hole mask perforate in inter-level dielectric.
As shown in figure 15, one layer of Nickel (Ni) layer 9 is deposited in contact hole bottom and inter-level dielectric upper surface, then clearly
Lithography coating is removed, through Life-off methods, unwanted Ni metal levels is gone when Stripping is from lithography coating
Fall.
As shown in figure 16, appropriate annealing process is carried out to Ni metal levels, common temperature range is 600 to 800C,
The rapid thermal annealing 60 seconds in nitrogen Gas atmosphere, then above the device one layer of aluminium alloy of deposition 50 (thickness is
0.8um to 10um), row metal etch is entered by metal mask then, launch site metal pedestal layer and terminal is formed
Area's field plate.
Finally it should be noted that：The preferred embodiments of the present invention are these are only, this is not limited to
Bright, the present invention can be used to be related to manufacture various semiconductor power discrete device (for example, insulated gate bipolar transistors
Pipe (Trench IGBT) or trench diode), the present invention can be used to prepare partly leading for 600V to 15000V
Body power discrete device, embodiments of the invention are made an explanation with N-type channel device, and the present invention also can use
In P-type channel device, although being described in detail to the present invention with reference to embodiment, for this area
For technical staff, which still can be modified to the technical scheme described in previous embodiment, or right
Which part technical characteristic carries out equivalent, but it is all within the spirit and principles in the present invention, made
Any modification, equivalent substitution and improvements etc., should be included within the scope of the present invention.
Claims (9)
1. a kind of terminal structure of sic semiconductor device, including following characteristics：
1. there are two different doped regions termination environment；
2. the concentration of each doped region is all linear horizontal change, has a concentration distribution slope；
3. the concentration distribution slope ratio near the doped region of active area is big away from the doping content slope of active area；
4. two different doped regions are bonded together, higher concentration distribution followed by source region, it is relatively low
Concentration distribution be connected on it is higher after, abutment be in place of both same concentrations, then overlap it is dense
The one of both of degree is taken away, and final concentration distribution has two different slopes.
2. the concentration of each doped region according to claim 1 its (2) is all linear horizontal change, its feature
It is that described doped region is all with dopant ion being injected on gradual change mask window implementing, is used in technique
The Accounting of appropriate discrete doped region is empty to be compared to implement change rate of concentration.
3. discrete doped region according to claim 2, it is characterised in that the concentration of described discrete doped region
The horizontal integral area dopant dose of accumulation (represent) should be with the linear horizontal varying doping of original continuous concentration
The horizontal integral area in area is suitable.
4. a kind of terminal structure of sic semiconductor device, including following characteristics：
1. there are three different doped regions termination environment；
2. the concentration of each doped region is all linear horizontal change, has a concentration distribution slope；
3. near active area doped region concentration distribution maximum slope, farthest away from the doping content of active area
Slope is minimum, and the position of intermediate concentration distribution slope is between；
4. three different doped regions are bonded together, maximum concentration distribution followed by source region, in
Between concentration distribution be connected on maximum concentration distribution after, least concentration distribution be connected on intermediate concentration distribution after,
Abutment is, in place of both same concentrations, then the one of both for overlapping concentration to be taken away, and final is dense
Degree is distributed with three different slopes.
5. the concentration of each doped region according to claim 4 its (2) is all linear horizontal change, its feature
It is that described doped region is all with dopant ion being injected on gradual change mask window implementing, is used in technique
The Accounting of appropriate discrete doped region is empty to be compared to implement change rate of concentration.
6. discrete doped region according to claim 5, it is characterised in that the concentration of described discrete doped region
The horizontal integral area dopant dose of accumulation (represent) should be with the linear horizontal varying doping of original continuous concentration
The horizontal integral area in area is suitable.
7. a kind of terminal structure of sic semiconductor device, including following characteristics：
1. there is the different doped region of more than three termination environment；
2. the concentration of each doped region is all linear horizontal change, has a concentration distribution slope；
3., near the doped region concentration distribution maximum slope of active area, then the doping of low concentration slope is had
After area is placed on the doped region of higher concentration slope, the doped region concentration slope farthest away from active area is minimum；
4. all different doped regions are bonded together, maximum concentration distribution followed by source region, so
After having the doped region of low concentration slope to be connected on the doped region of higher concentration slope afterwards, abutment is two
In place of the same concentrations of person, then the one of both for overlapping concentration is taken away, final concentration distribution has and is more than
Three different slopes, can be close to a camber line.
8. the concentration of each doped region according to claim 7 its (2) is all linear horizontal change, its feature
It is that described doped region is all with dopant ion being injected on gradual change mask window implementing, is used in technique
The Accounting of appropriate discrete doped region is empty to be compared to implement change rate of concentration.
9. discrete doped region according to claim 8, it is characterised in that the concentration of described discrete doped region
The horizontal integral area dopant dose of accumulation (represent) should be with the linear horizontal varying doping of original continuous concentration
The horizontal integral area in area is suitable.
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| CN108447896A (en) * | 2018-04-08 | 2018-08-24 | 深圳市太赫兹科技创新研究院 | The manufacturing method of silicon carbide power device terminal structure |
| US12080806B2 (en) | 2018-11-21 | 2024-09-03 | Byd Semiconductor Company Limited | Fast recovery diode and manufacturing method thereof |
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| US20110233714A1 (en) * | 2010-03-24 | 2011-09-29 | Fuji Electric Systems Co. Ltd. | Semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108447896A (en) * | 2018-04-08 | 2018-08-24 | 深圳市太赫兹科技创新研究院 | The manufacturing method of silicon carbide power device terminal structure |
| CN108447896B (en) * | 2018-04-08 | 2021-02-05 | 深圳市太赫兹科技创新研究院 | Manufacturing method of terminal structure of silicon carbide power device |
| US12080806B2 (en) | 2018-11-21 | 2024-09-03 | Byd Semiconductor Company Limited | Fast recovery diode and manufacturing method thereof |
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