CN108444941A - The temperature monitoring method of terahertz light spectrometer - Google Patents
The temperature monitoring method of terahertz light spectrometer Download PDFInfo
- Publication number
- CN108444941A CN108444941A CN201810240096.7A CN201810240096A CN108444941A CN 108444941 A CN108444941 A CN 108444941A CN 201810240096 A CN201810240096 A CN 201810240096A CN 108444941 A CN108444941 A CN 108444941A
- Authority
- CN
- China
- Prior art keywords
- transistor
- resistance
- capacitance
- terahertz light
- light spectrometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000012544 monitoring process Methods 0.000 title claims abstract description 21
- 238000012545 processing Methods 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 230000003321 amplification Effects 0.000 claims description 8
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 7
- 238000010183 spectrum analysis Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 238000004458 analytical method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000003672 processing method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
Abstract
The present invention provides a kind of temperature monitoring methods of terahertz light spectrometer, are detected for the failure to long-range terahertz light spectrometer signal processing circuit, and the signal processing circuit includes amplifying circuit, the method includes：(10) detection instruction is sent to long-range terahertz light spectrometer；(20) data volume for the long-range terahertz light spectrometer transmission that monitoring receives, the fault type of long-range terahertz light spectrometer is determined according to the data volume；(30) temperature data acquisition is carried out based on determining failure.The temperature monitoring method of the terahertz light spectrometer of the present invention can be within a short period of time, judge to belong to native instructions system problem or peripheral signal processing system problem when terahertz light spectrometer failure in a manner of simple, accurate, reliable basis is provided convenient for searching and solving in time failure for Field Force.
Description
Technical field
The invention belongs to terahertz light spectrometer technical fields, and in particular to a kind of terahertz light using spectral analysis technique
The temperature monitoring method of spectrometer.
Background technology
The application of terahertz light spectrometer is increasingly extensive.When for remotely being safeguarded using terahertz light spectrometer, producer is past
Toward that can not judge which kind of failure belonged to by the monitoring of short time, because of not only spectrum analysis dependent instruction and component
There may be failures for execution, and the links such as enhanced processing after detecting spectroscopic data may also break down.Analysis event
The model of barrier is therefore all complex, when analyzing soil property ingredient using spectral analysis technique, the performance of tera-hertz spectra instrument
There is certain influence for prediction effect, and different prediction model method for building up has also been embodied during prediction and extremely weighed
The effect wanted.Even if using the spectral instrument of same model sometimes, the method that prediction model is established is different, obtained detection effect
Fruit is also different, wherein mainly using the methods of principle component regression, offset minimum binary and artificial neural network.Also have very much
Scholar compares a variety of data processing methods, as a result shows that each method has the characteristics that itself, but specifically used
Which kind of data processing method carries out the testing result that modeling can most be had, and one is not obtained in current achievement in research
Exact conclusion.The time cost that this complexity analysis method is brought causes bad experience to user.
Invention content
In view of the above analysis, make to shorten failure detection time and carry out proper temperature acquisition based on troubleshooting scenario
Industry, the main purpose of the present invention is to provide a kind of temperature monitoring methods of terahertz light spectrometer, for long-range terahertz light
The failure of spectrometer signal processing circuit is detected, and the signal processing circuit includes amplifying circuit, the method includes：
(10) detection instruction is sent to long-range terahertz light spectrometer；
(20) data volume for the long-range terahertz light spectrometer transmission that monitoring receives, determines remotely too according to the data volume
The fault type of hertz spectrometer；
(30) temperature data acquisition is carried out based on determining failure.
Further, the step (10) includes：
(101) instruction of the first kind is sent to long-range terahertz light spectrometer, the instruction of the first kind is remotely too
Expected time on hertz spectrometer is less than at the first time；
(102) interval is at least after first time, sends the instruction of Second Type to long-range terahertz light spectrometer, and described second
Expected time of the instruction of type on long-range terahertz light spectrometer was less than for the second time, and second time is less than first
Time；
(103) after being spaced at least the second time, the instruction of the first kind is sent again to long-range terahertz light spectrometer.
Further, it if the data volume for receiving long-range terahertz light spectrometer after experience first time is A bytes, then undergoes
The data volume that long-range terahertz light spectrometer is received after second time is B byte, then is received after undergoing first time long-range
The data volume of terahertz light spectrometer is C bytes；Then the step (20) includes：
When (A+C)/(A+2B+C) is less than the first predetermined threshold value, long-range terahertz light spectrometer signal processing electricity at this time is determined
Road fault-free；
When (A+B)/(B+C) is less than the second predetermined threshold value and (A+C)/(A+2B+C) is more than the first predetermined threshold value, determine
Long-range terahertz light spectrometer signal processing circuit possible breakdown at this time starts third type instruction to long-range terahertz light spectrometer；
The data after third type instruction is analyzed on long-range terahertz light spectrometer are received, with preset failure parameter reference values
It is compared, the long-range terahertz light spectrometer presence signal handling failure is determined when more than preset failure parameter reference values.
Further, the first kind instruction is that spectrum analysis instructs, and the third type instruction is to be put by described
Big circuit carries out the instruction of signal amplification, and when the amplifying circuit is to obtain compared with preset failure parameter reference values
The amplifying circuit used.
Further, the Second Type instruction is inquiry operating state instruction, return current time instructs, it is current to return
One of GPS position information instruction.
Further, the amplifying circuit includes：The first capacitance C1 including number consecutively --- the 14th capacitance C14 is total
The first resistor R1 of 14 capacitances, number consecutively --- the 25th resistance R25 totally 25 resistance, number consecutively the one or two pole
Pipe D1 --- third diode D3 totally 3 diodes, number consecutively the first transistor T1 --- the 14th transistor T14 totally 14
A transistor, addition and subtraction circuit, signal input part Vin, signal output end Vout, power end Vs and ground terminal, described
14 resistance R14 are resistance value adjustable resistance, and the resistance value of remaining 24 resistance fixes, wherein the first end connection of the first capacitance C1 the
The first end of four resistance R4, the first end of the second end connection power supply Vs and the 5th resistance R5 of the 4th resistance R4, the first capacitance
The second end of C1 is grounded；The first end of 4th resistance R4 be also connected with the anode of the first diode D1, first resistor R1
One end, the first end of second resistance R2, the first end of the second capacitance C2, the first end of 3rd resistor R3, the first diode D1's
Cathode connects the anode of the second diode D2, and the cathode connection of the second diode D2 passes through the 6th resistance R6 ground connection, first resistor
The emitter of the second end connection the first transistor T1 of R1, the base stage of the first transistor T1 connect the cathode of the second diode D2,
The collector of the first transistor T1 connects the first end of the 7th resistance R7, and the second end of the 7th resistance R7 is separately connected the 12nd electricity
The first end of R12 and the first end of thirteenth resistor R13 are hindered, the second end connection third diode D3 of second resistance R2 is just
The cathode of pole, third diode D3 is separately connected the first end of third capacitance C3, the first end of the 8th resistance R8 and the second crystalline substance
The base stage of body pipe T2, the second end ground connection of the second capacitance C2；The transmitting of the second end connection second transistor T2 of 3rd resistor R3
The collector of pole, second transistor T2 is separately connected the first end, the first end of the 5th capacitance C5, the 4th crystal of the 4th capacitance C4
The collector of pipe T4, the 9th resistance R9 first end by the first end of the tenth resistance R10 connection eleventh resistors R11, the tenth
The first end of one resistance R11 is also connected with the collector of third transistor T3, the collector of the 5th transistor T5, the 6th capacitance C6
The first end of first end, the 7th capacitance C7, the emitter of the second end connection third transistor T3 of the 5th resistance R5, third crystal
The base stage of pipe T3 is separately connected the base stage of the 4th transistor T4 and the base stage of the 8th transistor T8, the base stage of the 5th transistor T5
Between the second end and the 14th resistance R14 that connect eleventh resistor R11, the emitter of the 5th transistor T5 is separately connected the 6th
The sliding of the collector, the 14th resistance R14 of the second end of capacitance C6, the second end of the 7th capacitance C7 and the 8th transistor T8
Contact is connected to the second end of eleventh resistor R11, and the second end of the 9th resistance R9 connects the base stage and the of the 4th transistor T4
The collector of seven transistor T7, the emitter of the 4th transistor T4 are separately connected the second end of the 4th capacitance C4, the 5th capacitance C5
Second end, the base stage of the 7th transistor T7 and the collector of the tenth two-transistor T12, third capacitance C3 second end connection
The collector of the second end of 8th resistance R8 and the emitter and the 7th transistor T7 of the 6th transistor T6, second resistance R2's
Second end connects the anode of third diode D3, and the cathode of third diode D3 connects the first end of the 8th resistance R8；14th
The second end of resistance R14 is separately connected the first end of the 19th resistance R19 and the first end of the 20th resistance R20, and the 12nd
The second end of resistance R12 is separately connected the base stage of the emitter and the 6th transistor T6 of the 9th transistor T9, thirteenth resistor R13
Second end be separately connected the emitter of the tenth transistor T10, the collector of the 7th transistor T7, signal input part Vin and
The first end of 15th resistance R15；The second end of 15th resistance R15 is separately connected the first end of the 9th capacitance C9, the 20th
The first end of one resistance R21 and the base stage of the 9th transistor T9, the second end of the 9th capacitance C9 and the 21st resistance R21's
Second end is grounded；The collector of 6th transistor T6 is separately connected the second end and the 11st transistor T11 of the tenth capacitance C10
Collector；The collector of tenth two-transistor T12 is separately connected the second end of the 17th resistance R17, the 22nd resistance R22
First end and the 14th transistor T14 collector；The emitter and the tenth two-transistor T12 of 11st transistor T11
Emitter be all connected with the first end of the 25th resistance R25, the second end of the 25th resistance R25 passes through the 14th capacitance
C14 is grounded, and the second end of the 25th resistance R25 is also connected with the second end of the 23rd resistance R23, the 24th resistance R24
Second end and the 13rd capacitance C13 first end, the 13rd capacitance C13 second end ground connection, the collection of the 9th transistor T9
Electrode is separately connected the base stage of the tenth two-transistor T12 and the first end of the 23rd resistance R23, the tenth transistor T10's
Collector connects the first end of the 24th resistance R24；The base stage of 7th transistor T7 is separately connected the of the 16th resistance R16
The first end of one end and the 8th capacitance C8, the second end of the 16th resistance R16 and the second end of the 8th capacitance C8 connect respectively
Connect the base stage of the tenth transistor T10；The emitter of 7th transistor T7 is separately connected the 22nd electricity by the 17th resistance R17
The first end of R22 and the first end of the 11st capacitance C11 are hindered, the base stage of the tenth two-transistor T12 connects the 11st capacitance C11
Second end, the base stage of the 7th transistor T7 is separately connected the base of the base stage and the 13rd transistor T13 of the 14th transistor T14
Pole, the collector of the 14th transistor T14 connect the collector of the tenth two-transistor T12, the emitter of the 14th transistor T14
It is separately connected the emitter of the 13rd transistor T13 and the positive input terminal of the addition and subtraction circuit, the 13rd transistor T13
Collector connect the second end of the 19th resistance R19, the second end of the 22nd resistance R22 is separately connected the 20th resistance
The second end of the first end of the second end of R20 and the 12nd capacitance C12, the 12nd capacitance C12 is separately connected the 8th transistor
The output end connection signal of the negative input end of the emitter of T8 and the addition and subtraction circuit, the addition and subtraction circuit is defeated
Outlet；The second end of thirteenth resistor R13 is also connected with the collector of the 6th transistor T6.
Technical scheme of the present invention has the following advantages：
The temperature monitoring method of the terahertz light spectrometer of the present invention can within a short period of time, in a manner of simple, accurate
Judge to belong to native instructions system problem or peripheral signal processing system problem when terahertz light spectrometer failure, convenient for being live
Personnel search and solve in time failure and provide reliable basis；The amplifying circuit is based on asymmetric feedback and amplification principle, can
Adaptive feedback is carried out for different terahertz light spectrometers to adjust with amplification, is reduced in terms of drift compared to existing amplifying circuit
At least 45%, it is very suitable for as the reference enhanced processing during malfunction test, can is the work temperature for spectrometer
Degree monitoring brings high reliability.
Description of the drawings
Fig. 1 shows the flow chart of this method.
Fig. 2 shows the circuit diagrams of amplifying circuit according to the present invention.
Specific implementation mode
As shown in Figure 1, the temperature monitoring method of the terahertz light spectrometer of the present invention, for believing long-range terahertz light spectrometer
The failure of number processing circuit is detected, and the signal processing circuit includes amplifying circuit, the method includes：
(10) detection instruction is sent to long-range terahertz light spectrometer；
(20) data volume for the long-range terahertz light spectrometer transmission that monitoring receives, determines remotely too according to the data volume
The fault type of hertz spectrometer；
(30) temperature data acquisition is carried out based on determining failure.According to a preferred embodiment of the invention, when failure is to put
When big fault, the amplifying circuit is replaced into the signal amplification circuit of terahertz light spectrometer itself to collected work
It is amplified as temperature data, otherwise stops the monitoring to terahertz light spectrometer temperature and send out warning information to give on-site maintenance people
Member.
Preferably, the step (10) includes：
(101) instruction of the first kind is sent to long-range terahertz light spectrometer, the instruction of the first kind is remotely too
Expected time on hertz spectrometer is less than at the first time；
(102) interval is at least after first time, sends the instruction of Second Type to long-range terahertz light spectrometer, and described second
Expected time of the instruction of type on long-range terahertz light spectrometer was less than for the second time, and second time is less than first
Time；
(103) after being spaced at least the second time, the instruction of the first kind is sent again to long-range terahertz light spectrometer.
Preferably, if the data volume for receiving long-range terahertz light spectrometer after experience first time is A bytes, then the is undergone
The data volume that long-range terahertz light spectrometer is received after two times is B byte, then received after undergoing first time it is long-range too
The data volume of hertz spectrometer is C bytes；Then the step (20) includes：
When (A+C)/(A+2B+C) is less than the first predetermined threshold value, long-range terahertz light spectrometer signal processing electricity at this time is determined
Road fault-free；
When (A+B)/(B+C) is less than the second predetermined threshold value and (A+C)/(A+2B+C) is more than the first predetermined threshold value, determine
Long-range terahertz light spectrometer signal processing circuit possible breakdown at this time starts third type instruction to long-range terahertz light spectrometer；
The data after third type instruction is analyzed on long-range terahertz light spectrometer are received, with preset failure parameter reference values
It is compared, the long-range terahertz light spectrometer presence signal handling failure is determined when more than preset failure parameter reference values.
Preferably, the first kind instruction is that spectrum analysis instructs, and the third type instruction is to pass through the amplification
Circuit carries out the instruction of signal amplification, and the amplifying circuit is to make when obtaining compared with preset failure parameter reference values
Amplifying circuit.
Preferably, the Second Type instruction is inquiry operating state instruction, return current time instructs, it is current to return
One of GPS position information instruction.
Preferably, as shown in Fig. 2, the amplifying circuit includes：The first capacitance C1 including number consecutively --- the 14th
Capacitance C14 totally 14 capacitances, number consecutively first resistor R1 --- the 25th resistance R25 totally 25 resistance, number consecutivelies
The first diode D1 --- third diode D3 totally 3 diodes, number consecutively the first transistor T1 --- the 14th is brilliant
Body pipe T14 14 transistors, addition and subtraction circuit, signal input part Vin, signal output end Vout, power end Vs and connects totally
Ground terminal, the 14th resistance R14 are resistance value adjustable resistance, and the resistance value of remaining 24 resistance is fixed, wherein the first capacitance C1
First end connects the first end of the 4th resistance R4, and the second end of the 4th resistance R4 connects the first of power supply Vs and the 5th resistance R5
End, the second end ground connection of the first capacitance C1；The first end of 4th resistance R4 is also connected with the anode of the first diode D1, first
The first end of resistance R1, the first end of second resistance R2, the first end of the second capacitance C2, the first end of 3rd resistor R3, first
The cathode of diode D1 connects the anode of the second diode D2, and the cathode connection of the second diode D2 is connect by the 6th resistance R6
Ground, the emitter of the second end connection the first transistor T1 of first resistor R1, the base stage of the first transistor T1 connect the two or two pole
The cathode of pipe D2, the collector of the first transistor T1 connect the first end of the 7th resistance R7, the second end difference of the 7th resistance R7
The first end of twelfth resistor R12 and the first end of thirteenth resistor R13 are connected, the second end of second resistance R2 connects third
The anode of diode D3, the cathode of third diode D3 be separately connected the first end of third capacitance C3, the 8th resistance R8 first
The base stage of end and second transistor T2, the second end ground connection of the second capacitance C2；The second end connection second of 3rd resistor R3 is brilliant
The emitter of body pipe T2, the collector of second transistor T2 be separately connected the first end of the 4th capacitance C4, the 5th capacitance C5
One end, the collector of the 4th transistor T4, the 9th resistance R9 first end pass through the tenth resistance R10 connection eleventh resistors R11
First end, the first end of eleventh resistor R11 is also connected with the current collection of the collector of third transistor T3, the 5th transistor T5
Pole, the first end of the 6th capacitance C6, the first end of the 7th capacitance C7, the second end connection third transistor T3's of the 5th resistance R5
The base stage of emitter, third transistor T3 is separately connected the base stage of the 4th transistor T4 and the base stage of the 8th transistor T8,
Between the second end and the 14th resistance R14 of the base stage connection eleventh resistor R11 of five transistor T5, the hair of the 5th transistor T5
Emitter-base bandgap grading is separately connected the second end of the 6th capacitance C6, the collector of the second end of the 7th capacitance C7 and the 8th transistor T8,
The slider of 14 resistance R14 is connected to the second end of eleventh resistor R11, and the second end connection the 4th of the 9th resistance R9 is brilliant
The collector of the base stage and the 7th transistor T7 of body pipe T4, the emitter of the 4th transistor T4 are separately connected the of the 4th capacitance C4
Two ends, the second end of the 5th capacitance C5, the base stage of the 7th transistor T7 and the collector of the tenth two-transistor T12, third electricity
The second end for holding C3 connects the collection of the second end of the 8th resistance R8 and the emitter and the 7th transistor T7 of the 6th transistor T6
Electrode, the anode of the second end connection third diode D3 of second resistance R2, the cathode of third diode D3 connect the 8th resistance
The first end of R8；The second end of 14th resistance R14 is separately connected the first end and the 20th resistance of the 19th resistance R19
The first end of R20, the second end of twelfth resistor R12 are separately connected the emitter and the 6th transistor T6 of the 9th transistor T9
Base stage, the second end of thirteenth resistor R13 be separately connected the emitter of the tenth transistor T10, the 7th transistor T7 collector,
The first end of signal input part Vin and the 15th resistance R15；The second end of 15th resistance R15 is separately connected the 9th capacitance
The base stage of the first end of C9, the first end of the 21st resistance R21 and the 9th transistor T9, the second end of the 9th capacitance C9 and
The second end of 21st resistance R21 is grounded；The collector of 6th transistor T6 is separately connected the second end of the tenth capacitance C10
With the collector of the 11st transistor T11；The collector of tenth two-transistor T12 is separately connected the second of the 17th resistance R17
It holds, the collector of the first end of the 22nd resistance R22 and the 14th transistor T14；The emitter of 11st transistor T11
It is all connected with the first end of the 25th resistance R25 with the emitter of the tenth two-transistor T12, the second of the 25th resistance R25
End by the 14th capacitance C14 ground connection, the second end of the 25th resistance R25 be also connected with the second end of the 23rd resistance R23,
The second end of 24th resistance R24 and the first end of the 13rd capacitance C13, the second end ground connection of the 13rd capacitance C13, the
The collector of nine transistor T9 is separately connected the base stage of the tenth two-transistor T12 and the first end of the 23rd resistance R23, the
The collector of ten transistor T10 connects the first end of the 24th resistance R24；The base stage of 7th transistor T7 is separately connected the tenth
The first end of six resistance R16 and the first end of the 8th capacitance C8, the second end of the 16th resistance R16 and the 8th capacitance C8's
Second end is separately connected the base stage of the tenth transistor T10；The emitter of 7th transistor T7 is connected respectively by the 17th resistance R17
Connect the first end of the 22nd resistance R22 and the first end of the 11st capacitance C11, the base stage connection of the tenth two-transistor T12
The base stage of the second end of 11st capacitance C11, the 7th transistor T7 is separately connected the base stage and the 13rd of the 14th transistor T14
The base stage of transistor T13, the collector of the 14th transistor T14 connect the collector of the tenth two-transistor T12, the 14th crystal
The emitter of pipe T14 is separately connected the emitter of the 13rd transistor T13 and the positive input terminal of the addition and subtraction circuit,
The collector of 13 transistor T13 connects the second end of the 19th resistance R19, and the second end of the 22nd resistance R22 connects respectively
The second end of the 20th resistance R20 and the first end of the 12nd capacitance C12 are connect, the second end of the 12nd capacitance C12 connects respectively
The negative input end of the emitter and the addition and subtraction circuit of the 8th transistor T8 is connect, the output end of the addition and subtraction circuit connects
Connect the signal output end；The second end of thirteenth resistor R13 is also connected with the collector of the 6th transistor T6.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (6)
1. a kind of temperature monitoring method of terahertz light spectrometer, for the failure to long-range terahertz light spectrometer signal processing circuit
It being detected, the signal processing circuit includes amplifying circuit, the method includes：
(10) detection instruction is sent to long-range terahertz light spectrometer；
(20) data volume for the long-range terahertz light spectrometer transmission that monitoring receives, long-range Terahertz is determined according to the data volume
The fault type of spectrometer；
(30) temperature data acquisition is carried out based on determining failure.
2. the temperature monitoring method of terahertz light spectrometer as claimed in claim 1, which is characterized in that
The step (10) includes：
(101) instruction of the first kind is sent to long-range terahertz light spectrometer, and the instruction of the first kind is in long-range Terahertz
Expected time on spectrometer is less than at the first time；
(102) after at least first time of interval, the instruction of Second Type is sent to long-range terahertz light spectrometer, the Second Type
Expected time of the instruction on long-range terahertz light spectrometer be less than for the second time, when second time is less than first
Between；
(103) after being spaced at least the second time, the instruction of the first kind is sent again to long-range terahertz light spectrometer.
3. the temperature monitoring method of terahertz light spectrometer as claimed in claim 2, which is characterized in that received after setting experience first time
Data volume to long-range terahertz light spectrometer is A bytes, then the number of long-range terahertz light spectrometer is received after undergoing for the second time
It is B byte according to amount, then the data volume of the long-range terahertz light spectrometer received after undergoing first time is C bytes；The then step
Suddenly (20) include：
When (A+C)/(A+2B+C) is less than the first predetermined threshold value, determine long-range at this time terahertz light spectrometer signal processing circuit without
Failure；
When (A+B)/(B+C) is less than the second predetermined threshold value and (A+C)/(A+2B+C) is more than the first predetermined threshold value, determine at this time
Long-range terahertz light spectrometer signal processing circuit possible breakdown starts third type instruction to long-range terahertz light spectrometer；
The data after third type instruction is analyzed on long-range terahertz light spectrometer are received, are carried out with preset failure parameter reference values
Compare, the long-range terahertz light spectrometer presence signal handling failure is determined when more than preset failure parameter reference values.
4. the temperature monitoring method of terahertz light spectrometer as claimed in claim 3, which is characterized in that the first kind instruction is light
Spectrum analysis instructs, and the third type instruction is the instruction of signal amplification to be carried out by the amplifying circuit, and the amplification is electric
Road is the amplifying circuit in order to be used when obtaining compared with preset failure parameter reference values.
5. the temperature monitoring method of terahertz light spectrometer as claimed in claim 3, which is characterized in that the Second Type instruction is to look into
One of ask operating state instruction, return to current time instruction, return to current GPS location information command.
6. the temperature monitoring method of terahertz light spectrometer as claimed in claim 3, which is characterized in that the amplifying circuit includes：Packet
Include the first capacitance C1 of number consecutively --- the 14th capacitance C14 totally 14 capacitances, number consecutively first resistor R1 ---
25 resistance R25 totally 25 resistance, number consecutively the first diode D1 --- third diode D3 totally 3 diodes, according to
The first transistor T1 of secondary number --- the 14th transistor T14 totally 14 transistors, addition and subtraction circuits, signal input parts
Vin, signal output end Vout, power end Vs and ground terminal, the 14th resistance R14 are resistance value adjustable resistance, remaining 24
The resistance value of a resistance is fixed, wherein the first end of the first capacitance C1 connects the first end of the 4th resistance R4, the of the 4th resistance R4
Two ends connect the first end of power supply Vs and the 5th resistance R5, the second end ground connection of the first capacitance C1；4th resistance R4's is described
First end is also connected with the anode of the first diode D1, the first end of first resistor R1, the first end of second resistance R2, the second capacitance
The first end of C2, the first end of 3rd resistor R3, the anode of the second diode D2 of cathode connection of the first diode D1, the two or two
The cathode connection of pole pipe D2 passes through the 6th resistance R6 ground connection, the transmitting of the second end connection the first transistor T1 of first resistor R1
Pole, the base stage of the first transistor T1 connect the cathode of the second diode D2, and the collector of the first transistor T1 connects the 7th resistance
The first end of R7, the second end of the 7th resistance R7 are separately connected the first end and thirteenth resistor R13 of twelfth resistor R12
First end, the anode of the second end connection third diode D3 of second resistance R2, the cathode of third diode D3 are separately connected the
First end, the first end of the 8th resistance R8 and the base stage of second transistor T2 of three capacitance C3, the second end of the second capacitance C2
Ground connection；The emitter of the second end connection second transistor T2 of 3rd resistor R3, the collector of second transistor T2 are separately connected
The first end of 4th capacitance C4, the first end of the first end of the 5th capacitance C5, the collector of the 4th transistor T4, the 9th resistance R9
By the first end of the tenth resistance R10 connection eleventh resistors R11, the first end of eleventh resistor R11 is also connected with third crystal
The collector of pipe T3, the collector of the 5th transistor T5, the first end of the 6th capacitance C6, the first end of the 7th capacitance C7, the 5th
The emitter of the second end connection third transistor T3 of resistance R5, the base stage of third transistor T3 are separately connected the 4th transistor T4
Base stage and the base stage of the 8th transistor T8, the second end of the base stage of the 5th transistor T5 connection eleventh resistor R11 and the
Between 14 resistance R14, the emitter of the 5th transistor T5 be separately connected the second end of the 6th capacitance C6, the 7th capacitance C7
The collector of two ends and the 8th transistor T8, the 14th resistance R14 slider be connected to the second of eleventh resistor R11
End, the second end of the 9th resistance R9 connect the collector of the base stage and the 7th transistor T7 of the 4th transistor T4, the 4th transistor
The emitter of T4 be separately connected the second end of the 4th capacitance C4, the second end of the 5th capacitance C5, the base stage of the 7th transistor T7 with
And the tenth two-transistor T12 collector, the second end of third capacitance C3 connects the second end of the 8th resistance R8 and the 6th brilliant
The collector of the emitter and the 7th transistor T7 of body pipe T6, the second end connection third diode D3 of second resistance R2 is just
Pole, the cathode of third diode D3 connect the first end of the 8th resistance R8；The second end of 14th resistance R14 is separately connected the tenth
The first end of nine resistance R19 and the first end of the 20th resistance R20, the second end of twelfth resistor R12 are separately connected the 9th
The second end of the base stage of the emitter of transistor T9 and the 6th transistor T6, thirteenth resistor R13 is separately connected the tenth transistor
The first end of the emitter of T10, the collector of the 7th transistor T7, signal input part Vin and the 15th resistance R15；Tenth
It is brilliant that the second end of five resistance R15 is separately connected the first end of the 9th capacitance C9, the first end of the 21st resistance R21 and the 9th
The base stage of body pipe T9, the second end of the 9th capacitance C9 and the second end of the 21st resistance R21 are grounded；6th transistor T6's
Collector is separately connected the collector of the second end and the 11st transistor T11 of the tenth capacitance C10；Tenth two-transistor T12's
Collector is separately connected the second end of the 17th resistance R17, the first end and the 14th transistor of the 22nd resistance R22
The collector of T14；The emitter of 11st transistor T11 and the emitter of the tenth two-transistor T12 are all connected with the 25th electricity
The first end of R25 is hindered, the second end of the 25th resistance R25 is grounded by the 14th capacitance C14, the 25th resistance R25's
Second end is also connected with the second end of the 23rd resistance R23, the second end and the 13rd capacitance C13 of the 24th resistance R24
First end, the second end ground connection of the 13rd capacitance C13, the collector of the 9th transistor T9 is separately connected the tenth two-transistor
The collector of the first end of the base stage of T12 and the 23rd resistance R23, the tenth transistor T10 connects the 24th resistance R24
First end；The base stage of 7th transistor T7 be separately connected the 16th resistance R16 first end and the 8th capacitance C8 first
End, the second end of the 16th resistance R16 and the second end of the 8th capacitance C8 are separately connected the base stage of the tenth transistor T10；The
The emitter of seven transistor T7 is separately connected the first end and the 11st of the 22nd resistance R22 by the 17th resistance R17
The first end of capacitance C11, the base stage of the tenth two-transistor T12 connect the second end of the 11st capacitance C11, the 7th transistor T7's
Base stage is separately connected the base stage of the base stage and the 13rd transistor T13 of the 14th transistor T14, the collection of the 14th transistor T14
Electrode connects the collector of the tenth two-transistor T12, and the emitter of the 14th transistor T14 is separately connected the 13rd transistor
The 19th electricity of collector connection of the positive input terminal of the emitter of T13 and the addition and subtraction circuit, the 13rd transistor T13
The second end of R19 is hindered, the second end of the 22nd resistance R22 is separately connected the second end and the 12nd of the 20th resistance R20
The second end of the first end of capacitance C12, the 12nd capacitance C12 is separately connected the emitter and plus-minus fortune of the 8th transistor T8
The negative input end of circuit is calculated, the output end of the addition and subtraction circuit connects the signal output end；The of thirteenth resistor R13
Two ends are also connected with the collector of the 6th transistor T6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810240096.7A CN108444941A (en) | 2018-03-22 | 2018-03-22 | The temperature monitoring method of terahertz light spectrometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810240096.7A CN108444941A (en) | 2018-03-22 | 2018-03-22 | The temperature monitoring method of terahertz light spectrometer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108444941A true CN108444941A (en) | 2018-08-24 |
Family
ID=63196159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810240096.7A Pending CN108444941A (en) | 2018-03-22 | 2018-03-22 | The temperature monitoring method of terahertz light spectrometer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108444941A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204331395U (en) * | 2014-10-29 | 2015-05-13 | 邵波 | X-ray spectrometer long distance control system |
| CN105203163A (en) * | 2015-10-28 | 2015-12-30 | 成都三匠科技有限公司 | Temperature and humidity data monitoring system based on Internet of Things |
| CN105430024A (en) * | 2016-01-11 | 2016-03-23 | 成都互触科技有限公司 | Intelligent household equipment remote debug method |
| CN105549411A (en) * | 2016-01-11 | 2016-05-04 | 成都互触科技有限公司 | Intelligent equipment wireless monitoring method |
| CN205826531U (en) * | 2016-07-07 | 2016-12-21 | 东莞理工学院 | A kind of tera-hertz spectra online acquisition detecting system based on Internet of Things |
| CN107748555A (en) * | 2016-09-12 | 2018-03-02 | 研祥智能科技股份有限公司 | Industrial computer remote monitoring and fault diagnosis system |
-
2018
- 2018-03-22 CN CN201810240096.7A patent/CN108444941A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204331395U (en) * | 2014-10-29 | 2015-05-13 | 邵波 | X-ray spectrometer long distance control system |
| CN105203163A (en) * | 2015-10-28 | 2015-12-30 | 成都三匠科技有限公司 | Temperature and humidity data monitoring system based on Internet of Things |
| CN105430024A (en) * | 2016-01-11 | 2016-03-23 | 成都互触科技有限公司 | Intelligent household equipment remote debug method |
| CN105549411A (en) * | 2016-01-11 | 2016-05-04 | 成都互触科技有限公司 | Intelligent equipment wireless monitoring method |
| CN205826531U (en) * | 2016-07-07 | 2016-12-21 | 东莞理工学院 | A kind of tera-hertz spectra online acquisition detecting system based on Internet of Things |
| CN107748555A (en) * | 2016-09-12 | 2018-03-02 | 研祥智能科技股份有限公司 | Industrial computer remote monitoring and fault diagnosis system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105910730B (en) | A kind of on-line detecting system and its detection method of high-power IGBT module operation junction temperature | |
| CN103728429B (en) | On-line water quality monitoring method and Monitoring systems | |
| CN205898730U (en) | Multichannel polytypic sensor capability test system | |
| CN106053551A (en) | Multi-channel multi-type sensor capability test system | |
| CN104330675B (en) | Multivariate time series based power transformation equipment online monitoring and analysis system and method thereof | |
| CN110376500A (en) | Transient temperature rise On-line Measuring Method in a kind of power MOS (Metal Oxide Semiconductor) device opening process | |
| CN103344897A (en) | Non-destructive power MOS tube single-event burnout effect detecting circuit and non-destructive power MOS tube single-event burnout effect detecting method | |
| CN109507487A (en) | Thyristor triggering impulse signal deteching circuit | |
| CN103512922A (en) | Electrical fire detection system and method based on electronic nose system | |
| CN109917264A (en) | A kind of converter valve thyristor level short-circuit test device and method | |
| CN105954695A (en) | Synchronization-based homogeneous-sensor mutation parameter recognizing method and device | |
| CN108444942A (en) | The fault detection method of terahertz light spectrometer | |
| CN107271789A (en) | A kind of digital grounding resistance tester | |
| CN108489933A (en) | The remote control and regulation device of portable terahertz light spectrometer | |
| CN104502115A (en) | High precision detector | |
| CN105807176A (en) | Laboratory simulation test device and method of electrical equipment online detection device | |
| CN206331127U (en) | The node type seismic prospecting instrument of wave detector state is monitored in real time | |
| CN108444941A (en) | The temperature monitoring method of terahertz light spectrometer | |
| CN108489913A (en) | The remote automatic maintenance method of tera-hertz spectra analyzer | |
| CN108333136A (en) | The working condition remote detecting method of Terahertz detector | |
| CN104865508A (en) | Partial discharge recognition method based on data grouping quantification | |
| CN108426853A (en) | The monitoring system of portable Terahertz detector | |
| CN108444937A (en) | The commissioning device of highly sensitive Terahertz detector | |
| CN108362660A (en) | Terahertz detector TT＆C system | |
| CN218546915U (en) | Anti-interference detection system for partial discharge vibration signal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180824 |