CN108333136A - The working condition remote detecting method of Terahertz detector - Google Patents

The working condition remote detecting method of Terahertz detector Download PDF

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Publication number
CN108333136A
CN108333136A CN201810240631.9A CN201810240631A CN108333136A CN 108333136 A CN108333136 A CN 108333136A CN 201810240631 A CN201810240631 A CN 201810240631A CN 108333136 A CN108333136 A CN 108333136A
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transistor
resistance
capacitance
collector
long
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周俊
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SICHUAN LEADER TECHNOLOGY Co Ltd
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SICHUAN LEADER TECHNOLOGY Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G01N21/3586Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Amplifiers (AREA)

Abstract

The present invention provides a kind of working condition remote detecting methods of Terahertz detector, are detected for the failure to long-range terahertz light spectrometer signal processing circuit, and the signal processing circuit includes amplifying circuit, the method includes:(10) detection instruction is sent to long-range terahertz light spectrometer;(20) data volume for the long-range terahertz light spectrometer transmission that monitoring receives, the fault type of long-range terahertz light spectrometer is determined according to the data volume;(30) operating state data acquisition is carried out based on determining failure.The working condition remote detecting method of the Terahertz detector of the present invention can be within a short period of time, judge to belong to native instructions system problem or peripheral signal processing system problem when terahertz light spectrometer failure in a manner of simple, accurate, reliable basis is provided convenient for searching and solving in time failure for Field Force.

Description

The working condition remote detecting method of Terahertz detector
Technical field
The invention belongs to terahertz light spectrometer technical fields, and in particular to a kind of Terahertz using spectral analysis technique is examined Survey the working condition remote detecting method of instrument.
Background technology
The application of terahertz light spectrometer is increasingly extensive.When for remotely being safeguarded using terahertz light spectrometer, producer is past Toward that can not judge which kind of failure belonged to by the monitoring of short time, because of not only spectrum analysis dependent instruction and component There may be failures for execution, and the links such as enhanced processing after detecting spectroscopic data may also break down.Analysis event The model of barrier is therefore all complex, when analyzing soil property ingredient using spectral analysis technique, the performance of tera-hertz spectra instrument There is certain influence for prediction effect, and different prediction model method for building up has also been embodied during prediction and extremely weighed The effect wanted.Even if using the spectral instrument of same model sometimes, the method that prediction model is established is different, obtained detection effect Fruit is also different, wherein mainly using the methods of principle component regression, offset minimum binary and artificial neural network.Also have very much Scholar compares a variety of data processing methods, as a result shows that each method has the characteristics that itself, but specifically used Which kind of data processing method carries out the testing result that modeling can most be had, and one is not obtained in current achievement in research Exact conclusion.The time cost that this complexity analysis method is brought causes bad experience to user.
Invention content
In view of the above analysis, make to shorten failure detection time and carry out proper temperature acquisition based on troubleshooting scenario Industry, the main purpose of the present invention is to provide a kind of working condition remote detecting methods of Terahertz detector, for long-range The failure of terahertz light spectrometer signal processing circuit is detected, and the signal processing circuit includes amplifying circuit, the method Including:
(10) detection instruction is sent to long-range terahertz light spectrometer;
(20) data volume for the long-range terahertz light spectrometer transmission that monitoring receives, determines remotely too according to the data volume The fault type of hertz spectrometer;
(30) operating state data acquisition is carried out based on determining failure.
Further, the step (10) includes:
(101) instruction of the first kind is sent to long-range terahertz light spectrometer, the instruction of the first kind is remotely too Expected time on hertz spectrometer is less than at the first time;
(102) interval is at least after first time, sends the instruction of Second Type to long-range terahertz light spectrometer, and described second Expected time of the instruction of type on long-range terahertz light spectrometer was less than for the second time, and second time is less than first Time;
(103) after being spaced at least the second time, the instruction of the first kind is sent again to long-range terahertz light spectrometer.
Further, it if the data volume for receiving long-range terahertz light spectrometer after experience first time is A bytes, then undergoes The data volume that long-range terahertz light spectrometer is received after second time is B byte, then is received after undergoing first time long-range The data volume of terahertz light spectrometer is C bytes;Then the step (20) includes:
When (A+C)/(A+2B+C) is less than the first predetermined threshold value, long-range terahertz light spectrometer signal processing electricity at this time is determined Road fault-free;
When (A+B)/(B+C) is less than the second predetermined threshold value and (A+C)/(A+2B+C) is more than the first predetermined threshold value, determine Long-range terahertz light spectrometer signal processing circuit possible breakdown at this time starts third type instruction to long-range terahertz light spectrometer;
The data after third type instruction is analyzed on long-range terahertz light spectrometer are received, with preset failure parameter reference values It is compared, the long-range terahertz light spectrometer presence signal handling failure is determined when more than preset failure parameter reference values.
Further, the first kind instruction is that spectrum analysis instructs, and the third type instruction is to be put by described Big circuit carries out the instruction of signal amplification, and when the amplifying circuit is to obtain compared with preset failure parameter reference values The amplifying circuit used.
Further, the Second Type instruction is inquiry operating state instruction, return current time instructs, it is current to return One of GPS position information instruction.
Further, the amplifying circuit includes:The first capacitance C1 including number consecutively --- the 14th capacitance C14 is total The first resistor R1 of 14 capacitances, number consecutively --- the 25th resistance R25 totally 25 resistance, number consecutively the one or two pole Pipe D1 --- third diode D3 totally 3 diodes, number consecutively the first transistor T1 --- the 14th transistor T14 totally 14 A transistor, addition and subtraction circuit, signal input part Vin, signal output end Vout, power end Vs and ground terminal, described 14 resistance R14 are resistance value adjustable resistance, and the resistance value of remaining 24 resistance fixes, wherein the first end connection of the first capacitance C1 the The first end of four resistance R4, the first end of the second end connection power supply Vs and the 5th resistance R5 of the 4th resistance R4, the first capacitance The second end of C1 is grounded;The first end of 4th resistance R4 be also connected with the anode of the first diode D1, first resistor R1 One end, the first end of second resistance R2, the first end of the second capacitance C2, the first end of 3rd resistor R3, the first diode D1's Cathode connects the anode of the second diode D2, and the cathode connection of the second diode D2 passes through the 6th resistance R6 ground connection, first resistor The emitter of the second end connection the first transistor T1 of R1, the base stage of the first transistor T1 connect the cathode of the second diode D2, The collector of the first transistor T1 connects the first end of the 7th resistance R7, and the second end of the 7th resistance R7 is separately connected the 12nd electricity The first end of R12 and the first end of thirteenth resistor R13 are hindered, the second end connection third diode D3 of second resistance R2 is just The cathode of pole, third diode D3 is separately connected the first end of third capacitance C3, the first end of the 8th resistance R8 and the second crystalline substance The base stage of body pipe T2, the second end ground connection of the second capacitance C2;The transmitting of the second end connection second transistor T2 of 3rd resistor R3 The collector of pole, second transistor T2 is separately connected the first end, the first end of the 5th capacitance C5, the 4th crystal of the 4th capacitance C4 The collector of pipe T4, the 9th resistance R9 first end by the first end of the tenth resistance R10 connection eleventh resistors R11, the tenth The first end of one resistance R11 is also connected with the collector of third transistor T3, the collector of the 5th transistor T5, the 6th capacitance C6 The first end of first end, the 7th capacitance C7, the emitter of the second end connection third transistor T3 of the 5th resistance R5, third crystal The base stage of pipe T3 is separately connected the base stage of the 4th transistor T4 and the base stage of the 8th transistor T8, the base stage of the 5th transistor T5 Between the second end and the 14th resistance R14 that connect eleventh resistor R11, the emitter of the 5th transistor T5 is separately connected the 6th The sliding of the collector, the 14th resistance R14 of the second end of capacitance C6, the second end of the 7th capacitance C7 and the 8th transistor T8 Contact is connected to the second end of eleventh resistor R11, and the second end of the 9th resistance R9 connects the base stage and the of the 4th transistor T4 The collector of seven transistor T7, the emitter of the 4th transistor T4 are separately connected the second end of the 4th capacitance C4, the 5th capacitance C5 Second end, the base stage of the 7th transistor T7 and the collector of the tenth two-transistor T12, third capacitance C3 second end connection The collector of the second end of 8th resistance R8 and the emitter and the 7th transistor T7 of the 6th transistor T6, second resistance R2's Second end connects the anode of third diode D3, and the cathode of third diode D3 connects the first end of the 8th resistance R8;14th The second end of resistance R14 is separately connected the first end of the 19th resistance R19 and the first end of the 20th resistance R20, and the 12nd The second end of resistance R12 is separately connected the base stage of the emitter and the 6th transistor T6 of the 9th transistor T9, thirteenth resistor R13 Second end be separately connected the emitter of the tenth transistor T10, the collector of the 7th transistor T7, signal input part Vin and The first end of 15th resistance R15;The second end of 15th resistance R15 is separately connected the first end of the 9th capacitance C9, the 20th The first end of one resistance R21 and the base stage of the 9th transistor T9, the second end of the 9th capacitance C9 and the 21st resistance R21's Second end is grounded;The collector of 6th transistor T6 is separately connected the second end and the 11st transistor T11 of the tenth capacitance C10 Collector;The collector of tenth two-transistor T12 is separately connected the second end of the 17th resistance R17, the 22nd resistance R22 First end and the 14th transistor T14 collector;The emitter and the tenth two-transistor T12 of 11st transistor T11 Emitter be all connected with the first end of the 25th resistance R25, the second end of the 25th resistance R25 passes through the 14th capacitance C14 is grounded, and the second end of the 25th resistance R25 is also connected with the second end of the 23rd resistance R23, the 24th resistance R24 Second end and the 13rd capacitance C13 first end, the 13rd capacitance C13 second end ground connection, the collection of the 9th transistor T9 Electrode is separately connected the base stage of the tenth two-transistor T12 and the first end of the 23rd resistance R23, the tenth transistor T10's Collector connects the first end of the 24th resistance R24;The base stage of 7th transistor T7 is separately connected the of the 16th resistance R16 The first end of one end and the 8th capacitance C8, the second end of the 16th resistance R16 and the second end of the 8th capacitance C8 connect respectively Connect the base stage of the tenth transistor T10;The emitter of 7th transistor T7 is separately connected the 22nd electricity by the 17th resistance R17 The first end of R22 and the first end of the 11st capacitance C11 are hindered, the base stage of the tenth two-transistor T12 connects the 11st capacitance C11 Second end, the base stage of the 7th transistor T7 is separately connected the base of the base stage and the 13rd transistor T13 of the 14th transistor T14 Pole, the collector of the 14th transistor T14 connect the collector of the tenth two-transistor T12, the emitter of the 14th transistor T14 It is separately connected the emitter of the 13rd transistor T13 and the positive input terminal of the addition and subtraction circuit, the 13rd transistor T13 Collector connect the second end of the 19th resistance R19, the second end of the 22nd resistance R22 is separately connected the 20th resistance The second end of the first end of the second end of R20 and the 12nd capacitance C12, the 12nd capacitance C12 is separately connected the 8th transistor The output end connection signal of the negative input end of the emitter of T8 and the addition and subtraction circuit, the addition and subtraction circuit is defeated Outlet;The second end of thirteenth resistor R13 is also connected with the collector of the 6th transistor T6.
Technical scheme of the present invention has the following advantages:
The working condition remote detecting method of the Terahertz detector of the present invention can within a short period of time, with simple, accurate True mode judges to belong to native instructions system problem or peripheral signal processing system problem when terahertz light spectrometer failure, just Reliable basis is provided in searching and solving in time failure for Field Force;It is former with amplification that the amplifying circuit is based on asymmetric feedback Reason can be directed to the adaptive feedback of different terahertz light spectrometers progress and amplification adjustment, compared to existing amplifying circuit in drift Aspect reduces at least 45%, is very suitable for as the reference enhanced processing during malfunction test, can be for spectrometer Operating ambient temperature, humidity detection bring high reliability.
Description of the drawings
Fig. 1 shows the flow chart of this method.
Fig. 2 shows the circuit diagrams of amplifying circuit according to the present invention.
Specific implementation mode
As shown in Figure 1, the working condition remote detecting method of the Terahertz detector of the present invention, for long-range Terahertz The failure of spectrometer signal processing circuit is detected, and the signal processing circuit includes amplifying circuit, the method includes:
(10) detection instruction is sent to long-range terahertz light spectrometer;
(20) data volume for the long-range terahertz light spectrometer transmission that monitoring receives, determines remotely too according to the data volume The fault type of hertz spectrometer;
(30) operating state data acquisition is carried out based on determining failure.According to a preferred embodiment of the invention, work as failure For amplifying circuit failure when, by the amplifying circuit replace terahertz light spectrometer itself signal amplification circuit to collecting Operating ambient temperature, humidity data be amplified, otherwise stop the monitoring to terahertz light spectrometer temperature, humidity etc. and send out Warning information is to field maintenance person.
Preferably, the step (10) includes:
(101) instruction of the first kind is sent to long-range terahertz light spectrometer, the instruction of the first kind is remotely too Expected time on hertz spectrometer is less than at the first time;
(102) interval is at least after first time, sends the instruction of Second Type to long-range terahertz light spectrometer, and described second Expected time of the instruction of type on long-range terahertz light spectrometer was less than for the second time, and second time is less than first Time;
(103) after being spaced at least the second time, the instruction of the first kind is sent again to long-range terahertz light spectrometer.
Preferably, if the data volume for receiving long-range terahertz light spectrometer after experience first time is A bytes, then the is undergone The data volume that long-range terahertz light spectrometer is received after two times is B byte, then received after undergoing first time it is long-range too The data volume of hertz spectrometer is C bytes;Then the step (20) includes:
When (A+C)/(A+2B+C) is less than the first predetermined threshold value, long-range terahertz light spectrometer signal processing electricity at this time is determined Road fault-free;
When (A+B)/(B+C) is less than the second predetermined threshold value and (A+C)/(A+2B+C) is more than the first predetermined threshold value, determine Long-range terahertz light spectrometer signal processing circuit possible breakdown at this time starts third type instruction to long-range terahertz light spectrometer;
The data after third type instruction is analyzed on long-range terahertz light spectrometer are received, with preset failure parameter reference values It is compared, the long-range terahertz light spectrometer presence signal handling failure is determined when more than preset failure parameter reference values.
Preferably, the first kind instruction is that spectrum analysis instructs, and the third type instruction is to pass through the amplification Circuit carries out the instruction of signal amplification, and the amplifying circuit is to make when obtaining compared with preset failure parameter reference values Amplifying circuit.
Preferably, the Second Type instruction is inquiry operating state instruction, return current time instructs, it is current to return One of GPS position information instruction.
Preferably, as shown in Fig. 2, the amplifying circuit includes:The first capacitance C1 including number consecutively --- the 14th Capacitance C14 totally 14 capacitances, number consecutively first resistor R1 --- the 25th resistance R25 totally 25 resistance, number consecutivelies The first diode D1 --- third diode D3 totally 3 diodes, number consecutively the first transistor T1 --- the 14th is brilliant Body pipe T14 14 transistors, addition and subtraction circuit, signal input part Vin, signal output end Vout, power end Vs and connects totally Ground terminal, the 14th resistance R14 are resistance value adjustable resistance, and the resistance value of remaining 24 resistance is fixed, wherein the first capacitance C1 First end connects the first end of the 4th resistance R4, and the second end of the 4th resistance R4 connects the first of power supply Vs and the 5th resistance R5 End, the second end ground connection of the first capacitance C1;The first end of 4th resistance R4 is also connected with the anode of the first diode D1, first The first end of resistance R1, the first end of second resistance R2, the first end of the second capacitance C2, the first end of 3rd resistor R3, first The cathode of diode D1 connects the anode of the second diode D2, and the cathode connection of the second diode D2 is connect by the 6th resistance R6 Ground, the emitter of the second end connection the first transistor T1 of first resistor R1, the base stage of the first transistor T1 connect the two or two pole The cathode of pipe D2, the collector of the first transistor T1 connect the first end of the 7th resistance R7, the second end difference of the 7th resistance R7 The first end of twelfth resistor R12 and the first end of thirteenth resistor R13 are connected, the second end of second resistance R2 connects third The anode of diode D3, the cathode of third diode D3 be separately connected the first end of third capacitance C3, the 8th resistance R8 first The base stage of end and second transistor T2, the second end ground connection of the second capacitance C2;The second end connection second of 3rd resistor R3 is brilliant The emitter of body pipe T2, the collector of second transistor T2 be separately connected the first end of the 4th capacitance C4, the 5th capacitance C5 One end, the collector of the 4th transistor T4, the 9th resistance R9 first end pass through the tenth resistance R10 connection eleventh resistors R11 First end, the first end of eleventh resistor R11 is also connected with the current collection of the collector of third transistor T3, the 5th transistor T5 Pole, the first end of the 6th capacitance C6, the first end of the 7th capacitance C7, the second end connection third transistor T3's of the 5th resistance R5 The base stage of emitter, third transistor T3 is separately connected the base stage of the 4th transistor T4 and the base stage of the 8th transistor T8, Between the second end and the 14th resistance R14 of the base stage connection eleventh resistor R11 of five transistor T5, the hair of the 5th transistor T5 Emitter-base bandgap grading is separately connected the second end of the 6th capacitance C6, the collector of the second end of the 7th capacitance C7 and the 8th transistor T8, The slider of 14 resistance R14 is connected to the second end of eleventh resistor R11, and the second end connection the 4th of the 9th resistance R9 is brilliant The collector of the base stage and the 7th transistor T7 of body pipe T4, the emitter of the 4th transistor T4 are separately connected the of the 4th capacitance C4 Two ends, the second end of the 5th capacitance C5, the base stage of the 7th transistor T7 and the collector of the tenth two-transistor T12, third electricity The second end for holding C3 connects the collection of the second end of the 8th resistance R8 and the emitter and the 7th transistor T7 of the 6th transistor T6 Electrode, the anode of the second end connection third diode D3 of second resistance R2, the cathode of third diode D3 connect the 8th resistance The first end of R8;The second end of 14th resistance R14 is separately connected the first end and the 20th resistance of the 19th resistance R19 The first end of R20, the second end of twelfth resistor R12 are separately connected the emitter and the 6th transistor T6 of the 9th transistor T9 Base stage, the second end of thirteenth resistor R13 be separately connected the emitter of the tenth transistor T10, the 7th transistor T7 collector, The first end of signal input part Vin and the 15th resistance R15;The second end of 15th resistance R15 is separately connected the 9th capacitance The base stage of the first end of C9, the first end of the 21st resistance R21 and the 9th transistor T9, the second end of the 9th capacitance C9 and The second end of 21st resistance R21 is grounded;The collector of 6th transistor T6 is separately connected the second end of the tenth capacitance C10 With the collector of the 11st transistor T11;The collector of tenth two-transistor T12 is separately connected the second of the 17th resistance R17 It holds, the collector of the first end of the 22nd resistance R22 and the 14th transistor T14;The emitter of 11st transistor T11 It is all connected with the first end of the 25th resistance R25 with the emitter of the tenth two-transistor T12, the second of the 25th resistance R25 End by the 14th capacitance C14 ground connection, the second end of the 25th resistance R25 be also connected with the second end of the 23rd resistance R23, The second end of 24th resistance R24 and the first end of the 13rd capacitance C13, the second end ground connection of the 13rd capacitance C13, the The collector of nine transistor T9 is separately connected the base stage of the tenth two-transistor T12 and the first end of the 23rd resistance R23, the The collector of ten transistor T10 connects the first end of the 24th resistance R24;The base stage of 7th transistor T7 is separately connected the tenth The first end of six resistance R16 and the first end of the 8th capacitance C8, the second end of the 16th resistance R16 and the 8th capacitance C8's Second end is separately connected the base stage of the tenth transistor T10;The emitter of 7th transistor T7 is connected respectively by the 17th resistance R17 Connect the first end of the 22nd resistance R22 and the first end of the 11st capacitance C11, the base stage connection of the tenth two-transistor T12 The base stage of the second end of 11st capacitance C11, the 7th transistor T7 is separately connected the base stage and the 13rd of the 14th transistor T14 The base stage of transistor T13, the collector of the 14th transistor T14 connect the collector of the tenth two-transistor T12, the 14th crystal The emitter of pipe T14 is separately connected the emitter of the 13rd transistor T13 and the positive input terminal of the addition and subtraction circuit, The collector of 13 transistor T13 connects the second end of the 19th resistance R19, and the second end of the 22nd resistance R22 connects respectively The second end of the 20th resistance R20 and the first end of the 12nd capacitance C12 are connect, the second end of the 12nd capacitance C12 connects respectively The negative input end of the emitter and the addition and subtraction circuit of the 8th transistor T8 is connect, the output end of the addition and subtraction circuit connects Connect the signal output end;The second end of thirteenth resistor R13 is also connected with the collector of the 6th transistor T6.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.

Claims (6)

1. a kind of working condition remote detecting method of Terahertz detector, for long-range terahertz light spectrometer signal processing electricity The failure on road is detected, and the signal processing circuit includes amplifying circuit, the method includes:
(10) detection instruction is sent to long-range terahertz light spectrometer;
(20) data volume for the long-range terahertz light spectrometer transmission that monitoring receives, long-range Terahertz is determined according to the data volume The fault type of spectrometer;
(30) operating state data acquisition is carried out based on determining failure.
2. the working condition remote detecting method of Terahertz detector as claimed in claim 1, which is characterized in that
The step (10) includes:
(101) instruction of the first kind is sent to long-range terahertz light spectrometer, and the instruction of the first kind is in long-range Terahertz Expected time on spectrometer is less than at the first time;
(102) after at least first time of interval, the instruction of Second Type is sent to long-range terahertz light spectrometer, the Second Type Expected time of the instruction on long-range terahertz light spectrometer be less than for the second time, when second time is less than first Between;
(103) after being spaced at least the second time, the instruction of the first kind is sent again to long-range terahertz light spectrometer.
3. the working condition remote detecting method of Terahertz detector as claimed in claim 2, which is characterized in that when setting experience first Between after to receive the data volume of long-range terahertz light spectrometer be A bytes, then long-range terahertz light is received after undergoing for the second time The data volume of spectrometer is B byte, then the data volume of the long-range terahertz light spectrometer received after undergoing first time is C bytes; Then the step (20) includes:
When (A+C)/(A+2B+C) is less than the first predetermined threshold value, determine long-range at this time terahertz light spectrometer signal processing circuit without Failure;
When (A+B)/(B+C) is less than the second predetermined threshold value and (A+C)/(A+2B+C) is more than the first predetermined threshold value, determine at this time Long-range terahertz light spectrometer signal processing circuit possible breakdown starts third type instruction to long-range terahertz light spectrometer;
The data after third type instruction is analyzed on long-range terahertz light spectrometer are received, are carried out with preset failure parameter reference values Compare, the long-range terahertz light spectrometer presence signal handling failure is determined when more than preset failure parameter reference values.
4. the working condition remote detecting method of Terahertz detector as claimed in claim 3, which is characterized in that the first kind Instruction is that spectrum analysis instructs, and the third type instruction is by the instruction of amplifying circuit progress signal amplification, and institute State amplifying circuit and be the amplifying circuit in order to be used when obtaining compared with preset failure parameter reference values.
5. the working condition remote detecting method of Terahertz detector as claimed in claim 3, which is characterized in that the Second Type Instruction is one of to inquire operating state instruction, return to current time instruction, return to current GPS location information command.
6. the working condition remote detecting method of Terahertz detector as claimed in claim 3, which is characterized in that the amplifying circuit Including:The first capacitance C1 including number consecutively --- the 14th capacitance C14 totally 14 capacitances, number consecutively first resistor R1 --- the 25th resistance R25 totally 25 resistance, number consecutively the first diode D1 --- third diode D3 totally 3 two The first transistor T1 of pole pipe, number consecutively --- the 14th transistor T14 totally 14 transistors, addition and subtraction circuits, signals Input terminal Vin, signal output end Vout, power end Vs and ground terminal, the 14th resistance R14 are resistance value adjustable resistance, The resistance value of remaining 24 resistance is fixed, wherein the first end of the first capacitance C1 connects the first end of the 4th resistance R4, the 4th resistance The first end of the second end connection power supply Vs and the 5th resistance R5 of R4, the second end ground connection of the first capacitance C1;4th resistance R4 The first end be also connected with the anode of the first diode D1, the first end of first resistor R1, the first end of second resistance R2, The first end of two capacitance C2, the first end of 3rd resistor R3, the cathode of the first diode D1 connect the anode of the second diode D2, The cathode connection of second diode D2 connects the first transistor T1's by the 6th resistance R6 ground connection, the second end of first resistor R1 Emitter, the base stage of the first transistor T1 connect the cathode of the second diode D2, the collector connection the 7th of the first transistor T1 The second end of the first end of resistance R7, the 7th resistance R7 is separately connected the first end and thirteenth resistor of twelfth resistor R12 The first end of R13, the anode of the second end connection third diode D3 of second resistance R2, the cathode of third diode D3 connect respectively Connect the first end, the first end of the 8th resistance R8 and the base stage of second transistor T2 of third capacitance C3, the of the second capacitance C2 Two ends are grounded;The emitter of the second end connection second transistor T2 of 3rd resistor R3, the collector difference of second transistor T2 Connect the first end of the 4th capacitance C4, the first end of the 5th capacitance C5, the collector of the 4th transistor T4, the 9th resistance R9 One end is also connected with third by the first end of the tenth resistance R10 connection eleventh resistors R11, the first end of eleventh resistor R11 The collector of transistor T3, the collector of the 5th transistor T5, the first end of the 6th capacitance C6, the first end of the 7th capacitance C7, The emitter of the second end connection third transistor T3 of 5th resistance R5, the base stage of third transistor T3 are separately connected the 4th crystal The second end of the base stage of pipe T4 and the base stage of the 8th transistor T8, the base stage of the 5th transistor T5 connection eleventh resistor R11 Between the 14th resistance R14, the emitter of the 5th transistor T5 is separately connected the second end of the 6th capacitance C6, the 7th capacitance C7 Second end and the slider of the collector of the 8th transistor T8, the 14th resistance R14 be connected to eleventh resistor R11's Second end, the second end of the 9th resistance R9 connect the collector of the base stage and the 7th transistor T7 of the 4th transistor T4, and the 4th is brilliant The emitter of body pipe T4 is separately connected the base of the second end of the 4th capacitance C4, the second end of the 5th capacitance C5, the 7th transistor T7 The collector of pole and the tenth two-transistor T12, the second end of third capacitance C3 connect the second end and the of the 8th resistance R8 The collector of the emitter and the 7th transistor T7 of six transistor T6, the second end connection third diode D3's of second resistance R2 Anode, the cathode of third diode D3 connect the first end of the 8th resistance R8;The second end of 14th resistance R14 is separately connected The second end of the first end of 19 resistance R19 and the first end of the 20th resistance R20, twelfth resistor R12 is separately connected The second end of the base stage of the emitter and the 6th transistor T6 of nine transistor T9, thirteenth resistor R13 is separately connected the tenth crystal The first end of the emitter of pipe T10, the collector of the 7th transistor T7, signal input part Vin and the 15th resistance R15;The The second end of 15 resistance R15 is separately connected the first end of the 9th capacitance C9, the first end and the 9th of the 21st resistance R21 The base stage of transistor T9, the second end of the 9th capacitance C9 and the second end of the 21st resistance R21 are grounded;6th transistor T6 Collector be separately connected the tenth capacitance C10 second end and the 11st transistor T11 collector;Tenth two-transistor T12 Collector be separately connected the second end of the 17th resistance R17, the first end and the 14th transistor of the 22nd resistance R22 The collector of T14;The emitter of 11st transistor T11 and the emitter of the tenth two-transistor T12 are all connected with the 25th electricity The first end of R25 is hindered, the second end of the 25th resistance R25 is grounded by the 14th capacitance C14, the 25th resistance R25's Second end is also connected with the second end of the 23rd resistance R23, the second end and the 13rd capacitance C13 of the 24th resistance R24 First end, the second end ground connection of the 13rd capacitance C13, the collector of the 9th transistor T9 is separately connected the tenth two-transistor The collector of the first end of the base stage of T12 and the 23rd resistance R23, the tenth transistor T10 connects the 24th resistance R24 First end;The base stage of 7th transistor T7 be separately connected the 16th resistance R16 first end and the 8th capacitance C8 first End, the second end of the 16th resistance R16 and the second end of the 8th capacitance C8 are separately connected the base stage of the tenth transistor T10;The The emitter of seven transistor T7 is separately connected the first end and the 11st of the 22nd resistance R22 by the 17th resistance R17 The first end of capacitance C11, the base stage of the tenth two-transistor T12 connect the second end of the 11st capacitance C11, the 7th transistor T7's Base stage is separately connected the base stage of the base stage and the 13rd transistor T13 of the 14th transistor T14, the collection of the 14th transistor T14 Electrode connects the collector of the tenth two-transistor T12, and the emitter of the 14th transistor T14 is separately connected the 13rd transistor The 19th electricity of collector connection of the positive input terminal of the emitter of T13 and the addition and subtraction circuit, the 13rd transistor T13 The second end of R19 is hindered, the second end of the 22nd resistance R22 is separately connected the second end and the 12nd of the 20th resistance R20 The second end of the first end of capacitance C12, the 12nd capacitance C12 is separately connected the emitter and plus-minus fortune of the 8th transistor T8 The negative input end of circuit is calculated, the output end of the addition and subtraction circuit connects the signal output end;The of thirteenth resistor R13 Two ends are also connected with the collector of the 6th transistor T6.
CN201810240631.9A 2018-03-22 2018-03-22 The working condition remote detecting method of Terahertz detector Pending CN108333136A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104866632A (en) * 2015-04-30 2015-08-26 广东美的制冷设备有限公司 Failure data acquisition method, device and terminal of electric household appliance
CN106452922A (en) * 2016-11-30 2017-02-22 长春工业大学 Data center processing method applied to Internet of things
CN107491375A (en) * 2017-08-18 2017-12-19 国网山东省电力公司信息通信公司 Equipment detection and fault early warning system and method under a kind of cloud computing environment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104866632A (en) * 2015-04-30 2015-08-26 广东美的制冷设备有限公司 Failure data acquisition method, device and terminal of electric household appliance
CN106452922A (en) * 2016-11-30 2017-02-22 长春工业大学 Data center processing method applied to Internet of things
CN107491375A (en) * 2017-08-18 2017-12-19 国网山东省电力公司信息通信公司 Equipment detection and fault early warning system and method under a kind of cloud computing environment

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Application publication date: 20180727