CN108428760B - Efficient photovoltaic solder strip and manufacturing method thereof - Google Patents
Efficient photovoltaic solder strip and manufacturing method thereof Download PDFInfo
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- CN108428760B CN108428760B CN201810254457.3A CN201810254457A CN108428760B CN 108428760 B CN108428760 B CN 108428760B CN 201810254457 A CN201810254457 A CN 201810254457A CN 108428760 B CN108428760 B CN 108428760B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910000679 solder Inorganic materials 0.000 title claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 136
- 229910052802 copper Inorganic materials 0.000 claims abstract description 127
- 239000010949 copper Substances 0.000 claims abstract description 127
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 78
- 238000003466 welding Methods 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000000576 coating method Methods 0.000 claims abstract description 69
- 239000011248 coating agent Substances 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 49
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 23
- 239000000956 alloy Substances 0.000 claims abstract description 23
- 238000007747 plating Methods 0.000 claims description 18
- 230000000694 effects Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 8
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims description 4
- 238000003490 calendering Methods 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 230000002500 effect on skin Effects 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a high-efficiency photovoltaic welding strip and a manufacturing method thereof, wherein the high-efficiency photovoltaic welding strip comprises a copper base material and an alloy tin coating, the copper base material is formed by sequentially connecting a plurality of copper base material basic units end to end, and a mark point is formed between every two adjacent copper base material basic units; the copper substrate basic unit comprises a copper substrate reflecting section and a copper substrate backlight section which are integrally arranged, wherein a sawtooth-shaped groove with an isosceles trapezoid-shaped cross section is formed in the upper surface of the copper substrate reflecting section, an arc-shaped groove is formed in the lower surface of the copper substrate reflecting section, and a sawtooth-shaped groove II is formed in the upper surface of the copper substrate backlight section; the alloy tin coating comprises a reflective surface tin coating, a lower welding surface tin coating and an upper welding surface tin coating. According to the invention, the upper surface of the copper base material is set to be in an isosceles trapezoid structure, and then the reflecting surface tin coating is coated on the sawtooth-shaped grooves in the reflecting section of the copper base material, so that the reflecting surface tin coating can form an ideal isosceles triangle structure when being coated.
Description
Technical Field
The invention relates to the technical field of solar cell module processing, in particular to a high-efficiency photovoltaic solder strip and a manufacturing method thereof.
Background
Solar photovoltaic power generation is a technology for directly converting light energy into electric energy by utilizing the photovoltaic effect of sunlight irradiating on a semiconductor interface. At present, in a conventional photovoltaic module, different battery pieces are required to be connected in series by using a welding strip, one end of the welding strip is welded on the front surface of a battery, the other end of the welding strip is welded on the back surface of another battery, the welding strip is packaged into the photovoltaic module, electric energy generated by the photovoltaic battery is led out to a bus bar, and then the electric energy is sent to a user terminal through a processing circuit, so that the purpose of outputting module power is achieved.
The common photovoltaic welding strip does not have a reflection effect, light irradiated on the common photovoltaic welding strip is wasted, the reflection photovoltaic welding strip has a reflection function, light irradiated on the reflection photovoltaic welding strip is totally reflected to the power generation unit, and the output of power generation power is reduced.
The existing reflective solder strip is mainly structured by rolling a thin silver layer on the upper surface (light receiving surface) of a copper core and rolling a tin-lead layer on the lower surface (non-light receiving surface) of the copper core based on the copper core, wherein the silver layer has a special reflective texture, and then cutting the silver layer into a required solder strip size, although the output power of the assembly can be improved, the solder strip has the following defects: 1) the cost is high, and the cost is several times of that of the conventional solder strip due to the adoption of a large amount of noble metal silver; 2) new welding or other joining processes need to be developed, which is high in cost; 3) the existing welding process of the solar module production line cannot weld the silver layer on the copper core to the back of the cell, and needs to be connected through other processes, so that the process is complex and the cost is high; 4) because the left side and the right side of the copper core are not protected by the coating after cutting, the copper core is directly contacted with EVA in the component, and the failure probability of the component in daily use is increased; 5) the reflecting structure is unreasonable, the reflecting coating composition is not appropriate, the reflecting effect of the reflecting welding strip is not ideal, total reflection cannot be formed, and the reflecting structure cannot easily meet the design requirement in the production process of the reflecting welding strip.
Disclosure of Invention
The invention provides a high-efficiency photovoltaic welding strip and a manufacturing method thereof, aiming at solving the problems that the common photovoltaic welding strip does not have a reflecting effect so as to reduce the output of generated power, and the existing reflecting welding strip is expensive and has an unreasonable reflecting structure so as to cause the non-ideal reflecting effect, so as to improve the output of generated power.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows.
The high-efficiency photovoltaic welding strip comprises a copper base material and an alloy tin coating layer which is arranged outside the copper base material in a coating mode through a wind knife tin coating system, wherein the copper base material is formed by sequentially connecting a plurality of copper base material basic units end to end, and a mark point for image recognition is formed between every two adjacent copper base material basic units; the copper substrate basic unit comprises a copper substrate reflecting section and a copper substrate backlight section which are integrally arranged, wherein a sawtooth-shaped groove with the cross section in an isosceles trapezoid structure is formed in the upper surface of the copper substrate reflecting section, an arc-shaped groove is formed in the lower surface of the copper substrate reflecting section, and a sawtooth-shaped groove II with the cross section in the same shape as the sawtooth-shaped groove is formed in the upper surface of the copper substrate backlight section; the alloy tin coating comprises a reflecting surface tin coating coated on the outer layer of the zigzag groove, a lower welding surface tin coating coated on the outer layer of the arc groove and used for being in welding connection with a main grid line of a first battery piece placed below the copper base material reflecting section, and an upper welding surface tin coating coated on the upper surface of the copper base material backlight section and used for being in welding connection with a back electrode of a second battery piece placed above the copper base material backlight section.
Further optimizing the technical scheme, the reflective surface tin coating is of an inverted isosceles triangle structure which is uniformly arranged and has better reflective effect.
Further optimizing the technical scheme, the alloy tin plating layer comprises the following components in parts by weight: 60 to 63% of Sn, 78 to 1% of Bi0, 0 to 1% of P, 0 to 1% of GeP0, and 36 to 37% of Pb.
Further optimizing the technical scheme, the alloy tin plating layer comprises the following components in parts by weight: sn 63%, Bi0.02%, P0.03%, P0.02%, GeP 0.001.001%, Pb 36.929%.
Further optimizing the technical scheme, the thickness of the reflective surface tin coating is less than 3 mu m.
Further optimizing the technical scheme, the thickness of the upper welding surface tin coating is 20 microns +/-5 microns.
Further optimizing the technical scheme, the thickness of the lower welding surface tin coating is 15 microns +/-5 microns.
The manufacturing method of the high-efficiency photovoltaic solder strip comprises the following steps of 1) firstly, pressing an anaerobic copper wire with a certain specification to an anaerobic copper strip with a required size through a rolling wheel; 2) the oxygen-free copper strip passes through a die shaping mechanism on a production line to form a plurality of copper substrate basic units, a marking point is formed between every two adjacent copper substrate basic units, the copper substrate basic units are divided into a copper substrate reflecting section and a copper substrate backlight section, a sawtooth-shaped groove and an edge reflecting inclined plane with a set structure are formed on the reflecting surface of the copper substrate reflecting section, an arc-shaped groove is formed on the back surface of the reflecting surface of the copper substrate reflecting section, and a sawtooth-shaped groove II with the same structure as the copper substrate reflecting section is formed on the copper substrate backlight section; 3) after the tin-lead alloy is annealed, cleaned and melted, a reflecting surface tin coating is sequentially formed on the upper surface of the copper base material reflecting section through a precise air knife tin plating device, a lower welding surface tin coating is formed on the lower surface of the copper base material reflecting section, an upper welding surface tin coating is formed on the upper surface of the copper base material backlight section, and a backlight surface is formed on the back surface of the copper base material backlight section which is not coated with tin.
Due to the adoption of the technical scheme, the technical progress of the invention is as follows.
The invention has unique design and strong practicability, and the reflecting surface tin coating can form an ideal isosceles triangle structure when being coated by setting the upper surface of the copper substrate into an isosceles trapezoid structure and coating the reflecting surface tin coating on the zigzag grooves in the reflecting section of the copper substrate, thereby meeting the design requirement, greatly improving the reflecting effect and effectively solving the problem of poor reflecting effect of the photovoltaic welding strip; the arc-shaped groove can form a certain amount of plating alloy in the arc-shaped groove in the production process of the reflective solder strip so as to ensure reliable welding of the photovoltaic solder strip, and meanwhile, the arc-shaped groove structure can effectively increase the current-carrying capacity of the solder strip due to the skin effect, reduce the heat loss of the solder strip during conduction and improve the power output of the assembly; by providing a mark point between two adjacent copper base material basic units, image recognition can be performed.
Drawings
FIG. 1 is a side view of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a cross-sectional view along AA of FIG. 2;
FIG. 4 is a cross-sectional view taken along line BB of FIG. 2;
FIG. 5 is a schematic view of the structure of the copper substrate of the present invention.
Wherein: 1. the copper substrate, 2, the zigzag groove, 3, the arc recess, 4, the reflective surface tin coating, 5, the lower weld surface tin coating, 6, the upper weld surface tin coating, 7, the backlight surface, 8, the mark point, 9, the copper substrate reflective segment, 10, the copper substrate backlight segment, 11, the copper substrate basic unit, 12 and the zigzag groove.
Detailed Description
The present invention will be described in further detail with reference to specific examples.
A high-efficiency photovoltaic solder strip and a manufacturing method thereof are shown in a combined manner in figures 1 to 2 and comprise a copper base material 1 and an alloy tin coating.
The copper substrate 1 is double-zero 3 oxygen-free copper, the conductivity of the copper is high, the copper can reach an ideal angle after being formed by a forming die, the surface of the copper is smooth and burr-free, and the copper substrate can form a smooth reflecting surface after being tinned. The copper base material 1 is formed by sequentially connecting a plurality of copper base material basic units 11 end to end, a marking point 8 is formed between every two adjacent copper base material basic units 11, and the marking point 8 is used for image recognition. The copper substrate basic unit 11 includes a copper substrate light reflecting section 9 and a copper substrate backlight section 10. The upper surface of the copper substrate reflection section 9 is provided with the serrated grooves 2, the cross sections of the serrated grooves 2 are in isosceles trapezoid structures, the isosceles trapezoid reflection structures are beneficial to forming ideal isosceles triangle structures through tin coating in the process of tin coating of the photovoltaic welding strip, if isosceles triangles are directly formed on the copper substrate, the isosceles triangles formed after the production tin coating process of the photovoltaic welding strip cannot reach the designed isosceles triangle angles, the reflection effect is not ideal, and total reflection cannot be formed; the lower surface of the copper substrate reflection section 9 is provided with the arc-shaped groove 3, the arc-shaped groove structure is designed to form a certain amount of plating alloy in the arc-shaped groove to be reserved in the production process of the reflection welding strip, so that the welding of the photovoltaic welding strip is more reliable, and meanwhile, the arc-shaped groove structure can effectively increase the current-carrying capacity of the welding strip due to the skin effect, reduce the heat loss of the welding strip when conducting and improve the power output of the assembly. The surface of the copper substrate backlight section 10 is provided with a second sawtooth-shaped groove 12 which has the same structure as the sawtooth-shaped groove 2 on the copper substrate light reflecting section 9.
The alloy tin plating layer is plated on the surface of the copper base material 1 and is set to be a specific thickness, the alloy of the plating layer is specially processed and has specific components, the components contain metal bismuth in a specific proportion, and the addition of the metal bismuth can increase the brightness of the surface of the welding strip so as to enhance the light reflection effect of the surface of the welding strip; the coating alloy contains phosphorus elements in a specific proportion, and has the function of increasing the fluidity of the coating in a hot melting state, so that a tin layer on the surface of a groove formed in a tinning process of the reflective welding strip is as thin as possible, and a reflective structure at a designed angle is reliably and stably formed in the production process of the reflective welding strip. The tin alloy used in the invention has good fluidity and high brightness, and can form a high-quality reflecting surface.
The alloy tin plating layer comprises the following components in percentage by weight: 60 to 63% of Sn, 0 to 1% of Bi, 0 to 1% of P, GeP0 to 1% of P, and 36 to 37% of Pb. The alloy tin plating layer in the embodiment adopts the components with the weight ratio of Sn 63%, Bi 0.02%, P0.03%, P0.02%, GeP 0.001% and Pb 36.929%. The composition proportion can greatly increase the welding tension of the alloy; the brightness of the alloy coating is increased, and the light reflecting effect is improved; the fluidity of the alloy in a hot melting state is increased, so that the alloy coating on the surface of the welding strip is uniform and smooth, and the light reflecting effect is increased.
The alloy tin coating comprises a reflective surface tin coating 4, a lower welding surface tin coating 5 and an upper welding surface tin coating 6. The reflecting surface tin coating 4 is coated on the outer layer of the sawtooth-shaped groove 2, the thickness is less than 3 mu m, the reflecting surface tin coating is of an inverted isosceles triangle structure which is uniformly arranged, the reflecting angle is reasonably designed, and the reflecting surface tin coating has better reflecting effect on the light energy which is irradiated on the reflecting surface tin coating; the lower welding surface tin coating 5 is coated on the outer layer of the arc-shaped groove 3, has the thickness of 15 microns +/-5 microns, is used for being welded and connected with a main grid line of a first battery piece placed below the copper substrate reflection section 9, and can effectively improve the conductivity of a welding strip; the upper welding surface tin coating 6 is coated on the upper surface of the copper base material backlight section 10, has the thickness of 20 microns +/-5 microns and is used for being in welding connection with a second battery piece back electrode placed above the copper base material backlight section 10.
The cross-sectional view of the copper substrate reflection section 9 is shown in fig. 3, and comprises reflection surface tin-plating layers 4 which are regularly arranged and are less than 3 μm, wherein the reflection surface tin-plating layers 4 are inverted isosceles triangle grooves, a copper substrate is arranged below the reflection surface tin-plating layers 4, and a lower welding surface tin-plating layer with the thickness of 15 μm +/-5 μm is arranged below the copper substrate.
The cross-sectional view of the copper substrate backlight section 10 is shown in fig. 4, and the copper substrate backlight section comprises a copper substrate, a second sawtooth-shaped groove with an isosceles trapezoid structure is arranged above the copper substrate, an upper welding surface tin coating 6 with an arc-shaped upper part is filled above the second sawtooth-shaped groove, and a backlight surface with a concave groove is arranged below the copper substrate.
The copper substrate is formed through a special die, as shown in figure 5, and then the groove reflective surface and the welding surface which are arranged at intervals at a certain length are formed through a special air knife tin coating system, after tin coating, the inverted isosceles trapezoid which is uniformly arranged on the substrate at a certain length is changed into the uniformly arranged groove reflective surface section of the isosceles triangle, the mark point for image recognition and the welding section which is filled with the tin-lead alloy groove for welding. The thickness of the tin layer of each part is controlled by the air knife tin coating system, so that the reflecting groove reaches the designed optimal reflecting angle, the welding surface reaches a good welding effect, and the concave surface reaches the designed radian to improve the conductivity. The substrate copper adopts an oxygen-free copper rod with refined crystal grains, and the wire drawing cooling liquid adopts oil-free wire drawing liquid, so that the surface of the welding strip substrate formed by the die is smooth and burr-free, and the formed welding strip substrate is regular to reach the designed shape. The special coating alloy has good fluidity and high brightness, so that the reflecting groove can reach the designed reflecting inverted triangle structure when tinning, and the reflecting surface is flat, bright and good in reflecting effect.
The angle of the high-efficiency welding strip inverted triangle structure has a total reflection effect, so that sunlight irradiated on the high-efficiency welding strip is effectively reflected to the power generation unit, and the power generation power of the assembly is improved; the concave structure on the back of the welding strip plays a role in skin effect, the conductivity of the welding strip is improved, the conductive loss of the assembly is reduced, and the power output of the assembly is improved.
The invention is produced in the production process, the light reflecting structure is simple to form, and the service life of the forming system is far longer than that of the former calendering and forming mechanism.
The manufacturing method of the high-efficiency photovoltaic solder strip is as follows.
1) Firstly, an oxygen-free copper wire with a certain specification is pressed to an oxygen-free copper belt with a required size through a calendering wheel.
2) The oxygen-free copper strip passes through a die shaping mechanism on a production line to form a plurality of copper substrate basic units 11, a marking point 8 is formed between every two adjacent copper substrate basic units 11, the copper substrate basic units 11 are divided into a copper substrate reflecting section 9 and a copper substrate backlight section 10, a sawtooth-shaped groove 2 and an edge reflecting inclined plane with a set structure are formed on the reflecting surface of the copper substrate reflecting section 9, an arc-shaped groove 3 is formed on the back surface of the reflecting surface of the copper substrate reflecting section 9, and a sawtooth-shaped groove II 12 with the same structure as the copper substrate reflecting section 9 is formed on the copper substrate backlight section 10.
3) After the tin-lead alloy is annealed, cleaned and melted, a reflecting surface tin coating 4 is sequentially formed on the upper surface of the copper base material reflecting section 9 through a precise air knife tin plating device, a lower welding surface tin coating 5 is formed on the lower surface of the copper base material reflecting section 9, an upper welding surface tin coating 6 is formed on the upper surface of the copper base material backlight section 10, and a backlight surface 7 is formed on the back surface of the copper base material backlight section 10 which is not coated with tin; the thickness of the formed reflective surface tin coating 4 is less than 3 μm, the thickness of the upper soldering surface tin coating 6 is 20 μm + -5 μm, and the thickness of the lower soldering surface tin coating 5 is 15 μm + -5 μm.
When the assembly is manufactured, the lower welding surface tin coating is in welding connection with the main grid line of the first battery piece placed below the copper substrate reflection section, the upper welding surface tin coating is in welding connection with the back electrode of the second battery piece placed above the upper welding surface tin coating, and the assembly battery string is manufactured by welding in the above cycle.
Claims (4)
1. The utility model provides a high-efficient photovoltaic solder strip, includes copper substrate (1) and coats the alloy tin coating that sets up outside copper substrate (1) through air knife tin coating system, its characterized in that: the copper base material (1) is formed by sequentially connecting a plurality of copper base material basic units (11) end to end, and a marking point (8) for image identification is formed between every two adjacent copper base material basic units (11); the copper substrate basic unit (11) comprises a copper substrate reflecting section (9) and a copper substrate backlight section (10) which are integrally arranged, wherein a sawtooth-shaped groove (2) with the cross section in an isosceles trapezoid structure is formed in the upper surface of the copper substrate reflecting section (9), an arc-shaped groove (3) is formed in the lower surface of the copper substrate reflecting section (9), and a sawtooth-shaped groove II (12) with the cross section in the same shape as the sawtooth-shaped groove (2) is formed in the upper surface of the copper substrate backlight section (10);
the alloy tin coating comprises a reflecting surface tin coating (4) coated on the outer layer of the zigzag groove (2), a lower welding surface tin coating (5) coated on the outer layer of the arc-shaped groove (3) and used for being welded and connected with a main grid line of a first battery piece placed below the copper base material reflecting section (9), and an upper welding surface tin coating (6) coated on the upper surface of the copper base material backlight section (10) and used for being welded and connected with a back electrode of a second battery piece placed above the copper base material backlight section (10); wherein the reflective surface tin coating (4) is in an inverted isosceles triangle structure which is uniformly arranged and has better reflective effect, and the thickness is less than 3 mu m;
the alloy tin plating layer comprises the following components in parts by weight: 63% of Sn, 0.02% of Bi, 0.03% of P, 0.001% of GeP0 and 36.929% of Pb.
2. A high efficiency photovoltaic solder strip as claimed in claim 1, wherein: the thickness of the upper welding surface tin plating layer (6) is 20 microns +/-5 microns.
3. A high efficiency photovoltaic solder strip as claimed in claim 1, wherein: the thickness of the lower welding surface tin plating layer (5) is 15 mu m +/-5 mu m.
4. A method for manufacturing a high-efficiency photovoltaic solder strip according to any one of claims 1 to 3, wherein the method comprises the following steps:
1) firstly, pressing an anaerobic copper wire with a certain specification to an anaerobic copper strip with a required size through a calendering wheel;
2) the oxygen-free copper strip passes through a die shaping mechanism on a production line to form a plurality of copper base material basic units (11), a marking point (8) is formed between every two adjacent copper base material basic units (11), the copper base material basic units (11) are divided into a copper base material reflecting section (9) and a copper base material backlight section (10), a serrated groove (2) and an edge reflecting inclined plane with a set structure are formed on the reflecting surface of the copper base material reflecting section (9), an arc-shaped groove (3) is formed on the back surface of the reflecting surface of the copper base material reflecting section (9), and a serrated groove II (12) with the same structure as the copper base material reflecting section (9) is formed on the copper base material backlight section (10);
3) after the tin-lead alloy is annealed, cleaned and melted, a reflecting surface tin coating (4) is sequentially formed on the upper surface of the copper base material reflecting section (9) through a precise air knife tin plating device, a lower welding surface tin coating (5) is formed on the lower surface of the copper base material reflecting section (9), an upper welding surface tin coating (6) is formed on the upper surface of the copper base material backlight section (10), and a backlight surface (7) is formed on the back surface of the copper base material backlight section (10) which is not coated with tin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN108987517B (en) * | 2018-09-13 | 2024-04-16 | 常州市北达机械制造有限公司 | Trapezoidal copper-based structure of concentrating tin-coated copper strip |
| CN111223953A (en) * | 2019-11-29 | 2020-06-02 | 英利能源（中国）有限公司 | Reflective welding strip, photovoltaic module and preparation method |
| CN112531060A (en) * | 2020-11-20 | 2021-03-19 | 浙江爱旭太阳能科技有限公司 | Crystal silicon photovoltaic module with low irradiation performance |
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| CN102660723B (en) * | 2012-05-17 | 2014-03-12 | 合肥工业大学 | Rare-earth modified tin alloy for continuous hot-dip coating of copper wire and copper-coated metal composite wire, and manufacturing method thereof |
| CN104008787A (en) * | 2014-06-03 | 2014-08-27 | 江西理工大学 | High-temperature-resistant tinned copper wire |
| CN204577444U (en) * | 2015-01-04 | 2015-08-19 | 印冰 | Reflective solder strip |
| CN204348744U (en) * | 2015-01-27 | 2015-05-20 | 苏州阿特斯阳光电力科技有限公司 | A kind of solar module |
| CN105006492A (en) * | 2015-07-24 | 2015-10-28 | 苏州宇邦新型材料股份有限公司 | Segmented serrated solder strip and photovoltaic module and preparation method thereof |
| CN105118882A (en) * | 2015-09-16 | 2015-12-02 | 同享（苏州）电子材料科技有限公司 | Low-temperature light-reflecting solder strip |
| CN105355258A (en) * | 2015-11-13 | 2016-02-24 | 芜湖楚江合金铜材有限公司 | High-performance tin-coated copper wire |
| CN205810837U (en) * | 2016-05-31 | 2016-12-14 | 韩华新能源（启东）有限公司 | The photovoltaic module of new structure is with being coated with stannum band |
| CN106024959B (en) * | 2016-07-18 | 2019-09-10 | 邓琴 | A kind of solar battery sheet structuring high-gain reflective solder strip |
| CN106711264B (en) * | 2016-12-16 | 2019-12-31 | 苏州宇邦新型材料股份有限公司 | Sectional dotting embossing solder strip, photovoltaic module and manufacturing method thereof |
| CN106449836A (en) * | 2016-12-21 | 2017-02-22 | 常州天合光能有限公司 | Segmented slightly light-concentrating welding belt and preparation thereof |
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