CN106505123A - A kind of photovoltaic module is with efficient stagewise twill welding - Google Patents
A kind of photovoltaic module is with efficient stagewise twill welding Download PDFInfo
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- CN106505123A CN106505123A CN201611267743.0A CN201611267743A CN106505123A CN 106505123 A CN106505123 A CN 106505123A CN 201611267743 A CN201611267743 A CN 201611267743A CN 106505123 A CN106505123 A CN 106505123A
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- 238000003466 welding Methods 0.000 title claims abstract description 96
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 238000000576 coating method Methods 0.000 claims abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 claims abstract description 27
- 239000010949 copper Substances 0.000 claims abstract description 27
- 239000011159 matrix material Substances 0.000 claims abstract description 20
- 238000009826 distribution Methods 0.000 claims abstract description 6
- 238000005253 cladding Methods 0.000 claims abstract description 5
- 239000003550 marker Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002372 labelling Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001074 Lay pewter Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to solar photovoltaic generation system technical field, more particularly, to the interconnection technique field of photovoltaic module cell piece, a kind of photovoltaic module is disclosed with efficient stagewise twill welding, it is made up of the scolding tin coating of copper strips matrix and the cladding copper strips matrix, the upper and lower surface of the welding is respectively twill face and plane, the twill face is included along welding length direction successively alternatively distributed embossed section and planar section, the copper strips matrix is provided with multiple V-grooves of parallel distribution in embossed section part, and coated by the scolding tin coating, for making projection light diffuse-reflectance thereon.Welding of the present invention effectively can reduce blocking the impact of light source and welding reflection optical losses greatly to photovoltaic module cell piece generating efficiency because of welding, effectively improve utilization rate of the photovoltaic module to light, improve the output of photovoltaic module.
Description
Technical field
The present invention relates to solar photovoltaic generation system technical field, more particularly, to the connection skill of photovoltaic module cell piece
Art field.
Background technology
Photovoltaic welding belt also known as tin-coated copper strip or applies stannum copper strips, is the important raw and processed materials during welding photovoltaic component, and which is led
It is to play connection and the electric action of cell piece and rosette in the production of photovoltaic module to want function, and the quality of welding quality will be straight
The collection efficiency for having influence on photovoltaic module electric current is connect, the power of photovoltaic module is affected very big.Photovoltaic welding belt matrix is copper strips,
Hot dip or plating, such as accompanying drawing 1 are carried out with the Sn-containing alloy such as SAC, leypewter or gun-metal material around copper strips
Shown, the upper and lower thickness uniformity of tin coating, primarily serves the effect of protection and welding by generally 15-30 μm.
Prior art welding surface is clean smooth surface, makes after component with welding of battery film, and light source is mapped to welding
Upper almost all is reflexed in air, and on cell piece, the light source for therefore being blocked by welding is or not the light source diffuse-reflectance of small part
Can be utilized well.Meanwhile, the scolding tin in welding non-solder face can only play a part of to prevent Copper base material from corroding, so non-solder
The solder thickness increase in face does not have practical significance, can only increase cost so that the performance of welding is worse, is less useful for terminal client
Welded.
Content of the invention
The technical problem to be solved in the present invention is to provide a kind of efficient stagewise twill welding of photovoltaic module, can be effective
Reduce, because welding blocks the impact of light source and welding reflection optical losses greatly to photovoltaic module cell piece generating efficiency, effectively improving light
Volt utilization rate of the component to light, improves the output of photovoltaic module.
For solving above-mentioned technical problem, the technical solution used in the present invention is:A kind of efficient stagewise of photovoltaic module
Twill welding, is made up of the scolding tin coating of copper strips matrix and the cladding copper strips matrix, and the upper and lower surface of the welding is respectively
Twill face and plane, the twill face are included along welding length direction successively alternatively distributed embossed section and planar section, the copper
Ribbon matrix is provided with multiple V-grooves of parallel distribution in embossed section part, and is coated by the scolding tin coating, for making to be projeced into which
On light diffuse-reflectance.Copper strips matrix is copper ribbon base.
Further, the V-groove is diagonally disposed along the welding length direction.
The groove depth of the V-groove be 0.03-0.2mm, its angle is 60-120 °, V-groove bottom and the welding plane it
Between distance be not less than 0.05mm.
Further, on the twill face, the length of embossed section is 140-180mm, and the length of planar section is 110-140mm.
Further, on the twill face, one end of embossed section is additionally provided with marker field, the marker field be provided with label or
Chromatic zones, for indicating position of the embossed section on welding.
The labelling segment length is 0.1-5mm.
Further, the thickness of the welding is 0.15-0.3mm, and width is 0.8-2.0mm.
Further, on the twill face, the thickness of embossed section scolding tin coating is 1-10 μm, right in the plane of the welding
The scolding tin thickness of coating for answering the embossed section band of position is 15-30 μm.
On the twill face, the thickness of planar section scolding tin coating is 15-30 μm, corresponding described flat in the plane of the welding
The scolding tin thickness of coating in face fragment position region is 1-10 μm.
The scolding tin coating by hot dip or is plated on the copper strips matrix.
Hot dip refers to that the copper strips matrix for crossing cleaning treatment is put into a period of time in the soldering alloy pond that dissolves, and further takes out,
Copper strips matrix surface is made to wrap scolding tin coating.
It is using the beneficial effect produced by above-mentioned technical proposal:The one side of welding of the present invention is set to twill face, its
The embossed section that V-groove arranged in parallel is constituted is provided with, the most of light diffuse-reflectance in embossed section can be emitted onto to electricity
On the piece of pond, reduce and the light that the cell piece light-receiving area that cell piece causes reduces and welding reflection optical losses are caused is blocked because of welding
The low impact to output power of photovoltaic module of source utilization rate, can effectively improve utilization rate of the cell piece to light, make photovoltaic module
Output effectively lifted.
Welding of the present invention can effectively save the consumption of required scolding tin by the thickness of reduction non-solder face scolding tin coating,
The manufacturing cost of welding is reduced, and reduces will not welding and the welding performance of cell piece, welded beneficial to terminal client
Operation, and by increasing the thickness of copper strips, both can guarantee that welding had more preferable tensile strength, and be capable of the conduction of improving product again
Rate, and then improve the generated output of photovoltaic module.
Description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Fig. 1 is the schematic diagram of prior art photovoltaic welding belt;
Fig. 2 is a kind of schematic diagram in the twill face of embodiment of welding of the present invention, and the twill face may be disposed at prior art shown in Fig. 1
Above photovoltaic welding belt or below;
Fig. 3 be with the welding of twill face shown in Fig. 2 embossed section and planar section junction along welding length direction sectional view;
Fig. 4 is another kind of example structure schematic diagram of welding embossed section of the present invention.
Wherein, 1, copper strips matrix;2nd, scolding tin coating;3rd, embossed section;4th, planar section;5th, marker field;31st, V-groove.
Specific embodiment
In order to solve, prior art photovoltaic solder strip blocks cell piece and reflection optical losses are big, makes photovoltaic module cell piece pair
The problem that the utilization rate of light reduces, the invention provides a kind of photovoltaic module is with efficient stagewise twill welding, by copper strips matrix 1
Constitute with the scolding tin coating 2 of cladding copper strip matrix 1, the upper and lower surface of welding is respectively twill face and plane, and twill face includes edge
Welding length direction alternatively distributed embossed section 3 and planar section 4 successively, are shown in that Fig. 2, copper strips matrix 1 are provided with flat in 3 part of embossed section
Multiple V-grooves 31 of row distribution, and coated by scolding tin coating 2, see Fig. 3 and Fig. 4, for making projection light diffuse-reflectance thereon,
Most of light diffuse-reflectance is made on cell piece, it is to avoid light is reflexed in air and lost, and improves utilization of the cell piece to light
Rate, is lifted can the generating efficiency of photovoltaic module, and output increases.
V-groove 31 on the face of welding twill shown in Fig. 2 is diagonally disposed along welding length direction.
For improving irreflexive effect, further improve, the groove depth of V-groove 31 is 0.03-0.2mm, and its angle is 60-
120°.
Multiple V-grooves 31 of parallel distribution continuously can be arranged, as shown in figure 3, diffuse-reflectance effect further can be improved.
Multiple V-grooves 31 of parallel distribution also space set, as shown in figure 4, plane is provided between adjacent V-groove 31,
As coupling surface, the tensile strength of welding is on the one hand improved, and when on the other hand making component package, welding is bonding with EVA closely firm
Gu.
For ensureing that welding has enough intensity, prevent welding from rupturing at V-groove 31,31 bottom of V-groove is put down with welding
The distance between face is not less than 0.05mm.
Further improve, the battery chip size of prior art mainstream applications is 156mm × 156mm, welding of the present invention with
Coupling design, on its twill face, the length of embossed section 3 is 140-180mm, and the length of planar section 4 is 110-140mm.
For the cell piece of other sizes, those skilled in the art can voluntarily select suitable embossed section 3 and planar section 4
Length, there is no technical difficulty.
Welding twill face of the present invention to side plane be used for weld front main grid line for battery piece, the plane on welding twill face
Section 4 is used for the backplate of another cell piece of Series connection welding.
It is aligned with cell piece for ease of welding during welding, on twill face, one end of embossed section 3 is additionally provided with marker field 5, labelling
Section 5 is used for indicating position of the embossed section 3 on welding, sees Fig. 2, can be used in automatic welding machine seam recognition embossed section 3 and position
Calibration is put, embossed section is aligned with cell piece front.Preferably, 5 length of marker field is 0.1-5mm.
Marker field 5 can be indicated by color.For example, by laser on scolding tin coating 2 transient irradiation, by irradiated site
Color changes, and is white light tone, high with unirradiated area identification, and identification degree is good.
The thickness of welding can determine according to the number of the thickness of cell piece and short circuit current flow that the width of welding is according to battery
Main grid line width determine.
Welding of the present invention preferably its thickness is 0.15-0.3mm, and width is 0.8-2.0mm.
Further improvement to welding of the present invention, on twill face, the thickness of 3 scolding tin coating 2 of embossed section is 1-10 μm, welding
Plane on 2 thickness of scolding tin coating of corresponding 3 band of position of embossed section be 15-30 μm;4 scolding tin coating 2 of planar section on twill face
Thickness be 15-30 μm, in the plane of welding, 2 thickness of scolding tin coating of 4 band of position of corresponding flat section is 1-10 μm, such as Fig. 3
Shown.The setting of 2 thickness of welding each position scolding tin coating, it is ensured that welding is 15-30 with 2 thickness of welding of battery film face scolding tin coating
μm, 2 thickness of non-solder face scolding tin coating is 1-10 μm, compared with prior art, can effectively save scolding tin needed for manufacture welding
Consumption, reduce the manufacturing cost of welding, and reduce will not welding and the welding performance of cell piece, enter beneficial to terminal client
Row welding operation, and by increasing the thickness of copper strips, both can guarantee that welding had more preferable tensile strength, again being capable of improving product
Conductivity, and then improve photovoltaic module generated output.
The composition of scolding tin coating 2 of the present invention, those skilled in the art voluntarily can be selected as needed, by hot dip or electricity
It is plated on copper strips matrix 1.
Above the present invention is described in detail, in the present invention, applies specific case to carry out embodiments of the present invention
Illustrate, the explanation of above example is only intended to help and understands the present invention, it is noted that for the technology people of the art
For member, under the premise without departing from the principles of the invention, also some improvement can be carried out to the present invention, these improvement also fall into this
In bright scope of the claims.
Claims (10)
1. a kind of photovoltaic module is with efficient stagewise twill welding, by copper strips matrix(1)With the cladding copper strips matrix(1)Weldering
Tin coating(2)Constitute, it is characterised in that:The upper and lower surface of the welding is respectively twill face and plane, and the twill face includes
Along welding length direction successively alternatively distributed embossed section(3)And planar section(4), the copper strips matrix(1)In embossed section(3)Portion
It is arranged with multiple V-grooves of parallel distribution(31), and by the scolding tin coating(2)Cladding, for overflowing projection light thereon
Reflection.
2. photovoltaic module according to claim 1 is with efficient stagewise twill welding, it is characterised in that the V-groove(31)
Diagonally disposed along the welding length direction.
3. photovoltaic module according to claim 2 is with efficient stagewise twill welding, it is characterised in that the V-groove(31)
Groove depth be 0.03-0.2mm, its angle is 60-120 °, V-groove(31)The distance between bottom and described welding plane be not little
In 0.05mm.
4. photovoltaic module according to claim 1 is with efficient stagewise twill welding, it is characterised in that on the twill face
Embossed section(3)Length be 140-180mm, planar section(4)Length be 110-140mm.
5. photovoltaic module according to claim 1 is with efficient stagewise twill welding, it is characterised in that on the twill face
Embossed section(3)One end be additionally provided with marker field(5), the marker field(5)Label or chromatic zones is provided with, for indicating the pressure
Flower section(3)Position on welding.
6. photovoltaic module according to claim 5 is with efficient stagewise twill welding, it is characterised in that the marker field(5)
Length is 0.1-5mm.
7. photovoltaic module according to claim 1 is with efficient stagewise twill welding, it is characterised in that the thickness of the welding
Spend for 0.15-0.3mm, width is 0.8-2.0mm.
8. photovoltaic module according to claim 1 is with efficient stagewise twill welding, it is characterised in that on the twill face
Embossed section(3)Scolding tin coating(2)Thickness be 1-10 μm, the corresponding embossed section in the plane of the welding(3)The band of position
Scolding tin coating(2)Thickness is 15-30 μm.
9. photovoltaic module according to claim 1 is with efficient stagewise twill welding, it is characterised in that on the twill face
Planar section(4)Scolding tin coating(2)Thickness be 15-30 μm, the corresponding planar section in the plane of the welding(4)The band of position
Scolding tin coating(2)Thickness is 1-10 μm.
10. photovoltaic module according to claim 1 is with efficient stagewise twill welding, it is characterised in that the scolding tin coating
(2)By hot dip or it is plated on the copper strips matrix(1)On.
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CN201611267743.0A CN106505123A (en) | 2016-12-31 | 2016-12-31 | A kind of photovoltaic module is with efficient stagewise twill welding |
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Cited By (8)
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CN108365044A (en) * | 2018-04-25 | 2018-08-03 | 无锡市斯威克科技有限公司 | A kind of twill formula reflection-type reflective solder strip |
CN108417657A (en) * | 2018-03-28 | 2018-08-17 | 浙江晶科能源有限公司 | A kind of photovoltaic welding belt and photovoltaic module |
CN108470792A (en) * | 2018-05-30 | 2018-08-31 | 无锡尚德太阳能电力有限公司 | Segmented color matching photovoltaic welding belt and its manufacturing method |
CN108538947A (en) * | 2018-06-08 | 2018-09-14 | 浙江宝利特新能源股份有限公司 | A kind of segmented coloring photovoltaic welding belt and photovoltaic module |
CN108598205A (en) * | 2018-05-04 | 2018-09-28 | 浙江晶科能源有限公司 | It a kind of optically focused weldering section and its cuts out phase method, cut out section apparatus |
CN111223953A (en) * | 2019-11-29 | 2020-06-02 | 英利能源(中国)有限公司 | Reflective welding strip, photovoltaic module and preparation method |
CN112531060A (en) * | 2020-11-20 | 2021-03-19 | 浙江爱旭太阳能科技有限公司 | Crystal silicon photovoltaic module with low irradiation performance |
CN114188430A (en) * | 2021-12-06 | 2022-03-15 | 中节能太阳能科技(镇江)有限公司 | A split type pair welds area for photovoltaic module |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN108598205A (en) * | 2018-05-04 | 2018-09-28 | 浙江晶科能源有限公司 | It a kind of optically focused weldering section and its cuts out phase method, cut out section apparatus |
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CN108470792A (en) * | 2018-05-30 | 2018-08-31 | 无锡尚德太阳能电力有限公司 | Segmented color matching photovoltaic welding belt and its manufacturing method |
CN108538947A (en) * | 2018-06-08 | 2018-09-14 | 浙江宝利特新能源股份有限公司 | A kind of segmented coloring photovoltaic welding belt and photovoltaic module |
CN111223953A (en) * | 2019-11-29 | 2020-06-02 | 英利能源(中国)有限公司 | Reflective welding strip, photovoltaic module and preparation method |
CN112531060A (en) * | 2020-11-20 | 2021-03-19 | 浙江爱旭太阳能科技有限公司 | Crystal silicon photovoltaic module with low irradiation performance |
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