CN108417640B - 一种基于毛细凝聚现象的纳米纤维焊接方法 - Google Patents
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Abstract
本发明公开了一种基于毛细凝聚现象的纳米纤维焊接方法,首先制备ZrO2高k介质薄膜;再制备纳米纤维;对毛细焊接处理;进行高温煅烧;最后将离子束沉积源漏电极,得到纳米纤维场效应晶体管。本发明的有益效果是减少了纤维间的接触电阻,提高了器件的整体性能。
Description
技术领域
本发明属于静电纺丝纳米纤维场效应晶体管技术领域,涉及一种新型的基于毛细凝聚现象的纳米纤维焊接方法和高性能的静电纺丝纳米纤维晶体管的制备方法。
背景技术
最近一、二十年,伴随着纳米科技的崛起,一维纳米材料已成为科学研究的热点之一;凭借其独特的物理结构,展现出了优于块材和薄膜的电、磁、力、热、光等物理及化学特性(Chem.Soc.Rev.41,5285,2012)。物理、化学气相沉积技术凭借其高质量的单晶制备工艺、精确的组分控制已成为目前科学研究的首选。但是这项技术需要昂贵的设备、苛刻的真空生长环境、所制备的产品尺寸较小,这些特点无疑增加了生产成本并且限制其大面积生产和应用。相比之下,静电纺丝(Electrospinning)工艺具有独特的优点:1)不需要昂贵的实验设备,在大气环境中即可进行,生产成本低;2)产量高,可大面积成膜,能够满足未来产业化的需求;3)经过前驱体调控,很容易定量均匀的掺入目标元素,实现分子水平上的均匀掺杂;4)可以原位制作光电子器件,避免了复杂的转移过程。因此,凭借上述优势,静电纺丝技术有望在未来替代各种一维纳米材料制备技术成为产业上生产一维纳米材料的主流制备工艺(Adv.Mater.16,1151,2004)。
尽管研究人员付出了大量的努力,但是静电纺丝纳米纤维场效应晶体管的器件性能还是差强人意。无论是有机半导体材料还是金属氧化物半导体材料,已报道的器件性能都远小于应用要求,极大的压制了这个极被看好的研究方向的发展。根据我们对器件结构的分析,性能低劣的主要原因是半导体纳米纤维间的接触电阻。电纺纳米纤维的相互交叠会形成一种三维网络结构,不良的电子接触显然会造成器件性能的恶化。现有的纳米纤维焊接技术主要是热压焊接和化学交联焊接。然而,热压焊接很难应用到熔点较高的聚合物材料,比如聚酰亚胺;交联焊接所使用的交联剂对自然环境和人体健康是有害的。至今,并没有一种简单易行、应用范围广泛和环保的焊接办法,来解决纳米纤维的不良电子接触。
毛细凝聚是一种神奇的自然现象,也被科学家广泛研究,用来实现干燥环境集水、可控水传输和纳米结构组装等。根据开尔文公式和众多的科学研究,在小的结构尺度上,即使没有达到饱和蒸气压,液体的毛细凝聚也是会发生的。纳米纤维间的空隙具有极小的结构尺度,完全可以实现空隙处的蒸汽凝聚。因此设计一种基于毛细凝聚现象的纳米纤维焊接方法和高性能的静电纺丝纳米纤维晶体管的制备方法是完全可行的,具有良好的经济效益和社会效益。
发明内容
本发明的目的在于提供一种基于毛细凝聚现象的纳米纤维焊接方法,本发明的有益效果是通过纳米纤维间的蒸汽凝聚实现纳米纤维的焊接,减少了纤维间的接触电阻,提高了器件的整体性能。
本发明所采用的技术方案是按照以下步骤进行:
步骤1:制备ZrO2高k介质薄膜;
先将硝酸锆加入乙二醇甲醚中,配制ZrO2介电层前驱体溶液,在磁力搅拌器中旋转,得到纯净透明的介电层前驱体溶液;采用单面抛光P型低阻硅作为衬底,用氢氟酸、丙酮和酒精依次对低阻硅衬底超声波清洗,再用去离子水冲洗后用高纯氮气吹干备用;使用匀胶机在P型低阻硅衬底上旋涂ZrO2介电层前驱体溶液,放置于烤胶台上烘烤,再进行高温退火,得到ZrO2高k介质薄膜;
步骤2:制备纳米纤维;
将氯化铟、聚乙烯吡咯烷酮加入到N,N二甲基甲酰胺中,用磁力搅拌器旋转,得到透明的粘性的前驱体溶液备用;将ZrO2高k介质薄膜放置在静电纺丝装置接收端,静电纺丝装置针头处连接直流高压电源,在电场力、库仑力、表面张力作用下,前驱体溶液喷出并剧烈抖动,纳米纤维直径显著下降,最后被接收端接受,得到均匀分布的In2O3复合纳米纤维;
步骤3:毛细焊接处理;
将In2O3复合纳米纤维放置于溶剂蒸汽中处理,处理后得到具有良好纳米纤维间接触的In2O3复合纳米纤维;
步骤4:高温煅烧;
对In2O3复合纳米纤维进行高温煅烧,分解其中的有机物,形成得到氧化物纳米纤维网络;
步骤5:离子束沉积源漏电极;
将氧化物纳米纤维网络放入离子束腔室,将离子束的灯丝预热;待灯丝预热完成后对Au、Ti或Al靶材预溅射,预溅射的作用是去除Au、Ti或Al靶材表面的污染物;再将遮蔽的定型In2O3纳米纤维网络暴露并移至相应的Au、Ti或Al靶位,再次对靶材进行溅射,使得In2O3纳米纤维网络沉积Au、Ti或Al金属薄膜,即制得In2O3/ZrO2纳米纤维场效应晶体管。
进一步,步骤1中将硝酸锆加入乙二醇甲醚中,配制浓度为0.2摩尔/升的ZrO2介电层前驱体溶液。
所述步骤1中匀胶机先设置500转/分匀胶旋涂5秒,然后设置5000转/分匀胶旋涂30秒后放置于150℃的烤胶台上烘烤10分钟,再对其进行高温600℃退火,退火时间为2小时。
进一步,步骤2中将0.2克氯化铟、0.8克聚乙烯吡咯烷酮,聚乙烯吡咯烷酮为130万分子量,加入到5ml N,N二甲基甲酰胺中。
进一步,步骤2中静电纺丝装置针头处连接直流高压电源,接收端距离针头为15cm。
进一步,步骤3中溶剂蒸汽为N,N二甲基甲酰胺、酒精、水、双氧水蒸汽。
进一步,步骤4中对In2O3复合纳米纤维进行500℃高温煅烧90分钟。
进一步,步骤5中真空度为3×10-4Pa,氩气流量为4SCCM,将离子束的灯丝电流加至4A后预热5分钟。
进一步,步骤5中待灯丝预热完成后设置加速电流为10mA、放电电压70V和工作气压4×10-2Pa;对Au、Ti或Al靶材预溅射10分钟。
附图说明
图1为本发明制备的毛细焊接纳米纤维场效应晶体管的结构原理示意图;
图2为本发明涉及的纳米纤维毛细焊接前后纳米纤维形貌对比;
图3为本发明制备的毛细焊接纳米纤维场效应晶体管的输出特性曲线;
图4为本发明制备的毛细焊接纳米纤维场效应晶体管的转移特性曲线。
具体实施方式
图1为本发明制备的毛细焊接纳米纤维场效应晶体管的结构原理示意图,下面结合具体实施方式对本发明进行详细说明。
本实施例涉及的毛细焊接制备纳米纤维场效应晶体管的工艺步骤主要包括:
(1)制备ZrO2高k介质薄膜:
先将硝酸锆加入乙二醇甲醚中,配制浓度为0.2摩尔/升的ZrO2介电层前驱体溶液,在磁力搅拌器中旋转12小时,得到纯净透明的介电层前驱体溶液;采用单面抛光P型低阻硅(~0.0015Ω·cm)作为衬底,用氢氟酸、丙酮和酒精依次对低阻硅衬底超声波清洗各10分钟,再用去离子水冲洗后用高纯氮气吹干备用;使用匀胶机在P型低阻硅衬底上旋涂ZrO2介电层前驱体溶液,匀胶机先设置500转/分匀胶旋涂5秒,然后设置5000转/分匀胶旋涂30秒后放置于150℃的烤胶台上烘烤10分钟,再对其进行高温600℃退火,退火时间为2小时,得到厚度为20纳米的ZrO2高k介质薄膜;
(2)制备纳米纤维:
将0.2克氯化铟、0.8克聚乙烯吡咯烷酮(130万分子量)加入到5ml N,N二甲基甲酰胺中,用磁力搅拌器旋转12小时,得到透明的粘性的前驱体溶液备用;将步骤1制备得到的ZrO2高k介质薄膜放置在静电纺丝装置接收端,静电纺丝装置针头处连接直流高压电源,接收端距离针头为15cm;设置注射泵推进速度为0.5毫升/小时,直流高压为15千伏,在电场力、库仑力、表面张力等作用下,前驱体溶液喷出并剧烈抖动,纳米纤维直径显著下降,最后被接收端接受,得到均匀分布的In2O3复合纳米纤维;
(3)毛细焊接处理:
将步骤2制备的In2O3复合纳米纤维放置于溶剂(N,N二甲基甲酰胺、酒精、水、双氧水等)蒸汽中,用溶剂蒸汽处理10秒,处理后得到具有良好纳米纤维间接触的毛细焊接纳米纤维(图2);
(4)高温煅烧:
对步骤3得到的In2O3复合纳米纤维进行500℃高温煅烧90分钟,分解其中的有机物,形成得到氧化物纳米纤维网络;
(5)离子束沉积源漏电极:
将步骤4中制得的氧化物纳米纤维网络即In2O3纳米纤维网络放入离子束腔室,设置真空度为3×10-4Pa,氩气流量为4SCCM,将离子束的灯丝电流加至4A后预热5分钟;待灯丝预热完成后设置加速电流为10mA、放电电压70V和工作气压4×10-2Pa;对Au、Ti或Al靶材预溅射10分钟,预溅射的作用是去除Au、Ti或Al靶材表面的污染物;再将遮蔽的定型In2O3纳米纤维网络暴露并移至相应的Au、Ti或Al靶位,在保持上述参数不变的情况下再次对靶材进行溅射60分钟,使得In2O3纳米纤维网络沉积Au、Ti或Al金属薄膜,即制得In2O3/ZrO2纳米纤维场效应晶体管。
将本实施例制成的In2O3/ZrO2纳米纤维场效应晶体管行测试,输出特性曲线测试如图3,转移特性曲线测试如图4。
本实施例制得In2O3/ZrO2纳米纤维场效应晶体管的结构包括P型低阻硅衬底、ZrO2层、In2O3纳米纤维层、电极S和电极D;P型低阻硅衬底、ZrO2层和In2O3纳米纤维层由下向上依次制备,电极S和电极D分别固定设置在In2O3纳米纤维层的两端。
本发明的优点还在于毛细焊接改善了纳米纤维间不良电子接触,减少了纤维间的接触电阻,有利于载流子传输,并且提高了器件的整体性能;其制备低成本,工艺简单,原理可靠,产品性能好,器件稳定性好,应用前景广阔,为大面积制备高性能的纳米纤维电子器件提供了可行性方案。
以上所述仅是对本发明的较佳实施方式而已,并非对本发明作任何形式上的限制,凡是依据本发明的技术实质对以上实施方式所做的任何简单修改,等同变化与修饰,均属于本发明技术方案的范围内。
Claims (8)
1.一种基于毛细凝聚现象的纳米纤维焊接方法,其特征在于按照以下步骤进行:
步骤1:制备ZrO2高k介质薄膜;
先将硝酸锆加入乙二醇甲醚中,配制ZrO2介电层前驱体溶液,在磁力搅拌器中旋转,得到纯净透明的介电层前驱体溶液;采用单面抛光P型低阻硅作为衬底,用氢氟酸、丙酮和酒精依次对低阻硅衬底超声波清洗,再用去离子水冲洗后用高纯氮气吹干备用;使用匀胶机在P型低阻硅衬底上旋涂ZrO2介电层前驱体溶液,放置于烤胶台上烘烤,再进行高温退火,得到ZrO2高k介质薄膜;
步骤2:制备纳米纤维;
将氯化铟、聚乙烯吡咯烷酮加入到N,N二甲基甲酰胺中,用磁力搅拌器旋转,得到透明的粘性的前驱体溶液备用;将ZrO2高k介质薄膜放置在静电纺丝装置接收端,静电纺丝装置针头处连接直流高压电源,在电场力、库仑力、表面张力作用下,前驱体溶液喷出并剧烈抖动,纳米纤维直径显著下降,最后被接收端接受,得到均匀分布的In2O3复合纳米纤维;
步骤3:毛细焊接处理;
将In2O3复合纳米纤维放置于溶剂蒸汽中处理,处理后得到具有良好纳米纤维间接触的In2O3复合纳米纤维;
步骤4:高温煅烧;
对In2O3复合纳米纤维进行高温煅烧,分解其中的有机物,形成得到氧化物纳米纤维网络;
步骤5:离子束沉积源漏电极;
将氧化物纳米纤维网络放入离子束腔室,将离子束的灯丝预热;待灯丝预热完成后对Au、Ti或Al靶材预溅射,预溅射的作用是去除Au、Ti或Al靶材表面的污染物;再将遮蔽的定型In2O3纳米纤维网络暴露并移至相应的Au、Ti或Al靶位,再次对靶材进行溅射,使得In2O3纳米纤维网络沉积Au、Ti或Al金属薄膜,即制得In2O3/ZrO2纳米纤维场效应晶体管。
2.按照权利要求1所述一种基于毛细凝聚现象的纳米纤维焊接方法,其特征在于:所述步骤1中将硝酸锆加入乙二醇甲醚中,配制浓度为0.2摩尔/升的ZrO2介电层前驱体溶液;
所述步骤1中匀胶机先设置500转/分匀胶旋涂5秒,然后设置5000转/分匀胶旋涂30秒后放置于150℃的烤胶台上烘烤10分钟,再对其进行高温600℃退火,退火时间为2小时。
3.按照权利要求1所述一种基于毛细凝聚现象的纳米纤维焊接方法,其特征在于:所述步骤2中将0.2克氯化铟、0.8克聚乙烯吡咯烷酮,聚乙烯吡咯烷酮为130万分子量,加入到5ml N,N二甲基甲酰胺中。
4.按照权利要求1所述一种基于毛细凝聚现象的纳米纤维焊接方法,其特征在于:所述步骤2中静电纺丝装置针头处连接直流高压电源,接收端距离针头为15cm。
5.按照权利要求1所述一种基于毛细凝聚现象的纳米纤维焊接方法,其特征在于:所述步骤3中溶剂为N,N二甲基甲酰胺、酒精、水、双氧水。
6.按照权利要求1所述一种基于毛细凝聚现象的纳米纤维焊接方法,其特征在于:所述步骤4中对In2O3复合纳米纤维进行500℃高温煅烧90分钟。
7.按照权利要求1所述一种基于毛细凝聚现象的纳米纤维焊接方法,其特征在于:所述步骤5中真空度为3×10-4Pa,氩气流量为4SCCM,将离子束的灯丝电流加至4A后预热5分钟。
8.按照权利要求1所述一种基于毛细凝聚现象的纳米纤维焊接方法,其特征在于:所述步骤5中待灯丝预热完成后设置加速电流为10mA、放电电压70V和工作气压4×10-2Pa;对Au、Ti或Al靶材预溅射10分钟。
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US20170137943A1 (en) * | 2015-11-16 | 2017-05-18 | Lam Research Corporation | Apparatus for uv flowable dielectric |
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