CN108417289A - 用于形成太阳能电池电极的组合物和使用其制备的电极 - Google Patents
用于形成太阳能电池电极的组合物和使用其制备的电极 Download PDFInfo
- Publication number
- CN108417289A CN108417289A CN201810051191.2A CN201810051191A CN108417289A CN 108417289 A CN108417289 A CN 108417289A CN 201810051191 A CN201810051191 A CN 201810051191A CN 108417289 A CN108417289 A CN 108417289A
- Authority
- CN
- China
- Prior art keywords
- electrode
- solar battery
- composition
- compound
- frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 title abstract description 3
- 150000001875 compounds Chemical class 0.000 claims abstract description 48
- -1 compound compound Chemical class 0.000 claims abstract description 40
- 230000008859 change Effects 0.000 claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims description 26
- XMSXQFUHVRWGNA-UHFFFAOYSA-N Decamethylcyclopentasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XMSXQFUHVRWGNA-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 8
- 229910052714 tellurium Inorganic materials 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 claims description 6
- IUMSDRXLFWAGNT-UHFFFAOYSA-N Dodecamethylcyclohexasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 IUMSDRXLFWAGNT-UHFFFAOYSA-N 0.000 claims description 5
- VCYDUTCMKSROID-UHFFFAOYSA-N 2,2,4,4,6,6-hexakis-phenyl-1,3,5,2,4,6-trioxatrisilinane Chemical compound O1[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si]1(C=1C=CC=CC=1)C1=CC=CC=C1 VCYDUTCMKSROID-UHFFFAOYSA-N 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 4
- KBXJHRABGYYAFC-UHFFFAOYSA-N octaphenylsilsesquioxane Chemical compound O1[Si](O2)(C=3C=CC=CC=3)O[Si](O3)(C=4C=CC=CC=4)O[Si](O4)(C=5C=CC=CC=5)O[Si]1(C=1C=CC=CC=1)O[Si](O1)(C=5C=CC=CC=5)O[Si]2(C=2C=CC=CC=2)O[Si]3(C=2C=CC=CC=2)O[Si]41C1=CC=CC=C1 KBXJHRABGYYAFC-UHFFFAOYSA-N 0.000 claims description 4
- 239000013008 thixotropic agent Substances 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- NXJQTYOZFVTCEM-UHFFFAOYSA-N 2,4,6-triphenyl-1,3,5,2,4,6-trioxatrisilinane Chemical compound O1[SiH](C=2C=CC=CC=2)O[SiH](C=2C=CC=CC=2)O[SiH]1C1=CC=CC=C1 NXJQTYOZFVTCEM-UHFFFAOYSA-N 0.000 claims description 2
- CWNXOPXKENEODI-UHFFFAOYSA-N C[SiH]1O[SiH](C)O[Si](C)(CCC(F)(F)F)O1 Chemical compound C[SiH]1O[SiH](C)O[Si](C)(CCC(F)(F)F)O1 CWNXOPXKENEODI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- HJLARPLSJYOZTN-UHFFFAOYSA-N O1[SiH](C=2C=CC=CC=2)O[SiH](C=2C=CC=CC=2)O[SiH](C=2C=CC=CC=2)O[SiH]1C1=CC=CC=C1 Chemical compound O1[SiH](C=2C=CC=CC=2)O[SiH](C=2C=CC=CC=2)O[SiH](C=2C=CC=CC=2)O[SiH]1C1=CC=CC=C1 HJLARPLSJYOZTN-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000012963 UV stabilizer Substances 0.000 claims description 2
- 239000002518 antifoaming agent Substances 0.000 claims description 2
- 239000003963 antioxidant agent Substances 0.000 claims description 2
- 230000003078 antioxidant effect Effects 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000007822 coupling agent Substances 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000000049 pigment Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 230000035935 pregnancy Effects 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000003381 stabilizer Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- VSIKJPJINIDELZ-UHFFFAOYSA-N 2,2,4,4,6,6,8,8-octakis-phenyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound O1[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si]1(C=1C=CC=CC=1)C1=CC=CC=C1 VSIKJPJINIDELZ-UHFFFAOYSA-N 0.000 claims 1
- XUEXTJJSYQHTTC-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-2,4,6,8-tetraphenyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound O1[Si](C=C)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=C)O[Si](C=2C=CC=CC=2)(C=C)O[Si]1(C=C)C1=CC=CC=C1 XUEXTJJSYQHTTC-UHFFFAOYSA-N 0.000 claims 1
- JGWUKKFNKOUBPW-UHFFFAOYSA-N 2-ethenyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C=C[SiH]1O[SiH2]O[SiH2]O[SiH2]O1 JGWUKKFNKOUBPW-UHFFFAOYSA-N 0.000 claims 1
- ULTZXUWQIPJUAB-UHFFFAOYSA-N 2-methyl-2,4,6,8-tetraphenyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C[Si]1(O[SiH](O[SiH](O[SiH](O1)C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1 ULTZXUWQIPJUAB-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 22
- 210000004027 cell Anatomy 0.000 description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000004840 adhesive resin Substances 0.000 description 3
- 229920006223 adhesive resin Polymers 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000011267 electrode slurry Substances 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910006715 Li—O Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- DDJSWKLBKSLAAZ-UHFFFAOYSA-N cyclotetrasiloxane Chemical class O1[SiH2]O[SiH2]O[SiH2]O[SiH2]1 DDJSWKLBKSLAAZ-UHFFFAOYSA-N 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- KZVBBTZJMSWGTK-UHFFFAOYSA-N 1-[2-(2-butoxyethoxy)ethoxy]butane Chemical compound CCCCOCCOCCOCCCC KZVBBTZJMSWGTK-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- PSTCWAUANNUDIE-UHFFFAOYSA-N 2,4,6,8,10,12-hexamethyl-2,4,6,8,10,12-hexakis-phenyl-1,3,5,7,9,11-hexaoxa-2,4,6,8,10,12-hexasilacyclododecane Chemical compound O1[Si](C)(C=2C=CC=CC=2)O[Si](C)(C=2C=CC=CC=2)O[Si](C)(C=2C=CC=CC=2)O[Si](C)(C=2C=CC=CC=2)O[Si](C)(C=2C=CC=CC=2)O[Si]1(C)C1=CC=CC=C1 PSTCWAUANNUDIE-UHFFFAOYSA-N 0.000 description 1
- PUNGSQUVTIDKNU-UHFFFAOYSA-N 2,4,6,8,10-pentamethyl-1,3,5,7,9,2$l^{3},4$l^{3},6$l^{3},8$l^{3},10$l^{3}-pentaoxapentasilecane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O[Si](C)O1 PUNGSQUVTIDKNU-UHFFFAOYSA-N 0.000 description 1
- CHJTZPBQSJMLLC-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C=C[SiH]1O[SiH](C=C)O[SiH](C=C)O[SiH](C=C)O1 CHJTZPBQSJMLLC-UHFFFAOYSA-N 0.000 description 1
- IRVZFACCNZRHSJ-UHFFFAOYSA-N 2,4,6,8-tetramethyl-2,4,6,8-tetraphenyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound O1[Si](C)(C=2C=CC=CC=2)O[Si](C)(C=2C=CC=CC=2)O[Si](C)(C=2C=CC=CC=2)O[Si]1(C)C1=CC=CC=C1 IRVZFACCNZRHSJ-UHFFFAOYSA-N 0.000 description 1
- VLQZJOLYNOGECD-UHFFFAOYSA-N 2,4,6-trimethyl-1,3,5,2,4,6-trioxatrisilinane Chemical compound C[SiH]1O[SiH](C)O[SiH](C)O1 VLQZJOLYNOGECD-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- HJWYBFFQDXNWHV-UHFFFAOYSA-N 2-methylcyclotrisiloxane Chemical compound C[SiH]1O[SiH2]O[SiH2]O1 HJWYBFFQDXNWHV-UHFFFAOYSA-N 0.000 description 1
- VPJOGDPLXNTKAZ-UHFFFAOYSA-N 2-methylpropanoic acid;2,2,4-trimethylpentane-1,3-diol Chemical class CC(C)C(O)=O.CC(C)C(O)C(C)(C)CO VPJOGDPLXNTKAZ-UHFFFAOYSA-N 0.000 description 1
- IHRMXHHFNOEOEA-UHFFFAOYSA-N 2-phenyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C1(=CC=CC=C1)[SiH]1O[SiH2]O[SiH2]O[SiH2]O1 IHRMXHHFNOEOEA-UHFFFAOYSA-N 0.000 description 1
- UGOBWMIGDJRYRG-UHFFFAOYSA-N 2-phenyl-1,3,5,7,9,11-hexaoxa-2,4,6,8,10,12-hexasilacyclododecane Chemical compound C1(=CC=CC=C1)[SiH]1O[SiH2]O[SiH2]O[SiH2]O[SiH2]O[SiH2]O1 UGOBWMIGDJRYRG-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- 229910016336 Bi—Te—O Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 102100023033 Cyclic AMP-dependent transcription factor ATF-2 Human genes 0.000 description 1
- 229920003270 Cymel® Polymers 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- 101000974934 Homo sapiens Cyclic AMP-dependent transcription factor ATF-2 Proteins 0.000 description 1
- 101000997829 Homo sapiens Glial cell line-derived neurotrophic factor Proteins 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000779819 Syncarpia glomulifera Species 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- YDKAJGWMRVULRW-UHFFFAOYSA-N [O].[Si].[O].[Si] Chemical compound [O].[Si].[O].[Si] YDKAJGWMRVULRW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- SZOJKESAWDFSND-UHFFFAOYSA-N acetic acid;2-methyl-2-[(2-methylpropan-2-yl)oxy]propane Chemical compound CC(O)=O.CC(C)(C)OC(C)(C)C SZOJKESAWDFSND-UHFFFAOYSA-N 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- JJRDHFIVAPVZJN-UHFFFAOYSA-N cyclotrisiloxane Chemical class O1[SiH2]O[SiH2]O[SiH2]1 JJRDHFIVAPVZJN-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- AQEFLFZSWDEAIP-UHFFFAOYSA-N di-tert-butyl ether Chemical compound CC(C)(C)OC(C)(C)C AQEFLFZSWDEAIP-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 235000019439 ethyl acetate Nutrition 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000320 mechanical mixture Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 239000001739 pinus spp. Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- NSRBDSZKIKAZHT-UHFFFAOYSA-N tellurium zinc Chemical compound [Zn].[Te] NSRBDSZKIKAZHT-UHFFFAOYSA-N 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- 229940036248 turpentine Drugs 0.000 description 1
- 238000002525 ultrasonication Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
- C07F7/0805—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms
- C07F7/0807—Compounds with Si-C or Si-Si linkages comprising only Si, C or H atoms comprising Si as a ring atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/40—Glass
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0806—Silver
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0812—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0831—Gold
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0862—Nickel
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L2031/0344—Organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明提供一种用于太阳能电池电极的组合物和使用其制备的电极。用于太阳能电池电极的组合物包含:导电粉末;玻璃料;环硅氧烷化合物和硅倍半氧烷化合物中的至少一种化合物;以及有机媒剂。本发明在焙烤之后的电极的面积变化率低且因此在用于制造电极时能够展示极佳的可加工性和可靠性,且在焙烤之后具有例如接触电阻、串联电阻以及开路电压等极佳的电学特性同时提供高效率。
Description
相关申请案的交叉引用
本申请案主张于2017年2月9日提交的韩国专利申请案10-2017-0017907的权益,所述专利申请案的全部公开内容以引用的方式并入本文中。
技术领域
本发明涉及一种用于太阳能电池电极的组合物和使用其制备的电极。
背景技术
硅基太阳能电池包含由p型硅半导体所形成的衬底和由n型硅半导体所形成的发射极层。在p型衬底与n型发射极层之间形成p-n结。当日光进入具有此类结构的太阳能电池时,由于光生伏打效应,在由n型硅半导体形成的发射极层中产生作为多数载体(carrier)的电子,且在由p型硅半导体形成的衬底中产生作为多数载体的空穴。由于光生伏打效应而产生的电子和空穴分别移动到结合到发射极层的上表面和下表面的前电极和后电极,且当这些电极通过导线彼此连接时电流流动。通常,使用银(Ag)浆料形成前电极。对于焙烤型太阳能电池电极浆料,根据晶片制造工艺中的变量(例如,发射极薄层电阻的范围、由等离子体化学气相沈积法(PECVD)形成的防反射薄膜的厚度以及纹理化工艺期间的表面不均匀性)改变最佳焙烤条件。确切地说,由于发射极层的厚度不断减少以提高太阳能电池效率,因此由于太阳能电池电极浆料很可能发生分流。为制备在低薄层电阻到高薄层电阻的广泛范围的薄层电阻下可操作的电极浆料,有必要研发具有足够低的接触电阻却不会影响晶片的p-n结的玻璃料和电极浆料。
由于入射在太阳能电池上的日光并没有完全转化成电能,因此有必要减少高效太阳能电池的损耗因素。太阳能电池的损耗因素大体上可以分为光学损耗和电学损耗。光学损耗的实例包含当日光入射到太阳能电池上时太阳能电池表面处的反射、由于电极而造成的阴影损耗(shadow loss)以及波长依赖性损耗。
在典型的可商购的太阳能电池中,电极形成于日光入射在其上的太阳能电池的前表面上。当日光被电极的阴影阻挡时,形成死区(dead area),其促使日光的吸收减少。这被称作‘遮蔽’,其是高太阳能电池转化效率的障碍。尽管通过减少电极线宽来减少阴影是可能的,但简单减少电极线宽可能造成电极的截面积减少且因此增加串联电阻。
本发明的背景技术揭示于日本未审查专利公开案第2015-144162号中。
发明内容
本发明的一个方面是提供一种用于太阳能电池电极的组合物,其在焙烤之后的电极的面积变化率低且因此在用于制造电极时能够展示极佳的可加工性和可靠性。
本发明的另一方面是提供一种用于太阳能电池电极的组合物,其在焙烤之后具有例如接触电阻、串联电阻以及开路电压等极佳的电学特性同时提供高效率。
根据本发明的一个方面,用于太阳能电池电极的组合物包含:导电粉末;玻璃料;环硅氧烷化合物和硅倍半氧烷化合物中的至少一种化合物;以及有机媒剂。
根据本发明的另一方面,提供一种使用根据本发明的用于太阳能电池电极的组合物制造的电极。
本发明提供一种用于太阳能电池电极的组合物,其在焙烤之后的电极的面积的变化率低且因此在用于制造电极时能够展示极佳的可加工性和可靠性。
本发明提供一种用于太阳能电池电极的组合物,其在焙烤之后具有例如接触电阻、串联电阻以及开路电压等极佳的电学特性同时提供高效率。
附图说明
图1为根据本发明的一个实施例的太阳能电池的示意图。
具体实施方式
在下文中,将参考附图详细地描述本发明的实施例。应理解,本发明可以不同方式体现且不限于以下实施例。
用于太阳能电池电极的组合物
根据本发明的用于太阳能电池电极的组合物包含:导电粉末;玻璃料;环硅氧烷化合物和硅倍半氧烷化合物中的至少一种;以及有机媒剂。
确切地说,根据本发明的用于太阳能电池电极的组合物可具有如根据等式1计算出的60%或小于60%、优选地45%或小于45%、更优选地40%或小于40%的面积变化率。在此面积变化率的范围内,组合物可以减少焙烤后电极的收缩,同时在用于制造电极时具有极佳的可加工性和可靠性。
<等式1>
面积变化率=(|S1-S0/S0)×100
(其中S0表示通过印刷用于太阳能电池电极的组合物而形成的且不进行干燥和焙烤的电极的截面积(单位:μm2),且S1表示在300℃下进行干燥40秒且在800℃下进行焙烤60秒的电极的截面积(单位:μm2))。
确切地说,在测量根据等式1的面积变化率时,用于太阳能电池电极的组合物可以印刷的最大线宽为30μm到70μm,最大高度为10μm到20μm,且高宽比为0.15到0.30,随后测量S0和S1。此处,“高宽比”是指最大高度与最大宽度的比率(最大高度/最大宽度)。更确切地说,根据等式1的面积变化率可以在电极上测量,所述电极通过印刷用于太阳能电池电极的组合物获得以使得所述电极呈矩形、方形、三角形、梯形或具有一个半圆形截面的矩形或方形。更确切地说,根据等式1的面积变化率可以在通过丝网印刷而将用于太阳能电池电极的组合物沉积在单晶硅晶片上获得的电极上测量。
另外,尽管包含环硅氧烷化合物和硅倍半氧烷化合物中的至少一种,但用于太阳能电池电极的组合物焙烤之后提供例如接触电阻、串联电阻以及开路电压等极佳的电学特性。
现在,将更详细地描述根据本发明的用于太阳能电池电极的组合物的各组分。
导电粉末
导电粉末可包含银粉、金粉、铂粉、钯粉、铝粉以及镍粉中的至少一种金属粉末。确切地说,导电粉末可以包含银(Ag)粉。
导电粉末可具有纳米级或微米级的粒度。举例来说,导电粉末可具有几十纳米到数百纳米的粒度或几微米到几十微米的粒径。或者,导电粉末可为具有不同粒度的两种或多于两种类型的导电粉末的混合物。
导电粉末可具有各种粒子形状,例如球形、薄片形以及非晶形。
导电粉末可具有0.1μm到10μm、优选地0.5μm到5μm的平均粒径(D50)。在此范围内,组合物可以减少太阳能电池的接触电阻和串联电阻。平均粒径可以在25℃下,经由超声波处理将导电粉末分散于异丙醇(isopropyl alcohol,IPA)中3分钟之后,使用例如1064D型(西莱斯有限公司(CILAS Co.,Ltd.))来测量。
以用于太阳能电池电极的组合物的总重量计,导电粉末可以60wt%到95wt%的量存在。在此范围内,组合物可以提高太阳能电池的转化效率且可以容易地以浆料形式制备。优选地,以用于太阳能电池电极的组合物的总重量计,导电粉末以70wt%到90wt%的量存在。
玻璃料
玻璃料用于在用于太阳能电池电极的组合物的焙烤过程期间通过蚀刻防反射层及熔融导电粉末而在发射极区形成银晶粒。另外,玻璃料改善了导电粉末对晶片的粘附性且经软化以降低焙烤过程期间的焙烤温度。
根据本发明,玻璃料可包含玻璃化转变温度为200℃到300℃的低熔融点玻璃料。在此范围内,玻璃料可以提供良好的接触电阻。
根据本发明,玻璃料可为无铅玻璃料。确切地说,玻璃料可为包含元素铋和碲的铋碲氧化物(bismuth-tellurium-oxide;Bi-Te-O)基玻璃料。包含元素铋和碲的玻璃料可以提供良好的接触电阻及增加的开路电压。玻璃料可更包含除铋和碲以外的元素金属。举例来说,玻璃料可更包含锂(Li)、锌(Zn)、磷(P)、锗(Ge)、镓(Ga)、铈(Ce)、铁(Fe)、硅(Si)、钨(W)、镁(Mg)、铯(Cs)、锶(Sr)、钼(Mo)、钛(Ti)、锡(Sn)、铟(In)、钒(V)、钡(Ba)、镍(Ni)、铜(Cu)、钠(Na)、钾(K)、砷(As)、钴(Co)、锆(Zr)以及锰(Mn)中的至少一种。优选地,玻璃料为铋碲锌锂氧化物(bismuth-tellurium-zinc-lithium-oxide;Bi-Te-Zn-Li-O)基玻璃料。
玻璃料的形状和大小不受特定限制。举例来说,玻璃料可具有0.1μm到10μm的平均粒径(D50)。另外,玻璃料可以具有球形或非晶形形状。平均粒径(D50)可以在25℃下,经由超声波处理将玻璃料分散于异丙醇(isopropyl alcohol;IPA)中3分钟之后,使用例如1064D型(西莱斯有限公司(CILAS Co.,Ltd.))来测量。
玻璃料可由氧化碲、氧化铋、以及任选地上述金属和/或金属氧化物通过所属领域中已知的任何典型的方法来制备。举例来说,氧化碲、氧化铋、以及任选地金属和/或金属氧化物使用球磨机或行星式磨机来混合。接着将混合物在800℃到1300℃下熔融,随后骤冷到25℃。使用盘磨机、行星式磨机等磨机对所得物质进行粉碎,从而得到玻璃料。
以太阳能电池电极的组合物的总重量计,玻璃料可以0.1wt%到20wt%、优选地0.5wt%到10wt%的量存在。在此范围内,玻璃料能够保证p-n结在各种薄层电阻下的稳定性,使串联电阻降到最小且最终提高太阳能电池效率。
环硅氧烷化合物和硅倍半氧烷化合物
环硅氧烷化合物和硅倍半氧烷化合物能够减少根据等式1的面积变化率而不增加组合物的粘度。
环硅氧烷化合物为具有硅-氧-硅-氧的环的环硅氧烷化合物且可包含被取代或未被取代的环三硅氧烷、环四硅氧烷、环戊硅氧烷、环己硅氧烷、环庚硅氧烷、环辛硅氧烷、环壬硅氧烷以及环癸硅氧烷中的至少一种。如本文中所使用,术语“被取代”意味键合在硅氧烷中的硅(Si)上的至少一个氢原子被C1到C5的烷基(例如,甲基、乙基、丙基、丁基族群或戊基族群)、C2到C5的烯基(例如,乙烯基)、C6到C10的芳基(苯基族群)或C1到C5的卤代烷基族群(例如,三氟丙基族群)取代。
环硅氧烷化合物可包含六甲基环三硅氧烷、八甲基环四硅氧烷、十甲基环戊硅氧烷、十二甲基环己硅氧烷、十四甲基环庚硅氧烷、十八甲基环壬硅氧烷、四甲基环四硅氧烷、六苯基环三硅氧烷、四甲基四乙烯基环四硅氧烷(例如2,4,6,8-四甲基2,4,6,8-四乙烯基环四硅氧烷)、三(三氟丙基)三甲基环三硅氧烷(例如1,3,5三(3,3,3-三氟丙基)-1,3,5三甲基环三硅氧烷)、十六甲基环辛硅氧烷、五甲基环戊硅氧烷、六甲基环己硅氧烷、八苯基环四硅氧烷、三苯基环三硅氧烷、四苯基环四硅氧烷、四甲基四苯基环四硅氧烷、四乙烯基四苯基环四硅氧烷、六甲基六乙烯基环己硅氧烷、六甲基六苯基环己硅氧烷以及六乙烯基六苯基环己硅氧烷中的至少一种,但不限于此。
硅倍半氧烷化合物具有笼型结构且可包含由RSiO3/2(其中R为氢原子、C1到C5的烷基、C2到C5的烯基、C1到C5的烷氧基、或C6到C10的芳基)构成的硅倍半氧烷。举例来说,硅倍半氧烷化合物可包含八苯基硅倍半氧烷、八甲基硅倍半氧烷以及八乙烯基硅倍半氧烷中的至少一种,但不限于此。
以太阳能电池电极的组合物的总重量计,环硅氧烷化合物和硅倍半氧烷化合物中的至少一种化合物可以0.1wt%到2wt%的量存在。在此范围内,环硅氧烷化合物和硅倍半氧烷化合物中的至少一种化合物能够减少组合物的面积变化率且防止太阳能电池的电阻值增加。
有机媒剂
有机媒剂赋予适合的粘度和流变学特性以通过与用于太阳能电池电极的组合物的无机组分机械混合印刷到所述组合物中。
有机媒剂可以是在用于太阳能电池电极的组合物中使用的任何典型的有机媒剂且可包含粘合剂树脂、溶剂等。
粘合剂树脂可选自丙烯酸酯树脂或纤维素树脂。乙基纤维素通常用作粘合剂树脂。或者,粘合剂树脂可以是乙基羟乙基纤维素、硝化纤维、乙基纤维素和酚醛树脂的混合物、醇酸树脂、酚醛树脂、丙烯酸酯树脂、二甲苯树脂、聚丁烷树脂、聚酯树脂、尿素树脂、三聚氰胺树脂、醋酸乙烯酯树脂、木松脂、醇的聚甲基丙烯酸酯等。
溶剂可以从由(例如)下述者所组成的组中选出:己烷、甲苯、乙基溶纤剂、环己酮、丁基溶纤剂、丁基卡必醇(二甘醇单丁基乙醚)、二丁基卡比醇(二甘醇二丁基乙醚)、丁基卡必醇乙酸酯(二甘醇单丁基乙醚乙酸酯)、丙二醇单甲基乙醚、己二醇、松油醇、甲基乙基酮、苯甲醇、γ-丁内酯、乳酸乙酯以及2,2,4三甲基-1,3-戊二醇单异丁酸酯(例如十二醇酯)。这些可以单独使用或以其混合物形式使用。
以用于太阳能电池电极的组合物的总重量计,有机媒剂可以1wt%到30wt%的量存在。在此范围内,有机媒剂能够为组合物提供充足的粘合强度和极佳的可印刷性。
添加剂
根据本发明的用于太阳能电池电极的组合物可按需要更包含用以增强流动性、过程特性以及稳定性的典型的添加剂。添加剂可以包含分散剂、触变剂、塑化剂、粘度稳定剂、抗起泡剂、色素、UV稳定剂、抗氧化剂、偶合剂等。这些添加剂可以单独或以其混合物形式使用。以用于太阳能电池电极的组合物的总重量计,添加剂可以0.1wt%到5wt%的量存在,但添加剂的含量可视需要改变。
太阳能电池电极和包含其的太阳能电池
本发明的其它方面涉及由用于太阳能电池电极的组合物形成的电极和包含其的太阳能电池。图1显示根据本发明的一个实施例的太阳能电池。
参考图1,在包含p层(或n层)11和n层(或p层)12的晶片10或衬底上印刷用于电极的组合物作为发射极,随后焙烤形成背电极21和前电极23。举例来说,制备背电极的基本方法是通过在晶片的背表面上印刷组合物且在200℃到400℃下将所印刷的组合物干燥10秒到60秒来进行的。另外,制备前电极的基本方法可以通过在晶片的前表面上印刷组合物且干燥所印刷的组合物来进行的。接着,前电极23和背电极21可以通过在400℃到950℃下、优选地在700℃到950℃下将晶片焙烤30秒到210秒来形成。
接下来,将参考实例更详细地描述本发明。然而,应注意,提供这些实例仅用于说明且不应以任何方式解释为限制本发明。
实例1
向粘合剂溶液中添加作为有机粘合剂的在60℃下充分溶解于6.4wt%的十二醇酯(伊士曼化学公司(Eastman Chemical Company))中的0.5wt%的乙基纤维素(STD4,陶氏化学公司(Dow Chemical Company))、和具有2.0μm平均粒径的89.0wt%的球形银粉(AG-5-11F,多瓦高科技有限公司(DowaHightech Co.,Ltd.))、使用表1(平均粒径:1.0μm。玻璃化转变温度:273℃)中所列出的组分制备的2.5wt%的Bi-Te-Zn-Li-O基玻璃料、作为环硅氧烷化合物的0.8wt%的六甲基环三硅氧烷(H0725,东京化工(Tokyo Chemical Industry))、0.4wt%的分散剂BYK102(BYK化学(BYK-chemie))以及0.4wt%的触变剂Thixatrol ST(海名斯有限公司(Elementis Co.,Ltd.)),随后在3辊捏合机中混合及捏合,从而制备用于太阳能电池电极的组合物。
表1
Bi2O3 | TeO2 | ZnO | Li2O | |
量(wt%) | 15.8 | 53.8 | 13.2 | 17.2 |
实例2
除了将八甲基环四硅氧烷(O0142,东京化工)用作环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例3
除了将十甲基环戊硅氧烷(D1890,东京化工)用作环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例4
除了将十二甲基环己硅氧烷(D2040,东京化工)用作环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例5
除了将十四甲基环庚硅氧烷(T2678,东京化工)用作环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例6
除了将十八甲基环壬硅氧烷(O0425,东京化工)用作环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例7
除了将2,4,6,8-四甲基环四硅氧烷(T2076,东京化工)用作环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例8
除了将六苯基环三硅氧烷(H1248,东京化工)用作环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例9
除了将2,4,6,8-四甲基-2,4,6,8-四乙烯基环四硅氧烷(T2523,东京化工)用作环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例10
除了将1,3,5三(3,3,3三氟丙基)1,3,5三甲基环三硅氧烷(T3226,东京化工)用作环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例11
除了将八苯基硅倍半氧烷(O0349,东京化工)用作硅倍半氧烷化合物替代环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例12
除了将0.2wt%的十甲基环戊硅氧烷(D1890,东京化工)用作环硅氧烷化合物且使用7.0wt%的十二醇酯(伊士曼化学公司)外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例13
除了将1.4wt%的十甲基环戊硅氧烷(D1890,东京化工)用作环硅氧烷化合物且使用5.8wt%的十二醇酯(伊士曼化学公司)外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例14
除了将2.0wt%的十甲基环戊硅氧烷(D1890,东京化工)用作环硅氧烷化合物且使用5.2wt%的十二醇酯(伊士曼化学公司)外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
实例15
除了将0.1wt%的十甲基环戊硅氧烷(D1890,东京化工)用作环硅氧烷化合物且使用7.1wt%的十二醇酯(伊士曼化学公司)外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
比较例1
除了不使用环硅氧烷化合物且使用7.2wt%的十二醇酯(伊士曼化学公司)外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
比较例2
除了将0.8wt%的聚二甲基硅氧烷(TEGO Glide 410,赢创工业(EvonikIndustries))用作直链硅氧烷替代环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
比较例3
除了将0.8wt%的聚二甲基硅氧烷(TEGO Flow ATF2,赢创工业)用作直链硅氧烷替代环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
比较例4
除了将0.8wt%的八甲基三硅氧烷用作直链硅氧烷替代环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
比较例5
除了将0.8wt%的1,3-二环己基-1,1,3,3-四(二甲基硅烷基氧基)二硅氧烷(52004,西格玛-奥德里奇公司(Sigma-Aldrich Corporation))用作分支链硅氧烷替代环硅氧烷化合物外,用于太阳能电池电极的组合物是以与实例1相同的方式制备。
用于实例和比较例中的每种组分的量展示于表2中(单位:wt%)。
表2
项目 | 有机媒剂 | 溶剂 | 环硅氧烷 | 硅倍半氧烷 | 直链硅氧烷 | 银粉 | 玻璃料 | 分散剂 | 触变剂 |
实例1 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例2 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例3 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例4 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例5 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例6 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例7 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例8 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例9 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例10 | 0.5 | 6.4 | 0.8 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例11 | 0.5 | 6.4 | - | 0.8 | - | 89 | 2.5 | 0.4 | 0.4 |
实例12 | 0.5 | 7.0 | 0.2 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例13 | 0.5 | 5.8 | 1.4 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例14 | 0.5 | 5.2 | 2.0 | - | - | 89 | 2.5 | 0.4 | 0.4 |
实例15 | 0.5 | 7.1 | 0.1 | - | - | 89 | 2.5 | 0.4 | 0.4 |
比较例1 | 0.5 | 7.2 | - | - | - | 89 | 2.5 | 0.4 | 0.4 |
比较例2 | 0.5 | 6.4 | - | - | 0.8 | 89 | 2.5 | 0.4 | 0.4 |
比较例3 | 0.5 | 6.4 | - | - | 0.8 | 89 | 2.5 | 0.4 | 0.4 |
比较例4 | 0.5 | 6.4 | - | - | 0.8 | 89 | 2.5 | 0.4 | 0.4 |
比较例5 | 0.5 | 6.4 | - | - | 0.8 | 89 | 2.5 | 0.4 | 0.4 |
对使用实例和比较例的组合物制造的太阳能电池中的每一个的以下特性的进行评估。结果在表3中示出。
(1)面积变化率
在预定模式(丝网掩模:360个网格,乳胶:15,宽度:35μm)下通过丝网印刷将实例和比较例中制备的用于太阳能电池电极的组合物中的每一种沉积在单晶硅晶片的前表面上以形成电极,随后测量焙烤之前的电极的截面积S0(单位:μm2)。电极具有梯形形状、60μm的最大宽度以及17μm的最大高度。使电极在300℃下干燥40秒且接着在800℃下焙烤60秒,随后测量电极的截面积S1(单位:μm2)。此处,使用3D激光显微镜VK-9700(基恩士公司(KEYENCE Corp.))来测量电极的截面积。使用所获得的S0和S1值根据等式1计算出面积变化率。
(2)电学特性
在预定模式下通过丝网印刷将实例和比较例中制备的用于太阳能电池电极的组合物中的每一种沉积在晶片(多晶片通过以下方式制备:使掺杂有硼(B)的p型晶片的前表面纹理化,形成POCl3的n+层,且在n+层上形成氮化硅(SiNx:H)的防反射膜)的前表面上,随后在IR干燥炉中在300℃到400℃下干燥。接着,将铝浆料印刷在晶片的背表面上且以如上相同的方式干燥。在400℃到900℃的温度下,在带型焙烤炉中,对根据此程序形成的电池进行焙烤60秒,从而制造太阳能电池。使用太阳能电池效率测试器(CT-801,帕山有限公司(Pasan Co.,Ltd.))对制造的太阳能电池的接触电阻(Rc)、串联电阻(Rs)以及开路电压(Voc)进行评估。
表3
项目 | 面积变化率(%) | 接触电阻(Ω) | 串联电阻(Ω) | 开路电压(mV) |
实例1 | 35.79 | 0.98 | 1.76 | 632.28 |
实例2 | 43.58 | 1.00 | 1.18 | 630.66 |
实例3 | 44.19 | 0.61 | 1.88 | 632.67 |
实例4 | 44.97 | 0.21 | 1.14 | 627.95 |
实例5 | 35.22 | 0.19 | 1.60 | 629.58 |
实例6 | 40.83 | 0.79 | 1.51 | 632.02 |
实例7 | 40.91 | 0.97 | 1.49 | 629.85 |
实例8 | 40.16 | 0.90 | 1.52 | 632.32 |
实例9 | 39.87 | 0.75 | 1.82 | 627.90 |
实例10 | 37.77 | 0.92 | 1.31 | 633.39 |
实例11 | 37.89 | 0.68 | 1.73 | 634.57 |
实例12 | 38.08 | 0.99 | 1.85 | 627.50 |
实例13 | 38.38 | 0.55 | 1.78 | 632.67 |
实例14 | 38.32 | 0.84 | 1.62 | 634.30 |
实例15 | 41.36 | 1.00 | 1.48 | 631.51 |
比较例1 | 68.57 | 1.70 | 2.50 | 620.17 |
比较例2 | 66.72 | 1.35 | 2.64 | 619.82 |
比较例3 | 70.56 | 1.57 | 2.76 | 623.34 |
比较例4 | 68.88 | 1.23 | 2.98 | 623.32 |
比较例5 | 74.04 | 1.50 | 2.98 | 620.28 |
如表3所展示,可见根据本发明的包含环硅氧烷化合物和硅倍半氧烷化合物中的至少一种的太阳能电池电极的组合物焙烤之后的电极的如根据等式1计算出的面积变化率低,且因此焙烤之后在用于制造电极时展示出极佳的可加工性和可靠性,同时提供例如接触电阻、串联电阻以及开路电压等极佳的电学特性。
相反,可以看出,不包含环硅氧烷或硅倍半氧烷的比较例1的组合物造成在晶片中印刷时线宽显著增加且面积变化率高,且包含直链或支链硅氧烷化合物而不是环硅氧烷化合物和硅倍半氧烷化合物的比较例2到比较例5的组合物造成在焙烤期间电极收缩显著增加且因此面积变化率高。
应理解,本领域的技术人员可以在不脱离本发明的精神和范围的情况下进行各种修改、变化、更改以及等效实施例。
Claims (10)
1.一种用于太阳能电池电极的组合物,其特征在于,包括:导电粉末;玻璃料;环硅氧烷化合物以及硅倍半氧烷化合物中的至少一种化合物;以及有机媒剂。
2.根据权利要求1所述的用于太阳能电池电极的组合物,其中在所述用于太阳能电池电极的组合物中,所述环硅氧烷化合物以及所述硅倍半氧烷化合物中的所述至少一种化合物以0.1wt%到2wt%的量存在。
3.根据权利要求1所述的用于太阳能电池电极的组合物,其中所述组合物具有如根据等式1计算出的60%或小于60%的面积变化率:
面积变化率=(|S1-S0|/S0)×100
其中S0表示通过印刷所述用于太阳能电池电极的组合物而形成的且不进行干燥以及焙烤的电极的截面积,且S1是在300℃下进行干燥40秒且在800℃下进行焙烤60秒的所述电极的截面积。
4.根据权利要求1所述的用于太阳能电池电极的组合物,其中所述环硅氧烷化合物包括六甲基环三硅氧烷、八甲基环四硅氧烷、十甲基环戊硅氧烷、十二甲基环己硅氧烷、十四甲基环庚硅氧烷、十八甲基环壬硅氧烷、四甲基环四硅氧烷、六苯基环三硅氧烷、四甲基-四乙烯基环四硅氧烷、三(三氟丙基)-三甲基环三硅氧烷、十六甲基环辛硅氧烷、五甲基环戊硅氧烷、六甲基环己硅氧烷、八苯基环四硅氧烷、三苯基环三硅氧烷、四苯基环四硅氧烷、四甲基-四苯基环四硅氧烷、四乙烯基-四苯基环四硅氧烷、六甲基-六乙烯基环己硅氧烷、六甲基-六苯基环己硅氧烷以及六乙烯基-六苯基环己硅氧烷中的至少一种。
5.根据权利要求1所述的用于太阳能电池电极的组合物,其中所述硅倍半氧烷化合物包括八苯基硅倍半氧烷、八甲基硅倍半氧烷以及八乙烯基硅倍半氧烷中的至少一种。
6.根据权利要求1所述的用于太阳能电池电极的组合物,其中所述玻璃料包括铋碲氧化物基玻璃料。
7.根据权利要求6所述的用于太阳能电池电极的组合物,其中所述铋碲氧化物基玻璃料还包括锂、锌、磷、锗、镓、铈、铁、硅、钨、镁、铯、锶、钼、钛、锡、铟、钒、钡、镍、铜、钠、钾、砷、钴、锆以及锰金属中的至少一种元素。
8.根据权利要求1所述的用于太阳能电池电极的组合物,包括:
60wt%到95wt%的所述导电粉末;
0.1wt%到2wt%的选自所述环硅氧烷化合物以及所述硅倍半氧烷化合物中的所述至少一种化合物;
0.1wt%到20wt%的所述玻璃料;以及
1wt%到30wt%的所述有机媒剂。
9.根据权利要求1所述的用于太阳能电池电极的组合物,还包括分散剂、触变剂、塑化剂、粘度稳定剂、消泡剂、颜料、UV稳定剂、抗氧化剂以及偶合剂中的至少一种添加剂。
10.一种电极,其特征在于,由根据权利要求1到权利要求9中任一项所述的用于太阳能电池电极的组合物形成。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170017907A KR102008186B1 (ko) | 2017-02-09 | 2017-02-09 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
KR10-2017-0017907 | 2017-02-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108417289A true CN108417289A (zh) | 2018-08-17 |
CN108417289B CN108417289B (zh) | 2020-11-17 |
Family
ID=63038005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810051191.2A Active CN108417289B (zh) | 2017-02-09 | 2018-01-18 | 用于形成太阳能电池电极的组合物和使用其制备的电极 |
Country Status (4)
Country | Link |
---|---|
US (2) | US10665733B2 (zh) |
KR (1) | KR102008186B1 (zh) |
CN (1) | CN108417289B (zh) |
TW (1) | TWI665209B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111354502A (zh) * | 2018-12-21 | 2020-06-30 | 三星Sdi株式会社 | 用于形成太阳能电池电极的组合物及太阳能电池电极 |
CN113035408A (zh) * | 2020-03-17 | 2021-06-25 | 深圳市百柔新材料技术有限公司 | 太阳能电池栅线浆料及其制备方法,太阳能电池 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201230068A (en) * | 2010-12-16 | 2012-07-16 | Du Pont | Aluminum paste compositions comprising siloxanes and their use in manufacturing solar cells |
CN102732150A (zh) * | 2011-03-30 | 2012-10-17 | 三菱综合材料株式会社 | 用于太阳能电池的透明导电膜用组合物和透明导电膜 |
US20130165611A1 (en) * | 2007-04-17 | 2013-06-27 | Kaneka Corporation | Polyhedral polysiloxane modified product and composition using the modified product |
CN104575677A (zh) * | 2014-12-23 | 2015-04-29 | 合肥中南光电有限公司 | 一种滤波器用导电银浆 |
CN105741905A (zh) * | 2014-12-30 | 2016-07-06 | 三星Sdi株式会社 | 用于太阳能电池电极的组合物和使用其制备的太阳能电池电极 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5666775B2 (ja) * | 2006-07-21 | 2015-02-12 | 株式会社カネカ | ポリシロキサン系組成物およびそれから得られる成形体、オプトデバイス部材 |
US8535761B2 (en) * | 2009-02-13 | 2013-09-17 | Mayaterials, Inc. | Silsesquioxane derived hard, hydrophobic and thermally stable thin films and coatings for tailorable protective and multi-structured surfaces and interfaces |
US20110232758A1 (en) * | 2010-03-25 | 2011-09-29 | Rohm And Haas Electronic Materials Llc | Thin film photovoltaic cell |
CN101937933A (zh) * | 2010-09-15 | 2011-01-05 | 陕西华达电磁屏蔽技术有限公司 | 一种高粘度太阳能电池背面电极银铝浆及其制备方法 |
TWI435454B (zh) * | 2010-10-25 | 2014-04-21 | Au Optronics Corp | 太陽能電池 |
US9373734B1 (en) * | 2011-11-02 | 2016-06-21 | Lockheed Martin Corporation | High-efficiency solar energy device |
CN102646484B (zh) * | 2012-04-19 | 2013-08-21 | 南京理工大学常熟研究院有限公司 | 一种硅基薄膜太阳能电池用导电银铝浆的制备方法 |
WO2014125964A1 (ja) * | 2013-02-14 | 2014-08-21 | 株式会社ダイセル | 硬化性樹脂組成物、硬化物、封止材、及び半導体装置 |
US9525082B2 (en) * | 2013-09-27 | 2016-12-20 | Sunpower Corporation | Solar cell contact structures formed from metal paste |
JP6030587B2 (ja) | 2014-01-31 | 2016-11-24 | 信越化学工業株式会社 | 太陽電池セルの製造方法 |
KR20160012093A (ko) * | 2014-07-23 | 2016-02-02 | 대주전자재료 주식회사 | 소결 억제제를 포함하는 태양전지 전극용 전도성 페이스트 |
TWI576863B (zh) * | 2014-12-08 | 2017-04-01 | 碩禾電子材料股份有限公司 | 一種含無鉛玻璃熔塊之導電漿(一) |
-
2017
- 2017-02-09 KR KR1020170017907A patent/KR102008186B1/ko active IP Right Grant
- 2017-12-29 US US15/857,965 patent/US10665733B2/en active Active
-
2018
- 2018-01-18 CN CN201810051191.2A patent/CN108417289B/zh active Active
- 2018-01-26 TW TW107102963A patent/TWI665209B/zh active
-
2020
- 2020-05-06 US US16/867,671 patent/US20200266308A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130165611A1 (en) * | 2007-04-17 | 2013-06-27 | Kaneka Corporation | Polyhedral polysiloxane modified product and composition using the modified product |
TW201230068A (en) * | 2010-12-16 | 2012-07-16 | Du Pont | Aluminum paste compositions comprising siloxanes and their use in manufacturing solar cells |
CN102732150A (zh) * | 2011-03-30 | 2012-10-17 | 三菱综合材料株式会社 | 用于太阳能电池的透明导电膜用组合物和透明导电膜 |
CN104575677A (zh) * | 2014-12-23 | 2015-04-29 | 合肥中南光电有限公司 | 一种滤波器用导电银浆 |
CN105741905A (zh) * | 2014-12-30 | 2016-07-06 | 三星Sdi株式会社 | 用于太阳能电池电极的组合物和使用其制备的太阳能电池电极 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111354502A (zh) * | 2018-12-21 | 2020-06-30 | 三星Sdi株式会社 | 用于形成太阳能电池电极的组合物及太阳能电池电极 |
CN111354502B (zh) * | 2018-12-21 | 2021-12-10 | 常州聚和新材料股份有限公司 | 用于形成太阳能电池电极的组合物及太阳能电池电极 |
CN113035408A (zh) * | 2020-03-17 | 2021-06-25 | 深圳市百柔新材料技术有限公司 | 太阳能电池栅线浆料及其制备方法,太阳能电池 |
CN113035408B (zh) * | 2020-03-17 | 2024-02-02 | 深圳市百柔新材料技术有限公司 | 太阳能电池栅线浆料及其制备方法,太阳能电池 |
Also Published As
Publication number | Publication date |
---|---|
US20180226525A1 (en) | 2018-08-09 |
US20200266308A1 (en) | 2020-08-20 |
TWI665209B (zh) | 2019-07-11 |
TW201829434A (zh) | 2018-08-16 |
US10665733B2 (en) | 2020-05-26 |
KR102008186B1 (ko) | 2019-08-07 |
KR20180092365A (ko) | 2018-08-20 |
CN108417289B (zh) | 2020-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9997648B2 (en) | Composition for solar cell electrode and electrode prepared using the same | |
KR20140119248A (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
KR101716525B1 (ko) | 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극 | |
TWI651289B (zh) | 用於太陽電池電極的組合物以及使用其製作的電極 | |
CN105374887A (zh) | 太阳电池 | |
CN108417289A (zh) | 用于形成太阳能电池电极的组合物和使用其制备的电极 | |
TWI684289B (zh) | 太陽能電池 | |
KR101590224B1 (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
JP2016210962A (ja) | 電極形成用組成物ならびにこれを用いて製造された電極および太陽電池 | |
CN109904242A (zh) | 太阳能电池 | |
KR20190067667A (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
KR101940170B1 (ko) | 전극 형성용 조성물 및 이로부터 제조된 전극과 태양전지 | |
KR20140119249A (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
KR101566071B1 (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
CN109935641B (zh) | 用于形成太阳能电池电极的组成物和使用其制备的电极 | |
KR101835921B1 (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 | |
TWI741393B (zh) | 用於形成基於dsw的太陽能電池電極的組合物以及使用所述組合物製備的基於dsw的太陽能電池電極 | |
CN107919401A (zh) | 用于太阳能电池电极的组合物及使用此组合物制造的电极 | |
CN110797134B (zh) | 用于太阳能电池电极的组合物以及太阳能电池 | |
TWI681410B (zh) | 用於太陽電池電極的組成物及使用其製備的太陽電池電極 | |
KR20190066157A (ko) | 태양전지 | |
KR20150019404A (ko) | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210315 Address after: 88 Xinzhu 2nd Road, Xinbei District, Changzhou City, Jiangsu Province Patentee after: CHANGZHOU JUHE NEW MATERIAL Co.,Ltd. Address before: South Korea Gyeonggi Do Yongin Giheung tribute District Road No. 150-20 Patentee before: Samsung SDI Co.,Ltd. |
|
TR01 | Transfer of patent right |