CN108400178B - 一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池 - Google Patents
一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池 Download PDFInfo
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Abstract
本发明公开了一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池。其包括衬底层、层间组分递变的交叉排布层堆叠纳米线薄膜、层间组分递变的交叉排布层堆叠纳米线薄膜的一侧设有L型金属金电极，另一侧设有L型金属钛电极。层间组分递变的交叉排布层堆叠纳米线薄膜包括N层CdxZn1‑xTe/CdS核壳结构纳米线，相邻层CdxZn1‑xTe/CdS核壳结构纳米线从下至上组分递变且它们之间设有透明介电层。本发明所涉及层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，能够实现高能量光子被上层材料吸收，低能量光子被下层材料吸收，提高了纳米线水平阵列太阳光利用率。
Description
技术领域：
本发明设计太阳能电池领域，特别是涉及一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池。
背景技术：
半导体纳米线具有结晶质量好、光利用率高、耗材少、设计灵活等优点。基于半导体纳米线的光伏器件的研究，如：纳米线核壳结构、纳米线径向p-i-n结构、纳米线十字交叉结构太阳能电池等，近年来取得了长足的进步。单根纳米线太阳能电池由于实际输出功率小，大多数是被当作纳米集成系统里的供能单元或者是用于指导材料制备或者器件构筑的原型器件。阵列结构纳米太阳能电池既可以保有单个器件的优异性质又可以实现大的功率输出，成为近年来的研究热点。目前，大多数研究者将目光聚焦在纳米线的竖直阵列结构，而此类结构的制备往往需要额外的生长辅助模板或者条件苛刻的外延衬底。而基于纳米线的水平阵列结构则可依据自下至上的制备方法，实现器件衬底以及纳米材料在种类、组分、掺杂、形貌上的灵活选择。此特点不但可以弱化材料合成条件的限制，还可以丰富器件的构筑手段，如：可先通过研究单根原型器件性能以优化尺寸、组分、掺杂、表/界面缺陷等材料参数，然后再设计优化阵列堆叠方式、堆叠层数、纳米线组合形式等器件因素。但是，目前对于纳米线水平排布阵列光伏器件的研究还存在诸多不足之处，如此类结构的平面利用率较差、组装步骤复杂且效率低等。
发明内容：
本发明针对现有技术的不足，提出了一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，旨在克服传统纳米线竖直阵列太阳能电池制备困难的问题，获得能具有高太阳光平面利用率纳米线水平阵列太阳能电池。
为了实现上述目的，本发明提出了一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：包括一层衬底层(1)，所述衬底层(1)上设有层间组分递变的交叉排布层堆叠纳米线薄膜(2)，所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)的一侧设有L型金属金电极(3)，所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)的另一侧设有L型金属钛电极(4)。
作为优选，其特征在于：所述衬底层(1)为下部设有银背反层的石英玻璃、二氧化硅/硅。
作为优选，其特征在于：所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)包括N层CdxZn1-xTe/CdS核壳结构纳米线，相邻层CdxZn1-xTe/CdS核壳结构纳米线之间设有透明介电层，相邻层CdxZn1-xTe/CdS核壳结构纳米线交叉排布，相邻层CdxZn1-xTe/CdS核壳结构纳米线中的CdxZn1-xTe核组分递变。
作为优选，其特征在于：所述CdxZn1-xTe/CdS核壳结构纳米线中x为Cd原子数量与Cd和Zn原子数量总和的比值，x的取值范围为0＜x＜1，所述CdxZn1-xTe/CdS核壳结构纳米线的长度为250-300μm，所述CdxZn1-xTe/CdS核壳结构纳米线的CdxZn1-xTe核的直径为150-200nm，所述CdxZn1-xTe/CdS核壳结构纳米线的CdS壳层厚度为30-70nm，所述CdxZn1-xTe/CdS核壳结构纳米线一端的CdxZn1-xTe核裸露且裸露长度为50-100μm。
作为优选，其特征在于：所述N层CdxZn1-xTe/CdS核壳结构纳米线，N的取值为3、4、5，每一层中CdxZn1-xTe/CdS核壳结构纳米线平行排布，每一层中CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致。
作为优选，其特征在于：所述透明介电层为三氧化二铝、二氧化铪，所述透明介电层厚度为20-40nm。
作为优选，其特征在于：相邻层CdxZn1-xTe/CdS核壳结构纳米线交叉排布，相邻层的交叉角度为80-100度，相隔层CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致。
作为优选，其特征在于：相邻层CdxZn1-xTe/CdS核壳结构纳米线中的CdxZn1-xTe核组分递变，具体的：
(a)N取值为3时，从下至上的顺序，第1层CdxZn1-xTe/CdS核壳结构纳米线中0.7＜x＜1，第2层CdxZn1-xTe/CdS核壳结构纳米线中0.3＜x＜0.7，第3层CdxZn1-xTe/CdS核壳结构纳米线中0＜x＜0.3；
(b)N取值为4时，从下至上的顺序，第1层CdxZn1-xTe/CdS核壳结构纳米线中0.8＜x＜1，第2层CdxZn1-xTe/CdS核壳结构纳米线中0.6＜x＜0.8，第3层CdxZn1-xTe/CdS核壳结构纳米线中0.3＜x＜0.6，第4层CdxZn1-xTe/CdS核壳结构纳米线中0＜x＜0.3；
(c)N取值为5时，从下至上的顺序，第1层CdxZn1-xTe/CdS核壳结构纳米线中0.8＜x＜1，第2层CdxZn1-xTe/CdS核壳结构纳米线中0.6＜x＜0.8，第3层CdxZn1-xTe/CdS核壳结构纳米线中0.4＜x＜0.6，第4层CdxZn1-xTe/CdS核壳结构纳米线中0.2＜x＜0.4，第5层CdxZn1- xTe/CdS核壳结构纳米线中0＜x＜0.2。
作为优选，其特征在于：所述L型金属金电极(3)与每一层CdxZn1-xTe/CdS核壳结构纳米线裸露的CdxZn1-xTe核形成欧姆接触，并对所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)形成半包围。
作为优选，其特征在于：所述L型金属钛电极(4)与每一层CdxZn1-xTe/CdS核壳结构纳米线无裸露CdxZn1-xTe核一端的CdS壳层形成欧姆接触，并对所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)形成半包围。与现有技术相比，本发明具有以下有益结果：
1.本发明中，采用层间组分递变的交叉排布层堆叠纳米线薄膜构筑纳米太阳能电池，设计自下而上不同层组分递变的组合方式，实现高能量光子被上层材料吸收，低能量光子被下层材料吸收，提高纳米线水平阵列太阳光利用率。
2.本发明中，采用CdxZn1-xTe/CdS核壳结构纳米线作为纳米太阳能电池的光伏材料，CdxZn1-xTe能实现在1.5-2.24eV之间的依赖于组分的带隙连续可调，这覆盖了大部分太阳光频率范围，可满足层电池在带隙匹配上的要求。
附图说明：
图1是本发明的剖面结构示意图。
图2是本发明的俯视结构示意图。
具体实施方式：
参考图1和图2，本发明包括一层衬底层(1)，所述衬底层(1)上设有层间组分递变的交叉排布层堆叠纳米线薄膜(2)，所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)的一侧设有L型金属金电极(3)，所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)的另一侧设有L型金属钛电极(4)。
以下给出三个实施例：
实施例1，
衬底层为设有银背反层的石英玻璃，层间组分递变的交叉排布层堆叠纳米线薄膜包括3层CdxZn1-xTe/CdS核壳结构纳米线，相邻层CdxZn1-xTe/CdS核壳结构纳米线之间设有厚度为20nm的三氧化二铝；所用CdxZn1-xTe/CdS核壳结构纳米线的长度为250μm，CdxZn1-xTe/CdS核壳结构纳米线的CdxZn1-xTe核的直径为150nm，CdS壳层厚度为30nm，CdxZn1-xTe/CdS核壳结构纳米线一端的CdxZn1-xTe核裸露且裸露长度为50μm；每一层中CdxZn1-xTe/CdS核壳结构纳米线平行排布，每一层中CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致；相邻层CdxZn1-xTe/CdS核壳结构纳米线的交叉角度为80-100度，相隔层CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致；相邻层CdxZn1-xTe/CdS核壳结构纳米线中的CdxZn1-xTe核组分递变，具体为：从下至上的顺序，第1层CdxZn1-xTe/CdS核壳结构纳米线中0.7＜x＜1，第2层CdxZn1-xTe/CdS核壳结构纳米线中0.3＜x＜0.7，第3层CdxZn1-xTe/CdS核壳结构纳米线中0＜x＜0.3；L型金属金电极与每一层CdxZn1-xTe/CdS核壳结构纳米线裸露的CdxZn1-xTe核形成欧姆接触，并对层间组分递变的交叉排布层堆叠纳米线薄膜形成半包围；L型金属钛电极与每一层CdxZn1-xTe/CdS核壳结构纳米线无裸露CdxZn1-xTe核一端的CdS壳层形成欧姆接触，并对层间组分递变的交叉排布层堆叠纳米线薄膜形成半包围。
实施例2，
衬底层为二氧化硅/硅，层间组分递变的交叉排布层堆叠纳米线薄膜包括4层CdxZn1-xTe/CdS核壳结构纳米线，相邻层CdxZn1-xTe/CdS核壳结构纳米线之间设有厚度为30nm的二氧化铪；所用CdxZn1-xTe/CdS核壳结构纳米线的长度为280μm，CdxZn1-xTe/CdS核壳结构纳米线的CdxZn1-xTe核的直径为170nm，CdS壳层厚度为50nm，CdxZn1-xTe/CdS核壳结构纳米线一端的CdxZn1-xTe核裸露且裸露长度为75μm；每一层中CdxZn1-xTe/CdS核壳结构纳米线平行排布，每一层中CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致；相邻层CdxZn1-xTe/CdS核壳结构纳米线的交叉角度为80-100度，相隔层CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致；相邻层CdxZn1-xTe/CdS核壳结构纳米线中的CdxZn1-xTe核组分递变，具体为：从下至上的顺序，第1层CdxZn1-xTe/CdS核壳结构纳米线中0.8＜x＜1，第2层CdxZn1-xTe/CdS核壳结构纳米线中0.6＜x＜0.8，第3层CdxZn1-xTe/CdS核壳结构纳米线中0.3＜x＜0.6，第4层CdxZn1-xTe/CdS核壳结构纳米线中0＜x＜0.3；L型金属金电极与每一层CdxZn1-xTe/CdS核壳结构纳米线裸露的CdxZn1-xTe核形成欧姆接触，并对层间组分递变的交叉排布层堆叠纳米线薄膜形成半包围；L型金属钛电极与每一层CdxZn1-xTe/CdS核壳结构纳米线无裸露CdxZn1-xTe核一端的CdS壳层形成欧姆接触，并对层间组分递变的交叉排布层堆叠纳米线薄膜形成半包围。
实施例3，
衬底层为设有银背反层的石英玻璃，层间组分递变的交叉排布层堆叠纳米线薄膜包括5层CdxZn1-xTe/CdS核壳结构纳米线，相邻层CdxZn1-xTe/CdS核壳结构纳米线之间设有厚度为40nm的二氧化铪；所用CdxZn1-xTe/CdS核壳结构纳米线的长度为300μm，CdxZn1-xTe/CdS核壳结构纳米线的CdxZn1-xTe核的直径为200nm，CdS壳层厚度为70nm，CdxZn1-xTe/CdS核壳结构纳米线一端的CdxZn1-xTe核裸露且裸露长度为100μm；每一层中CdxZn1-xTe/CdS核壳结构纳米线平行排布，每一层中CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致；相邻层CdxZn1-xTe/CdS核壳结构纳米线的交叉角度为80-100度，相隔层CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致；相邻层CdxZn1-xTe/CdS核壳结构纳米线中的CdxZn1-xTe核组分递变，具体为：从`至上的顺序，第1层CdxZn1-xTe/CdS核壳结构纳米线中0.8＜x＜1，第2层CdxZn1-xTe/CdS核壳结构纳米线中0.6＜x＜0.8，第3层CdxZn1-xTe/CdS核壳结构纳米线中0.4＜x＜0.6，第4层CdxZn1-xTe/CdS核壳结构纳米线中0.2＜x＜0.4，第5层CdxZn1-xTe/CdS核壳结构纳米线中0＜x＜0.2；L型金属金电极与每一层CdxZn1-xTe/CdS核壳结构纳米线裸露的CdxZn1-xTe核形成欧姆接触，并对层间组分递变的交叉排布层堆叠纳米线薄膜形成半包围；L型金属钛电极与每一层CdxZn1-xTe/CdS核壳结构纳米线无裸露CdxZn1- xTe核一端的CdS壳层形成欧姆接触，并对层间组分递变的交叉排布层堆叠纳米线薄膜形成半包围。
Claims (10)
1.一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：包括一层衬底层(1)，所述衬底层(1)上设有层间组分递变的交叉排布层堆叠纳米线薄膜(2)，所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)包括N层CdxZn1-xTe/CdS核壳结构纳米线；所述CdxZn1-xTe/CdS核壳结构纳米线中x为Cd原子数量与Cd和Zn原子数量总和的比值，x的取值范围为0＜x＜1；所述N层CdxZn1-xTe/CdS核壳结构纳米线为自下而上交叉排布的不同层的组分递减的组合方式，即x的取值递减的组合方式；所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)的一侧设有L型金属金电极(3)，所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)的另一侧设有L型金属钛电极(4)。
2.根据权利要求1所述的一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：所述衬底层(1)为下部设有银背反层的石英玻璃、二氧化硅/硅。
3.根据权利要求1所述的一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：相邻层CdxZn1-xTe/CdS核壳结构纳米线之间设有透明介电层，相邻层CdxZn1-xTe/CdS核壳结构纳米线交叉排布，相邻层CdxZn1-xTe/CdS核壳结构纳米线中的CdxZn1-xTe核组分递变。
4.根据权利要求3所述的一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：所述CdxZn1-xTe/CdS核壳结构纳米线的长度为250-300μm，所述CdxZn1-xTe/CdS核壳结构纳米线的CdxZn1-xTe核的直径为150-200nm，所述CdxZn1-xTe/CdS核壳结构纳米线的CdS壳层厚度为30-70nm，所述CdxZn1-xTe/CdS核壳结构纳米线一端的CdxZn1-xTe核裸露且裸露长度为50-100μm。
5.根据权利要求3所述的一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：所述N层CdxZn1-xTe/CdS核壳结构纳米线，N的取值为3、4、5，每一层中CdxZn1-xTe/CdS核壳结构纳米线平行排布，每一层中CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致。
6.根据权利要求3所述的一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：所述透明介电层为三氧化二铝、二氧化铪，所述透明介电层厚度为20-40nm。
7.根据权利要求3所述的一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：相邻层CdxZn1-xTe/CdS核壳结构纳米线交叉排布，相邻层的交叉角度为80-100度，相隔层CdxZn1-xTe/CdS核壳结构纳米线裸露CdxZn1-xTe核的一端朝向一致。
8.根据权利要求3所述的一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：相邻层CdxZn1-xTe/CdS核壳结构纳米线中的CdxZn1-xTe核组分递变，具体的：
(a)N取值为3时，从下至上的顺序，第1层CdxZn1-xTe/CdS核壳结构纳米线中0.7＜x＜1，第2层CdxZn1-xTe/CdS核壳结构纳米线中0.3＜x＜0.7，第3层CdxZn1-xTe/CdS核壳结构纳米线中0＜x＜0.3；
(b)N取值为4时，从下至上的顺序，第1层CdxZn1-xTe/CdS核壳结构纳米线中0.8＜x＜1，第2层CdxZn1-xTe/CdS核壳结构纳米线中0.6＜x＜0.8，第3层CdxZn1-xTe/CdS核壳结构纳米线中0.3＜x＜0.6，第4层CdxZn1-xTe/CdS核壳结构纳米线中0＜x＜0.3；
(c)N取值为5时，从下至上的顺序，第1层CdxZn1-xTe/CdS核壳结构纳米线中0.8＜x＜1，第2层CdxZn1-xTe/CdS核壳结构纳米线中0.6＜x＜0.8，第3层CdxZn1-xTe/CdS核壳结构纳米线中0.4＜x＜0.6，第4层CdxZn1-xTe/CdS核壳结构纳米线中0.2＜x＜0.4，第5层CdxZn1-xTe/CdS核壳结构纳米线中0＜x＜0.2。
9.根据权利要求1所述的一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：所述L型金属金电极(3)与每一层CdxZn1-xTe/CdS核壳结构纳米线裸露的CdxZn1-xTe核形成欧姆接触，并对所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)形成半包围。
10.根据权利要求1所述的一种层间组分递变的交叉排布层堆叠纳米线薄膜太阳能电池，其特征在于：所述L型金属钛电极(4)与每一层CdxZn1-xTe/CdS核壳结构纳米线无裸露CdxZn1-xTe核一端的CdS壳层形成欧姆接触，并对所述层间组分递变的交叉排布层堆叠纳米线薄膜(2)形成半包围。
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