CN108388078A - The defect correcting method of phase shifting mask - Google Patents
The defect correcting method of phase shifting mask Download PDFInfo
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- CN108388078A CN108388078A CN201810100694.4A CN201810100694A CN108388078A CN 108388078 A CN108388078 A CN 108388078A CN 201810100694 A CN201810100694 A CN 201810100694A CN 108388078 A CN108388078 A CN 108388078A
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- defect
- pattern
- photomask
- defect portion
- phase shift
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The present invention provides a kind of defect correcting method of phase shifting mask, it is characterised in that includes the following steps：First step (S1) measures the positions and dimensions in defect portion for the photomask base plate on the transparent substrate with pattern formed by phase shift film, comprising defect portion；Second step (S2) judges whether the size in the defect portion on the phase shift film is 1.0 μm of 1.0 μ m or more；And third step (P2) accumulates photomask in the case where the judging result is "No" in the defect portion.
Description
Technical field
The invention mainly relates to the manufacture to flat display devices repaiied using the defect generated in phase shifting mask
Positive method, the modified photomask for having carried out defect.
Background technology
Phase shifting mask (PSM) is the photomask that resolution ratio is improved by phase offset effect.In general, phase shifting mask institute
The phase shift film used is that transmissivity is the left and right 1~10 [%] and has the effect of making the semi-permeable membrane of phasing back (or offset).
Following technology is had been established at present：In general, the pattern of photomask is simply formed on transparent glass substrate and
At so-called binary mask in the case of, it is by laser ablation (laser zapping) that the region comprising defect is locally whole
Shape removal (finishing (trimming)), and by optical cvd method etc. in the position that photomask shaping removes or the defect portion of pattern
(hereinafter, the defect portion of pattern is known as white defect sometimes) locally accumulates photomask.It can be with higher by above-mentioned technology
Positional precision carries out amendment corresponding with the size of defect and type.
Patent Document 1 discloses the defect correcting methods of following phase-shift photomask：With light-shielding pattern, phase shifter
In the defect correcting method of the phase-shift photomask of pattern, which is characterized in that for light shield layer and phase shift layer defined
After forming pattern at position, selectively accumulated at the lack part of phase shifter pattern by using the optical cvd method of laser
SiO2Film.Patent Document 2 discloses the defect correcting methods of gray mask.
Existing technical literature
Patent document
【Patent document 1】Japanese Unexamined Patent Publication 2009-020312
【Patent document 2】Japanese Unexamined Patent Publication 2008-216346
【Patent document 3】Japanese Unexamined Patent Publication 2014-074827
Invention content
Technical problems to be solved by the inivention
But applied to flat display devices phase shifting mask with film thickness to transmissivity and phase pushing figure this 2
Parameter carries out the film that control this respect is special, is the film that can not be replaced originally.In the experiment of the present application person, for
Disconnection defect (2.0 μ ms 4.0 of 2.0 μm of wide line patterns shown in the optical reflection picture of the photomask of (A) of correction map 10
μm) and after accumulating the photomask of identical size by optical cvd method, shown in the SEM pictures after being exposed as shown in (B) of Figure 10, repair
Line width at positive part locally attenuates, i.e., could not normally be corrected.In other experiments for replacing photomask with phase shift film,
Line width further attenuates.This indicates that the amendment of phase shift film is extremely difficult.
That is, even if by laser ablation accurately carried out rejected region shaping removal, but with accurate position essence
Phase shift film of the accumulation with phase difference and the identical optical characteristics of the film of transmissivity and surrounding is also pole to degree at this location
Its difficulty.
Caused by the difference of phase shift film and the stacking method of defect correction film.That is, this is because phase
Potential difference is controlled by film thickness, and still, phase shift film is different with the stacking method of defect correction film, closely says, forms
Difference, therefore even if make to be not necessarily the same if film thickness identical phase difference.
Moreover, in the case where the different film of optical characteristics to be deposited in the defect portion of pattern, it can be in the phase shift film of surrounding
With the difference for being formed in the interference effect for generating light between the accumulating film at defect part, it is easy to be formed by exposing by transferring
Pattern in generate pattern formed it is bad.
In view of the above subject, it is a primary object of the present invention to provide best lack according to the size of defect and classification
Fall into modification method.
The means used to solve the problem
The defect correcting method of the 1st phase shifting mask of the present invention is characterised by comprising following steps：First step, needle
To having the photomask base plate of pattern formed by phase shift film, comprising defect portion on the transparent substrate, the position in defect portion is measured
It sets and size；Second step judges whether the size in the defect portion on the phase shift film is 1.0 μm of 1.0 μ m or more；With
And third step, the result judged as "No" in the case of, in the defect portion accumulation fill the defect portion
Photomask.
The defect correcting method of the 2nd phase shifting mask of the present invention is characterised by comprising following steps：First step, needle
To having the photomask base plate of pattern formed by phase shift film, comprising defect portion on the transparent substrate, the position in defect portion is measured
It sets and size；Second step judges whether the size in the defect portion on the phase shift film is 1.0 μm of 1.0 μ m or more；With
And third step further determines whether to break in the case where the judging result of the second step is "Yes",
In the case where the judging result of the third step is "No", comprise the steps of：
Four steps, by shading membrane stack in a manner of Chong Die with the patterned sides edge adjacent with the defect portion of phase shift film
Product is rectangular shape；And
5th step, so that the patterned sides edge of the non-broken string side for covering the defect portion in the photomask accumulated
Side be retained and position that the other side remains into covering defect portion until mode, by the screening around the defect portion
Light film shaping removal is rectangular shape,
It is 1.0 μm or less to make the size of the width of the overlapping.
The defect correcting method of the 3rd phase shifting mask of the present invention is characterised by comprising following steps：First step, needle
To having the photomask base plate of pattern formed by phase shift film, comprising white defect on the transparent substrate, the position of white defect is measured
It sets and size；Second step judges whether the flaw size on the phase shift film is 1.0 μm of 1.0 μ m or more；And third step
Suddenly, it in the case where the judging result of the second step is "Yes", further determines whether to break,
In the case where the judging result of the third step is "Yes", comprise the steps of：
Four steps accumulates photomask in following region, which includes the whole in the defect portion, and with it is described
The edge part overlapping adjacent with the defect portion of phase shift film；And
5th step relative to the error of the pattern width before amendment is 0.1 μm ± 0.1 μm according to the pattern width
Mode carries out shaping removal to the photomask,
It is 1.0 μm or less to make the size of the width of the overlapping.
The defect correcting method of the 1st~the 3rd above-mentioned phase shifting mask mainly directly to form phase shift film on the transparent substrate
Pattern photomask premised on, still, can also be applied for following " edge enhancement type phase shifting mask " (patent document 3)
The defect correcting method of the present invention is somebody's turn to do " edge enhancement type phase shifting mask " and is formed with the pattern of photomask on the transparent substrate,
On the pattern of the photomask, the especially accumulations such as patterned sides edge have phase shift film.
The effect of invention
According to the present invention, defect correction can be also carried out for the phase shifting mask for being difficult to carry out defect correction originally.
Description of the drawings
The flow chart for the step of Fig. 1 is the defect correcting method for the phase shifting mask for showing the 1st embodiment.
Fig. 2 is to show that the formation of the 1st embodiment has the vertical view and sectional view of the phase shifting mask of the situation of needle pore defect.
Fig. 3 is the vertical view of the phase shifting mask for the situation for showing that the amendment of the needle pore defect of the 1st embodiment is completed and cuts open
View.
Fig. 4 is to show that the formation of the 1st embodiment has vertical view and the amplification of the phase shifting mask of the situation of non-disconnection defect
Vertical view.
Fig. 5 be show the 1st embodiment non-disconnection defect amendment complete situation phase shifting mask vertical view and
Enlarged plan view.
Fig. 6 is to show that the formation of the 1st embodiment has the vertical view of the phase shifting mask of the situation of disconnection defect and amplification to bow
View.
Fig. 7 is the enlarged plan view of the phase shifting mask for the situation for showing that the amendment of the disconnection defect of the 1st embodiment is completed.
Fig. 8 is optical reflection picture and the exposure of the phase shifting mask for the situation for showing that the amendment of the defect of the 1st embodiment is completed
Pattern (needle pore defect after light：A, B, non-disconnection defect：C、D).
Fig. 9 is the optical reflection picture of the phase shifting mask for the situation for showing that the amendment of the disconnection defect of the 1st embodiment is completed
(the insufficient situation of overlapping：A is overlapped excessive situation：B)
Figure 10 is optical reflection picture and the exposure of the phase shifting mask in the case of having modified disconnection defect by existing method
Pattern afterwards.
Label declaration
11 transparent substrates；12 phase shift films；D1 needle pore defects (1.0 1.0 μm of μ m white defect below)；D2 is non-, and broken string lacks
It falls into；D3 disconnection defects；The width of O (O1~O4) overlappings；The difference of the design value of Δ t and pattern width
Specific implementation mode
Hereinafter, the embodiments of the present invention will be described with reference to the drawings.But the following embodiments and the accompanying drawings is not in this hair
Limited explanation is provided in the identification of bright purport.In addition, identical reference numeral is marked to component identical or of the same race sometimes,
It omits the description.
(the 1st embodiment)
The basic ideas (amendment of single layer PSM) of the present invention
The flow chart for the step of Fig. 1 is the defect correction for the phase shifting mask for showing the 1st embodiment of the present invention.Do not having
In the case of especially explicitly pointing out, defect correction of the invention refers to the amendment of white defect.But for convenience of description, it is contemplated that
Phase shifting mask is illustrated the case where form the pattern of single layer phase shift film on the transparent substrate, in the 2nd embodiment
Illustrate the complicated phase shift film of multilayered structure.
1. the amendment (the 1st modification method) about needle pore defect
In the case where being modified to needle pore defect, first, by using check machine to as the photomask base plate of object
Carry out the measurement (step S1) of the positions and dimensions in defect portion.Next, it is determined that the size in the defect portion on the phase shift film
Whether it is 1.0 μm of 1.0 μ m or more (step S2).Its judging result is "No", i.e. the size in defect portion is specified value or less
In the case of, as 1 (P1) of processing, it can determine the means of position and film forming above defect portion to fill out by optical cvd method etc.
The mode for filling the defect portion accumulates the photomask of substantially the same size.
Here, the judging result of step S2 is "No" it is meant that the defect portion formed on the pattern formed by phase shift film
The case where being known as the small white defect of so-called needle pore defect.In this case, the influence to exposure originally is slight,
But it handles progress shaping removal (finishing) by laser ablation around comprising defect then instead to generate not optical characteristics
Good influence.Therefore, executed without finishing directly defect portion accumulate photomask step P1, then, as needed only into
The removal of row film forming residue.Although as a result, the small white defect formed on the pattern formed by phase shift film is by film thickness
Larger photomask covering, but if being the influence that the size does not have that interference effect is brought then substantially, that is, use photomask into
Row replaces and is inserted the defect portion of phase shift film, will not also be had an impact substantially to exposure.
Need not form a film the removal of residue in the amendment of needle pore defect.But as described later, if it is " having with edge
The defect of pass " needs finishing process in order to consistent with the edge of surrounding.
Photomask used herein, as long as 3.0 or more optical density (OD), as an example, preferred chromium film, but it is unlimited
Can also be other materials as long as the condition for meeting optical density (OD) in this.In addition, being selected in the region office comprising defect portion
When the photomask to form a film to portion, it is not easy remaining residue when being evapotranspired in the laser ablation processing of preferably appropriate selection behind
Material.
In addition, about " substantially will not to exposure have an impact ", should premised on the wavelength and target line width that expose light into
Row discuss, in the present invention, substantially by g lines, h lines, i lines (ultraviolet light of wavelength 365 [nm]~436 [nm]) mixed light or
The exposure light being made of monochromatic light as premise, and using formed 2 μm~3 μm or so minimum feature pattern as premise.
Under the premise of being somebody's turn to do, size is that 1.0 μ m, 1.0 μm of needle pore defects below have exceeded the limit of resolution, it can be said that " substantially will not be right
Exposure has an impact ".This be comprising aftermentioned 2nd and the 3rd phase shifting mask defect correcting method including the present application in
Common premise item.
In addition, confirming film forming residue (condensation of the film of phase shift film) formation in defect portion is independent dotted defect
In the case of, it preferably will film forming residue shaping removal by method known to laser ablation processing etc..
(A) of Fig. 2 is the situation for showing to be formed the pattern of phase shift film 12 on the transparent substrates such as synthetic quartz glass 11
Enlarged plan view.Phase shift film is that the representative value of transmissivity is the left and right 1~10 [%] and has the effect of making phasing back or offset
Semi-permeable membrane, pattern shows typical line and the pattern in space.But actual pattern is not necessarily such pattern, in addition,
It is not limited to line and the pattern in space.Moreover, there are 1.0 μ m, 1.0 μm of needle pore defect d1 below on the pattern of phase shift film 12.
(B) of Fig. 2 is the sectional view that Fig. 2 (A) is cut off at X-X.Understand the diameter L1's formed on phase shift film 12
Needle pore defect d1 reaches transparent substrate 11.The check machine of photomask optically measures the positions and dimensions of defect.It is logical
Often, in the case where checking the semi-permeable membrane of single layer, preferentially the result of transillumination is judged.Even if in indirect illumination really
Defect is recognized, as long as there is no need to correct without transmission in transillumination.Moreover, when being judged as YES size by transillumination
For 1.0 1.0 μm of needle pore defects below of μ m when, photomask is only locally accumulated at the part by optical cvd method, thus at
For state shown in (A) of Fig. 3 and (B) of Fig. 3, defect correction is completed.
Even if foring photomask at a part of place that should form the position of phase shift film, since its size is exposure machine
Limit of resolution size below, therefore the basic influence without after exposure, compared with the case where placing needle pore defect, defect obtains
Amendment is arrived.
(A) of Fig. 8 shows the phase shifting mask of the single layer comprising the white defect (needle pore defect) that size is 1.0 μm of 1.0 μ m
Optical reflection picture, (B) of Fig. 8 shows that observation is obtained using the pattern after the exposure after above-mentioned modification method on the mask
SEM pictures.Without finishing but carry out the amendment with flaw size comparable size, the figure after exposing as a result, using photomask
Case can be substantially modified to normally.
2. the amendment (the 2nd modification method) about non-disconnection defect
It is "Yes" (size 1.0 in the judging result of above-mentioned steps S2 in the case where being modified to non-disconnection defect
1.0 μm of μ m or more) in the case of, it is also necessary to judge whether the step S3 of broken string.Here, still " non-broken string " about " broken string "
Difference, it is real that judgement benchmark below, which is arranged,.
(A) of Fig. 4 shows the pattern of the defect portion d2 with phase shift film on line pattern.In addition, (B) of Fig. 4 is Fig. 4
(A) enlarged drawing on the defect portion peripheries d2 surrounded by single dotted broken line in.The size of defect portion d2 is more than 1.0 μm of 1.0 μ m,
But relative to pattern width Lo, pattern width Lr at the most thin position of pattern near defect portion is 1 μm remaining or more, because
This is judged as not breaking.
In the case where the judging result of step S3 is "No" (i.e. non-broken string), with adjacent with defect portion d2 with phase shift film
Patterned sides edge overlapping mode photomask is deposited in rectangle region T range (step P2-1).At this point, keeping overlapping wide
The size for spending O (O1, O2) is 1.0 μm or less.
Then, as shown in figure 5, so that the pattern edge of the non-broken string side in covering defect portion in the photomask accumulated
The side in portion is retained and the other side remains into the mode until covering the position in defect portion, around the defect portion
Photomask shaping removal be rectangular shape (step P2-2).The step is referred to as finishing, in (B) of Fig. 4, utilizes dashed line view
The region Z to be modified is shown.As shown in (B) of Fig. 5, using remaining remaining portion R and it includes the defects as white defect
Photomask shaping removal is rectangular shape by the mode in portion, and thus defect correction is completed.In addition, certainly, needing to keep away in finishing
Remove from and removes adjacent pattern.
In this way, in the case where the pattern as object is the pattern comprising non-disconnection defect, pre-set for distinguishing
The benchmark of " non-broken string " and " broken string ".In the above example, the pattern width Lr other than defect portion (from the end of pattern to
The distance of the end in defect portion) size be 1 μm below in the case of, be judged as if even if remaining the part of non-broken string " disconnected
Line " and be applicable in aftermentioned " amendment of disconnection defect " (the 3rd modification method).Here it is critical that even if existing on pattern
Flaw size is more than the defect portion of 1.0 μm of 1.0 μ m, since pattern ensures at least 1 μm or more of pattern width, in order to
The defect part for repairing the pattern of phase shift film has inserted the photomask that transmissivity is 0.
But closely say, electrode pattern etc. can not be said to be line pattern, therefore the area of still " non-broken string " of " breaking " sometimes
Dividing may not be appropriate, but it is possible to apply this modification method according to the size in defect portion and remaining portion.That is, existing defects size
Defect portion of 1.0 μm more than 1.0 μ m, a desirable pattern, which leaves 1 μm or more, can be applicable in this modification method.
(C) of Fig. 8 shows that the phase shift of the single layer comprising the white defect (non-disconnection defect) that size is 2.0 μm of 2.0 μ m is covered
The optical reflection picture of mould, (D) of Fig. 8, which shows to observe, obtains the mask using the pattern after the exposure after above-mentioned modification method
SEM pictures.It is formed a film in a manner of covering defect portion, only the left side edge in defect portion is modified, so as to correct line width
It is equal with normal portion.In this way, the defect of the non-broken string for phase shift film, replaces defect portion and only to ensuring using photomask
The unilateral side of pattern width is modified, and thus allows for the amendment of defect.When being exposed by revised photomask,
Closely say the position that attenuates for confirming 20nm or so, but it is slightly the rank that will not become problem in practical to influence.
3. the amendment (the 3rd modification method) about disconnection defect
It is that (size is 1.0 μ m, 1.0 μ to "Yes" in the judging result of above-mentioned steps S2 when being modified to disconnection defect
M or more) in the case of, it is also necessary to judge whether the step S3 of broken string.Here, " broken string " still the judgement benchmark of " non-broken string " with
It is above-mentioned identical.
That is, the case where physically breaking is judged as " breaking " certainly, in the case of not broken string completely, relative to figure
Case width Lo in the case that the pattern width Lr other than defect portion is less than defined a reference value (for example, 1 μm), is also judged as " disconnected
Line ".
(A) of Fig. 6 shows the pattern of the defect portion d3 with phase shift film on line pattern.In addition, (B) of Fig. 6 is Fig. 6
(A) enlarged drawing on the defect portion peripheries d3 surrounded by single dotted broken line in.Defect portion d3 is more than 1.0 μm of 1.0 μ m and breaks
Line.That is, the judging result of step S3 is "Yes" (breaking).
At this point, as shown in (B) of Fig. 6 and (A) of Fig. 7, in region, T accumulates photomask, and region T includes defect portion d3's
All, and the patterned sides edge adjacent with defect portion with phase shift film is Chong Die (step P3-1).It can also be in accumulation photomask
It is modified before.At this point, it is as shown in the drawing, it is adjusted so that region T and the phase shift film of the end E positioned at defect portion
The size of the width O (O3, O4) of overlapping is 1.0 μm or less.
Then, as shown in (B) of Fig. 7, it is left remaining portion R, and be by the edge part shaping removal of the both sides of photomask
Thus rectangular shape completes defect correction.At this point, by remain than pattern width it is wide go out width Delta t in a manner of be removed.Due to
Replaced the defect portion of the phase shift film of large area as disconnection defect using photomask, thus with the design value of the pattern width
The size of difference Δ t be affected to the line width after exposure.
According to experiment find out in order to mitigate exposure after pattern attenuate or it is thicker and need allow it is wide with the pattern
The error of the difference Δ t of the design value of degree be 0.1 ± 0.1 μm, that is, and the difference of the pattern dimension of script be 0.0 μm~+0.2 μm be
Best.
(A) of Fig. 9 shows the phase shifting mask of the single layer comprising the white defect (disconnection defect) that size is 4.0 μm of 2.0 μ m
Optical reflection picture.In this example embodiment, insufficient due to being overlapped, light leakage is generated from gap, pattern has occurred and attenuates.Fig. 9
(B) show comprising size be 4.0 μm of 2.0 μ m white defect (disconnection defect) single layer phase shifting mask in, will be overlapped
The optical reflection picture of width O (O3, O4) being sized in the case of+0.4 μm.Become in this case, local line width has occurred
Slightly.
Therefore, it reliably carries out being overlapped and being reliably modified to line width after photomask is formed when photomask forms a film
Defined range is important.
4. the limit about defect correction
Can utilize the defect that photomask is modified the defect of phase shifting mask according to the position of size or defect not
With and there are the limit.Due to be 0.1 μm or so using the precision of existing laser ablation, line width is 2~3 μm or so as premise,
Therefore, it is judged as NG there are the defect portion of 10 μm of 10 μ m or more, remakes phase shifting mask.
The application of (the 2nd embodiment) to edge enhancement type phase shifting mask
Also can for the phase shifting mask (being known as " edge enhancement type phase shifting mask " in this specification) of 2 layers of following construction
Using the modification method of the present invention, the phase shifting mask of this 2 layers construction is equipped with the pattern of photomask on the transparent substrate, in patterned sides
Phase shift film is accumulated in the position that the line widths such as edge are easy to attenuate.
It is covered with common two-value when the pattern of the 1st layer of photomask forms completion about the 1st layer of photomask
Mould is identical, therefore can be modified using the prior art.
About the white defect generated when forming the 2nd layer of phase shift film, the defect illustrated in the 1st embodiment can be applied
Modification method.
(other embodiment)
About the amendment of white defect, carried out as illustrated in the 1st and the 2nd embodiment, and about due to foreign matter
Or the film thickness of phase shift film is extremely equal and the amendment of " black defect " that generates, passes through known minimizing technology, such as laser ablation
Corresponding site is removed, thus on the basis of artificially forming " white defect ", according to the size of the white defect and position using this
Apply for the modification method of the white defect of invention.The size of white defect and the judgement benchmark at position directly use the present application
The judgement benchmark of middle explanation.
Industrial availability
In accordance with the invention it is possible to the defect for being difficult to modified phase shifting mask in the past is modified, therefore industrially
Utilizability is very big.
Claims (8)
1. a kind of defect correcting method of phase shifting mask, which is characterized in that include the following steps：
First step (S1), for the photomask on the transparent substrate with pattern formed by phase shift film, comprising defect portion
Substrate measures the positions and dimensions in defect portion；Second step (S2) judges that the size in the defect portion on the phase shift film is
No is 1.0 μm of 1.0 μ m or more；And third step (P1), the result judged as "No" in the case of, it is described lack
The photomask in the defect portion is filled in accumulation in damage portion.
2. a kind of defect correcting method of phase shifting mask, which is characterized in that include the following steps：
First step (S1), for the photomask on the transparent substrate with pattern formed by phase shift film, comprising defect portion
Substrate measures the positions and dimensions in defect portion；Second step (S2) judges that the size in the defect portion on the phase shift film is
No is 1.0 μm of 1.0 μ m or more；And third step (S3), in the case where the judging result of the second step is "Yes",
It further determines whether to break,
In the case where the judging result of the third step is "No", comprise the steps of：
Four steps (P2-1) will be hidden in a manner of Chong Die with the patterned sides edge adjacent with the defect portion of the phase shift film
Light membrane stack product is rectangular shape；And
5th step (P2-2), so that the pattern edge of the non-broken string side for covering the defect portion in the photomask accumulated
The side in portion is retained and the other side remains into the mode until covering the position in defect portion, around the defect portion
Photomask shaping removal is rectangular shape,
It is 1.0 μm or less to make the size of the width of the overlapping.
3. a kind of defect correcting method of phase shifting mask, which is characterized in that include the following steps：
First step (S1), for the photomask on the transparent substrate with pattern formed by phase shift film, comprising white defect
Substrate measures the positions and dimensions of white defect；Second step (S2) judges whether the flaw size on the phase shift film is 1.0 μ
M × 1.0 μm or more；And third step (S3) is further sentenced in the case where the judging result of the second step is "Yes"
It is disconnected whether to break,
In the case where the judging result of the third step (S3) is "Yes", comprise the steps of：
Four steps (P3-1) accumulates photomask in following region, which includes the whole in the defect portion, and with institute
State the edge part overlapping adjacent with the defect portion of phase shift film；And
5th step (P3-2), according to the pattern width relative to the pattern width before amendment error be 0.1 μm ± 0.1 μm
Mode to the photomask carry out shaping removal,
It is 1.0 μm or less to make the size of the width of the overlapping.
4. a kind of phase shifting mask of the photomask for the pattern being formed with phase shift film on the transparent substrate, wherein
The phase shifting mask includes the defect correction film being made of photomask on the pattern.
5. a kind of phase shift of the photomask of the pattern of pattern being sequentially formed with photomask on the transparent substrate and phase shift film is covered
Mould, wherein
The phase shifting mask includes the defect correction film being made of photomask on the pattern.
6. phase shifting mask according to claim 4 or 5, which is characterized in that
It is received in a manner of the defect portion of pattern of the defect correction film to cover phase shift film.
7. phase shifting mask according to claim 6, which is characterized in that
Size in the defect portion for being judged as the pattern is more than the non-broken string in defect portion of 1.0 μm of 1.0 μ m and the pattern
In the case of, it is 1.0 μm or less by the control of the overlapping widths of the phase shift film of lower layer and the defect correction film on upper layer.
8. phase shifting mask according to claim 6, which is characterized in that
In the case where being judged as that the defect portion of the pattern breaks, by the phase shift film of the lower layer in the defect portion and upper layer
The overlapping widths control of defect correction film is for 1.0 μm hereinafter, also, by the width for the defect correction film accumulated in the defect portion
And the difference control of the design value of the pattern width in defect portion is 0.1 μm ± 0.1 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2017017337A JP6960741B2 (en) | 2017-02-02 | 2017-02-02 | How to fix defects in phase shift mask |
| JP2017-017337 | 2017-02-02 |
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| CN108388078A true CN108388078A (en) | 2018-08-10 |
| CN108388078B CN108388078B (en) | 2021-05-18 |
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| CN201810100694.4A Active CN108388078B (en) | 2017-02-02 | 2018-02-01 | Defect correction method for phase shift mask |
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| JP (1) | JP6960741B2 (en) |
| KR (1) | KR102077904B1 (en) |
| CN (1) | CN108388078B (en) |
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| CN111610693A (en) * | 2019-02-26 | 2020-09-01 | 中芯国际集成电路制造（天津）有限公司 | Repairing method of mask plate |
| CN113721419A (en) * | 2020-05-25 | 2021-11-30 | 株式会社Sk电子 | Method for correcting photomask |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020208980A1 (en) * | 2020-07-17 | 2022-01-20 | Carl Zeiss Smt Gmbh | Method and apparatus for repairing a lithographic mask defect |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI663469B (en) | 2019-06-21 |
| CN108388078B (en) | 2021-05-18 |
| TW201841052A (en) | 2018-11-16 |
| KR102077904B1 (en) | 2020-02-14 |
| JP6960741B2 (en) | 2021-11-05 |
| JP2018124466A (en) | 2018-08-09 |
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