CN108376725A - 一种基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器 - Google Patents
一种基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器 Download PDFInfo
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Abstract
一种基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器,属于红外探测技术领域。该探测器由下至上依次由背电极、重掺杂的N+型InP衬底、重掺杂的N+型InP电子传输层、未掺杂的窄禁带InSb有源区、重掺杂的P+型GaSb空穴传输层以及栅条形上电极)组成。本发明采用低压金属有机物化学气相外延技术,在重掺杂的N+型InP衬底制备相应结构,并利用磁控溅射技术制备上电极和背电极,得到的器件具有探测率高、响应速度快、工作温度高、制备工艺简单等特点,在室温条件下,归一化探测率D*为2.4×1010cm Hz1/ 2W‑1,可应用于航天、军事、工业、民用等领域。
Description
技术领域
本发明属于红外探测技术领域,具体涉及一种基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器。
背景技术
红外技术是研究红外辐射的产生、传播、转化、测量及其应用的技术科学,其中的红外探测技术作为红外技术的重要分支,是一种利用目标与背景之间的红外辐射差异,所形成的热点或图像来获取目标和背景信息的技术。红外探测技术的核心部分是红外探测器,其功能在于将红外辐射转换为电信号,从而能够进一步分析、处理目标信息。红外探测技术以其独特的优势,在跟踪探测领域有着传统电子雷达不可比拟的优势,因此在国家安全及军事领域中有着重要的地位。同时,红外波段也是重要的通信波段,掌握和应用先进的红外探测技术,对提高国防信息化建设和民用设施信息化建设同样是至关重要的。
相比于传统的制冷型红外探测器,非制冷型红外探测器无需制冷设备,因此体积小、重量轻、成本低,同时具有低功耗、可便携、连续工作时间长等优势,在军用和民用领域得到迅速的推广。由于传统光伏型探测器受到窄带隙材料的限制,室温下难以制备高探测率的器件,因此非制冷型红外技术以热释电探测器、热电堆探测器、光机械结构等热红外探测器件为主。但是,热红外探测器的探测率不及光伏型探测器,在空间探测、目标追踪等对探测率要求苛刻的领域,还不能实用化。同时,热红外探测器的响应速度较慢,难以满足军事领域、信息通讯领域的应用要求。因此,研制具有高探测率、高响应速度的光伏型非制冷红外探测器对推动国防军事以及民用基础设施建设都有着重要意义。
目前,在光伏型非制冷红外探测器的研究方面,以锑化物为基础的超晶格材料因其优秀的性能引起了广泛关注,成为近年来研究的热点。新墨西哥大学Carl等人在GaSb衬底上外延生长的InAs/GaSb超晶格探测器,在室温下归一化探测率达到8.5×109cm Hz1/2/W,十分接近实用化水平。以色列SCD公司的Glozman等人成功研制出以InAlSb材料制成的红外焦平面阵列,像元个数640×512,25℃时的噪声等效温差(NETD)仅为20mK,且在110K的温度下能够清晰成像。2013年,该公司进一步推出采用InSb/InAsSb超晶格材料制成的红外焦平面阵列,并将工作温度提升至193K时仍能清晰成像[8]。
中国科学院半导体研究所的王国伟等人制备了截止波长达到8.72μm的InAs/GaSbⅡ型超晶格红外探测器件,在温度为77K的条件下探测率达到8.1×1010cm Hz1/2/W。中国科学院上海技术物理研究所完成了128×128像元的红外焦平面阵列的制备,77K温度下,黑体辐射测试的峰值探测率高达8.1×1010cmHz1/2/W。
发明内容
本发明的目的是制备一种在室温条件下具有较高探测率、较高响应速度的、工作波段为3~5μm的基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器。
本发明所述的一种基于GaSb/InSb/InP异质PIN结构的光伏型非制冷红外探测器,由下至上依次由背电极1、重掺杂的N+型InP衬底2、重掺杂的N+型InP电子传输层3、未掺杂的窄禁带InSb有源区4、重掺杂的P+型GaSb空穴传输层5以及栅条形上电极6组成。
前面所述的重掺杂的N+型InP衬底2的施主掺杂浓度为1×1018~2×1018cm-3,厚度为3.5~5.0μm;重掺杂的N+型InP电子传输层3的施主掺杂浓度为5×1018~8×1018cm-3,厚度为0.2~0.5μm;未掺杂的窄禁带InSb有源区4的厚度为0.5~2μm;重掺杂的P+型GaSb空穴传输层5的受主掺杂浓度为9×1017~1.2×1018cm-3,厚度为0.2~0.5μm。
前面所述的P+型受主掺杂剂为Be、Mg、C或Zn;N+型施主掺杂剂为Se、Te或Sn。
前面所述的栅条形上电极和背电极的材料是Al、Cu、Au、Ag或Pt,是在器件的上表面和下表面通过蒸发工艺制备的;背电极的金属层厚度为200~300nm,栅条形上电极的金属层厚度为200~300nm,栅条形上电极覆盖面积占电池上表面面积的8~15%。
本发明采用GaSb/InSb/InP异质PIN结构,未掺杂的窄禁带InSb材料作为有源区,起到了吸收红外辐射并转换为电流的作用。由于InSb材料的禁带宽度窄,因此俄歇复合率很高,极大地缩短了载流子的寿命,引入了较大的暗电流,从而在很大程度上限制了探测器的性能。为了抑制俄歇复合效应所引入的噪声,采用两种禁带宽度较大的材料GaSb与InP,作为载流子的传输层,能够有效的将俄歇复合限制在有源区内,从而降低探测器的暗电流。同时,GaSb材料与InP材料在与InSb材料接触形成异质结时,分别在导带与价带中引入了0.52eV以及0.98eV的带阶,从而形成了有效的电子势垒及空穴势垒,限制了InSb外延层中载流子的扩散运动,从而可以抑制扩散效应所引发的噪声电流。此外,在工作时,红外探测器处在相应的反偏压的条件下,非故意掺杂的InSb有源区满足全耗尽条件,其自由载流子的浓度相比于热平衡时将大大降低,从而降低了发生俄歇复合的载流子的数量,同样削弱了俄歇复合效应引发的暗电流。在这几种机制的作用下,探测器的归一化探测率可以达到2.4×1010cm Hz1/2/W。
由于光伏型红外探测器利用的是半导体材料的光生伏特效应,工作机理决定了其响应时间较短的特性,同时InSb材料具有很高的电子迁移率,探测器的响应时间可达到纳秒级。
附图说明
图1:本发明的GaSb/InSb/InP异质PIN红外探测器的结构示意图;
图2:本发明的GaSb/InSb/InP异质PIN红外探测器热平衡时的能带结构示意图(上图),及反偏压条件下的能带结构图(下图);
图3:本发明的GaSb/InSb/InP异质PIN红外探测器在2~8μm波段的光谱响应曲线;
图4:本发明的GaSb/InSb/InP异质PIN红外探测器在正偏压及反偏压条件下的暗电流。
如图1所示,本发明所述的GaSb/InSb/InP异质PIN红外探测器,由下至上依次包括背电极1、重掺的N+型InP衬底2、重掺杂的N+型InP3电子传输层、未掺杂的窄禁带InSb有源区4、重掺杂的P+型GaSb5空穴传输层以及栅条形上电极6。
如图2所示,本发明所述的GaSb/InSb/InP异质PIN红外探测器的能带结构。其中上图为热平衡条件下的能带结构,下图为0.3V反偏压下的能带结构。
InSb材料的禁带宽度为0.18eV,对应的截止波长为6.89μm,起到了吸收红外辐射的作用。GaSb材料与InP材料的禁带宽度分别为0.7eV和1.34eV,在与InSb材料接触形成异质结时,分别在导带、价带引入了0.52eV以及0.98eV的带阶,从而分别形成了电子势垒及空穴势垒,限制了InSb外延层中载流子的扩散运动,从而能够抑制探测器的暗电流。
通过控制GaSb材料以及InP材料的掺杂浓度,使三种材料在热平衡条件下的费米能级基本持平,因此热平衡条件下即使GaSb与InP材料均为重型掺杂,但是能带并不会弯曲。
反偏压条件下,反偏压主要集中在InSb有源区,使得InSb材料的能带发生倾斜,光生载流子在空间电荷区的高强度电场下迅速分离,并漂移度过空间电荷区,通过到达电极,形成响应时间很短的光生电流。
如图3所示,本发明所述的GaSb/InSb/InP异质PIN红外探测器在入射光波长为0.5~8μm波段的光谱响应曲线。由于InSb材料的禁带宽度较窄,为0.18eV,对应的截止波长可以达到6.89μm。吸收峰值发生在3.5μm处,其响应率达到了1.67A/W。
如图4所示,本发明的GaSb/InSb/InP异质PIN红外探测器在正偏压及反偏压条件下的暗电流。GaSb材料与InP材料形成的电子势垒与空穴势垒,限制了InSb外延层中载流子的扩散运动,因此在正偏压下,少子扩散产生的电流密度依然很低。同时,采用两种禁带宽度较大的GaSb材料与InP材料作为载流子的传输层,将俄歇复合效应的影响限制在了InSb有源区内,当施加反偏压于器件两端时,空间电荷区逐渐扩展,有源区内的自由载流子数量随反偏电压的增大而迅速下降,因此俄歇复合率迅速下降,暗电流也随之迅速降低。
具体实施方式
实施例1:
以掺Te的N+型InP抛光单晶片为衬底,净施主浓度为1×1018cm-3,晶向为(100)偏(111)2°,制备结构为背电极/重掺的N+型InP衬底/重掺杂的N+型InP电子传输层/未掺杂的InSb有源区/重掺杂的P+型GaSb空穴传输层/栅条形上电极的红外探测器。
多层材料结构的生长在低压金属有机化学气相沉积(MOCVD)系统中进行。生长所用Ga、In、Sb和P源分别为三甲基镓(TMGa)、三甲基铟(TMIn)、三乙基锑(TESb)、体积比浓度为10%的磷烷(PH3),金属有机源均置于高精度控温冷阱中,源温分别为:TMGa:-10℃;TMIn:16℃;TMSb:-10℃。
材料掺杂所用N+型掺杂源为二乙基碲(DETe);P+型掺杂源为二乙基锌(DEZn),置于高精度控温冷阱中,冷阱温度0℃。
GaSb/InSb/InP双异质红外探测器各层材料的详细生长参数列于表1。按照表1给出的生长条件,在掺Te的N+型InP衬底上依次外延生长重掺杂的N+型InP电子传输层/非故意掺杂的InSb有源区/重掺杂的P+型GaSb空穴传输层。生长获得的GaSb/InSb/InP异质PIN外延片各层的基本材料参数列于表2。
表1:GaSb/InSb/InP双异质红外探测器各层材料的生长参数
表2:GaSb/InSb/InP双异质红外探测器各层材料的基本材料参数
材料基本参数 | N+型InP衬底 | N+型InP | InSb有源区 | P+型GaSb |
厚度μm | 350 | 0.4 | 1.0 | 0.4 |
载流子浓度cm-3 | 1.0×1018 | 7.5×1017 | 1×1016 | 1.0×1018 |
禁带宽度eV | 1.34 | 1.34 | 0.18 | 0.70 |
电极的制备工艺流程如下:
1.清洗:用去离子水清洗烧杯,烘箱烘干,把前面采用MOCVD技术制备的GaSb/InSb/InP双异质结外延片放入;加CCl4,超声清洗10分钟,废液倒出,重复一次;加丙酮,超声清洗10分钟,废液倒出,重复一次;加酒精,超声清洗10分钟,废液倒出,重复一次;取出外延片用氮气吹干;
2.烘烤:将上述的GaSb/InSb/InP双异质结外延片在80℃烘箱烘烤20分钟;
3.蒸镀上电极:在上述GaSb/InSb/InP双异质结外延片上表面电子束蒸发Al(200nm)上电极,并采用标准的光刻技术将上电极做成栅条型,上电极面积占上表面面积的10%。
4.减薄:细砂研磨至250μm,用金刚砂抛光;
5.蒸镀背电极:在上述GaSb/InSb/InP双异质结外延片N+型InP衬底背面电子束蒸发Al(200nm)背电极。
Claims (4)
1.一种基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器,其特征在于:由下至上依次由背电极(1)、重掺杂的N+型InP衬底(2)、重掺杂的N+型InP电子传输层(3)、未掺杂的窄禁带InSb有源区(4)、重掺杂的P+型GaSb空穴传输层(5)以及栅条形上电极(6)组成。
2.如权利要求1所述的一种基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器,其特征在于:重掺杂的N+型InP衬底(2)的施主掺杂浓度为1×1018~2×1018cm-3,厚度为3.5~5.0μm;重掺杂的N+型InP电子传输层(3)的施主掺杂浓度为5×1018~8×1018cm-3,厚度为0.2~0.5μm;未掺杂的窄禁带InSb有源区(4)的厚度为0.5~2μm;重掺杂的P+型GaSb空穴传输层(5)的受主掺杂浓度为9×1017~1.2×1018cm-3,厚度为0.2~0.5μm。
3.如权利要求1所述的一种基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器,其特征在于:P+型受主掺杂剂为Be、Mg、C或Zn;N+型施主掺杂剂为Se、Te或Sn。
4.如权利要求1所述的一种基于GaSb/InSb/InP异质PIN结构的光伏型红外探测器,其特征在于:栅条形上电极(6)和背电极(1)的材料是Al、Cu、Au、Ag或Pt,是在器件的上表面和下表面通过蒸发工艺制备的;背电极的厚度为200~300nm,栅条形上电极的厚度为200~300nm,栅条形上电极覆盖面积占电池上表面面积的8~15%。
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