CN108376669B - 共晶焊接组件及共晶焊接方法 - Google Patents
共晶焊接组件及共晶焊接方法 Download PDFInfo
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- CN108376669B CN108376669B CN201810230763.3A CN201810230763A CN108376669B CN 108376669 B CN108376669 B CN 108376669B CN 201810230763 A CN201810230763 A CN 201810230763A CN 108376669 B CN108376669 B CN 108376669B
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- 230000005496 eutectics Effects 0.000 title claims abstract description 71
- 238000003466 welding Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims description 25
- 229910000679 solder Inorganic materials 0.000 claims abstract description 36
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 27
- 239000000956 alloy Substances 0.000 claims abstract description 27
- 238000005476 soldering Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000011800 void material Substances 0.000 abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910001128 Sn alloy Inorganic materials 0.000 description 4
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83026—Applying a precursor material to the bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83075—Composition of the atmosphere being inert
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810230763.3A CN108376669B (zh) | 2018-03-20 | 2018-03-20 | 共晶焊接组件及共晶焊接方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810230763.3A CN108376669B (zh) | 2018-03-20 | 2018-03-20 | 共晶焊接组件及共晶焊接方法 |
Publications (2)
Publication Number | Publication Date |
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CN108376669A CN108376669A (zh) | 2018-08-07 |
CN108376669B true CN108376669B (zh) | 2020-11-27 |
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CN201810230763.3A Active CN108376669B (zh) | 2018-03-20 | 2018-03-20 | 共晶焊接组件及共晶焊接方法 |
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CN (1) | CN108376669B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109524381A (zh) * | 2018-11-14 | 2019-03-26 | 成都亚光电子股份有限公司 | 一种微波组件及其制备方法 |
CN109663998A (zh) * | 2018-11-29 | 2019-04-23 | 贵州振华风光半导体有限公司 | 一种功率半导体芯片钎焊溢料控制方法 |
CN113787241B (zh) * | 2021-08-25 | 2023-06-20 | 北京无线电测量研究所 | 一种用于微带器件的焊接工装及基于该焊接工装的焊接方法 |
CN113681107B (zh) * | 2021-09-10 | 2023-07-04 | 上海无线电设备研究所 | 一种微带板与基板焊接装置及使用方法 |
CN113751821B (zh) * | 2021-09-17 | 2023-02-03 | 扬州虹扬科技发展有限公司 | 一种焊接治具及晶粒的焊接方法 |
CN115020252B (zh) * | 2022-08-10 | 2022-11-08 | 合肥芯谷微电子有限公司 | 一种tr组件的制作方法 |
CN115106671B (zh) * | 2022-08-22 | 2022-11-25 | 度亘激光技术(苏州)有限公司 | 封装方法及封装夹具 |
CN117564388A (zh) * | 2024-01-15 | 2024-02-20 | 成都世源频控技术股份有限公司 | 一种微波模块基片与腔体自动烧结方法及其烧结装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6142357A (en) * | 1998-10-15 | 2000-11-07 | Mcms, Inc. | Molded selective solder pallet |
CN201399637Y (zh) * | 2009-04-07 | 2010-02-10 | 英业达股份有限公司 | 承载盘 |
CN105789071A (zh) * | 2016-03-29 | 2016-07-20 | 中国电子科技集团公司第二十九研究所 | 一种用于微波芯片共晶加压的装置及加压方法 |
CN106180954A (zh) * | 2016-08-08 | 2016-12-07 | 华东光电集成器件研究所 | 一种多芯片共晶焊施压装置 |
-
2018
- 2018-03-20 CN CN201810230763.3A patent/CN108376669B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6142357A (en) * | 1998-10-15 | 2000-11-07 | Mcms, Inc. | Molded selective solder pallet |
CN201399637Y (zh) * | 2009-04-07 | 2010-02-10 | 英业达股份有限公司 | 承载盘 |
CN105789071A (zh) * | 2016-03-29 | 2016-07-20 | 中国电子科技集团公司第二十九研究所 | 一种用于微波芯片共晶加压的装置及加压方法 |
CN106180954A (zh) * | 2016-08-08 | 2016-12-07 | 华东光电集成器件研究所 | 一种多芯片共晶焊施压装置 |
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CN108376669A (zh) | 2018-08-07 |
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Effective date of registration: 20230707 Address after: 518000 107, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province Patentee after: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd. Address before: 518102 East, 2nd floor, building 37, chentian Industrial Zone, Baotian 1st Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. Patentee before: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd. |
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Effective date of registration: 20231204 Address after: Building 7-6, Industrial Control Cloud Creation Port, No. 58 Hongtu Avenue, Economic Development Zone, Xinjian District, Nanchang City, Jiangxi Province, 330000 Patentee after: Jiangxi Huaxun Fangzhou Intelligent Technology Co.,Ltd. Address before: 518000 107, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province Patentee before: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd. |