CN108375722B - Independent temperature control test structure for reliability test and test method thereof - Google Patents
Independent temperature control test structure for reliability test and test method thereof Download PDFInfo
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- CN108375722B CN108375722B CN201810096981.2A CN201810096981A CN108375722B CN 108375722 B CN108375722 B CN 108375722B CN 201810096981 A CN201810096981 A CN 201810096981A CN 108375722 B CN108375722 B CN 108375722B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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Abstract
The invention discloses a test structure for reliability test with independent temperature control and a test method thereof, wherein the test structure comprises two pieces of polycrystalline silicon which are arranged in parallel; a structure to be tested, which is arranged at the middle point of the space between the two pieces of polysilicon; and the two diode temperature sensors are symmetrically arranged on two sides of the structure to be detected and are also positioned at the middle point of the space between the two pieces of polycrystalline silicon. The test structure and the test method for reliability test with independent temperature control can realize independent control of the temperature of the structure to be tested, effectively shorten the test time of the whole test, reduce the retest rate, improve the test efficiency, enlarge the applicable occasions of high-temperature wafer level test, modulate the current passing through the polysilicon to generate joule heat, and linearly increase the temperature of the polysilicon.
Description
Technical Field
The present invention relates to a semiconductor test structure and method, and more particularly, to an independent temperature control test structure and method for reliability testing.
Background
The worst state of a device is generally tested by a reliability test, so most tests are high-temperature tests, most of the current wafer-level high-temperature tests are heated by a wafer bearing table, and the wafer bearing table is heated to have the following adverse conditions: the temperature rise and fall of the wafer bearing table and the preheating before the test waste a great deal of time, so that the test time of each project is longer; the situation that the probe card slides out of a device wiring bonding pad is easily caused in the high-temperature test process, and the retest rate is high; the high temperature has higher requirement on the electric leakage of the probe card, needs to be specially made and has higher cost. In addition, reliability monitoring in the factory is not possible when high temperature tests are performed on production wafers or when high temperature probe stations are not allowed in certain areas of the factory.
Disclosure of Invention
The invention provides a test structure for reliability test and a test method thereof, which have the advantages of simple structure, convenient operation and accurate test result and are capable of independently controlling the temperature, and the test method thereof is provided for solving the problems in the prior art.
The invention provides a test structure for reliability test with independent temperature control.
In order to achieve the purpose, the invention adopts the following technical scheme:
an independent temperature control test structure for reliability test comprises
Two pieces of polysilicon arranged in parallel;
a structure to be tested, which is arranged at the middle point of the space between the two pieces of polysilicon;
and the two diode temperature sensors are symmetrically arranged on two sides of the structure to be detected and are also positioned at the middle point of the space between the two pieces of polycrystalline silicon.
In order to further optimize the technical scheme, the technical measures adopted by the invention are as follows:
preferably, the diode temperature sensor and the structure to be measured have the same size.
More preferably, the diode temperature sensor is connected with a voltage tester.
More preferably, the two pieces of polysilicon are of the same material and size.
More preferably, both pieces of polysilicon communicate with the circuit.
More preferably, the current levels in the two pieces of polysilicon are uniform.
More preferably, the two pieces of polysilicon are connected in series in the circuit.
More preferably, the polysilicon surface is free of metal silicide.
Secondly, the invention provides a test method of the test structure for reliability test with independent temperature control.
In order to achieve the purpose, the invention adopts the following technical scheme:
a test method of a test structure for reliability test with independent temperature control comprises the following steps:
s1, arranging two pieces of polycrystalline silicon in parallel;
s2, placing the structure to be measured and the diode temperature sensor at the middle point of the space between the two pieces of polysilicon;
s3, connecting the polysilicon to the circuit, modulating the current passing through the polysilicon to generate Joule heat, so that the temperature of the polysilicon is increased linearly;
s4, monitoring the voltage of the diode temperature sensor and converting the voltage into the diode temperature, and when the preset target temperature is approached, properly adjusting the current to enable the temperature to be smoothly increased to the target temperature;
and S5, continuously fine-tuning the current passing through the polysilicon through the feedback of the diode temperature sensor after the target temperature is reached, so that the temperature is maintained at the target temperature and the reliability of the structure to be tested is tested.
By adopting the technical scheme, compared with the prior art, the invention has the following technical effects:
the test structure and the test method for reliability test with independent temperature control can realize independent control of the temperature of the structure to be tested, effectively shorten the test time of the whole test, reduce the retest rate, improve the test efficiency, enlarge the applicable occasions of high-temperature wafer level test, modulate the current passing through the polysilicon to generate joule heat, and linearly increase the temperature of the polysilicon; when the target temperature is approached, the current is properly adjusted, so that the temperature is smoothly increased to the target temperature; after the target temperature is reached, the current passing through the polysilicon is continuously finely adjusted by the feedback of the diode temperature sensor, so that the temperature is maintained at the target temperature.
Drawings
FIG. 1 is a schematic diagram of a wafer heating structure of a wafer carrier used in a conventional high temperature test;
FIG. 2 is a test structure for reliability testing with independent temperature control according to a preferred embodiment of the present invention;
FIG. 3 is a flow chart of a test method of a preferred embodiment of the present invention;
FIG. 4 is a graph of polysilicon current and voltage across a diode temperature sensor over time in accordance with a preferred embodiment of the present invention;
the specific reference numerals are:
1, polycrystalline silicon; 2, a structure to be detected; 3 diode temperature sensor.
Detailed Description
The invention provides a test structure for reliability test with independent temperature control and a test method thereof.
FIG. 1 is a schematic diagram of a wafer heating structure of a wafer carrier used in a conventional high temperature test; FIG. 2 is a test structure for reliability testing with independent temperature control according to a preferred embodiment of the present invention; FIG. 3 is a flow chart of a test method of a preferred embodiment of the present invention; FIG. 4 is a graph of polysilicon current and voltage across a diode temperature sensor over time in accordance with a preferred embodiment of the present invention.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
As shown in FIG. 2, an independent temperature control test structure for reliability test comprises
Two pieces of polycrystalline silicon 1 are arranged in parallel;
a structure to be tested 2 arranged at the middle point of the space between the two pieces of polycrystalline silicon 1;
and the two diode temperature sensors 3 are symmetrically arranged on two sides of the structure to be detected 2 and are also positioned at the middle point of the distance between the two pieces of polycrystalline silicon 1.
Further, in a preferred embodiment, the diode temperature sensor 3 and the structure 2 to be measured have the same size.
Still further, in a preferred embodiment, the diode temperature sensor 3 is connected to a voltage tester.
Further, in a preferred embodiment, the two pieces of polysilicon 1 are made of the same material and have the same size.
Further, in a preferred embodiment, both pieces of polysilicon 1 are connected to the circuit.
Further, in a preferred embodiment, the current levels in the two pieces of polysilicon 1 are the same.
Further, in a preferred embodiment, two pieces of polysilicon 1 are connected in series in the circuit.
Further, in a preferred embodiment, the surface of the polysilicon 1 is free of metal silicide.
As shown in fig. 3, the present invention further provides a testing method of a test structure for reliability testing using the independent temperature control, comprising the following steps:
s1, arranging two pieces of polysilicon 1 in parallel;
s2, placing the structure to be measured 2 and the diode temperature sensor 3 at the middle point of the space between the two pieces of polysilicon 1;
s3, connecting the polysilicon 1 to a circuit, modulating the current passing through the polysilicon 1 to generate Joule heat, and linearly increasing the temperature of the polysilicon 1;
s4 monitoring the voltage of the diode temperature sensor 3 and converting it into the diode temperature, and when approaching the predetermined target temperature, adjusting the current appropriately so that the temperature smoothly increases to the target temperature;
and S5, continuously fine-tuning the current passing through the polysilicon 1 through the feedback of the diode temperature sensor 3 after the target temperature is reached, so that the temperature is maintained at the target temperature and the reliability of the structure to be tested 2 is tested.
As shown in fig. 3, after the polysilicon 1 of the present invention is connected to the circuit, the temperature is stably raised, the current amount is stably increased in the interval 1, the voltage of the diode temperature sensor 3 is monitored and converted into the diode temperature, when the temperature of the diode temperature sensor 3 is about to reach the predetermined temperature, i.e., the interval 2 is entered, the input current amount is reduced, the temperature raising speed of the polysilicon 1 is reduced, when the temperature of the diode temperature sensor 3 reaches the predetermined temperature, i.e., the interval 3 is reached, the stable current transmission is performed, the temperature of the diode temperature sensor 3 is stabilized, and the purpose of stably testing the structure to be tested 2 at a high temperature can be achieved.
In the description herein, reference to the description of the term "one preferred embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (9)
1. The utility model provides an independent accuse temperature is used for test structure of reliability test which characterized in that: comprises that
Two pieces of polysilicon arranged in parallel;
a structure to be tested, which is arranged at the middle point of the space between the two pieces of polysilicon;
the two diode temperature sensors are symmetrically arranged on two sides of the structure to be measured and are also positioned at the middle point of the space between the two pieces of polycrystalline silicon;
and adjusting the current passing through the polysilicon according to the temperature feedback of the diode temperature sensor so as to control the joule heat generated by the polysilicon.
2. The independent temperature controlled test structure for reliability test according to claim 1, wherein: the diode temperature sensor and the structure to be measured are consistent in size.
3. The independent temperature controlled test structure for reliability test according to claim 2, wherein: and the diode temperature sensor is connected with a voltage tester.
4. The independent temperature controlled test structure for reliability test according to claim 3, wherein: the two pieces of polysilicon are made of the same material and have the same size.
5. The independent temperature controlled test structure for reliability test according to claim 4, wherein: the two pieces of polysilicon are both communicated with the circuit.
6. The independent temperature controlled test structure for reliability test according to claim 5, wherein: the current in the two pieces of polysilicon is the same.
7. The independent temperature controlled test structure for reliability test according to claim 1, wherein: two pieces of polysilicon are connected in series in the circuit.
8. The independent temperature controlled test structure for reliability test according to claim 1, wherein: the polysilicon surface is free of metal silicide.
9. A method of testing using the independently temperature controlled test structure for reliability testing of claim 1, characterized by: the method comprises the following steps:
s1, arranging two pieces of polycrystalline silicon in parallel;
s2, placing the structure to be measured and the diode temperature sensor at the middle point of the space between the two pieces of polysilicon;
s3, connecting the polysilicon to the circuit, modulating the current passing through the polysilicon to generate Joule heat, so that the temperature of the polysilicon is increased linearly;
s4, monitoring the voltage at two ends of the diode temperature sensor and converting the voltage into the diode temperature, and when the preset target temperature is approached, properly adjusting the current to enable the temperature to be smoothly increased to the target temperature;
and S5, continuously fine-tuning the current passing through the polysilicon through the feedback of the diode temperature sensor after the target temperature is reached, so that the temperature is maintained at the target temperature and the reliability of the structure to be tested is tested.
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| CN201810096981.2A CN108375722B (en) | 2018-01-31 | 2018-01-31 | Independent temperature control test structure for reliability test and test method thereof |
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| CN201810096981.2A CN108375722B (en) | 2018-01-31 | 2018-01-31 | Independent temperature control test structure for reliability test and test method thereof |
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| CN108375722B true CN108375722B (en) | 2020-08-21 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377068A (en) * | 2001-03-28 | 2002-10-30 | 华邦电子股份有限公司 | Test device and method removing cationic pollution |
| CN1380689A (en) * | 2001-04-12 | 2002-11-20 | 华邦电子股份有限公司 | Reliability testing device and its testing method |
| CN103137610A (en) * | 2011-11-25 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Micro-heating device and forming method |
| CN103808425A (en) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring polycrystalline silicon temperature change |
| CN107421652A (en) * | 2017-07-17 | 2017-12-01 | 上海华虹宏力半导体制造有限公司 | Polysilicon resistance temperature coefficient monitoring method |
-
2018
- 2018-01-31 CN CN201810096981.2A patent/CN108375722B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377068A (en) * | 2001-03-28 | 2002-10-30 | 华邦电子股份有限公司 | Test device and method removing cationic pollution |
| CN1380689A (en) * | 2001-04-12 | 2002-11-20 | 华邦电子股份有限公司 | Reliability testing device and its testing method |
| CN103137610A (en) * | 2011-11-25 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Micro-heating device and forming method |
| CN103808425A (en) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring polycrystalline silicon temperature change |
| CN107421652A (en) * | 2017-07-17 | 2017-12-01 | 上海华虹宏力半导体制造有限公司 | Polysilicon resistance temperature coefficient monitoring method |
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| CN108375722A (en) | 2018-08-07 |
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