CN103137610A - Micro-heating device and forming method - Google Patents
Micro-heating device and forming method Download PDFInfo
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- CN103137610A CN103137610A CN2011103828570A CN201110382857A CN103137610A CN 103137610 A CN103137610 A CN 103137610A CN 2011103828570 A CN2011103828570 A CN 2011103828570A CN 201110382857 A CN201110382857 A CN 201110382857A CN 103137610 A CN103137610 A CN 103137610A
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Abstract
The invention discloses a micro-heating device and a forming method. The micro-heating device comprises a semiconductor substrate and conductive grooves, wherein the semiconductor substrate is provided with a front surface, a back surface which is opposite to the front surface, and a to-be-detected device which is positioned on the front surface of the semiconductor substrate; the conductive grooves penetrate through the semiconductor substrate and surround the to-be-detected device; the surface of the conductive groove which is formed in the front surface of the semiconductor substrate is connected with an external circuit; and the surface of the conductive groove which is formed in the back surface of the semiconductor substrate is connected with the external circuit. The micro-heating device provided by the embodiment of the invention is provided with the conductive grooves which penetrate through the semiconductor substrate, and the conductive grooves are used for heating the to-be-detected device. The conductive grooves surround the to-be-detected device, so the to-be-detected device is uniformly heated. By changing voltage between two electrodes, heat which is generated by the conductive grooves is controlled, so the temperature of the to-be-detected device is controlled.
Description
Technical field
The present invention relates to semiconductor fabrication, particularly a kind of is little heater and the formation method that device to be detected heats up.
Background technology
Along with the integrated level of integrated circuit improves constantly, the device density in integrated circuit and current rate become more and more higher, and integrated circuit can produce more and more higher energy.Therefore, in integrated circuit, the high temperature reliability of device becomes more and more important, more and more need to carry out under higher temperature the test of integrated circuit.For example, to the electromigration of metal interconnecting wires detect, to the high temperature service life test of dielectric test gate dielectric layer and time correlation, device etc., all need to carry out under higher temperature, in order to can obtain the electric property of device under higher temperature.
Traditional electromigration detects, completes by package level reliability testing (Package level reliability test) with the dielectric test of time correlation, the high temperature service life test of device etc., but this electromigration evaluation method need to be to carrying out the test of chip package and the baking oven of packing into after the sample scribing.In this assembling process, the possibility that causes operability to be damaged due to static discharge is very large, consumes silicon chip.In evaluation procedure, completing from the chip package to the evaluation needs several time-of-weeks, and this just makes us not carry out on line real-time monitoring to the quality of metal interconnecting wires.Wafer scale reliability testing (Wafer-level reliability test) can be avoided the problem of excessive cycle in the electromigration evaluation procedure.
The below describes the method that in existing wafer scale reliability testing process, device is heated as an example of the metal interconnecting charge transfer testing apparatus example.The concrete structure of described metal interconnecting charge transfer testing apparatus as shown in Figure 1, comprise: the metal interconnecting wires to be detected 10 that carries out the electromigration reliability test, be positioned at the metal interconnecting layer 21 and 22 at described metal interconnecting wires to be detected 10 two ends, described metal interconnecting layer 21 has first and loads node F1 and the first sense node S1, and described metal interconnecting layer 22 has second and loads node F2 and the second sense node S2.At first apply bias voltage by loading between node F1 and the second loading node F2 first, generation current, then apply the voltage that produces after bias voltage between sensing the first loading node F1, the second loading node F2 respectively by the first sense node S1 and the second sense node S2, carry out the electromigration reliability test.
usually, utilizing conventional interconnect line electro-migration testing device to carry out the reliability testing of interconnection line wafer scale carries out in room temperature environment, therefore need to load node F1 and second by first of interconnection line electro-migration testing device in Fig. 1 loads node F2 interconnection line electro-migration testing device in Fig. 1 and applies a very large voltage, and then produce very large electric current in the metal interconnecting charge transfer testing apparatus in Fig. 1, utilize joule electrocaloric effect to make testing apparatus ambient temperature on every side rise to about 673.15 Kelvins, therefore be applied to electric current on interconnection line electro-migration testing device and the temperature of testing apparatus direct relation is arranged.Be applied to an electric current part on interconnection line electro-migration testing device for generation of joule electric heating, another part is used for the out-of-service time of test interconnection line, and this two parts electric current provides by same power supply, therefore can't accurately be identified for carrying out interconnection line out-of-service time size of current for generation of heat when measuring, thereby can't control accurately the temperature that is applied on interconnection line electro-migration testing device, can't utilize described device accurately to infer the electromigratory out-of-service time of interconnection line under different temperatures, cause the inaccurate of interconnection line electromigration evaluation.More testing apparatus and methods about the detection metal interconnecting charge transfer please refer to the U.S. Patent application that publication number is US2004/0036495A1.
Summary of the invention
The problem that the present invention solves is to provide a kind of little heater for device intensification to be detected, can independently utilize little heater to heat, and make device to be detected be heated evenly, and temperature is controlled.
For addressing the above problem, the embodiment of the present invention provides a kind of little heater, comprising:
Semiconductor substrate, described Semiconductor substrate have the front and with the back side of vis-a-vis, be positioned at the device to be detected on described Semiconductor substrate front;
The conductive trench that runs through described Semiconductor substrate, described conductive trench is around described device setting to be detected, and described conductive trench is used to device heats to be detected.
Optionally, the figure of described conductive trench is concentric ring, and described concentric ring comprises a ring at least, and described device to be detected is positioned at the center of described concentric ring conductive trench.
Optionally, also comprise, be positioned at the metal interconnecting layer in described Semiconductor substrate front, be positioned at the redistribution layer at the described Semiconductor substrate back side, one end of described each ring-type conductive trench is connected with metal interconnecting layer electricity, and the other end of described each ring-type conductive trench is connected with redistribution layer electricity.
Optionally, the figure of described conductive trench is spirality, and described device to be detected is positioned at the center of described spirality conductive trench.
Optionally, also comprise, be positioned at the metal interconnecting layer in described Semiconductor substrate front, be positioned at the redistribution layer at the described Semiconductor substrate back side, one end of described helical form conductive trench is connected with metal interconnecting layer electricity, and the other end of described helical form conductive trench is connected with redistribution layer electricity.
Optionally, described metal interconnecting layer is connected with redistribution layer with external control circuit electricity and is connected.
Optionally, be connected with conductive plunger and conductive interconnection layer on described device to be detected, utilize described conductive plunger to be connected described device to be detected to be connected with outer detecting circuit electricity with conductive interconnection layer.
Optionally, the interior electric conducting material of described conductive trench is polysilicon, tungsten or copper.
Optionally, described device to be detected is MOS transistor, memory device, luminescent device, electric capacity, inductance, resistance, conductive interconnection line or integrated circuit.
The embodiment of the present invention also provides a kind of formation method of little heater, comprising:
Semiconductor substrate is provided, described Semiconductor substrate have the front and with the back side of vis-a-vis, form device to be detected on described Semiconductor substrate front, form conductive trench in described Semiconductor substrate, described conductive trench is around described device setting to be detected;
Form metal interconnecting layer on described Semiconductor substrate front, described metal interconnecting layer is connected with conductive trench electricity;
To the described Semiconductor substrate back side grinding, until expose described conductive trench;
At described Semiconductor substrate back side formation redistribution layer, described redistribution layer is connected with the conductive trench electricity that exposes.
Optionally, the concrete formation method of described conductive trench comprises: etching is carried out in described Semiconductor substrate front form the groove with certain figure, form insulating barrier at described trenched side-wall and lower surface, fill full electric conducting material in the groove of described surface of insulating layer, form conductive trench.
Optionally, described electric conducting material is polysilicon, tungsten or copper.
Optionally, the figure of described conductive trench is concentric ring, and described concentric ring comprises a ring at least, and described device to be detected is positioned at the center of described concentric ring conductive trench.
Optionally, the figure of described conductive trench is spirality, and described device to be detected is positioned at the center of described spirality conductive trench.
Optionally, described device to be detected is MOS transistor, memory device, luminescent device, electric capacity, inductance, resistance, conductive interconnection line or integrated circuit.
Optionally, also comprise, after forming device to be detected, form conductive plunger and conductive interconnection layer on described device to be detected, make described device to be detected be connected with outer detecting circuit electricity.
Optionally, described conductive interconnection layer and metal interconnecting layer form in same technique.
Compared with prior art, the embodiment of the present invention has the following advantages:
Little heater of the embodiment of the present invention has the conductive trench that runs through Semiconductor substrate, described conductive trench is used to device heats to be detected, due to described conductive trench around described device setting to be detected, described device to be detected is heated evenly, and by changing the voltage between described two electrodes, control the heat that conductive trench produces, thereby control the temperature of device to be detected.
Description of drawings
Fig. 1 is the designs simplification schematic diagram of the metal interconnecting charge transfer testing apparatus of prior art;
Fig. 2 to Fig. 5 is the structural representation of little heater of the embodiment of the present invention;
Fig. 6 is the schematic flow sheet of formation method of little heater of the embodiment of the present invention;
Fig. 7 to Figure 10 is the cross-sectional view of forming process of little heater of the embodiment of the present invention.
Embodiment
By background technology as can be known, prior art does not have a kind of heater that effectively heats up for device to be detected, make in wafer scale reliability testing process, can treat detection means heats separately, avoid being subject to the impact of other factors, make device to be detected be heated evenly, and temperature is controlled.
Therefore, the inventor has proposed a kind of little heater through research, comprising: Semiconductor substrate, described Semiconductor substrate have the front and with the back side of vis-a-vis, be positioned at the device to be detected on described Semiconductor substrate front; The conductive trench that runs through described Semiconductor substrate, described conductive trench is around described device setting to be detected, and described conductive trench is used to device heats to be detected.Around described device setting to be detected, described device to be detected is heated evenly due to described conductive trench, and by changing the voltage between described two electrodes, controls the heat that conductive trench produces, thereby controls the temperature of device to be detected.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention.Therefore the present invention is not subjected to the restriction of following public concrete enforcement.
The embodiment of the present invention provides a kind of little heater, please in the lump referring to figs. 2 and 3, Fig. 2 is the structural representation of overlooking the visual angle of little heater of the embodiment of the present invention, Fig. 3 is the cross-sectional view of little heater of AA ' line in Fig. 2, specifically comprise: Semiconductor substrate 100, described Semiconductor substrate 100 have positive 101 and with the positive 101 relative back sides 102, be positioned at the device to be detected 110 on described Semiconductor substrate front 101; Be positioned at first interlayer dielectric layer 151 on positive 101 surfaces of described Semiconductor substrate, run through the conductive trench 120 of described Semiconductor substrate 100 and the first interlayer dielectric layer 151, described conductive trench 120 arranges around described device 110 to be detected; Be positioned at the metal interconnecting layer 130 on the top surface of described conductive trench 120 and part the first interlayer dielectric layer 151 surfaces, be positioned at second interlayer dielectric layer 152 on described metal interconnecting layer 130 and the first interlayer dielectric layer 151 surfaces; Be positioned at the redistribution layer 140 on 102 surfaces, the described Semiconductor substrate back side, described redistribution layer 140 is connected with the lower surface of partially conductive groove 120 at least, is positioned at the bottom protective layer 160 on described redistribution layer 140 and 102 surfaces, the Semiconductor substrate back side.
Concrete, described Semiconductor substrate 100 is wherein a kind of of silicon substrate, germanium substrate, silicon-Germanium substrate, silicon carbide substrates, gallium nitride substrate.In the present embodiment, described Semiconductor substrate 100 is silicon substrate.
Described Semiconductor substrate 100 have positive 101 and with the positive 101 relative back sides 102, device 110 to be detected is positioned on described Semiconductor substrate front 101.Described device to be detected 110 is MOS transistor, memory device, luminescent device, electric capacity, inductance, resistance, conductive interconnection line or integrated circuit.In the present embodiment, described device to be detected 110 is MOS transistor, described MOS transistor is positioned at active area 111, and described MOS transistor surface is formed with conductive plunger (not indicating) and conductive interconnection layer (not indicating), be connected with outer detecting circuit with conductive interconnection layer by described conductive plunger, metal interconnecting layer 130 electric isolation in described conductive interconnection layer and little heater make little heater and outer detecting circuit to work alone.Treating detection means when little heater heats, when the temperature of device to be detected rises to determined value, utilizing outer detecting circuit to treat detection means detects, because the conductive trench 120 of little heater heats around device to be detected, make device to be detected be heated evenly, and temperature is controlled, exactly the reliability during detection means high temperature.In the present embodiment, conductive interconnection layer and metal interconnecting layer 130 that device described and to be detected is connected form in same processing step, are conducive to save processing step, reduce costs, in other embodiments, described conductive interconnection layer and metal interconnecting layer 130 also can form in different process.
Described Semiconductor substrate front 101 is formed with the first interlayer dielectric layer 151, and described the first interlayer dielectric layer 151 surfaces are formed with metal interconnecting layer 130, and described metal interconnecting layer 130 surfaces are formed with the second interlayer dielectric layer 152.Also be formed with conductive plunger (not shown) and interconnection layer (not shown) in described the first interlayer dielectric layer 151, the second interlayer dielectric layer 152, make described device to be detected 110 be connected with outer detecting circuit electricity, the metal interconnecting layer 130 of described conductive trench 120 top surfaces is connected with external control circuit electricity.The described Semiconductor substrate back side 102 is formed with redistribution layer 140, and described redistribution layer 140 surfaces are formed with bottom protective layer 160, and for the protection of described redistribution layer 140, described redistribution layer 140 is connected with external control circuit (not shown) electricity.The material of described metal interconnecting layer 130 and redistribution layer 140 is copper or aluminium, and the material of described bottom protective layer is silicon nitride, polyimides etc., and the material of described the first interlayer dielectric layer 151, the second interlayer dielectric layer 152 is silica or low-K dielectric material.
Described conductive trench 120 is described device heats to be detected as the heater block of little heater, makes described device to be detected can be warmed up to certain temperature.In the present embodiment, described conductive trench 120 comprises the electric conducting material 122 that is positioned at groove and the insulating barrier 121 that is positioned at electric conducting material 122 sidewalls.Described conductive trench 120 runs through described Semiconductor substrate 100 and the first interlayer dielectric layer 151, the top surface of described conductive trench 120 is connected with metal interconnecting layer 130 electricity, the lower surface of described conductive trench 120 is connected with redistribution layer 140 electricity, and described metal interconnecting layer 130 is connected with redistribution layer and is connected with external control circuit electricity.In embodiments of the present invention, the top of described conductive trench 120 is the part of close metal interconnecting layer 130 in conductive trench 120, and the bottom of described conductive trench 120 is 120 parts near redistribution layers 140 in conductive trench.In other embodiments, described conductive trench runs through described Semiconductor substrate, and be connected with metal interconnecting layer electricity by conductive plunger in the Semiconductor substrate front, the conductive trench surface that is positioned at the Semiconductor substrate back side is connected with redistribution layer electricity, and described metal interconnecting layer is connected with external control circuit electricity with redistribution layer.Described metal interconnecting layer 130 and redistribution layer 140 are as two electrodes of external control circuit, by apply voltage between described two electrodes, make described conductive trench 120 generation currents and produce heat, making described device to be detected be warmed up to certain temperature.For the heating properties that makes described conductive trench 120 better, the formation technique of described conductive trench 120 and prior art coupling, reduce production costs, the material of described conductive trench 120 is wherein a kind of of polysilicon, tungsten, copper, and described polysilicon doping has foreign ion or not doped with foreign ion.Wherein, because the resistivity of unadulterated polysilicon is 10m Ω cm, the resistivity of tungsten is 6 μ Ω cm, be far longer than the resistivity 10n Ω cm of copper, and tungsten has deelectric transferred ability preferably, therefore, in the present embodiment, the material of described conductive trench 120 is unadulterated polysilicon or tungsten.
In the present embodiment, please refer to Fig. 2, the figure of described conductive trench 120 is concentric ring, the ring-type conductive trench 120 that several shapes are identical, radius is different arranges around described device 110 to be detected, and the center of the ring-type conductive trench 120 of described different radii is identical, and the position at described center is corresponding with the position of device 110 to be detected.Described concentric ring be shaped as circle or square etc., make device to be detected to be heated evenly, improve the accuracy of final measurement.The quantity of the ring-type conductive trench 120 of described concentric ring is at least one, and in the present embodiment, the quantity of the ring-type conductive trench 120 of described concentric ring is three.
Because the sidewall of described conductive trench 120 is formed with insulating barrier 121, electric isolation between the ring-type conductive trench 120 of different radii, and the semiconductor substrate region between different ring-type conductive trench is formed with fleet plough groove isolation structure 103, to improve the electric isolation effect.In other embodiments, also can not form fleet plough groove isolation structure, only utilize insulating barrier to carry out electric isolation.Due to electric isolation between the ring-type conductive trench 120 of different radii, described metal interconnecting layer 130, redistribution layer 140 are connected with ring-type conductive trench 120 electricity of each different radii, thereby can allow the ring-type conductive trench 120 of different radii all produce heat, be device heats to be detected.In other embodiments, the ring-type conductive trench of described different radii connects from different metal interconnecting layers, redistribution layer electricity, by adjusting the heat of each ring-type conductive trench generation, can control more accurately the temperature of device to be detected.
In another embodiment, please in the lump with reference to figure 4 and Fig. 5, Fig. 4 is the structural representation of overlooking the visual angle of little heater of the embodiment of the present invention, and Fig. 5 is the cross-sectional view of little heater of BB ' line in Fig. 4.The electric conducting material 122 that described conductive trench 120 ' comprise is positioned at groove ' and be positioned at the insulating barrier 121 of electric conducting material 122 ' sidewall '.Described conductive trench 120 ' figure be spirality, described spirality conductive trench 120 ' arrange around described structure 110 to be detected, and described structure to be detected 110 be positioned at described spirality conductive trench 120 ' the center, make described device to be detected 110 be heated evenly.Described spirality is similar round spiral or class rectangular coil, wherein, the conductive trench 120 in Fig. 4 ' figure be the similar round spiral.
Described spirality conductive trench 120 ' sidewall be formed with insulating barrier 121 ', make described spirality conductive trench 120 ' with Semiconductor substrate 100 electric isolation, and the semiconductor substrate region between the helix of spirality conductive trench is formed with fleet plough groove isolation structure 103, can improve the electric isolation effect.In other embodiments, also can not form fleet plough groove isolation structure, only utilize insulating barrier to carry out electric isolation.Because whole spirality conductive trench 120 ' be all electricity connects, described metal interconnecting layer 130, redistribution layer 140 are connected with at least a portion electricity on spirality conductive trench 120 ' surface, thereby described external control circuit can be applied to voltage two surfaces, up and down, make described spirality conductive trench 120 ' generation heat, be device heats to be detected.
The embodiment of the present invention also provides a kind of formation method of described little heater, please refer to Fig. 6, and the schematic flow sheet for the formation method of described little heater specifically comprises:
Step S101, Semiconductor substrate is provided, described Semiconductor substrate have the front and with the back side of vis-a-vis, form device to be detected on described Semiconductor substrate front, form conductive trench in described Semiconductor substrate, described conductive trench is around described device setting to be detected;
Step S102 forms metal interconnecting layer on described Semiconductor substrate front, make described metal interconnecting layer be connected with conductive trench electricity;
Step S103 is to the described Semiconductor substrate back side grinding, until expose described conductive trench;
Step S104, at described Semiconductor substrate back side formation redistribution layer, described redistribution layer is connected with the conductive trench electricity that exposes.
Fig. 7 to Figure 10 is the cross-sectional view of forming process of little heater of the embodiment of the present invention.
Concrete, please refer to Fig. 7, Semiconductor substrate 100 is provided, described Semiconductor substrate 100 has front 101 and the back sides 102 relative with front 101, form device 110 to be detected on described Semiconductor substrate front 101, form the first interlayer dielectric layer 151 on described device 110 to be detected and Semiconductor substrate front 101, in described Semiconductor substrate 100 and the interior formation conductive trench 120 of the first interlayer dielectric layer 151, described conductive trench 120 arranges around described device 110 to be detected.
Described Semiconductor substrate 100 is wherein a kind of of silicon substrate, germanium substrate, silicon-Germanium substrate, silicon carbide substrates, gallium nitride substrate.In the present embodiment, described Semiconductor substrate 100 is silicon substrate.Also be formed with fleet plough groove isolation structure 103 in described Semiconductor substrate 100, described fleet plough groove isolation structure 103 is between the conductive trench of follow-up formation, be used to the conductive trench of follow-up formation to carry out electric isolation, in other embodiments, also can not form fleet plough groove isolation structure 103, only utilize the insulating barrier of conductive trench sidewall to carry out electric isolation.
Described device to be detected 110 is positioned on described Semiconductor substrate front 101.Described device to be detected 110 is MOS transistor, memory device, luminescent device, electric capacity, inductance, resistance, conductive interconnection line or integrated circuit.In the present embodiment, described device to be detected 110 is MOS transistor, described MOS transistor is positioned at active area 111, and described MOS transistor is connected with outer detecting circuit with conductive interconnection layer (not indicating) by its surperficial conductive plunger (not indicating).Because the formation method of described device to be detected is those skilled in the art's known technology, be not described further at this.
In the present embodiment, after forming device 110 to be detected on described Semiconductor substrate 100, at described Semiconductor substrate 100 surface formation the first interlayer dielectric layers 151, described interlayer dielectric layer 150 covers described device 110 to be detected, and be formed with conductive plunger (not indicating) and conductive interconnection layer (not indicating) in described the first interlayer dielectric layer 151, outer detecting circuit utilizes described conductive plunger and conductive interconnection layer to treat detection means 110 and detects.
Described conductive trench 120 runs through part semiconductor substrate 100 and the first interlayer dielectric layer 151, the concrete technology that forms described conductive trench 120 comprises: at described the first interlayer dielectric layer 151 surface formation mask layers (not shown), be formed with the opening corresponding with the figure of conductive trench 120 (not shown) in described mask layer, described mask layer is wherein a kind of of hard mask layer, photoresist layer; Take described mask layer with opening as mask, described Semiconductor substrate 100 is carried out dry etching, form groove (not shown), the figure of described groove is concentric ring or spirality; Utilize depositing operation to form insulating barrier 121 in described trenched side-wall and bottom, described insulating barrier 121 makes conductive trench 120 and Semiconductor substrate 100 electric isolation; Utilize depositing operation to form electric conducting material 122 in the groove on described insulating barrier 121 surfaces, and utilize chemical mechanical milling tech that described electric conducting material 122 is ground, until expose described the first interlayer dielectric layer 151 surfaces, described insulating barrier 121 and the electric conducting material 122 that is positioned at groove forms conductive trench 120.The material of described insulating barrier 121 is silicon nitride or silica.For the heating properties that makes described conductive trench 120 better, the formation technique of described conductive trench 120 and prior art coupling, reduce production costs, described electric conducting material 122 is wherein a kind of of polysilicon, tungsten, copper, and described polysilicon doping has foreign ion or not doped with foreign ion.Wherein, because the resistivity of unadulterated polysilicon is 10m Ω cm, the resistivity of tungsten is 6 μ Ω cm, be far longer than the resistivity 10n Ω cm of copper, and tungsten has deelectric transferred ability preferably, therefore, in the present embodiment, described electric conducting material 122 is unadulterated polysilicon or tungsten.
In other embodiments, before forming device to be detected, form conductive trench in described Semiconductor substrate, after forming the first interlayer dielectric layer, form conductive plunger in described the first interlayer dielectric layer, described conductive trench utilizes conductive plunger to be connected with the metal interconnecting layer electricity of follow-up formation.
Please refer to Fig. 8, the first interlayer dielectric layer 151 surfaces on described Semiconductor substrate front 101 form metal interconnecting layers 130, make described metal interconnecting layer 130 be connected with conductive trench 120 electricity, at described metal interconnecting layer 130 and first interlayer dielectric layer 151 surface formation the second interlayer dielectric layers 152.
Utilize physical gas-phase deposition or electroplating technology to form metal interconnecting layers 130 on described the first interlayer dielectric layer 151 surface, and described metal interconnecting layer 130 is connected with the surperficial electricity of conductive trench 120 on being positioned at Semiconductor substrate front 101.The material of described metal interconnecting layer 130 is aluminium or copper.When the figure of described conductive trench is concentric ring, described metal interconnecting layer is connected with the surperficial electricity of the ring-type conductive trench of each different radii, when the figure of described conductive trench was spirality, described metal interconnecting layer was connected with the surperficial electricity of at least a portion of spirality conductive trench.
Wherein, in the present embodiment, the conductive interconnection layer that device described and to be detected is connected (not indicating) forms in same technique with metal interconnecting layer 130, be conducive to save processing step, reduce costs, in other embodiments, described conductive interconnection layer and metal interconnecting layer 130 also can form in different process.
After forming described metal interconnecting layer 130, surface at described the first interlayer dielectric layer 151 and metal interconnecting layer 130 forms the second interlayer dielectric layer 152, also be formed with some conductive plunger (not shown) and interconnection layer (not shown) in described second layer dielectric layer 152, described device to be detected is connected with outer detecting circuit, described metal interconnecting layer 130 is connected with external control circuit.
Please refer to Fig. 9, the described Semiconductor substrate back side 102 is ground, until expose described conductive trench 120.
The technique that described Semiconductor substrate 100 is ground attenuate is specially mechanical lapping, cmp, plasma etching several hybrid technique wherein, makes electric conducting material 120 in conductive trench 120 be exposed to the back side 102 of Semiconductor substrate 100.Due to the known technology of the technique that Semiconductor substrate is ground for those skilled in the art, be not described further at this.
Please refer to Figure 10,102 form redistribution layers 140 at the described Semiconductor substrate back side, and described redistribution layer 140 is connected with conductive trench 120 electricity that expose, the surface formation bottom protective layer 160 at described redistribution layer 140 and the Semiconductor substrate back side 102.
Utilize physical gas-phase deposition or electroplating technology to form redistribution layer 140 on 102 surfaces, the described Semiconductor substrate back side, and described redistribution layer 140 is connected with conductive trench 120 electricity.The material of described redistribution layer 140 is aluminium or copper.When the figure of described conductive trench is concentric ring, the surface electricity that is positioned at the Semiconductor substrate back side of the ring-type conductive trench of described redistribution layer and each different radii is connected, when the figure of described conductive trench was spirality, described redistribution layer was connected with the surperficial electricity of at least a portion of spirality conductive trench.Described redistribution layer 140 is connected with external control circuit electricity.After forming described redistribution layer 140, form bottom protective layer 160 on the surface at described redistribution layer 140 and the Semiconductor substrate back side 102, described bottom protective layer 160 use with protect redistribution layer 140.The material of described bottom protective layer is silicon nitride, polyimides etc.
because little heater of the embodiment of the present invention has the conductive trench that runs through Semiconductor substrate, the described conductive trench surface that is positioned at the Semiconductor substrate front is connected with external control circuit, the described conductive trench surface that is positioned at the Semiconductor substrate back side is connected with external control circuit, described external control circuit will be positioned at the conductive trench surface in Semiconductor substrate front as an electrode, to be positioned at the conductive trench surface at the Semiconductor substrate back side as another electrode, by apply voltage between two electrodes, make described conductive trench produce heat, due to described conductive trench around described device setting to be detected, described device to be detected is heated evenly, and by changing the voltage between described two electrodes, control the heat that conductive trench produces, thereby can independently control the temperature of device to be detected, be not subjected to the impact of other factors.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (17)
1. a little heater, is characterized in that, comprising:
Semiconductor substrate, described Semiconductor substrate have the front and with the back side of vis-a-vis, be positioned at the device to be detected on described Semiconductor substrate front;
The conductive trench that runs through described Semiconductor substrate, described conductive trench is around described device setting to be detected, and described conductive trench is used to device heats to be detected.
2. little heater as claimed in claim 1, is characterized in that, the figure of described conductive trench is concentric ring, and described concentric ring comprises a ring at least, and described device to be detected is positioned at the center of described concentric ring conductive trench.
3. little heater as claimed in claim 2, it is characterized in that, also comprise, be positioned at the metal interconnecting layer in described Semiconductor substrate front, be positioned at the redistribution layer at the described Semiconductor substrate back side, one end of described each ring-type conductive trench is connected with metal interconnecting layer electricity, and the other end of described each ring-type conductive trench is connected with redistribution layer electricity.
4. little heater as claimed in claim 1, is characterized in that, the figure of described conductive trench is spirality, and described device to be detected is positioned at the center of described spirality conductive trench.
5. little heater as claimed in claim 4, it is characterized in that, also comprise, be positioned at the metal interconnecting layer in described Semiconductor substrate front, be positioned at the redistribution layer at the described Semiconductor substrate back side, one end of described helical form conductive trench is connected with metal interconnecting layer electricity, and the other end of described helical form conductive trench is connected with redistribution layer electricity.
6. little heater as described in claim 3 or 5, is characterized in that, described metal interconnecting layer is connected with redistribution layer with external control circuit electricity and is connected.
7. little heater as claimed in claim 1, is characterized in that, is connected with conductive plunger and conductive interconnection layer on described device to be detected, utilizes described conductive plunger to be connected described device to be detected to be connected with outer detecting circuit electricity with conductive interconnection layer.
8. little heater as claimed in claim 1, is characterized in that, the electric conducting material in described conductive trench is polysilicon, tungsten or copper.
9. little heater as claimed in claim 1, is characterized in that, described device to be detected is MOS transistor, memory device, luminescent device, electric capacity, inductance, resistance, conductive interconnection line or integrated circuit.
10. the formation method of a little heater, is characterized in that, comprising:
Semiconductor substrate is provided, described Semiconductor substrate have the front and with the back side of vis-a-vis, form device to be detected on described Semiconductor substrate front, form conductive trench in described Semiconductor substrate, described conductive trench is around described device setting to be detected;
Form metal interconnecting layer on described Semiconductor substrate front, described metal interconnecting layer is connected with conductive trench electricity;
To the described Semiconductor substrate back side grinding, until expose described conductive trench;
At described Semiconductor substrate back side formation redistribution layer, described redistribution layer is connected with the conductive trench electricity that exposes.
11. the formation method of little heater as claimed in claim 10, it is characterized in that, the concrete formation method of described conductive trench comprises: etching is carried out in described Semiconductor substrate front form the groove with certain figure, form insulating barrier at described trenched side-wall and lower surface, fill full electric conducting material in the groove of described surface of insulating layer, form conductive trench.
12. the formation method of little heater as claimed in claim 11 is characterized in that, described electric conducting material is polysilicon, tungsten or copper.
13. the formation method of little heater as claimed in claim 10 is characterized in that, the figure of described conductive trench is concentric ring, and described concentric ring comprises a ring at least, and described device to be detected is positioned at the center of described concentric ring conductive trench.
14. the formation method of little heater as claimed in claim 10 is characterized in that, the figure of described conductive trench is spirality, and described device to be detected is positioned at the center of described spirality conductive trench.
15. the formation method of little heater as claimed in claim 10 is characterized in that, described device to be detected is MOS transistor, memory device, luminescent device, electric capacity, inductance, resistance, conductive interconnection line or integrated circuit.
16. the formation method of little heater as claimed in claim 10, it is characterized in that, also comprise, after forming device to be detected, form conductive plunger and conductive interconnection layer on described device to be detected, make described device to be detected be connected with outer detecting circuit electricity.
17. the formation method of little heater as claimed in claim 16 is characterized in that described conductive interconnection layer and metal interconnecting layer form in same technique.
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| CN201110382857.0A CN103137610B (en) | 2011-11-25 | 2011-11-25 | Micro-heating device and forming method |
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| CN201110382857.0A CN103137610B (en) | 2011-11-25 | 2011-11-25 | Micro-heating device and forming method |
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| CN103137610B CN103137610B (en) | 2015-07-08 |
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| CN108375722A (en) * | 2018-01-31 | 2018-08-07 | 上海华力微电子有限公司 | A kind of test structure and its test method for reliability test of independent temperature control |
| CN111584459A (en) * | 2014-09-12 | 2020-08-25 | 高通股份有限公司 | Integrated circuit IC fabricated using mid-process MOL with metal line local interconnects using extended vias and related methods |
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| CN103137610B (en) | 2015-07-08 |
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