CN108365103A - A kind of application of boracic hole dopant in perovskite solar cell hole transmission layer - Google Patents
A kind of application of boracic hole dopant in perovskite solar cell hole transmission layer Download PDFInfo
- Publication number
- CN108365103A CN108365103A CN201810154042.9A CN201810154042A CN108365103A CN 108365103 A CN108365103 A CN 108365103A CN 201810154042 A CN201810154042 A CN 201810154042A CN 108365103 A CN108365103 A CN 108365103A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- hole
- pentafluorophenyl group
- perovskite solar
- boracic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The present invention relates to a kind of boracic hole dopant and its applications in perovskite solar cell hole transmission layer, belong to photoelectron material and devices field.The invention is using 4 isopropyl 4' methyldiphenyl bases iodine, four (pentafluorophenyl group) borate or three (pentafluorophenyl group) borines as dopant, it is added in hole mobile material according to mass ratio 1% 15%, it is formed a film on the perovskite thin film of forward structure perovskite solar cell using spin coating technique, is used as the hole transmission layer of forward structure perovskite solar cell.
Description
Technical field
The present invention is one kind with four (pentafluorophenyl group) borate of 4- isopropyl -4'- methyldiphenyl bases iodine or three (phenyl-pentafluorides
Base) borine adulterates application of the hole mobile material in perovskite solar cell respectively, and especially one kind is with 4- isopropyls-
Four (pentafluorophenyl group) borate of 4'- methyldiphenyl bases iodine or three (pentafluorophenyl group) borines adulterate respectively Poly-TPD, PTAA or
TFB is used as forward structure perovskite solar cell hole mobile material.
Background technology
With the continuous development of society, the environmental problem that energy crisis and traditional fossil energy are brought is increasingly by people
Attention, expand environmentally friendly and regenerative resource it is extremely urgent.Solar energy is as renewable and clean resource
It is concerned by people, wherein development solar cell is one of the important channel using solar energy.Current main extensive use
Be silica-based solar cell, but silica-based solar cell manufacturing cost is higher, and energy consumption greatly limits silicon substrate than more serious
The large-scale application of solar cell.
Latest find, emerging hybrid inorganic-organic perovskite solar cell have width absorb, be simple to manufacture, it is low at
Originally, flexible the characteristics of preparing the world can be received rapidly to attract attention, come out from 2009 by 2017, a few years photoelectric conversion is imitated
Rate is promoted from 3.8% to 22.7% with surprising rapidity, it is already possible to be matched in excellence or beauty with silicon based cells.Perovskite solar cell has
Two kinds of device architectures are forward structure and reverse geometry respectively.Li is commonly used wherein in forward structure perovskite solar cell
The Spiro-OMeTAD of salt dopping is as hole mobile material, however Spiro-OMeTAD needs the enough oxygen in oxygen atmosphere
Change, this is unfavorable for preparing efficient perovskite solar cell.In addition, the height of a batch stable structure such as Poly-TPD, PTAA and TFB
Molecular material is used as perovskite solar cell hole mobile material successively, but hole mobility is low again limits these materials
Application.The present invention using one kind with four (pentafluorophenyl group) borate of 4- isopropyl -4'- methyldiphenyl bases iodine and/or
(pentafluorophenyl group) borine adulterates Poly-TPD, PTAA or TFB respectively, improves hole mobility to a certain extent so that calcium
Titanium ore solar battery efficiency, which has, to be obviously improved.
Invention content
Present invention solves the technical problem that being：It proposes a kind of for applied to perovskite solar cell hole mobile material
Hole mobility is low, fill factor is small low with efficiency, using four (pentafluorophenyl group) boron of 4- isopropyl -4'- methyldiphenyl bases iodine
Hydrochlorate or three (pentafluorophenyl group) borines are to its appropriate doping, to improve hole mobility, the filling of perovskite solar cell
The factor and efficiency.
In order to solve the above-mentioned technical problem, technical solution proposed by the present invention is：A kind of boracic hole dopant is in calcium titanium
Application in mine solar cell hole transmission layer, in common high-molecular hole conduction material Poly-TPD, PTAA or TFB
Add certain mass than four (pentafluorophenyl group) borate of 4- isopropyl -4'- methyldiphenyl bases iodine or three (pentafluorophenyl group) boron
Alkane.
Preferably, (1) prepares Poly-TPD, PTAA or TFB solution of 10mg/mL using chlorobenzene as solvent respectively；
(2) 1 is added respectively according to the mass ratio of solute respectively when solution described in preparation (1)：0；1:0.01；1:
0.02；1:0.03；1:0.04；1:0.05；1:0.10 or 1:0.15 four (phenyl-pentafluoride of 4- isopropyl -4'- methyldiphenyl bases iodine
Base) borate or three (pentafluorophenyl group) borines.
Preferably, above-mentioned solution is placed on magnetic stirring apparatus under room temperature and stirs 12h.
The preparation method of the perovskite solar cell：
(1) SnO is prepared with spin-coating method in clean transparent ito glass substrate2Electron transfer layer and perovskite thin film；
(2) the hole mobile material solution after adulterating different proportion is spin-coated on 3000rpm on perovskite thin film, spin coating
It 30s and is allowed to spontaneously dry at room temperature；
(3) with vacuum vapour deposition vapor deposition 5nm MoO on the above-mentioned film prepared3Film makees decorative layer and 100nm gold
Belong to Au electrodes.
Beneficial effects of the present invention：
Distinguished with four (pentafluorophenyl group) borate of 4- isopropyl -4'- methyldiphenyl bases iodine or three (pentafluorophenyl group) borines
Poly-TPD, PTAA or TFB hole mobile material are adulterated, you can the spy for avoiding Spiro-OMeTAD from being needed to be oxidized in doping
Point, and the raising of hole mobility may be implemented, perovskite can be greatly promoted when being applied to perovskite solar cell
The fill factor and efficiency of solar cell.
Description of the drawings
The present invention is described further below in conjunction with the accompanying drawings.
Fig. 1 is the perovskite solar battery structure schematic diagram of the present invention
Fig. 2 is that the J-V of four (pentafluorophenyl group) boric acid salt dopping Poly-TPD of 4- isopropyl -4'- methyldiphenyl bases iodine is bent
Line
Fig. 3 is the J-V curves of four (pentafluorophenyl group) boric acid salt dopping PTAA of 4- isopropyl -4'- methyldiphenyl bases iodine
Fig. 4 is the J-V curves of four (pentafluorophenyl group) boric acid salt dopping TFB of 4- isopropyl -4'- methyldiphenyl bases iodine
Fig. 5 is the J-V curves of three (pentafluorophenyl group) borane doping Poly-TPD
Fig. 6 is the J-V curves of three (pentafluorophenyl group) borane doping PTAA
Fig. 7 is the J-V curves of three (pentafluorophenyl group) borane doping TFB
Specific implementation mode
Embodiment
The present embodiment is that boracic hole dopant adulterates application of the hole mobile material in perovskite solar cell, tool
Body step, including：
Step 1) cleans the ITO electro-conductive glass cut, is sequentially followed successively by ethyl alcohol, cleaning agent is added in ultra-pure water, super
Each ultrasound 10min in pure water, ethyl alcohol.And it is dried up with nitrogen, obtains clean electro-conductive glass substrate.
Clean electro-conductive glass substrate in previous step UV-O3 is handled 15min by step 2).
The SnO that mass fraction is 15% by step 3)2Nanometer glue spend ionized water dilute 6 times, in air with
4000rpm is spin-coated on UV-O in step 2)3On processed ito glass, spin coating 30s, after place it in 150 DEG C of thermal station and anneal
30min。
Step 4) weighs the in the mixed solvent (V of 461mg PbI2 and 159mg MAI dissolving and 1mL DMF and DMSODMF:
VDMSO=4:1) 60 DEG C of stirring 2h are to being completely dissolved to obtain perovskite precursor solution.
The SnO that step 5) will be prepared in step 3)2Fine and close layer film handles 15min with UV-O3.
Perovskite precursor solution in step 4) is uniformly dropped in step 5) UV-O by step 6)3Processed SnO2
On film, the first step with 1000rpm spin coating 10s, after again with 5000rpm spin coating 30s, second step is added dropwise 250 when being spin-coated to 10s
μ L chlorobenzenes make anti-solvent, and anneal after spin coating in 100 DEG C of thermal station 2min, is operated in glove box.
Step 7) difference 10mg Poly-TPD, PTAA and TFB, then 0 is added respectively according to the mass ratio of solute respectively；1:
0.01；1:0.02；1:0.03；1:0.04；1:0.05；1:0.10 and 1:0.15 4- isopropyl -4'- methyldiphenyl bases iodine four
(pentafluorophenyl group) borate or three (pentafluorophenyl group) borines.
1mL chlorobenzenes are added as solvent in step 8), are placed on magnetic stirring apparatus stirring 12h under room temperature and obtain hole transport
Layer precursor solution.
Prepared hole transmission layer precursor solution in step 7) and step 8) is spin-coated on calcium by step 9) with 3000rpm
On titanium ore film, spin coating 30s obtains hole transmission layer, which operates in glove box.
Above-mentioned device is transferred in vacuum evaporation cabin by step 10), and 5nm MoO are deposited respectively in high vacuum conditions3With
100nm Au。
Step 11) (AM1.5G illumination) under standard test condition, the battery device energy conversion effect prepared by this example
Rate has been summarised in following table：
1 4- isopropyl -4'- methyldiphenyl bases iodine of table, four (pentafluorophenyl group) boric acid salt dopping Poly-TPD
2 4- isopropyl -4'- methyldiphenyl bases iodine of table, four (pentafluorophenyl group) boric acid salt dopping PTAA
3 4- isopropyl -4'- methyldiphenyl bases iodine of table, four (pentafluorophenyl group) boric acid salt dopping TFB
(pentafluorophenyl group) borane doping of table 4 three Poly-TPD
(pentafluorophenyl group) borane doping of table 5 three PTAA
(pentafluorophenyl group) borane doping of table 6 three TFB
The present invention's is not limited to the above embodiment the specific technical solution, all technologies formed using equivalent replacement
Scheme be the present invention claims protection domain.
Claims (4)
1. a kind of application of boracic hole dopant in perovskite solar cell hole transmission layer, it is characterised in that：Normal
In high-molecular hole conduction material Poly-TPD, PTAA or TFB for seeing add certain mass than 4- isopropyl -4'- methyl two
(pentafluorophenyl group) borate of phenyl-iodide four or three (pentafluorophenyl group) borines.
2. application of the boracic hole dopant according to claim 1 in perovskite solar cell hole transmission layer,
It is characterized in that：
(1) Poly-TPD, PTAA or TFB solution of 10mg/mL is prepared using chlorobenzene as solvent respectively；
(2) 1 is added respectively according to the mass ratio of solute respectively when solution described in preparation (1)：0；1:0.01；1:0.02；1:
0.03；1:0.04；1:0.05；1:0.10 or 1:0.15 four (pentafluorophenyl group) boric acid of 4- isopropyl -4'- methyldiphenyl bases iodine
Salt or three (pentafluorophenyl group) borines.
3. application of the boracic hole dopant according to claim 1 in perovskite solar cell hole transmission layer,
It is characterized in that：Above-mentioned solution is placed on magnetic stirring apparatus under room temperature and stirs 12h.
4. application of the boracic hole dopant according to claim 1 in perovskite solar cell hole transmission layer,
It is characterized in that
(1) SnO is prepared with spin-coating method in clean transparent ito glass substrate2Electron transfer layer and perovskite thin film；
(2) the hole mobile material solution after adulterating different proportion is spin-coated on 3000rpm on perovskite thin film, spin coating 30s
And it is allowed to spontaneously dry at room temperature；
(3) with vacuum vapour deposition vapor deposition 5nm MoO on the above-mentioned film prepared3Film makees decorative layer and 100nm metals Au electricity
Pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810154042.9A CN108365103A (en) | 2018-02-22 | 2018-02-22 | A kind of application of boracic hole dopant in perovskite solar cell hole transmission layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810154042.9A CN108365103A (en) | 2018-02-22 | 2018-02-22 | A kind of application of boracic hole dopant in perovskite solar cell hole transmission layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108365103A true CN108365103A (en) | 2018-08-03 |
Family
ID=63002563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810154042.9A Pending CN108365103A (en) | 2018-02-22 | 2018-02-22 | A kind of application of boracic hole dopant in perovskite solar cell hole transmission layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108365103A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109888105A (en) * | 2019-03-06 | 2019-06-14 | 陕西师范大学 | A kind of new passivation perovskite solar cell and preparation method thereof |
| CN111463349A (en) * | 2019-06-29 | 2020-07-28 | 杭州纤纳光电科技有限公司 | Method for improving stability of perovskite solar cell |
| WO2020158876A1 (en) * | 2019-02-01 | 2020-08-06 | Ricoh Company, Ltd. | Photoelectric conversion element, solar cell module, power supply module, and electronic device |
| CN112635677A (en) * | 2020-12-22 | 2021-04-09 | 吉林大学 | Double-layer anode buffer layer polymer solar cell based on BCF modification and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609662A (en) * | 2015-12-22 | 2016-05-25 | 成都新柯力化工科技有限公司 | Preparation method of special hole transport material for perovskite photovoltaic material |
-
2018
- 2018-02-22 CN CN201810154042.9A patent/CN108365103A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609662A (en) * | 2015-12-22 | 2016-05-25 | 成都新柯力化工科技有限公司 | Preparation method of special hole transport material for perovskite photovoltaic material |
Non-Patent Citations (2)
| Title |
|---|
| CHE-EN TSAI等: "Triarylamine-based crosslinked hole-transporting material with an ionic dopant for high-performance PEDOT:PSS-free polymer solar cells", 《JOURNAL OF MATERIALS CHEMISTRY C》 * |
| TENGLING YE等: "Improved Performance and Reproducibility of Perovskite Solar Cells by Well-Soluble Tris(pentafluorophenyl)borane as a p‑Type Dopant", 《APPLIED MATERIALS&INTERFACES》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020158876A1 (en) * | 2019-02-01 | 2020-08-06 | Ricoh Company, Ltd. | Photoelectric conversion element, solar cell module, power supply module, and electronic device |
| CN113396491A (en) * | 2019-02-01 | 2021-09-14 | 株式会社理光 | Photoelectric conversion element, solar cell module, power supply module, and electronic device |
| CN109888105A (en) * | 2019-03-06 | 2019-06-14 | 陕西师范大学 | A kind of new passivation perovskite solar cell and preparation method thereof |
| CN111463349A (en) * | 2019-06-29 | 2020-07-28 | 杭州纤纳光电科技有限公司 | Method for improving stability of perovskite solar cell |
| CN112635677A (en) * | 2020-12-22 | 2021-04-09 | 吉林大学 | Double-layer anode buffer layer polymer solar cell based on BCF modification and preparation method thereof |
| CN112635677B (en) * | 2020-12-22 | 2022-06-21 | 吉林大学 | Double-layer anode buffer layer polymer solar cell based on BCF modification and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108365103A (en) | A kind of application of boracic hole dopant in perovskite solar cell hole transmission layer | |
| CN106384785B (en) | A kind of tin dope methyl ammonium lead iodide perovskite solar cell | |
| CN107240643B (en) | Bromo element adulterates methylamine lead iodine perovskite solar battery and preparation method thereof | |
| CN108232016B (en) | Perovskite solar cell based on cellulose modified hole transport layer | |
| CN102024906B (en) | Organic solar cell structure based on oxide doped organic material | |
| CN103296211B (en) | Heterojunction solar battery device of organic-two dimensional crystal-inorganic hybridization and preparation method thereof | |
| CN201247782Y (en) | High-efficiency polymer solar battery | |
| CN109802041A (en) | A kind of non-fullerene perovskite planar heterojunction solar battery and preparation method | |
| CN109980090A (en) | A kind of efficient ternary organic photovoltaic cell and preparation method thereof | |
| CN110098335A (en) | A kind of perovskite solar battery and preparation method thereof based on ionic liquid modification hole transmission layer | |
| CN108666424B (en) | Perovskite solar cell prepared by taking methylamine acetate room-temperature molten salt as green solvent, and method and application thereof | |
| CN111081883B (en) | Efficient and stable planar heterojunction perovskite solar cell and preparation method | |
| CN105280818B (en) | A kind of planar heterojunction perovskite solar cell of stabilization and preparation method thereof | |
| CN108550699A (en) | A kind of ternary organic solar energy cell structure and preparation method thereof based on the non-fullerene acceptor of small molecule | |
| CN106898698A (en) | It is a kind of using aluminium and sodium chloride as inverse organic solar cell of cathode buffer layer and preparation method thereof | |
| CN103066209B (en) | A kind of solar cell and preparation method thereof | |
| CN106410041B (en) | Polymer solar battery and preparation method | |
| CN112885967B (en) | Double-layer organic solar cell based on delayed fluorescent material and preparation method | |
| CN108461635B (en) | A kind of method and its application of boron compound surface modification perovskite thin film | |
| CN108206240A (en) | Efficient organic solar batteries and preparation method | |
| CN104409637B (en) | Solar battery structure based on trapezoidal aluminium nanometer gate-shaped electrode and preparation method thereof | |
| CN112968130A (en) | Flexible solar cell device and preparation method thereof | |
| CN203165951U (en) | Solar battery | |
| CN104253216A (en) | Solar cell device and production method thereof | |
| CN111599925B (en) | Solar cell with dimethyl tin bis (formate) N-type semiconductor film as electron transport layer and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180803 |
|
| WD01 | Invention patent application deemed withdrawn after publication |