CN111463349A - Method for improving stability of perovskite solar cell - Google Patents
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Abstract
The invention relates to a method for improving the stability of a perovskite solar cell, wherein the perovskite solar cell comprises an electrode layer, an electron transport layer, a hole transport layer and a perovskite thin film layer, a stabilizer is added in the process of preparing the perovskite thin film layer, and the stabilizer is a compound with an F-B structure, wherein F is halogen fluorine, and B is a chemical structure with a strong electron-withdrawing effect. The invention uses the additive in the perovskite material to stabilize iodine in the perovskite material and inhibit iodine ion movement, and provides the perovskite thin film with the active layer doped with the additive and the application of the perovskite thin film in the solar cell, thereby improving the long-term stability of the perovskite thin film solar cell.
Description
Technical Field
The invention belongs to the technical field of perovskite solar cell preparation, and particularly relates to a method for improving the stability of a perovskite solar cell.
Background
In recent years, perovskite solar cells having ABX with an organic metal halide as a light-absorbing layer have attracted much attention3Type cuboctahedral crystal structure. The thin-film solar cell prepared from the perovskite material has the advantages of simple and convenient process, low production cost, stability and high conversion rate, the photoelectric conversion efficiency is improved from 3.8% to more than 23% from 2009 to now, and the thin-film solar cell is higher than a commercial crystalline silicon solar cell and has a larger cost advantage.
However, the stability of the iodine atom bound to the organic functional group in the perovskite material is poor, and chemical bonds are easily broken to become free iodide ions. Under the action of the photoelectric field, iodide ions gradually migrate to the interface, so that the degradation of the perovskite material is accelerated, and the performance of the device is deteriorated.
Disclosure of Invention
The invention aims to provide a method for improving the stability of a perovskite solar cell, which uses an additive in a perovskite material to stabilize iodine in the perovskite material and inhibit iodine ion movement, and provides a perovskite thin film with an active layer doped with the additive and a method for improving the long-term stability of the perovskite thin film solar cell by applying the perovskite thin film to the solar cell.
The invention is realized in such a way that the method for improving the stability of the perovskite solar cell is provided, the perovskite solar cell comprises an electrode layer, an electron transport layer, a hole transport layer and a perovskite thin film layer, and a stabilizer is added in the process of preparing the perovskite thin film layer, wherein the stabilizer is a compound with an F-B structure, F refers to halogen fluorine, and B refers to a chemical structure with a strong electron-withdrawing effect.
Further, in the F-B structure of the stabilizer, B is a compound containing-N+R3、-NO2、-CN、-COOH、-COOR、-C＝O、-SO3H、-CF3Any of the groups.
Further, the stabilizer is at least one of tris (pentafluorophenyl) borane, 3, 5-difluorobenzonitrile, 2,3,5, 6-tetrafluoro-7, 7,8, 8-tetracyanoquinodimethane.
Furthermore, the stabilizer is added into the material for preparing the perovskite thin film layer in any mode or in any state, and the mass fraction of the stabilizer in the perovskite crystal is 0.01-5%.
Further, the method for preparing the perovskite thin film includes any one of a solution crystallization method, a vapor phase crystallization method, a solid-liquid phase crystallization method, and a solid crystallization method.
Further, the perovskite is of ABX3A semiconductor compound of the structure wherein A is CH3NH3 +(methylamino), CH3CH2NH3 +(ethylamino), CH (NH)2)2 +(amidino group), C (NH)2)3 +At least one of (guanidino) monovalent organic cations, or L i+、Na+、K+、Rb+、Ag+、Cu+、Cs+At least one monovalent inorganic cation of (a); b is Ge2+、Sn2+、Pb2+、Be2 +、Mg2+、Ca2+、Sr2+、Ba2+、Cu2+、Fe2+、Mn2+、Zn2+、Co2+、Ni2+At least one of the divalent metal ions of (a); x is Cl-、Br-、I-At least one of the monovalent anions of (a); the forbidden band width value of the semiconductor compound is more than or equal to 1.0eV and less than or equal to 2.0 eV.
Further, the thickness of the perovskite thin film layer is not less than 50 nanometers.
Further, the electrode layer includes at least one of gold, silver, copper, aluminum, chromium, Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), carbon materials, and composites thereof.
Further, the electron transport layer comprises at least one of titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium oxide, tungsten oxide, cerium oxide, C60, C70, PCBM, derivatives thereof and dopants thereof, and the thickness of the electron transport layer is 5-300 nm.
Further, the hole transport layer includes nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, CuGaO2、CuCrO2The hole transport layer comprises at least one of PTAA, PEDOT, Spiro-OMeTAD, phthalocyanine and porphyrin derivatives and dopants thereof, and the thickness of the hole transport layer is 5-200 nm.
Compared with the prior art, the method for improving the stability of the perovskite solar cell can effectively inhibit the migration of iodine in the perovskite material by introducing the stabilizer in the process of preparing the perovskite thin film layer, thereby improving the photoelectrochemical stability of the perovskite thin film and the relevant devices to which the perovskite thin film is applied.
Drawings
FIG. 1 is a schematic current density-voltage curve for example 1 of a perovskite solar cell fabricated using the method of the present invention;
FIG. 2 is a schematic current density-voltage curve for example 2 of a perovskite solar cell fabricated using the method of the present invention;
FIG. 3 is a schematic current density-voltage curve for example 3 of a perovskite solar cell fabricated using the method of the present invention;
FIG. 4 is a schematic current density-voltage curve for example 4 of a perovskite solar cell fabricated using the method of the present invention;
fig. 5 is a schematic of a current density-voltage curve for comparative example, example 5 in which a perovskite solar cell was fabricated without using a stabilizer.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
According to the preferred embodiment of the method for improving the stability of the perovskite solar cell, the perovskite solar cell comprises an electrode layer, an electron transport layer, a hole transport layer and a perovskite thin film layer, and a stabilizer is added in the process of preparing the perovskite thin film layer. The stabilizer is a compound with an F-B structure, wherein F refers to halogen fluorine, and B refers to a chemical structure with a strong electron withdrawing effect. Specifically, B is a compound containing-N+R3、-NO2、-CN、-COOH、-COOR、-C＝O、-SO3H、-CF3Any of the groups.
The stabilizer is at least one of tris (pentafluorophenyl) borane, 3, 5-difluorobenzonitrile, 2,3,5, 6-tetrafluoro-7, 7,8, 8-tetracyanoldimethylp-benzoquinone. The stabilizer is added into the material for preparing the perovskite thin film layer in any mode or in any state, and the mass fraction of the stabilizer in the final solid-phase perovskite crystal is 0.01-5%.
The stability of the perovskite solar cell can be well improved by adding the tris (pentafluorophenyl) borane into the preparation of the perovskite thin film material. The principle is that according to the halogen bond theory, fluorine in the tri (pentafluorophenyl) borane structure has a strong electron withdrawing effect and is used as a halogen element of a halogen bond donor. Iodine and iodide ions in the perovskite crystal structure contain lone pair electrons as Lewis base, and can generate mutual electronic action with fluorine in the tris (pentafluorophenyl) borane structure, so that the stability of iodine in the perovskite system is enhanced.
In practice, tris (pentafluorophenyl) borane may be added to the perovskite thin film material in any manner, for example, mixed with the perovskite precursor material, or introduced during the growth of the perovskite crystals, either in solution, or co-evaporated and added via an anti-solvent.
The preparation method of the perovskite thin film comprises any one of a solution crystallization method, a gas phase crystallization method, a solid-liquid phase crystallization method and a solid crystallization method. The thickness of the perovskite thin film layer is not less than 50 nanometers and not more than 1 millimeter.
The perovskite is ABX3A semiconductor compound of the structure wherein A is CH3NH3 +(methylamino), CH3CH2NH3 +(ethylamino), CH (NH)2)2 +(amidino group), C (NH)2)3 +At least one of (guanidino) monovalent organic cations, or L i+、Na+、K+、Rb+、Ag+、Cu+、Cs+At least one monovalent inorganic cation of (a); b is Ge2+、Sn2+、Pb2+、Be2+、Mg2+、Ca2+、Sr2+、Ba2+、Cu2+、Fe2+、Mn2+、Zn2+、Co2+、Ni2+At least one of the divalent metal ions of (a); x is Cl-、Br-、I-At least one of the monovalent anions of (a); the forbidden band width value of the semiconductor compound is more than or equal to 1.0eV and less than or equal to 2.0 eV.
The electrode layer includes at least one of gold, silver, copper, aluminum, chromium, Indium Tin Oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO), carbon materials, and composites thereof.
The electron transport layer comprises at least one of titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium oxide, tungsten oxide, cerium oxide, C60, C70, PCBM and derivatives and dopants thereof, and the thickness of the electron transport layer is 5-300 nm.
The hole transport layer comprises nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide and CuGaO2、CuCrO2The hole transport layer comprises at least one of PTAA, PEDOT, Spiro-OMeTAD, phthalocyanine and porphyrin derivatives and dopants thereof, and the thickness of the hole transport layer is 5-200 nm.
The process of the present invention is further illustrated below with reference to specific examples.
Example 1
Embodiment 1 of the perovskite solar cell manufacturing method using the perovskite solar cell stability improvement method of the present invention includes the following steps:
11. preparing a perovskite precursor solution: 0.159g of methyl ammonium iodide and 0.461g of lead iodide are dissolved in a mixed solvent of dimethyl sulfoxide and N, N-dimethylformamide, the volume ratio of the two is 1:9, and the mass fraction of a solute is 45 wt%.
12. Preparing a mixed solution of tris (pentafluorophenyl) borane: weighing a certain amount of tris (pentafluorophenyl) borane powder, and adding the powder into the fully dissolved perovskite precursor solution, wherein the mass fraction of tris (pentafluorophenyl) borane is 1 wt%.
13. Cleaning a substrate: and ultrasonically cleaning the FTO conductive glass by using a cleaning agent, deionized water, acetone and isopropanol respectively, blow-drying by using nitrogen, and then carrying out ultraviolet-ozone treatment for half an hour.
14. Preparing an electron transport layer: and spin-coating a tin dioxide-isopropanol solution with the particle diameter of 2-10 nanometers and the mass fraction of 2.5% on a substrate, and baking for one hour at 180 ℃ to obtain the electron transport layer with the film thickness of 30 nanometers.
15. Preparing a perovskite thin film layer: and (3) spin-coating the tris (pentafluorophenyl) borane mixed solution on the electron transport layer at the rotation speed of 4000 rpm, and quickly dropping a chlorobenzene solution before the solvent is completely volatilized to assist the nucleation and crystallization of the perovskite thin film. Then placing the film on a hot table at 100 ℃, and baking for half an hour until the perovskite is completely crystallized, wherein the film thickness of the perovskite thin film layer is 500 nanometers.
16. Preparing a hole transport layer: Spiro-OMeTAD is dissolved in chlorobenzene, the concentration is 2 wt%, the solution is coated on the surface of a perovskite thin film layer in a spinning mode, the rotating speed is 4000 revolutions per second, the film thickness of a hole transmission layer is 50 nanometers, and the perovskite thin film layer is placed in dry air for 24 hours.
17. Preparing an electrode: and (4) carrying out vacuum thermal evaporation on 80 nm of metal silver on the hole transport layer to finish the preparation of the battery.
The perovskite solar cell prepared in example 1 was subjected to a photo-aging test to obtain test data as shown in the following table, and the current density-voltage curve thereof is shown in fig. 1.
Table 1 table of photoaging test data for perovskite solar cells prepared using tris (pentafluorophenyl) borane
Example 2
21. cleaning a substrate: and ultrasonically cleaning the ITO conductive glass by respectively using a cleaning agent, deionized water, acetone and isopropanol, blow-drying by using nitrogen, and then carrying out ultraviolet-ozone treatment for half an hour.
22. Preparing a hole transport layer, namely spin-coating a PTAA chlorobenzene solution with the concentration of 10mg/m L on a substrate, and baking for 10min at 150 ℃ to obtain the hole transport layer with the film thickness of 30 nm.
23. Placing the substrate with the hole transport layer in a film forming cavity, and controlling the vacuum degree in the film forming cavity at 110-6Pa-10-4Pa, heating the substrate at 30-150 deg.C.
24. Respectively placing perovskite precursors of lead iodide, lead bromide, methyl hydrobromide, formamidine hydroiodide and tris (pentafluorophenyl) borane in different evaporation sources, wherein the evaporation rate of the lead iodide is
The evaporation rate of the lead bromide is 0.15-0.2 times that of the lead iodide, the evaporation rate of the formamidine hydroiodide is the same as that of the lead iodide, the evaporation rate of the methyl hydrobromide is the same as that of the lead bromide, and the evaporation rate of the tris (pentafluorophenyl) borane is 0.01-0.2 times that of the lead iodide. The reaction time is controlled to be 10 min-120 min, and all the components are fully reacted to form the perovskite thin film active layer.
25. Preparing an electron transport layer: PCBM is dissolved in chlorobenzene, the concentration is 10 wt%, the PCBM is spin-coated on the surface of the perovskite thin film layer, the rotating speed is 4000 revolutions per second, and the thickness of the electron transmission layer is 30 nanometers.
26. Preparing an electrode: and (4) carrying out vacuum thermal evaporation on 80 nm of metal aluminum on the electron transport layer to finish the preparation of the battery.
The perovskite solar cell prepared in example 2 was subjected to a photo-aging test to obtain test data as shown in the following table, and the current density-voltage curve thereof is shown in fig. 2.
Table 2 table of photoaging test data for perovskite solar cells prepared using tris (pentafluorophenyl) borane
Example 3
Embodiment 3 of the perovskite solar cell manufacturing method using the perovskite solar cell stability improvement method of the present invention includes the following steps:
31. preparing a perovskite precursor solution: 0.159g of methyl ammonium iodide and 0.461g of lead iodide are dissolved in a mixed solvent of dimethyl sulfoxide and N, N-dimethylformamide, the volume ratio of the two is 1:4, and the mass fraction of a solute is 40 wt%.
32. Preparing a solution of 2,3,5, 6-tetrafluoro-7, 7,8, 8-tetracyanoquinodimethane: weighing a certain amount of 2,3,5, 6-tetrafluoro-7, 7,8, 8-tetracyanoquinodimethane powder, adding an o-dichlorobenzene solvent, and preparing a solution with the concentration of 2 mg/ml.
33. Cleaning a substrate: and ultrasonically cleaning the FTO conductive glass by using a cleaning agent, deionized water, acetone and isopropanol respectively, blow-drying by using nitrogen, and then carrying out ultraviolet-ozone treatment for half an hour.
34. Preparing a hole transport layer: and spin-coating a nickel oxide-isopropanol solution with the particle diameter of 5-15 nanometers and the mass fraction of 2.5% on a substrate, and baking for one hour at 150 ℃ to obtain a hole transport layer with the film thickness of 30 nanometers.
35. Preparing a perovskite thin film layer: spin-coating the perovskite precursor solution on a hole transport layer at the rotation speed of 4000 rpm, and quickly dripping the o-dichlorobenzene solution of 2,3,5, 6-tetrafluoro-7, 7,8, 8-tetracyanodimethyl-p-benzoquinone before the solvent is completely volatilized to assist in the nucleation and crystallization of the perovskite thin film. Then placing the film on a hot table at 100 ℃, and baking for half an hour until the perovskite is completely crystallized, wherein the film thickness of the perovskite thin film layer is 400 nanometers.
36. Preparing an electron transport layer: putting the substrate deposited with perovskite into a film forming cavity, and controlling the vacuum degree to be 10-6Pa-10-4Pa, thermal evaporation of C60 with an evaporation rate of
Then a few nanometers of 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline is deposited as a hole blocking layer.
37. Preparing an electrode: and (4) carrying out vacuum thermal evaporation on 80 nm of metal gold on the hole transport layer to finish the preparation of the battery.
The perovskite solar cell prepared in example 3 was subjected to a photo-aging test to obtain test data as shown in the following table, and the current density-voltage curve thereof is shown in fig. 3.
TABLE 3 photoaging test data table for perovskite solar cell prepared using 2,3,5, 6-tetrafluoro-7, 7,8, 8-tetracyanoquinodimethane
Example 4
The method for improving the stability of the perovskite solar cell in the 4 th embodiment of the invention comprises the following steps:
41. preparing a perovskite precursor solution: formamidine hydroiodide, lead iodide and cesium iodide are dissolved in a mixed solvent of dimethyl sulfoxide and N, N-dimethylformamide at a volume ratio of 1:4 to prepare a solution with a concentration of 1.2 mol/l. Wherein the molar ratio of cesium iodide to formamidine hydroiodide is 0.15: 0.85.
42. Preparing a 3, 5-difluorobenzonitrile solution: weighing a certain amount of 3, 5-difluorobenzonitrile powder, adding a chlorobenzene solvent, and preparing a solution with the concentration of 0.5 mg/ml.
43. Cleaning a substrate: and ultrasonically cleaning the FTO conductive glass by using a cleaning agent, deionized water, acetone and isopropanol respectively, blow-drying by using nitrogen, and then carrying out ultraviolet-ozone treatment for half an hour.
44. Preparing an electron transport layer: and (3) blade-coating a titanium dioxide-ethanol solution with the particle diameter of 5-30 nanometers and the mass fraction of 2.5% on a substrate, baking at 100 ℃, and then annealing at 500 ℃ for one hour to obtain the electron transmission layer.
45. Preparing a perovskite thin film layer: and spin-coating the perovskite precursor solution on the electron transport layer at the rotation speed of 4000 rpm, and quickly dripping the chlorobenzene solution before the solvent is completely volatilized to assist the nucleation and crystallization of the perovskite thin film. Then placing the film on a hot table at 100 ℃ and baking the film for 10 minutes until the perovskite is completely crystallized, wherein the film thickness of the perovskite thin film layer is 550 nanometers.
46. The perovskite thin film is modified by using 3, 5-difluorobenzonitrile: immersing the perovskite film cooled to room temperature into a 3, 5-difluorobenzonitrile solution, taking out after 3 minutes, and washing with chlorobenzene to remove the redundant 3, 5-difluorobenzonitrile on the surface.
47. Preparing a hole transport layer: dissolving copper phthalocyanine derivative in chlorobenzene at a concentration of 2 wt%, spin-coating on the surface of perovskite thin film layer at a rotation speed of 3000 r/s and a film thickness of a hole transport layer of 40 nm, and standing in dry air for 24 hours.
48. Preparing an electrode: and (4) carrying out vacuum thermal evaporation on 80 nm of metal copper on the hole transport layer to finish the preparation of the battery.
The perovskite solar cell prepared in example 4 was subjected to a photo-aging test to obtain test data as shown in the following table, and the current density-voltage curve thereof is shown in fig. 4.
Table 4 photoaging test data table for perovskite solar cell prepared using 3, 5-difluorobenzonitrile
Example 5
A comparative example according to the present invention is example 5, which is a procedure identical to example 4, but in which the perovskite thin film is not modified with a stabilizer.
The perovskite solar cell prepared in example 5 was subjected to a photo-aging test to obtain test data as shown in the following table, and the current density-voltage curve thereof is shown in fig. 5.
TABLE 5 light aging test data sheet for perovskite solar cell prepared without stabilizer
From the test data tables of examples 1 to 5 described above, evaluation parameters such as open circuit voltage, short circuit current density, fill factor, photoelectric conversion efficiency, efficiency maintenance and the like show at the same light irradiation time: the performance index of the perovskite solar cell prepared by the method for improving the stability of the perovskite solar cell is obviously superior to that of the perovskite solar cell prepared without the method.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The method for improving the stability of the perovskite solar cell comprises an electrode layer, an electron transport layer, a hole transport layer and a perovskite thin film layer, and is characterized in that a stabilizer is added in the process of preparing the perovskite thin film layer, wherein the stabilizer is a compound with an F-B structure, F is halogen fluorine, and B is a chemical structure with a strong electron-withdrawing effect.
2. The method of improving the stability of a perovskite solar cell as claimed in claim 1, wherein in the F-B structure of the stabilizer, B is N-containing+R3、NO2、CN、COOH、COOR、-C=O、SO3H、CF3Any of the groups.
3. The method of improving the stability of a perovskite solar cell as claimed in claim 1, wherein the stabilizer is at least one of tris (pentafluorophenyl) borane, 3, 5-difluorobenzonitrile, 2,3,5, 6-tetrafluoro-7, 7,8, 8-tetracyanoquinodimethane.
4. The method for improving the stability of a perovskite solar cell as claimed in claim 1, wherein the stabilizer is added to the material for preparing the perovskite thin film layer in any manner or in any state, and the mass fraction of the stabilizer in the perovskite crystal is 0.01 to 5%.
5. The method of improving the stability of a perovskite solar cell as claimed in claim 1, wherein the perovskite thin film is prepared by any one of a solution crystallization method, a vapor phase crystallization method, a solid-liquid phase crystallization method and a solid crystallization method.
6. The method of improving the stability of a perovskite solar cell as claimed in claim 1 wherein the perovskite is of ABX3A semiconductor compound of the structure wherein A is CH3NH3 +、CH3CH2NH3 +、CH(NH2)2 +、C(NH2)3 +Or L i, or+、Na+、K+、Rb+、Ag+、Cu+、Cs+At least one monovalent inorganic cation of (a); b is Ge2+、Sn2+、Pb2+、Be2+、Mg2+、Ca2+、Sr2+、Ba2+、Cu2+、Fe2+、Mn2+、Zn2+、Co2+、Ni2+At least one of the divalent metal ions of (a); x is Cl-、Br-、I-At least one of the monovalent anions of (a); the forbidden band width value of the semiconductor compound is more than or equal to 1.0eV and less than or equal to 2.0 eV.
7. The method of improving the stability of a perovskite solar cell as defined in claim 1 wherein the thickness of the perovskite thin film layer is not less than 50 nanometers.
8. The method of improving the stability of a perovskite solar cell as claimed in claim 1 wherein the electrode layer comprises at least one of gold, silver, copper, aluminum, chromium, indium tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide, carbon materials and composites thereof.
9. The method of improving the stability of a perovskite solar cell as claimed in claim 1, wherein the electron transport layer comprises at least one of titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium trioxide, tungsten oxide, cerium oxide, C60, C70, PCBM, and derivatives and dopants thereof, and wherein the thickness of the electron transport layer is 5 to 300 nm.
10. The method of improving the stability of a perovskite solar cell of claim 1, wherein the hole transport layer comprises nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, cupric oxide, cuprous oxide, cobalt oxide, CuGaO2、CuCrO2The hole transport layer comprises at least one of PTAA, PEDOT, Spiro-OMeTAD, phthalocyanine and porphyrin derivatives and dopants thereof, and the thickness of the hole transport layer is 5-200 nm.
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| CN112382725A (en) * | 2020-11-06 | 2021-02-19 | 中国科学院青岛生物能源与过程研究所 | Method for reducing ion migration of organic-inorganic hybrid perovskite thin film |
| CN112582550A (en) * | 2020-12-07 | 2021-03-30 | 上海黎元新能源科技有限公司 | Perovskite solar cell based on polymer functional layer and preparation method thereof |
| US20210119161A1 (en) * | 2019-10-18 | 2021-04-22 | Samsung Electronics Co., Ltd | Quantum dot light-emitting device and electronic device |
| CN113651825A (en) * | 2021-08-17 | 2021-11-16 | 华侨大学 | Fullerene derivative, preparation method thereof and perovskite solar cell |
| CN113754893A (en) * | 2021-09-01 | 2021-12-07 | 兰州大学 | Method for preparing perovskite solar cell by porphyrin complex self-assembly supermolecule |
| CN117337063A (en) * | 2023-08-01 | 2024-01-02 | 兰州大学 | Hole transport composition of fluoro-substituted porphyrin metal complex and application thereof |
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| CN112382725A (en) * | 2020-11-06 | 2021-02-19 | 中国科学院青岛生物能源与过程研究所 | Method for reducing ion migration of organic-inorganic hybrid perovskite thin film |
| CN112382725B (en) * | 2020-11-06 | 2023-03-24 | 中国科学院青岛生物能源与过程研究所 | Method for reducing ion migration of organic-inorganic hybrid perovskite thin film |
| CN112582550A (en) * | 2020-12-07 | 2021-03-30 | 上海黎元新能源科技有限公司 | Perovskite solar cell based on polymer functional layer and preparation method thereof |
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| CN113651825B (en) * | 2021-08-17 | 2022-07-26 | 华侨大学 | Fullerene derivative, preparation method thereof and perovskite solar cell |
| CN113754893A (en) * | 2021-09-01 | 2021-12-07 | 兰州大学 | Method for preparing perovskite solar cell by porphyrin complex self-assembly supermolecule |
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