CN108352229A - 用于离子注入系统的低传导性自屏蔽绝缘体 - Google Patents
用于离子注入系统的低传导性自屏蔽绝缘体 Download PDFInfo
- Publication number
- CN108352229A CN108352229A CN201680059373.3A CN201680059373A CN108352229A CN 108352229 A CN108352229 A CN 108352229A CN 201680059373 A CN201680059373 A CN 201680059373A CN 108352229 A CN108352229 A CN 108352229A
- Authority
- CN
- China
- Prior art keywords
- insulator
- slender body
- grooving
- features
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 title claims abstract description 131
- 239000007943 implant Substances 0.000 title description 17
- 238000000034 method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims 1
- 230000005764 inhibitory process Effects 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 58
- 238000010884 ion-beam technique Methods 0.000 description 32
- 238000000605 extraction Methods 0.000 description 29
- 239000004020 conductor Substances 0.000 description 12
- 238000010891 electric arc Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 230000009471 action Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000615 nonconductor Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910006160 GeF4 Inorganic materials 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 101150013568 US16 gene Proteins 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910021398 atomic carbon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004969 ion scattering spectroscopy Methods 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- LNDHQUDDOUZKQV-UHFFFAOYSA-J molybdenum tetrafluoride Chemical compound F[Mo](F)(F)F LNDHQUDDOUZKQV-UHFFFAOYSA-J 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/03—Mounting, supporting, spacing or insulating electrodes
- H01J2237/038—Insulating
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562253399P | 2015-11-10 | 2015-11-10 | |
| US62/253,399 | 2015-11-10 | ||
| PCT/US2016/061331 WO2017083516A1 (en) | 2015-11-10 | 2016-11-10 | Low conductance self-shielding insulator for ion implantation systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108352229A true CN108352229A (zh) | 2018-07-31 |
Family
ID=57396837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680059373.3A Pending CN108352229A (zh) | 2015-11-10 | 2016-11-10 | 用于离子注入系统的低传导性自屏蔽绝缘体 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2018533184A (ko) |
| KR (1) | KR20180081483A (ko) |
| CN (1) | CN108352229A (ko) |
| TW (1) | TWI745319B (ko) |
| WO (1) | WO2017083516A1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11791126B2 (en) | 2019-08-27 | 2023-10-17 | Applied Materials, Inc. | Apparatus for directional processing |
| JP7515376B2 (ja) | 2020-11-19 | 2024-07-12 | 住友重機械イオンテクノロジー株式会社 | 絶縁構造および絶縁構造の製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6260873A (ja) * | 1985-09-10 | 1987-03-17 | Toshiba Corp | 成膜用電気絶縁部材およびそれを用いた成膜方法 |
| CN101071752A (zh) * | 2006-05-10 | 2007-11-14 | 台湾积体电路制造股份有限公司 | 高电流离子植入系统及其中的改良装置和绝缘体 |
| CN101326595A (zh) * | 2005-12-09 | 2008-12-17 | 西门子公司 | 压铸成形的外锥形绝缘套管 |
| CN103597553A (zh) * | 2011-06-09 | 2014-02-19 | Abb技术有限公司 | 用于中空圆柱形绝缘体外壳的安装凸缘的强化元件 |
| US9117630B2 (en) * | 2013-03-29 | 2015-08-25 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Insulation structure of high voltage electrodes for ion implantation apparatus |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB191516550A (en) * | 1915-11-23 | 1916-09-14 | John Brightwen Alexander | Improved Telegraph or Telephone Line Insulator. |
| JPS5435614A (en) | 1977-08-24 | 1979-03-15 | Nec Corp | Transfer speed selecting system in facsimile |
| US5443798A (en) | 1993-10-27 | 1995-08-22 | The Charles Stark Draper Laboratories | Separator plate for a chemical oxygen generator candle and assembly and generator made therefrom |
| KR100796795B1 (ko) | 2001-10-22 | 2008-01-22 | 삼성전자주식회사 | 반도체 소자의 접촉부 및 그 제조 방법과 이를 포함하는표시 장치용 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
| WO2011146571A2 (en) | 2010-05-21 | 2011-11-24 | Applied Materials, Inc. | Tightly-fitted ceramic insulator on large-area electrode |
-
2016
- 2016-11-10 KR KR1020187008472A patent/KR20180081483A/ko unknown
- 2016-11-10 JP JP2018521416A patent/JP2018533184A/ja active Pending
- 2016-11-10 WO PCT/US2016/061331 patent/WO2017083516A1/en active Application Filing
- 2016-11-10 CN CN201680059373.3A patent/CN108352229A/zh active Pending
- 2016-12-07 TW TW105140399A patent/TWI745319B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6260873A (ja) * | 1985-09-10 | 1987-03-17 | Toshiba Corp | 成膜用電気絶縁部材およびそれを用いた成膜方法 |
| CN101326595A (zh) * | 2005-12-09 | 2008-12-17 | 西门子公司 | 压铸成形的外锥形绝缘套管 |
| CN101071752A (zh) * | 2006-05-10 | 2007-11-14 | 台湾积体电路制造股份有限公司 | 高电流离子植入系统及其中的改良装置和绝缘体 |
| CN103597553A (zh) * | 2011-06-09 | 2014-02-19 | Abb技术有限公司 | 用于中空圆柱形绝缘体外壳的安装凸缘的强化元件 |
| US9117630B2 (en) * | 2013-03-29 | 2015-08-25 | Sumitomo Heavy Industries Ion Technology Co., Ltd. | Insulation structure of high voltage electrodes for ion implantation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017083516A1 (en) | 2017-05-18 |
| TWI745319B (zh) | 2021-11-11 |
| KR20180081483A (ko) | 2018-07-16 |
| TW201824323A (zh) | 2018-07-01 |
| JP2018533184A (ja) | 2018-11-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180731 |
|
| WD01 | Invention patent application deemed withdrawn after publication |