CN108336144B - Thin film transistor used in display panel and display panel - Google Patents
Thin film transistor used in display panel and display panel Download PDFInfo
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- CN108336144B CN108336144B CN201810058906.7A CN201810058906A CN108336144B CN 108336144 B CN108336144 B CN 108336144B CN 201810058906 A CN201810058906 A CN 201810058906A CN 108336144 B CN108336144 B CN 108336144B
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- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000011521 glass Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910004205 SiNX Inorganic materials 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 abstract description 11
- 239000000463 material Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 229920001621 AMOLED Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
The invention provides a thin film transistor and a display panel used in the display panel, the thin film transistor includes: the grid electrode and the grid electrode insulating layer are positioned above the glass substrate in the display panel, and the grid electrode insulating layer covers the grid electrode; the grid is positioned in a non-display area of the display panel; an active layer is arranged above the gate insulating layer, the active layer is positioned above the gate, and a source electrode and a drain electrode are also arranged on the active layer; the grid electrode sequentially comprises a first nonmetal layer and a metal layer in the direction away from the glass substrate. The invention can improve the influence of reflected light, reduce the reflectivity and improve the display quality on the premise of not increasing the cost of the display panel.
Description
Technical Field
The invention relates to the technical field of display, in particular to a thin film transistor used in a display panel and the display panel.
Background
A schematic structural view of an AM (active) display device is shown in fig. 1, and a schematic structural view of a thin film transistor included therein is shown in fig. 2. Reference numerals 1 ', 2', 3 ', 4', 5 ', and 6' in fig. 1 and 2 denote a glass substrate, an insulating layer, an a-Si layer (amorphous silicon layer), a data line, a gate line, and a pixel electrode, respectively.
AM display devices include panels including AM-OLEDs (OLEDs, i.e., organic light emitting diodes) and AM-LCDs (LCDs, i.e., liquid crystal displays).
The metal electrode of the thin film transistor in the AM display device generally adopts a metal structure of Cu, Al, Ag, Au, Mo, Cr, or a composite metal structure of Mo and Cu, Mo and Al, and Mo. However, the reflectivity of the metal part is high whether the former single metal structure or the composite structure of several metals is adopted. The average reflectivity of the metal electrode at 400-700nm of visible light is generally more than 40%.
Under the condition of illumination by an external light source, the metal electrode of the thin film transistor has stronger reflected light, so that the display effect of the AM display device is influenced, and particularly under the condition that the included angle between the sight of a person and the AM display device is smaller, the reflected light is stronger, and the picture influence is larger. In order to improve the metal reflection of the AM-OLED panel, it is the conventional practice in the industry to attach a 1/4 λ polarizer on the AM-OLED panel to reduce the metal reflection, but this increases the cost of the AM-OLED panel. Similarly, the AM-LCD panel also has a problem of light reflection of the metal electrode, and the current practice is to add a low-reflection film layer and an anti-glare structure on the upper polarizer of the AM-LCD panel to improve the influence of reflected light, so as to improve the display quality, which increases the complexity of the AM-LCD panel structure and also increases the cost of the AM-LCD panel.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a thin film transistor for a display panel and a display panel, which can improve the influence of reflected light, reduce the reflectivity, and improve the display quality without increasing the cost of the display panel. The display panel can also improve the penetration rate.
The invention provides a thin film transistor used in a display panel, comprising: the grid electrode and the grid electrode insulating layer are positioned above the glass substrate in the display panel, and the grid electrode insulating layer covers the grid electrode; the grid electrode is positioned in a non-display area of the display panel;
an active layer is arranged above the gate insulating layer, the active layer is positioned above the gate, and a source electrode and a drain electrode are also arranged on the active layer;
and in the direction far away from the glass substrate, the grid electrode sequentially comprises a first nonmetal layer and a metal layer.
Preferably, the metal layer includes a first metal layer and a second metal layer, and the first metal layer is located between the second metal layer and the first nonmetal layer.
Preferably, the material of the first metal layer is one of chromium, titanium and molybdenum or a composite metal material of one of chromium, titanium and molybdenum;
the second metal layer is made of copper or aluminum;
the first non-metal layer is one of a Si layer, a SiNx layer and a SiOx layer.
Preferably, the thickness of the first metal layer is 15-70 nm, the thickness of the second metal layer is 150-500 nm, and the thickness of the first non-metal layer is 10-20 nm.
Preferably, the source electrode and the drain electrode are both located in a non-display area of the display panel, and in a direction away from the glass substrate, the source electrode and the drain electrode sequentially include a first nonmetal layer and a metal layer.
The invention also provides a display panel, which comprises a glass substrate, a second nonmetal layer and the thin film transistor; the second nonmetal layer is located between the glass substrate and the thin film transistor or between the glass substrate and the thin film transistor, and the refractive index of the second nonmetal layer is smaller than the refractive index of the glass substrate and the refractive index of the gate insulating layer of the thin film transistor.
Preferably, the second non-metal layer is a SiOx layer, and the gate insulating layer is a SiNx layer.
Preferably, the liquid crystal display device further comprises a passivation layer located above the thin film transistor, the passivation layer covers the source electrode and the drain electrode of the thin film transistor, a via hole and a pixel electrode are further arranged on the passivation layer, and the pixel electrode is connected with the source electrode or the drain electrode through the via hole.
Preferably, the thickness of the second non-metal layer is λ/(4n), where λ is in the range of 400-700nm, and n is the refractive index of the second non-metal layer.
Preferably, the thickness of the second non-metal layer is in a range of 60 to 150 nm.
The implementation of the invention has the following beneficial effects: according to the invention, the grid electrode of the thin film transistor is divided into the metal layer and the first non-metal layer, the first non-metal layer is one of the Si layer, the SiNx layer and the SiOx layer, the first non-metal layer is positioned between the metal layer and the glass substrate, when light of an external light source irradiates the grid electrode, the external light is vibrated between the grid electrode and the glass substrate, the first non-metal layer absorbs part of the light, the light reflected by the grid electrode is reduced, the reflectivity of the grid electrode can be reduced, and the display quality and the product competitiveness of the display panel are improved. And the first non-metal layer is one of a Si layer, a SiNx layer and a SiOx layer, and a low-reflection film layer and an anti-glare structure or a polarizer with 1/4 lambda wavelength are not required to be used, so that the cost of the display panel is not increased.
The second nonmetal layer is arranged between the thin film transistor and the glass substrate, the refractive index of the second nonmetal layer is smaller than that of the glass substrate and that of the grid electrode insulating layer, and when emergent rays in the display panel penetrate through the grid electrode insulating layer, the second nonmetal layer and the glass substrate, reflected light can be reduced, transmitted light is increased, and therefore the transmittance can be higher. Furthermore, the second nonmetal layer can improve the penetration rate of the display panel and reduce the backlight power consumption of the display panel.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural view of an AM display device provided by the present invention.
Fig. 2 is a schematic structural view of a thin film transistor in an AM display device provided in the present invention.
Fig. 3a and 3b are schematic structural diagrams of the display panel with two different structures provided by the present invention, in which the passivation layer is provided with a via hole.
Fig. 4 is a schematic structural diagram of a gate provided by the present invention.
Fig. 5a and 5b are schematic diagrams of two different structures of the display panel provided by the invention.
FIG. 6 is a diagram illustrating the relationship between the reflectivity of the display panel and the wavelength of the light emitted from the external light source according to another embodiment of the present invention.
Detailed Description
The present invention provides a thin film transistor for use in a display panel, as shown in fig. 3a, the thin film transistor comprising: a gate electrode 5 and a gate insulating layer 3 positioned above the glass substrate 1 in the display panel, wherein the gate insulating layer 3 covers the gate electrode 5; the gate 5 is located in a non-display region of the display panel.
An active layer 6 is disposed above the gate insulating layer 3, the active layer 6 is disposed above the gate 5, and a source electrode 7 and a drain electrode 8 are disposed on the active layer 6.
As shown in fig. 4, the gate 5 sequentially includes a first non-metal layer 52 and a metal layer 51 in a direction away from the glass substrate 1, the first non-metal layer 52 is one of a Si layer, a SiNx layer, and a SiOx layer, and x > 1.
Further, the metal layer 51 includes a first metal layer 512 and a second metal layer 511, and the first metal layer 512 is located between the second metal layer 511 and the first nonmetal layer 52.
Further, the material of the first metal layer 512 is one of chromium (Cr), titanium (Ti), and molybdenum (Mo), or a composite metal material of one of chromium, titanium, and molybdenum; the material of the second metal layer 511 is copper (Cu) or aluminum (Al).
Further, the thickness of the first metal layer 512 is 15 to 70nm, the thickness of the second metal layer 511 is 150 to 500nm, and the thickness of the first non-metal layer 52 is 10 to 20 nm.
Further, the source electrode 7 and the drain electrode 8 are both located in the non-display region of the display panel, and in a direction away from the glass substrate 1, the source electrode 7 and the drain electrode 8 each sequentially include a first non-metal layer 52 and a metal layer 51.
The invention also provides a display panel, which comprises a glass substrate 1, a second non-metal layer 2 and the thin film transistor; the second nonmetal layer 2 is located between the glass substrate 1 and the thin film transistor or the glass substrate 1 is located between the thin film transistor and the second nonmetal layer 2, and the refractive index of the second nonmetal layer 2 is smaller than the refractive index of the glass substrate 1 and the refractive index of the gate insulating layer 3 of the thin film transistor. Preferably, the display panel further includes a PI (polyimide) film layer over the pixel electrode 9. As shown in fig. 3a, the second non-metal layer 2 is located between the glass substrate 1 and the thin film transistor; as shown in fig. 3b, the glass substrate 1 is located between the thin film transistor and the second nonmetal layer 2.
Further, the second non-metal layer 2 is a SiOx layer, and the gate insulating layer 3 is a SiNx layer.
Further, the display panel further includes a passivation layer 4 located above the gate insulating layer 3 of the thin film transistor, the passivation layer 4 covers the source electrode 7 and the drain electrode 8 of the thin film transistor, as shown in fig. 5a or 5b, a via hole 41 and a pixel electrode 9 are further disposed on the passivation layer 4, and the pixel electrode 9 is connected to the source electrode 7 through the via hole 41. In another embodiment, the via hole 41 may be disposed above the drain electrode 8, and the pixel electrode 9 is connected to the drain electrode 8 through the via hole 41.
Further, the thickness of the second nonmetal layer 2 is λ/(4n), where λ is the wavelength of the light emitted from the external light source, λ ranges from 400 nm to 700nm, and n is the refractive index of the second nonmetal layer 2. When the thickness of the second nonmetal layer 2 is λ/(4n), the phase difference between the incident light and the reflected light on the second nonmetal layer 2 is pi, so that the reflected light can be reduced, and the light transmittance can be improved.
Further, the thickness of the second non-metal layer 2 is in a range of 60 to 150 nm.
Further, the material of the pixel electrode 9 is ITO (indium tin oxide) material.
In another embodiment provided by the present invention, the second metal layer 511, the first metal layer 512, and the first nonmetal layer 52 in the gate 5 of the display panel are respectively Cu, Mo, and Si, and the second nonmetal layer 2 is SiO2, wherein the thickness of Cu is 300nm, the thickness of Mo is 45nm, the thickness of Si is 18nm, and the thickness of SiO2 is 90 nm. The relationship between the light emitted from the external light source and the reflectivity of the display panel is shown in fig. 6, where the abscissa in fig. 6 is the wavelength (unit: nm) of the external light, the ordinate is the reflectivity of the display panel, and when the wavelength of the external light is around 570nm, the reflectivity of the display panel is slightly less than 10%.
When 86nm thick SiO2 is added to the display area of the display panel, the transmittance of the display panel is 107% when the backlight source is a C light source, which is 7% higher than the transmittance of the display area of a common display panel of 100%.
The display panel in the invention can be a liquid crystal display panel or an OLED display panel.
In summary, in the present invention, the gate electrode 5 of the thin film transistor is divided into the metal layer 51 and the first non-metal layer 52, the first non-metal layer 52 is one of a Si layer, a SiNx layer, and a SiOx layer, the first non-metal layer 52 is located between the metal layer 51 and the glass substrate 1, when light from an external light source is irradiated onto the gate electrode 5, and external light oscillates between the gate electrode 5 and the glass substrate 1, a portion of the light is absorbed by the first non-metal layer 52, and light reflected by the gate electrode 5 is reduced, so that the reflectivity of the gate electrode 5 can be reduced, and the display quality and the product competitiveness of the display panel are improved. Moreover, the first non-metal layer 52 is one of a Si layer, a SiNx layer, and a SiOx layer, and does not need to use a low-reflection film layer and an anti-glare structure or a polarizer with a wavelength of 1/4 λ, and thus, the cost of the display panel is not increased.
When the first non-metal layer 52 is also disposed on the source 7 and the drain 8 of the tft, the reflectivity of the electrode on the display panel can be further reduced, and the display quality of the display panel can be further improved.
The second nonmetal layer 2 is arranged between the thin film transistor and the glass substrate 1, the refractive index of the second nonmetal layer 2 is smaller than the refractive index of the glass substrate 1 and the refractive index of the gate insulating layer 3, and when emergent light of a backlight source of the display panel penetrates through the gate insulating layer 3, the second nonmetal layer 2 and the glass substrate 1, reflected light can be reduced, transmitted light can be increased, and therefore the transmittance can be higher. Furthermore, the second nonmetal layer 2 can improve the penetration rate of the display panel and reduce the backlight power consumption of the display panel.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (9)
1. A thin film transistor for use in a display panel, comprising: the grid electrode and the grid electrode insulating layer are positioned above the glass substrate in the display panel, and the grid electrode insulating layer covers the grid electrode; the grid electrode is positioned in a non-display area of the display panel;
an active layer is arranged above the gate insulating layer, the active layer is positioned above the gate, and a source electrode and a drain electrode are also arranged on the active layer;
the grid electrode sequentially comprises a first nonmetal layer and a metal layer in the direction far away from the glass substrate;
the source electrode and the drain electrode are both positioned in a non-display area of the display panel, and in the direction away from the glass substrate, the source electrode and the drain electrode sequentially comprise a first nonmetal layer and a metal layer;
the first non-metal layer is one of a Si layer, a SiNx layer and a SiOx layer.
2. The thin film transistor of claim 1, wherein the metal layer comprises a first metal layer and a second metal layer, and the first metal layer is located between the second metal layer and the first nonmetal layer.
3. The thin film transistor for use in a display panel according to claim 2,
the first metal layer is made of one of chromium, titanium and molybdenum or a composite metal material of one of chromium, titanium and molybdenum;
the second metal layer is made of copper or aluminum;
the first non-metal layer is one of a Si layer, a SiNx layer and a SiOx layer.
4. The thin film transistor of claim 2, wherein the first metal layer has a thickness of 15-70 nm, the second metal layer has a thickness of 150-500 nm, and the first non-metal layer has a thickness of 10-20 nm.
5. A display panel comprising a glass substrate, a second non-metal layer, and the thin film transistor according to any one of claims 1 to 4; the second nonmetal layer is located between the glass substrate and the thin film transistor or between the glass substrate and the thin film transistor, and the refractive index of the second nonmetal layer is smaller than the refractive index of the glass substrate and the refractive index of the gate insulating layer of the thin film transistor.
6. The display panel according to claim 5, wherein the second non-metal layer is a SiOx layer, and the gate insulating layer is a SiNx layer.
7. The display panel according to claim 5, further comprising a passivation layer over the thin film transistor, wherein the passivation layer covers the source and drain electrodes of the thin film transistor, a via hole and a pixel electrode are further disposed on the passivation layer, and the pixel electrode is connected to the source or the drain electrode through the via hole.
8. The display panel according to claim 5, wherein the second non-metal layer has a thickness λ/(4n), where λ is in a range of 400 to 700nm, and n is a refractive index of the second non-metal layer.
9. The display panel according to claim 5, wherein the second non-metal layer has a thickness in a range of 60 to 150 nm.
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| CN109119452A (en) * | 2018-09-18 | 2019-01-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN110082977B (en) * | 2019-05-15 | 2020-11-24 | 深圳市华星光电技术有限公司 | TFT array substrate and display panel |
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| CN103869552A (en) * | 2012-12-10 | 2014-06-18 | 株式会社日本显示器 | Liquid crystal display device and manufucturing method thereof |
| CN105717718A (en) * | 2014-12-19 | 2016-06-29 | 三星显示有限公司 | Display Panel Having Improved Brightness And Method For Fabricating The Same |
| WO2016204018A1 (en) * | 2015-06-16 | 2016-12-22 | 株式会社神戸製鋼所 | Low-reflectance electrode for display device, and sputtering target |
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Patent Citations (4)
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|---|---|---|---|---|
| CN1641451A (en) * | 2004-01-16 | 2005-07-20 | 鸿扬光电股份有限公司 | Transverse electric field liquid crystal display device picture element, and its substrate and picture element process |
| CN103869552A (en) * | 2012-12-10 | 2014-06-18 | 株式会社日本显示器 | Liquid crystal display device and manufucturing method thereof |
| CN105717718A (en) * | 2014-12-19 | 2016-06-29 | 三星显示有限公司 | Display Panel Having Improved Brightness And Method For Fabricating The Same |
| WO2016204018A1 (en) * | 2015-06-16 | 2016-12-22 | 株式会社神戸製鋼所 | Low-reflectance electrode for display device, and sputtering target |
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