CN101067704A - Picture element structure, display device and photoelectric device - Google Patents
Picture element structure, display device and photoelectric device Download PDFInfo
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- CN101067704A CN101067704A CN 200710126299 CN200710126299A CN101067704A CN 101067704 A CN101067704 A CN 101067704A CN 200710126299 CN200710126299 CN 200710126299 CN 200710126299 A CN200710126299 A CN 200710126299A CN 101067704 A CN101067704 A CN 101067704A
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Abstract
The invention relates to a pixel structure, a display unit and a photoelectric device, and the display unit comprises: driving circuit region and pixel region, where the pixel region is connected with the driving circuit region and comprises: micro reflecting pixel structure, which comprises reflecting electrode; transmitting pixel structure which comprises pixel electrode; and dielectric layer covered on the reflecting electrode, and the pixel electrode is arranged on the dielectric layer surface and connected with the reflecting electrode. And the invention can improve the contrast of LCD.
Description
Technical field
The present invention relates to a kind of dot structure and display device, particularly a kind of semi-penetrating semi-reflecting type liquid crystal displaying device.
Background technology
Traditionally, semi-penetrating semi-reflecting type liquid crystal displaying device (Liquid Crystal Display, LCD) be with from external light source and in the backlight that is built in the display system carry out rayed and display image.The advantage of semi-penetration, semi-reflective display device be than penetration display device come power saving.
Fig. 1 is for showing the synoptic diagram of the pixel electrode in the known semi-penetrating semi-reflecting type liquid crystal displaying device panel.Traditional semi-penetrating semi-reflecting type liquid crystal displaying device panel comprises back side substrate 10 and positive substrate 12, and it is made of transparent material respectively.Display surface is positioned at positive substrate 12 outsides, and the backlight (not shown) is arranged at back side substrate 10 outsides.Liquid crystal layer 14 is sandwiched between back side substrate 10 and the positive substrate 12, in order to regulate light turnover amount to reach the function that image shows.Wherein, the liquid crystal molecule that semi-penetrating semi-reflecting type liquid crystal displaying device often uses is to have the liquid crystal that windup-degree (Twist angle) is about 90 degree, also is referred to as stable twisted nematic (twist nematic mode; TN mode) liquid crystal.
Traditionally, pixel electrode comprises reflecting electrode 16, and it is adjacent to pixel electrode 18, so reflecting electrode 16 has defined echo area 20 and clear area 22 respectively with pixel electrode 18.
In this clear area, light 24 break-through that are derived from backlight are crossed pixel electrode 18 and are arrived display surfaces with display image with liquid crystal layer 14.In this echo area, the light 26 that is derived from the external light source (not shown) of this display surface penetrates liquid crystal layer 14, reflection on reflecting electrode 16, and then penetrate liquid crystal layer 14 arrival display surfaces.Yet traditional semi-penetrating semi-reflecting type liquid crystal displaying device can itself make environment light source can't reach preferable usable reflection because of its structure, can only just can close backlight having under the sufficient environment light source.
Therefore, a kind of traditional micro-reflection type transflective liquid crystal display device is suggested, on backlight or polaroid, make improvements, for example adopt the outer brightness enhancement film (Dual BrightnessEnhancement Film, DBEF) that contains particle at random of pasting to improve the problems referred to above, but the image that such structure causes showing under reflective-mode easily produce the problem of parallax (parallax).Wherein, the normal employed liquid crystal molecule of micro-reflection type transflective liquid crystal display device is to have the liquid crystal that windup-degree (Twist angle) is about 90 degree as the normal employed liquid crystal molecule of semi-penetrating semi-reflecting type liquid crystal displaying device also, also is referred to as stable twisted nematic (twist nematic mode; TN mode) liquid crystal.Therefore, in order to eliminate this type liquid crystal molecule, except former polaroid, still need and to adopt interior polaroid to improve dark attitude and the uneven problem of bright attitude demonstration again, but still can't obtain preferable dark attitude and the demonstration of bright attitude in dark attitude and the uneven problem of bright attitude demonstration.
In addition, the wherein coefficient that influences the transflective liquid crystal display device display effect is an optical property.Optical property be according to liquid crystal cells phase delay to determine its display performance, this coefficient table is shown " d Δ n ", wherein d is cell gap (please refer to Fig. 1), and " Δ n " is the average birefringence rate variance of liquid crystal in the cell gap.Traditionally, preferable optical phase put-off is d Δ n～(1/2) λ in this penetrating region, and is d Δ n～(1/4) λ in this echo area.Yet the problem that traditional semi-penetration, semi-reflective LCD device is met with is that unit phase delay is all identical in reflection with the clear area.Therefore, can't obtain preferable optical property simultaneously in reflection and the clear area of traditional semi-penetration, semi-reflective liquid crystal LCD.
Therefore, developing the transflective liquid crystal display device that to have preferable usable reflection and optical property, is an important topic of present plane display technique.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of dot structure, comprising: first substrate; Many signal line are formed in the described substrate, to distinguish a plurality of pixel regions; At least one switching device is formed in each pixel region; At least one storage capacitors is formed in each pixel region, and is connected in described switching device; Dielectric layer is covered in the described substrate; Pixel electrode is formed on the described dielectric layer, and is connected in switching device in each pixel region and at least one of storage capacitors; Wherein, the electrode of at least one of described signal wire, described switching device, described storage capacitors is as little reflector space.
According to structure of the present invention, wherein, the material of described pixel electrode comprises and penetrates material, reflection material or above-mentioned combination.
According to structure of the present invention, also comprise second substrate and correspond to described first substrate, and described second substrate has common electrode on it; And liquid crystal layer, be arranged between described first substrate and described second substrate.
According to structure of the present invention, also comprise black matrix", be formed at described second substrate, and have at least one opening, corresponding at least one of described a plurality of little echo areas.
According to structure of the present invention, also comprise the colorama resistance layer, be arranged between described first substrate and second substrate, on second substrate or between first substrate and the described dielectric layer.
According to structure of the present invention, the specific inductive capacity of wherein said dielectric layer is for being less than or equal to 3.5 in fact.
According to structure of the present invention, the thickness of wherein said dielectric layer is essentially 1.7 microns (μ m)～2 microns (μ m).
According to structure of the present invention, wherein said little reflector space has reflecting electrode, and described reflecting electrode is for constituting the part of described storage capacitors.
According to structure of the present invention, also comprise: black matrix", be arranged at described second substrate, and corresponding to described storage capacitors setting, described black matrix" has opening, described first opening is used for the ambient light line and is entered described display panels corresponding to described reflecting electrode, makes the described extraneous light of described reflective electrodes reflects with the light source as described display panels.
According to structure of the present invention, one of them of wherein said first substrate and described second substrate is provided with the colorama resistance layer.
Another object of the present invention is to provide a kind of display device, comprise: drive circuit area; And described dot structure, be electrically connected with described drive circuit area.
According to display device of the present invention, the material of wherein said pixel electrode comprises and penetrates material, reflection material or above-mentioned combination.
According to display device of the present invention, also comprise second substrate and correspond to described first substrate, and described second substrate has common electrode on it; And liquid crystal layer, be arranged between described first substrate and described second substrate.
According to display device of the present invention, also comprise black matrix", be formed at described second substrate, and have at least one opening, corresponding at least one of described a plurality of little echo areas.
According to display device of the present invention, also comprise the colorama resistance layer, be arranged between described first substrate and second substrate, on second substrate or between first substrate and the described dielectric layer.
According to display device of the present invention, the specific inductive capacity of wherein said dielectric layer is for being less than or equal to 3.5 in fact.
According to display device of the present invention, the thickness of wherein said dielectric layer is essentially 1.7 microns (μ m)～2 microns (μ m).
According to display device of the present invention, wherein said little reflector space has reflecting electrode, and described reflecting electrode system constitutes the part of described storage capacitors.
According to display device of the present invention, also comprise: black matrix", be arranged at described second substrate, and corresponding to described storage capacitors setting, described black matrix" has opening, described first opening is used for the ambient light line and is entered described display panels corresponding to described reflecting electrode, makes the described extraneous light of described reflective electrodes reflects with the light source as described display panels.
According to display device of the present invention, one of them of wherein said first substrate and described second substrate is provided with the colorama resistance layer.
Another object of the present invention is to provide a kind of electrooptical device, comprise: aforesaid display device; And electronic component links to each other with described display device.
The specific embodiment of dot structure provided by the invention can be a kind of liquid crystal indicator.
The invention provides a kind of liquid crystal indicator, utilize script penetration product at electric capacity or these aperture opening ratios that originally do not use of drive circuit area, zone and the further voltage dividing potential drop mechanism that imports as little reflection make echo area and penetrating region can obtain preferable optical property simultaneously.Liquid crystal indicator of the present invention comprises: drive circuit area; And pixel region, be electrically connected with this drive circuit area, and this pixel region comprises: the micro-reflection type dot structure, this micro-reflection type dot structure comprises reflecting electrode; The penetration dot structure, this penetration dot structure comprises pixel electrode; And dielectric layer is covered on this reflecting electrode, and this pixel electrode is arranged on this dielectric layer surface, and is connected with this reflecting electrode.
According to another preferred embodiment of the present invention, liquid crystal indicator of the present invention comprises: first substrate comprises: first substrate; Conductive layer is formed on this first substrate; Insulation course is on this first substrate and cover this conductive layer; Reflecting electrode is arranged on this insulation course, wherein this conductive layer, insulation course, and the formed stacked structure of reflecting electrode constitute storage capacitors; Dielectric layer with contact hole is formed on this insulation course, and covers this storage capacitors, wherein the reflecting electrode of this contact hole exposed portions serve; Reach pixel electrode and be formed on this dielectric layer, be electrically connected with this reflecting electrode by this contact hole; Second substrate be arranged in parallel with this first substrate, comprising: common electrode is arranged on this second substrate.And liquid crystal layer, be arranged between this first substrate and this second substrate.
The present invention can promote contrast of LCD.
For above-mentioned purpose of the present invention, feature can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Description of drawings
Fig. 1 is for showing the synoptic diagram of the pixel electrode in the known semi-penetrating semi-reflecting type liquid crystal displaying device.
Fig. 2 is for showing the synoptic diagram schematic top plan view of the described semi-penetrating semi-reflecting type liquid crystal displaying device of preferred embodiment of the present invention.
Fig. 3 a to 3c is for showing along the cross-sectional view of the I-I ' dotted line of Fig. 2.
Fig. 4 a to 4c is the schematic top plan view of difference Fig. 3 a to 3c, in order to black matrix", colored filter to be described, to reach the relation between the opening.
Fig. 5 is the voltage (V) of its clear area of the described liquid crystal indicator of demonstration a preferred embodiment of the present invention and the curve of penetrance.
Fig. 6 is the voltage (V) of its echo area of the described liquid crystal indicator of demonstration a preferred embodiment of the present invention and the curve of reflectivity.
Fig. 7 is for showing the described electrooptical device of a preferred embodiment of the present invention.
Wherein, description of reference numerals is as follows:
The substrate of 10～back side; 12～positive substrate;
14～liquid crystal layer; 16～reflecting electrode;
18～pixel electrode; 20～echo area;
22～clear area; 24～backlight light;
26～external light source light; 100～liquid crystal indicator;
112～gate line; 114～data line;
116～grid; 117～thin film transistor (TFT);
120～display panels; 130～the first substrates;
131～the first substrates; 133～insulation course;
135～pixel electrode; 134～dielectric layer;
137～storage capacitors; 138～contact hole;
140～the second substrates; 141～the second substrates;
142～black matrix"; 142a～opening;
143～colored filter; 143a～opening;
144～common electrode; 145～alignment film;
150～liquid crystal layer; 160～module backlight;
170～the first Polarizers; 180～the second Polarizers;
300～electronic component; 400～electrooptical device;
L1～extraneous light; L2～internal light.
Embodiment
Below be the semi-penetrating semi-reflecting type liquid crystal displaying device synoptic diagram that illustrates according to a preferred embodiment of the present invention, diagram is to omit unnecessary element, with the clear embodiments of the invention that show.
Please refer to Fig. 2, be a kind of liquid crystal indicator according to application examples of the present invention, the schematic top plan view of its pixel region with micro-reflection type dot structure.This pixel region comprises gate line 112, and itself and data line 114 are staggered to define the array of a plurality of pixel regions.Each pixel region has at least one switching device 117 and is connected in the storage capacitors 137 of switching device 117.Switching device 117, preferably, for example: thin film transistor (TFT) optionally, comprises bottom gate polar form (as: BCE, I-stopper etc.), top grid type (as: LTPS etc.) or above-mentioned combination.This thin film transistor (TFT) comprise at least one grid 116, source/drain electrode (mark), and in the active layer (not shown) between grid 116 and source/drain electrode.Wherein, grid 116 is connected in gate line 112.Source/drain electrode is connected in data line 114.The material of active layer comprises siliceous monocrystal material, siliceous polycrystalline material, siliceous micro crystal material, siliceous non-crystalline material or other material or above-mentioned combination.Have pixel electrode 135 in each pixel region, and be electrically connected to this storage capacitors 137.Please refer to Fig. 3 a, be the diagrammatic cross-section of Fig. 2, show this micro-reflection type dot structure along I-I ' tangent line.
According to embodiments of the invention, little reflector space is that to be arranged at storage capacitors 137 with little reflector space be example, but be not limited thereto, little reflector space optionally is arranged at switching device 117 (as: thin film transistor (TFT) (TFT)), electric capacity (CST) 137, and at least one of signal wire (comprising data line 114 and gate line 112).And the hole that corresponds to little reflector space also can be arranged on colored filter, black matrix" or above-mentioned combination.In this preferred embodiment, be to use capacitor regions (not mark) to illustrate, and import voltage dividing potential drop mechanism as little echo area with storage capacitors 137, make echo area and penetrating region can obtain preferable optical property simultaneously.This liquid crystal indicator 100 comprises display panels 120, module backlight 160, first Polarizer 170 and second Polarizer 180.Display panels 120 comprises first substrate 130, second substrate 140 and liquid crystal layer 150.First substrate 130 comprises first substrate 131, storage capacitors 137, insulation course 133, pixel electrode 135, reaches dielectric layer 134.Storage capacitors 137 is arranged on first substrate 131, and by storage capacitors electrode 132, insulation course 133, and gate line 136 constituted.Dielectric layer 134 is arranged on the insulation course 133, and the storage capacitors electrode 132 of cover part, and dielectric layer 134 has contact hole 138.Pixel electrode 135 is arranged on the dielectric layer 134 of part, and an end of pixel electrode 135 is electrically connected with storage capacitors electrode 132 by contact hole 138.Second substrate 140 and first substrate 130 be arranged in parallel in fact, and comprise second substrate 141, black matrix" 142 and common electrode 144.Black matrix" 142 is arranged on second substrate 141, black matrix" 142 has opening 142a, and opening is provided with corresponding to storage capacitors 137, and black matrix" 142 has opening 142a, please is the relativeness schematic top plan view of this black matrix" 142 and this opening 142a together with reference to Fig. 4 a.Wherein, black matrix" 142 also can be made of other light non-transmittable layers, comprise organic material layer (as: coloured photoresistance or other materials), inorganic material, reflective metals (as gold, silver, copper, iron, tin, lead, molybdenum, neodymium, titanium, tantalum, tungsten or other materials or above-mentioned nitride or above-mentioned oxide or above-mentioned oxides of nitrogen or above-mentioned alloy or above-mentioned combination) or above-mentioned combination, and this colored filter 143 is exposed in the zone outside this black matrix" 142.Opening 142a is corresponding to storage capacitors electrode 132 and pixel electrode 135 parts that are electrically connected with storage capacitors electrode 132, and it is provided with respect to storage capacitors 137 tops.Opening 142a uses for ambient light line L1 and enters display panels 120, make storage capacitors electrode 132 as reflecting extraneous ray of reflecting electrode with light source as display panels 120.Common electrode 144 is arranged on second substrate 141, and covers black matrix" 142 and opening 142a.Liquid crystal layer 150 is arranged between first substrate 130 and second substrate 140.Module 160 backlight is arranged under the display panels 120 and is adjacent to first substrate 131, in order to providing internal light L2 to display panels 120, and further penetrates this pixel electrode 135, is sent to the external world.First Polarizer 170 is arranged between module 160 backlight and the display panels 120.Second Polarizer 180 is arranged on the display panels 120, and is adjacent to second substrate 140.Wherein, contact hole 138 positions optionally are arranged in the projected area of opening 142a, contact hole 138 positions are that part is arranged in the projected area of opening 142a or contact hole 138 positions are that part is arranged at outside the projected area of opening 142a.Wherein, the light source of module backlight comprises pointolite (as: Organic Light Emitting Diode, inorganic light-emitting diode or other type or above-mentioned combination), fluorescent tube (as: cathode fluorescent tube, outer electrode fluorescent tube, thermal cathode fluorescent tube, plane fluorescent tube or other type), electroluminescence source, surface contact light emitting source (as: CNT light emitting source or other type) or other type or above-mentioned combination.
The material of this storage capacitors electrode 132 comprises aluminium (Al), gold (Au), silver (Ag), chromium (Cr), molybdenum (Mo), niobium (Nb), titanium, tantalum, tungsten, neodymium or above-mentioned alloy or other material or above-mentioned combination; The material of at least one of insulation course 133 and dielectric layer 134 comprises inorganic material (as: Si oxide, silicon nitride, silicon oxides of nitrogen, silit, hafnia or other material or above-mentioned combination), organic material (as: photoresistance, poly-propionyl ether (polyarylene ether; PAE), polyamides class, polyesters, polyalcohols, polyalkenes, benzocyclobutene (benzocyclclobutene; BCB), HSQ (hydrogensilsesquioxane), MSQ (methyl silesquioxane), silica hydrocarbons (SiOC-H) or other material or above-mentioned combination) or above-mentioned combination.It should be noted that, this reflecting electrode is for constituting the part of this storage capacitors, and for reach import voltage dividing potential drop mechanism so that the optical phase put-off of penetrating region and echo area can differ to 1/4 λ, must form dielectric layer 134 and cover this storage capacitors electrode 132, with the electric field that produces in the liquid crystal layer 150 in accommodation reflex district as reflecting electrode with specific thicknesses and specific inductive capacity.In manufacture method embodiment, this dielectric layer 134 preferably, is to implement example with the organic material, and its specific inductive capacity is less than or equal to 3.5 in fact, and thickness is that about 1.7 μ m are between about 2 μ m.Certainly, structural design according to embodiments of the invention, selecting for use of dielectric layer 134, optionally change its material (as: organic material, inorganic or above-mentioned combination), dielectric coefficient (as: approximately less than 3.5 or approximately greater than 3.5 or other material), thickness (as: approximately less than or approximately greater than 2 μ m or approximate 2 μ m or other thickness) wherein at least one.
In the design of optics, we change and adopt the up and down almost parallel design of polaroid, when having made driven, the phasic difference value that penetrates and reflect is about 1/2nd wave plates, be that light can't pass through under the operator scheme, when giving driven, the liquid crystal molecule of penetrating region is parallel to direction of an electric field, makes its desirable presenting almost not have the phasic difference value.In preferred embodiment of the present invention, show in order to carry out image, can apply about 0 volt voltage respectively to common electrode 144, and apply about 4 volts voltage to pixel electrode 135 and storage capacitors electrode 132 by data line.There is not the obstruct of dielectric layer 134 between pixel electrode 135 and the liquid crystal layer 150, so the potential difference (PD) that is subjected at the liquid crystal layer 150 of 144 of pixel electrode 135 and common electrodes is near about 4 volts; In addition, owing to be situated between between storage capacitors electrode 132 (as: reflecting electrode) and the liquid crystal layer 150 this dielectric layer with specific thicknesses 134 is arranged, this storage capacitors electrode 132 can be by mode (the coupling capacitance of dividing potential drop, multi-com or the like), make liquid crystal layer 150 suffered potential difference (PD) 144 of storage capacitors electrode 132 (as: reflecting electrode) and common electrodes because the blocking effect of dielectric layer drops to about 2 volts, it almost equals to have only half voltage of penetrating region in fact, therefore can make the phasic difference that a little is about quarter-wave plate.In other words, the clean of dielectric layer can make the voltage difference of little echo area be equal to or less than the voltage of penetrating region in fact every effect.Under this structure, reflect and penetrate optimization simultaneously, produce high to (dual gap) liquid crystal efficient about the same when and at interval.Specific operation voltage disclosed by the invention only is related embodiment, in fact has many operating voltages to operate liquid crystal indicator in order to drive.
According to above-mentioned, the present invention reaches the effect of voltage dividing potential drop mechanism by this dielectric layer 134, and the distribution of control equipotential line can produce electric field in liquid crystal layer, and it has different electric field intensity respectively in reflection and clear area.According to the embodiment of the invention, electric field intensity in the echo area is less than the electric field intensity in the clear area, therefore, can revise the effective birefraction Δ of the liquid crystal n in echo area and the clear area, with control and the d Δ n product of regulating decision cell delay characteristic, to obtain comparatively ideal optical property in echo area and clear area.In operating process, liquid crystal display is driven according to reversing mode usually, and promptly per two show that continuously picture frame applies the picture signal of counter-rotating bias voltage to each pixel.
Please refer to Fig. 5, show the voltage (V) of its clear area of the described liquid crystal indicator of preferred embodiment of the present invention and the curve of penetrance, by among the figure as can be known, the penetrance in the time of about 4 volts is about 0.33, and bright attitude phasic difference value is about 1/2nd wave plates; In addition, please refer to Fig. 6, show the voltage (V) of this its echo area of liquid crystal indicator and the curve of reflectivity, its reflectivity is about 0.33 when current potential is about 2 volts, and bright attitude phasic difference value is about quarter-wave plate.
LCD of the present invention can be vertical orientation, and (vertical alignment, VA) type display panels, and can be little reflective display panel are applicable to drive vertically aligned liquid crystal, but are not limited to this kind of display panels.Moreover display panels forms the echo area in the zone of storage capacitors correspondence, and display panels forms transmission area in the zone of pixel electrode correspondence.When pixel electrode is applied in voltage, dielectric layer is in order to carry out the effect of dividing potential drop to the voltage of echo area liquid crystal layer, make display panels be matched with voltage and transmittance (V-T) relation curve of display panels on pixel electrode, and then promote contrast of LCD in voltage on the reflecting electrode and reflecting rate (V-R) relation curve.
The present invention compares with known little reflection technology, known technology must add last layer " interior polaroid " with as internal reflection (be used for modulation L1 light), and the present invention is the design that utilizes the voltage dividing potential drop, so do not need to add polaroid in the last layer, can directly reach light modulation to internal reflection.In addition, the liquid crystal molecule that the above embodiment of the present invention is used preferably, is to have the liquid crystal that windup-degree (Twist angle) is about 0 degree, also is referred to as electric power control birefringence mode (Electrically ControlledBirefringence mode; ECB mode) liquid crystal.
Structure of the present invention forms the dielectric layer of specific thicknesses above electric capacity, it uses the effect that is intended to the voltage of echo area liquid crystal is carried out dividing potential drop, to reach the saturation voltage (saturationvoltage) identical with penetrating region, and penetrate and reflecting electrode owing to still have the fraction area to have concurrently on the echo area, therefore what critical voltage (threshold voltage) also can be with penetrating region is approaching, so can obtain higher reflection contrast.
Please refer to Fig. 7, can connect into electrooptical device 400 with electronic component 300 by the described liquid crystal indicator 100 of the foregoing description.Electronic component 300 comprises as control element, executive component, treatment element, input element, memory cell, driving element, light-emitting component, protecting component, sensing element, detecing element or other function element or above-mentioned combination.And the type of electrooptical device 400 comprises the device in portable product (as mobile phone, video camera, camera, notebook computer, game machine, wrist-watch, music player, electronics frame, electronic mail transceiver, map navigator or similar products like), video and audio product (as audio-visual projector or similar products like), screen, TV, billboard, the projector etc.
Moreover, the colored filter of the above embodiment of the present invention, black matrix" or above-mentioned combination are arranged on second substrate, but be not limited thereto, colored filter, black matrix" wherein at least one also optionally is arranged at wherein at least one of first substrate and second substrate.For example, colored filter is arranged in first substrate, black matrix" is arranged in second substrate, colored filter and black matrix" is arranged in first substrate, black matrix" is arranged in first substrate, and colored filter is arranged in second substrate or alternate manner.Wherein, the material of the black matrix" of the above embodiment of the present invention comprises metal material (as: aluminium (Al), gold (Au), silver (Ag), chromium (Cr), molybdenum (Mo), niobium (Nb), titanium, tantalum, tungsten, neodymium or above-mentioned alloy or other material or above-mentioned combination), organic material (as: the piling up of at least two colorama resistance layers, black light resistance layer or other material), inorganic (as: Si oxide, silicon nitride, silicon oxides of nitrogen, silit, hafnia or other material or above-mentioned combination) or above-mentioned combination.In addition, the material of the pixel electrode of the above embodiment of the present invention is with transparent material (as: indium tin oxide, the aluminium zinc oxide, the aluminium tin-oxide, indium-zinc oxide, the cadmium tin-oxide, or other material, or above-mentioned combination) for implementing example, but be not limited thereto, the material of pixel electrode can be partially transparent material (as: indium tin oxide, the aluminium zinc oxide, the aluminium tin-oxide, indium-zinc oxide, the cadmium tin-oxide, or other material, or above-mentioned combination) and another part reflection material (as: gold, silver, copper, iron, tin, plumbous, cadmium, molybdenum, tungsten, neodymium, titanium, tantalum, hafnium, or other material, or above-mentioned oxide, or above-mentioned nitride, or above-mentioned oxides of nitrogen, or above-mentioned alloy, or above-mentioned combination).And, enforcement of the present invention is at gate line (capacitor on gate line with electric capacity, Cs on gate line) for implementing example, but be not limited thereto, also optionally use electric capacity (capacitor oncommon line, Cs on common) or have above-mentioned electric capacity simultaneously on common electrode.
Though the present invention with preferred embodiment openly as above; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing various variations and modification, so protection scope of the present invention is as the criterion when looking the accompanying Claim person of defining.
Claims (21)
1. dot structure comprises:
First substrate;
Many signal line are formed in the described substrate, to distinguish a plurality of pixel regions;
At least one switching device is formed in each pixel region;
At least one storage capacitors is formed in each pixel region, and is connected in described switching device;
Dielectric layer is covered in the described substrate;
Pixel electrode is formed on the described dielectric layer, and is connected in switching device in each pixel region and at least one of storage capacitors; Wherein, the electrode of at least one of described signal wire, described switching device, described storage capacitors is as little reflector space.
2. structure as claimed in claim 1, wherein, the material of described pixel electrode comprises and penetrates material, reflection material or above-mentioned combination.
3. structure as claimed in claim 1 also comprises:
Second substrate corresponds to described first substrate, and described second substrate has common electrode on it; And
Liquid crystal layer is arranged between described first substrate and described second substrate.
4. structure as claimed in claim 3 also comprises black matrix", is formed at described second substrate, and has at least one opening, corresponding at least one of described a plurality of little echo areas.
5. structure as claimed in claim 4 also comprises the colorama resistance layer, is arranged between described first substrate and second substrate, on second substrate or between first substrate and the described dielectric layer.
6. structure as claimed in claim 1, the specific inductive capacity of wherein said dielectric layer is less than or equal to 3.5 in fact.
7. structure as claimed in claim 1, the thickness of wherein said dielectric layer are in fact between 1.7 microns～2 microns.
8. structure as claimed in claim 1, wherein said little reflector space has reflecting electrode, and described reflecting electrode constitutes the part of described storage capacitors.
9. structure as claimed in claim 8 also comprises:
Black matrix", be arranged at described second substrate, and corresponding to described storage capacitors setting, described black matrix" has opening, described first opening is corresponding to described reflecting electrode, use for the ambient light line and enter described display panels, make the described extraneous light of described reflective electrodes reflects with light source as described display panels.
10. structure as claimed in claim 9, one of them of wherein said first substrate and described second substrate is provided with the colorama resistance layer.
11. a display device comprises:
Drive circuit area; And
Dot structure as claimed in claim 1 is electrically connected with described drive circuit area.
12. comprising, display device as claimed in claim 11, the material of wherein said pixel electrode penetrate material, reflection material or above-mentioned combination.
13. display device as claimed in claim 11 also comprises second substrate and corresponds to described first substrate, and described second substrate has common electrode on it; And liquid crystal layer, be arranged between described first substrate and described second substrate.
14. display device as claimed in claim 13 also comprises black matrix", is formed at described second substrate, and has at least one opening, corresponding at least one of described a plurality of little echo areas.
15. display device as claimed in claim 14 also comprises the colorama resistance layer, is arranged between described first substrate and second substrate, on second substrate or between first substrate and the described dielectric layer.
16. display device as claimed in claim 11, the specific inductive capacity of wherein said dielectric layer is less than or equal to 3.5 in fact.
17. display device as claimed in claim 11, the thickness of wherein said dielectric layer are in fact between 1.7 microns～2 microns.
18. display device as claimed in claim 11, wherein said little reflector space has reflecting electrode, and described reflecting electrode constitutes the part of described storage capacitors.
19. display device as claimed in claim 18 also comprises:
Black matrix", be arranged at described second substrate, and corresponding to described storage capacitors setting, described black matrix" has opening, described first opening is corresponding to described reflecting electrode, use for the ambient light line and enter described display panels, make the described extraneous light of described reflective electrodes reflects with light source as described display panels.
20. display device as claimed in claim 19, one of them of wherein said first substrate and described second substrate is provided with the colorama resistance layer.
21. an electrooptical device comprises:
Display device as claimed in claim 11; And electronic component links to each other with described display device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710126299 CN101067704A (en) | 2007-06-29 | 2007-06-29 | Picture element structure, display device and photoelectric device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710126299 CN101067704A (en) | 2007-06-29 | 2007-06-29 | Picture element structure, display device and photoelectric device |
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| CN101067704A true CN101067704A (en) | 2007-11-07 |
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| CN 200710126299 Pending CN101067704A (en) | 2007-06-29 | 2007-06-29 | Picture element structure, display device and photoelectric device |
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| CN (1) | CN101067704A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107179641A (en) * | 2017-06-05 | 2017-09-19 | 深圳市华星光电技术有限公司 | A kind of array base palte and preparation method thereof, liquid crystal display panel |
| CN107240589A (en) * | 2017-06-05 | 2017-10-10 | 深圳市华星光电技术有限公司 | A kind of array base palte and preparation method thereof, liquid crystal display panel |
| CN110603576A (en) * | 2017-05-12 | 2019-12-20 | 索尼公司 | Display device |
| CN111290161A (en) * | 2020-03-13 | 2020-06-16 | Tcl华星光电技术有限公司 | Liquid crystal display panel and preparation method thereof |
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2007
- 2007-06-29 CN CN 200710126299 patent/CN101067704A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110603576A (en) * | 2017-05-12 | 2019-12-20 | 索尼公司 | Display device |
| US11222875B2 (en) | 2017-05-12 | 2022-01-11 | Sony Corporation | Display apparatus |
| CN107179641A (en) * | 2017-06-05 | 2017-09-19 | 深圳市华星光电技术有限公司 | A kind of array base palte and preparation method thereof, liquid crystal display panel |
| CN107240589A (en) * | 2017-06-05 | 2017-10-10 | 深圳市华星光电技术有限公司 | A kind of array base palte and preparation method thereof, liquid crystal display panel |
| CN111290161A (en) * | 2020-03-13 | 2020-06-16 | Tcl华星光电技术有限公司 | Liquid crystal display panel and preparation method thereof |
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