CN108336140A - Metal oxide semiconductor field effect (PCC) power and manufacturing method with three-dimensional superjunction - Google Patents
Metal oxide semiconductor field effect (PCC) power and manufacturing method with three-dimensional superjunction Download PDFInfo
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- CN108336140A CN108336140A CN201710048573.5A CN201710048573A CN108336140A CN 108336140 A CN108336140 A CN 108336140A CN 201710048573 A CN201710048573 A CN 201710048573A CN 108336140 A CN108336140 A CN 108336140A
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- 230000005669 field effect Effects 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 91
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 229920005591 polysilicon Polymers 0.000 claims abstract description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 24
- 230000015556 catabolic process Effects 0.000 claims abstract description 15
- 239000011159 matrix material Substances 0.000 claims description 21
- 238000000407 epitaxy Methods 0.000 claims description 19
- 238000005468 ion implantation Methods 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000035755 proliferation Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
Abstract
The invention discloses a kind of metal oxide semiconductor field effect (PCC) powers and its manufacturing method with three-dimensional superjunction.The metal oxide semiconductor field effect (PCC) power includes a first metal layer, a basal layer, an epitaxial layer, multiple first groove wells, multiple second groove wells, multiple base structural layers, multiple polysilicon layers and a second metal layer.The part of a depletion region is formed between each first groove well and the epitaxial layer and between the base structural layer and the epitaxial layer of corresponding each first groove well, and remaining part of the depletion region is formed between the second groove well and the epitaxial layer of corresponding each first groove well.Therefore, the present invention can utilize the multiple second groove well to increase the breakdown voltage of the metal oxide semiconductor field effect (PCC) power and reduce the conducting resistance of the metal oxide semiconductor field effect (PCC) power.
Description
Technical field
The present invention relates to a kind of metal oxide semiconductor field effect (PCC) powers and its manufacturing method with three-dimensional superjunction, especially
It is related to a kind of breakdown voltage increasing the metal oxide semiconductor field effect (PCC) power and reduces the metal oxidation half
Imitate the metal oxide semiconductor field effect (PCC) power and its manufacturing method of the conducting resistance of (PCC) power in conductor field.
Background technology
In the prior art, as metal oxide semiconductor field effect (PCC) power (the power metal- with superjunction
Oxide-semiconductor field-effect transistor device) close when, the metal-oxide semiconductor
Field effect (PCC) power is to utilize the p type wells in the metal oxide semiconductor field effect (PCC) power and the PN between N-type epitaxial layer
The formed depletion region of junction bears the voltage between metal oxide semiconductor field effect (PCC) power drain electrode and source electrode.Work as institute
When stating the width increase of depletion region, the depletion region can bear the metal oxide semiconductor field effect (PCC) power drain electrode and source electrode
Between voltage also can with the width of the depletion region increase and increase.Because the depletion region is by the p type wells and institute
It states the effect of the horizontal proliferation between N-type epitaxial layer and is formed, so the width of the depletion region will be limited by the horizontal proliferation
Effect, causes the breakdown voltage of the metal oxide semiconductor field effect (PCC) power to be limited to the width of the depletion region.Therefore,
How to design makes the metal oxide semiconductor field effect (PCC) power that there is high-breakdown-voltage to become an important project.
Invention content
One embodiment of the invention, which discloses, a kind of there is the metal oxide semiconductor field effect (PCC) power of three-dimensional superjunction to include
One the first metal layer, a basal layer, an epitaxial layer, multiple first groove wells, multiple second groove wells, multiple base structural layers,
Multiple polysilicon layers and a second metal layer.The basal layer is formed on the first metal layer.The epitaxial layer is formed
On the basal layer.The multiple first groove well is formed among the epitaxial layer.Corresponding each first groove well
One base structural layer be formed on each first groove well and the epitaxial layer among, and each first groove well
The part of a depletion region is formed between the epitaxial layer and between described matrix structure sheaf and the epitaxial layer.Described in correspondence
One second groove well of each first groove well is formed under each first groove well, and the second groove well and institute
State remaining part that the depletion region is formed between epitaxial layer.Each polysilicon layer is formed in two adjacent base structural layers and described
On epitaxial layer, and each polysilicon layer is coated by an oxide layer.The second metal layer is formed in the multiple matrix
On structure sheaf and multiple oxide layers.The basal layer and the epitaxial layer have one first conduction type, and the multiple first
It is for increasing that groove well and the multiple second groove well, which have one second conduction type and the multiple second groove well,
The breakdown voltage (breakdown voltage) of the metal oxide semiconductor field effect (PCC) power and the reduction metal oxidation
The conducting resistance of semiconductcor field effect (PCC) power.
Another embodiment of the present invention discloses a kind of metal oxide semiconductor field effect (PCC) power with three-dimensional superjunction
Manufacturing method.The manufacturing method includes to form a basal layer on a first metal layer；An epitaxial layer is formed in the base
On bottom, wherein the epitaxial layer has one first conduction type；Multiple second grooves are formed among the epitaxial layer；It fills out
It fills the second epitaxy to the multiple second groove with one second conduction type and forms multiple second groove wells；Institute is deposited again
State epitaxial layer；Multiple first grooves are formed among the epitaxial layer；Fill the first epitaxy with second conduction type
Multiple first groove wells are formed to the multiple first groove, wherein each first groove well in the multiple first groove well
Ion doping concentration be less than the multiple second groove well in a corresponding second groove well ion doping concentration；It is formed
Multiple base structural layers are on the multiple first groove well and among the epitaxial layer；Form multiple polysilicon layers and one
Two metal layers are on the epitaxial layer and the multiple base structural layer；Each first groove well and the epitaxial layer it
Between and the base structural layer and the epitaxial layer of corresponding each first groove between form the part of a depletion region, and
Remaining part that the depletion region is formed between the corresponding second groove well and the epitaxial layer, wherein the multiple second
Groove well is for increasing the breakdown voltage of the metal oxide semiconductor field effect (PCC) power and reducing the metal oxidation half
Imitate the conducting resistance of (PCC) power in conductor field.
Another embodiment of the present invention discloses a kind of metal oxide semiconductor field effect (PCC) power with three-dimensional superjunction
Manufacturing method.The manufacturing method includes to form a basal layer on a first metal layer；An epitaxial layer is formed in the base
On bottom, wherein the epitaxial layer has one first conduction type；Multiple second grooves are formed in the way of an ion implantation
Well is among the epitaxial layer；The rest part of the epitaxial layer and multiple is formed in the way of a multilayer epitaxy and ion implantation
First groove well, wherein the multiple second groove well has one second conduction type with the multiple first groove well, and it is every
The ion doping that the ion doping concentration of one first groove well is less than a second groove well of corresponding each first groove is dense
Degree；Multiple base structural layers are formed on the multiple first groove well and among the epitaxial layer；Form multiple polysilicons
Layer and a second metal layer are on the epitaxial layer and the multiple base structural layer；Each first groove well and described
Between epitaxial layer and one is formed between the base structural layer and the epitaxial layer of corresponding each first groove well to exhaust
The part in area, and remaining part of the depletion region is formed between the second groove well and the epitaxial layer, wherein described more
A second groove well is for increasing the breakdown voltage of the metal oxide semiconductor field effect (PCC) power and reducing the metal
Aoxidize the conducting resistance of semiconductcor field effect (PCC) power.
A kind of metal oxide semiconductor field effect (PCC) power with three-dimensional superjunction disclosed in this invention and its manufacturer
Method.The metal oxide semiconductor field effect (PCC) power and the manufacturing method are the depletion regions for making to correspond to each first groove well
It can not only be formed laterally between each first groove well and an epitaxial layer, the matrix of corresponding each first groove well
Between structure sheaf and the epitaxial layer, and the second groove well of corresponding each first groove well and the epitaxial layer it
Between, it can more be formed in a longitudinal between the second groove well and the epitaxial layer.Therefore, compared to the prior art, institute of the present invention
Disclosed depletion region bigger causes the breakdown voltage of the metal oxide semiconductor field effect (PCC) power to increase with the depletion region
And increase.In addition, because the ion doping concentration of multiple second groove wells of the metal oxide semiconductor field effect (PCC) power
More than the ion doping concentration of multiple first groove wells of the metal oxide semiconductor field effect (PCC) power, and the multiple
The width of each second groove well of two groove wells is less than the width of the corresponding first groove well of the multiple first groove well, institute
With when the metal oxide semiconductor field effect (PCC) power is opened, because described of heap of stone between the multiple second groove well
The width of crystal layer increases, so the conducting resistance of the metal oxide semiconductor field effect (PCC) power can be lowered.
Description of the drawings
Fig. 1 is a kind of metal oxide semiconductor field effect work(with three-dimensional superjunction disclosed in the first embodiment of the present invention
The schematic diagram of rate component.
Fig. 2 is to illustrate when metal oxide semiconductor field effect (PCC) power is closed, each first groove well and epitaxial layer it
Between, between the base structural layer and epitaxial layer of corresponding each first groove well, with correspondence each first groove well
The schematic diagram of depletion region is formed between second groove well and epitaxial layer.
Fig. 3 is to illustrate when metal oxide semiconductor field effect (PCC) power is opened, and the first doped region is relative to the second doping
Area on one side formed first passage and the second doped region relative to the first doped region while form the schematic diagram of second channel.
Fig. 4 is a kind of metal oxide semiconductor field effect work(with three-dimensional superjunction disclosed in the second embodiment of the present invention
The schematic diagram of rate component.
Fig. 5-8 is that different embodiments of the invention illustrate that the upper of a metal oxide semiconductor field effect (PCC) power regards signal
Figure.
Fig. 9 is a kind of metal oxide semiconductor field effect work(with three-dimensional superjunction disclosed in the third embodiment of the present invention
The flow chart of the manufacturing method of rate component.
Figure 10 is the cross section of the metal oxide semiconductor field effect (PCC) power manufactured by the manufacturing method that illustrates according to Fig. 9
Schematic diagram.
Figure 11 is a kind of metal oxide semiconductor field effect with three-dimensional superjunction disclosed in the fourth embodiment of the present invention
The flow chart of the manufacturing method of (PCC) power.
Figure 12 is the crosscutting of the metal oxide semiconductor field effect (PCC) power manufactured by the manufacturing method that illustrates according to Figure 11
The schematic diagram in face.
Wherein, the reference numerals are as follows：
100,400 metal oxide semiconductor field effect (PCC) power
102 the first metal layers
104 basal layers
106,406 epitaxial layer
108 second metal layers
110,112,410,412 first groove well
114,116,118 polysilicon layer
120,122 second groove well
124,126 base structural layer
128,130,132 oxide layer
134 depletion regions
136 first passages
138 second channels
1242 matrixes
1244 impure wells
1246 first doped regions
1248 second doped regions
202,204,206,208 arrow
4102-4108 channeled layers
1002,1004 second groove
1006,1008 first groove
1202 ion beams
900-918,1100-1112 step
Specific implementation mode
Fig. 1 is please referred to, Fig. 1, which is one kind disclosed in the first embodiment of the present invention, has three-dimensional superjunction (three-
Dimensional super junction) metal oxide semiconductor field effect (PCC) power 100 schematic diagram.As shown in Figure 1,
Metal oxide semiconductor field effect (PCC) power 100 includes a first metal layer 102, a basal layer 104, an epitaxial layer 106 and one
Second metal layer 108.In addition, Fig. 1 is only shown in multiple first groove wells of metal oxide semiconductor field effect (PCC) power 100
First groove well 110,112, polysilicon layer 114 in multiple polysilicon layers of metal oxide semiconductor field effect (PCC) power 100,
116,118, the second groove well 120,122 in multiple second groove wells of metal oxide semiconductor field effect (PCC) power 100, with
And the base structural layer 124,126 in multiple base structural layers of metal oxide semiconductor field effect (PCC) power 100, wherein substrate
Layer 104 and epitaxial layer 106 have one first conduction type, and the multiple first groove well and the multiple second groove well have
One second conduction type, the ion doping concentration of basal layer 104 are more than the ion doping concentration and described the of epitaxial layer 106
One conductive aspect is N-type and the second conductive aspect is p-type.But it is N that the present invention, which is not limited to the described first conductive aspect,
Type and the second conductive aspect are p-types.In addition, the first metal layer 102 is metal oxide semiconductor field effect (PCC) power 100
Drain electrode, the multiple polysilicon layer is the grid and second metal layer 108 of metal oxide semiconductor field effect (PCC) power 100
It is the source electrode of metal oxide semiconductor field effect (PCC) power 100.As shown in Figure 1, basal layer 104 is formed in the first metal layer 102
On, epitaxial layer 106 is formed on basal layer 104, and first groove well 110,112 is formed among epitaxial layer 106, and corresponding the
The second groove well 120 of one groove well 110 is formed under first groove well 110 and among epitaxial layer 106, corresponding first ditch
The second groove well 122 of slot well 112 is formed under first groove well 112 and among epitaxial layer 106, base structural layer 124
Be formed on first groove well 110 and epitaxial layer 106 among, base structural layer 126 be formed on first groove well 112 and
Among epitaxial layer 106, polysilicon layer 116 is formed in two adjacent base structural layers (base structural layer 124,126) and epitaxial layer 106
On and second metal layer 108 be formed on the multiple base structural layer and multiple oxide layers, wherein the multiple
The ion doping concentration of each second groove well in two groove wells is more than one corresponding first in the multiple first groove well
Groove well ion doping concentration (such as the ion doping concentration of second groove well 120 be more than first groove well 110 ion mix
Miscellaneous concentration) and the width of each second groove well be less than width (such as the second ditch of the corresponding first groove well
The width of slot well 120 is less than the width of first groove well 110).In addition, the multiple first groove well and the multiple second ditch
Slot well be by produced by a deep trench (deep trench) back-filling way, it is described wherein in the deep trench back-filling way
Multiple first groove wells and the multiple second groove well can pass through epitaxy or chemical vapor deposition (chemical vapor
Deposition, CVD) etc. modes generate.In addition, as shown in Figure 1, polysilicon layer 114,116,118 respectively by oxide layer 128,
130,132 cladding.
As shown in Figure 1, base structural layer 124 include a matrix 1242, an impure well 1244, one first doped region 1246 and
One second doped region 1248.Matrix 1242 has second conduction type and is formed in (wherein base on first groove well 110
The width of body 1242 is more than the width of first groove well 110), impure well 1244 has second conduction type and is formed in base
Among body 1242 and the first doped region 1246 and the second doped region 1248 have first conduction type and are formed in doping
Among well 1244 and matrix 1242, the wherein ion doping concentration of matrix 1242 is dense more than the ion doping of first groove well 110
The ion doping concentration of degree and impure well 1244 is more than the ion doping concentration of matrix 1242.In addition, basal layer 104, epitaxy
Layer 106, matrix 1242, impure well 1244, the first doped region 1246 and the second doped region 1248 are by an ion implantation mode
And it is formed.In addition, contact (contact) of the impure well 1244 as matrix 1242.In addition, the structure of base structural layer 126 and
The structure of base structural layer 124, details are not described herein.
As shown in Fig. 2, when metal oxide semiconductor field effect (PCC) power 100 is closed, in the multiple first groove well
Each first groove well and epitaxial layer 106 between and corresponding each first groove well a base structural layer and epitaxy
Layer 106 between formed a depletion region part and the multiple second groove well in correspond to each first groove well
Remaining part of the depletion region is formed between one second groove well and epitaxial layer 106.Such as work as metal oxide semiconductor field effect
When (PCC) power 100 is closed, between first groove well 110 and epitaxial layer 106 and base structural layer 124 and epitaxial layer 106 it
Between formed between the part and second groove well 120 and epitaxial layer 106 of a depletion region 134 (being represented by dashed line) to be formed and exhaust
Remaining part in area 134.Therefore, as shown in Fig. 2, depletion region 134 can not only be formed laterally in first groove well 110 and epitaxial layer
Between 106 (arrow 202), (arrow 204) and second groove well 120 and of heap of stone between base structural layer 124 and epitaxial layer 106
Between crystal layer 106 (arrow 206), depletion region 134 can more be formed in a longitudinal in (arrow between second groove well 120 and epitaxial layer 106
208).Because depletion region 134 can be more formed in a longitudinal between second groove well 120 and epitaxial layer 106, compared to existing skill
Art, 134 bigger of depletion region lead to the breakdown voltage (breakdown of metal oxide semiconductor field effect (PCC) power 100
Voltage) increase with depletion region 134 and increase.
In addition, as shown in figure 3, when metal oxide semiconductor field effect (PCC) power 100 is opened, 1246 phase of the first doped region
For one first passage 136 of formation on one side of the second doped region 1248 and the second doped region 1248 relative to the first doped region 1246
One second channel 138 of formation on one side.Because the ion doping concentration of the multiple second groove well is more than the multiple first
The ion doping concentration of groove well, and the width of each second groove well of the multiple second groove well is less than the multiple the
In one groove well corresponding first groove well width (such as the width of second groove well 120 be less than first groove well 110 width
Degree), so when metal oxide semiconductor field effect (PCC) power 100 is opened, because between the multiple second groove well
The width of epitaxial layer 106 increases, so the conducting resistance of metal oxide semiconductor field effect (PCC) power 100 can be lowered.In addition,
It is known to those skilled in the art known to this field has that metal oxide semiconductor field effect (PCC) power 100, which opens and closes operating principle,
Skill, details are not described herein.
Fig. 4 is please referred to, Fig. 4 is a kind of metal oxidation half with three-dimensional superjunction disclosed in the second embodiment of the present invention
Imitate the schematic diagram of (PCC) power 400 in conductor field.As shown in figure 4, metal oxide semiconductor field effect (PCC) power 400 and metal oxidation
Semiconductcor field effect (PCC) power 100 the difference is that each first groove well of metal oxide semiconductor field effect (PCC) power 400
(such as first groove well 410,412) and an epitaxial layer 406 are by multilayer epitaxy and ion implantation (multi-epitaxy＆
Implantation) produced by mode, the ion doping concentration of the channeled layer 4102-4108 wherein in first groove well 410 and
Width may be the same or different.Such as in one embodiment of this invention, the ion doping concentration of channeled layer 4102-4108 is by upper
Gradually increase down and channeled layer 4102-4108 it is of same size (as shown in Figure 4).In addition, in another embodiment of the present invention
In, the ion doping concentration of channeled layer 4102-4108 be gradually increase from top to bottom and the width of channeled layer 4102-4108 be by
On gradually decrease down.In addition, metal oxide semiconductor field effect (PCC) power 400 increases depletion region and reduces the original of conducting resistance
Reason and metal oxide semiconductor field effect (PCC) power 100 are identical, and details are not described herein.
Fig. 5-8 is please referred to, Fig. 5-8 is that different embodiments of the invention illustrate a metal oxide semiconductor field effect (PCC) power
Upper schematic diagram, wherein Fig. 5-8 only shows multiple first groove wells, more of the metal oxide semiconductor field effect (PCC) power
A second groove well, multiple polysilicon layers and multiple contacts.As shown in figure 5, the multiple first groove well, the multiple second
Groove well and the multiple polysilicon layer are strip (stripe) kenel；As shown in fig. 6, the multiple first groove well and described
Multiple polysilicon layers are strip kenel and the multiple second groove well is island (island) kenel；As shown in fig. 7, institute
It states multiple first groove wells and the multiple polysilicon layer is strip kenel and the multiple second groove well is round point shape
(dot) kenel；As shown in figure 8, the multiple first groove well and the multiple polysilicon layer are the (cross that is staggered
Arrangement) kenel and the multiple second groove well are rectangle kenel.In addition, the present invention is not limited to Fig. 5-8
Shown in the multiple second groove well kenel, that is to say, that as long as the multiple second groove well is with the multiple first
Groove well changes, and the size of the multiple second groove well is less than as the size of the multiple first groove well is to fall into this
The range of invention.
Please refer to Fig. 2,9,10, Fig. 9 be a kind of metal with three-dimensional superjunction disclosed in the third embodiment of the present invention
Aoxidize the flow chart of the manufacturing method of semiconductcor field effect (PCC) power.The manufacturing method of Fig. 9 is illustrated using Figure 10, detailed step
It is as follows：
Step 900：Start；
Step 902：Basal layer 104 is formed on the first metal layer 102；
Step 904：Epitaxial layer 106 is formed on basal layer 104；
Step 906：Multiple second grooves are formed among epitaxial layer 106；
Step 908：Second epitaxy to the multiple second groove of the filling with second conduction type forms multiple
Second groove well；
Step 910：Epitaxial layer 106 is deposited again；
Step 912：Multiple first grooves are formed among epitaxial layer 106；
Step 914：First epitaxy to the multiple first groove of the filling with second conduction type forms multiple
First groove well；
Step 916：Complete metal oxide semiconductor field effect (PCC) power 100；
Step 918：Terminate.
In step 902 and step 904, as shown in Figure 10 (a), basal layer 104 is formed on the first metal layer 102,
And epitaxial layer 106 is formed on basal layer 104.In step 906, it is formed on basal layer 104 in epitaxial layer 106
Afterwards, the multiple second groove (second groove 1002,1004 as shown in Figure 10 (b)) is etched among epitaxial layer 106.
In step 908, by the deep trench back-filling way fill second epitaxy formed to the multiple second groove it is described more
A second groove well (second groove well 120,122 as shown in Figure 10 (c)).In step 910, as shown in Figure 10 (d), again
Deposit epitaxial layer 106.In step 912, the multiple first groove is etched among epitaxial layer 106 (shown in such as Figure 10 (e)
First groove 1006,1008).In step 914, first epitaxy is filled to described by the deep trench back-filling way
Multiple first grooves form the multiple first groove well (first groove well 110,112 as shown in Figure 10 (f)).In step
In 916, as shown in Figure 10 (g), metal oxide semiconductor field effect (PCC) power 100 is completed, that is to say, that form the multiple base
Body structure sheaf is on the multiple first groove well and among epitaxial layer 106, and forms multiple polysilicon layers and the second gold medal
Belong to layer 108 on epitaxial layer 106 and the multiple base structural layer, wherein forming the multiple base structural layer in described more
On a first groove well and among epitaxial layer 106, and multiple polysilicon layers and second metal layer 108 are formed in epitaxial layer
106 and the multiple base structural layer on to be this field have skill known to known those skilled in the art, details are not described herein.Separately
Outside, it is N that the ion doping concentration of basal layer 104, which is more than the ion doping concentration of epitaxial layer 106 and the first conductive aspect,
Type and the second conductive aspect are p-types.But it is that N-type and described second are led that the present invention, which is not limited to the described first conductive aspect,
Electric aspect is p-type.In addition, the first metal layer 102 is the drain electrode of metal oxide semiconductor field effect (PCC) power 100, it is the multiple
Polysilicon layer is the grid of metal oxide semiconductor field effect (PCC) power 100 and second metal layer 108 is that metal oxidation is partly led
Imitate the source electrode of (PCC) power 100 in body field.In addition, the ion doping of each second groove well in the multiple second groove well is dense
Degree is more than ion doping concentration (such as the second groove well 120 of a corresponding first groove well in the multiple first groove well
Ion doping concentration be more than first groove well 110 ion doping concentration) and the width of each second groove well it is small
In the width (such as the width of second groove well 120 is less than the width of first groove well 110) of the corresponding first groove well.
In addition, as shown in Fig. 2, when metal oxide semiconductor field effect (PCC) power 100 is closed, 110 He of first groove well
The part of depletion region 134 (being represented by dashed line) is formed between epitaxial layer 106 and between base structural layer 124 and epitaxial layer 106,
And remaining part of depletion region 134 is formed between second groove well 120 and epitaxial layer 106.Therefore, as shown in Fig. 2, depletion region
134 can not only be formed laterally between first groove well 110 and epitaxial layer 106 (arrow 202), base structural layer 124 and epitaxy
Between layer 106 between (arrow 204) and second groove well 120 and epitaxial layer 106 (arrow 206), depletion region 134 can more be indulged
To being formed between second groove well 120 and epitaxial layer 106 (arrow 208).Because depletion region 134 can more be formed in a longitudinal in second
Between groove well 120 and epitaxial layer 106, so compared to the prior art, 134 bigger of depletion region leads to metal-oxide semiconductor
The breakdown voltage of field effect (PCC) power 100 increases with depletion region 134 and is increased.In addition, because the multiple second groove well
Ion doping concentration is more than the ion doping concentration of the multiple first groove well, and every the 1 of the multiple second groove well the
The width of two groove wells is less than width (such as the second groove well of corresponding first groove well in the multiple first groove well
120 width is less than the width of first groove well 110), so when metal oxide semiconductor field effect (PCC) power 100 is opened,
Because the width of the epitaxial layer 106 between the multiple second groove well increases, metal oxide semiconductor field effect power
The conducting resistance of component 100 can be lowered.
Please refer to Figure 11,12, Figure 11 is a kind of metal with three-dimensional superjunction disclosed in the fourth embodiment of the present invention
Aoxidize the flow chart of the manufacturing method of semiconductcor field effect (PCC) power.The manufacturing method of Figure 11 is illustrated using Figure 12, is walked in detail
It is rapid as follows：
Step 1100：Start；
Step 1102：Basal layer 104 is formed on the first metal layer 102；
Step 1104：Epitaxial layer 106 is formed on basal layer 104；
Step 1106：Multiple second groove wells are formed in the way of an ion implantation among epitaxial layer 106；
Step 1108：The rest part and multiple the of epitaxial layer 106 is formed in the way of a multilayer epitaxy and ion implantation
One groove well；
Step 1110：Complete metal oxide semiconductor field effect (PCC) power 400；
Step 1112：Terminate.
The embodiment of Figure 11 and the embodiment of Fig. 9 the difference is that in a step 1106, as shown in Figure 12 (b), utilizing institute
The multiple second groove well will be formed among the injection epitaxial layer 106 of ion beam 1202 by stating ion implantation mode；In step 1108
In, as shown in Figure 12 (c), (d), (e), its remaining part of epitaxial layer 106 is formed in the way of the multilayer epitaxy and ion implantation
Point and the multiple first groove well.As shown in Figure 12 (f), the ion of the channeled layer 4102-4108 in first groove well 410 is mixed
Miscellaneous concentration and width may be the same or different.Such as in one embodiment of this invention, the ion doping of channeled layer 4102-4108 is dense
Degree be gradually increase from top to bottom and channeled layer 4102-4108 it is of same size.In addition, in another embodiment of the invention,
The ion doping concentration of channeled layer 4102-4108 is to gradually increase from top to bottom and the width of channeled layer 4102-4108 is by upper
It gradually decreases down.
In conclusion the metal oxide semiconductor field effect (PCC) power and its system with three-dimensional superjunction disclosed in this invention
The method of making is to make the depletion region for corresponding to each first groove well that can not only be formed laterally in each first groove well and described
Between epitaxial layer, between the base structural layer and the epitaxial layer of corresponding each first groove well, and it is corresponding described every
Between the second groove well and the epitaxial layer of one first groove well, it can more be formed in a longitudinal in the second groove well and described of heap of stone
Between crystal layer.Therefore, compared to the prior art, depletion region bigger disclosed in this invention, leads to the metal-oxide semiconductor
The breakdown voltage of field effect (PCC) power increases with the depletion region and is increased.In addition, because the multiple second groove well from
Sub- doping concentration is more than the ion doping concentration of the multiple first groove well, and every the 1 second of the multiple second groove well
The width of groove well is less than the width of the corresponding first groove well of the multiple first groove well, so when metal oxidation half
When (PCC) power unlatching is imitated in conductor field, because the width of the epitaxial layer between the multiple second groove well increases, institute
It can be lowered with the conducting resistance of the metal oxide semiconductor field effect (PCC) power.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, any made by repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (16)
1. a kind of metal oxide semiconductor field effect (PCC) power with three-dimensional superjunction, including：
One the first metal layer；
One basal layer is formed on the first metal layer；
One epitaxial layer is formed on the basal layer；
Multiple first groove wells, are formed among the epitaxial layer；
Multiple base structural layers, wherein the base structural layer for corresponding to each first groove well is formed in each first groove
On well and among the epitaxial layer, and between each first groove well and the epitaxial layer and described matrix structure sheaf
The part of a depletion region is formed between the epitaxial layer；
Multiple polysilicon layers, wherein each polysilicon layer is formed on two adjacent base structural layers and the epitaxial layer, and institute
Each polysilicon layer is stated to be coated by an oxide layer；
One second metal layer is formed on the multiple base structural layer and multiple oxide layers；And
It is characterized in that also including：
Multiple second groove wells, wherein the second groove well for corresponding to each first groove well is formed in described every 1 first
Remaining part of the depletion region is formed under groove well, and between the second groove well and the epitaxial layer；
The wherein described basal layer and the epitaxial layer have one first conduction type, the multiple first groove well and the multiple
Second groove well, which has one second conduction type and the multiple second groove well, is partly led for increasing the metal oxidation
It imitates the breakdown voltage of (PCC) power and reduces the conducting resistance of the metal oxide semiconductor field effect (PCC) power in body field.
2. metal oxide semiconductor field effect (PCC) power as described in claim 1, it is characterised in that：The second groove well and
Described matrix structure sheaf is additionally formed among the epitaxial layer.
3. metal oxide semiconductor field effect (PCC) power as described in claim 1, it is characterised in that：The second groove well
Width is less than the width of each first groove well.
4. metal oxide semiconductor field effect (PCC) power as described in claim 1, it is characterised in that：The second groove well
Ion doping concentration is more than the ion doping concentration of each first groove well.
5. metal oxide semiconductor field effect (PCC) power as described in claim 1, it is characterised in that：Each first groove
Well is by produced by a deep trench back-filling way.
6. metal oxide semiconductor field effect (PCC) power as described in claim 1, it is characterised in that：The ion of the basal layer
Doping concentration is more than the ion doping concentration of the epitaxial layer.
7. metal oxide semiconductor field effect (PCC) power as described in claim 1, it is characterised in that：Described matrix structure sheaf packet
Contain：
One matrix has second conduction type and is formed on each first groove well；
One impure well has second conduction type and is formed among described matrix；
One first doped region has first conduction type and is formed among the impure well and described matrix；And
One second doped region has first conduction type and is formed among the impure well and described matrix；
Wherein the ion doping concentration of described matrix is more than the ion doping concentration of each first groove well, the impure well
Ion doping concentration be more than described matrix ion doping concentration, and work as the metal oxide semiconductor field effect (PCC) power
When unlatching, on one side formation one first passage and second doped region of first doped region relative to second doped region
One second channel of formation on one side relative to first doped region.
8. metal oxide semiconductor field effect (PCC) power as described in claim 1, it is characterised in that：Each first groove
Well and the epitaxial layer are by produced by multilayer epitaxy and ion implantation mode.
9. metal oxide semiconductor field effect (PCC) power as claimed in claim 8, it is characterised in that：Each first groove
The ion doping concentration of well is to gradually increase from top to bottom.
10. metal oxide semiconductor field effect (PCC) power as described in claim 1, it is characterised in that：First conductive state
Sample is N-type, and the described second conductive aspect is p-type.
11. a kind of manufacturing method of the metal oxide semiconductor field effect (PCC) power with three-dimensional superjunction, including：
A basal layer is formed on a first metal layer；
An epitaxial layer is formed on the basal layer, wherein the epitaxial layer has one first conduction type；
It is characterized in that also including：
Multiple second grooves are formed among the epitaxial layer；
It fills the second epitaxy to the multiple second groove with one second conduction type and forms multiple second groove wells；
The epitaxial layer is deposited again；
Multiple first grooves are formed among the epitaxial layer；
It fills the first epitaxy to the multiple first groove with second conduction type and forms multiple first groove wells,
Described in the ion doping concentration of each first groove well in multiple first groove wells be less than in the multiple second groove well
A corresponding second groove well ion doping concentration；
Multiple base structural layers are formed on the multiple first groove well and among the epitaxial layer；And
Multiple polysilicon layers and a second metal layer are formed on the epitaxial layer and the multiple base structural layer；
Between wherein described each first groove well and the epitaxial layer and a matrix knot of corresponding each first groove
The part of a depletion region is formed between structure layer and the epitaxial layer, and between the corresponding second groove well and the epitaxial layer
Remaining part for forming the depletion region, wherein the multiple second groove well is for increasing the metal oxide semiconductor field
It imitates the breakdown voltage of (PCC) power and reduces the conducting resistance of the metal oxide semiconductor field effect (PCC) power.
12. manufacturing method as claimed in claim 11, it is characterised in that：The width of the corresponding second groove well is less than institute
State the width of each first groove well.
13. manufacturing method as claimed in claim 11, it is characterised in that：The ion doping concentration of the basal layer is more than described
The ion doping concentration of epitaxial layer.
14. manufacturing method as claimed in claim 11, it is characterised in that：The first conductive aspect is N-type, and described second
Conductive aspect is p-type.
15. a kind of manufacturing method of the metal oxide semiconductor field effect (PCC) power with three-dimensional superjunction, including：
A basal layer is formed on a first metal layer；
An epitaxial layer is formed on the basal layer, wherein the epitaxial layer has one first conduction type；
It is characterized in that also including：
Multiple second groove wells are formed in the way of an ion implantation among the epitaxial layer；
The rest part of the epitaxial layer and multiple first groove wells are formed in the way of a multilayer epitaxy and ion implantation, wherein
The multiple second groove well and the multiple first groove well have one second conduction type, and each first groove well from
Sub- doping concentration is less than the ion doping concentration of a second groove well of corresponding each first groove；
Multiple base structural layers are formed on the multiple first groove well and among the epitaxial layer；And
Multiple polysilicon layers and a second metal layer are formed on the epitaxial layer and the multiple base structural layer；
Between wherein described each first groove well and the epitaxial layer and a matrix of corresponding each first groove well
The part of a depletion region is formed between structure sheaf and the epitaxial layer, and is formed between the second groove well and the epitaxial layer
Remaining part of the depletion region, wherein the multiple second groove well is for increasing the metal oxide semiconductor field effect work(
The breakdown voltage of rate component and the conducting resistance for reducing the metal oxide semiconductor field effect (PCC) power.
16. manufacturing method as claimed in claim 15, it is characterised in that：The ion doping concentration of each first groove well
It is to gradually increase from top to bottom.
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| US20130087851A1 (en) * | 2011-10-06 | 2013-04-11 | Denso Corporation | Semiconductor device with vertical semiconductor element |
| CN104124276A (en) * | 2014-08-11 | 2014-10-29 | 肖胜安 | Super-junction device and manufacturing method thereof |
| CN104241376A (en) * | 2014-09-01 | 2014-12-24 | 矽力杰半导体技术(杭州)有限公司 | Super junction structure, preparation method of super junction structure and semiconductor device |
| CN206401325U (en) * | 2017-01-20 | 2017-08-11 | 通嘉科技股份有限公司 | Metal oxide semiconductor field effect (PCC) power with three-dimensional superjunction |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130087851A1 (en) * | 2011-10-06 | 2013-04-11 | Denso Corporation | Semiconductor device with vertical semiconductor element |
| CN104124276A (en) * | 2014-08-11 | 2014-10-29 | 肖胜安 | Super-junction device and manufacturing method thereof |
| CN104241376A (en) * | 2014-09-01 | 2014-12-24 | 矽力杰半导体技术(杭州)有限公司 | Super junction structure, preparation method of super junction structure and semiconductor device |
| CN206401325U (en) * | 2017-01-20 | 2017-08-11 | 通嘉科技股份有限公司 | Metal oxide semiconductor field effect (PCC) power with three-dimensional superjunction |
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Application publication date: 20180727 |