CN108321288A - LED light source and its manufacturing method - Google Patents
LED light source and its manufacturing method Download PDFInfo
- Publication number
- CN108321288A CN108321288A CN201810301871.5A CN201810301871A CN108321288A CN 108321288 A CN108321288 A CN 108321288A CN 201810301871 A CN201810301871 A CN 201810301871A CN 108321288 A CN108321288 A CN 108321288A
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- Prior art keywords
- light source
- luminescence unit
- led light
- wavelength selective
- led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Abstract
Present invention is disclosed a kind of LED light source and its manufacturing method, LED light source includes luminescence unit and wavelength selective layers, and luminescence unit includes the packaging body of LED chip and packaging LED chips, and wavelength selective layers are located on the light emitting path of luminescence unit.The LED light source of the present invention can control the wave-length coverage of emergent light, to reduce the wave band light extraction for inhibiting plant growth, reduce inhibiting effect of other band of light to plant growth, and then push the development of plant illumination.
Description
Technical field
The present invention relates to technical field of semiconductor luminescence more particularly to a kind of LED light source and its manufacturing methods.
Background technology
Just one of most important environmental factor of growth and development of plants, is adjusted by light quality, and control plant forms, which are built up, is
One important technology in facility cultivation field.
The sunlight wavelength range for reaching ground is about 300nm~2600nm, and positive work is played to photosynthesis of plant
Effective wavelength range is probably between 400~700nm, wherein the blue light and 610nm~750nm of 420nm~520nm
Feux rouges to photosynthetic contribution rate maximum, the ratio that the light of the green light of 520nm~610nm is absorbed by plants is very low, because
This, not all light both contributes to the photosynthesis of plant.
Moreover, demand of the plant to each wave band of light source in different growth and development processes is also not quite similar, and therefore, LED light
If source can realize single band light extraction, good impetus will be generated to plant illumination.
The different fluorescent powder currently, the LED light source applied to plant growth, usually blue chip are arranged in pairs or groups, luminescent spectrum
Continuously, variegated spectra1 interfer- is inevitably had, especially will appear the spectrum for influencing plant growth, it is inadequate to eventually lead to plant growth
It is ideal.
Invention content
The purpose of the present invention is to provide a kind of LED light source and its manufacturing methods.
One of for achieving the above object, an embodiment of the present invention provides a kind of LED light source, including luminescence unit and
Wavelength selective layers, the luminescence unit include the packaging body of LED chip and the encapsulation LED chip, the wavelength selective layers position
In on the light emitting path of the luminescence unit.
As being further improved for an embodiment of the present invention, the wavelength selective layers are located at the packaging body far from described
The side of LED chip.
As being further improved for an embodiment of the present invention, the wavelength selective layers are DBR layer.
As being further improved for an embodiment of the present invention, shining for the luminescence unit is completely covered in the DBR layer
Face.
As being further improved for an embodiment of the present invention, by the outgoing light wavelength ranging from 420nm of the DBR layer
~520nm or 610nm~750nm.
One of for achieving the above object, an embodiment of the present invention provides a kind of manufacturing method of LED light source, including
Step：
Form a LED chip；
The LED chip is encapsulated using packaging body and forms luminescence unit；
In forming a wavelength selective layers on the light emitting path of the luminescence unit.
As being further improved for an embodiment of the present invention, step " is formed on the light emitting path of the luminescence unit
One wavelength selective layers " specifically include：
A wavelength selective layers are formed in side of the packaging body far from the LED chip.
As being further improved for an embodiment of the present invention, step " is formed on the light emitting path of the luminescence unit
One wavelength selective layers " specifically include：
A wavelength selective layers are coated at the light-emitting surface of the luminescence unit.
As being further improved for an embodiment of the present invention, the wavelength selective layers are DBR layer.
As being further improved for an embodiment of the present invention, by the outgoing light wavelength ranging from 420nm of the DBR layer
~520nm or 610nm~750nm.
Compared with prior art, the beneficial effects of the present invention are：The LED light source of an embodiment of the present invention can control
The wave-length coverage of emergent light reduces suppression of other band of light to plant growth to reduce the wave band light extraction for inhibiting plant growth
It makes and uses, and then push the development of plant illumination.
Description of the drawings
Fig. 1 is the LED light source schematic diagram of an embodiment of the present invention；
Fig. 2 is the manufacturing method block diagram of the LED light source of an embodiment of the present invention.
Specific implementation mode
Below with reference to specific implementation mode shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously
The present invention is not limited, structure that those skilled in the art are made according to these embodiments, method or functionally
Transformation is included within the scope of protection of the present invention.
In each diagram of the present invention, for the ease of illustration, structure or partial certain sizes can be relative to other knots
Structure or part are exaggerated, and therefore, are only used for the basic structure of diagram subject of the present invention.
In addition, the term of the representation space relative position used herein such as "upper", " top ", "lower", " lower section " is
A unit as shown in the drawings or feature are described relative to another unit or feature for the purpose convenient for explanation
Relationship.The term of relative space position can be intended to include equipment in use or work other than orientation as shown in the figure not
Same orientation.For example, if the equipment in figure overturn, it is described as being located at other units or feature " below " or " under "
Unit will be located at other units or feature " top ".Therefore, exemplary term " lower section " can include above and below both
Orientation.Equipment can otherwise be directed (be rotated by 90 ° or other directions), and be interpreted accordingly it is used herein with it is empty
Between relevant description.
Join shown in Fig. 1, one embodiment of the present invention discloses a kind of LED light source 100.
LED light source 100 includes luminescence unit 10 and wavelength selective layers 20.
Luminescence unit 10 includes LED chip 11, the packaging body 12 of packaging LED chips 11, pedestal 13 and reflector 14.
Here, LED chip 11 can be conventional LED chips, for example, LED chip 11 includes substrate, LED successively from bottom to top
Epitaxial structure, current barrier layer, transparency conducting layer, passivation layer, P electrode and N electrode.
Pedestal 13 can be made of heat sink material, and pedestal 13 has mounting surface 131.
LED chip 11 and reflector 14 are set on the mounting surface 131 of pedestal 13.
It is fixed to each other by crystal-bonding adhesive between LED chip 11 and the mounting surface 131 of pedestal 13, and LED chip 11 passes through gold
Line 15 is realized with pedestal 13 and is electrically connected.
Reflector 14 is arranged around LED chip 11 and gold thread 15, and reflector 14 can be integrally formed with pedestal 13, alternatively, instead
It is assemblied together after penetrating 13 each self-forming of cup 14 and pedestal.
Reflector 14 is annular in shape comprising a horizontal top surface 141, from 141 inner end of top surface towards the mounting surface of pedestal 13
131 downwards, slope inwardly inner wall 142 made of extending, and the lateral wall 143 of reflector 14 is from the outer end of top surface 141 towards pedestal
13 mounting surfaces 131 extend.
Here, from the top surface of the light that LED chip 11 generates self-reflection cup 14 after the inner wall 142 of reflector 14 reflects
141 top is emitted, and reflecting layer (not indicating) or coarse structure made of a floor height reflective materials can be arranged on inner wall 142
(not indicating), to further improve the reflection efficiency of reflector 14.
Packaging body 12 can be packaging plastic, can be made of clear material, and be filled in reflector 14 and coat LED chip
11, gold thread 15.
The top of packaging body 12 can be coplanar with the top surface 141 of reflector 14, and packaging body 12 is used to prevent external steam, ash
The particles such as dirt contact with LED chip 11 and influence its characteristics of luminescence.
Wavelength selective layers 20 are located on the light emitting path of luminescence unit 10.
That is, the light that luminescence unit 10 is sent out is emitted again after wavelength selective layers 20.
In the present embodiment, wavelength selective layers 20 are located at side of the packaging body 12 far from LED chip 11, i.e. wavelength selection
Layer 20 is located at the upper surface of packaging body 12.
Such setting is advantageous in that：On the one hand, wavelength selective layers 20 are located at the outside of entire luminescence unit 10, are formed
Journey is simple and convenient；On the other hand, the setting of wavelength selective layers 20 does not interfere with the normal light extraction of luminescence unit 10, for example, not
It can influence the transmission performance of gold thread 15.
In the present embodiment, the light-emitting surface of luminescence unit 10 is completely covered in wavelength selective layers 20.
It should be noted that " light-emitting surface " here refers to the practical one side being emitted of emergent light of entire luminescence unit 10,
That is the upper surface of wavelength selective layers 20.
In the present embodiment, wavelength selective layers 20 are that (distributed Bragg reflection divide DBR layer 20
Cloth Bragg reflecting layer).
DBR layer 20 is alternately arranged the periodic structure formed by the material of two kinds of different refractivities in the way of n* (A+B)
Film, wherein A/B is the material of two kinds of different refractivities, for example, A/B is SiO2/TiO2 or SiO2/MgO or other combinations,
N is alternately arranged periodicity.
The 1/4 of reflection wavelength centered on optical thickness per layer material, controls the experiment of different pairs, obtains centre wavelength
With bandwidth close to the DBR layer 20 of calculated value, energy gap position can be adjusted through the refractive index or thickness that change material, from
And obtain the DBR layer 20 of required wavelength.
In the present embodiment, by outgoing light wavelength ranging from 420nm~520nm or 610nm of DBR layer 20~
750nm。
Here, the LED light source for field being cultivated applied to plant should show following characteristics：(1) type of wavelength just with plant
Object light synthesizes and the spectral region of photomorphogenesis is coincide, while half width of spectral wave width, and it is pure can to combine acquisition as required
Positive monochromatic light and complex spectrum can concentrate the light of specific wavelength balancedly irradiate crop；(2) crop flowers can not only be adjusted
With it is solid, and plant height and plant nutrient composition can also be controlled；(3) system heat generation is few, occupies little space, and can be used for multilayer cultivation
The three-dimensional combined system of training, realizes low heat loads and smaller production space for production space；(4) durability is strong, to reduce operating cost.
Influence of the spectral region to plant physiology is as follows：
The ultraviolet light of 280nm~315nm, the influence to phytomorph and physiology course are minimum；
The ultraviolet light of 315nm~420nm, Chlorophyll absorption is few, influences photoinductive cycles, and stem is prevented to extend；
The blue light of 420nm~520nm, chlorophyll is maximum with carotenoid assimilation ratio, is influenced on photosynthesis maximum；
The absorptivity of the green light of 520nm~610nm, pigment is not high；
The feux rouges of 610nm~750nm, Chlorophyll absorption rate "high", has a significant impact photosynthesis and photoinductive cycles；
The feux rouges of 750nm~1000nm, absorptivity is low, stimulates cell elongation, influence is bloomed and germination.
LED light source 100 in present embodiment can control the wave-length coverage of emergent light so that LED light source 100 shines
Face can only penetrate the photon of specific wavelength, and the photon of other wavelength can be reflected back by DBR layer 20 inside packaging body 12.
Here, by outgoing light wavelength ranging from 420nm~520nm or 610nm~750nm of DBR layer 20, the wavelength model
The blue light and feux rouges enclosed is to photosynthetic contribution rate maximum, and therefore, the LED light source 100 of present embodiment can reduce inhibition
The wave band light extraction of plant growth reduces inhibiting effect of other band of light to plant growth, and then pushes the development of plant illumination.
It should be noted that in order to reduce the purity of technology difficulty and emergent light, the emergent light of LED light source 100 can be only
Including a kind of wave-length coverage, i.e., LED light source 100 is single band LED light source at this time, for example, the outgoing light wavelength of LED light source 100
Ranging from 420nm~520nm.
In addition, in order to adapt to the various different stages of growth of plant or adapt to different types of plant, tool can be provided
There is the plurality of LED light sources 100 of different wavelength range, and selectively chooses suitable LED light source 100 according to demand.
An embodiment of the present invention also provides a kind of manufacturing method of LED light source 100, in conjunction with saying for above-mentioned LED light source 100
Bright and Fig. 2, manufacturing method include step：
Form a LED chip 11；
Luminescence unit 10 is formed using 12 packaging LED chips 11 of packaging body；
In forming a wavelength selective layers 20 on the light emitting path of luminescence unit 10.
Wherein, step specifically includes " in forming a wavelength selective layers 20 on the light emitting path of luminescence unit 10 "：
A wavelength selective layers 20 are formed in side of the packaging body 12 far from LED chip 11.
Further, step specifically includes " in forming a wavelength selective layers 20 on the light emitting path of luminescence unit 10 "：
A wavelength selective layers 20 are coated at the light-emitting surface of luminescence unit 10.
In the present embodiment, wavelength selective layers 20 are DBR layer 20, and ranging from by the outgoing light wavelength of DBR layer 20
420nm~520nm or 610nm~750nm.
LED light source 100 in present embodiment can control the wave-length coverage of emergent light so that LED light source 100 shines
Face can only penetrate the photon of specific wavelength, and the photon of other wavelength can be reflected back by DBR layer 20 inside packaging body 12.
Here, by outgoing light wavelength ranging from 420nm~520nm or 610nm~750nm of DBR layer 20, the wavelength model
The blue light and feux rouges enclosed is to photosynthetic contribution rate maximum, and therefore, the LED light source 100 of present embodiment can reduce inhibition
The wave band light extraction of plant growth reduces inhibiting effect of other band of light to plant growth, and then pushes the development of plant illumination.
Other explanations of the manufacturing method of the LED light source 100 of present embodiment can refer to saying for above-mentioned LED light source 100
Bright, details are not described herein.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can for bright book
With the other embodiment of understanding.
The series of detailed descriptions listed above only for the present invention feasible embodiment specifically
Bright, they are all without departing from equivalent implementations made by technical spirit of the present invention not to limit the scope of the invention
Or change should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of LED light source, which is characterized in that including luminescence unit and wavelength selective layers, the luminescence unit includes LED chip
And the packaging body of the encapsulation LED chip, the wavelength selective layers are located on the light emitting path of the luminescence unit.
2. LED light source according to claim 1, which is characterized in that it is separate that the wavelength selective layers are located at the packaging body
The side of the LED chip.
3. LED light source according to claim 1 or 2, which is characterized in that the wavelength selective layers are DBR layer.
4. LED light source according to claim 3, which is characterized in that the hair of the luminescence unit is completely covered in the DBR layer
Smooth surface.
5. LED light source according to claim 3, which is characterized in that pass through the outgoing light wavelength of the DBR layer ranging from
420nm~520nm or 610nm~750nm.
6. a kind of manufacturing method of LED light source, which is characterized in that including step：
Form a LED chip；
The LED chip is encapsulated using packaging body and forms luminescence unit；
In forming a wavelength selective layers on the light emitting path of the luminescence unit.
7. the manufacturing method of LED light source according to claim 6, which is characterized in that step is " in the hair of the luminescence unit
A wavelength selective layers are formed on light path " it specifically includes：
A wavelength selective layers are formed in side of the packaging body far from the LED chip.
8. the manufacturing method of LED light source according to claim 6, which is characterized in that step is " in the hair of the luminescence unit
A wavelength selective layers are formed on light path " it specifically includes：
A wavelength selective layers are coated at the light-emitting surface of the luminescence unit.
9. the manufacturing method of the LED light source according to any one of claim 6 to 8, which is characterized in that the wavelength choosing
It is DBR layer to select layer.
10. the manufacturing method of LED light source according to claim 9, which is characterized in that by the emergent light of the DBR layer
Wave-length coverage is 420nm~520nm or 610nm~750nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810301871.5A CN108321288A (en) | 2018-04-04 | 2018-04-04 | LED light source and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810301871.5A CN108321288A (en) | 2018-04-04 | 2018-04-04 | LED light source and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108321288A true CN108321288A (en) | 2018-07-24 |
Family
ID=62896202
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810301871.5A Withdrawn CN108321288A (en) | 2018-04-04 | 2018-04-04 | LED light source and its manufacturing method |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807653A (en) * | 2010-02-04 | 2010-08-18 | 苏州纳科显示技术有限公司 | Polarized light-emitting diode packaging structure and light-emitting method thereof |
| EP2644020A1 (en) * | 2010-11-25 | 2013-10-02 | Sharp Kabushiki Kaisha | Light emitting device, led light source for plant cultivation, and plant factory |
| KR20140113850A (en) * | 2013-03-15 | 2014-09-25 | 삼성전자주식회사 | Semiconductor light emitting device package |
| CN104633493A (en) * | 2013-11-14 | 2015-05-20 | 晶元光电股份有限公司 | light emitting device |
| US20180019384A1 (en) * | 2016-07-13 | 2018-01-18 | Nichia Corporation | Light emitting device and method of manufacturing the same, and display device |
| CN207977345U (en) * | 2018-04-04 | 2018-10-16 | 聚灿光电科技（宿迁）有限公司 | Led light source |
-
2018
- 2018-04-04 CN CN201810301871.5A patent/CN108321288A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807653A (en) * | 2010-02-04 | 2010-08-18 | 苏州纳科显示技术有限公司 | Polarized light-emitting diode packaging structure and light-emitting method thereof |
| EP2644020A1 (en) * | 2010-11-25 | 2013-10-02 | Sharp Kabushiki Kaisha | Light emitting device, led light source for plant cultivation, and plant factory |
| KR20140113850A (en) * | 2013-03-15 | 2014-09-25 | 삼성전자주식회사 | Semiconductor light emitting device package |
| CN104633493A (en) * | 2013-11-14 | 2015-05-20 | 晶元光电股份有限公司 | light emitting device |
| US20180019384A1 (en) * | 2016-07-13 | 2018-01-18 | Nichia Corporation | Light emitting device and method of manufacturing the same, and display device |
| CN207977345U (en) * | 2018-04-04 | 2018-10-16 | 聚灿光电科技（宿迁）有限公司 | Led light source |
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Application publication date: 20180724 |